JP4659112B1 - Joining device - Google Patents

Abstract

An object of the present invention is to more reliably hold an object to be joined.
An electrostatic chuck 18 and an activation device are provided. The electrostatic chuck 18 holds the bonding target 7 by applying a voltage to the internal electrodes 22-1 to 22-2 via the terminals 23-1 to 23-2. The activation device irradiates particles on the surface of the joining object 7 held by the electrostatic chuck 18. The terminals 23-1 to 23-2 are arranged in a region of the surface of the electrostatic chuck 18 where the particles are not irradiated. Such a bonding apparatus can prevent the thin film of the conductor formed by the long-time irradiation of the particles from being formed in the vicinity of the terminals 23-1 to 23-2, and the internal electrodes 22-1 to 22-22. -2 can be prevented from occurring due to the voltage applied to -2, and the electrostatic chuck 18 can hold the joining object 7 more reliably.
[Selection] Figure 2

Description

  The present invention relates to a joining device, and more particularly to a joining device used when joining objects to be joined.

  A MEMS (Micro Electro Mechanical Systems) in which fine electrical parts and mechanical parts are integrated is known. Examples of the MEMS include a micromachine, a pressure sensor, and a micro motor. A bonding method is known in which a plurality of such devices are formed on a bonded wafer by bonding two wafers on which a plurality of patterns are formed to a single bonded wafer. The bonding method includes a step of irradiating particles on the surfaces of the two wafers and a step of pressing the surfaces activated by the particles together. A bonding apparatus that performs such a bonding method is desired to be improved in mass productivity and reliability, and it is desired to hold the wafer more reliably.

  Japanese Patent Application Laid-Open No. 2007-281203 discloses a bonding method capable of obtaining a large bonding strength regardless of the material of the bonding surface of an object to be bonded such as a wafer. The bonding method is a bonding method in which two objects to be bonded are bonded to each other, and a sputter etching is performed by irradiating the bonding surface of both objects to be bonded with an ion beam or an atom beam in a vacuum at room temperature, and at the same time A film forming material for bonding is sputtered by a beam or an atomic beam to form a thin film on the bonding surface of at least one object to be bonded, and then the bonding surfaces are overlapped.

  Japanese Patent Application Laid-Open No. 06-99317 discloses a joining method for joining at a low temperature without applying a large pressure to the materials to be joined. In the bonding method, after irradiating two bonding surfaces with a particle beam in an ultra-high purity atmosphere, again, one of the bonding surfaces is sputtered with the particle beam to form an ultrafine particle film on the other bonding surface. It is characterized in that it is formed and bonded by applying a slight pressure to the two bonding surfaces.

  Japanese Patent No. 3848899 discloses a substrate bonding method capable of bonding substrates made of ionic crystals or the like, which have been difficult to perform surface activated bonding, by processing at a low temperature. The substrate bonding method is a substrate bonding method in which a plurality of substrates are bonded to each other, and an inert gas ion beam or an inert gas neutral atom beam and a metal ion beam or metal Simultaneously irradiating with a neutral atom beam, the substrate surface is scraped off by the inert gas ion beam or inert gas neutral atom beam, and metal atoms are deposited by the metal ion beam or metal neutral atom beam. Due to the balance with the operation, a step of forming a metal thin film having a thickness of 1 nm to 10 nm on the bonding surface of each substrate and the surfaces of the substrates using the metal thin film as a medium by overlapping the bonding surfaces of the substrates And activating bonding.

  Japanese Patent No. 4172806 discloses a room temperature bonding method in which an intermediate material is uniformly formed on a substrate surface and heating at the time of bonding is unnecessary, and sufficient bonding strength can be obtained even when bonding at room temperature. The room temperature bonding method is a method in which a plurality of substrates are bonded at room temperature via an intermediate material, and a step of physically sputtering a plurality of targets to form the intermediate material on a bonded surface of the substrate; And a step of activating the bonded surface of the substrate by physical sputtering.

JP 2007-281203 A Japanese Patent Application Laid-Open No. 06-99317 Japanese Patent No. 3848899 Japanese Patent No. 4172806

The subject of this invention is providing the joining apparatus which hold | maintains a joining target more reliably.
Another object of the present invention is to provide a joining apparatus that more reliably holds an object to be joined and is more compact.
Another object of the present invention is to provide a bonding apparatus that holds a bonding target more securely and ensures the rigidity of a chuck that holds the bonding target.

  In the following, means for solving the problems will be described using the reference numerals used in the modes and examples for carrying out the invention in parentheses. This symbol is added to clarify the correspondence between the description of the claims and the description of the modes and embodiments for carrying out the invention. Do not use to interpret the technical scope.

