JP4668659B2 - Joining member and method for producing joining member - Google Patents

Description

The present invention relates to a bonding member between wafers, or a bonding member between a wafer and a material different from the wafer, and a manufacturing method thereof.
In particular, the present invention relates to the field of masks and the field of micro electro mechanical systems (hereinafter also referred to as MEMS).
Examples of the mask include a structure using a wafer such as a charged particle beam transfer mask and an X-ray transfer mask, and the MEMS has a diaphragm structure, a beam structure, and a membrane structure formed on the wafer. Examples include elements and structures.
As main examples of the charged particle beam transfer mask, in addition to the ion beam transfer mask, an electron projection lithography (hereinafter also referred to as EPL) mask, a low-speed electron beam proximity projection lithography (Low-) There is an electron beam transfer mask such as an Energy Electron-Beam Proximity-Projection Lithography (hereinafter also referred to as LEEPL, LEEPL is a registered trademark).
Here, the wafer includes an unprocessed wafer and a processed wafer. The processed wafer includes each of the above wafer structures.

Accompanying the development of microfabrication technology in recent years, for example, the development of electron beam masks such as EPL and LEEPL, and the development of MEMS and the like, wafers are bonded together, or wafers such as wafers and frames are made of the same or different materials. It may be joined with materials made of raw materials.
Here, bonding of wafers means reversible or irreversible bonding of wafers or materials different from wafers by some method, but here “irreversible” (that is, never peel off) ).
As a bonding method, typically, (1) fusion bonding 1 (direct bonding), (2) fusion bonding 2 (Si—O—Si bonding), (3) anodic bonding, (4) metal bonding, (5) Although bonding by an adhesive is mentioned, these will be briefly described below.
<(1) Fusion bonding 1 (direct bonding)>
The Si surface is treated with plasma, etc., and the flat surfaces are directly joined together. When joining wafers, the dangling bonds of Si are exposed by plasma treatment, and the wafers are brought into contact with each other in this state. When pressure and heat are applied accordingly, Si dangling bonds are bonded to each other.
This joining can be performed at a low temperature, and surface treatment, application of heat and pressure are performed.
It is used in the production of MEMS and the like.
Patent WO9910927 (US19970057413 (priority claim)) <(2) Fusion bonding 2 (Si-O-Si bonding)> On the Si surface, SiO2 is formed on one side or both sides and subjected to hydrophilic treatment, and then adhered. By heating and heating, a hydrophilic group (OH group) is caused to react, thereby removing excess H 2 O and bonding the wafer by bonding with Si and O. Bonding is possible even at a low temperature, but in order to obtain a sufficient bonding force, a temperature of 1000 ° C. or higher is generally required, and surface treatment or application of pressure may also be performed. It is used for wafer manufacturing (Silicon On Insulator) and fabrication of MEMS. Applied Physics Vol. 63, No. 11, 1994 “Laminated SOI Technology for ULSI” <(3) Anodic Bonding> This is a method in which glass containing mobile ions (mainly sodium) and a silicon wafer are brought into close contact with each other. At the time of bonding, the above glass and wafer are superposed and heated to soften the glass side, and at the same time, a high voltage is applied between the two using the silicon side as an anode. Thereby, the joining force by electrostatic attraction is obtained. The electrostatic attractive force maintains the bonding force because the electric double layer is fixed by turning off the voltage and returning the temperature. Semiconductor Manufacturing Equipment Glossary 5th edition Japan Semiconductor Manufacturing Equipment Association edited by Nikkan Kogyo Shimbun, Ltd. <(4) Metal bonding> After forming a metal film on both sides or one side of the opposing bonding surface and making it in close contact , The metal melts and melts, or is heated and pressurized under the heating and pressurizing conditions to eutect with the facing substrate, and in some cases, ultrasonic vibration is applied to perform bonding. is there. As a material for bonding Si, a solder material containing Au or Au is often applied. Before reaching the bonding temperature and pressure and melting or eutectic with the base material, the adhesion (wetability) between the metal and the base material is not good and may cause peeling. In this case, an adhesion improving layer (also referred to as a wetting layer) may be provided between the base material and the metal. Used for fabrication of MEMS. LOW TEMPERRATURE EUTECTIC BONDING FOR IN-PLANE TYPE MICRO THERMOELECTRIC COOLER Da-Jeng YAO, Gang CHEN, and Chang-Jin "CJ" KIM Proceedings 2001 ASME International Mechanical Engineering Congress and Exposition November 11-16,2001, New York, NY <( 5) Bonding with an adhesive> Bonding is performed with a resin such as an epoxy, and bonding strength is determined by an adhesive, pressure, heat, and the like, and is used for manufacturing a MEMS. VOID-FREE FULL WAFER ADHESIVE BONDING Frank Niklaus, Peter Enoksson, Edward K. Ivesten and G.M. ran Stemmed Presented at the 13th IEEE Int. Conference on Micro Electro Mechanical System (MEMS'00) Miyazaki Japan, January 23-27, pp. 247-251

