JP4664686B2 - Process for producing polysilanes - Google Patents
Process for producing polysilanes Download PDFInfo
- Publication number
- JP4664686B2 JP4664686B2 JP2005002332A JP2005002332A JP4664686B2 JP 4664686 B2 JP4664686 B2 JP 4664686B2 JP 2005002332 A JP2005002332 A JP 2005002332A JP 2005002332 A JP2005002332 A JP 2005002332A JP 4664686 B2 JP4664686 B2 JP 4664686B2
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- Prior art keywords
- electrode
- compound
- polysilane
- reaction
- mol
- Prior art date
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- 229920000548 poly(silane) polymer Polymers 0.000 title claims description 41
- 238000000034 method Methods 0.000 title description 10
- 150000001875 compounds Chemical class 0.000 claims description 55
- 238000003411 electrode reaction Methods 0.000 claims description 21
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 20
- -1 magnesium halide Chemical class 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 16
- 239000003115 supporting electrolyte Substances 0.000 claims description 16
- 239000000010 aprotic solvent Substances 0.000 claims description 15
- 239000011777 magnesium Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 12
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 10
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 10
- 239000010405 anode material Substances 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 229910001485 alkali metal perchlorate Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 39
- 125000003118 aryl group Chemical group 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 13
- 125000000217 alkyl group Chemical group 0.000 description 12
- 125000000753 cycloalkyl group Chemical group 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 description 7
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 6
- 125000003710 aryl alkyl group Chemical group 0.000 description 6
- 239000003575 carbonaceous material Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 5
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910001629 magnesium chloride Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 125000006682 monohaloalkyl group Chemical group 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- DIKBFYAXUHHXCS-UHFFFAOYSA-N bromoform Chemical compound BrC(Br)Br DIKBFYAXUHHXCS-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000012700 ceramic precursor Substances 0.000 description 2
- KWYZNESIGBQHJK-UHFFFAOYSA-N chloro-dimethyl-phenylsilane Chemical compound C[Si](C)(Cl)C1=CC=CC=C1 KWYZNESIGBQHJK-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000005054 phenyltrichlorosilane Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 2
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 description 1
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- 125000006720 (C1-C6) alkyl (C6-C10) aryl group Chemical group 0.000 description 1
- 125000006704 (C5-C6) cycloalkyl group Chemical group 0.000 description 1
- 125000006719 (C6-C10) aryl (C1-C6) alkyl group Chemical group 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 125000004200 2-methoxyethyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- CSDQQAQKBAQLLE-UHFFFAOYSA-N 4-(4-chlorophenyl)-4,5,6,7-tetrahydrothieno[3,2-c]pyridine Chemical compound C1=CC(Cl)=CC=C1C1C(C=CS2)=C2CCN1 CSDQQAQKBAQLLE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- IIOOIYHUTINYQO-UHFFFAOYSA-N [dimethyl(phenyl)silyl]-dimethyl-phenylsilane Chemical compound C=1C=CC=CC=1[Si](C)(C)[Si](C)(C)C1=CC=CC=C1 IIOOIYHUTINYQO-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000005036 alkoxyphenyl group Chemical group 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 229950005228 bromoform Drugs 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- FQEKAFQSVPLXON-UHFFFAOYSA-N butyl(trichloro)silane Chemical compound CCCC[Si](Cl)(Cl)Cl FQEKAFQSVPLXON-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- MNKYQPOFRKPUAE-UHFFFAOYSA-N chloro(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(Cl)C1=CC=CC=C1 MNKYQPOFRKPUAE-UHFFFAOYSA-N 0.000 description 1
- OJZNZOXALZKPEA-UHFFFAOYSA-N chloro-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](Cl)(C)C1=CC=CC=C1 OJZNZOXALZKPEA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- DTOHXGVDKNULFO-UHFFFAOYSA-N dibromo(dichloro)silane Chemical compound Cl[Si](Cl)(Br)Br DTOHXGVDKNULFO-UHFFFAOYSA-N 0.000 description 1
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- AASUFOVSZUIILF-UHFFFAOYSA-N diphenylmethanone;sodium Chemical compound [Na].C=1C=CC=CC=1C(=O)C1=CC=CC=C1 AASUFOVSZUIILF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 description 1
- 239000004137 magnesium phosphate Substances 0.000 description 1
- 229960002261 magnesium phosphate Drugs 0.000 description 1
- 229910000157 magnesium phosphate Inorganic materials 0.000 description 1
- 235000010994 magnesium phosphates Nutrition 0.000 description 1
- 159000000003 magnesium salts Chemical class 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MOOUPSHQAMJMSL-UHFFFAOYSA-N tert-butyl(trichloro)silane Chemical compound CC(C)(C)[Si](Cl)(Cl)Cl MOOUPSHQAMJMSL-UHFFFAOYSA-N 0.000 description 1
- WGHUNMFFLAMBJD-UHFFFAOYSA-M tetraethylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CC[N+](CC)(CC)CC WGHUNMFFLAMBJD-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- LFXJGGDONSCPOF-UHFFFAOYSA-N trichloro(hexyl)silane Chemical compound CCCCCC[Si](Cl)(Cl)Cl LFXJGGDONSCPOF-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000002256 xylenyl group Chemical group C1(C(C=CC=C1)C)(C)* 0.000 description 1
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- Silicon Polymers (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Description
本発明は、流通系(特にマイクロリアクターを用いた流通系)において、電極反応により効率よくポリシランを製造する方法に関する。 The present invention relates to a method for efficiently producing polysilane by electrode reaction in a distribution system (particularly a distribution system using a microreactor).
ポリシランは、セラミックス前駆体、光電子材料(例えば、フォトレジスト、有機感光体などの光電子写真材料、光導波路などの光伝送材料、光メモリなどの光記録材料、エレクトロルミネッセンス素子用材料など)などとして注目されている。 Polysilanes are attracting attention as ceramic precursors, optoelectronic materials (for example, photoelectrophotographic materials such as photoresists and organic photoreceptors, optical transmission materials such as optical waveguides, optical recording materials such as optical memories, and materials for electroluminescent elements). ing.
ポリシランの製造方法としては、金属ナトリウムなどのアルカリ金属を還元剤として用いて、トルエン溶媒中、100℃以上の温度及び強力な撹拌下で、ジアルキルジハロシラン又はジハロテトラアルキルジシランを還元的にカップリングさせる方法が知られている[J.Am.Chem.Soc.,103(1981年)、7352頁(非特許文献1)]。しかし、上記方法では、空気中で発火するアルカリ金属を加熱し、強力に攪拌・分散させる必要があるため、工業的規模での生産に際しては安全性に大きな問題がある。また、分子量分布が多峰性になるなど品質に関しても問題がある。 As a method for producing polysilane, dialkyldihalosilane or dihalotetraalkyldisilane is reductively reduced in toluene solvent at a temperature of 100 ° C. or higher and with strong stirring using an alkali metal such as sodium metal as a reducing agent. Coupling methods are known [J. Am. Chem. Soc. 103 (1981), p. 7352 (Non-Patent Document 1)]. However, in the above method, it is necessary to heat and strongly stir and disperse the alkali metal that ignites in the air, so that there is a big problem in safety in production on an industrial scale. There are also problems with quality, such as the molecular weight distribution being multimodal.