  The joining device (1) according to the present invention includes an electrostatic chuck (18) (30) (40) (50) (70) and terminals (23-1 to 23-2) (33-1 to 33-2) (43). -1 to 43-2) (53-1 to 53-2) (73-1 to 73-2), an activation device (14), and a bonding chamber (2). Terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43-2) (53-1 to 53-2) (73-1 to 73-2) Internal electrodes (22-1 to 22-2) (32-1 to 22-2) (42-1 to 42-2) formed inside the chuck (18) (30) (40) (50) (70) ) (52-1 to 52-2) (72-1 to 72-2). The electrostatic chucks (18), (30), (40), (50), and (70) are connected to the terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43-2) (53). -1 to 53-2) (73-1 to 73-2) through the internal electrodes (22-1 to 22-2) (32-1 to 22-2) (42-1 to 42-2) (52 -1 to 52-2) (7) is held by applying a voltage to (72-1 to 72-2). The activation device (14) irradiates the surface of the bonding target (7) held by the electrostatic chuck (18) (30) (40) (50) (70) with particles. The bonding chamber (2) forms a bonding atmosphere for bonding the bonding target (7). At this time, the terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43-2) (53-1 to 53-2) (73-1 to 73-2) are The electrostatic chucks (18), (30), (40), (50), and (70) are arranged on the surface of the surface where the particles are not irradiated. In such a bonding apparatus (1), a thin film of a conductor may be formed on the surface irradiated with the particles for a long time. In such a bonding apparatus (1), such a thin film has terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43-2) (53-1 to 53-). 2) It can prevent being formed in the vicinity of (73-1 to 73-2), and the terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43) can be prevented. -2) Internal electrodes (22-1 to 22-2) (32-1 to 22-2) (42-1 to 42) via (53-1 to 53-2) (73-1 to 73-2) -2) Prevents the occurrence of spark discharge due to the voltage applied to (52-1 to 52-2) (72-1 to 72-2), and the electrostatic chuck (18) (30) (40) ( 50) (70) can hold the joining object (7) more reliably.

  The terminals (23-1 to 23-2) (43-1 to 43-2) (53-1 to 53-2) (73-1 to 73-2) are connected to the electrostatic chuck (18) (40) (50 ) (70) is disposed on the opposite side of the surface holding the object to be joined (7). Such a joining device (1) more reliably prevents the occurrence of the spark discharge, and the electrostatic chucks (18), (40), (50), and (70) hold the joining object (7) more reliably. can do.

  The joining apparatus according to the present invention further includes press contact shafts (60) (80) for supporting the electrostatic chucks (50) (70). Terminals (53-1 to 53-2) (73-1 to 73-2) are holes (61-1 to 61-2) (81-1 to 81-) formed in the pressure contact shafts (60) and (80). 2). Such a joining apparatus can further ensure the rigidity of the electrostatic chucks (18) (30) (40) (50) (70) and is compact.

  The joining device according to the present invention further includes coverings (54-1 to 54-2) covering the terminals (53-1 to 53-2). Such a joining apparatus more reliably prevents the occurrence of a spark discharge between the terminals (53-1 to 53-2) and the pressure contact shaft (60), and the electrostatic chuck (50) is to be joined ( 7) can be held more reliably.

  The joining device according to the present invention further includes insulators (82-1 to 82-2) covering the inner walls of the holes (81-1 to 81-2). Such a joining apparatus more reliably prevents the occurrence of spark discharge between the terminals (73-1 to 73-2) and the pressure contact shaft (80), and the electrostatic chuck (70) is to be joined ( 7) can be held more reliably.

  The joining device according to the present invention includes terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43-2) (53-1 to 53-2) (73-1 to 73). -2) is further provided with shields (34-1 to 34-2) (44-1 to 44-2) (60) and (80) that shield the particles from the particles. In such a bonding apparatus (1), such a thin film has terminals (23-1 to 23-2) (33-1 to 33-2) (43-1 to 43-2) (53-1 to 53-). 2) It can prevent more reliably forming in the vicinity of (73-1 to 73-2), and the terminals (23-1 to 23-2) (33-1 to 33-2) (43-). 1-43) (53-1 to 53-2) (73-1 to 73-2) through the internal electrodes (22-1 to 22-2) (32-1 to 22-2) (42- 1-4-2) (52-1 to 52-2) (72-1 to 72-2) is prevented from generating a spark discharge due to the voltage applied thereto, and the electrostatic chuck (30) (40) ( 50) (70) can hold the joining object (7) more reliably.

  The bonding apparatus according to the present invention can prevent the thin film of the conductor from being formed in the vicinity of the terminal, prevents the occurrence of spark discharge due to the voltage for holding the bonding target, and the chuck is to be bonded. Can be held more reliably.

FIG. 1 is a block diagram showing an embodiment of a joining system. FIG. 2 is a cross-sectional view showing the electrostatic chuck. FIG. 3 is a graph showing the relationship between the product of gas pressure, electrode spacing, and spark voltage. FIG. 4 is a cross-sectional view showing another electrostatic chuck. FIG. 5 is a sectional view showing still another electrostatic chuck. FIG. 6 is a cross-sectional view showing still another electrostatic chuck. FIG. 7 is a sectional view showing still another electrostatic chuck.