As the end face shape of the wafer to be bonded, there are typically two types, an R type shown in FIG. 9B and a T type shown in FIG. 9C.
9B and 9C show cross-sectional views taken along G1-G2 across the outer peripheral edge of the wafer 110 shown in FIG. 9A.
These shapes are generally formed by a chamfering process called beveling of a blade method or a tape polishing method. (See Non-Patent Document 2)
In the blade method, a plan view is shown in FIG. 10A, and a part of the H1-H2 cross section in FIG. 10A is shown in FIG. It is pressed against the blade 120 having a shape matched to the above and polished.
The polishing is performed while fixing and rotating the wafer on the spinner 140 as shown in FIG.
In the tape polishing method, the end surface is tape-polished. For example, FIG. 11A shows a plan view thereof, and FIG. 11C shows a part of the I1-I2 cross section of FIG. The polishing tape 131 is sent out by the roller 132 using the tape polishing unit 130 and the end surface of the wafer 110 is polished.
The polishing is performed while fixing and rotating the wafer on the spinner 140 as shown in FIG.

When R-type wafers having such end face shapes, T-type wafers, R-type wafers and T-type wafers are used to join the wafers, the end face shapes after bonding are shown in FIG. ) To FIG. 12 (c).
In these cases, it is strong against a force perpendicular to the joint surface, but weak against a force against the end face (boundary).
The bonding surface 114a is strong against a pulling force as indicated by an arrow in FIG. 13A, and an excessive pulling force causes peeling at a portion other than the bonding surface as shown in FIG. 13A1.
Further, when a force from the side surface as shown in FIG. 13B is applied, it easily peels off at the joint surface 114b as shown in FIG. 13B1.
Edges (ends) are likely to come into contact with each other when handling or holding in the device, and as shown in FIG. 14, there is a possibility that external force may be applied from various directions. In the (end portion), the external force may cause chipping or peeling.
The tensile force is measured as shown in FIG. 8, for example.
In this method, the upper surface of the joining member 50 is fixed to the upper portion of the tension jig 81 with the adhesive 70, the lower surface of the joining member 50 is fixed to the lower portion of the tension jig 82 with the adhesive 70, and a tensile force is applied in the direction of the arrow. The tensile force at which the joining member breaks is measured.

Although wafer bonding depends on the processing method, fine voids (also referred to as voids) are likely to occur near the periphery and between wafers to be bonded, and the bonding state near the periphery is worse than that near the center. There is a case.
The wafer is not bonded in the minute gap.
In addition, as shown in FIG. 15, the infrared detection camera 230 is irradiated on the opposite surface side of the said one surface by irradiating the infrared light 220 with respect to the joining member 210 of wafers from one surface, and the infrared light which passes Si. Thus, the bonding member 210 can be photographed, and the gap generated between the wafers 211 and 212 to be bonded can be detected.

