JP4637250B2 - Local heating device - Google Patents

Local heating device Download PDF

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JP4637250B2
JP4637250B2 JP2009135884A JP2009135884A JP4637250B2 JP 4637250 B2 JP4637250 B2 JP 4637250B2 JP 2009135884 A JP2009135884 A JP 2009135884A JP 2009135884 A JP2009135884 A JP 2009135884A JP 4637250 B2 JP4637250 B2 JP 4637250B2
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substrate
support member
hot air
heating
air heater
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JP2010282045A (en
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和彦 上田
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Sharp Corp
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Sharp Corp
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Priority to PCT/JP2010/059545 priority patent/WO2010140683A1/en
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor

Description

本発明は、基板上に局所的に形成された液体あるいは熱硬化性部材を加熱乾燥し、膜形成させる局所加熱装置に関するものである。   The present invention relates to a local heating device for forming a film by heating and drying a liquid or a thermosetting member locally formed on a substrate.

液体あるいは熱硬化性部材を基板上に塗布し、乾燥させることで膜を形成させる技術は従来から多くの生産装置で利用されている。その中でも近年注目が高まっているのが、基板上の任意の箇所に必要量だけ液体を塗布し、乾燥させることで膜を形成させるパターニング技術である。このような技術にはディスペンサーやインクジェットを用いた技術がある。このような技術は、従来のフォトリソグラフィーによる真空プロセスを用いたパターン生成方法に代わり、脱真空プロセスに使用可能な技術として注目が高まっている。   A technique for forming a film by applying a liquid or a thermosetting member on a substrate and drying it has been conventionally used in many production apparatuses. Among them, a patterning technique that has been attracting attention in recent years is a patterning technique for forming a film by applying a required amount of liquid to an arbitrary location on a substrate and drying it. Such a technique includes a technique using a dispenser or an ink jet. Such a technique has been attracting attention as a technique that can be used in a vacuum removal process instead of a pattern generation method using a vacuum process by conventional photolithography.

例えば、インクジェットによるパターニング技術を用いた生産装置としては、赤色(R)、緑色(G)および青色(B)の各色からなるインクをガラス基板上に形成されているRGB用画素領域内に着弾させることによって各画素を埋め、カラーフィルタ(CF)パネルを形成する装置がある。この場合、画素領域内に埋められたインクは、オーブン等によって基板全体を加熱することで乾燥させ、膜を形成する。   For example, as a production apparatus using an inkjet patterning technique, inks of red (R), green (G), and blue (B) colors are landed in RGB pixel areas formed on a glass substrate. There is an apparatus that fills each pixel to form a color filter (CF) panel. In this case, the ink buried in the pixel region is dried by heating the entire substrate with an oven or the like to form a film.

また、このようなパターニング技術は全面印刷技術としてのみならず、混色、夾雑物の混入または付着といった欠陥部を修復するための技術としても広く用いられており、このような修復装置の開発も進んでいる。このような修復技術として、例えば、CFパネルにおいては、インクの混色が発生した欠陥画素や夾雑物が混入した欠陥画素の場合、欠陥領域のインク層膜を除去し、除去部分に再度インクを塗布して加熱乾燥することで画素を再形成する技術がある。   Such patterning technology is widely used not only as a full-surface printing technology, but also as a technology for repairing defective parts such as color mixing, mixing of foreign substances, or adhesion, and development of such a repairing apparatus is also progressing. It is out. As such a repair technique, for example, in a CF panel, in the case of a defective pixel in which ink color mixture occurs or a defective pixel mixed with impurities, the ink layer film in the defective area is removed and ink is applied again to the removed portion. Then, there is a technique for re-forming pixels by heating and drying.

液体塗布部の加熱乾燥方法としては、従来、オーブン、ホットプレート等で基板全体を加熱して乾燥させる方法を開示した先行文献として特許文献1がある。基板全体を加熱する場合、専用の大型加熱装置や耐熱性に優れた搬送ロボットが必要であり、また、加熱された基板を次工程に進めるために冷却する場所や時間も必要となり、製造コストの上昇やタクトが長くなるといった問題があった。   As a method for heating and drying the liquid application part, there is a conventional document that discloses a method of heating and drying the entire substrate with an oven, a hot plate, or the like. When heating the entire substrate, a dedicated large-scale heating device and a transfer robot with excellent heat resistance are required, and a place and time for cooling the heated substrate to proceed to the next process are also required. There was a problem that the rise and tact time became long.

特に、加熱乾燥箇所が少ない場合は、局所的に加熱し乾燥させる方が製造コストとタクトが有利になるため、液体塗布部だけを局所的に加熱乾燥させる技術への期待は高い。   In particular, when there are few places to be heated and dried, it is advantageous to produce locally and heat-dry only the liquid application part because the manufacturing cost and tact are more advantageous when locally heated and dried.

図2には、液体塗布部だけを局所的に加熱乾燥させる技術として、基板支持部材5にて基板1を一定高さに支持した上で、熱風ヒータ2により液体塗布部のみを局所加熱させ、不要な熱排気を取る排気管9を持つ局所加熱装置の構成断面図を示す。搬送コロ8上の基板を、基板支持部材5によってわずかに持ち上げて支持し、基板支持部材内側に配置された熱風ヒータ2により、基板下面より加熱する。加熱開始時の基板支持部材高さは予め設定されており、支持された基板と熱風ヒータとの間隔は一定に管理される。   In FIG. 2, as a technique for locally heating and drying only the liquid application part, the substrate support member 5 supports the substrate 1 at a certain height, and then the hot air heater 2 only locally heats the liquid application part. The structure sectional drawing of the local heating apparatus with the exhaust pipe 9 which takes unnecessary thermal exhaust is shown. The substrate on the transport roller 8 is slightly lifted and supported by the substrate support member 5, and is heated from the lower surface of the substrate by the hot air heater 2 disposed inside the substrate support member. The height of the substrate support member at the start of heating is set in advance, and the distance between the supported substrate and the hot air heater is managed to be constant.

基板支持部材は基板と直接接触しており、熱風ヒータにて基板を加熱処理する際、近接する基板支持部材も熱の影響を受け温度が上昇する。このため、基板支持部材は、基板に傷が付かないように耐熱性の高い樹脂材料で製作されている。   The substrate support member is in direct contact with the substrate, and when the substrate is heated with a hot air heater, the adjacent substrate support member is also affected by heat and the temperature rises. For this reason, the board | substrate support member is manufactured with the resin material with high heat resistance so that a board | substrate may not be damaged.

ただし、基板支持部材の温度が上昇すると、樹脂材料であるためにその強度が低下し、基板支持の際の荷重により変形する可能性が高くなる。基板支持部材の温度上昇を抑えるためには熱風ヒータとの距離を離すことが有効である。リング状の基板支持部材の場合、そのリング形状を大きくすることが基板支持部材の温度上昇を抑えるにあたって非常に有効な方法である。また、基板を支持する際の荷重も大きな面積で分散支持できるため、基板への集中荷重を防ぎ、基板割れのような不具合が発生する可能性を低減することができる。   However, when the temperature of the substrate support member rises, since it is a resin material, its strength decreases, and the possibility of deformation due to a load during substrate support increases. In order to suppress the temperature rise of the substrate support member, it is effective to increase the distance from the hot air heater. In the case of a ring-shaped substrate support member, increasing the ring shape is a very effective method for suppressing the temperature rise of the substrate support member. In addition, since the load for supporting the substrate can be dispersedly supported in a large area, concentrated load on the substrate can be prevented, and the possibility of occurrence of problems such as substrate cracking can be reduced.

特開2004−160296号JP 2004-160296 A

基板高さを一定にする基板支持部材の中心位置に加熱手段を配した構成によって基板エッジ部を加熱処理する場合、基板加熱条件を最適に保つために、加熱手段中心位置を基板処理位置に配置する必要がある。しかし、基板支持部材の支持位置が熱の影響を避けるために加熱手段中心位置との距離が離れている場合、基板支持部材の一部が、基板からはみ出して基板を支持することになる。また、基板端部周辺には基板アライメント機構等が配されており、基板支持部材と基板アライメント機構等の基板エッジ部近傍部材とが物理的に干渉し、接触する。両者を接触させないためには、基板支持部材が基板領域からはみ出さないように基板エッジ部から大きく内側へ配する必要があり、それにより、熱風ヒータによる基板エッジ部の加熱処理ができないという問題点がある。   When heat treatment is performed on the edge portion of the substrate with a structure in which the heating means is arranged at the center position of the substrate support member that keeps the substrate height constant, the heating means center position is placed at the substrate processing position in order to keep the substrate heating conditions optimal. There is a need to. However, when the support position of the substrate support member is separated from the center position of the heating means to avoid the influence of heat, a part of the substrate support member protrudes from the substrate and supports the substrate. In addition, a substrate alignment mechanism or the like is disposed around the substrate end portion, and the substrate support member and the substrate edge portion vicinity member such as the substrate alignment mechanism physically interfere with each other and come into contact with each other. In order not to contact the two, it is necessary to arrange the substrate support member largely inward from the substrate edge portion so that it does not protrude from the substrate region, and therefore, it is impossible to heat the substrate edge portion with a hot air heater. There is.