これらの諸問題を解決すべく、電極反応を利用して、ポリシランを製造する方法が提案されている。例えば、特許第3291564号公報(特許文献1)には、支持電解質としての過塩素酸塩及び非プロトン性溶媒を用い、一方の極にMg,Cu又はAl、他方の極に前記一方の極と同種又は異種の導電材料を用いて、ジハロシラン、トリハロシラン及びテトラハロシランのうち2種のハロシランを電極反応に供し、1〜20秒の間隔で電極の極性を切り替えることにより網目状ポリシランを製造する方法が開示されている。また、特許第3106205号公報(特許文献2)には、支持電解質としての過塩素酸テトラアルキルアンモニウム及び非プロトン性溶媒を用い、Mgを陽極とする電極反応に、ジハロシランを供し、ポリシランを製造する方法が開示されている。しかし、上記電極反応では、通電に伴って多量のジュール熱が発生し、ジュール熱を除去する必要が生じる。しかし、バッチ式では、反応温度の制御が難しく、ポリシランの分子量を制御するのが困難である。
従って、本発明の目的は、電極材料の種類に拘わらず、流通系であってもポリシランを効率よく製造できる方法を提供することにある。 Accordingly, an object of the present invention is to provide a method capable of efficiently producing polysilane even in a distribution system regardless of the type of electrode material.
本発明の他の目的は、反応温度の制御が容易で、分子量の調節が容易なポリシランの製造方法を提供することにある。 Another object of the present invention is to provide a method for producing a polysilane in which the reaction temperature can be easily controlled and the molecular weight can be easily adjusted.
本発明者らは、前記課題を達成するため鋭意検討した結果、電極反応に供する混合物にMgイオンを含有させると、電極材料の種類によらず、流通系であっても効率よく反応できること、及び流通系で反応させることにより反応温度を容易に制御でき、ポリシランの分子量の制御が容易になることを見出し、本発明を完成した。 As a result of intensive investigations to achieve the above-mentioned problems, the inventors of the present invention can efficiently react even in a flow system, regardless of the type of electrode material, when Mg ions are included in the mixture used for the electrode reaction, and The present inventors have found that the reaction temperature can be easily controlled by reacting in a flow system, and the molecular weight of polysilane can be easily controlled.
すなわち、本発明のポリシランの製造方法は、ハロシラン化合物を電極反応に供することによりポリシランを製造する方法であって、前記ハロシラン化合物、マグネシウムイオン、支持電解質としての過塩素酸塩、及び非プロトン性溶媒を含む混合物を、流通式のマイクロリアクターに連続的に供給し、前記混合物に直流電流を通じさせる。 That is, the method for producing a polysilane of the present invention is a method for producing a polysilane by subjecting a halosilane compound to an electrode reaction, the halosilane compound, magnesium ions, a perchlorate as a supporting electrolyte, and an aprotic solvent. Is continuously supplied to a flow-through microreactor, and direct current is passed through the mixture.
前記ハロシラン化合物は、下記式(1)で表されるモノハロシラン化合物、下記式(2)で表されるジハロシラン化合物、下記式(3)で表されるトリハロシラン化合物及び下記式(4)で表されるテトラハロシラン化合物から選択された少なくとも一種であってもよい。 The halosilane compound is represented by a monohalosilane compound represented by the following formula (1), a dihalosilane compound represented by the following formula (2), a trihalosilane compound represented by the following formula (3), and the following formula (4). Or at least one selected from tetrahalosilane compounds.
(式中、X1〜X4は同一又は異なってハロゲン原子を示し、R1〜R3は同一又は異なって、水素原子、有機基又はシリル基を示す)
前記ハロシラン化合物は、モノ乃至トリハロシラン化合物(例えば、ジアルキルモノアリールモノハロシラン、モノアルキルモノアリールジハロシラン、モノアリールトリハロシランなど)などであってもよい。
(Wherein X 1 to X 4 are the same or different and each represents a halogen atom, and R 1 to R 3 are the same or different and each represents a hydrogen atom, an organic group or a silyl group)
The halosilane compound may be a mono to trihalosilane compound (for example, dialkylmonoarylmonohalosilane, monoalkylmonoaryldihalosilane, monoaryltrihalosilane, etc.).
前記支持電解質としては、過塩素酸アルカリ金属塩などが使用でき、マグネシウムイオン源としてマグネシウムハライドなどが使用できる。また、前記非プロトン性溶媒は、テトラヒドロフラン、1,2−ジメトキシエタンなどのエーテルなどの非プロトン性極性溶媒であってもよい。前記電極反応において、少なくとも陽極材料として、通電により非溶出性の材料を用いてもよい。例えば、陽陰極が、炭素電極(微細炭素電極など)であってもよい。また、前記混合物を、空間速度1〜10h-1程度で反応器に流通させてもよい。 As the supporting electrolyte, alkali metal perchlorate can be used, and magnesium halide can be used as a magnesium ion source. The aprotic solvent may be an aprotic polar solvent such as ether such as tetrahydrofuran and 1,2-dimethoxyethane. In the electrode reaction, a material that is non-eluting by energization may be used as at least the anode material. For example, the positive electrode may be a carbon electrode (such as a fine carbon electrode). Further, the mixture may be passed through the reactor at a space velocity of about 1 to 10 h −1 .
なお、本明細書中、用語「ポリシラン」は、ジシランなどのオリゴシランも含む意味で用いる。 In this specification, the term “polysilane” is used to include oligosilanes such as disilane.
本発明では、電極反応に供する基質混合物に、Mgイオンを含有させるので、電極材料の種類に拘わらず、流通系であってもポリシランを効率よく製造することができる。また、電極反応を流通系で行うことができるので、反応温度を容易に制御することができ、その結果、分子量を容易に制御することができ、高品質のポリシランを製造できる。さらに、少なくとも陽極材料として、通電により非溶出性又は非消耗性の材料(例えば、炭素材料など)を用いると、電極を交換する必要がなく、安定して連続的にポリシランを製造できる。 In the present invention, Mg ions are contained in the substrate mixture to be subjected to the electrode reaction, so that polysilane can be efficiently produced regardless of the type of the electrode material even in the flow system. In addition, since the electrode reaction can be carried out in a flow system, the reaction temperature can be easily controlled. As a result, the molecular weight can be easily controlled, and high-quality polysilane can be produced. Furthermore, when a non-eluting or non-consumable material (for example, a carbon material) is used as the anode material, the polysilane can be stably and continuously produced without replacing the electrode.
本発明では、ハロシラン化合物、マグネシウムイオン、支持電解質としての過塩素酸塩、及び非プロトン性溶媒を含む混合物(基質混合物又は原料混合物)を、流通式のマイクロリアクターに連続的に供給し、前記混合物に直流電流を通じさせて、ポリシランを製造する。 In the present invention, a mixture (substrate mixture or raw material mixture) containing a halosilane compound, magnesium ions, a perchlorate as a supporting electrolyte, and an aprotic solvent is continuously supplied to a flow-through microreactor, and the mixture A polysilane is produced by passing a direct current through the substrate.