As described above, with the progress of microfabrication technology in recent years, wafers may be joined together, or wafers and different materials may be joined with the goal of irreversible joining. The shape is strong against the force perpendicular to the joint surface, but weak against the force on the end face (boundary), and the edge may come into contact when handling or holding in the device. Since there is a possibility that external force is applied from various directions, this part may cause chipping that causes defects due to external force, and peeling may occur on the joint surface. This response was sought.
The present invention is corresponding to this, and the cross-sectional shape of the end portion is less than that of the conventional one, and in particular, the bonding member between wafers or the wafer which has a shape in which chipping and peeling at the bonding surface are less likely to occur. The present invention intends to provide a joining member with another material.
At the same time, the present invention intends to provide a method for producing such a joining member.

Joining member of the present invention, the wafer is first material consisting of Si, a joining member joined to one surface of the second material consisting of Si, the first wafer is a material, the thin film structure The second material is a frame for supporting the first material and is made of a wafer, and the end of the wafer as the first material is positioned on one surface of the second material. is, those bonded by direct bonding, the cross-sectional shape of the outer end portion of the first wafer which is a material, outer periphery, lines, arcs, or combinations thereof shaped, the junction of the second material Is characterized in that it is the outermost on the side surface side and is convex on the outer side.
In this case, the wafer includes an unprocessed wafer and a processed wafer, and the processed wafer includes a wafer forming a mask having a thin film structure, a diaphragm structure, a beam structure, and a membrane structure. It includes wafers that form MEMS of elements and structures.
Further, “outwardly convex” means that in the cross-sectional shape, the outer periphery is a shape that approaches the joining surface side as it goes from the inside to the outside of the joining member continuously, This includes the case where the outer circumferences of one or both of the cross-sectional shapes of wafers or wafers and other materials forming the bonding member are orthogonal to the bonding surface at the outermost position of the bonding portion.

The manufacturing method of the joining member of this invention is a manufacturing method of the joining member which produces the joining member of Claim 1, Comprising: The edge part of the wafer which is the said 1st raw material used as joining object is made into predetermined shape. After the processing, both the first material and the second material are joined by direct joining .

(Function)
By adopting such a configuration, the joining member according to the first aspect of the invention makes it difficult for the cross-sectional shape of the end portion to cause chipping of the wafer as the first material, particularly chipping and peeling off at the joint surface. It is possible to provide a bonding member formed between the wafer, which is the first material, and the second material. Specifically, the wafer is first material consisting of Si, a joining member joined to one surface of the second material consisting of Si, the first wafer is a material having a thin film structure A mask, and the second material is a frame for supporting the first material, is made of a wafer, and an end portion of the wafer as the first material is positioned on one surface of the second material, In the cross-sectional shape of the outer edge of the wafer, which is the first material, the outer periphery is a straight line, an arc, or a combination thereof, and the joint with the second material is a side surface. This is achieved by being outermost on the side and convex on the outside.
As such a joining member, specifically, a mask structure such as a mask for LEEPL corresponds to this.

The manufacturing method of the joining member according to the invention of claim 2 makes it difficult to generate chipping, particularly chipping and peeling at the joining surface, by adopting such a configuration. It is possible to provide a method for producing a joining member for producing a joining member having a shape, or a joining member having a first material as a wafer and a second material as a different material.

As described above, the present invention makes it possible to provide a joining member that is less likely to cause chipping, particularly chipping and peeling on the joint surface, as compared with the conventional one.
At the same time, it was possible to provide a method for producing such a joining member.

