JP4678262B2 - Method for manufacturing silicon device and method for manufacturing liquid jet head - Google Patents

Description

  The present invention relates to a method for manufacturing a silicon device used as a part of an ink jet recording apparatus or the like and a method for manufacturing a liquid jet head.

  Conventionally, a liquid ejecting head that ejects liquid droplets from a nozzle by applying pressure to the liquid by a piezoelectric element or a heat generating element is known, and a typical example thereof is ink jet recording that ejects ink droplets. Head. In addition, in such an ink jet recording head, for example, a sealing substrate having a piezoelectric element holding portion capable of sealing the space in a state where a space that does not hinder the movement of the piezoelectric element is secured, and the sealing substrate There is a structure composed of a driving IC for driving a piezoelectric element provided on the top and wiring for connecting a lead electrode (see, for example, Patent Document 1).

  The ink jet recording head having the above-described structure actually bonds a sealing substrate wafer having a plurality of sealing substrates and a flow path forming substrate wafer having a plurality of flow path forming substrates. Then, a plurality of them are assembled at the same time, and a plurality of them are manufactured at a time by dividing them into one chip size.

  A wafer for a sealing substrate used as a component of such an ink jet recording head forms a metal layer on one surface thereof, and this metal layer is patterned by etching, whereby each drive on each sealing substrate is driven. Each wiring is formed in a region where the IC is mounted. Further, such a sealing substrate wafer is provided with a narrow groove or the like so that it can be easily divided into one chip at the time of manufacturing the ink jet recording head. For this reason, when forming a wiring by patterning a metal layer in a process of manufacturing a sealing substrate wafer, the metal layer in the narrow groove may not be completely removed and may remain.

  If such a metal layer residual foreign matter exists, for example, a silicon substrate provided with wiring is subjected to a process such as ethanol cleaning, primer treatment, and immersion in a chemical layer of isopropyl alcohol. Residual foreign matter in the inside may be removed and reattached to the wiring surface and the like, and there may be a failure such as a short circuit between adjacent wirings. For this reason, it is preferable to completely remove the metal layer in the narrow groove, but it is difficult to completely remove the metal layer in the narrow groove when the metal layer is etched to form a wiring. Conventionally, in the manufacturing process of an ink jet recording head or the like, even if an attempt was made to remove foreign matter, it could not be removed sufficiently.

JP 2005-053080 A (Claims etc.)

  In view of such circumstances, it is an object of the present invention to provide a method for manufacturing a silicon device and a method for manufacturing a liquid jet head in which foreign matters in a narrow groove are completely removed.

According to a first aspect of the present invention for solving the above-described problems, a metal layer formed on a silicon substrate having at least a narrow groove opened on the surface is etched using a first etching solution, and wiring is formed on the silicon substrate. And at least removing the metal layer adhering to the inside of the narrow groove by etching using a second etching solution in which alcohol is added to a concentration of 5 to 15%. A method for manufacturing a silicon device.
In the first aspect, the metal layer foreign matter that cannot be completely removed when the wiring is formed by performing etching using the second etching solution to which the alcohol is added so that the alcohol concentration becomes 5 to 15%. The silicon device is removed.

According to a second aspect of the present invention, in the first aspect, the second etching solution is obtained by adding alcohol to the first etching solution so as to have a concentration of 5 to 15%. And a method for manufacturing a silicon device.
In the second aspect, it is possible to remove foreign substances on the metal layer that cannot be completely removed when forming the wiring by simply adding the alcohol to the first etching solution so that the concentration becomes 5 to 15% and etching. The silicon device from which foreign matter has been removed is obtained.

According to a third aspect of the present invention, there is provided the method for manufacturing a silicon device according to the first or second aspect, wherein the metal layer is gold (Au).
In the third aspect, by etching with the second etching solution to which the alcohol is added to a concentration of 5 to 15%, gold (Au) that is a foreign matter is removed particularly effectively, and the foreign matter is removed. It becomes a silicon device.

According to a fourth aspect of the present invention, there is provided the method for manufacturing a silicon device according to any one of the first to third aspects, wherein the second etching solution contains potassium iodide.
In the fourth aspect, foreign substances made of gold (Au) are more effectively removed by etching with an etching solution containing potassium iodide and added with alcohol so that the alcohol concentration is 5 to 15%. Thus, the silicon device from which foreign matter has been removed is obtained.