(ハロシラン化合物)
電極反応に供するハロシラン化合物としては、モノ乃至テトラハロシラン化合物が使用できる。モノ乃至テトラハロシラン化合物としては、例えば、前記式(1)〜(4)で表される化合物が例示できる。
(Halosilane compound)
As the halosilane compound used for the electrode reaction, a mono- to tetrahalosilane compound can be used. Examples of the mono to tetrahalosilane compound include compounds represented by the above formulas (1) to (4).
前記式(1)、(2)及び(3)において、R1〜R3で表される有機基としては、アルキル基[メチル、エチル、プロピル、イソプロピル、ブチル及びt−ブチル基などの直鎖状又は分岐鎖状C1-10アルキル基(好ましくはC1-6アルキル基、特にC1-4アルキル基など)など]、シクロアルキル基(シクロヘキシル基などのC5-8シクロアルキル基、特にC5-6シクロアルキル基など)、アリール基(フェニル、ナフチル基などのC6-10アリール基など)、アラルキル基[ベンジル、フェネチル基などのC6-10アリール−C1-6アルキル基(C6-10アリール−C1-4アルキル基など)など]などの炭化水素基の他、アルコキシ基[メトキシ、エトキシ、プロポキシ、イソプロポキシ、ブトキシ及びt−ブトキシ基などのC1-10アルコキシ基(好ましくはC1-6アルコキシ基、特にC1-4アルコキシ基)など]、アミノ基、及びN−置換アミノ基(前記アルキル基、シクロアルキル基、アリール基、アラルキル基、アシル基などで置換されたN−モノ又はジ置換アミノ基など)などが挙げられる。 In the above formulas (1), (2) and (3), the organic group represented by R 1 to R 3 is an alkyl group [straight chain such as methyl, ethyl, propyl, isopropyl, butyl and t-butyl groups. Or a branched C 1-10 alkyl group (preferably a C 1-6 alkyl group, particularly a C 1-4 alkyl group, etc.), a cycloalkyl group (C 5-8 cycloalkyl group such as a cyclohexyl group, in particular C 5-6 cycloalkyl group and the like), aryl groups (C 6-10 aryl groups such as phenyl and naphthyl groups), aralkyl groups [C 6-10 aryl-C 1-6 alkyl groups such as benzyl and phenethyl groups ( C 6-10 aryl-C 1-4 alkyl group etc.), etc.], as well as alkoxy groups [C 1-10 alkoxy groups such as methoxy, ethoxy, propoxy, isopropoxy, butoxy and t-butoxy groups] (Preferably C 1-6 Arco Xy group, especially C 1-4 alkoxy group, etc.], amino group, and N-substituted amino group (N-mono or di-substituted by the above alkyl group, cycloalkyl group, aryl group, aralkyl group, acyl group, etc.) Substituted amino group, etc.).
前記アルキル基、シクロアルキル基、アリール基又はアラルキル基を構成するアリール基などは、置換基を有していてもよい。このような置換基としては、前記例示のアルキル基(特にC1-6アルキル基など)、前記例示のアルコキシ基などが挙げられる。置換基の個数は、特に制限されず、1つであってもよく、複数(例えば、2〜4個)であってもよい。このような置換基を有する有機基としては、例えば、トリル、キシレニル、エチルフェニル、メチルナフチル基などのC1-6アルキルC6-10アリール基(好ましくはモノ乃至トリC1-4アルキルC6-10アリール基、特にモノ又はジC1-4アルキルフェニル基など);メトキシフェニル、エトキシフェニル、メトキシナフチル基などのC1-10アルコキシC6-10アリール基(好ましくはC1-6アルコキシC6-10アリール基、特にC1-4アルコキシフェニル基など)などが挙げられる。 The aryl group constituting the alkyl group, cycloalkyl group, aryl group, or aralkyl group may have a substituent. Examples of such a substituent include the above-exemplified alkyl groups (especially C 1-6 alkyl group and the like) and the above-exemplified alkoxy groups. The number of substituents is not particularly limited, and may be one or plural (for example, 2 to 4). Examples of the organic group having such a substituent include C 1-6 alkyl C 6-10 aryl groups such as tolyl, xylenyl, ethylphenyl, and methylnaphthyl groups (preferably mono to tri C 1-4 alkyl C 6 -10 aryl groups, especially mono or di C 1-4 alkylphenyl groups); C 1-10 alkoxy C 6-10 aryl groups such as methoxyphenyl, ethoxyphenyl, methoxynaphthyl groups (preferably C 1-6 alkoxy C) 6-10 aryl group, especially C 1-4 alkoxyphenyl group, etc.).
R1〜R3で表されるシリル基は、前記例示のアルキル基、シクロアルキル基、アリール基、アラルキル基及び/又はアルコキシ基などで置換された置換シリル基であってもよい。 The silyl group represented by R 1 to R 3 may be a substituted silyl group substituted with the above-exemplified alkyl group, cycloalkyl group, aryl group, aralkyl group, and / or alkoxy group.
これらの基のうち、水素原子又は炭化水素基、特に、炭化水素基(アルキル基、アリール基、アラルキル基など)が好ましい。 Of these groups, hydrogen atoms or hydrocarbon groups, particularly hydrocarbon groups (alkyl groups, aryl groups, aralkyl groups, etc.) are preferred.
前記式(1)〜(4)において、X1〜X4で表されるハロゲン原子には、F、Cl、Br、I原子が含まれる。これらのハロゲン原子のうち、特に、Cl及びBr(特にCl)原子が好ましい。 In the formulas (1) to (4), the halogen atoms represented by X 1 to X 4 include F, Cl, Br, and I atoms. Of these halogen atoms, Cl and Br (especially Cl) atoms are particularly preferred.
(1)モノハロシラン化合物
前記式(1)のモノハロシラン化合物において、基R1〜R3としては、アルキル基、アリール基などの炭化水素基が好ましい。
(1) Monohalosilane Compound In the monohalosilane compound of the formula (1), the groups R 1 to R 3 are preferably hydrocarbon groups such as alkyl groups and aryl groups.
モノハロシラン化合物の具体例としては、例えば、トリアルキルモノハロシラン(トリメチルクロロシランなどのトリC1-6アルキルモノハロシランなど)、ジアルキルモノアリールモノハロシラン(ジメチルフェニルクロロシランなどのジC1-6アルキルモノC6-10アリールモノハロシランなど)、モノアルキルジアリールモノハロシラン(メチルジフェニルクロロシランなどのモノC1-6アルキルジC6-10アリールモノハロシランなど)、トリアリールモノハロシラン(トリフェニルクロロシランなどのトリC6-10アリールハロシランなど)などが例示できる。モノハロシラン化合物は、単独で又は二種以上組合せて使用できる。 Specific examples of the monohalosilane compound include, for example, trialkylmonohalosilanes (such as tri-C 1-6 alkyl monohalosilanes such as trimethylchlorosilane) and dialkyl monoaryl monohalosilanes (di-C 1-6 alkyl such as dimethylphenylchlorosilane). mono- such C 6-10 aryl monohaloalkyl silane), etc. mono C 1-6 alkyl di C 6-10 aryl monohaloalkyl silane such as monoalkyl diaryl monohaloalkyl silane (methyl diphenyl chlorosilane), triaryl monohaloalkyl silane (triphenyl chlorosilane And tri-C 6-10 arylhalosilane ). A monohalosilane compound can be used individually or in combination of 2 or more types.