Embodiments of the present invention will be described with reference to the drawings.
1 (a) is in a plane view of Reference Embodiment 1 of the bonding member according to the present invention, in a sectional view along A1-A2 of FIG. 1 (b) FIGS. 1 (a), FIG. 2 (a), the 2 (b) and FIG. 2 (c) are views showing the end portions of the modified example of the reference embodiment example 1 shown in FIG. 1, and FIG. 3 (a) and FIG. FIG. 4 is a view for explaining a method of manufacturing the joining member of Reference Embodiment Example 1 shown in FIG. 1, and FIG. 4A is a cross-sectional view of the first example of the joining member embodiment of the present invention. 4 (b) is a plan view seen from the C0 side of FIG. 4 (a), FIG. 5 is a cross-sectional view of a conventional mask joining member for LEEPL, and FIG. 6 (a) shows the bonding strength in terms of adhesion strength. FIG. 6 (b) is a perspective view showing the outer dimensions of the blade part used in the test of FIG. 6 (a), and FIG. Evaluate A schematic view showing a method of testing a case, FIG. 8 is a schematic view for explaining a tensile test method.
In addition, the dotted line part A3 in FIG. 1, the dotted line parts A31, A32, and A33 in FIG. 2, the dotted line part C1 in FIG. 4, and the dotted line part D1 in FIG. ing.
FIG. 6 (b) is an enlarged view of the E1 portion of FIG. 6 (a).
1 to 8, 1, 1a, 1b, 1c, 1A, 1B are bonding members, 2, 2a, 2b, 2c, 2A, 2B are wafers, 3, 3a, 3b, 3c, 3A, 3B are wafers, 4, 4a, 4b, 4c, 4A, 4B are joint surfaces, 5, 5a, 5b, 5c, 5A, 5B are outer peripheries, 6, 6a, 6b, 6c, 6A, 6B are joints (outer perimeter), 10 is Wafer structure (also simply referred to as a wafer or mask), 11 is a Si wafer, 12 is a SiO2 layer, 13 is a Si thin film, 14 is an exposure area (also referred to as a pattern area), 15 is a hole, 18 is a polished surface, 18A is R-type polishing surface, 20 is a frame, 30 is a bonding surface, 50 is a bonding member, 51, 51a, 52 and 52a are wafers, 53 and 53a are bonding surfaces, 60 is a blade, 70 is an adhesive, and 81 is a tensile member A jig upper part 82 is a tension jig lower part.

First , a reference embodiment example 1 of a joining member according to the present invention will be described with reference to FIG.
The joining member 1 of the reference embodiment 1 is a joining member obtained by joining the Si wafers 2 and 3 having a size of 8 inches and a thickness of 0.725 mm by the fusion joining 1 (direct joining) described above.
As shown in FIG. 1B, the outer end portions of the wafers 2 and 3 on the bonding side are joined to each other and bonded to each other. 3 has an arc shape, and the outer periphery 5 on the side surface side of the bonding member 1 having a cross-sectional shape is such that the bonding portion 6 of both wafers 2 and 3 is the outermost and convex outward. .
In the case of this example, the shape of the outer periphery of the cross section of the outer end portion is the same shape as the R shape shown in FIG.
By doing in this way, the cross-sectional shape of the outer end portion of the joining member 1 is less likely to cause chipping, particularly chipping and peeling at the joint surface, compared to the conventional one.
There are no gaps in the joint 6 of the joining member 1, and the tensile force perpendicular to the joining surface of the joining member and the external force from the side perpendicular to the joining member, as compared with the conventional joining member, are chipped or peeled off at the joining surface. The structure is less likely to occur.

As a manufacturing method of the joining member 1 of this example, there is a first manufacturing method whose outline is shown in FIG. 3A and a second manufacturing method whose outline is shown in FIG.
In the first manufacturing method, the end portions of both wafers 2A and 2B to be bonded are beveled into a predetermined shape, and then the wafers 2A and 2B are bonded to each other by fusion bonding 1 (direct bonding).
In the second manufacturing method, both the wafers 2A and 2B to be bonded are bonded to each other, and then the end portions of both bonded wafers 2A and 2B are beveled into a predetermined shape.
As described above, the beveling process is performed using a blade as shown in FIG. 10 or using a tape polishing unit as shown in FIG.
Strictly speaking, the bonding member bonded by the first manufacturing method described above cannot realize the above-described cross-sectional shape (hereinafter referred to as an ideal shape) due to the misalignment of the wafers 2A and 2B.
However, when the displacement is smaller than about 100 micrometers, the performance of the joining member with respect to external force is equivalent to the performance of the ideal shape joining member.

