JP4617846B2 - Semiconductor light emitting device, manufacturing method thereof, and manufacturing method of image display device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device that can be easily electrically connected to an external wiring even if it is a fine semiconductor light emitting element. The present invention also relates to a method for manufacturing a semiconductor light emitting device according to the present invention, and a method for manufacturing an image display device in which the semiconductor light emitting device according to the present invention is arranged.

  In recent years, liquid crystal display devices, plasma display devices, image display devices using organic EL, and the like have been developed as image display devices such as computers and television receivers, and the image display devices are significantly reduced in weight and thickness. As these image display devices, light-emitting diode displays using semiconductor light-emitting elements as light-emitting elements have also been proposed.

  In an image display device using a semiconductor light emitting element, a semiconductor light emitting element that emits blue, green, and red light is disposed on a substrate as one pixel, and light emission of each pixel is performed using a driving method such as active matrix driving or passive matrix driving. To control. In addition, as a method of disposing the semiconductor light emitting element on the substrate, a flip chip bonding method in which an electrode formed on the semiconductor light emitting element is directly connected to a wiring on the substrate can be used. The finer the light emitting element, the more difficult the electrical connection between the semiconductor light emitting element and the wiring formed on the substrate.

  FIG. 7 is a schematic explanatory diagram of an image display device 90 in which a conventional semiconductor light emitting element is arranged. In the semiconductor light emitting device 80, an n-type semiconductor layer 81, an active layer 82, and a p-type semiconductor layer 83 are sequentially stacked, and a negative electrode (not shown) is formed on an end surface of the n-type semiconductor layer 81 that is not in contact with the active layer 82. The positive electrode 85 is formed on the end surface of the p-type semiconductor layer 83 that is not in contact with the active layer 82.

  The image display device 90 includes a substrate 91, a lower layer wiring 93, a transparent electrode 92, a semiconductor light emitting element 80, an insulating layer 94, and an upper layer wiring 95. The substrate 91 is a plate-like member having translucency and flat and rigid enough to hold the components of the image display device 90. The lower layer wiring 93 is a metal wiring layer formed on the substrate 91. The transparent electrode 92 is an electrode layer formed of a material having translucency and conductivity, and is connected to the lower layer wiring 93. Further, the semiconductor light emitting element 80 is disposed on the transparent electrode 92. The insulating layer 94 is an insulating material layer such as a resin, and fixes the semiconductor light emitting element 80 to the substrate 91. The upper layer wiring 95 is a metal wiring layer formed on the insulating layer 94 and the positive electrode layer 85.

  In order to configure the image display device 90 as described above, in order to connect the upper layer wiring 95 to the positive electrode 85, it is necessary to form the via 96 from the upper part of the insulating layer 94 to expose the upper surface of the positive electrode 85. . For this reason, it is necessary to align the positive electrode 85 and the upper layer wiring 95. As the semiconductor light emitting device 80 becomes finer, the connection between the positive electrode 85 and the upper layer wiring 95 becomes more difficult.

Several methods for arranging a semiconductor light emitting element on a substrate on which predetermined wiring is formed have been proposed. For example, an electrode of one conductivity type semiconductor layer and an electrode of a reverse conductivity type semiconductor layer are on the same side. In the semiconductor light emitting device formed in (1), a method is proposed in which bumps are formed on the respective electrodes, and the upper surfaces of these two bumps are made to be the same plane. According to this method, it is said that mounting on a substrate can be easily performed by making the upper surfaces of two bumps the same plane.
JP 2002-118293 A

  As described above, when the electrode formed on the semiconductor light emitting element is directly disposed on the external wiring, the smaller the semiconductor light emitting element is, the more difficult the electrical connection between the electrode formed on the semiconductor light emitting element and the external wiring is. Become. According to the method of Patent Document 1, when a semiconductor light emitting device in which an electrode of one conductivity type semiconductor layer and an electrode of a reverse conductivity type semiconductor layer are formed on the same surface side is mounted on a substrate, the mounting is easier than in the prior art. However, the problem that mounting on a substrate becomes difficult as the semiconductor light emitting element becomes finer cannot be solved. Further, the method of Patent Document 1 cannot be applied to a semiconductor light emitting element in which an electrode of one conductivity type semiconductor layer and an electrode of a reverse conductivity type semiconductor layer are not formed on the same surface side.

