JP4618056B2 - Epoxy resin composition for semiconductor encapsulation and method for producing the same - Google Patents

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation and a method for producing the same.

  In recent years, semiconductor devices have been mainly sealed using an epoxy resin composition because of excellent balance of productivity, cost, reliability, and the like. As semiconductor devices become smaller, thinner, and complicated in structure, epoxy resin compositions for semiconductor encapsulation are required to have lower viscosity, higher strength, and reduced conductive foreign matter. Yes.

  As a method for producing an epoxy resin composition for semiconductor encapsulation, in order to ensure moldability and fluidity of the resin composition, it is pulverized after melt-kneading using a roll kneader or a single screw / biaxial extrusion kneader. It is common to grind using a machine. In the melt kneading step, it works to improve the dispersion of each component and the wetting of the resin component to the surface of the inorganic filler, and further, high temperature kneading and degassing kneading to reduce voids in the molded product called voids. This method removes voids and volatiles. According to the production method including the melt-kneading process as described above, the wear composition of the kneading device or the pulverizing device is advanced by the shearing force at the time of kneading or the impact force at the time of pulverization. The situation is inevitable. However, for the purpose of reducing wear metal contamination, mixing the inorganic filler and the resin component without kneading them results in insufficient dispersion of each component and wetting of the resin component on the surface of the inorganic filler. There has been a problem that the fluidity and moldability of the resin composition at the time of sealing molding of the element are lowered. Under these circumstances, a method for producing an epoxy resin composition in which the dispersibility of each component and the wettability between the inorganic filler and the resin component are good without mixing the conductive foreign matter into the resin composition is unavoidable. Was desired.

  So far, there has been proposed a method in which a resin is coated on the surface of the inorganic filler particles with a kneader that applies external pressing force and the melt kneading is omitted (see, for example, Patent Document 1). However, the kneading process takes a very long time, and the hard inorganic filler is rubbed by an external force, so that there is a problem that the fluidity is lowered due to cracking or chipping of the spherical silica. Also, as a method for coating an inorganic filler with a resin, a proposal has been made to coat and react a resin component after pretreatment with a coupling agent (see, for example, Patent Documents 2 and 3). This causes a problem that fluidity is insufficient when the blending ratio of the inorganic filler is increased.

Japanese Patent No. 2929896 (pages 1-7) Japanese Patent No. 2671727 (pages 1-7) Japanese Patent Laid-Open No. 10-60231 (pages 2 to 5)

  The present invention has been made in order to solve the conventional problems as described above. The object of the present invention is to improve the dispersibility of each component and improve the wetting of the resin component on the surface of the inorganic filler from the outside. An object of the present invention is to provide a method for producing an epoxy resin composition for encapsulating a semiconductor, which is carried out without using a pressing force and does not impair conductive foreign matters without impairing the fluidity and moldability during molding.