As a joining member of the modified example of this example, the shape of the outer end portion of the joining member obtained by joining the wafers has a cross section shown in FIGS. 2 (a), 2 (b), and 2 (c). Is mentioned.
In both of these, the surfaces of the wafers to be joined are joined together and joined together, and the outer periphery has a linear combination shape in the cross-sectional shape of the outer end, and the joining parts of both wafers are It is outermost on the side surface side and convex on the outer side.
In the case of the cross section shown in FIG. 2A, the shape of the outer periphery of the cross section of the outer end is the same shape as the T type shown in FIG.
From the surface of the chip, the cross-sectional shape of the end portion of the joining member 1 of this example shown in FIG. 1 is most preferable in the R type, but the T type shown in FIG.

Next, a first example of the embodiment of the joining member of the present invention will be described with reference to FIG.
The bonding member of the first example is a mask for LEEPL (wafer structure) 10 obtained by processing a Si wafer having a size of 8 inches and a thickness of 0.725 mm so as to have a 6-inch size in a substantially square shape. This is a joining member joined to a square frame 20 made of Si having a 6-inch square shape by fusion joining 1 (direct joining), and the end of the wafer structure 10 is positioned on one surface of the frame 20. is there.
The wafer structure 10 is also simply referred to as a wafer or a mask.
As shown in FIG. 4A, the outer periphery of the cross section of the wafer structure 10 is a linear shape, and the outer periphery of the side surface side of the outer cross sectional shape is the outermost portion of the junction with the one wafer and the outer side. Convex shape.
This makes it difficult for chipping of the wafer structure 10, particularly chipping and peeling at the bonding surface 30.
Conventionally, the joining member obtained by joining the LEEPL mask (wafer structure) 10 to the frame 20 has a cross section as shown in FIG. 5 and the shape of the outer periphery of the cross section of the outer end of the wafer structure 10 is R. The mold is bonded to the frame in the outer peripheral shape, and the wafer structure 10 is chipped in the process processing such as exposure processing and cleaning, and in particular, the chipping and peeling are generated on the bonding surface 30 and become a problem. It was.

As a manufacturing method of the bonding member of the first example, the wafer structure 10 is usually welded to one surface of the frame 20 after the end of the wafer structure 10 to be bonded is beveled into a predetermined shape. The method of joining by direct joining) is taken.

As a modified example of the first example, there is a case where the frame 20 of the first example is made of an alkaline aqueous solution containing OH groups instead of Si and made of a material having etching resistance.
As a manufacturing method in this case, the wafer structure is bonded to one surface of the frame by fusion bonding 1 (direct bonding) after being polished and beveled like the manufacturing method of the bonding member of the first example. In addition to the first method, after the wafer structure 10 is bonded to the frame 20 by the fusion bonding 1 (direct bonding), the end of the wafer structure 10 is bonded to an alkaline aqueous solution containing OH groups, such as potassium hydroxide. There is a second method in which a cross-sectional shape corresponding to the polished surface 18 as shown in FIG. The second method utilizes the property that the etching rate of the wafer varies depending on the crystal plane orientation.
For example, when etching is performed with a potassium hydroxide aqueous solution from the (100) surface side of the wafer, the etching proceeds so that the (111) surface is exposed.

The joining member of Reference Embodiment Example 1 and the joining member of the first example are one example, and the joining member according to the present invention is not limited thereto.
In the case of the joining member of the reference embodiment example 1 and the joining member of the first example , the joining members are joined by the fusion joining 1 (direct joining), but the fusion joining 2 (Si—O—) described above is used. Si bonding), anodic bonding, metal bonding, and bonding with an adhesive can also be mentioned.
In addition, the bonding member wafer structure 10 of the first example is a mask for LEEPL, but other structures using wafers such as a charged particle beam transfer mask, an X-ray transfer mask, and the like can be given. In addition, an element or a structure having a diaphragm structure, a beam structure, or a membrane structure formed on a wafer can be used.