According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the step of removing the foreign matter includes immersing the silicon substrate in the bubbled second etching solution. The method is for manufacturing a silicon device.
In the fifth aspect, since the second etching solution is bubbled, the second etching solution penetrates into details such as the fine grooves of the silicon substrate and can effectively perform the etching, so that the foreign matter is removed. The removed silicon device is obtained.

According to a sixth aspect of the present invention, in any one of the first to fifth aspects, in the step of removing the foreign matter, the silicon substrate is immersed in the second etching solution, and the silicon substrate is vibrated. A method of manufacturing a silicon device is provided.
In the sixth aspect, the silicon substrate is immersed in the second etching solution and vibrated, so that the second etching solution penetrates into details such as the fine grooves of the silicon substrate, and the etching is effectively performed. Therefore, the silicon device from which foreign matters are removed is obtained.

A seventh aspect of the present invention is the silicon device according to any one of the first to sixth aspects, wherein the step of removing the foreign matter is performed in a state where the surface of the wiring is protected by a protective film. In the manufacturing method.
In the seventh aspect, since the wiring that does not need to be etched is protected by the protective film, only the necessary portion can be effectively etched, and the formed wiring is not likely to be excessively etched. Become a device.

An eighth aspect of the present invention is the method for producing a silicon device according to the seventh aspect, wherein the protective film is a thermal peeling tape.
In the eighth aspect, since the wiring that does not need to be etched is protected by the thermal peeling tape, only the necessary part can be effectively etched, and the thermal peeling tape can be easily obtained by applying heat after the etching. The silicon device can be peeled off, and there is no fear of peeling of the formed wiring or excessive etching.

According to a ninth aspect of the present invention, at least a flow path forming substrate wafer having a plurality of flow path forming substrates having piezoelectric elements and a protective substrate wafer having a plurality of protective substrates protecting piezoelectric elements are joined, In a method of manufacturing a liquid jet head that is a liquid jet head that divides this into a liquid jet head that discharges liquid from a nozzle opening, a first metal layer formed on the protective substrate wafer having at least a narrow groove opened on a surface is provided. Etching with an etching solution to form a wiring on the protective substrate wafer, and using a second etching solution to which alcohol is added to a concentration of 5 to 15%, adheres at least to the narrow groove And a step of removing the foreign matter from the metal layer by etching.
In the ninth aspect, the metal layer foreign matter that cannot be completely removed when the wiring is formed by performing the etching using the second etching solution to which the alcohol is added so that the alcohol concentration becomes 5 to 15%. Thus, the liquid ejecting head having the protective substrate wafer from which is removed.

Hereinafter, details of the present invention will be described based on embodiments.
FIG. 1 is an exploded perspective view showing an outline of a liquid jet head according to an embodiment of the present invention, and FIG. 2 is a plan view and a cross-sectional view taken along line AA ′ of FIG.

In this embodiment, the flow path forming substrate 10 is made of a silicon single crystal substrate having a plane orientation (110), and an elastic film 50 having a thickness of 0.5 to ₂ μm made of silicon dioxide (SiO ₂ ) is formed on one surface thereof. Has been. In the present embodiment, the elastic film 50 is an amorphous film made of silicon oxide formed by thermally oxidizing the flow path forming substrate 10 that is a silicon single crystal substrate. It has a smooth surface state in which the surface state of 10 is maintained as it is.

  In the flow path forming substrate 10, pressure generation chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction by anisotropically etching a silicon single crystal substrate from one surface side thereof. In addition, a communication portion 13 that is in communication with a reservoir portion 32 of a protective substrate 30 described later is formed outside the pressure generation chamber 12 in the longitudinal direction. The communication portion 13 is in communication with each other at one end in the longitudinal direction of each pressure generating chamber 12 via an ink supply path 14. The communication part 13 constitutes a part of a reservoir that communicates with a reservoir part of a protective substrate, which will be described later, and serves as a common ink chamber for the pressure generating chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and keeps the flow path resistance of the ink flowing into the pressure generation chamber 12 from the communication portion 13 constant. Further, a nozzle plate 20 having a nozzle opening 21 communicating with the side opposite to the ink supply path 14 of each pressure generating chamber 12 on the opening surface side of the flow path forming substrate 10 is an adhesive, a heat-welded film, or the like. It is fixed through.

  A buffer layer 55, a lower electrode 60, a piezoelectric layer 70, and an upper electrode 80 are sequentially formed on the elastic film 50 on the side opposite to the opening surface of the flow path forming substrate 10.