また、熱風ヒータで局所的に加熱された基板は膨張し、基板の反りが発生する。加熱された基板が大きく反ることにより、基板と熱風ヒータ間の距離が変化し、基板の処理温度を一定に管理できない。そのため、安定した加熱条件を保持できず、加熱後の熱硬化性部材の高品質化を図ることができないという問題点がある。   In addition, the substrate heated locally by the hot air heater expands and warps the substrate. When the heated substrate is greatly warped, the distance between the substrate and the hot air heater is changed, and the processing temperature of the substrate cannot be controlled uniformly. Therefore, there is a problem in that stable heating conditions cannot be maintained and the quality of the thermosetting member after heating cannot be improved.

本発明は上記の問題点に鑑みなされたものであって、加熱対象となる基板エッジ部の加熱を可能とし、基板の反りに対して安定した加熱条件を保持し、加熱後の熱硬化性部材の高品質化を図ることができる、局所加熱装置を提供することを目的とする。   The present invention has been made in view of the above problems, and enables heating of a substrate edge portion to be heated, maintains a stable heating condition against warping of the substrate, and is a thermosetting member after heating. An object of the present invention is to provide a local heating device that can improve the quality of the material.

本発明は、基板の加熱処理領域近傍を下方より基板に接触させ支持する基板支持部材と、基板の加熱対象となる局所位置に基板の上方より熱風を噴射して加熱する加熱手段とを有し、基板処理座標領域ごとに、加熱手段の熱風を噴射する座標と、基板支持部材の座標との相対位置関係を設定し、加熱手段の座標と、基板支持部材の座標とを独立して位置制御する。   The present invention includes a substrate support member that supports the substrate in the vicinity of the heat treatment region from below and supports the substrate, and a heating unit that heats the substrate to be heated by spraying hot air from above the substrate. For each substrate processing coordinate area, set the relative positional relationship between the coordinates for injecting hot air from the heating means and the coordinates of the substrate support member, and control the position of the coordinates of the heating means and the coordinates of the substrate support member independently. To do.

この局所加熱装置によると、基板エッジ部を加熱手段で加熱処理する際に、加熱手段の座標と、基板支持部材の座標とを独立して位置制御することで、加熱手段の中心位置と基板支持部材の中心位置とをずらして配し、基板支持部材を基板周辺部材と物理的に干渉しない位置に設定し、加熱手段を基板エッジ部に設定して加熱処理することで、基板エッジ近接位置の加熱処理を可能とする。   According to this local heating device, when the substrate edge portion is heated by the heating means, the position of the heating means and the coordinates of the substrate support member are independently controlled to control the center position of the heating means and the substrate support. By shifting the center position of the member, setting the substrate support member at a position where it does not physically interfere with the peripheral member of the substrate, and setting the heating means at the edge portion of the substrate for heat treatment, Allows heat treatment.

さらに、基板を支持する基板支持部材の支持領域より外側に、加熱手段の座標を配置できることが好ましい。   Furthermore, it is preferable that the coordinates of the heating means can be arranged outside the support region of the substrate support member that supports the substrate.

加熱手段を基板支持部材の支持領域より外側に配置することで、加熱処理による基板支持部材への熱の影響を抑えることができ、加熱による劣化を防ぐことができる。   By disposing the heating means outside the support region of the substrate support member, the influence of heat on the substrate support member due to the heat treatment can be suppressed, and deterioration due to heating can be prevented.

さらに、基板支持部材上における基板上面位置の高さと、加熱手段による加熱位置における基板上面位置の高さとの差分量を加熱手段の噴出し位置の高さ補正量として加熱手段の高さを制御することが好ましい。   Further, the height of the heating means is controlled by using the difference amount between the height of the substrate upper surface position on the substrate support member and the height of the substrate upper surface position at the heating position by the heating means as a height correction amount of the ejection position of the heating means. It is preferable.

基板の撓みによる高さの差分量を補正量として加熱手段の高さを制御することで、加熱手段の噴出し位置と基板上面位置との距離を一定に保つことができ、加熱条件を安定化することで加熱後の基板の高品質化を図ることが可能となる。   By controlling the height of the heating means using the difference in height due to substrate deflection as a correction amount, the distance between the ejection position of the heating means and the upper surface position of the substrate can be kept constant, and the heating conditions are stabilized. This makes it possible to improve the quality of the substrate after heating.

さらに、基板支持部材の高さを設定することで基板の加熱処理による反り方向を一定方向にすることが好ましい。   Furthermore, it is preferable to set the height of the substrate support member so that the warping direction due to the heat treatment of the substrate is a constant direction.

加熱処理開始時に基板支持部材の高さを設定することで基板に反りを与え、加熱処理による反り方向を一定方向にすることで、加熱手段の噴出し位置と基板上面位置との距離を一定にすることができ、加熱条件を安定化することで加熱後の基板の高品質化を図ることが可能となる。   By setting the height of the substrate support member at the start of the heat treatment, the substrate is warped, and the distance between the ejection position of the heating means and the substrate upper surface position is made constant by making the warpage direction by the heat treatment constant. It is possible to improve the quality of the substrate after heating by stabilizing the heating conditions.

本発明の局所加熱装置によれば、加熱手段の座標と、基板支持部材の座標とを独立して位置制御することで、加熱対象である基板エッジ近接位置の加熱処理を可能とすることができる。また、基板上面位置と加熱手段との距離を一定に保つことができるため、基板の加熱条件をより厳密に管理することが可能となり、加熱後の基板の高品質化を図ることが可能となる。   According to the local heating device of the present invention, the position of the heating means and the coordinates of the substrate support member are independently controlled, so that it is possible to perform the heating process at the substrate edge proximity position that is the heating target. . Further, since the distance between the upper surface position of the substrate and the heating means can be kept constant, the heating conditions of the substrate can be managed more strictly, and the quality of the substrate after heating can be improved. .

本発明の加熱処理動作を示すブロック図である。It is a block diagram which shows the heat processing operation | movement of this invention. 従来技術における局所加熱装置の構成を示す断面図である。It is sectional drawing which shows the structure of the local heating apparatus in a prior art. 本発明の装置構成を示す平面図である。It is a top view which shows the apparatus structure of this invention. 本発明の装置構成を示す断面図である。It is sectional drawing which shows the apparatus structure of this invention. 搬送コロ上の基板の状態を示す図である。It is a figure which shows the state of the board | substrate on a conveyance roller. 基板が基板支持部材に支持された状態を示す図である。It is a figure which shows the state by which the board | substrate was supported by the board | substrate support member. 基板支持部材とアライメント機構の干渉を示す図である。It is a figure which shows interference of a board | substrate support member and an alignment mechanism. 基板を複数の領域に分割した状態を示す図である。It is a figure which shows the state which divided | segmented the board | substrate into the several area | region. 複数の領域に分割した領域ごとのレシピ1を示す図である。It is a figure which shows the recipe 1 for every area | region divided | segmented into the several area | region. 本発明における熱風ヒータと基板支持部材の位置ずれを示す図である。It is a figure which shows the position shift of the hot air heater and board | substrate support member in this invention. 複数の領域に分割した領域ごとのレシピ2を示す図である。It is a figure which shows the recipe 2 for every area | region divided | segmented into the several area | region. 熱風ヒータと基板支持部材との相対位置関係を示す図である。It is a figure which shows the relative positional relationship of a hot air heater and a board | substrate support member. 基板支持部材位置を同一とした場合の基板エッジ部のたわみを示す図である。It is a figure which shows the deflection | deviation of the board | substrate edge part at the time of making a board | substrate support member position the same. 基板支持部材と加熱手段との間隔を一定にした場合の基板エッジ部のたわみを示す図である。It is a figure which shows the deflection | deviation of the board | substrate edge part when the space | interval of a board | substrate support member and a heating means is made constant. 基板と加熱手段の噴出し位置の高さ関係を示す図である。It is a figure which shows the height relationship of the ejection position of a board | substrate and a heating means. 基板の加熱による反りを示す図である。It is a figure which shows the curvature by the heating of a board | substrate. 基板の反り方向を示す図である。It is a figure which shows the curvature direction of a board | substrate. 基板支持部材上の基板の反りを示す図である。It is a figure which shows the curvature of the board | substrate on a board | substrate support member. 基板支持部材上の基板の反りを示す図である。It is a figure which shows the curvature of the board | substrate on a board | substrate support member.