The present invention
[1] In the method for producing an epoxy resin composition for semiconductor encapsulation, comprising an epoxy resin (A), a curing agent (B), a curing accelerator (C), and an inorganic filler (D),
Using a stirring and mixing device heated to 130 ° C. or higher, melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D). A first step of obtaining a resin-coated inorganic filler (Y) by coating a part of the molten mixed resin (X) obtained;
A melt-mixed resin (X) obtained by melt-mixing at least one selected from the resin-coated inorganic filler (Y) obtained in the first step and the epoxy resin (A) and the curing agent (B) And a second step of obtaining a resin composition (Z) by mixing with other components including a curing accelerator (C), and an epoxy resin composition for semiconductor encapsulation, Production method,
[2] In the method for producing an epoxy resin composition for semiconductor encapsulation, comprising an epoxy resin (A), a curing agent (B), a curing accelerator (C), and an inorganic filler (D),
Using a stirring and mixing device heated to 130 ° C. or higher, melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D). A first step of obtaining a resin-coated inorganic filler (Y) by coating a part of the molten mixed resin (X) obtained;
A melt-mixed resin (X) obtained by melt-mixing at least one selected from the resin-coated inorganic filler (Y) obtained in the first step and the epoxy resin (A) and the curing agent (B) ) And the second step of obtaining the resin composition (Z) by mixing with other components including the curing accelerator (C),
A method for producing an epoxy resin composition for semiconductor encapsulation, which does not have a step of melt-kneading using a kneader,
[3] In a method for producing an epoxy resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B), a curing accelerator (C), an inorganic filler (D), and a silane coupling agent (E). ,
Using a stirring and mixing device heated to 130 ° C. or higher, at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D), and the silane coupling A first step of obtaining a resin-coated inorganic filler (Y ′) by coating a part of the melt-mixed resin (X ′) obtained by melt-mixing the agent (E);
The resin-coated inorganic filler (Y ′) obtained in the first step, at least one selected from the epoxy resin (A) and the curing agent (B), and the silane coupling agent (E) A second step of obtaining a resin composition (Z ′) by mixing the remaining amount of the melt-mixed resin (X ′) obtained by melt-mixing and other components including the curing accelerator (C) A method for producing an epoxy resin composition for semiconductor encapsulation,
[4] In a method for producing an epoxy resin composition for semiconductor encapsulation, comprising an epoxy resin (A), a curing agent (B), a curing accelerator (C), an inorganic filler (D), and a silane coupling agent (E). ,
Using a stirring and mixing device heated to 130 ° C. or higher, at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D), and the silane coupling A first step of obtaining a resin-coated inorganic filler (Y ′) by coating a part of the melt-mixed resin (X ′) obtained by melt-mixing the agent (E);
The resin-coated inorganic filler (Y ′) obtained in the first step, at least one selected from the epoxy resin (A) and the curing agent (B), and the silane coupling agent (E) A second step of obtaining a resin composition (Z ′) by mixing the remaining amount of the melt-mixed resin (X ′) obtained by melt-mixing and other components including the curing accelerator (C). And
A method for producing an epoxy resin composition for semiconductor encapsulation, which does not have a step of melt-kneading using a kneader,
[5] The total amount of the epoxy resin (A) and the curing agent (B) coated on the surface of the inorganic filler (D) in the first step is 100 parts by weight of the inorganic filler (D). The method for producing an epoxy resin composition for semiconductor encapsulation according to any one of [1] to [4], which is 2 to 10 parts by weight,
[6] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [5], wherein the stirring and mixing device used in the first step is a stirring and mixing device having a propeller-type stirring blade. Manufacturing method,
[7] The stirring / mixing device used in the first step is any one of [1] to [6], which is one selected from the group consisting of a vertical granulator, a high speed mixer, and a Henschel mixer. A method for producing an epoxy resin composition for semiconductor encapsulation,
[8] The semiconductor encapsulation according to any one of [1] to [7], wherein the stirring and mixing device used in the first step is a stirring and mixing device in which inner walls and stirring blades are subjected to wear resistance treatment. Production method for epoxy resin composition,
[9] Further, the resin composition (Z or Z ′) obtained in the second step is further refined using a pulverizer composed of a ceramic member to remove agglomerates. [1] A method for producing an epoxy resin composition for encapsulating a semiconductor according to any one of [8],
[10] The epoxy resin composition for semiconductor encapsulation according to [9 ], wherein the pulverizer used in the third step is one selected from the group consisting of an ACM pulverizer, a jet mill, and a ball mill. Production method,
[11] An epoxy resin composition for semiconductor encapsulation, which is produced by the method for producing an epoxy resin composition for semiconductor encapsulation according to any one of [1] to [10].
It is.

  According to the present invention, it is possible to obtain an epoxy resin composition with extremely little mixing of conductive foreign matters without impairing the fluidity and moldability during molding, which was not obtained with the prior art.

The present invention provides a method for producing an epoxy resin composition for semiconductor encapsulation comprising an epoxy resin (A), a curing agent (B), a curing accelerator (C), and an inorganic filler (D). A melt-mixed resin obtained by melting and mixing at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D) using a heated stirring and mixing device ( A first step of coating a part of X) to obtain a resin-coated inorganic filler (Y), the resin-coated inorganic filler (Y) obtained in the first step, and the epoxy Resin by mixing the remaining amount of melt-mixed resin (X) obtained by melt-mixing at least one selected from resin (A) and curing agent (B) and other components including curing accelerator (C) A second step of obtaining a composition (Z) This is a method for producing an epoxy resin composition for semiconductor encapsulation, whereby the dispersibility of each component and the wetness of the resin component to the surface of the inorganic filler can be achieved without using external pressing force. It is improved and exhibits a remarkable effect that it is possible to obtain an epoxy resin composition with very little mixing of conductive foreign matters without impairing fluidity and moldability during molding.
The present invention will be described in detail below.