  Accordingly, the present invention provides a semiconductor light emitting device capable of improving the reliability of electrical connection between a semiconductor light emitting element and an external wiring even when the semiconductor light emitting element is directly connected to an external wiring. Is an issue. It is another object of the present invention to provide a method for manufacturing a semiconductor device according to the present invention and a method for manufacturing an image display device in which the semiconductor device according to the present invention is arranged.

In order to solve the above problems, a semiconductor light-emitting device according to the present invention includes a semiconductor light-emitting element in which a one-conductivity-type semiconductor layer, an active layer, and a reverse-conductivity-type semiconductor layer are sequentially stacked, and a reverse-conductivity-type semiconductor layer. An electrode formed of a material that can be ohmic-connected to the reverse conductivity type semiconductor layer, an insulating layer provided on the side surface of the semiconductor element and over the electrode, and provided with a via that penetrates the electrode; an electrode in the via; And a bump disposed on the insulating layer to fill the via and having an outermost surface area larger than an opening area of the via . With such a configuration, the reliability of electrical connection between the semiconductor light emitting element and the wiring can be improved.

Further, in order to solve the above problems, a method of manufacturing a semiconductor light-emitting device according to the present invention, a low-temperature buffer layer even without low, the one conductivity type semiconductor layer, an active layer, and opposite conductivity type semiconductor layer sequentially And a step of forming a laminated semiconductor growth layer .
In addition, an insulating material is coated on the upper surface of the semiconductor growth layer and the upper surface of the electrode to form an insulating layer on the reverse conductivity type semiconductor layer of the semiconductor growth layer by a material that can be ohmic-connected to the semiconductor growth layer. Forming a layer.
A step of forming a via in the insulating layer and exposing the upper surface of the electrode; and a step of forming a bump having an outermost surface area larger than an opening area of the via on the exposed upper surface of the electrode and the insulating layer; And a step of dividing the semiconductor growth layer into elements . With such a manufacturing method, the semiconductor light emitting device according to the present invention can be manufactured with high productivity.

In order to solve the above-described problem, a method for manufacturing an image display device according to the present invention includes a surface of an insulating layer made of a thermosetting resin formed on a lower surface of a light-transmitting and insulating first substrate. And a semiconductor light emitting device in which one conductive semiconductor layer, an active layer, and a reverse conductive semiconductor layer are sequentially stacked, and a material formed on the reverse conductive semiconductor layer and capable of ohmic connection with the reverse conductive semiconductor layer. The configured electrode, the reverse conductivity type semiconductor layer and the electrode are covered and an insulating layer provided with a via penetrating the electrode, and the via is disposed on the electrode and the insulating layer in the via to fill the outermost surface. A step of embedding the semiconductor light-emitting device in the insulating layer so that the end surface of the semiconductor light-emitting device on the side of one conductive type semiconductor layer provided with a bump having a larger area than the opening area of the via is coplanar Have.
In addition, a curing process for curing the entire surface of the insulating layer, a first wiring forming process for forming a first wiring on a surface where the one-conductive type semiconductor layer of the insulating layer is exposed, and a first wiring for the insulating layer are formed. A substrate fixing step of fixing a translucent and insulating second substrate to the surface, and a separation step of separating the first substrate and the insulating layer.
Also, a bump projecting step for projecting bumps from the opposite side of the surface of the insulating layer to which the second substrate is fixed, and a second wiring forming step for forming second interconnects on the surface of the insulating layer on which the bumps project are formed. .
By using such a manufacturing method, it is possible to manufacture an image display device in which the semiconductor light emitting device according to the present invention is arranged with high mass productivity.

  In the method for manufacturing an image display device, the embedding step may include the step of embedding the semiconductor light emitting device on a predetermined plate material at intervals corresponding to a pixel pitch so that the one-conductivity type semiconductor layer and the plate material face each other. It may include an installation step of installing, and a pressure-bonding step of embedding the semiconductor light-emitting device in the insulating layer by pressing the surface of the plate on which the semiconductor light-emitting device is disposed on the insulating layer. This makes it possible to embed a plurality of semiconductor light emitting devices in the insulating layer at a time.