以下、この発明に基づいた本発明の実施の形態における局所加熱装置において、図を参照しながら説明する。   Hereinafter, a local heating device according to an embodiment of the present invention based on the present invention will be described with reference to the drawings.

図3、図4に局所加熱装置の構成を示す。基板搬送用枠体7には、基板1を位置決め、固定するためのアライメントコロ61と、このアライメントコロ61を駆動するエアシリンダー62が設置され、アライメント機構6を構成している。エアシリンダー62を動作させると、基板1は、その四隅をアライメントコロ61により位置決め、固定される。基板1は図示しない多数の搬送コロ8上に配されており、図示しない搬送機構によりY軸方向に往復移動可能となっている。   3 and 4 show the configuration of the local heating device. An alignment roller 61 for positioning and fixing the substrate 1 and an air cylinder 62 for driving the alignment roller 61 are installed in the substrate transport frame 7 to constitute the alignment mechanism 6. When the air cylinder 62 is operated, the four corners of the substrate 1 are positioned and fixed by the alignment rollers 61. The substrate 1 is arranged on a large number of conveyance rollers 8 (not shown), and can be reciprocated in the Y-axis direction by a conveyance mechanism (not shown).

基板1の上方には、加熱手段2と冷却ノズル3がユニット保持部材4に固定されている。加熱手段2としては、熱風を噴射する熱風ヒータを使用してもよい。ユニット保持部材4は、図示しないX、Zステージによって、前記基板搬送方向(Y)と直交するX方向、上下Z方向に移動可能となっている。加熱処理時の基板1と熱風ヒータなどの加熱手段2先端位置の間隔は、事前に基板加熱に最適なギャップ寸法となるよう位置制御される。   Above the substrate 1, a heating means 2 and a cooling nozzle 3 are fixed to a unit holding member 4. As the heating means 2, a hot air heater that injects hot air may be used. The unit holding member 4 is movable in an X direction and a vertical Z direction perpendicular to the substrate transport direction (Y) by an X and Z stage (not shown). The distance between the position of the substrate 1 and the tip of the heating means 2 such as a hot air heater during the heat treatment is controlled in advance so as to have an optimum gap size for substrate heating.

使用されるガラス基板は、一辺が3mを超える大きさである一方、その厚さは0.7mm程度と非常に薄い。前述のように基板1は搬送コロ8上を滑るように移動するが、全くの平板とはならない。図5(a)は、基板1が搬送コロ8に支持されている状態を示す断面図であり、図5(b)は、基板1が搬送コロ8に偏って支持されている状態を示す断面図である。図5(a)に示すように、隣り合う搬送コロ8同士の間において、基板は自重によるたわみが生じて基板高さがばらつく。また、搬送コロ8上面の高さをばらつき無く一致させることは困難であり、搬送コロ8上の基板高さのばらつきの原因の一つとなる。図5(b)に示すように、基板端部周辺を加熱手段2である熱風ヒータにて加熱処理する場合、基板1は搬送コロ8によって片持ち状態で支持される。そのため、片持ち状態になっている部分の基板1の自重により、大きなたわみが発生する場合がある。   The glass substrate used has a size exceeding 3 m on one side, but its thickness is very thin, about 0.7 mm. As described above, the substrate 1 moves so as to slide on the transport roller 8, but it does not become a flat plate at all. FIG. 5A is a cross-sectional view showing a state in which the substrate 1 is supported by the transport roller 8, and FIG. 5B is a cross-section showing a state in which the substrate 1 is supported by the transport roller 8 in a biased manner. FIG. As shown in FIG. 5 (a), the substrate is deflected by its own weight between the adjacent conveyance rollers 8, and the substrate height varies. Further, it is difficult to match the height of the upper surface of the transport roller 8 without variation, which is one of the causes of variations in the height of the substrate on the transport roller 8. As shown in FIG. 5 (b), when the periphery of the substrate is heated by a hot air heater as the heating means 2, the substrate 1 is supported in a cantilevered state by a transfer roller 8. Therefore, a large deflection may occur due to the weight of the substrate 1 in the cantilevered state.

熱風ヒータによる局所加熱装置においては、熱風ヒータと基板1間の距離がばらつくと、加熱処理時の基板温度も距離に応じてばらつき、一定とならない。基板1に塗布された熱硬化性部材を、加熱処理後に高品質に保つためには、あらかじめ設定された最適基板温度範囲に加熱することが必要であり、加熱温度のばらつきを小さく抑える必要がある。   In a local heating device using a hot air heater, if the distance between the hot air heater and the substrate 1 varies, the substrate temperature during the heat treatment varies depending on the distance and does not become constant. In order to keep the thermosetting member applied to the substrate 1 in high quality after the heat treatment, it is necessary to heat the thermosetting member to a preset optimum substrate temperature range, and it is necessary to suppress the variation in the heating temperature. .

このため、図6に示すように、基板1の下方には基板支持部材5が配されており、ここでの基板支持部材5はドーナツ型をなし、リング状に基板と接触する。基板支持部材5は図示しないX、Zステージに搭載されており、基板搬送方向と直交するX方向、及び、上下Z方向に移動可能である。また、基板1上方の熱風ヒータも基板搬送Y方向と直交するX方向に移動可能であるが、装置X−Y平面でみて、基板支持部材5の中心位置と熱風ヒータ中心位置は略一致できるようY方向位置は設定されている。ここでは基板支持部材5が搬送コロ8上面よりわずか上方に配された状態を示す。基板支持部材5を搬送コロ8上面より上方に配し、基板1を若干量持上げることで、搬送コロ8上の基板1が撓んでいたとしても、基板支持部材中央部の基板高さはほぼ一定高さに規定され、基板1と熱風ヒータとの間隔を一定に保つことができる。   For this reason, as shown in FIG. 6, a substrate support member 5 is disposed below the substrate 1, and the substrate support member 5 here has a donut shape and contacts the substrate in a ring shape. The substrate support member 5 is mounted on an X and Z stage (not shown), and is movable in the X direction perpendicular to the substrate transport direction and in the vertical Z direction. The hot air heater above the substrate 1 is also movable in the X direction perpendicular to the substrate transport Y direction, but the center position of the substrate support member 5 and the hot air heater center position can be substantially coincided with each other when viewed in the apparatus XY plane. The Y direction position is set. Here, a state in which the substrate support member 5 is disposed slightly above the upper surface of the transport roller 8 is shown. Even if the substrate 1 on the conveyance roller 8 is bent by arranging the substrate support member 5 above the upper surface of the conveyance roller 8 and lifting the substrate 1 by a small amount, the substrate height at the center portion of the substrate support member is almost equal. The height is defined to be constant, and the distance between the substrate 1 and the hot air heater can be kept constant.

ところで、熱硬化性部材は、基板最外周のごく一部を除いた基板1のほぼ全面に塗布される可能性がある。基板1の中央付近を加熱処理する際は、図6に示す基板1、基板支持部材5、熱風ヒータの各配置となり、基板支持部材5の中心位置の基板1を加熱処理する。ここでは、基板支持部材5周辺にアライメントコロ61等の他の構成部品はなく、安定した加熱処理が可能である。   By the way, the thermosetting member may be applied to almost the entire surface of the substrate 1 except for a very small part of the outermost periphery of the substrate. When the vicinity of the center of the substrate 1 is heat-treated, the substrate 1, the substrate support member 5 and the hot air heater shown in FIG. 6 are arranged, and the substrate 1 at the center position of the substrate support member 5 is heat-treated. Here, there are no other components such as the alignment roller 61 around the substrate support member 5, and stable heat treatment is possible.