  Embodiments of a joining apparatus according to the present invention will be described with reference to the drawings. The joining device 1 is applied to a joining system as shown in FIG. That is, the joining system includes the joining device control device 10 and the joining device 1. The bonding apparatus 1 includes a bonding chamber 2 and a load lock chamber 3. The joining chamber 2 and the load lock chamber 3 are containers that seal the inside from the environment. The bonding apparatus 1 further includes a gate valve 5. The gate valve 5 is interposed between the bonding chamber 2 and the load lock chamber 3. The gate valve 5 is controlled by the bonding apparatus control device 10 to close or open the gate that connects the inside of the bonding chamber 2 and the inside of the load lock chamber 3. The load lock chamber 3 includes a lid (not shown). The lid closes the gate connecting the outside and the inside of the load lock chamber 3 or opens the gate.

  The load lock chamber 3 includes a vacuum pump 4. The vacuum pump 4 exhausts gas from the inside of the load lock chamber 3 by being controlled by the bonding device control device 10. Examples of the vacuum pump 4 include a turbo molecular pump, a cryopump, and an oil diffusion pump. The load lock chamber 3 further includes a transport mechanism 6 therein. The transfer mechanism 6 is controlled by the bonding apparatus control device 10 to transfer the wafer disposed inside the load lock chamber 3 to the bonding chamber 2 via the gate valve 5 or via the gate valve 5. The wafer placed in the bonding chamber 2 is transferred into the load lock chamber 3.

  The bonding chamber 2 includes a vacuum pump 9. The vacuum pump 9 exhausts gas from the inside of the bonding chamber 2 by being controlled by the bonding apparatus control device 10. Examples of the vacuum pump 9 include a turbo molecular pump, a cryopump, and an oil diffusion pump.

  The bonding chamber 2 further includes an alignment mechanism 12. The alignment mechanism 12 holds the cartridge 16 inside the bonding chamber 2, and supports the cartridge 16 so as to be movable in parallel in the horizontal direction and to be rotatable around a rotation axis parallel to the vertical direction. The cartridge 16 is formed in a generally disc shape and is used for mounting the upper wafer 7 or the lower wafer 8. The alignment mechanism 12 is further controlled by the joining device control device 10 so that the cartridge 16 translates horizontally or the cartridge 16 rotates about a rotation axis parallel to the vertical direction. Then, the cartridge 16 is driven.

  The bonding chamber 2 further includes a pressure contact mechanism 11, a pressure contact shaft 17, an electrostatic chuck 18, and a load meter 19. The press contact shaft 17 is supported so as to be movable in the vertical direction with respect to the bonding chamber 2. The electrostatic chuck 18 is disposed at the lower end of the press contact shaft 17 and includes a dielectric layer on a surface facing the alignment mechanism 12. The electrostatic chuck 18 is controlled by the bonding apparatus controller 10 to hold the upper wafer 7 by electrostatic force. The pressure contact mechanism 11 is controlled by the bonding apparatus control device 10 to translate the pressure contact shaft 17 in the vertical direction with respect to the bonding chamber 2. The pressure contact mechanism 11 further measures the position where the electrostatic chuck 18 is disposed, and outputs the position to the bonding apparatus control device 10. The load meter 19 measures the load applied to the press contact shaft 17 to measure the load applied to the wafer held by the electrostatic chuck 18 and outputs the load to the bonding apparatus control device 10.

  The bonding chamber 2 further includes an ion gun 14 and an electron source 15. The ion gun 14 is disposed so as to face the space between the alignment mechanism 12 and the electrostatic chuck 18 when the electrostatic chuck 18 is disposed above. The ion gun 14 is controlled by the bonding apparatus control device 10, thereby passing argon ions along the irradiation axis passing through the space between the alignment mechanism 12 and the electrostatic chuck 18 and intersecting the inner surface of the bonding chamber 2. Is accelerated and released. The ion gun 14 further includes a metal target (not shown). The metal target is disposed at a position where the argon ions are irradiated. Similar to the ion gun 14, the electron source 15 is disposed so as to face the space between the alignment mechanism 12 and the electrostatic chuck 18. The electron source 15 is controlled by the bonding apparatus control device 10, thereby passing through the space between the alignment mechanism 12 and the electrostatic chuck 18 and along another irradiation axis that intersects the inner surface of the bonding chamber 2. , Accelerating and releasing electrons.

  The upper wafer 7 is formed with a plurality of rectangular regions having the same shape. The lower wafer 8 is formed with a plurality of rectangular areas corresponding to the plurality of rectangular areas formed on the upper wafer 7. The plurality of rectangular regions of the lower wafer 8 are formed so as to be bonded to the plurality of rectangular regions of the upper wafer 7 when the upper wafer 7 and the lower wafer 8 are bonded as designed. The lower wafer 8 is formed so as to be formed in a plurality of devices by being bonded to the upper wafer 7 as designed and then cut into a plurality of rectangular regions.

  Each of the plurality of devices is formed with a hermetically sealed space, and a predetermined degree of vacuum is required for the pressure in the space. Examples of such a device include a micromachine, a pressure sensor, and a micro motor. For example, the lower wafer 8 has a partition wall portion and a cantilever portion formed in each of the plurality of rectangular regions. The partition wall part is bonded to a part of the upper wafer 7 when the lower wafer 8 is formed in the device, and forms a part of the partition wall that isolates the hermetically sealed space from the environment together with the part. is doing. The cantilever portion is formed such that when the lower wafer 8 is formed in the device, the cantilever portion is disposed in the hermetically sealed space and can vibrate in the space.