(2)ジハロシラン化合物
前記式(2)のジハロシラン化合物において、基R1及びR2としては、アルキル基、アリール基などの炭化水素基が好ましい。
(2) Dihalosilane Compound In the dihalosilane compound of the above formula (2), the groups R 1 and R 2 are preferably hydrocarbon groups such as alkyl groups and aryl groups.
ジハロシラン化合物の具体例としては、例えば、ジアルキルジハロシラン(ジメチルジクロロシランなどのジC1-4アルキルジハロシランなど)、モノアルキルモノアリールジハロシラン(メチルフェニルジクロロシランなどのモノC1-4アルキルモノC6-10アリールジハロシランなど)、ジアリールジハロシラン(ジフェニルジクロロシランなどのジC6-10アリールジハロシランなど)などが挙げられる。ジハロシラン化合物は、単独で又は二種以上組み合わせて使用できる。 Specific examples of dihalosilane compounds include, for example, dialkyldihalosilanes (such as diC 1-4 alkyldihalosilanes such as dimethyldichlorosilane), monoalkylmonoaryldihalosilanes (monoC 1- such as methylphenyldichlorosilane). 4 alkylmono C 6-10 aryl dihalosilane), diaryl dihalosilane (di C 6-10 aryl dihalosilane such as diphenyldichlorosilane) and the like. A dihalosilane compound can be used individually or in combination of 2 or more types.
(3)トリハロシラン化合物
式(3)で表されるトリハロシラン化合物において、R1としては、通常、アルキル基、シクロアルキル基、置換基を有していてもよいアリール基、アラルキル基などの炭化水素基が好ましい。
(3) Trihalosilane compound In the trihalosilane compound represented by the formula (3), R 1 is usually an alkyl group, a cycloalkyl group, an optionally substituted aryl group, an aralkyl group or other carbonized group. A hydrogen group is preferred.
トリハロシラン化合物の具体例としては、モノアルキルトリハロシラン(メチルトリクロロシラン、ブチルトリクロロシラン、t−ブチルトリクロロシラン、ヘキシルトリクロロシランなどのモノC1-6アルキルトリハロシランなど)、モノシクロアルキルトリハロシラン(シクロヘキシルトリハロシランなどのモノC6-10シクロアルキルトリハロシランなど)、モノアリールトリハロシラン(フェニルトリクロロシラン、トリルジクロロシラン、キシリルトリクロロシランなどのモノC6-10アリールトリハロシランなど)などが例示できる。トリハロシラン化合物は、単独で又は二種以上組み合わせて使用できる。 Specific examples of the trihalosilane compound include monoalkyltrihalosilanes (mono-C 1-6 alkyltrihalosilanes such as methyltrichlorosilane, butyltrichlorosilane, t-butyltrichlorosilane, and hexyltrichlorosilane), monocycloalkyltrihalosilanes ( Examples thereof include mono C 6-10 cycloalkyl trihalo silanes such as cyclohexyl trihalosilane) and monoaryl trihalo silanes (mono C 6-10 aryl trihalo silanes such as phenyl trichlorosilane, tolyl dichlorosilane, and xylyl trichlorosilane). A trihalosilane compound can be used individually or in combination of 2 or more types.
(4)テトラハロシラン化合物
テトラハロシラン化合物の具体例としては、例えば、テトラクロロシラン、ジブロモジクロロシラン、テトラブロモシランなどが挙げられる。
(4) Tetrahalosilane compound Specific examples of the tetrahalosilane compound include tetrachlorosilane, dibromodichlorosilane, and tetrabromosilane.
これらのハロシラン化合物は、単独で又は二種以上組み合わせて使用できる。前記ハロシラン化合物のうち、特に、モノ乃至トリハロシラン化合物(例えば、ジアルキルモノアリールモノハロシラン、モノアルキルモノアリールジハロシラン、モノアリールトリハロシランなど)が好ましい。なお、二種以上のハロシラン化合物を組み合わせて用いる場合、それぞれの化合物の混合割合は特に制限されない。 These halosilane compounds can be used alone or in combination of two or more. Among the halosilane compounds, mono to trihalosilane compounds (for example, dialkylmonoarylmonohalosilane, monoalkylmonoaryldihalosilane, monoaryltrihalosilane, etc.) are particularly preferable. In addition, when using in combination of 2 or more types of halosilane compounds, the mixing ratio of each compound is not specifically limited.
なお、ハロシラン化合物は、高純度であるのが好ましく、例えば、使用前に蒸留して使用してもよい。 In addition, it is preferable that a halosilane compound is highly pure, for example, you may distill and use before use.
(支持電解質)
支持電解質としては、通常、過塩素酸塩、例えば、過塩素酸ナトリウム、過塩素酸リチウムなどの過塩素酸アルカリ金属;過塩素酸テトラ−n−ブチルアンモニウム、過塩素酸テトラエチルアンモニウムなどの過塩素酸テトラアルキルアンモニウムなどが挙げられる。これらの過塩素酸塩は、単独で又は二種以上組み合わせて使用してもよい。前記過塩素酸塩のうち、過塩素酸アルカリ金属(特に、過塩素酸リチウム)及び過塩素酸テトラ−n−ブチルアンモニウムが好ましい。なお、電極反応を阻害しない範囲で、慣用の支持電解質を併用してもよい。
(Supporting electrolyte)
The supporting electrolyte is usually a perchlorate, for example, an alkali metal perchlorate such as sodium perchlorate or lithium perchlorate; perchlorine such as tetra-n-butylammonium perchlorate or tetraethylammonium perchlorate. Examples include tetraalkylammonium acid. These perchlorates may be used alone or in combination of two or more. Of the perchlorates, alkali metal perchlorate (particularly lithium perchlorate) and tetra-n-butylammonium perchlorate are preferred. In addition, you may use a conventional supporting electrolyte together in the range which does not inhibit an electrode reaction.
(マグネシウムイオン源)
前記電極反応において、マグネシウムイオンは、反応触媒として機能する。マグネシウムイオン源としては、非プロトン性溶媒(特に非プロトン性極性溶媒)に溶解して、マグネシウムイオンを生成可能な化合物であれば特に制限されず、例えば、塩化マグネシウム、臭化マグネシウムなどのマグネシウムハライド、マグネシウム塩(例えば、硫酸マグネシウム、リン酸マグネシウムなどの酸素酸塩など)などが挙げられる。これらのマグネシウムイオン源は、単独で又は二種以上組み合わせて使用できる。
(Magnesium ion source)
In the electrode reaction, magnesium ions function as a reaction catalyst. The magnesium ion source is not particularly limited as long as it is a compound that can be dissolved in an aprotic solvent (particularly an aprotic polar solvent) to generate magnesium ions. For example, magnesium halides such as magnesium chloride and magnesium bromide And magnesium salts (for example, oxyacid salts such as magnesium sulfate and magnesium phosphate). These magnesium ion sources can be used alone or in combination of two or more.