  In the method for manufacturing the image display device, the installation step includes disposing the plate material under a sapphire substrate to which the semiconductor light emitting device is fixed by an insulating adhesive via the bumps, By selectively removing the insulating adhesive by irradiating a laser from the upper surface of the sapphire substrate with the surface to which the semiconductor light emitting device is fixed as the lower surface, the semiconductor light emitting device is selectively applied to the upper surface of the plate material. The process of installing in can be included. By doing in this way, it becomes easy to make the space | interval of the semiconductor light-emitting devices installed in the board | plate material respond | correspond to a pixel pitch.

  According to the semiconductor light emitting device of the present invention, the insulating layer is formed even when the semiconductor light emitting element is fixed by forming the insulating layer on the substrate by forming the electrical connection structure on the upper surface of the reverse conductivity type semiconductor layer. There is no need to form a via in the alignment. Therefore, it is possible to improve the reliability of connection between the external wiring and the semiconductor light emitting element. For example, it is possible to ensure the reliability of connection between the external wiring and the semiconductor light emitting element even in a fine semiconductor light emitting element of 100 micrometers or less.

  According to the method for manufacturing a semiconductor light emitting device of the present invention, the insulating material is coated on the upper surface of the semiconductor growth layer, and a via is formed in the insulating layer made of the insulating material to expose the upper surface of the semiconductor growth layer. By forming a bump on the upper surface of the semiconductor growth layer, the semiconductor light emitting device according to the present invention can be manufactured with high mass productivity.

  According to the method for manufacturing a semiconductor light emitting device of the present invention, an insulating material is coated on the upper surface of the semiconductor growth layer and the upper surface of the electrode, and a via is formed in the insulating layer made of the insulating material to expose the upper surface of the electrode. By forming bumps on the exposed upper surfaces of the electrodes, the semiconductor light emitting device according to the present invention can be manufactured with high mass productivity.

  Further, according to the method for manufacturing the image display device according to the present invention, the bumps are protruded from the insulating layer, thereby facilitating the arrangement of the wiring, and manufacturing the image display device in which the semiconductor light emitting device according to the present invention is arranged with high mass productivity. It becomes possible to do.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a schematic explanatory view showing an embodiment of a semiconductor light emitting device according to the present invention. The semiconductor light emitting device 10 is formed on the upper surface of the p-type semiconductor layer 13 through the positive electrode 15 and the semiconductor light-emitting element 17 in which the n-type semiconductor layer 11, the active layer 12, and the p-type semiconductor layer 13 are sequentially stacked. It consists of a bump 16 and a negative electrode 14 formed on the lower surface of the n-type semiconductor layer 11.

  In the present embodiment, the n-type semiconductor layer 11 is a GaN-based semiconductor layer to which n-type impurities are added, and the p-type semiconductor layer 13 is a GaN-based semiconductor layer to which p-type impurities are added. The active layer 12 is a multiple quantum well active layer containing InGaN.

  The bump 16 is an electrical connection structure for connecting the semiconductor light emitting element 17 and external wiring. Also, by forming the electrode material that can be ohmic-connected to the p-type semiconductor layer 13, it is possible to configure a good electrical connection with the p-type semiconductor layer 13 without forming the positive electrode 15. For example, metals such as Au, Pt, and Al can be used. Moreover, when forming the positive electrode 15, other metals having excellent conductivity such as Cu and Ti can be used. Further, by making the size of the bump 16 equal to or larger than the size of the semiconductor element 17, even if the semiconductor element 17 is fine, for example, 100 micrometers or less, the electrical connection between the semiconductor element 17 and the external wiring It is possible to ensure the reliability. As the shape of the bump 16,

  The positive electrode 15 is not limited as long as it is an electrode material that can be ohmic-connected to the p-type semiconductor layer 13. For example, metals such as Au, Pt, and Al can be used. Thus, by forming the positive electrode 15, the contact resistance between the p-type semiconductor layer 13 and the bump 16 can be reduced. Further, when the bump 16 is formed of an electrode material that can be ohmic-connected to the p-type semiconductor layer 13, it is not necessary to form the positive electrode 15 between the p-type semiconductor layer 13 and the bump 16.