  The epoxy resin (A) used in the present invention is a monomer, oligomer or polymer in general having two or more epoxy groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, biphenyl type epoxy resin Bisphenol type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenolmethane type epoxy resin, phenol aralkyl type epoxy resin, phenol biphenyl aralkyl type epoxy resin, naphthol type epoxy resin, alkyl modified Triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol type epoxy resin and the like may be mentioned, and these may be used alone or in combination. Considering moisture resistance reliability as an epoxy resin composition for semiconductor encapsulation, it is preferable that Na ions and Cl ions as ionic impurities are as small as possible, and an epoxy equivalent is preferably 100 to 500 g / eq from the viewpoint of curability. .

  The curing agent (B) used in the present invention is not particularly limited as long as it is cured by reacting with an epoxy resin. For example, phenol novolac resin, cresol novolac resin, triphenolmethane resin, terpene-modified phenol resin , Dicyclopentadiene-modified phenolic resins, naphthol aralkyl resins (including phenylene skeletons and biphenylene skeletons), phenolic resins such as phenol biphenyl aralkyl resins and phenol aralkyl resins, bisphenol compounds such as bisphenol A, maleic anhydride, phthalic anhydride, Examples include acid anhydrides such as pyromellitic anhydride and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone. These may be used alone or in combination. There. Among these curing agents, it is particularly preferable to use a phenol resin, and particularly a phenol resin having a hydroxyl group equivalent of 90 to 250 g / eq from the viewpoint of curability.

  The curing accelerator (C) used in the present invention only needs to accelerate the reaction between the epoxy group of the epoxy resin and the curing agent, and is generally used in an epoxy resin composition that is a sealing material for semiconductor elements. Things can be used. Specific examples include trimethylphosphine, triethylphosphine, tributylphosphine, organic phosphines such as trialkylphosphine, triphenylphosphine, alkyldiphenylphosphine, and dialkylphenylphosphine, each of which is a long-chain alkyl group, tetra-substituted phosphonium compounds, phosphobetaine compounds. And phosphorus atom-containing compounds such as 1,8-diazabicyclo (5,4,0) undecene-7, benzyldimethylamine, and 2-methylimidazole. However, it is not limited to these and may be used alone or in combination. The blending amount of the curing accelerator used in the present invention is preferably 0.1 to 0.6% by weight in the total epoxy resin composition, and if it is less than the lower limit, the intended curability may not be obtained, and the upper limit. If it exceeds 1, the fluidity may be impaired.

  Examples of the inorganic filler (D) used in the present invention include fused silica, spherical silica, crystalline silica, alumina, silicon nitride, aluminum nitride, etc., which are generally used for sealing materials, and are most preferably used. As spherical fused silica. These inorganic fillers may be used alone or in combination. The particle size of the inorganic filler is desirably 150 μm or less in consideration of the filling property to the mold. The filling amount is preferably 84 to 92% by weight, and if it is less than the lower limit, the water absorption amount of the cured product of the epoxy resin composition increases and the strength decreases, so that the solder resistance may be unsatisfactory. Exceeding the value is not preferable because the fluidity is impaired, and there is a risk of causing a problem in moldability.

  The silane coupling agent (E) used in the present invention is not particularly limited, such as epoxy silane, amino silane, ureido silane, mercapto silane, etc., and reacts between the epoxy resin composition and the inorganic filler, and the epoxy resin composition and the inorganic silane coupling agent (E). What is necessary is just to improve the interface strength of a filler. These silane coupling agents may be used alone or in combination. The compounding amount of the silane coupling agent used in the present invention is 0.01 to 1% by weight, preferably 0.05 to 0.8%, particularly preferably 0.1 to 0.6% by weight in the total epoxy resin composition. If it is less than the lower limit, the solder resistance of the semiconductor package may be reduced. On the other hand, if the upper limit is exceeded, the water absorption of the epoxy resin composition increases, and the solder resistance in the semiconductor package may also be lowered, which is not preferable.

  Other than these, brominated epoxy resins, flame retardants such as antimony trioxide, natural waxes such as carnauba wax, synthetic waxes such as polyethylene wax, higher fatty acids such as stearic acid and zinc stearate and metal salts thereof or paraffin Various additives such as a release agent such as carbon black, a colorant such as carbon black, a low stress additive such as silicone oil and silicone rubber, and an inorganic ion exchanger such as bismuth oxide hydrate may be appropriately blended.