  FIG. 2 shows the electrostatic chuck 18. The electrostatic chuck 18 includes a main body portion 21, a plurality of internal electrodes 22-1 to 22-2, a plurality of terminals 23-1 to 23-2, a wiring 25, and a power supply device 26. The main body portion 21 is made of ceramic and has a flat surface for holding the upper wafer 7. The plurality of internal electrodes 22-1 to 22-2 are formed of a conductor and are disposed inside the main body portion 21. The plurality of terminals 23-1 to 23-2 are each formed of a conductor. Each of the plurality of terminals 23-1 to 23-2 is arranged inside the main body portion 21, and the other part is directly connected to argon ions emitted from the ion gun 14 on the surface of the main body portion 21. It arrange | positions so that it may expose from the area | region which is not irradiated. That is, each of the plurality of terminals 23-1 to 23-2 is arranged such that a part thereof is exposed from the surface opposite to the surface that holds the upper wafer 7 of the main body portion 21. Each terminal 23-i (i = 1, 2) of the plurality of terminals 23-1 to 23-2 is further electrically connected to the internal electrode 22-i. The wiring 25 electrically connects the plurality of terminals 23-1 to 23-2 to the power supply device 26. The power supply device 26 is disposed outside the bonding chamber 2. The power supply device 26 is controlled by the bonding device control device 10 to apply a predetermined voltage to the plurality of internal electrodes 22-1 to 22-2 via the plurality of terminals 23-1 to 23-2 and the wiring 25. Apply.

  First, after the gate valve 5 is closed, the bonding apparatus control apparatus 10 generates a vacuum atmosphere inside the bonding chamber 2 using the vacuum pump 9 and generates an atmospheric pressure atmosphere inside the load lock chamber 3. The user opens the lid of the load lock chamber 3, places the two cartridges 16 inside the load lock chamber 3, and closes the lid of the load lock chamber 3. One cartridge 16 of the two cartridges 16 has the upper wafer 7 mounted thereon, and the other cartridge 16 of the two cartridges 16 has the lower wafer 8 mounted thereon. The bonding apparatus control apparatus 10 controls the vacuum pump 4 so that a vacuum atmosphere is generated inside the load lock chamber 3 after the lid of the load lock chamber 3 is closed.

  After the vacuum atmosphere is generated inside the load lock chamber 3, the bonding apparatus control apparatus 10 opens the gate valve 5, and uses the transfer mechanism 6 to place the cartridge 16 on which the upper wafer 7 is placed on the alignment mechanism 12. Deploy. The bonding apparatus control apparatus 10 controls the power supply apparatus 26 so that the electrostatic chuck 18 holds the upper wafer 7 after the cartridge 16 is arranged in the alignment mechanism 12.

  The bonding apparatus control apparatus 10 uses the transport mechanism 6 to load the cartridge 16 that has finished the function of delivering the upper wafer 7 to the electrostatic chuck 18 after the upper wafer 7 is held by the electrostatic chuck 18. To recover. After the cartridge 16 is collected in the load lock chamber 3, the bonding apparatus control apparatus 10 uses the transfer mechanism 6 to place the cartridge 16 on which the lower wafer 8 is placed on the alignment mechanism 12. After the cartridge 16 is disposed in the alignment mechanism 12, the bonding apparatus control apparatus 10 closes the gate valve 5 and generates a bonding atmosphere having a predetermined degree of vacuum inside the bonding chamber 2 using the vacuum pump 9. .

  After the bonding atmosphere is generated, the bonding apparatus control apparatus 10 emits argon ions between the upper wafer 7 and the lower wafer 8 using the ion gun 14 for a predetermined activation time. The argon ions are irradiated on the surface of the upper wafer 7 that faces the lower wafer 8, and the surface of the lower wafer 8 that faces the upper wafer 7 is irradiated. At this time, the argon ions remove oxides and the like formed on the surface of the upper wafer 7, remove impurities adhering to the surface of the upper wafer 7, and face the lower wafer 8 of the upper wafer 7. Activate the surface to do. The argon ions further remove oxides and the like formed on the surface of the lower wafer 8, remove impurities adhering to the surface of the lower wafer 8, and face the upper wafer 7 of the lower wafer 8. Activate the surface.

  The argon ions are further irradiated to a metal target included in the ion gun 14 to release metal particles into the bonding chamber 2. The metal particles form a thin film on the surface of the upper wafer 7 facing the lower wafer 8, and form a thin film on the surface of the lower wafer 8 facing the upper wafer 7. The thin film is formed of an element that forms a metal target, and strengthens the bonding between the lower wafer 8 and the upper wafer 7. The metal particles form a thin film of a conductor on the surface of an object disposed inside the bonding chamber 2 by releasing the argon ions over a long period of time. In particular, the argon ions on the surface are irradiated with the argon ions. A thin film of the conductor is formed in the region to be formed. Note that the metal target can be replaced with a metal grid. The metal grid is a metal member having an opening, and is disposed at the exit end of the ion gun 14. The metal grid emits metal particles into the bonding chamber 2 by being irradiated with the argon ions in the same manner as the metal target.