(非プロトン性溶媒)
反応溶媒としては、非プロトン性溶媒が広く使用でき、例えば、エーテル類(1,4−ジオキサン、テトラヒドロフラン、テトラヒドロピラン、ジエチルエーテル、ジイソプロピルエーテル、1,2−ジメトキシエタン、ビス(2−メトキシエチル)エーテルなどの環状又は鎖状C4-6エーテル)、カーボネート類(プロピレンカーボネートなど)、ニトリル類(アセトニトリル、ベンゾニトリルなど)、アミド類(ジメチルホルムアミド、ジメチルアセトアミドなど)、スルホキシド類(ジメチルスルホキシドなど)、ハロゲン含有化合物(塩化メチレン、クロロホルム、ブロモホルム、クロロベンゼン、ブロモベンゼンなどのハロゲン化炭化水素など)、芳香族炭化水素類(ベンゼン、トルエン、キシレンなど)、脂肪族炭化水素類(例えば、ヘキサン、シクロヘキサン、オクタン、シクロオクタンなどの鎖状又は環状炭化水素類)などが挙げられる。これらの非プロトン性溶媒は、単独で又は二種以上組合わせて混合溶媒として使用できる。これらの溶媒のうち、極性溶媒(テトラヒドロフラン、1,2−ジメトキシエタンなど)を単独で又は二種以上組み合わせて用いてもよく、極性溶媒と非極性溶媒とを組み合わせてもよい。
(Aprotic solvent)
As the reaction solvent, aprotic solvents can be widely used. For example, ethers (1,4-dioxane, tetrahydrofuran, tetrahydropyran, diethyl ether, diisopropyl ether, 1,2-dimethoxyethane, bis (2-methoxyethyl) Cyclic or linear C 4-6 ether such as ether), carbonates (such as propylene carbonate), nitriles (such as acetonitrile and benzonitrile), amides (such as dimethylformamide and dimethylacetamide), sulfoxides (such as dimethyl sulfoxide) , Halogen-containing compounds (halogenated hydrocarbons such as methylene chloride, chloroform, bromoform, chlorobenzene and bromobenzene), aromatic hydrocarbons (benzene, toluene, xylene, etc.), aliphatic hydrocarbons (eg For example, chain or cyclic hydrocarbons such as hexane, cyclohexane, octane, and cyclooctane). These aprotic solvents can be used alone or in combination of two or more as a mixed solvent. Among these solvents, polar solvents (tetrahydrofuran, 1,2-dimethoxyethane, etc.) may be used alone or in combination of two or more, and a polar solvent and a nonpolar solvent may be combined.
これらの非プロトン性溶媒のうち、エーテル類(テトラヒドロフラン、1,2−ジメトキシエタン、ビス(2−メトキシエチル)エーテル、1,4−ジオキサンなど(特に、テトラヒドロフラン、1,2−ジメトキシエタン))を単独で又は二種以上組み合わせて、或いは他の溶媒と混合して用いるのが好ましい。 Among these aprotic solvents, ethers (tetrahydrofuran, 1,2-dimethoxyethane, bis (2-methoxyethyl) ether, 1,4-dioxane, etc. (especially tetrahydrofuran, 1,2-dimethoxyethane)) are used. It is preferable to use it alone or in combination of two or more or mixed with another solvent.
なお、本発明では、通常、基質のハロシラン化合物(支持電解質及びMgイオン源)をこれらの非プロトン性溶媒に溶解して電極反応に供する。また、ハロシラン化合物は、水と速やかに反応するため、使用する原料(すなわち、支持電解質、Mgイオン源、非プロトン性溶媒など)は、予め乾燥して使用するのが好ましい。 In the present invention, the substrate halosilane compound (supporting electrolyte and Mg ion source) is usually dissolved in these aprotic solvents and used for the electrode reaction. In addition, since the halosilane compound reacts rapidly with water, it is preferable that the raw materials to be used (that is, the supporting electrolyte, the Mg ion source, the aprotic solvent, etc.) are dried before use.
(各成分の割合)
原料混合物(反応液)中のハロシラン化合物の濃度(基質濃度)は、通常、0.05〜20mol/l程度、好ましくは0.1〜15mol/l程度、さらに好ましくは0.2〜5mol/l程度である。基質濃度が低すぎると、電流効率が低下する虞があり、高すぎると支持電解質が溶解しない虞がある。
(Ratio of each component)
The concentration (substrate concentration) of the halosilane compound in the raw material mixture (reaction solution) is usually about 0.05 to 20 mol / l, preferably about 0.1 to 15 mol / l, more preferably 0.2 to 5 mol / l. Degree. If the substrate concentration is too low, the current efficiency may be reduced, and if it is too high, the supporting electrolyte may not be dissolved.
反応液中の支持電解質の濃度は、通常、0.05〜4mol/l程度の範囲から選択でき、好ましくは0.1〜3mol/l程度、さらに好ましくは0.15〜1mol/l程度である。支持電解質の濃度が低すぎると、原料混合物に供与できるイオン導電性が低すぎて、反応が十分に進行しなくなる虞がある。また、前記濃度が高すぎると、反応液中で支持電解質が結晶化し、析出する虞がある。 The concentration of the supporting electrolyte in the reaction solution can usually be selected from the range of about 0.05 to 4 mol / l, preferably about 0.1 to 3 mol / l, more preferably about 0.15 to 1 mol / l. . If the concentration of the supporting electrolyte is too low, the ionic conductivity that can be provided to the raw material mixture is too low, and the reaction may not proceed sufficiently. If the concentration is too high, the supporting electrolyte may crystallize and precipitate in the reaction solution.
反応液中のMg源の濃度は、通常、0.001〜0.5mol/l程度、好ましくは0.01〜0.3mol/l程度、さらに好ましくは0.05〜0.2mol/l程度である。なお、反応液中のMg源(Mgイオン)の濃度が低すぎると、反応の進行が著しく遅くなる虞があり、高すぎると反応液中で結晶化し、析出する虞がある。なお、Mgイオンの割合は、ハロシラン化合物のハロゲンに対して、例えば、1〜10当量、好ましくは1〜5当量、さらに好ましくは1〜3当量程度であってもよい。 The concentration of the Mg source in the reaction solution is usually about 0.001 to 0.5 mol / l, preferably about 0.01 to 0.3 mol / l, more preferably about 0.05 to 0.2 mol / l. is there. If the concentration of the Mg source (Mg ions) in the reaction solution is too low, the progress of the reaction may be remarkably slow, and if it is too high, it may crystallize and precipitate in the reaction solution. In addition, the ratio of Mg ion may be about 1 to 10 equivalents, preferably 1 to 5 equivalents, and more preferably about 1 to 3 equivalents with respect to the halogen of the halosilane compound.