  The manufacturing method of the epoxy resin composition for semiconductor encapsulation according to the present invention uses the stirring and mixing device heated to 130 ° C. or higher to form the epoxy resin (A) and the cured resin on the surface of the inorganic filler (D). A first step of obtaining a resin-coated inorganic filler (Y) by coating a part of the melt-mixed resin (X) obtained by melt-mixing at least one selected from the agent (B); Resin-coated inorganic filler (Y) obtained in the first step and melt-mixed resin (X) obtained by melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) And a second step of obtaining a resin composition (Z) by mixing with other components including the curing accelerator (C), preferably without a step of melt-kneading It is. Since an epoxy resin composition for semiconductor encapsulation usually contains a silica powder having a high hardness as a filler, wear of the kneading equipment is generated and proceeds by shearing force during kneading. Therefore, in the manufacturing method of the epoxy resin composition for semiconductor encapsulation, when it has the process of melt-kneading using a kneading machine, there is a possibility that contamination of the wear metal which is a conductive foreign material may increase, which is not preferable.

  In the first step, a melt-mixed resin obtained by melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) as a resin component to be coated on the surface of the inorganic filler (D) Instead of a part of (X), a melt-mixed resin (X ′) obtained by melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) and the silane coupling agent (E) ) Can also be used.

  In the first step, the total amount of the epoxy resin (A) and the curing agent (B) coated on the surface of the inorganic filler (D) is 2 with respect to 100 parts by weight of the inorganic filler (D). It is preferable that it is -10 weight part. If the lower limit is not reached, sufficient coating may not be possible, and if the upper limit is exceeded, dumpling-like lumps may be formed.

  The stirring and mixing device used in the first step is not particularly limited, but a stirring and mixing device having a propeller-type stirring blade is preferable, and more preferable are a vertical granulator, a high speed mixer, a Henschel mixer. Etc. In addition, it is desirable that it can be heated by steam or a heat medium, and the inner wall and the stirring blade are subjected to wear resistance treatment.

  As conditions for the coating treatment in the first step, the temperature in the layer is 130 ° C. or higher, preferably 130 ° C. to 170 ° C. If the lower limit is not reached, the viscosity of the resin component will not be lowered sufficiently, so that there is a risk that the spread to the surface of the inorganic filler will be insufficient and a uniform coating may not be obtained. If the upper limit is exceeded, the resin curing reaction may proceed. . The stirring speed is preferably 300 to 1000 m / min as a peripheral speed. If the value is below the lower limit, the spread becomes insufficient and uniform coating can be achieved. If the value exceeds the upper limit, there is no problem in characteristics, but workability may be deteriorated. The stirring time is preferably 3 to 20 minutes after the resin is charged. If the lower limit value is not reached, the coating may be non-uniform, and if the upper limit value is exceeded, the fluidity may decrease due to the progress of the reaction.

  The mixing apparatus that can be used in the second step is not particularly limited as long as it is an apparatus that can mix two or more materials into a homogeneous state. For example, a ball mill, a Henschel, etc. A mixer, a V blender, a double cone blender, a concrete mixer, a ribbon blender, etc. are mentioned.

In the present invention, the resin composition (Z or Z ′) obtained in the second step is further refined using a pulverizer composed of a ceramic member to remove aggregates. You can also
The pulverizer used in the third step is particularly limited as long as the resin composition (Z or Z ′) obtained in the second step can be refined to remove aggregates. However, it is preferable to use, for example, a fine pulverizer such as an ACM pulverizer (manufactured by Hosokawa Micron), a jet mill, or a ball mill.

  Conventional molding such as transfer molding, compression molding, injection molding, etc., is used to manufacture semiconductor devices by sealing various electronic components such as semiconductor elements using the epoxy resin composition for semiconductor sealing of the present invention. It may be cured by the method.

EXAMPLES Hereinafter, although this invention is demonstrated concretely in an Example, this invention is not limited at all by these Examples.
The blending ratio is parts by weight.
Example 1
Phenol biphenyl aralkyl type epoxy resin (Nippon Kayaku Co., Ltd. NC3000, epoxy equivalent 274, softening point 58 ° C.) 7.4 parts by weight and phenol biphenyl aralkyl resin (Maywa Kasei Co., Ltd., MEH-7851SS, hydroxyl equivalent) 203, softening point 65 ° C.) 5.5 parts by weight is charged into the flask and melt mixed at 130 ° C. for 30 minutes. Thereafter, 0.4 part by weight of γ-glycidylpropyltrimethoxysilane was added, rapidly stirred for 1 minute, extracted into a vat and cooled to obtain a molten mixed resin.
86 parts by weight of spherical fused silica (average particle size 30 μm, specific surface area 2 m ² / g) is charged into a vertical granulator (outer diameter 275 mm) set at 150 ° C. and mixed until the powder temperature reaches 130 ° C. or higher. To do. Here, 4.5 parts by weight of the above melt-mixed resin was mixed for 5 minutes after spraying with a jacketed spray device set at 130 ° C. The rotational speed of the vertical granulator at this time is 740 rpm (circumferential speed 640 m / min). Thereafter, it was extracted and cooled to obtain resin-coated silica.
After mixing 90.5 parts by weight of resin-coated silica, 8.8 parts by weight of the remaining molten mixed resin, 0.2 parts by weight of triphenylphosphine, 0.2 parts by weight of carnauba wax, and 0.3 parts by weight of carbon black using a mixer. Then, it was pulverized using an alumina casing jet mill at an air pressure of 0.6 MPa and a processing speed of 20 kg / hr to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following methods. The evaluation results are shown in Table 1.