  Here, the piezoelectric element 300 includes a portion including the lower electrode 60, the piezoelectric layer 70, and the upper electrode 80. The piezoelectric element 300 is formed of a lower electrode 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1 μm, and an upper electrode 80 having a thickness of, for example, about 0.05 μm. Has been. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode 60 is a common electrode of the piezoelectric element 300, and the upper electrode 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator.

  A protective substrate 30 having a piezoelectric element holding portion 31 that secures a space that does not hinder the movement of the piezoelectric element 300 is bonded onto the flow path forming substrate 10 on the side where the piezoelectric element 300 is provided. The element 300 is formed in the piezoelectric element holding portion 31. Further, the protective substrate 30 is provided with a reservoir portion 32 that constitutes at least a part of the reservoir 90 common to the pressure generating chambers 12, and the reservoir portion 32 is connected to the flow path forming substrate 10 as described above. 13 constitutes a reservoir 90.

  Further, a connection hole 33 that penetrates the protective substrate 30 in the thickness direction is provided between the piezoelectric element holding portion 31 and the reservoir portion 32 of the protective substrate 30, and the lead drawn from each piezoelectric element 300 is provided. The tip of the electrode 85 is exposed in the connection hole 33. Further, a connection wiring 35 made of, for example, a gold (Au) metal layer is formed on the surface of the protective substrate 30 opposite to the piezoelectric element holding portion 31 side, for example, via an insulating film made of silicon dioxide (not shown). A drive IC 34 for driving the piezoelectric element 300 is mounted on the connection wiring 35. Each lead electrode 85 and the drive IC 34 are connected by a connection wiring 35 extending in the connection hole 33.

  On the protective substrate 30, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded. Here, the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). An opening 43 that is completely removed in the thickness direction is formed in a region facing the reservoir 90 of the fixing plate 42, and one surface of the reservoir 90 is sealed only with a flexible sealing film 41. ing.

  Such a liquid jet head takes in a liquid from an external liquid supply means (not shown), fills the interior from the reservoir 90 to the nozzle opening 21 with the liquid, and then follows the recording signal from a drive circuit (not shown) to generate the pressure generating chamber 12. By applying a voltage between the lower electrode 60 and the upper electrode 80 corresponding to each of the above, the elastic film 50, the buffer layer 55, the lower electrode 60, and the piezoelectric layer 70 are bent and deformed. The pressure increases and droplets are ejected from the nozzle openings 21.

  Here, a method for manufacturing an ink jet recording head according to an embodiment of the present invention will be described with reference to FIGS. 3 to 6 are sectional views in the longitudinal direction of the pressure generating chamber. First, as shown in FIG. 3A, a channel forming substrate wafer 110 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 51 constituting an elastic film 50 is formed on the surface thereof. To do. As described above, the silicon dioxide film 51 is an amorphous film. In this embodiment, a silicon wafer having a relatively thick film thickness of about 625 μm and a high rigidity is used as the flow path forming substrate wafer 110.

Next, as shown in FIG. 3B, a buffer layer 55 is formed on the elastic film 50. In the present embodiment, a zirconium (Zr) layer is formed on the entire surface of the flow path forming substrate wafer 110 by sputtering, and the zirconium layer is then oxidized by thermal oxidation in a diffusion furnace at about 500 to 1200 ° C., for example. A buffer layer 55 made of zirconium (ZrO ₂ ) is formed. Although the thickness of the buffer layer 55 is not particularly limited, in the present embodiment, the buffer layer 55 is adjusted to about 20 to 500 nm in accordance with the rigidity of the diaphragm.

  Next, the lower electrode 60 is formed on the buffer layer 55 as shown in FIG. In the present embodiment, a platinum (Pt) layer 61 is formed on the entire surface of the flow path forming substrate wafer 110 by sputtering, and then the lower electrode 60 is formed by patterning the platinum (Pt) layer 61 into a predetermined shape. Formed.

  Next, as shown in FIG. 4A, a piezoelectric layer 70 made of lead zirconate titanate (PZT) is formed on the lower electrode 60. In the present embodiment, a so-called sol-gel method is used in which a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied and dried to be gelled, and further fired at a high temperature to obtain a piezoelectric layer 70 made of metal oxide. Thus, the piezoelectric layer 70 was formed. Here, the piezoelectric layer 70 is crystallized under the restraint of the lower electrode 60. In this embodiment, the piezoelectric layer 70 is formed by the sol-gel method. However, the method for forming the piezoelectric layer 70 is not particularly limited. For example, the sputtering method, the MOCVD method (organic metal) Vapor phase growth method) or MOD method may be used.