  The bonding apparatus control device 10 emits electrons between the upper wafer 7 and the lower wafer 8 using the electron source 15 while the argon ions are being emitted. The electrons are applied to the upper wafer 7 and the lower wafer 8. The upper wafer 7 and the lower wafer 8 are charged up by the irradiation of the argon ions, that is, are charged to a positive charge. The electrons neutralize the charge of the upper wafer 7 charged up by the irradiation of the argon ions, and neutralize the charge of the lower wafer 8.

  The bonding apparatus control apparatus 10 causes the electrostatic chuck 18 to descend to a predetermined position where the upper wafer 7 and the lower wafer 8 are separated by a predetermined distance after the upper wafer 7 and the lower wafer 8 are irradiated with argon ions. In addition, the pressure contact mechanism 11 is controlled. The bonding apparatus control apparatus 10 uses the alignment mechanism 12 so that the relative positions of the upper wafer 7 and the lower wafer 8 in the horizontal plane are bonded as designed after the electrostatic chuck 18 is lowered to a predetermined position. The lower wafer 8 is driven.

  The bonding apparatus control apparatus 10 controls the pressure contact mechanism 11 so that the electrostatic chuck 18 is lowered after the upper wafer 7 and the lower wafer 8 are aligned. The bonding apparatus control apparatus 10 measures the load applied to the electrostatic chuck 18 using the load meter 19 while the electrostatic chuck 18 is being lowered. The joining device control device 10 calculates a joining timing at which the load reaches the joining load, and controls the press contact mechanism 11 so that the descent of the electrostatic chuck 18 stops at the joining timing. The bonding apparatus control apparatus 10 controls the electrostatic chuck 18 so that the electrostatic chuck 18 releases the bonded wafer after a predetermined bonding time has elapsed since the descent of the electrostatic chuck 18 has stopped. The pressure contact mechanism 11 is controlled so that the chuck 18 is raised. The bonding apparatus control apparatus 10 further controls the pressure contact mechanism 11 so that the electrostatic chuck 18 rises to a predetermined position where the bonding wafer and the electrostatic chuck 18 are separated by a predetermined distance. The upper wafer 7 and the lower wafer 8 are bonded by such an operation and formed into one bonded wafer.

  After the bonded wafer is formed, the bonding apparatus control apparatus 10 opens the gate valve 5 and uses the transfer mechanism 6 to transfer the cartridge 16 on which the bonded wafer is placed into the load lock chamber 3. The joining device control device 10 closes the gate valve 5 after the cartridge 16 is transported to the load lock chamber 3.

  The bonding apparatus control apparatus 10 generates an atmospheric pressure atmosphere inside the load lock chamber 3 after the gate valve 5 is closed. After the atmospheric pressure atmosphere is generated inside the load lock chamber 3, the user opens the lid of the load lock chamber 3 and takes out the bonded wafer from the load lock chamber 3. The user cuts the bonded wafer into a plurality of rectangular regions formed on the upper wafer 7 and the lower wafer 8 to produce a plurality of devices from the bonded wafer.

  FIG. 3 shows the relationship between the product of gas pressure and electrode spacing and the spark voltage. The relationship shows that the voltage at which spark discharge occurs between parallel electrodes is a function of the product of gas pressure and electrode spacing. The relationship further indicates that the spark discharge does not occur when the voltage is less than the function. The relationship further indicates that the spark discharge does not occur when the voltage at which the spark discharge occurs is applied and the electrode interval is larger than a predetermined interval.

  By performing such an operation, the bonding apparatus 1 forms a thin film on the surface of the object disposed inside the bonding chamber 2, and in particular, the region of the surface irradiated with the argon ions A thin film is formed. The thin film is a conductor and may be formed on an electrode electrically connected to the plurality of terminals 23-1 to 23-2. Such an electrode may generate a spark discharge when a voltage is applied to the internal electrodes 22-1 to 22-2. Such spark discharge may reduce the voltage applied to the internal electrodes 22-1 to 22-2 and reduce the ability of the electrostatic chuck 18 to hold the upper wafer 7. In the bonding apparatus 1, the plurality of terminals 23-1 to 23-2 are arranged in a region of the electrostatic chuck 18 where the argon ions are not irradiated, and the thin film is electrically connected to the plurality of terminals 23-1 to 23-2. It is prevented from being connected. For this reason, the bonding apparatus 1 can prevent the spark discharge using the thin film as an electrode from occurring inside the bonding chamber 2, and can hold the upper wafer 7 on the electrostatic chuck 18 more reliably. The maintenance interval for the inside of the bonding chamber 2 can be extended. The thin film is further in electrical contact with the terminal 23-i and should be held at another potential different from the potential of the terminal 23-i (for example, the terminal 23-j (j = 1, 2; By reaching j ≠ i), the pressure contact shaft 17, and the inner wall of the bonding chamber 2, there is a possibility that the terminal 23-i and its part are short-circuited. Such a short circuit may reduce the voltage applied to the internal electrodes 22-1 to 22-2, and may reduce the ability of the electrostatic chuck 18 to hold the upper wafer 7. The bonding apparatus 1 can further prevent such a short circuit by preventing electrical connection between the thin film and the plurality of terminals 23-1 to 23-2, and as a result, the electrostatic chuck 18. Thus, the upper wafer 7 can be held more securely, and the maintenance interval inside the bonding chamber 2 can be extended.