Spiral flow: Using a mold according to EMMI-1-66, the epoxy resin composition was molded and measured with a low-pressure transfer molding machine at 175 ° C., molding pressure of 6.9 MPa, and holding time of 120 seconds. Spiral flow is a parameter for fluidity, and the larger the value, the better the fluidity. The unit is cm.
Internal void: A frame in which a Si chip of 13.5 × 13.5 × 0.35 mm is bonded to a 160pQFP (42 alloy frame) with a body size of 28 × 28 × 3.4 mm, a mold temperature of 175 ° C., a pressure holding time of 15 sec, Molding was performed at a curing time of 90 sec and a molding pressure of 9.8 MPa, and the number of voids was measured using an ultrasonic flaw detector.
Conductive foreign matter: 500 ml of acetone was added to 300 g of the resin composition and dissolved, and the mixture was poured onto a 14,000 gauss permanent magnet, and the weight of the magnetized material was measured.

Examples 2-4
Using the raw materials having the same composition as in Example 1, the production amount was evaluated in the same manner as in Example 1 except that the coating amount of the resin component on the spherical fused silica and the coating conditions were as shown in Table 1. The evaluation results are shown in Table 1.
Example 5
A raw material having the same composition as in Example 1 was used, and the production was performed and evaluated in the same manner as in Example 1 except that the coating treatment was performed using a Henschel mixer instead of the vertical granulator. The evaluation results are shown in Table 1.
Comparative Example 1
Using the raw material of the same composition as Example 1, it manufactured similarly to Example 1 and evaluated except having also added the triphenylphosphine which is a hardening accelerator at the time of coating. The evaluation results are shown in Table 1.
Comparative Example 2
Using raw materials of the same composition as in Example 1, mixed at room temperature for 10 minutes with a super mixer, melt-kneaded for 20 minutes with a heated roll at 85 to 95 ° C., cooled and pulverized with an impact pulverizer, and epoxy resin composition Got. The evaluation results are shown in Table 2.
Comparative Example 3
The raw materials having the same composition as in Example 1 were mixed at room temperature with a supermixer for 10 minutes, and the epoxy resin composition was used as it was without being melt-kneaded. The evaluation results are shown in Table 2.
Comparative Example 4
Using the raw materials of the same composition as in Example 1, according to Example 1 of Patent Document 1, coating at room temperature using an edge runner instead of coating at 130 ° C. or more with a vertical granulator, etc. Except that the apparatus and conditions described in 3 were used, they were produced and evaluated in the same manner as in Example 1. The evaluation results are shown in Table 3.

  In each of Examples 1 to 5, fluidity (spiral flow) and moldability (internal void) were good, and there was almost no contamination with conductive foreign matter. In Comparative Example 1 in which a curing accelerator was also added in the step of coating silica with the resin component, the reaction between the epoxy resin and the curing agent progressed in the melt mixing step, resulting in gelation, and the subsequent process could not proceed. became. Moreover, in Comparative Example 2 in which melt kneading was performed using two rolls, although fluidity and moldability were good, there were many conductive foreign matters. Further, in Comparative Example 3 in which only coating at normal temperature and coating treatment or melt kneading at 130 ° C. or higher were not performed, sufficient fluidity could not be obtained, and 160 pQFP for internal void evaluation itself could not be formed. Further, according to Comparative Example 4 in which coating was performed at room temperature using an edge runner instead of coating at 130 ° C. or more with a vertical granulator according to Example 1 of Patent Document 1, both fluidity and moldability were achieved. The result was inferior. As described above, according to the present invention, it is possible to obtain an epoxy resin composition with extremely low mixing of conductive foreign matters without impairing fluidity and moldability during molding, which was not obtained with the prior art. .