尚、表１で測定不能は、刃部６０の先端が入らなかったものである。
また、ＭＰａはメガパスカルを表す。
試験片Ｎｏ３については、ｆが５３．９ＭＰａで、接合面５３に剥れが発生した。
これより、ｆ１は５３．９ＭＰａと判断された。
また、図７（ａ）は、それぞれ、Ｒ型の形態の端部断面を有するＳｉウエハ同士（５１、５２）を接合した、サイズ１５ｍｍ□の試験片からなる接合部材の、側面側から刃部６０を外力ｆにより押し当てて、破壊に至った外力ｆ２を測定したものである。
図６（ｂ）に示す刃部と同じ形状サイズの刃部を用いた。
この場合、結果は表２のようになった。

上記のように、図６に示す本発明の接合部材におけるｆ１は５３．９ＭＰａで、図７に示す従来の、接合部材におけるｆ２は０．６ＭＰａ〜４．７ＭＰａの範囲にわたり、接合の強度の比較を示す指標としてｆ１とｆ２の比ｆ１／ｆ２をとってみると、ｆ１／ｆ２は、１２〜８９となった。
これより、図６に示す本発明に関わる接合部材の方が、図７に示す従来の接合部材よりも接合面の接合強度が１桁以上大きいことが分かる。
尚、図６に示す接合部材以外の端部の断面を有する本発明に関わる接合部材についても、その構造から、基本的には、同様な接合の強度が期待できる。 Here, the adhesive strength of the joining member according to the present invention will be briefly described with reference to FIG. 6, FIG. 7, and FIG.
FIG. 6A shows a test piece having a size of 15 mm □ in which Si wafers (51, 52) having the cross-sectional shape of the end shown in FIG. 2B are joined together by fusion joining 1 (direct joining). The external force f1 which resulted in the fracture | rupture was measured by pressing the blade part 60 with the external force f from the side surface side.
The end surface (side surface) of the Si wafer 51 is formed by etching with an aqueous potassium hydroxide solution, and the end surface (side surface) of the wafer 52 is a surface formed by dicing.
The shape dimension of the blade part 60 is as shown in FIG.6 (b).
In this case, the results are as shown in Table 1.

In Table 1, “impossible to measure” means that the tip of the blade portion 60 did not enter.
MPa represents megapascal.
Regarding test piece No3, f was 53.9 MPa, and peeling occurred on the joint surface 53.
From this, f1 was determined to be 53.9 MPa.
FIG. 7 (a) shows a blade part from the side surface of a joining member made of a test piece of size 15 mm □, in which Si wafers (51, 52) each having an R-shaped end section are joined together. 60 is pressed by an external force f, and the external force f2 that has led to destruction is measured.
A blade portion having the same shape and size as the blade portion shown in FIG.
In this case, the result was as shown in Table 2.

As described above, f1 in the joining member of the present invention shown in FIG. 6 is 53.9 MPa, and f2 in the conventional joining member shown in FIG. 7 is in the range of 0.6 MPa to 4.7 MPa. When the ratio f1 / f2 of f1 and f2 is taken as an index indicating f1, f1 / f2 is 12 to 89.
From this, the direction of the joining member according to the present invention shown in FIG. 6, it can be seen bonding strength of the bonding surface than conventional joining members shown in FIG. 7 is greater by one digit or more.
In addition, regarding the joining member according to the present invention having a cross section at the end other than the joining member shown in FIG. 6, basically the same joining strength can be expected from the structure.

このように、図６に示す接合部材については、破壊する引っ張り力ｆ０は、ｆ１と同程度の大きさで、図６に示す接合部材の接合強度が端面側（側面側）からの力に対しても十分強いことが分かる。
尚、図８に示す引っぱり試験方法は、引っ張り冶具上部８１に接合部材５０の上面を接着材７０により固定し、引っ張り冶具下部８２に接合部材５０の下面を接着材７０により固定し、矢印の方向に引っ張り力をかけて、接合部材が破壊する引っ張り力を測定する。 For reference, the breaking force f0 for the joining member shown in FIG. 6 was measured by the tensile test method shown in FIG.