  In another embodiment of the bonding apparatus according to the present invention, the electrostatic chuck 18 in the above-described embodiment is replaced with another electrostatic chuck. As shown in FIG. 4, the electrostatic chuck 30 includes a main body portion 31, a plurality of internal electrodes 32-1 to 32-2, and a plurality of terminals 33-1 to 33-2. A plurality of shields 34-1 to 34-2, a wiring 25, and a power supply device 26 are provided. The main body portion 31 is made of ceramic and has a flat surface for holding the upper wafer 7. The plurality of internal electrodes 32-1 to 32-2 are formed of a conductor and are disposed inside the main body portion 31. The plurality of terminals 33-1 to 33-2 are each formed of a conductor. Each of the plurality of terminals 33-1 to 33-2 is arranged inside the main body portion 31, and the other part is exposed from a region different from the surface holding the upper wafer 7 of the main body portion 31. Has been placed. Each terminal 33-i of the plurality of terminals 33-1 to 33-2 is further electrically connected to the internal electrode 32-i. Each of the plurality of shields 34-1 to 34-2 is formed of an insulator exemplified by ceramic, and is formed in a tubular shape. The shield 34-i is arranged so that the terminal 33-i is arranged inside the tube, and the argon ion emitted from the ion gun 14 is not irradiated to the terminal 33-i from the argon ion to the terminal 33. -I is shielded. The wiring 25 electrically connects the plurality of terminals 33-1 to 33-2 to the power supply device 26. The power supply device 26 is disposed outside the bonding chamber 2. The power supply device 26 is controlled by the bonding device control device 10 to apply a predetermined voltage to the plurality of internal electrodes 32-1 to 32-2 via the plurality of terminals 33-1 to 33-2 and the wiring 25. Apply.

  In the electrostatic chuck 30, the conductive thin film formed inside the bonding chamber 2 is electrically connected to the plurality of terminals 33-1 to 33-2 in the same manner as the electrostatic chuck 18 in the above-described embodiment. Is prevented. For this reason, the joining apparatus to which the electrostatic chuck 30 is applied prevents the occurrence of spark discharge using the thin film as an electrode in the joining chamber 2 in the same manner as the joining apparatus 1 in the above-described embodiment. In addition, the upper wafer 7 can be more reliably held on the electrostatic chuck 30, and further, the interval for maintaining the inside of the bonding chamber 2 can be extended.

  In still another embodiment of the bonding apparatus according to the present invention, the electrostatic chuck 18 in the above-described embodiment is further replaced with another electrostatic chuck. As shown in FIG. 5, the electrostatic chuck 40 includes a main body portion 41, a plurality of internal electrodes 42-1 to 42-2, and a plurality of terminals 43-1 to 43-2. A plurality of shields 44-1 to 44-2, a wiring 25, and a power supply device 26 are provided. The main body portion 41 is made of ceramic and has a flat surface for holding the upper wafer 7. The plurality of internal electrodes 42-1 to 42-2 are formed of a conductor and disposed inside the main body portion 41. The plurality of terminals 43-1 to 43-2 are each formed from a conductor. Each of the plurality of terminals 43-1 to 43-2 is partially disposed inside the main body portion 41, and the other part is exposed from the surface opposite to the surface holding the upper wafer 7 of the main body portion 41. Are arranged as follows. Each terminal 43-i of the plurality of terminals 43-1 to 43-2 is further electrically connected to the internal electrode 42-i. Each of the plurality of shields 44-1 to 44-2 is formed of an insulator exemplified by ceramic, and is formed in a tubular shape. The shield 44-i is arranged so that the terminal 43-i is arranged inside the tube, and the argon ion emitted from the ion gun 14 is not irradiated to the terminal 43-i from the argon ion to the terminal 43. -I is shielded. The wiring 25 electrically connects the plurality of terminals 43-1 to 43-2 to the power supply device 26. The power supply device 26 is disposed outside the bonding chamber 2. The power supply device 26 is controlled by the bonding device control device 10 to apply a predetermined voltage to the plurality of internal electrodes 42-1 to 42-2 via the plurality of terminals 43-1 to 43-2 and the wiring 25. Apply.

  Since the electrostatic chuck 40 has a plurality of terminals 43-1 to 43-2 arranged in a region where the argon ions are not irradiated to the terminals 43-i, the electrostatic chuck 40 is compared with the electrostatic chuck 30 in the above-described embodiment. Thus, the conductive thin film formed inside the bonding chamber 2 is more reliably prevented from being electrically connected to the plurality of terminals 43-1 to 43-2. For this reason, the joining apparatus to which the electrostatic chuck 40 is applied prevents the occurrence of spark discharge using the thin film as an electrode in the joining chamber 2 in the same manner as the joining apparatus 1 in the above-described embodiment. In addition, the upper wafer 7 can be more reliably held on the electrostatic chuck 40, and further, the interval for maintaining the inside of the bonding chamber 2 can be extended.