  After forming the piezoelectric layer 70 in this way, as shown in FIG. 4B, for example, an upper electrode 80 made of iridium is formed on the entire surface of the flow path forming substrate wafer 110. Next, as shown in FIG. 4C, the piezoelectric layer 300 is formed by patterning the piezoelectric layer 70 and the upper electrode 80 in regions facing the respective pressure generation chambers.

  Next, as shown in FIG. 5A, a metal layer 86 made of, for example, gold (Au) or the like is formed over the entire surface of the flow path forming substrate wafer 110, and then the metal layer 86 is formed into a piezoelectric element. The lead electrode 85 is formed by patterning every 300.

  Next, as shown in FIG. 5B, on the piezoelectric element 300 side of the flow path forming substrate wafer 110, for example, a protective substrate wafer comprising a silicon wafer having a thickness of about 400 nm and forming a plurality of protective substrates 30. 130 is joined. This protective substrate wafer 130 was manufactured by the method described below. 7 and 8 are cross-sectional views in the longitudinal direction of the protective substrate wafer.

  First, as shown in FIG. 7A, the protective substrate wafer 130 is anisotropically etched to form the piezoelectric element holding portion 31, the reservoir portion 32, and the connection hole 33 in the protective substrate wafer 130. Further, in order to make it easier to cut the protective substrate wafer 130 in a later step, the narrow groove 5 is formed in the protective substrate wafer 130. The narrow groove 5 is continuously extended to the end portion of the protective substrate wafer 130 and is open to the end face (side surface) of the protective substrate wafer 130.

  Next, as shown in FIG. 7B, a metal layer 36 made of gold (Au) is formed on one surface of the protective substrate wafer 130 by sputtering. At this time, gold (Au) is also applied to a portion corresponding to the narrow groove 5 formed in the protective substrate wafer 130.

  As shown in FIG. 7C, the metal layer 36 made of gold (Au) is patterned into a predetermined shape by etching using a first etching solution made of potassium iodide, and is opposed to the piezoelectric element holding portion 31. The connection wiring 35 is formed in the region to be processed. The first etching solution is not limited to an etching solution made of potassium iodide, but may be any material that can satisfactorily etch the metal layer 36 made of gold (Au). The connection wiring 35 is not particularly limited to gold (Au), and may be a metal having conductivity.

  Next, as shown in FIG. 8A, the connection wiring 35 is protected with a thermal peeling tape 38. Specifically, the thermal peeling tape 38 is affixed only to the periphery of the wiring region where the connection wiring 35 corresponding to each protection substrate 30 of the protection substrate wafer 130 is provided. As a result, the connection wiring 35 of the protective substrate wafer 130 is covered with the thermal peeling tape 38, and it is possible to protect the connection wiring 35 from being etched in a foreign matter removal etching process described later. In the present embodiment, the connection wiring 35 is protected by using the thermal peeling tape 38. However, what protects the connection wiring 35 is not affected by etching, and there is no possibility that the connection wiring 35 is peeled off. If it is, it will not specifically limit. If there is a portion other than the connection wiring 35 that does not need to be etched, it may be protected in the same manner.

  As shown in FIG. 8B, the second etching solution is introduced into the etching tank 1000 filled with the second etching solution 100 to which the alcohol is added at a concentration of 5 to 15% from the opening of the connection hole 33. Etching is performed by immersing the protective substrate wafer 130 so that 100 does not enter. In this embodiment, the protective substrate wafer 130 is etched for 3 minutes at room temperature using the second etching solution 100 described above. Note that the etching performed here is different from the etching for general patterning, and removes the foreign matters remaining at the pattern ends generated when the connection wiring 35 is patterned and the foreign matters attached to unnecessary portions. It is close to cleaning.

  Here, the second etching solution 100 is obtained by adding alcohol to potassium iodide so as to have a concentration of 5 to 15%. Since the second etching solution 100 is added so that the alcohol has a concentration of 5 to 15%, the etching solution can easily penetrate into the details of the protective substrate wafer 130 such as the narrow groove 5, and the etching residue can be removed. Etching can be performed without generating. By performing etching using the second etching solution 100 to which alcohol is added to a concentration of 5 to 15%, foreign matter made of gold (Au) adhering to the inside of the narrow groove 5 of the protective substrate wafer 130 is removed. It can be effectively removed. The reason why the concentration of alcohol in the etching solution is defined as 5 to 15% is that if the alcohol concentration in the etching solution is less than 5%, the penetration into the fine groove 5 of the protective substrate wafer 130 and the like This is because if the alcohol concentration is higher than 15%, the etching ability of the etching solution may be lowered. That is, by defining the amount of alcohol in the etching solution as a concentration of 5 to 15%, the etching solution has high permeability to details such as the inside of the narrow groove 5 of the protective substrate wafer 130 and has sufficient etching ability. It will be retained.