(電極)
電極反応における陰陽極材料としては、特に制限されず、種々の導電性の電極材料、例えば、金属材料(SUS(クロム鋼)、Fe、Ni、Co、Pt、Mg、Cu、Al、Zn、Snなどの金属又は合金など)、炭素材料などが使用できる。これらの材料から、適宜選択して、陰極材料と陽極材料とを決定できる。これらの材料のうち、少なくとも陽極材料として、通電により非消耗性又は非溶出性の材料(SUS、Ptなどの金属材料;炭素材料など)を用いるのが好ましい。陽極及び陰極は、同種の材料で形成してもよく、異種の材料で形成してもよい。陽極材料と陰極材料との組合せとしては、例えば、(i)Mg(陽極)と、Mg、Cu、Zn、Sn、Al、Ni、Co又は炭素材料(陰極)との組合せ、(ii)Cu又はAl(陽極)と、Mg、Cu、Al、Ni、Co又はPt(陰極)との組合せ、(iii)SUS同士の組合せ、(iv)炭素材料同士の組合せ、(v)Pt同士の組合せなどが挙げられる。炭素電極としては、人造黒鉛電極、天然黒鉛電極、自焼成電極及び炭素質電極などが使用できるが、通常、黒鉛電極を使用する場合が多い。
(electrode)
The negative anode material in the electrode reaction is not particularly limited, and various conductive electrode materials such as metal materials (SUS (chromium steel), Fe, Ni, Co, Pt, Mg, Cu, Al, Zn, Sn). Etc.), carbon materials, etc. can be used. The cathode material and the anode material can be determined by appropriately selecting from these materials. Of these materials, it is preferable to use at least an anode material that is non-consumable or non-eluting by electricity (a metal material such as SUS or Pt; a carbon material). The anode and the cathode may be formed of the same material or different materials. As a combination of the anode material and the cathode material, for example, (i) a combination of Mg (anode) and Mg, Cu, Zn, Sn, Al, Ni, Co, or a carbon material (cathode), (ii) Cu or Combinations of Al (anode) and Mg, Cu, Al, Ni, Co or Pt (cathode), (iii) combinations of SUS, (iv) combinations of carbon materials, (v) combinations of Pt, etc. Can be mentioned. As the carbon electrode, an artificial graphite electrode, a natural graphite electrode, a self-fired electrode, a carbonaceous electrode, or the like can be used, but usually a graphite electrode is often used.
特に、電極表面積が大きい点で、多孔質の炭素材料を用いた炭素電極(特に針状、繊維状などの形態の微細炭素電極)を少なくとも陽極(通常、陽陰極の双方)として用いてもよい。 In particular, a carbon electrode using a porous carbon material (particularly a fine carbon electrode in the form of needles, fibers, etc.) may be used as at least an anode (usually both positive and negative cathodes) because of its large electrode surface area. .
陽極材料としては、従来、Mg又はMg合金などの酸化され易い材料を使用する必要があったが、本発明では、Mgイオンを反応液に含有させることにより、陽極の選択の幅を広げることができる。また、通電により非消耗性の陽極を用いることもできるため、流通系であっても、電極反応を効率よく行うことができ、ポリシランを製造できる。 Conventionally, it has been necessary to use an easily oxidized material such as Mg or Mg alloy as the anode material. However, in the present invention, by adding Mg ions to the reaction solution, the selection range of the anode can be expanded. it can. In addition, since a non-consumable anode can be used by energization, the electrode reaction can be efficiently performed even in a flow system, and polysilane can be produced.
本発明において、電極の形状は、特に制限されず、棒状、板状(円盤状、方盤状など)、薄膜状、筒状、コイル状、針状、又は繊維状などの形状であってもよい。 In the present invention, the shape of the electrode is not particularly limited, and may be a rod shape, plate shape (disk shape, disk shape, etc.), thin film shape, cylindrical shape, coil shape, needle shape, or fiber shape. Good.
なお、酸化被膜が形成されやすい電極では、材料に適した除去方法などにより、通常、酸化被膜を除去してから電極反応に使用する。金属材料で形成された電極では、酸化被膜の除去は、例えば、酸を用いて電極を洗浄及び乾燥する方法、不活性ガス雰囲気下で電極を研磨する方法、又はこれらを組み合わせた方法などにより行うことができる。 In the case of an electrode on which an oxide film is easily formed, the oxide film is usually removed and used for the electrode reaction by a removal method suitable for the material. In the case of an electrode formed of a metal material, the oxide film is removed by, for example, a method of cleaning and drying the electrode with an acid, a method of polishing the electrode in an inert gas atmosphere, or a combination of these. be able to.
(反応器)
本発明では、流通式の反応器を用いて、連続的に電極反応を行うことにより、ポリシランを製造できる。そのため、通電によりジュール熱が発生しても、効率よく除去して、反応温度を容易に制御することができ、分子量分布にバラツキの少ないポリシランを得ることができる。
(Reactor)
In the present invention, polysilane can be produced by continuously performing an electrode reaction using a flow reactor. Therefore, even if Joule heat is generated by energization, it can be efficiently removed, the reaction temperature can be easily controlled, and polysilane with little variation in molecular weight distribution can be obtained.
なお、ハロシランからポリシランへの反応は、電極上で進行する。そのため、反応効率の点から、本発明では、通常、流通式のマイクロリアクターを用いる。 The reaction from halosilane to polysilane proceeds on the electrode. Therefore, from the viewpoint of reaction efficiency, a flow-type microreactor is usually used in the present invention.
マイクロリアクターの流路の形状は、特に制限されず、直管状であってもよく、少なくとも一部が湾曲した管状であってもよい。流路は、蛇行していてもよい。また、流路の断面形状は、円形、楕円形、方形などの多角形状のいずれであってもよい。反応液を電極に対して効率よく接触させるため、マイクロリアクターでは、通常、断面方形状の管状流路を陽極と陰極との間に挟持させる場合が多い。そして、反応液と電極との接触効率の点で、前記流路は、マイクロリアクター内で電極と接触した状態で蛇行している場合が多い。 The shape of the flow path of the microreactor is not particularly limited, and may be a straight tubular shape or a tubular shape that is at least partially curved. The flow path may meander. The cross-sectional shape of the flow path may be any of a polygonal shape such as a circle, an ellipse, and a square. In order to efficiently bring the reaction liquid into contact with the electrode, in a microreactor, a tubular channel having a rectangular cross section is usually sandwiched between an anode and a cathode in many cases. In terms of the contact efficiency between the reaction solution and the electrode, the flow path often meanders while being in contact with the electrode in the microreactor.
流路の平均内径は、特に制限されず、例えば、1〜10mm、好ましくは1.2〜5mm、さらに好ましくは1.5〜3mm程度である。 The average inner diameter of the flow path is not particularly limited, and is, for example, about 1 to 10 mm, preferably about 1.2 to 5 mm, and more preferably about 1.5 to 3 mm.
電極反応は、マイクロリアクターの電極間に、反応液(原料混合物)を一定の空間速度(SV)で流通しつつ、直流電流を通電することにより行う。空間速度は、1〜10h-1程度、好ましくは2〜8h-1程度、さらに好ましくは3〜7h-1程度であってもよい。なお、反応液流通の空間速度(SV)が遅すぎると、電極反応の進行に比して原料の供給が不足し、生産量が低下する虞があり、速すぎると反応収率が低下する虞がある。 The electrode reaction is performed by passing a direct current between the electrodes of the microreactor while flowing the reaction solution (raw material mixture) at a constant space velocity (SV). The space velocity may be about 1 to 10 h −1 , preferably about 2 to 8 h −1 , more preferably about 3 to 7 h −1 . If the space velocity (SV) of the reaction liquid circulation is too slow, there is a risk that the supply of raw materials will be insufficient compared with the progress of the electrode reaction, resulting in a decrease in production, and if it is too fast, the reaction yield may be decreased. There is.
