JP4630209B2 - Semiconductor laser module and method for manufacturing semiconductor laser module - Google Patents

Semiconductor laser module and method for manufacturing semiconductor laser module Download PDF

Info

Publication number
JP4630209B2
JP4630209B2 JP2006075694A JP2006075694A JP4630209B2 JP 4630209 B2 JP4630209 B2 JP 4630209B2 JP 2006075694 A JP2006075694 A JP 2006075694A JP 2006075694 A JP2006075694 A JP 2006075694A JP 4630209 B2 JP4630209 B2 JP 4630209B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
metal material
alloy
joining
laser module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006075694A
Other languages
Japanese (ja)
Other versions
JP2007251067A (en
Inventor
政義 関
亮介 谷津
直樹 築地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
Original Assignee
THE FURUKAW ELECTRIC CO., LTD.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by THE FURUKAW ELECTRIC CO., LTD. filed Critical THE FURUKAW ELECTRIC CO., LTD.
Priority to JP2006075694A priority Critical patent/JP4630209B2/en
Publication of JP2007251067A publication Critical patent/JP2007251067A/en
Application granted granted Critical
Publication of JP4630209B2 publication Critical patent/JP4630209B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は、光通信分野で主に使用される光半導体素子や半導体レーザ素子などをマウントする半導体レーザモジュールおよび半導体レーザモジュールの製造方法に関する。
The present invention relates to a semiconductor laser module for mounting an optical semiconductor element or a semiconductor laser element mainly used in the field of optical communication, and a method for manufacturing the semiconductor laser module .

光通信の使用される光半導体素子や半導体レーザ素子は、図２（イ）に示されるような同軸型の半導体レーザモジュールや、（ロ）に示されるバタフライタイプ（表面実装型）の半導体レーザモジュールの形で供与されている（特許文献１参照）。
図２（イ）の半導体レーザモジュール２０では、光半導体素子４ａが載置されたステム５と直結しているキャップ１ａと、光半導体素子４から発せられる光を集光するレンズ７を保持するレンズホルダ２が接合されている。
図２（ロ）の半導体レーザモジュール２０では、半導体レーザ素子４ｂを載置したベース１ｂと、半導体レーザ素子４ｂからの発せられる光を集光するレンズ７を保持するレンズホルダ２が、その底面で接合されている、 Optical semiconductor elements and semiconductor laser elements used for optical communication include coaxial type semiconductor laser modules as shown in FIG. 2A and butterfly type (surface mount type) semiconductor laser modules as shown in FIG. (See Patent Document 1).
In the semiconductor laser module 20 of FIG. 2A, a lens that holds a cap 1a that is directly connected to the stem 5 on which the optical semiconductor element 4a is placed, and a lens 7 that condenses the light emitted from the optical semiconductor element 4. The holder 2 is joined.
In the semiconductor laser module 20 of FIG. 2B, the base 1b on which the semiconductor laser element 4b is placed and the lens holder 2 that holds the lens 7 that collects the light emitted from the semiconductor laser element 4b are formed on the bottom surface. Joined,

このような半導体レーザモジュール２０において、半導体レーザ素子を載置するベース１ｂ、および半導体レーザ素子４ｂや光半導体素子４ａを封止するキャップ１ａなどの材料としては、封止性や素子に対する熱膨張特性を考慮してＦｅ−Ｎｉ−Ｃｏ系合金（以後、第一の金属材料と称す）が主に利用されている。   In such a semiconductor laser module 20, materials such as the base 1b on which the semiconductor laser element is mounted and the cap 1a for sealing the semiconductor laser element 4b and the optical semiconductor element 4a are used as sealing properties and thermal expansion characteristics with respect to the element. In consideration of the above, an Fe—Ni—Co alloy (hereinafter referred to as a first metal material) is mainly used.