Thus, with respect to the joining member shown in FIG. 6, the tensile force f0 to be broken is as large as f1, and the joining strength of the joining member shown in FIG. 6 is relative to the force from the end face side (side face side). However, it turns out that it is strong enough.
In the pulling test method shown in FIG. 8, the upper surface of the joining member 50 is fixed to the upper portion of the tension jig 81 with the adhesive 70, and the lower surface of the joining member 50 is fixed to the lower portion of the tension jig 82 with the adhesive 70. A tensile force is applied to, and the tensile force at which the joining member breaks is measured.

1 (a) is in a plane view of Reference Embodiment 1 of the bonding member according to the present invention, FIG. 1 (b) is a cross-sectional view taken along A1-A2 of FIG. 1 (a). 2 (a), 2 (b), and 2 (c) are views showing the end portions of a modification of the reference embodiment example 1 shown in FIG. FIG. 3A and FIG. 3B are views for explaining a method of manufacturing the joining member of the reference embodiment example 1 shown in FIG. FIG. 4A is a sectional view of a first example of the embodiment of the joining member of the present invention, and FIG. 4B is a plan view seen from the C0 side of FIG. FIG. 5 is a cross-sectional view of a conventional LEEPL mask bonding member. FIG. 6A is a schematic diagram of a test method in the case where the strength of bonding is evaluated by the strength of bonding, and FIG. FIG. It is the schematic which showed the test method in the case of evaluating the intensity | strength of joining by the strength of adhesion | attachment. It is the schematic for demonstrating the tension test method. It is a figure for demonstrating the cross-sectional shape of the edge part of the outer side of the conventional wafer. It is a figure for demonstrating the beveling by a blade. It is a figure for demonstrating the beveling by tape grinding | polishing. It is a figure for demonstrating the cross-sectional shape of the outer edge part of the joining member which joined the conventional wafers. It is a figure for demonstrating destruction by the pulling force of the joining member which joined the conventional R type wafers, and the external force from a side surface, and peeling. It is a figure for demonstrating the chip | tip in the conventional joining member. It is a figure for demonstrating the imaging | photography method for imaging the space | gap in adhesion | attachment of a joining member.

Explanation of symbols

1, 1a, 1b, 1c, 1A, 1B Bonding member 2, 2a, 2b, 2c, 2A, 2B Wafer 3, 3a, 3b, 3c, 3A, 3B Wafer 4, 4a, 4b, 4c, 4A, 4B Bonding surface 5, 5a, 5b, 5c, 5A, 5B Outer periphery 6, 6a, 6b, 6c, 6A, 6B (outer periphery) joint 10 Wafer structure (also simply referred to as wafer or mask)
11 Si wafer 12 SiO ₂ layer 13 Si thin film 14 Exposure region (also referred to as pattern region)
15 Hole 18 Polishing surface 18A R-type polishing surface 20 Frame 30 Joining surface 50 Joining member 51, 51a, 52, 52a Wafer 53, 53a Joining surface 60 Blade part 70 Adhesive 81 Upper part of tension jig 82 Lower part of tension jig 110 Wafer 110a Edges 111-116 Wafer 111a, 111b, 111c Wafer 112a, 112b, 112c Wafer 114a, 114b, 114c Joining surface 120 Blade 130 Tape unit 131 Polishing tape 132 Roller 140 Spinner 210 Joining member 211, 212 Wafer 220 Infrared light 230 Infrared Detection camera

Claims (2)

A first wafer which is a material composed of Si, a joining member joined to one surface of the second material consisting of Si, the first wafer is a material, a mask having a thin-film structure, wherein The second material is a frame for supporting the first material, and is made of a wafer. The end of the wafer, which is the first material, is positioned on one surface of the second material, and is joined by direct joining. In the cross-sectional shape of the outer edge of the wafer, which is the first material, the outer periphery is a straight line, an arc, or a combination thereof, and the joint with the second material is on the outermost side on the side surface side. And the joining member characterized by being convex outward. A manufacturing method of a bonding member for manufacturing the bonding member according to claim 1, wherein after processing an end portion of a wafer as the first material to be bonded into a predetermined shape, the first material and A method for producing a joining member, wherein the two materials of the second material are joined by direct joining .

Images