通電量は、原料中のハロゲン原子1モルに対して、例えば、0.1〜5F程度、好ましくは0.5〜3F程度であってもよく、通常、1F以上であればよい。なお、通電量を調整することによりポリシランの分子量を制御することができる。 The energization amount may be, for example, about 0.1 to 5F, preferably about 0.5 to 3F, and usually 1F or more with respect to 1 mol of the halogen atom in the raw material. Note that the molecular weight of the polysilane can be controlled by adjusting the energization amount.
なお、必要により、電極の極性を適宜切り替えてもよい。切り替えは、一定時間毎に定期的に行ってもよく、不定期に行ってもよい。電極の極性を切り替えることにより、通電により電極表面に被膜が生じて電気抵抗が大きくなるのを防止又は軽減することもできる。 If necessary, the polarity of the electrodes may be switched as appropriate. Switching may be performed regularly at regular intervals or irregularly. By switching the polarity of the electrodes, it is possible to prevent or reduce the occurrence of a film on the electrode surface due to energization and the increase in electrical resistance.
反応温度は、使用する非プロトン性溶媒の沸点以下であれば特に制限されず、例えば、0〜150℃、好ましくは5〜100℃、さらに好ましくは10〜80℃程度であってもよい。なお、反応温度によって、ポリシランの分子量が変化するため、反応中の温度変化を小さく(例えば、±5℃以内に)するのが好ましい。反応温度の調節は、例えば、原料混合物の温度及び供給量、供給速度、生成物を含む反応液の流出速度などを調整することにより行ってもよく、必要により、反応器内の反応液を冷却することにより行ってもよい。なお、フロー式マイクロリアクターを用いると、電極間の距離が通常の電解槽に比較して狭く、ジュール熱の発生が抑制されるため、効率よく冷却することが可能であり、温度制御が容易である。 The reaction temperature is not particularly limited as long as it is not higher than the boiling point of the aprotic solvent to be used, and may be, for example, 0 to 150 ° C, preferably 5 to 100 ° C, more preferably about 10 to 80 ° C. Since the molecular weight of polysilane changes depending on the reaction temperature, it is preferable to reduce the temperature change during the reaction (for example, within ± 5 ° C.). The reaction temperature may be adjusted, for example, by adjusting the temperature and supply amount of the raw material mixture, the supply rate, the outflow rate of the reaction solution containing the product, and the reaction solution in the reactor may be cooled if necessary. It may be done by doing. If a flow type microreactor is used, the distance between the electrodes is narrow compared to a normal electrolytic cell, and the generation of Joule heat is suppressed, so that it is possible to cool efficiently and temperature control is easy. is there.
反応は、通常、不活性ガス(ヘリウム、窒素、アルゴンなど)雰囲気下で行う場合が多い。また、反応は乾燥雰囲気で行うのが好ましい。反応は、加圧又は減圧下で行ってもよいが、通常、常圧で行う。 In many cases, the reaction is usually performed in an atmosphere of an inert gas (such as helium, nitrogen, or argon). The reaction is preferably performed in a dry atmosphere. The reaction may be performed under pressure or reduced pressure, but is usually performed at normal pressure.
なお、反応を促進するため、反応器中の反応液を適宜撹拌してもよい。撹拌は、機械的な撹拌手段などにより行ってもよく、超音波などにより行ってもよい。 In addition, in order to accelerate | stimulate reaction, you may stir the reaction liquid in a reactor suitably. Stirring may be performed by mechanical stirring means or the like, or may be performed by ultrasonic waves.
(ポリシラン)
本発明の製造方法により得られるポリシランの重合形態は、特に限定されず、ランダム又はブロックコポリマーであってもよい。ブロックコポリマーは、例えば、ジハロシラン化合物(2)のオリゴマー又は重合体(特に、ジハロシラン単位の繰り返し数が多いオリゴマー又は重合体)を用いることにより得ることができる。また、ジハロシラン化合物(2)をモノマーとして用いるか、またはジハロシラン単位の繰り返し数が小さなオリゴマーなどを用いると、ランダムコポリマーを得ることができる。さらに、ハロシラン化合物(3)及び/又はハロシラン化合物(4)を用いると、架橋構造を有するポリシランを得ることができる。また、モノハロシラン化合物(1)同士を反応させると、ジシランを得ることができる。
(Polysilane)
The polymerization form of the polysilane obtained by the production method of the present invention is not particularly limited, and may be a random or block copolymer. The block copolymer can be obtained, for example, by using an oligomer or polymer of the dihalosilane compound (2) (particularly an oligomer or polymer having a large number of repeating dihalosilane units). Further, when the dihalosilane compound (2) is used as a monomer, or an oligomer having a small number of dihalosilane units is used, a random copolymer can be obtained. Furthermore, when the halosilane compound (3) and / or the halosilane compound (4) is used, a polysilane having a crosslinked structure can be obtained. Further, when the monohalosilane compound (1) is reacted with each other, disilane can be obtained.
ポリシランの重合度又は平均重合度は、例えば、2〜1000、好ましくは5〜500、さらに好ましくは10〜300程度であってもよい。 The degree of polymerization or the average degree of polymerization of the polysilane may be, for example, 2 to 1000, preferably 5 to 500, and more preferably about 10 to 300.
ポリシランは、例えば、500〜20,000、好ましくは500〜15,000(例えば、1,000〜10,000)、さらに好ましくは2,000〜8,000(例えば、3,000〜7,000)程度の重量平均分子量を有していてもよい。また、ポリシランの重量平均分子量(Mw)と数平均分子量(Mn)との比は、Mw/Mn=1〜2、好ましくは1.1〜1.8、さらに好ましくは1.1〜1.7程度であってもよい。 The polysilane is, for example, 500 to 20,000, preferably 500 to 15,000 (for example, 1,000 to 10,000), more preferably 2,000 to 8,000 (for example, 3,000 to 7,000). It may have a weight average molecular weight of about). The ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mn) of the polysilane is Mw / Mn = 1 to 2, preferably 1.1 to 1.8, more preferably 1.1 to 1.7. It may be a degree.
本発明の方法により得られるポリシランは、分子量分布にバラツキが少なく、高品質であるため、種々の用途、例えば、セラミックス前駆体、光電子材料(例えば、フォトレジスト、有機感光体などの光電子写真材料、光導波路などの光伝送材料、光メモリなどの光記録材料、エレクトロルミネッセンス素子用材料など)の他、難燃剤、撥水剤、離型剤などとしても利用できる。 Since the polysilane obtained by the method of the present invention has a high molecular quality with little variation in molecular weight distribution, various applications such as ceramic precursors, photoelectron materials (for example, photoelectrophotographic materials such as photoresists and organic photoreceptors, In addition to an optical transmission material such as an optical waveguide, an optical recording material such as an optical memory, and a material for an electroluminescence element, it can also be used as a flame retardant, a water repellent, a release agent, and the like.