一方、レンズホルダ２に使われる材料は、レンズ７を正しい位置にマウントし、その使用中、マウントした位置を常時保持しなくてはならず、その為には、レンズ形状に合わせた精密なレンズホルダ２を作製できる快削性に優れる金属材料が用いられる。従来、Ｓ元素、Ｐｂ元素及びＴｅ元素を添加することで快削性を大きく向上させた耐熱性に優れるフェライト系ステンレス鋼であるＦｅ−Ｃｒ−Ｓ−Ｐｂ−Ｔｅ系合金（以後、第二の金属材料と称す）が使われてきている。   On the other hand, the material used for the lens holder 2 has to mount the lens 7 at the correct position and keep the mounted position at all times during its use. A metal material excellent in free-cutting property capable of producing the holder 2 is used. Conventionally, Fe-Cr-S-Pb-Te alloy (hereinafter referred to as second alloy), which is a ferritic stainless steel with excellent heat resistance, which is greatly improved in free machinability by adding S element, Pb element and Te element. Metallic materials) have been used.

上記レンズホルダ２と、ベース１ｂ或いはキャップ１ａは、両者を正確な位置で組み合わせて、ＹＡＧレーザなどによるスポット溶接を用いて、互いの金属材料を溶融して接合される。   The lens holder 2 and the base 1b or the cap 1a are joined together by melting the metal materials of each other using spot welding with a YAG laser or the like by combining them at an accurate position.

特開平０５−２０６５２２号公報JP 05-206522 A

しかしながら、従来、レンズホルダに用いられている第二の金属材料と、ベース或いはキャップに用いられている第一の金属材料の組合せによる接合では、接合の際にＹＡＧレーザの熱により溶け合い接合界面に合金部を形成するが、第一の金属材料中のＮｉ元素と第二の金属材料中のＳ元素、Ｐｂ元素およびＴｅ元素が、レーザ溶接による溶融後の凝固過程において結晶粒界に偏析して低融点部となり凝固割れを生じさせてしまうことがあり、この割れが信頼性評価試験として印加される温度サイクルによって進行してレンズホルダの位置を変化させ、結果として光軸ズレを引き起こし、信頼性を大きく損なわせる場合がある。 However, in the past, when the second metal material used for the lens holder and the first metal material used for the base or the cap are combined, the YAG laser heats during the bonding to form a bonding interface. An alloy part is formed, but Ni element in the first metal material and S element, Pb element and Te element in the second metal material are segregated at the grain boundary in the solidification process after melting by laser welding. It may become a low melting point part and cause solidification cracking, and this crack progresses by the temperature cycle applied as a reliability evaluation test and changes the position of the lens holder, resulting in optical axis misalignment and reliability. May be greatly impaired.

そこで、前記問題に鑑み本発明の目的は、レーザ溶接による接合において、低融点部を生じさせること無く接合が行われ、その接合の信頼性をより向上させた半導体レーザモジュールを提供するものである。   In view of the above problems, an object of the present invention is to provide a semiconductor laser module in which joining is performed without causing a low melting point portion in joining by laser welding, and the reliability of the joining is further improved. .

前記目的を達成すべく請求項１記載の発明は、第一の金属材料からなる半導体レーザ素子を載置するベース或いは半導体レーザ素子を納める封止部材と第三の金属材料からなる接合部材とを接合し、さらに前記半導体レーザ素子から発せられる光を導くレンズを保持する第二の金属材料からなるレンズホルダを、第三の金属材料からなる接合部材と接合して形成する半導体レーザモジュールであって、前記第一の金属材料が、Ｆｅ−Ｎｉ−Ｃｏ系合金で、前記第二の金属材料が、Ｐｂ元素、Ｔｅ元素およびＳ元素が添加され、且つＮｉ元素が不可避不純物濃度にあるフェライト系ステンレス合金で、前記第三の金属材料が、Ｎｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素が不可避不純物濃度にあるフェライト系ステンレス合金、であることを特徴とする半導体レーザモジュールである。
In order to achieve the above object, the invention according to claim 1 includes a base on which the semiconductor laser element made of the first metal material is placed or a sealing member for housing the semiconductor laser element and a joining member made of the third metal material. bonded, a further lens holder comprising a second metal material for holding the lens for guiding the light emitted from the semiconductor laser element, a semiconductor laser module is formed by bonding a bonding member made of a third metal material The ferritic stainless steel in which the first metal material is an Fe-Ni-Co alloy, the second metal material is added with a Pb element, a Te element, and an S element, and the Ni element has an inevitable impurity concentration. An alloy, wherein the third metal material is a ferritic stainless alloy in which Ni element, Pb element, Te element and S element are in an inevitable impurity concentration. Is a semiconductor laser module to be.