  The negative electrode 14 is not limited as long as it is an electrode material that can be ohmic-connected to the n-type semiconductor layer 11. For example, metals such as Ti, Al, and Au can be used. In addition, since the end surface of the semiconductor light emitting element 17 on the n-type semiconductor layer 11 side is used as a light extraction surface, it is desirable that the negative electrode 14 be made small enough not to impair the reliability of connection with the wiring.

  The example which comprised the image display apparatus 20 using the semiconductor light-emitting device 10 demonstrated above is shown below. On the substrate 21, a lower layer wiring 23 and a transparent electrode 22 are formed. Further, an insulating layer 24 is formed on the upper surfaces of the lower layer wiring 23 and the transparent electrode 22, and the semiconductor light emitting device 10 is disposed on the upper surface of the transparent electrode 22. The bumps 16 formed on the semiconductor light emitting device 10 protrude from the upper surface of the insulating layer 24, and upper layer wirings 25 are formed on the upper surfaces of the bumps 16 and the insulating layer 24.

  The substrate 21 is a plate-like member having flatness and rigidity sufficient to hold the lower layer wiring 23, the transparent electrode 22, the semiconductor light emitting device 10, the insulating layer 24, and the upper layer wiring 25 on the surface. The substrate 21 is formed of a transparent material that can transmit light emitted from the semiconductor light emitting device 10. For example, a plastic substrate or a glass substrate can be used.

  The lower layer wiring 23 is a metal wiring formed on the substrate 21 and is formed on the substrate 21 by using a known wiring pattern technique such as a sputtering technique or a plating technique. The lower layer wiring 23 functions as a common electrode that applies a common potential to the semiconductor light emitting devices 10.

  The transparent electrode 22 is an electrode layer formed of a material that transmits light and has conductivity, and for example, ITO (indium-tin oxide) can be used.

  The insulating layer 24 is an insulating material layer such as a resin formed on the lower layer wiring 23 and the transparent electrode 22 over the entire surface of the substrate 21, and surrounds and holds the semiconductor light emitting device 10.

  The upper layer wiring 25 is a metal wiring formed on the insulating layer 24 and the bump 16, and is formed on the insulating layer 24 and the bump 16 using a known wiring pattern technique such as a sputtering technique or a plating technique. Further, the upper layer wiring 25 functions as a driving electrode for applying a driving potential to each semiconductor light emitting device 10.

  By using the semiconductor light emitting device 10 according to the present invention as the light emitting device like the image display device 20 described above, the bumps 16 can protrude from the upper surface of the insulating layer 24, and the upper layer wiring 25 and the semiconductor light emitting device 17 Electrical connection is easy. Therefore, the reliability of electrical connection between the semiconductor light emitting device 10 and the upper layer wiring 25 can be improved.

  Next, a method for manufacturing a semiconductor light emitting device according to the present invention will be described.

  First, as shown in FIG. 3A, on a sapphire substrate 31, a low-temperature buffer layer 32 made of GaN, an n-type semiconductor layer 33 which is a GaN-based semiconductor layer to which an n-type impurity is added, and a multiple quantum well structure containing InGaN. After the active layer 34 and the p-type semiconductor layer 35, which is a GaN-based semiconductor layer doped with an n-type impurity, are sequentially grown to form a semiconductor growth layer, the positive electrode 36 capable of ohmic contact with the p-type semiconductor layer 35 is lifted off. It is formed on the upper surface of the p-type semiconductor layer 35 at a predetermined interval by the method. Although a spinel substrate, SiC, GaN single crystal, or the like can be used instead of the sapphire substrate 31, it is desirable to use a sapphire substrate to satisfy mass productivity and crystallinity.

  Next, the n-type semiconductor layer 33 is partially exposed by etching using the positive electrode 36 as a mask, and then a thermosetting resin is applied to the exposed upper surface of the p-type semiconductor layer 35 and the upper surface of the positive electrode 36 for insulation. Layer 37 is formed. When the positive electrode 36 is not formed, a predetermined resist film is formed on the upper surface of the p-type semiconductor layer 35 by a photoresist method, and etching is performed to expose a part of the n-type semiconductor layer 33.

  Next, after a predetermined resist film is formed on the upper surface of the insulating layer 37 by a photoresist method, as shown in FIG. 3B, a via 38 is formed in the insulating layer 37 by etching to expose the upper surface of the positive electrode 36. Next, as shown in FIG. 3C, a seed layer 39 made of Ti or Cu is formed on the upper surface of the positive electrode 36 and the surface of the via 38 by sputtering, and then a Cu plating layer 40 made of Cu is formed inside and above the via 38. And an upper part of the insulating layer 37 by plating.