Claims (11)

In the method for producing an epoxy resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B), a curing accelerator (C), and an inorganic filler (D),
Using a stirring and mixing device heated to 130 ° C. or higher, melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D). A first step of obtaining a resin-coated inorganic filler (Y) by coating a part of the molten mixed resin (X) obtained;
A melt-mixed resin (X) obtained by melt-mixing at least one selected from the resin-coated inorganic filler (Y) obtained in the first step and the epoxy resin (A) and the curing agent (B) And a second step of obtaining a resin composition (Z) by mixing with other components including a curing accelerator (C), and an epoxy resin composition for semiconductor encapsulation, Production method. In the method for producing an epoxy resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B), a curing accelerator (C), and an inorganic filler (D),
Using a stirring and mixing device heated to 130 ° C. or higher, melt-mixing at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D). A first step of obtaining a resin-coated inorganic filler (Y) by coating a part of the molten mixed resin (X) obtained;
A melt-mixed resin (X) obtained by melt-mixing at least one selected from the resin-coated inorganic filler (Y) obtained in the first step and the epoxy resin (A) and the curing agent (B) ) And the second step of obtaining the resin composition (Z) by mixing with other components including the curing accelerator (C),
The manufacturing method of the epoxy resin composition for semiconductor sealing characterized by not having the process of melt-kneading using a kneader. In the method for producing an epoxy resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B), a curing accelerator (C), an inorganic filler (D), and a silane coupling agent (E),
Using a stirring and mixing device heated to 130 ° C. or higher, at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D), and the silane coupling A first step of obtaining a resin-coated inorganic filler (Y ′) by coating a part of the melt-mixed resin (X ′) obtained by melt-mixing the agent (E);
The resin-coated inorganic filler (Y ′) obtained in the first step, at least one selected from the epoxy resin (A) and the curing agent (B), and the silane coupling agent (E) A second step of obtaining a resin composition (Z ′) by mixing the remaining amount of the melt-mixed resin (X ′) obtained by melt-mixing and other components including the curing accelerator (C) The manufacturing method of the epoxy resin composition for semiconductor sealing characterized by the above-mentioned. In the method for producing an epoxy resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B), a curing accelerator (C), an inorganic filler (D), and a silane coupling agent (E),
Using a stirring and mixing device heated to 130 ° C. or higher, at least one selected from the epoxy resin (A) and the curing agent (B) on the surface of the inorganic filler (D), and the silane coupling A first step of obtaining a resin-coated inorganic filler (Y ′) by coating a part of the melt-mixed resin (X ′) obtained by melt-mixing the agent (E);
The resin-coated inorganic filler (Y ′) obtained in the first step, at least one selected from the epoxy resin (A) and the curing agent (B), and the silane coupling agent (E) A second step of obtaining a resin composition (Z ′) by mixing the remaining amount of the melt-mixed resin (X ′) obtained by melt-mixing and other components including the curing accelerator (C). And
The manufacturing method of the epoxy resin composition for semiconductor sealing characterized by not having the process of melt-kneading using a kneader. The total amount of the epoxy resin (A) and the curing agent (B) coated on the surface of the inorganic filler (D) in the first step is 2 to 100 parts by weight with respect to 100 parts by weight of the inorganic filler (D). The method for producing an epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 4, wherein the content is 10 parts by weight. The method for producing an epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 5, wherein the stirring and mixing device used in the first step is a stirring and mixing device having a propeller-type stirring blade. The epoxy resin for semiconductor encapsulation according to any one of claims 1 to 6, wherein the stirring and mixing device used in the first step is one selected from the group consisting of a vertical granulator, a high speed mixer, and a Henschel mixer. A method for producing the composition. 8. The production of an epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the stirring and mixing device used in the first step is a stirring and mixing device in which an inner wall and a stirring blade are subjected to wear resistance treatment. Method. Furthermore, the resin composition (Z or Z ′) obtained in the second step has a third step of refining the resin composition using a pulverizer composed of a ceramic member to remove aggregates. The manufacturing method of the epoxy resin composition for semiconductor sealing in any one of 8. The method for producing an epoxy resin composition for semiconductor encapsulation according to claim 9 , wherein the pulverizer used in the third step is one selected from the group consisting of an ACM pulverizer, a jet mill, and a ball mill.
An epoxy resin composition for semiconductor encapsulation, which is produced by the method for producing an epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 10.