請求項２記載の発明は、Ｆｅ−Ｎｉ−Ｃｏ系合金からなる半導体レーザ素子を載置するベース或いは半導体レーザ素子を納める封止部材と、Ｐｂ元素、Ｔｅ元素およびＳ元素が添加され、且つＮｉ元素が不可避不純物濃度にある快削性に優れるフェライト系ステンレス合金からなる前記半導体レーザ素子から発せられる光を導くレンズを保持するレンズホルダとの合金の溶融を伴う接合方法であって、 その接合面に、Ｎｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素が不可避不純物濃度にあるフェライト系ステンレス合金からなる接合部材を設け、前記ベース或いは封止部材と接合部材間および前記レンズホルダと接合部材間を溶融して接合することを特徴とする半導体レーザモジュールの接合方法である。
According to a second aspect of the present invention, there is added a base on which a semiconductor laser element made of an Fe-Ni-Co-based alloy is placed or a sealing member that houses a semiconductor laser element, a Pb element, a Te element, and an S element, and Ni A joining method involving melting of an alloy with a lens holder that holds a lens that guides light emitted from the semiconductor laser element, which is made of a ferritic stainless steel alloy that has an inevitable impurity concentration and has excellent free-cutting properties. Are provided with a joining member made of a ferritic stainless alloy in which Ni element, Pb element, Te element and S element are inevitable impurity concentrations, and the base or sealing member and the joining member and the lens holder and the joining member are melted. And a semiconductor laser module bonding method.

請求項３記載の発明は、半導体レーザ素子から発せられる光を導くレンズを保持し、第一の金属材料であるＦｅ−Ｎｉ−Ｃｏ系合金からなる半導体レーザ素子を載置するベース或いは半導体レーザ素子を納める封止部材とレーザ溶接で接合される第二の金属材料であるＰｂ元素、Ｔｅ元素およびＳ元素が添加され、且つＮｉ元素が不可避不純物濃度にあるフェライト系ステンレス合金からなるレンズホルダを有する半導体レーザモジュールであって、前記レンズホルダの前記ベース或いは封止部材との接合面に、第三の金属材料からなるＮｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素を不可避不純物濃度含むフェライト系ステンレス合金が接合部材として設けられていることを特徴とする半導体レーザモジュールである。 According to a third aspect of the present invention, there is provided a base or semiconductor laser element for holding a lens for guiding light emitted from a semiconductor laser element and mounting a semiconductor laser element made of an Fe-Ni-Co alloy that is a first metal material second Pb element is a metallic material to be joined by laser welding the sealing member to pay, it is added Te elements and S elements, and Ni element has a lens holder made of ferritic stainless steel alloy in the unavoidable impurities concentration A ferritic stainless alloy comprising a semiconductor element and an inevitable impurity concentration of a Ni element, a Pb element, a Te element, and an S element made of a third metal material on a joint surface of the lens holder with the base or sealing member There is a semiconductor laser module, characterized in that provided as the bonding member.

以上のように本発明によれば、従来レーザ溶接のような金属の溶融を伴う接合方法において、生じてしまう低融点部を生じることなく接合ができ、結果として信頼性に優れた半導体レーザモジュールを提供するもので、工業上顕著な効果を奏するものである。   As described above, according to the present invention, in a conventional joining method that involves melting of metal such as laser welding, joining can be performed without producing a low melting point portion, resulting in a highly reliable semiconductor laser module. It is provided and has an industrially significant effect.

以下に図を参照して本発明を詳細に説明する。
図１（イ）、（ロ）は異なる形態の本発明に係る半導体レーザモジュール２０を示す断面図である。
図１（イ）では、第一の金属材料からなるキャップ１ａと、第二の金属材料からなるレンズホルダ２の接合面に第三の金属材料からなるリング状の接合部材３ａを設け、第一の金属材料と第二の金属材料が直接接合せずに、第一の金属材料と第三の金属材料の接合、第二の金属材料と第三の金属材料の接合というように、第三の金属材料からなる接合部材を介して、第一の金属材料からなるキャップ１ａと第二の金属材料からなるレンズホルダ２を接合する。 Hereinafter, the present invention will be described in detail with reference to the drawings.
FIGS. 1A and 1B are cross-sectional views showing semiconductor laser modules 20 according to the present invention in different forms.
In FIG. 1A, a ring-shaped joining member 3a made of a third metal material is provided on the joining surface of a cap 1a made of a first metal material and a lens holder 2 made of a second metal material. The metal material and the second metal material are not directly joined, the first metal material and the third metal material are joined, the second metal material and the third metal material are joined, and so on. The cap 1a made of the first metal material and the lens holder 2 made of the second metal material are joined via the joining member made of the metal material.