  After the formation of the Cu plating layer 40, a photoresist is patterned on the layer of the Cu plating layer 40 to form a mask layer 50, as shown in FIG. 3D. After the mask layer 50 is formed, etching is performed to form a bump 46 made of the seed layer 39 and the Cu plating 40 as shown in FIG. 3E.

  Next, after fixing the upper surface of the bump 46 to the sapphire substrate 41 using an insulating adhesive 42 made of a resin such as polyimide, the surface on which the semiconductor growth layer of the insulating substrate 31 is formed as shown in FIG. 3F. The low temperature buffer layer 32 is removed by irradiating a laser from the opposite side of the substrate, and the insulating substrate 31 and the n-type semiconductor layer 33 are separated. Next, the semiconductor growth layer formed by sequentially laminating the n-type semiconductor layer 33, the active layer 34, and the p-type semiconductor layer 35 is diced to obtain a semiconductor light emitting device. Finally, a negative electrode 43 capable of ohmic connection with the n-type semiconductor layer 33 is formed on the lower surface of the n-type semiconductor layer 33 by a lift-off method.

  In this way, after forming the Cu plating layer 40, the photoresist is patterned and etched to form a bump 46 larger than the via 38, that is, a bump 46 larger than the opening that does not contact the p-electrode of the via 38. Can do. The bump 46 having such a two-stage shape can be designed separately for the size of the via connected to the semiconductor and the size of the bump on the outermost surface.

  If the via is made small, even if a misalignment occurs in the alignment between the semiconductor light emitting device and the via, it is difficult to protrude from the p electrode of the semiconductor light emitting device, and a metal such as Cu is difficult to contact the p / n junction. Therefore, it is possible to reduce the short circuit of the semiconductor light emitting device that occurs when the metal contacts the p / n junction. In addition, when the bumps are enlarged, it is possible to prevent the semiconductor light emitting device from being directly irradiated with plasma when bumps of the semiconductor light emitting device are cueed by dry etching or the like. Therefore, it is possible to prevent deterioration of the characteristics of the semiconductor light emitting device.

  By forming such two-stage bumps, the via and bump sizes can be designed separately, so that the short circuit of the semiconductor light-emitting device and the characteristic deterioration due to direct plasma irradiation can be prevented. .

  The bumps 46 may be formed by the following forming method. After forming the Cu plating layer 40 as shown in FIG. 3C, a part of the Cu plating is removed by the CMP method, so that the bump 46 is formed only in the via 38 as shown in FIG. That is, the bump 46 having substantially the same shape as the via 38 can be formed. As described above, the bumps 46 can be easily formed without masking by the CMP method. Further, the formation of the bumps 46 by the CMP method has a high resolution due to the influence of side etching, and a smaller semiconductor light emitting device can be formed. The semiconductor light emitting device can be made smaller by providing the semiconductor light emitting device with bumps 46 having substantially the same shape as the via 38.

  Below, the manufacturing method of the image display apparatus which has arrange | positioned the semiconductor light-emitting device based on this invention is demonstrated.

  First, as shown in FIG. 5A, a plurality of semiconductor light emitting devices 62a whose bump end surfaces are fixed to the sapphire substrate 60 are selectively separated from the sapphire substrate 60 by an insulating adhesive made of resin such as polyimide. Then, they are placed on the light emitting device embedding plate 64 on which the silicon film 63 is formed at intervals corresponding to the pixel pitch. The separation of the semiconductor light emitting device 62a is performed by irradiating a laser from the opposite side of the surface of the insulating substrate 60 to which the semiconductor light emitting device 62a is fixed, so that the insulating substrate 60 and the semiconductor light emitting device 62a are fixed. This can be done by selectively removing the adhesive. By doing so, it becomes easy to make the interval between the semiconductor light emitting devices 62a installed on the light emitting device embedding plate 64 correspond to the pixel pitch.