ところで、基板支持部材5の形状が小さいと、加熱処理時、熱風ヒータにより基板支持部材5も加熱され温度が上昇する。基板支持部材5は基板1と接触するため、基板1にキズを付けないよう樹脂材にて形成されている。耐熱性の樹脂材が選択されるが、基板1を支持した際の荷重により加熱量が大きいと熱変形する可能性が大きくなる。このため事前検討により、許容できる温度上昇となる大きさの基板支持部材5形状が選択されている。   By the way, if the shape of the substrate support member 5 is small, the substrate support member 5 is also heated by the hot air heater during the heat treatment, and the temperature rises. Since the substrate support member 5 is in contact with the substrate 1, the substrate support member 5 is formed of a resin material so as not to damage the substrate 1. A heat-resistant resin material is selected, but if the heating amount is large due to the load when the substrate 1 is supported, the possibility of thermal deformation increases. For this reason, the shape of the substrate support member 5 having a size that allows an allowable temperature increase has been selected by prior examination.

一方、図7は基板エッジ部を加熱処理する場合の、熱風ヒータなどの加熱手段2、基板支持部材5の位置関係を示す。基板支持部材5と加熱手段2である熱風ヒータの中心位置は合致した状態である。基板支持部材5は基板外周部より外側に大きくはみ出しており、基板位置決め、固定用アライメントコロ61と物理的に干渉している。また、熱風ヒータはアライメントコロ61に近接して基板1を加熱しており、基板加熱後の熱風がアライメントコロ61を加熱してしまう。アライメントコロ61も基板端面と接触するため、基板端面にキズを付けないよう樹脂材で形成されており、基板アライメント時に高温になると、熱変形する可能性が高くなる。   On the other hand, FIG. 7 shows the positional relationship between the heating means 2 such as a hot air heater and the substrate support member 5 when the substrate edge portion is heat-treated. The center positions of the substrate support member 5 and the hot air heater which is the heating means 2 are in agreement. The substrate support member 5 protrudes greatly outside the outer peripheral portion of the substrate and physically interferes with the alignment roller 61 for positioning and fixing the substrate. Further, the hot air heater heats the substrate 1 in the vicinity of the alignment roller 61, and the hot air after heating the substrate heats the alignment roller 61. Since the alignment roller 61 is also in contact with the substrate end surface, the alignment roller 61 is formed of a resin material so as not to damage the substrate end surface. If the temperature becomes high during substrate alignment, the possibility of thermal deformation increases.

このように、基板支持部材5と熱風ヒータによる局所加熱装置の場合、基板エッジ部や外周部の加熱処理時に各部材の物理的干渉や、構成部品の異常加熱という問題が発生する。   As described above, in the case of the local heating device using the substrate support member 5 and the hot air heater, problems such as physical interference between the members and abnormal heating of the components occur during the heat treatment of the substrate edge portion and the outer peripheral portion.

図8は、基板1を複数の領域に分割した状態を示す。ここでは基板エッジ部のP2〜P5とそれ以外であるP1の5つの領域に分割している。各々の基板処理座標領域ごとに、熱風ヒータ中心座標、基板支持部材5中心座標の相対位置関係を設定した処理レシピを持つ。   FIG. 8 shows a state in which the substrate 1 is divided into a plurality of regions. Here, the substrate is divided into five regions of P2 to P5 at the edge portion of the substrate and P1 which is other than that. Each substrate processing coordinate area has a processing recipe in which the relative positional relationship between the hot air heater center coordinates and the substrate support member 5 center coordinates is set.

図9は、図8での基板処理座標領域と熱風ヒータ中心座標、基板支持部材5中心座標の相対位置関係(レシピ1)を示す。   FIG. 9 shows a relative positional relationship (recipe 1) between the substrate processing coordinate area, the hot air heater center coordinate, and the substrate support member 5 center coordinate in FIG.

熱風ヒータ中心座標Xhは、基板上の熱硬化性部材塗布位置X0を熱風ヒータ中心で加熱処理する必要があるため、通常Xh=X0となる。   The hot air heater center coordinate Xh is normally Xh = X0 because it is necessary to heat the thermosetting member application position X0 on the substrate at the hot air heater center.

基板支持部材5中心座標Xpは、基板領域P1では、Xp=Xh(=X0)が設定され、基板領域P2、P4では、Xp=A(一定値)が設定され、基板領域P3、P5では、Xp=B(一定値)が設定されている。つまり、基板領域P1では熱風ヒータと基板支持部材5の中心が一致して加熱処理を行う。その他の基板領域P2〜P5では、基板支持部材5中心位置は、基板周辺部材に物理的に干渉しないように、例えば、基板領域から基板支持部材がはみ出さない位置A、またはBに設定され、P2〜P5基板領域では、熱風ヒータ中心位置は基板支持部材5中心位置とはずれて配される。   As for the substrate support member 5 center coordinates Xp, Xp = Xh (= X0) is set in the substrate region P1, Xp = A (a constant value) is set in the substrate regions P2 and P4, and in the substrate regions P3 and P5, Xp = B (constant value) is set. That is, in the substrate region P1, the heating process is performed with the hot air heater and the center of the substrate support member 5 being aligned. In the other substrate regions P2 to P5, the center position of the substrate support member 5 is set to, for example, a position A or B where the substrate support member does not protrude from the substrate region so as not to physically interfere with the substrate peripheral member. In the P2 to P5 substrate region, the hot air heater center position is arranged away from the substrate support member 5 center position.

図10は、領域P2における基板支持部材5と加熱手段2である熱風ヒータとの位置関係を示す断面図である。基板支持部材5は基板領域からはみ出さない位置Xp=Aに固定され、熱風ヒータは加熱処理位置に位置制御される(Xh=X0)。   FIG. 10 is a cross-sectional view showing the positional relationship between the substrate support member 5 and the hot air heater as the heating means 2 in the region P2. The substrate support member 5 is fixed at a position Xp = A that does not protrude from the substrate region, and the hot air heater is position-controlled at the heat treatment position (Xh = X0).

このように熱風ヒータ中心座標と基板支持部材5中心座標とを単純に一致させる位置制御(P1領域)に、両座標を独立させた位置制御を組み合わせる(P2〜P5領域)相対位置関係を複数設定した少なくとも一種類の処理レシピを持たせ、この処理レシピに従い熱風ヒータ、基板支持部材5の座標位置を制御、加熱処理することにより、基板支持部材5と基板エッジ部周辺部材との接触を防いで基板エッジ部の加熱処理が可能となる。   A plurality of relative positional relationships are set by combining position control (P1 area) where the hot air heater center coordinates and the substrate support member 5 center coordinates are simply matched with position control where both coordinates are independent (P2 to P5 areas). The at least one kind of processing recipe is provided, and the coordinate position of the hot air heater and the substrate support member 5 is controlled and heat-treated according to this processing recipe, thereby preventing contact between the substrate support member 5 and the substrate edge portion peripheral member. The substrate edge portion can be heat-treated.

一方、熱風ヒータなどの加熱手段2中心位置と基板支持部材5中心位置がずれるということは、熱風ヒータが基板支持部材5に近づくことにより基板支持部材5自身が加熱されることになる。基板支持部材5は、基板1と接触した際に基板1に傷を付けないよう耐熱性の高い樹脂材料にて形成されているが、熱風ヒータと基板支持部材5との距離が縮まって基板支持部材5の温度上昇が大きいと、基板支持部材5が熱変形し、基板支持に悪影響を及ぼす可能性がある。   On the other hand, the fact that the center position of the heating means 2 such as a hot air heater is shifted from the center position of the substrate support member 5 means that the substrate support member 5 itself is heated when the hot air heater approaches the substrate support member 5. The substrate support member 5 is formed of a resin material having high heat resistance so as not to damage the substrate 1 when coming into contact with the substrate 1, but the distance between the hot air heater and the substrate support member 5 is reduced to support the substrate. If the temperature rise of the member 5 is large, the substrate support member 5 is thermally deformed, which may adversely affect the substrate support.

そこで、基板支持部材5が基板1を支持する領域の外側に熱風ヒータを配する局所加熱装置の構成とする。   Therefore, a configuration of a local heating device in which a hot air heater is arranged outside the region where the substrate support member 5 supports the substrate 1 is adopted.