図１（ロ）に示される半導体レーザモジュール２０においても同様に、半導体レーザ素子４ｂが載置される第一の金属材料からなるベース１ｂとレンズホルダ２を、第三の金属材料からなる接合部材３ｂを介して接合するものである。 なお、第二の金属材料からなるレンズホルダ２と第三の金属材料からなる接合部材３ａ、３ｂとをあらかじめ接合してなるレンズホルダなど、第一の金属材料からなるキャップ１ａやベース１ｂとの接合面に第三の金属材料を設けたレンズホルダを用意し、これを第三の金属材料の箇所において第一の金属材料からなるキャップ１ａ又はベース１ｂに接合してもよい。
図１（イ）、（ロ）において、６はリード、８は金属スリーブ、９は金属フェルール、１０は光ファイバ、１２はパッケージ、１３はペルチェ素子を表している。 Similarly, in the semiconductor laser module 20 shown in FIG. 1B, the base 1b made of the first metal material and the lens holder 2 on which the semiconductor laser element 4b is placed are joined to the joining member made of the third metal material. It joins via 3b. In addition, the cap 1a and the base 1b made of the first metal material, such as a lens holder obtained by previously joining the lens holder 2 made of the second metal material and the joining members 3a and 3b made of the third metal material, A lens holder provided with a third metal material on the joining surface may be prepared, and this may be joined to the cap 1a or the base 1b made of the first metal material at the third metal material.
1A and 1B, 6 is a lead, 8 is a metal sleeve, 9 is a metal ferrule, 10 is an optical fiber, 12 is a package, and 13 is a Peltier element.

本発明の骨子は、半導体レーザモジュール２０のレンズホルダ２と、素子と繋がっているベース１ｂ或いはキャップ１ａとの接合において、ベース１ｂ或いはキャップ１ａに用いられるＮｉ元素を含む第一の金属材料とレンズホルダ２に使用するＳ元素、Ｐｂ元素やＴｅ元素を含んで、快削性に優れる第二の金属材料とを、レーザ溶接のような材料の溶融を伴う方法により接合を行う際に、その接合界面にＮｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素を含む低融点の脆弱層を形成することなく接合を行うことにあり、第三の金属材料を介して、第一の金属材料と第二の金属材料の両者を直接には接合することなく接合することで、前記低融点の脆弱層の生成を抑制し、半導体レーザモジュール２０の信頼性の低下を防ぐものである。   The essence of the present invention is that the lens and the lens holder 2 of the semiconductor laser module 20 are joined to the base 1b or cap 1a connected to the element, the first metal material containing the Ni element used for the base 1b or cap 1a and the lens. When joining the second metal material containing the S element, Pb element and Te element used in the holder 2 and having excellent free-cutting properties by a method involving melting of the material such as laser welding, the joining is performed. The bonding is performed without forming a low melting point fragile layer containing Ni element, Pb element, Te element and S element at the interface, and the first metal material and the second metal material are connected via the third metal material. By joining both of the metal materials without directly joining them, the generation of the fragile layer having a low melting point is suppressed, and the reliability of the semiconductor laser module 20 is prevented from being lowered.

ここで、用いる第三の金属材料は、ＳＵＳ４３０に代表されるフェライト系ステンレス鋼（Ｆｅ−Ｃｒ系合金）が望ましく、ＪＩＳ Ｇ４３０５−２００５及びＧ４３０４−２００５に規定されるようにＳ元素、Ｐｂ元素、Ｔｅ元素およびＮｉ元素が添加されていないＦｅ−Ｃｒ系合金である。
この第三の金属材料を第一の金属材料と第二の金属材料間に配置してレーザ溶接すると、第一の金属材料と第三の金属材料間では、第三の金属材料にはＰｂ元素、Ｔｅ元素が添加されておらず、Ｓ元素も不可避不純物濃度であることから、第一の金属材料を構成するＮｉ元素と相まって、低融点の脆弱層を形成することはないために、この接合箇所では凝固割れの発生が防止され、信頼性が向上する。 Here, the third metal material to be used is preferably a ferritic stainless steel (Fe—Cr alloy) typified by SUS430, as defined in JIS G4305-2005 and G4304-2005, S element, Pb element, This is an Fe—Cr alloy to which Te element and Ni element are not added.
When this third metal material is placed between the first metal material and the second metal material and laser welding is performed, the third metal material has a Pb element between the first metal material and the third metal material. Since the Te element is not added and the S element has an unavoidable impurity concentration, it does not form a fragile layer having a low melting point in combination with the Ni element constituting the first metal material. The occurrence of solidification cracks is prevented at the location, and the reliability is improved.