  The etching solution 100 is an etching solution in which alcohol is added to potassium iodide. However, in order to remove foreign substances from the metal layer, the etching solution is an etching solution in which alcohol is added to a concentration of 5 to 15%. There is no limitation to potassium iodide. In the case where the metal layer is gold (Au), it is particularly preferable to use an etching solution containing potassium iodide.

  Further, the second etching solution 100 may be bubbled, and when the second etching solution 100 is bubbled, the etching solution 100 penetrates into the details of the protective substrate wafer 130 such as the narrow groove 5. The protective substrate wafer 130 can be etched without generating an etching residue. Further, the protective substrate wafer 130 may be vibrated using an ultrasonic device or the like, and when it is vibrated, the second effective substrate wafer 130 such as the narrow groove 5 is effectively removed. Thus, the protective substrate wafer 130 can be etched without generating an etching residue. That is, when etching is performed by bubbling the etchant and vibrating the protective substrate wafer 130, the etchant can be more effectively permeated, and foreign matters on the protective substrate wafer 130 can be completely removed. it can.

  In addition, the temperature of the second etching solution 100 is not particularly limited, but when using a thermal peeling tape, it is preferable that the second etching liquid 100 be used at an extent that the thermal peeling tape does not peel, that is, 140 ° C. or less.

  Next, as shown in FIG. 8C, the protective substrate wafer 130 is taken out from the second etching solution 100 and heated at 140 ° C. or higher to remove the thermal peeling tape 38 that has protected the connection wiring 35. Remove. The thermal peeling tape 38 can be easily peeled off by applying heat, and there is no possibility of peeling the material of the connection wiring 35.

  As described above, the silicon device manufacturing method of the present invention in which the second etching solution is used after the wiring patterning is performed, so that the connection wiring 35 cannot be completely removed during the patterning. Foreign matters adhering to the narrow grooves 5 and the surface of the protective substrate wafer 130 can be completely removed.

  After that, although not shown in particular, in order to join with the flow path forming substrate wafer 110, the protective substrate wafer 130 is washed with ethanol and subjected to a primer treatment and immersed in a chemical layer of isopropyl alcohol. At this time, since the foreign substance adhering to the narrow groove 5 or the like is removed from the protective substrate wafer 130, the foreign substance is removed in the above-described process and reattached to the wiring provided on the protective substrate wafer 130. There is no fear of that. That is, there is no possibility that a foreign substance in the metal layer reattaches to the wiring and a short circuit or the like occurs.

  Hereinafter, a method for manufacturing an ink jet recording head after the protective substrate wafer 130 is processed and bonded to the flow path forming substrate wafer 110 will be described.

  Next, as shown in FIG. 5C, after the flow path forming substrate wafer 110 is polished to a certain thickness, the flow path forming substrate wafer 110 is further etched to a predetermined thickness by wet etching with hydrofluoric acid. To.

  Next, as shown in FIG. 6A, a mask film 52 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, the flow path forming substrate wafer 110 is anisotropically etched through the mask film 52, whereby, as shown in FIG. 13 and the ink supply path 14 are formed.

  After that, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the protective substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. Then, the flow path forming substrate wafer 110 or the like is divided into a single chip size flow path forming substrate 10 or the like as shown in FIG.

  In the method of manufacturing a liquid jet head according to the invention, the metal layer 36 formed on the protective substrate wafer 130 having at least the narrow groove 5 opened on the surface is etched using the first etching solution, and the protective substrate wafer is etched. Using the step of forming wiring on 130 and the second etching solution 100 to which alcohol is added to a concentration of 5 to 15%, at least the foreign matter on the metal layer 36 adhering to the narrow groove 5 is etched. Removing. By providing the above-described steps, the protective substrate wafer 130 adheres to the details such as the inside of the narrow groove 5 of the protective substrate wafer 130 in the steps such as ethanol cleaning of the protective substrate wafer 130, primer treatment, and immersion in isopropyl alcohol. There is no possibility that the foreign matter on the metal layer 36 is removed and reattached to the wiring formed on the protective substrate wafer 130. As a result, it is possible to prevent a foreign matter from the metal layer 36 from reattaching to the wiring and causing a short circuit or the like.