図11は、図8領域区分での基板処理座標と熱風ヒータ中心座標、基板支持部材5中心座標の相対位置関係(レシピ2)を示す。   FIG. 11 shows the relative positional relationship (recipe 2) between the substrate processing coordinates, the hot air heater center coordinates, and the substrate support member 5 center coordinates in the region section of FIG.

熱風ヒータ中心座標Xhは、基板上の熱硬化性部材塗布位置X0を熱風ヒータ中心で加熱処理する必要があるため、通常Xh=X0となる。   The hot air heater center coordinate Xh is normally Xh = X0 because it is necessary to heat the thermosetting member application position X0 on the substrate at the hot air heater center.

基板支持部材5中心座標Xpは、基板領域P1では、Xp=Xh(=X0)が設定され、基板領域P2、P4では、Xp=Xh−α が設定され、基板領域P3、P5では、Xp=Xh+α が設定されている。つまり、基板領域P1では熱風ヒータと基板支持部材5の中心が一致して加熱処理を行う。その他の基板領域P2〜P5では、基板支持部材5中心位置は熱風ヒータ中心位置に対してα、あるいは−αだけオフセット配置設定されている。   As for the substrate support member 5 center coordinates Xp, Xp = Xh (= X0) is set in the substrate region P1, Xp = Xh−α is set in the substrate regions P2 and P4, and Xp = Xh in the substrate regions P3 and P5. Xh + α is set. That is, in the substrate region P1, the heating process is performed with the hot air heater and the center of the substrate support member 5 being aligned. In the other substrate regions P2 to P5, the center position of the substrate support member 5 is set to be offset relative to the center position of the hot air heater by α or −α.

図12(a)はP2領域を加熱処理する際の熱風ヒータなどの加熱手段2と基板支持部材5の位置関係を説明する平面図を示し、図12(b)は側面図を示す。基板1は基板支持部材5によって搬送コロ8上の基板位置より所定量だけ上方に持上げられている。基板1上部熱風ヒータ中心位置Xhは、熱硬化性部材塗布位置X0と合致するよう位置決めされる。一方、基板支持部材5中心位置Xpは、熱風ヒータ中心位置から−αの位置に配される。ここでは、基板支持部材5の外側に熱風ヒータ中心が配されている。オフセット値αの大きさは、熱風ヒータにより基板支持部材5の耐熱温度以上に加熱されない、基板支持部材5が最もアライメントコロ61に近づいた場合でも物理的に接触しないなどの条件によって設定されている。   12A shows a plan view for explaining the positional relationship between the heating means 2 such as a hot air heater and the substrate support member 5 when the P2 region is heat-treated, and FIG. 12B shows a side view. The substrate 1 is lifted upward by a predetermined amount from the substrate position on the transport roller 8 by the substrate support member 5. The substrate 1 upper hot air heater center position Xh is positioned so as to coincide with the thermosetting member application position X0. On the other hand, the substrate support member 5 center position Xp is arranged at a position −α from the hot air heater center position. Here, the center of the hot air heater is disposed outside the substrate support member 5. The magnitude of the offset value α is set according to conditions such that the hot air heater does not heat the substrate support member 5 to a temperature higher than the heat resistant temperature, and the substrate support member 5 is not physically contacted even when it is closest to the alignment roller 61. .

このような基板支持部材5が基板1を支持する領域の外側に熱風ヒータなどの加熱手段2を配する構成とすることにより、基板エッジ部を加熱処理する場合においても、熱風ヒータと基板支持部材5との距離を十分に保つことができるため、基板支持部材5の大きな温度上昇を抑えることが出来る。また、基板支持部材5は基板領域内部に配置されるため、基板エッジ部周辺部材との接触を防ぐ構成とすることが可能となる。   By adopting a configuration in which the heating means 2 such as a hot air heater is arranged outside the region where the substrate support member 5 supports the substrate 1, the hot air heater and the substrate support member can be used even when the substrate edge portion is heated. Since the distance to 5 can be sufficiently maintained, a large temperature rise of the substrate support member 5 can be suppressed. Further, since the substrate support member 5 is disposed inside the substrate region, it is possible to prevent the contact with the peripheral member of the substrate edge portion.

リング状の基板支持部材5により基板1を持上げた際、基板支持部材5の中心の基板1下面高さは、基板支持部材5上面(基板受け面)高さとほぼ同じである。熱風ヒータの中心位置からαだけずらした位置で基板支持部材5が基板1を支持した場合、基板支持部材5による片持ち支持となり、基板1のソリやたわみの影響により基板高さが若干ばらつく可能性がある。しかし、基板支持部材5を用いない場合と比較して、熱風ヒータと基板1との間隔のばらつきははるかに小さい。その結果、基板1の加熱温度を設定温度に近づけることができ、加熱後の熱硬化性部材の高品質化を図ることが可能となる。   When the substrate 1 is lifted by the ring-shaped substrate support member 5, the height of the lower surface of the substrate 1 at the center of the substrate support member 5 is substantially the same as the height of the upper surface (substrate receiving surface) of the substrate support member 5. When the substrate support member 5 supports the substrate 1 at a position shifted by α from the center position of the hot air heater, the substrate support member 5 cantilevered the substrate, and the substrate height may vary slightly due to the influence of warpage or deflection of the substrate 1. There is sex. However, as compared with the case where the substrate support member 5 is not used, the variation in the distance between the hot air heater and the substrate 1 is much smaller. As a result, the heating temperature of the substrate 1 can be brought close to the set temperature, and it is possible to improve the quality of the thermosetting member after heating.

このように、基板支持部材5を持つ局所加熱装置においては、基板処理座標領域と熱風ヒータ中心座標、基板支持部材5中心座標の相対位置関係を複数設定した処理レシピを持ち、この処理レシピに従い熱風ヒータ、基板支持部材5の座標位置を制御することにより、基板支持部材5で基板1を支持しながら熱風ヒータにより基板全面を加熱処理することができる。   Thus, the local heating apparatus having the substrate support member 5 has a processing recipe in which a plurality of relative positional relationships between the substrate processing coordinate area, the hot air heater center coordinates, and the substrate support member 5 center coordinates are set. By controlling the coordinate positions of the heater and the substrate support member 5, the entire surface of the substrate can be heated by the hot air heater while the substrate 1 is supported by the substrate support member 5.

なお、この実施例では、基板を5つの処理領域に分割したが、基板のアライメント機構6の構成や、基板支持部材5形状等の要因により、各領域を様々な分割数、形状に分割することも可能である。また、この実施例では加熱手段2である熱風ヒータと基板支持部材5とのオフセット値をある一つの設定値αとしたが、基板支持部材5と他の部材との干渉領域によって、複数のオフセット設定値とすることも可能である。また、複数の熱風ヒータを用いての加熱処理に対応して、熱風ヒータ中心位置を複数設定することも可能である。   In this embodiment, the substrate is divided into five processing regions, but each region is divided into various division numbers and shapes depending on factors such as the configuration of the substrate alignment mechanism 6 and the shape of the substrate support member 5. Is also possible. In this embodiment, the offset value between the hot air heater as the heating means 2 and the substrate support member 5 is set to a certain set value α. However, a plurality of offsets are set depending on the interference region between the substrate support member 5 and other members. It can also be a set value. Further, it is possible to set a plurality of hot air heater center positions corresponding to the heat treatment using a plurality of hot air heaters.