更に、第三の金属材料と第二の金属材料間では、両者共に、Ｎｉ元素を含有しておらず、低融点の脆弱層を形成することはなく、従って、接合箇所での凝固割れによる信頼性の低下は引き起こされない。   Furthermore, between the third metal material and the second metal material, both of them do not contain Ni element and do not form a fragile layer having a low melting point. Sexual decline is not caused.

表１に示す成分組成の金属材料を用い、図１（イ）に示す半導体レーザモジュールを作製し、作製直後の接合箇所の走査電子顕微鏡による目視観察と、−４０℃〜８５℃の温度範囲での温度サイクル試験（１００サイクル）を行った後の接合箇所の走査電子顕微鏡による目視観察を行い、接合箇所の形態を観察した。その結果を表２に記す。   Using the metal material of the component composition shown in Table 1, the semiconductor laser module shown in FIG. After performing the temperature cycle test (100 cycles), the joint part was visually observed with a scanning electron microscope, and the form of the joint part was observed. The results are shown in Table 2.

Figure 0004630209
Figure 0004630209

Figure 0004630209
「不良数／試験数で評価」
Figure 0004630209
 “Evaluation by number of defects / number of tests”

表１、表２から明らかなように、本発明に係る半導体レーザモジュールでは、どちらの場合も、接合箇所に割れやクラックはみられず、健全な接合面をしていた。対して、従来のものでは、溶接直後においても割れが発生している試料が見られ、温度サイクル試験後には、その割合が大きくなっているのがわかる。   As is clear from Tables 1 and 2, in both cases, the semiconductor laser module according to the present invention had a sound joint surface without any cracks or cracks being observed at the joints. On the other hand, in the conventional sample, a sample in which cracks are generated immediately after welding is seen, and it can be seen that the ratio increases after the temperature cycle test.

本発明に係る半導体レーザモジュールの断面図で、（イ）は同軸型の半導体レーザモジュール、（ロ）バタフライタイプ（表面実装型）の半導体レーザモジュールである。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a semiconductor laser module according to the present invention, in which (a) is a coaxial type semiconductor laser module and (b) a butterfly type (surface mount type) semiconductor laser module. 従来の半導体レーザモジュールを示す断面図で、（イ）は同軸型の半導体レーザモジュール、（ロ）はバタフライタイプの半導体レーザモジュールである。FIG. 6 is a cross-sectional view showing a conventional semiconductor laser module, in which (a) is a coaxial type semiconductor laser module and (b) is a butterfly type semiconductor laser module.

符号の説明Explanation of symbols

１ａ キャップ（第一の金属材料）
１ｂ ベース（第一の金属材料）
２ レンズホルダ（第二の金属材料）
３ａ 接合部材（第三の金属材料）
３ｂ 接合部材（第三の金属材料）
４ａ 光半導体素子
４ｂ 半導体レーザ素子
５ ステム
６ リード
７ レンズ
８ 金属スリーブ
９ 金属フェルール
１０ 光ファイバ
１２ パッケージ
１３ ペルチェ素子
２０ 半導体レーザモジュール 1a Cap (first metal material)
1b base (first metal material)
2 Lens holder (second metal material)
3a Joining member (third metal material)
3b Joining member (third metal material)
4a Optical semiconductor element 4b Semiconductor laser element 5 Stem 6 Lead 7 Lens 8 Metal sleeve 9 Metal ferrule 10 Optical fiber 12 Package 13 Peltier element 20 Semiconductor laser module

Claims (3)