以下に、実施例に基づいて本発明をより詳細に説明するが、本発明はこれらの実施例によって限定されるものではない。 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.
実施例1
陽極としてMg電極、陰極として炭素繊維電極を取り付けたマイクロフローセル(セル容量0.2ml)に、乾燥窒素ガス雰囲気下、過塩素酸リチウム1g、塩化マグネシウム0.06g、メチルフェニルジクロロシラン0.96g、及び乾燥テトラヒドロフラン(THF)10mlの混合溶液を、1ml/hの流速で流通させるとともに、温度25℃及び大気圧にて、陰陽極間に50mAの直流電流を通電することによりポリシランを合成した。
Example 1
In a micro flow cell (cell capacity 0.2 ml) equipped with an Mg electrode as an anode and a carbon fiber electrode as a cathode, 1 g of lithium perchlorate, 0.06 g of magnesium chloride, 0.96 g of methylphenyldichlorosilane in a dry nitrogen gas atmosphere, Then, a mixed solution of 10 ml of dry tetrahydrofuran (THF) was passed at a flow rate of 1 ml / h, and a polysilane was synthesized by passing a direct current of 50 mA between the negative and positive electrodes at a temperature of 25 ° C. and atmospheric pressure.
マイクロフローセルから排出された反応液をゲルパーミエーションクロマトグラフィー(GPC)で分析したところ、重量平均分子量Mw8500のポリシランが転化率95%で得られた。また、重量平均分子量Mwと数平均分子量Mnとの比は、Mw/Mn=1.6であった。 When the reaction solution discharged from the micro flow cell was analyzed by gel permeation chromatography (GPC), polysilane having a weight average molecular weight Mw of 8500 was obtained at a conversion rate of 95%. The ratio of the weight average molecular weight Mw to the number average molecular weight Mn was Mw / Mn = 1.6.
実施例2
メチルフェニルジクロロシラン0.96gに代えて、メチルフェニルジクロロシラン0.48g及びフェニルトリクロロシラン0.35gの混合物を用いる以外は、実施例1と同様にポリシランを合成し、反応液の分析を行った。その結果、重量平均分子量4300のポリシランが転化率83%で得られた。
Example 2
Polysilane was synthesized in the same manner as in Example 1 except that a mixture of methyl phenyldichlorosilane 0.48 g and phenyltrichlorosilane 0.35 g was used instead of 0.96 g of methylphenyldichlorosilane, and the reaction solution was analyzed. . As a result, polysilane having a weight average molecular weight of 4300 was obtained at a conversion rate of 83%.
実施例3
メチルフェニルジクロロシラン0.96gに代えて、クロロジメチルフェニルシラン1.71gを用いる以外は、実施例1と同様にポリシランを合成し、反応液の分析を行った。その結果、1,2−ジフェニル−1,1,2,2−テトラメチルジシランが転化率85%で得られた。
Example 3
Polysilane was synthesized in the same manner as in Example 1 except that 1.71 g of chlorodimethylphenylsilane was used instead of 0.96 g of methylphenyldichlorosilane, and the reaction solution was analyzed. As a result, 1,2-diphenyl-1,1,2,2-tetramethyldisilane was obtained at a conversion rate of 85%.
実施例4
陰陽極ともに炭素繊維電極を用い、塩化マグネシウムを0.6g使用する以外は、実施例1と同様にポリシランを合成し、反応液の分析を行った。その結果、重合平均分子量4800のポリシランが転化率90%で得られた。
Example 4
Polysilane was synthesized in the same manner as in Example 1 except that a carbon fiber electrode was used for both the negative and positive electrodes, and 0.6 g of magnesium chloride was used, and the reaction solution was analyzed. As a result, polysilane having a polymerization average molecular weight of 4800 was obtained at a conversion rate of 90%.
比較例1
三方コック及びMg電極(1cm×1cm×5cm;希硫酸で洗浄後、エタノール及びエーテルで洗浄し、減圧乾燥し、窒素雰囲気下で研磨することにより、表面の酸化被膜を除去した)2個を装着した内容積30mlの三ツ口フラスコ(反応器)に無水過塩素酸リチウム0.64gを収容し、加熱減圧して、50℃、1mmHg(133.3Pa)で6時間保持し、過塩素酸リチウムを乾燥させた。脱酸素した乾燥窒素を反応器内に導入し、予めナトリウム−ベンゾフェノンケチルで乾燥したテトラヒドロフラン15mlを加えた。この混合物に、予め水素化カルシウムにより乾燥し、蒸留したメチルフェニルジクロロシラン0.97mlをシリンジで加え、反応器を水浴上で室温に保持しつつ、定電圧電源により通電した。通電は、コミュテーターを用いて、2つの電極の極性を1分毎に変換しつつ、メチルフェニルジクロロシラン中の塩素を基準として5.4F/molの通電量となるように約96時間かけて行った。
Comparative Example 1
Equipped with three-way cock and two Mg electrodes (1 cm x 1 cm x 5 cm; washed with dilute sulfuric acid, then washed with ethanol and ether, dried under reduced pressure, and polished in a nitrogen atmosphere to remove the oxide film on the surface) In a three-necked flask (reactor) with an internal volume of 30 ml, 0.64 g of anhydrous lithium perchlorate was placed, heated and decompressed, and held at 50 ° C. and 1 mmHg (133.3 Pa) for 6 hours to dry the lithium perchlorate. I let you. Deoxygenated dry nitrogen was introduced into the reactor, and 15 ml of tetrahydrofuran previously dried with sodium-benzophenone ketyl was added. To this mixture, 0.97 ml of methylphenyldichlorosilane previously dried with calcium hydride and distilled was added with a syringe, and the reactor was kept at room temperature on a water bath and energized with a constant voltage power source. The energization takes about 96 hours so that the energization amount is 5.4 F / mol based on the chlorine in methylphenyldichlorosilane while converting the polarity of the two electrodes every minute using a commutator. went.
反応終了後、反応溶液に1N(1mol/l)塩酸150mlを加えた後、エーテルで抽出し、貧溶媒2−プロパノール及び良溶媒テトラヒドロフランで生成物を再沈させたところ、重量平均分子量Mw5540のポリシランが得られた。また、重量平均分子量Mwと数平均分子量Mnとの比は、Mw/Mn=2.5であった。 After completion of the reaction, 150 ml of 1N (1 mol / l) hydrochloric acid was added to the reaction solution, followed by extraction with ether and reprecipitation of the product with a poor solvent 2-propanol and a good solvent tetrahydrofuran to obtain a polysilane having a weight average molecular weight Mw5540. was gotten. The ratio of the weight average molecular weight Mw to the number average molecular weight Mn was Mw / Mn = 2.5.
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JPH02105825A (en) * | 1988-10-14 | 1990-04-18 | Nippon Carbon Co Ltd | Synthesis of polysilane |
JPH05247218A (en) * | 1992-03-10 | 1993-09-24 | Tatsuya Shono | Production of network polymer having si-si skeleton |
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