図1は、図4に示す基板冷却ノズルの開閉を含めた、加熱処理動作のブロック図の一例を示す。装置構成や、基板処理分割数などの条件により処理レシピを選択する(S1)。熱硬化性部材が基板に塗布された加熱処理座標X0、Y0が入力され(S2)、その座標が含まれる処理領域が選択される(S3)。選択された処理領域に設定されたテーブルを参照(S4)。テーブルに従い、熱風ヒータ、基板支持部材5、及び、基板の移動・位置制御(S5)。熱風ヒータを基板加熱位置まで降下、基板支持部材5による基板1の支持。熱風ヒータが常時ONの場合、基板加熱開始(S6)。熱硬化性部材の十分な硬化を確保する加熱処理(S7)。加熱後、熱風ヒータ、基板支持部材5が退避(S8)。冷却ノズル弁開放し基板冷却開始(S9)。基板温度払い出し設定温度まで冷却(S10)。冷却ノズル弁閉鎖し基板冷却終了(S11)。同じ基板1に他の加熱処理ポイントがあるか判定(S12)。他の点を加熱処理する必要がある場合(Yes)は処理領域の判定(S3)へ戻って追加処理を継続、必要がない場合(No)は、熱風ヒータと基板支持部材5をホームポジションに移動(S13)、基板1を払い出す(S14)。   FIG. 1 shows an example of a block diagram of a heat treatment operation including opening and closing of the substrate cooling nozzle shown in FIG. A processing recipe is selected according to conditions such as the apparatus configuration and the number of substrate processing divisions (S1). The heat treatment coordinates X0 and Y0 on which the thermosetting member is applied to the substrate are input (S2), and the treatment area including the coordinates is selected (S3). Refer to the table set in the selected processing area (S4). According to the table, the hot air heater, the substrate support member 5, and the substrate movement / position control (S5). The hot air heater is lowered to the substrate heating position, and the substrate 1 is supported by the substrate support member 5. When the hot air heater is always ON, substrate heating is started (S6). A heat treatment for ensuring sufficient curing of the thermosetting member (S7). After the heating, the hot air heater and the substrate support member 5 are retracted (S8). The cooling nozzle valve is opened and substrate cooling is started (S9). Cooling to substrate temperature discharge set temperature (S10). The cooling nozzle valve is closed and the substrate cooling is completed (S11). It is determined whether there is another heat treatment point on the same substrate 1 (S12). If it is necessary to heat-treat other points (Yes), the process returns to the processing area determination (S3) to continue the additional processing. If not necessary (No), the hot air heater and the substrate support member 5 are brought to the home position. The movement (S13) and the substrate 1 are dispensed (S14).

ここでは、熱風ヒータから常時、熱風が噴射される常時ONにて説明したが、基板1を過熱するたびに熱風ヒータの電力供給をON/OFF制御するようにしても良い。   Here, the description has been made on the condition that the hot air is constantly ejected from the hot air heater, but the power supply of the hot air heater may be controlled to be turned on / off every time the substrate 1 is overheated.

図12の構成においては、基板支持部材5が基板1を支持する領域の外側に熱風ヒータなどの加熱手段2を配したが、図12(b)において、基板1は基板支持部材5によって片持ち支持されている。熱風ヒータからの熱風の影響による基板支持部材5の温度上昇を抑えたい場合には、熱風ヒータ中心位置と基板支持部材5との距離αを少しでも大きくとる必要がある。しかしその一方で、基板1の片持ち量が増え、基板1の自重により熱風ヒータ中心位置での基板下面高さも基板支持部材5上面よりも下方にたわむ量が増える。加熱すべき位置での基板のたわみ量が大きいと、熱風ヒータと基板1との間隔が大きくなり、基板1上の熱硬化性部材の加熱温度が低下してしまう。   In the configuration of FIG. 12, the heating means 2 such as a hot air heater is disposed outside the region where the substrate support member 5 supports the substrate 1. In FIG. 12B, the substrate 1 is cantilevered by the substrate support member 5. It is supported. In order to suppress the temperature rise of the substrate support member 5 due to the influence of hot air from the hot air heater, it is necessary to make the distance α between the hot air heater center position and the substrate support member 5 as large as possible. However, on the other hand, the cantilever amount of the substrate 1 increases, and the substrate lower surface height at the center position of the hot air heater also bends lower than the upper surface of the substrate support member 5 due to the weight of the substrate 1. If the deflection amount of the substrate at the position to be heated is large, the distance between the hot air heater and the substrate 1 becomes large, and the heating temperature of the thermosetting member on the substrate 1 is lowered.

このため、熱処理すべき基板座標における基板支持部材5上の基板高さと、基板1座標位置の基板高さとの差分量を熱風ヒータの高さ補正量ΔZとする補正テーブルを作成する。   Therefore, a correction table is created in which the difference between the substrate height on the substrate support member 5 at the substrate coordinates to be heat-treated and the substrate height at the substrate 1 coordinate position is the height correction amount ΔZ of the hot air heater.

図13(a)、図13(b)、図13(c)は、基板エッジ部の加熱処理にあたり、基板支持部材5位置が同一で、熱風ヒータ位置が移動するよう制御する際の一例である。熱風ヒータと基板支持部材5との距離がα1、α2、基板支持部材5上の基板1と加熱処理すべき座標位置の基板1との高さの差がたわみ補正量ΔZ1、ΔZ2となる。   13 (a), 13 (b), and 13 (c) are examples of controlling the substrate support member 5 position to be the same and the hot air heater position to move in the heat treatment of the substrate edge portion. . The distance between the hot air heater and the substrate support member 5 is α1, α2, and the difference in height between the substrate 1 on the substrate support member 5 and the substrate 1 at the coordinate position to be heated is the deflection correction amounts ΔZ1, ΔZ2.

図14(a)、図14(b)、図14(c)は、基板エッジ部の加熱処理にあたり、基板支持部材5と熱風ヒータとの間隔を一定に位置が移動するよう制御する際の一例である。熱風ヒータと基板支持部材5との距離が一定値α3、基板支持部材5上の基板1と加熱処理すべき座標位置の基板1との高さの差がたわみ補正量ΔZ3となる。熱風ヒータ中心座標Xhの変化量が小さい場合は、基板支持部材5との距離が一定値であればこのたわみ補正量も大きく変化しない。   14 (a), 14 (b), and 14 (c) are examples of controlling the distance between the substrate support member 5 and the hot air heater to move at a constant position in the heat treatment of the substrate edge portion. It is. The distance between the hot air heater and the substrate support member 5 is a constant value α3, and the difference in height between the substrate 1 on the substrate support member 5 and the substrate 1 at the coordinate position to be heated is the deflection correction amount ΔZ3. When the change amount of the hot air heater center coordinate Xh is small, the deflection correction amount does not change greatly if the distance from the substrate support member 5 is a constant value.

図15は、基板1と加熱手段2である熱風ヒータの位置関係を示す。図15(a)は、熱風ヒータ1が基板表面より大きく逃げた場所に保持された待機時の状態を示す。基板1をY方向に動かす際や、熱風ヒータをX方向に高速に動かす際など、基板1と熱風ヒータとの干渉を避けるために熱風ヒータを基板1から大きく逃がしている。また、熱風ヒータは、通電開始から所定温度まで昇温するまで時間がかかるため、加熱処理対象の基板が搬入された後、熱風ヒータへの通電を開始したのでは、加熱開始までの時間がかかりタクトタイムが大幅に伸びてしまう。このため、熱風ヒータへ常時通電させておくことはタクトタイム短縮のために有効である。常時通電の熱風ヒータにより基板加熱処理部以外を不要に加熱させたくない際も、熱風ヒータを大きく逃がすことは有効である。   FIG. 15 shows the positional relationship between the substrate 1 and the hot air heater as the heating means 2. FIG. 15A shows a standby state in which the hot air heater 1 is held at a place where it escapes larger than the substrate surface. When the substrate 1 is moved in the Y direction or when the hot air heater is moved at high speed in the X direction, the hot air heater is largely escaped from the substrate 1 in order to avoid interference between the substrate 1 and the hot air heater. In addition, since the hot air heater takes time from the start of energization until the temperature is raised to a predetermined temperature, if energization of the hot air heater is started after the substrate to be heat-treated is carried in, it takes time until the heating starts. The tact time is greatly increased. For this reason, it is effective to reduce the tact time by always energizing the hot air heater. Even when it is not desired to heat the parts other than the substrate heating unit unnecessarily by the hot air heater that is always energized, it is effective to release the hot air heater largely.

図15(b)は熱風ヒータが基板上を加熱処理している状態を示す。基板1と熱風ヒータ間の距離mは、あらかじめ最適な加熱条件となるように設定される。熱風ヒータの待機位置から処理位置までの降下量をMとした場合、前述の基板たわみ補正量ΔZを考慮すると、熱風ヒータは待機位置からM+ΔZだけ降下させればよいということになる。   FIG. 15B shows a state where the hot air heater heats the substrate. The distance m between the substrate 1 and the hot air heater is set in advance so as to be an optimum heating condition. Assuming that the amount of descent from the standby position of the hot air heater to the processing position is M, considering the substrate deflection correction amount ΔZ described above, the hot air heater only needs to be lowered from the standby position by M + ΔZ.