第一の金属材料からなる半導体レーザ素子を載置するベース或いは半導体レーザ素子を納める封止部材と第三の金属材料からなる接合部材とを接合し、さらに前記半導体レーザ素子から発せられる光を導くレンズを保持する第二の金属材料からなるレンズホルダを、第三の金属材料からなる接合部材と接合して形成する半導体レーザモジュールであって、
前記第一の金属材料が、Ｆｅ−Ｎｉ−Ｃｏ系合金で、
前記第二の金属材料が、Ｐｂ元素、Ｔｅ元素およびＳ元素が添加され、且つＮｉ元素が不可避不純物濃度にあるフェライト系ステンレス合金で、
前記第三の金属材料が、Ｎｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素が不可避不純物濃度にあるフェライト系ステンレス合金、
であることを特徴とする半導体レーザモジュール。 A base on which the semiconductor laser element made of the first metal material is placed or a sealing member for housing the semiconductor laser element and a bonding member made of the third metal material are joined, and light emitted from the semiconductor laser element is further guided. the lens holder comprising a second metal material for holding the lens, a semiconductor laser module is formed by bonding a bonding member made of a third metal material,
The first metal material is an Fe-Ni-Co alloy,
The second metal material is a ferritic stainless alloy in which Pb element, Te element and S element are added, and Ni element is in an unavoidable impurity concentration,
The third metal material is a ferritic stainless alloy in which Ni element, Pb element, Te element and S element are in unavoidable impurity concentrations,
A semiconductor laser module characterized by the above. Ｆｅ−Ｎｉ−Ｃｏ系合金からなる半導体レーザ素子を載置するベース或いは半導体レーザ素子を納める封止部材と、Ｐｂ元素、Ｔｅ元素およびＳ元素が添加され、且つＮｉ元素が不可避不純物濃度にある-フェライト系ステンレス合金からなる前記半導体レーザ素子から発せられる光を導くレンズを保持するレンズホルダとの合金の溶融を伴う接合方法であって、
その接合面に、Ｎｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素が不可避不純物濃度にあるフェライト系ステンレス合金からなる接合部材を設け、前記ベース或いは封止部材と接合部材間および前記レンズホルダと接合部材間を溶融して接合することを特徴とする半導体レーザモジュールの接合方法。 A base on which a semiconductor laser element made of an Fe—Ni—Co-based alloy is mounted or a sealing member that houses the semiconductor laser element, a Pb element, a Te element, and an S element are added, and the Ni element has an inevitable impurity concentration − A joining method involving melting of an alloy with a lens holder that holds a lens that guides light emitted from the semiconductor laser element made of a ferritic stainless alloy,
A joining member made of a ferritic stainless alloy having inevitable impurity concentrations of Ni element, Pb element, Te element and S element is provided on the joining surface, and between the base or the sealing member and the joining member, and between the lens holder and the joining member. A method for joining semiconductor laser modules, comprising melting and joining the gaps. 半導体レーザ素子から発せられる光を導くレンズを保持し、第一の金属材料であるＦｅ−Ｎｉ−Ｃｏ系合金からなる半導体レーザ素子を載置するベース或いは半導体レーザ素子を納める封止部材とレーザ溶接で接合される第二の金属材料であるＰｂ元素、Ｔｅ元素およびＳ元素が添加され、且つＮｉ元素が不可避不純物濃度にあるフェライト系ステンレス合金からなるレンズホルダを有する半導体レーザモジュールであって、前記レンズホルダの前記ベース或いは封止部材との接合面に、第三の金属材料からなるＮｉ元素、Ｐｂ元素、Ｔｅ元素およびＳ元素を不可避不純物濃度含むフェライト系ステンレス合金が接合部材として設けられていることを特徴とする半導体レーザモジュール。
 Laser welding that holds a lens that guides light emitted from a semiconductor laser element, and on which a semiconductor laser element made of an Fe-Ni-Co alloy, which is a first metal material, is placed or a sealing member that houses a semiconductor laser element in a second Pb element is a metallic material to be joined, is added Te elements and S elements, and Ni element is a semiconductor laser module having a lens holder made of ferritic stainless steel alloy in the unavoidable impurities concentration, the A ferritic stainless steel alloy containing Ni element, Pb element, Te element and S element made of a third metal material containing inevitable impurity concentrations is provided as a joining member on the joining surface of the lens holder with the base or sealing member. A semiconductor laser module.
JP2006075694A 2006-03-17 2006-03-17 Semiconductor laser module and method for manufacturing semiconductor laser module Active JP4630209B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006075694A JP4630209B2 (en) 2006-03-17 2006-03-17 Semiconductor laser module and method for manufacturing semiconductor laser module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006075694A JP4630209B2 (en) 2006-03-17 2006-03-17 Semiconductor laser module and method for manufacturing semiconductor laser module