  According to the method for manufacturing an ejection head of the present invention, since the foreign matter on the protective substrate wafer is completely removed, the liquid ejection head can be produced without reducing the yield of the product.

  Further, such a liquid ejecting head according to the present invention constitutes a part of a recording head unit including an ink flow path communicating with an ink cartridge or the like, and is mounted on the liquid ejecting apparatus.

  In the above-described embodiment, the ink jet recording head is illustrated as an example of the liquid ejecting head. However, the present invention is widely intended for the entire liquid ejecting head, and ejects liquid other than ink. Of course, it can be applied. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  In the present embodiment, the present invention has been described by taking an ink jet recording head as an example. However, the present invention is of course not limited to this, and the present invention is also applicable to the manufacture of a silicon device having a thin film pattern on a silicon substrate such as a semiconductor. be able to.

FIG. 3 is an exploded perspective view of a liquid ejecting head according to an embodiment of the invention. 2A and 2B are a plan view and a cross-sectional view of a liquid jet head according to an embodiment of the invention. It is sectional drawing of the longitudinal direction of the pressure generation chamber which concerns on one Embodiment of this invention. It is sectional drawing of the longitudinal direction of the pressure generation chamber which concerns on one Embodiment of this invention. It is sectional drawing of the longitudinal direction of the pressure generation chamber which concerns on one Embodiment of this invention. It is sectional drawing of the longitudinal direction of the pressure generation chamber which concerns on one Embodiment of this invention. It is sectional drawing of the longitudinal direction of the wafer for protective substrates which concerns on one Embodiment of this invention. It is sectional drawing of the longitudinal direction of the wafer for protective substrates which concerns on one Embodiment of this invention.

Explanation of symbols

5 narrow groove, 10 flow path forming substrate, 11 partition wall, 12 pressure generating chamber, 13 communicating portion, 20 nozzle plate, 21 nozzle opening, 30 protective substrate, 31 piezoelectric element holding portion, 32 reservoir portion, 33 connection hole, 35 connection Wiring, 50 elastic film, 55 buffer layer, 60 lower electrode, 70 piezoelectric layer, 80 upper electrode, 85 lead electrode, 90 reservoir, 100 etching solution, 300 piezoelectric element, 1000 etching tank

Claims (9)

Etching a metal layer formed on a silicon substrate having at least a narrow groove on the surface with a first etching solution to form a wiring on the silicon substrate; and an alcohol concentration of 5 to 15% And a step of removing at least the foreign matter of the metal layer adhering to the inside of the narrow groove by etching using a second etching solution added so as to become a silicon device. Production method. 2. The method of manufacturing a silicon device according to claim 1, wherein the second etching solution is obtained by adding alcohol to the first etching solution so that the concentration thereof is 5 to 15%. 3. The method of manufacturing a silicon device according to claim 1, wherein the metal layer is gold (Au). 4. The method of manufacturing a silicon device according to claim 1, wherein the second etching solution contains potassium iodide. 5. The method of manufacturing a silicon device according to claim 1, wherein the step of removing the foreign matter includes immersing the silicon substrate in the bubbled second etching solution. 6. The silicon device according to claim 1, wherein the step of removing the foreign matter is performed while the silicon substrate is immersed in the second etching solution and the silicon substrate is vibrated. Production method. 7. The method for manufacturing a silicon device according to claim 1, wherein the step of removing the foreign matter is performed in a state where a surface of the wiring is protected by a protective film. The method for manufacturing a silicon device according to claim 7, wherein the protective film is a thermal peeling tape. At least a flow path forming substrate wafer including a plurality of flow path forming substrates having piezoelectric elements and a protective substrate wafer including a plurality of protective substrates protecting the piezoelectric elements are joined, and divided to divide the liquid from the nozzle openings. In the method of manufacturing a liquid ejecting head as a liquid ejecting head that discharges liquid, the metal layer formed on the protective substrate wafer having at least a narrow groove opening on the surface is etched using a first etching solution. Using a step of forming a wiring on the protective substrate wafer and a second etching solution in which alcohol is added to a concentration of 5 to 15%, at least the foreign matter on the metal layer adhering to the narrow groove is removed. And a step of removing the liquid jet head by etching.

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