加熱処理すべき座標位置は基板ごとに異なり、ある決まった座標とはならない。このため、基板支持部材5に片持ち支持された基板1の突き出し量、基板支持部材5と熱風ヒータとの間隔、加熱処理座標等の条件の組合せにより、基板たわみ補正量は異なる値となる。   The coordinate position to be heat-treated is different for each substrate, and is not a fixed coordinate. For this reason, the substrate deflection correction amount varies depending on the combination of conditions such as the protrusion amount of the substrate 1 cantilevered by the substrate support member 5, the distance between the substrate support member 5 and the hot air heater, and the heat treatment coordinates.

そのため、事前に全ての条件を網羅した補正テーブルを作成することは困難であり、通常は、熱風ヒータ中心位置(=加熱処理位置)をいくつかの領域に分け、例えば、k1≦Xh≦k2のときΔZ=ΔZk12 として運用される。   For this reason, it is difficult to create a correction table that covers all the conditions in advance. Usually, the hot air heater center position (= heat treatment position) is divided into several regions, for example, k1 ≦ Xh ≦ k2. Is operated as ΔZ = ΔZk12.

このように、熱処理すべき基板座標における基板支持部材5上の基板高さと、該基板1座標位置の基板高さとの差分量を熱風ヒータの高さ補正量ΔZとする補正テーブルを作成し、この補正テーブルに従って、基板1と熱風ヒータとの距離を制御することにより、加熱処理位置の基板1と熱風ヒータ間の距離を、基板1のどの位置においてもほぼ一定に保つことができる。その結果、基板加熱温度を目標とする設定値に管理することができ、加熱後の熱硬化性部材の高品質化を図ることが可能となる。   In this way, a correction table is created in which the difference between the substrate height on the substrate support member 5 at the substrate coordinates to be heat-treated and the substrate height at the substrate 1 coordinate position is the height correction amount ΔZ of the hot air heater. By controlling the distance between the substrate 1 and the hot air heater according to the correction table, the distance between the substrate 1 at the heat treatment position and the hot air heater can be kept almost constant at any position on the substrate 1. As a result, the substrate heating temperature can be managed to a target set value, and the quality of the thermosetting member after heating can be improved.

基板1上に塗布された熱硬化性樹脂を焼成、乾燥させるために、基板1を加熱手段2である熱風ヒータにて加熱させるわけであるが、加熱されるのは熱硬化性樹脂周辺部のみであり、熱風ヒータ形状、吐出熱風風量などのヒータ条件によっては、100mmほど離れた部分の基板1はほとんど温度上昇がない。基板1の温度は、熱硬化性樹脂の種類や加熱プロセスにより異なるが、300℃以上の高温になる場合もある。加熱された部分の熱膨張量は大きいが、温度上昇が小さい周辺領域の熱膨張量は小さい。このため、熱膨張量の大きい加熱領域のみがお碗状に反る。図16(a)に加熱前後の基板膨張の状態を示す。ここでは、基板1が自由に変形できるように支持されているとする。   In order to bake and dry the thermosetting resin applied on the substrate 1, the substrate 1 is heated by a hot air heater as the heating means 2, but only the periphery of the thermosetting resin is heated. Depending on the heater conditions such as the shape of the hot air heater and the amount of discharged hot air, the temperature of the substrate 1 at a portion separated by about 100 mm hardly increases. Although the temperature of the board | substrate 1 changes with the kind of thermosetting resin, and a heating process, it may become 300 degreeC or more high temperature. Although the thermal expansion amount of the heated portion is large, the thermal expansion amount of the peripheral region where the temperature rise is small is small. For this reason, only the heating region having a large thermal expansion amount warps in a bowl shape. FIG. 16A shows the state of substrate expansion before and after heating. Here, it is assumed that the substrate 1 is supported so as to be freely deformable.

熱風ヒータにて基板表面を加熱した場合、熱風ヒータ側の基板表面温度は反対側の表面温度よりも高い。加熱による基板1の熱膨張による反りは、加熱前の基板1に反りがないとした場合、加熱温度が高い熱風ヒータ側の基板1の伸びが大きいため、通常、基板1は熱風ヒータ側に凸形状に反る。   When the substrate surface is heated by the hot air heater, the substrate surface temperature on the hot air heater side is higher than the surface temperature on the opposite side. The warpage due to the thermal expansion of the substrate 1 due to heating is that if the substrate 1 before heating is not warped, the substrate 1 on the hot air heater side having a high heating temperature has a large elongation. Warp in shape.

一方、加熱前の基板1に予めソリがあった場合、熱風ヒータ側凸形状に反るとは限らない。その反り方向は図16(a)に示す熱風ヒータ側凸形状に反る場合もあれば、図16(b)に示す熱風ヒータと逆側凸形状に反る場合もある。そのソリ方向に最も影響を与えているのは、加熱開始時の基板1のソリ方向と、基板1の固定支持方法である。ここでは、基板1は加熱時のソリ方向にほとんど影響を与えないように支持されているものとする。   On the other hand, when the substrate 1 before heating is warped in advance, it does not always warp the hot air heater side convex shape. The warping direction may be warped in the convex shape on the hot air heater side shown in FIG. 16A, or may be warped in the convex shape on the opposite side to the hot air heater shown in FIG. It is the warping direction of the substrate 1 at the start of heating and the method of fixing and supporting the substrate 1 that has the greatest influence on the warping direction. Here, it is assumed that the substrate 1 is supported so as to hardly affect the warping direction during heating.

図17(a)は、加熱開始時に基板1がわずかながら熱風ヒータ側(上側)凸形状に反った状態を示す。基板1上方から熱風ヒータによりこの基板1を加熱した場合、加熱された基板1は、図17(b)に示すように熱風ヒータ側凸形状に大きく反る。熱風ヒータ側凸形状に反る現象は、加熱開始時にソリがない場合と同様である。   FIG. 17A shows a state where the substrate 1 is slightly warped at the hot air heater side (upper side) convex shape at the start of heating. When the substrate 1 is heated from above the substrate 1 with a hot air heater, the heated substrate 1 warps greatly in a convex shape on the hot air heater side as shown in FIG. The phenomenon of warping the hot air heater side convex shape is the same as when there is no warp at the start of heating.

図17(c)は、加熱開始時に基板1がわずかながら熱風ヒータと逆側(下側)凸形状に反った状態を示す。基板1上方から熱風ヒータによりこの基板1を加熱した場合、加熱された基板1は、図17(d)に示すように熱風ヒータと逆側(下側)凸形状に大きく反る。前述の加熱前の基板1にソリがない場合、及び、基板1がわずかながら熱風ヒータ側(上側)凸形状に反った場合と、加熱による基板1のソリ方向は逆である。   FIG. 17C shows a state in which the substrate 1 is slightly warped at the opposite side (lower side) of the hot air heater at the start of heating. When the substrate 1 is heated from above the substrate 1 with a hot air heater, the heated substrate 1 is greatly warped in a convex shape opposite to the hot air heater (lower side) as shown in FIG. The warp direction of the substrate 1 by heating is opposite to the case where the substrate 1 before heating has no warp and the case where the substrate 1 slightly warps in the convex shape on the hot air heater side (upper side).

つまり、加熱前の基板1のソリの状況は加熱後のソリの方向に大きく影響を与える。通常、基板1自身には大なり小なりソリがある上、基板1の支持の仕方により新たなソリが発生する。   That is, the state of warping of the substrate 1 before heating greatly affects the direction of warping after heating. Usually, the substrate 1 itself has a greater or lesser warp, and a new warp is generated depending on how the substrate 1 is supported.

ところで、熱風ヒータによる基板加熱時、基板1の加熱温度は、基板1と熱風ヒータとの距離によって大きく変わる。基板1と熱風ヒータ間距離がHの場合の基板加熱温度をTとすると、加熱により基板1が熱風ヒータ側凸形状に反る場合、両者間の距離はソリの大きさΔH1だけ縮まりH−ΔH1となるため、基板表面温度はT+ΔT1へと上昇する。一方、加熱により基板1が熱風ヒータ側と逆側に形状に反る場合、両者間の距離はソリの大きさΔH2だけ広がりH+ΔH2となるため、基板表面温度はT−ΔT2へと降下する。このように、加熱時のソリの方向により基板温度はT+ΔT1からT−ΔT2の間でばらつき、加熱条件が一定しない。そのため、加熱後の熱硬化性部材の高品質化を図ることができない。   By the way, when the substrate is heated by the hot air heater, the heating temperature of the substrate 1 varies greatly depending on the distance between the substrate 1 and the hot air heater. Assuming that the substrate heating temperature when the distance between the substrate 1 and the hot air heater is H is T, when the substrate 1 is warped in the convex shape on the hot air heater side due to heating, the distance between the two is reduced by the warp size ΔH1 and H−ΔH1. Therefore, the substrate surface temperature rises to T + ΔT1. On the other hand, when the substrate 1 warps in the shape opposite to the hot air heater side due to heating, the distance between the two increases by the warp size ΔH2 and becomes H + ΔH2, so that the substrate surface temperature falls to T−ΔT2. Thus, the substrate temperature varies between T + ΔT1 and T−ΔT2 depending on the direction of warping during heating, and the heating conditions are not constant. Therefore, quality improvement of the thermosetting member after a heating cannot be achieved.