Publications (2)

Publication Number Publication Date
JP2007251067A JP2007251067A (en) 2007-09-27
JP4630209B2 true JP4630209B2 (en) 2011-02-09

Family

ID=38595004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006075694A Active JP4630209B2 (en) 2006-03-17 2006-03-17 Semiconductor laser module and method for manufacturing semiconductor laser module

Country Status (1)

Country Link
JP (1) JP4630209B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013205594A1 (en) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Laser component and method for its production

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03237408A (en) * 1990-02-14 1991-10-23 Alps Electric Co Ltd Production of optical device
JPH09138329A (en) * 1995-06-22 1997-05-27 Hitachi Ltd Optical semiconductor array module and its assembling method as well as packaging structure for external substrate
JPH09197158A (en) * 1996-01-22 1997-07-31 Hitachi Ltd Optical semiconductor module
WO2003056669A1 (en) * 2001-12-26 2003-07-10 Mitsubishi Denki Kabushiki Kaisha Wavelength monitor apparatus, optical module, and optical module assembling method
JP2003215406A (en) * 2002-01-21 2003-07-30 Kyocera Corp Semiconductor laser module and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03237408A (en) * 1990-02-14 1991-10-23 Alps Electric Co Ltd Production of optical device
JPH09138329A (en) * 1995-06-22 1997-05-27 Hitachi Ltd Optical semiconductor array module and its assembling method as well as packaging structure for external substrate
JPH09197158A (en) * 1996-01-22 1997-07-31 Hitachi Ltd Optical semiconductor module
WO2003056669A1 (en) * 2001-12-26 2003-07-10 Mitsubishi Denki Kabushiki Kaisha Wavelength monitor apparatus, optical module, and optical module assembling method
JP2003215406A (en) * 2002-01-21 2003-07-30 Kyocera Corp Semiconductor laser module and its manufacturing method

Also Published As

Publication number Publication date
JP2007251067A (en) 2007-09-27

Similar Documents

Publication Publication Date Title
KR101392060B1 (en) Method for manufacturing spark plug
JP5436213B2 (en) Method and apparatus for coupling optical elements to a frame
JP5124056B1 (en) Laser bonding parts
US10076799B2 (en) Joined body of dissimilar metals and method for producing joined body of dissimilar metals
US9223108B2 (en) Optical module and manufacturing method thereof
JP5800778B2 (en) Bonding method and semiconductor device manufacturing method
EP2554967A1 (en) Pressure-sensitive device and method of welding joint of pressure-sensitive device
JP2007190574A (en) Method of manufacturing aluminum-made heat exchanger
JP4630209B2 (en) Semiconductor laser module and method for manufacturing semiconductor laser module
JP2016142193A (en) Laser ignition plug, and method of manufacturing the same
JP2017058366A (en) Temperature sensor
JP2010247200A (en) Joining method for metal members
JPS616181A (en) Method of soldering ceramic and metal aluminum
JP2005101073A (en) Stem of semiconductor device package and cladding material therefor
JP2007214271A (en) Substrate bonding method and semiconductor device
JP2002253486A (en) Method of soldering optical member of endoscope and metallic frame, soldered structure and endoscope having this soldered structure
JP2003215406A (en) Semiconductor laser module and its manufacturing method
JP3993083B2 (en) Fiber collimator and manufacturing method thereof
JP2010008800A (en) Optical component and optical device
JP2007032465A (en) Lightweight engine valve superior in heat radiation
JP2006210138A (en) Ceramic heater
JP2005165200A (en) Optical device and its manufacturing method
JP3099795B2 (en) Manufacturing method of coupling device for optical module
JPH01167706A (en) Laser welding and assembling method for laser diode module
JP5419780B2 (en) Ferrule for fixing optical fiber and optical fiber fixture using the same

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100518

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100720

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20100720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101102

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101112

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131119

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4630209

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131119

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350