  In still another embodiment of the bonding apparatus according to the present invention, the electrostatic chuck 18 in the above-described embodiment is further replaced with another electrostatic chuck. The pressure contact shaft 17 is replaced with another pressure contact shaft. As shown in FIG. 6, the electrostatic chuck 50 includes a main body portion 51, a plurality of internal electrodes 52-1 to 52-2, and a plurality of terminals 53-1 to 53-2. A plurality of covering bodies 54-1 to 54-2, a wiring 25, and a power supply device 26 are provided. The main body portion 51 is made of ceramic and has a flat surface for holding the upper wafer 7. The plurality of internal electrodes 52-1 to 52-2 are formed of a conductor and disposed inside the main body portion 51. The plurality of terminals 53-1 to 53-2 are each formed from a conductor. Each of the plurality of terminals 53-1 to 53-2 is disposed inside the main body portion 51, and the other part is exposed from the surface opposite to the surface holding the upper wafer 7 of the main body portion 51. Are arranged as follows. Each terminal 53-i of the plurality of terminals 53-1 to 53-2 is further electrically connected to the internal electrode 52-i. The plurality of cover bodies 54-1 to 54-2 are each formed of an insulator exemplified by a resin. The covering 54-i covers the terminal 53-i so that the terminal 53-i is not exposed to the atmosphere inside the bonding chamber 2. The wiring 25 electrically connects the plurality of terminals 53-1 to 53-2 to the power supply device 26. The power supply device 26 is disposed outside the bonding chamber 2. The power supply device 26 is controlled by the bonding device control device 10 to apply a predetermined voltage to the plurality of internal electrodes 52-1 to 52-2 via the plurality of terminals 53-1 to 53-2 and the wiring 25. Apply.

  The press contact shaft 60 has a plurality of holes 61-1 to 61-2. The pressure contact shaft 60 is joined to the surface opposite to the surface that holds the upper wafer 7 of the main body portion 51 so that the terminal 53-i is disposed inside the hole 61-i.

  In the electrostatic chuck 50, the conductive thin film formed inside the bonding chamber 2 is electrically connected to the plurality of terminals 53-1 to 53-2 as compared with the electrostatic chuck 40 in the above-described embodiment. Is more reliably prevented. For this reason, the bonding apparatus to which the electrostatic chuck 50 is applied prevents the occurrence of spark discharge using the thin film as an electrode in the bonding chamber 2 in the same manner as the bonding apparatus 1 in the above-described embodiment. In addition, the upper wafer 7 can be more reliably held on the electrostatic chuck 50, and further, the interval for maintaining the inside of the bonding chamber 2 can be extended.

  The pressure contact shaft 60 is disposed on the surface opposite to the surface on which the upper wafer 7 is held by the plurality of terminals 53-1 to 53-2 as compared to the pressure contact shaft 17 in the above-described embodiment. Can be joined to a larger area of its opposite surface. For this reason, the joining apparatus to which the press contact shaft 60 is applied can ensure the rigidity of the electrostatic chuck 50 more reliably than the joining apparatus to which the press contact shaft 17 in the above-described embodiment is applied. When the upper wafer 7 and the lower wafer 8 are bonded, a larger load can be applied to the upper wafer 7 and the lower wafer 8.

  The plurality of covering bodies 54-1 to 54-2 can be replaced with a plurality of shielding bodies. The plurality of shields are formed of an insulator and formed into a tubular shape in the same manner as the plurality of shields 44-1 to 44-2 in the above-described embodiment. Each of the shields is disposed so that the terminal 53-i is disposed inside the tube, and is disposed in the hole 61-i of the press contact shaft 60. That is, the plurality of shields shield the terminals 43-i from the argon ions so that the argon ions emitted from the ion gun 14 are not irradiated onto the terminals 53-i. Such a joining apparatus can ensure the rigidity of the electrostatic chuck 50 more reliably in the same manner as the press contact shaft 60 in the above-described embodiment, and joins the upper wafer 7 and the lower wafer 8 together. In addition, a larger load can be applied to the upper wafer 7 and the lower wafer 8.

  In still another embodiment of the bonding apparatus according to the present invention, the electrostatic chuck 18 in the above-described embodiment is further replaced with another electrostatic chuck. The pressure contact shaft 17 is replaced with another pressure contact shaft. As shown in FIG. 7, the electrostatic chuck 70 includes a main body portion 71, a plurality of internal electrodes 72-1 to 72-2, and a plurality of terminals 73-1 to 73-2. A wiring 25 and a power supply device 26 are provided. The main body portion 71 is made of ceramic and has a flat surface for holding the upper wafer 7. The plurality of internal electrodes 72-1 to 72-2 are formed of a conductor and disposed inside the main body portion 71. The plurality of terminals 73-1 to 73-2 are each formed from a conductor. Each of the plurality of terminals 73-1 to 73-2 is arranged inside the main body portion 71, and the other part is exposed from the surface opposite to the surface holding the upper wafer 7 of the main body portion 71. Are arranged as follows. Each terminal 73-i of the plurality of terminals 73-1 to 73-2 is further electrically connected to the internal electrode 72-i. The wiring 25 electrically connects the plurality of terminals 73-1 to 73-2 to the power supply device 26. The power supply device 26 is disposed outside the bonding chamber 2. The power supply device 26 is controlled by the bonding device control device 10 to apply a predetermined voltage to the plurality of internal electrodes 72-1 to 72-2 via the plurality of terminals 73-1 to 73-2 and the wiring 25. Apply.