図18は、基板1上方からの熱風ヒータにより加熱する際、加熱時の基板1が熱風ヒータ側凸形状に反るように、加熱開始時の基板1を支持した状態を示す。基板1は搬送ローラ8上に載っている。基板支持部材5の基板搭載面高さは、搬送ローラ8基板搭載面より若干量上方位置に設定されているため、基板支持部材5によって支持された基板1は、わずかではあるが上凸方向に反っている。この状態の基板1が、上方から熱風ヒータにて加熱されると、熱風ヒータ側凸形状に大きく反る。   FIG. 18 shows a state in which the substrate 1 at the start of heating is supported so that the substrate 1 at the time of heating warps the convex shape on the hot air heater side when heated by the hot air heater from above the substrate 1. The substrate 1 is placed on the transport roller 8. Since the substrate mounting surface height of the substrate support member 5 is set slightly above the transport roller 8 substrate mounting surface, the substrate 1 supported by the substrate support member 5 is slightly upwardly convex. Warped. When the substrate 1 in this state is heated from above by a hot air heater, the hot air heater side is greatly warped.

図19は、加熱前の基板支持部材5の基板搭載面高さが、搬送ローラ8基板搭載面より下方に位置設定された状態を示す。リング状の基板支持部材5にて基板1は支持されてはいるが、熱風ヒータに対向した基板支持部材5中央部は、わずかに下側凸形状に反っている。この状態の基板1が、上方から熱風ヒータにて加熱されると、熱風ヒータと逆側(下側)凸形状に大きく反る。   FIG. 19 shows a state in which the substrate mounting surface height of the substrate support member 5 before heating is set below the transport roller 8 substrate mounting surface. Although the substrate 1 is supported by the ring-shaped substrate support member 5, the central portion of the substrate support member 5 facing the hot air heater is slightly warped in a downward convex shape. When the substrate 1 in this state is heated from above by a hot air heater, it is greatly warped in a convex shape opposite to the hot air heater (lower side).

同じ基板支持部材5を用いて基板1を支持する場合においても、加熱処理部の搬送ローラ8間隔、基板支持部材5の大きさ、基板支持高さ等の条件によって、基板1のソリ方向は影響を受ける。このため、加熱時の基板1のソリを一定方向に合わせる場合、必要な基板領域内において、基板支持部材5に支持された基板1のソリが全て一定方向となっているか、予め確認しておく必要がある。   Even when the substrate 1 is supported using the same substrate support member 5, the warping direction of the substrate 1 is affected by conditions such as the distance between the conveyance rollers 8 of the heat treatment unit, the size of the substrate support member 5, and the substrate support height. Receive. For this reason, when the warp of the substrate 1 at the time of heating is aligned in a certain direction, it is confirmed in advance whether all the warpage of the substrate 1 supported by the substrate support member 5 is in a certain direction within the necessary substrate region. There is a need.

このように、加熱処理すべき基板座標位置での基板を、基板1上方からの熱風ヒータによる加熱により、常に上凸形状に反るよう基板支持部材5高さを設定しておくことにより、加熱時の基板1と熱風ヒータの間隔をH−ΔH1、基板表面温度をT+ΔT1とすることが可能となる。その結果、加熱条件が安定し、加熱後の熱硬化性部材の高品質化を図ることができる。   In this way, by heating the substrate at the substrate coordinate position to be heat-treated by the hot air heater from above the substrate 1, the substrate support member 5 height is set so that the substrate support member 5 always warps upward. At this time, the distance between the substrate 1 and the hot air heater can be set to H-ΔH1, and the substrate surface temperature can be set to T + ΔT1. As a result, the heating conditions are stabilized, and the quality of the thermosetting member after heating can be improved.

なお、本実施の形態においては、加熱時の基板1が熱風ヒータ側(上側)凸形状に反ることとした。これはソリのない基板1の加熱とソリ方向が同じであり、基板1のソリ現象として自然であるためである。ただし、必要であれば、上述のように加熱により下凸形状に反るよう基板支持高さを設定することも可能である。   In the present embodiment, the substrate 1 at the time of heating is warped in a convex shape on the hot air heater side (upper side). This is because heating of the substrate 1 without warping is the same as the warping direction, which is natural as a warping phenomenon of the substrate 1. However, if necessary, it is also possible to set the substrate support height so as to warp the downward convex shape by heating as described above.

なお、今回開示した上記実施の形態はすべての点で例示であって、限定的な解釈の根拠となるものではない。したがって、本発明の技術範囲は、上気した実施の形態のみによって解釈されるものではなく、特許請求の範囲の記載に基づいて画定される。また、特許請求項の範囲と均等の意味、及び、請求内での全ての変更が含まれる。   In addition, the said embodiment disclosed this time is an illustration in all the points, Comprising: It does not become the basis of limited interpretation. Therefore, the technical scope of the present invention should not be interpreted only by the above-described embodiments, but is defined based on the description of the claims. Moreover, the meaning equivalent to the range of a claim and all the changes within a claim are included.

1 基板
2 加熱手段(熱風ヒータ)
3 冷却ノズル
4 ユニット保持部材
5 基板支持部材
6 アライメント機構
61 アライメントコロ
62 エアシリンダー
7 基板搬送用枠体
8 搬送コロ
9 排気管
1 Substrate 2 Heating means (hot air heater)
DESCRIPTION OF SYMBOLS 3 Cooling nozzle 4 Unit holding member 5 Substrate support member 6 Alignment mechanism 61 Alignment roller 62 Air cylinder 7 Substrate conveyance frame 8 Conveyance roller 9 Exhaust pipe

Claims (4)

基板を局所的に加熱する装置であって、
前記基板の加熱処理領域近傍を下方より基板に接触させ支持する基板支持部材と、
前記基板の加熱対象となる局所位置に前記基板の上方より熱風を噴射して加熱する加熱手段とを有し、
基板処理座標領域ごとに、前記加熱手段の熱風を噴射する座標と、
前記基板支持部材の座標との相対位置関係を設定し、
前記加熱手段の座標と、前記基板支持部材の座標とを独立して位置制御することを特徴とした局所加熱装置。
An apparatus for locally heating a substrate,
A substrate support member for supporting the substrate in the vicinity of the heat treatment region of the substrate from below,
Heating means for injecting hot air from above the substrate and heating the local position to be heated of the substrate;
Coordinates for injecting hot air from the heating means for each substrate processing coordinate area,
Set a relative positional relationship with the coordinates of the substrate support member,
A local heating apparatus, wherein the coordinates of the heating means and the coordinates of the substrate support member are independently controlled.
前記基板を支持する前記基板支持部材の支持領域より外側に、前記加熱手段の座標を配置できることを特徴とした請求項1記載の局所加熱装置。   The local heating apparatus according to claim 1, wherein the coordinates of the heating unit can be arranged outside a support region of the substrate support member that supports the substrate. 前記基板支持部材上における基板上面位置の高さと、
前記加熱手段による加熱位置における基板上面位置の高さとの差分量を、
前記加熱手段の噴出し位置の高さ補正量として前記加熱手段の高さを制御することを特徴とした請求項2記載の局所加熱装置。
A height of a substrate upper surface position on the substrate support member;
The difference between the height of the substrate upper surface position at the heating position by the heating means,
The local heating apparatus according to claim 2, wherein the height of the heating unit is controlled as a height correction amount of the ejection position of the heating unit.
前記基板支持部材の高さを設定することで前記基板の加熱処理による反り方向を一定方向にすることを特徴とした請求項1記載の局所加熱装置。   The local heating apparatus according to claim 1, wherein a warping direction of the substrate by heat treatment is set to a constant direction by setting a height of the substrate support member.
JP2009135884A 2009-06-05 2009-06-05 Local heating device Expired - Fee Related JP4637250B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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