  The press contact shaft 80 has a plurality of holes 81-1 to 81-2. The pressure contact shaft 80 includes a plurality of covering bodies 82-1 to 82-2. The plurality of covering bodies 82-1 to 82-2 are each formed of an insulator exemplified by a resin. The covering 82-i covers the inner wall of the hole 81-i. The pressure contact shaft 80 is joined to a surface opposite to the surface that holds the upper wafer 7 of the main body portion 71 so that the terminal 73-i is disposed inside the hole 81-i.

  In the electrostatic chuck 70, as compared with the electrostatic chuck 40 in the above-described embodiment, a conductive thin film formed inside the bonding chamber 2 is electrically connected to a plurality of terminals 73-1 to 73-2. Is more reliably prevented. For this reason, the joining apparatus to which the electrostatic chuck 70 is applied prevents the occurrence of spark discharge using the thin film as an electrode in the joining chamber 2 in the same manner as the joining apparatus 1 in the above-described embodiment. In addition, the upper wafer 7 can be more reliably held on the electrostatic chuck 70, and further, the interval for maintaining the inside of the bonding chamber 2 can be extended.

  As compared with the pressure contact shaft 17 in the above-described embodiment, the pressure contact shaft 80 has a plurality of terminals 73-1 to 73-2 arranged on the surface opposite to the surface that holds the upper wafer 7 of the main body portion 71. Can be joined to a larger area of its opposite surface. For this reason, the joining apparatus to which the press contact shaft 80 is applied can ensure the rigidity of the electrostatic chuck 70 more reliably than the joining apparatus to which the press contact shaft 17 in the above-described embodiment is applied. When the upper wafer 7 and the lower wafer 8 are bonded, a larger load can be applied to the upper wafer 7 and the lower wafer 8.

  The electrostatic chuck 70 may further include a covering that covers the plurality of terminals 73-1 to 73-2. Such an electrostatic chuck can more reliably prevent the thin film from being electrically connected to the terminals 73-1 to 73-2 as compared with the electrostatic chuck 70.

DESCRIPTION OF SYMBOLS 1: Bonding apparatus 2: Bonding chamber 3: Load lock chamber 4: Vacuum pump 5: Gate valve 6: Transfer mechanism 7: Upper wafer 8: Lower wafer 9: Vacuum pump 10: Bonding apparatus controller 11: Pressure contact mechanism 12: Position Alignment mechanism 14: Ion gun 15: Electron source 16: Cartridge 17: Pressure contact shaft 18: Electrostatic chuck 19: Load meter 21: Body portion 22-1 to 22-2: Multiple internal electrodes 23-1 to 23-2: Multiple Terminal 25: Wiring 26: Power supply device 30: Electrostatic chuck 31: Main body portion 32-1 to 22-2: Plural internal electrodes 33-1 to 33-2: Plural terminals 34-1 to 34-2: Plural 40: Electrostatic chuck 41: Main body portion 42-1 to 42-2: A plurality of internal electrodes 43-1 to 43-2: A plurality of terminals 44-1 to 44-2: A plurality of shields 0: Electrostatic chuck 51: Main body portion 52-1 to 52-2: A plurality of internal electrodes 53-1 to 53-2: A plurality of terminals 54-1 to 54-2: A plurality of covering bodies 60: A pressure contact shaft 61- 1-61-2: Plural holes 70: Electrostatic chuck 71: Body portion 72-1-72-2: Plural internal electrodes 73-1 to 73-2: Plural terminals 80: Press contact shafts 81-1 to 81 -2: Plural holes 82-1 to 82-2: Plural coverings

Claims (5)

An electrostatic chuck;
A terminal electrically connected to an internal electrode formed inside the electrostatic chuck;
An activating device for irradiating particles to the surface of the bonding target held by the electrostatic chuck by applying a voltage to the internal electrode via the terminal;
A bonding chamber for forming a bonding atmosphere for bonding the objects to be bonded;
The said terminal is arrange | positioned on the opposite side of the surface holding the said joining object among the surfaces of the said electrostatic chuck . In claim 1 ,
A pressure contact shaft for supporting the electrostatic chuck;
The said terminal is arrange | positioned inside the hole formed in the said press-contact axis | shaft. In claim 2 ,
The joining apparatus which further comprises the coating | coated body which coat | covers the said terminal. In either claim 2 or claim 3 ,
The joining apparatus which further comprises the insulator which coat | covers the inner wall of the said hole. In any one of Claims 1-2 .
The joining apparatus which further comprises the shielding body which shields the said terminal from the said particle | grain.

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