  Next, a part of the insulating layer 65 is exposed to form the semiconductor light emitting device 62a and the partition wall 71 that is disposed together with the semiconductor light emitting device 62a and separates the embedded portions of the semiconductor light emitting devices 62b and 62c constituting the pixel. As shown in FIG. 5B, the lower surface of the first glass plate 61 with the insulating layer 65 made of thermosetting resin formed on the lower surface, and the surface on which the semiconductor light emitting device 62a of the light emitting device embedding plate 64 is installed. The semiconductor light emitting device 62a is embedded in the insulating layer 65 by pressure bonding. As described above, after the semiconductor light emitting device 62a is installed on the light emitting device embedding plate 64 at intervals corresponding to the pixel pitch, the surface of the light emitting device embedding plate 64 on which the semiconductor light emitting device 62a is installed is used as the insulating layer 65. By pressure bonding, a plurality of semiconductor light emitting devices 62a can be embedded in the insulating layer 65 at a time.

  Next, as shown in FIG. 5C, in the same manner as the above steps, other colored semiconductor light emitting devices 62b and 62c constituting one pixel are embedded in the insulating layer 65. The partition wall 71 may be formed once before the semiconductor light emitting device 62a is embedded in the insulating layer 65.

  Next, as shown in FIG. 5D, the semiconductor light emitting devices 62a, 62b, 62c are completely embedded in the insulating layer 65, and the surfaces of the semiconductor light emitting devices 62a, 62b, 62c exposed from the insulating layer 65, and the insulating layer 65 And the surface of the same plane. Next, the entire surface of the insulating layer 65 is exposed to cure the entire surface of the insulating layer 65.

  Next, as shown in FIG. 5E, after a predetermined lower layer wiring 66 is formed on the surface of the insulating layer 65 by a known wiring pattern method such as sputtering, an ITO film 67 which is a transparent electrode is formed. As a method for forming the ITO film 67, for example, there is a method in which an ITO pad 72 is formed at a predetermined position and ITO ink is filled by an ink jet method. Alternatively, the ITO film 67 may be formed by a method of patterning and etching with a photoresist after forming an ITO film on the entire surface by a dry film forming method such as sputtering.

  Next, as shown in FIG. 5F, after the second glass substrate 69 is fixed to the surface of the ITO film 67 with a translucent insulating adhesive 68, an insulating layer 65 of the first glass plate 61 is formed. The first glass plate 61 and the insulating layer 65 are separated by irradiating laser from the opposite side of the surface. Next, etching is performed on the surface of the insulating layer 65 where the wiring 65 is not formed, and bumps included in the semiconductor light emitting devices 62a, 62b, and 62c are projected from the surface of the insulating layer 65.

  Finally, as shown in FIG. 5G, a predetermined upper layer wiring 70 is formed on the surface of the insulating layer 65 by a known wiring pattern method such as sputtering. FIG. 6 shows a top view of the image display device manufactured as described above. Note that FIG. 6 does not show the insulating layer 65 in order to show the lower layer wiring 66.

  By manufacturing the image display device as described above, the image display device using the semiconductor light emitting device according to the present invention can be manufactured with high productivity.

  The embodiments of the semiconductor light emitting device according to the present invention, the manufacturing method thereof, and the manufacturing method of the image display device in which the semiconductor light emitting device according to the present invention is arranged have been described above. The present invention is not limited to the above-described embodiment, and each component can be appropriately changed without departing from the gist of the present invention.

It is a schematic explanatory drawing which shows embodiment of the semiconductor light-emitting device concerning this invention. It is a schematic explanatory drawing of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process of the semiconductor light-emitting device. FIG. 3B is a cross-sectional view showing a manufacturing step continued from FIG. 3A for the semiconductor light emitting device. FIG. 3B is a cross-sectional view showing a manufacturing step continued from FIG. 3B for the semiconductor light emitting device. FIG. 3C is a cross-sectional view showing a manufacturing step continued from FIG. 3C for the semiconductor light emitting device. It is sectional drawing which shows the manufacturing process which continues from FIG. 3D of the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process which continues from FIG. 3E of the same semiconductor light-emitting device. It is sectional drawing which shows the shape of another bump of the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process following FIG. 4A of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process which continues from FIG. 4B of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process following FIG. 4C of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process which continues from FIG. 4D of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process which continues from FIG. 4E of the image display apparatus which has arrange | positioned the same semiconductor light-emitting device. It is sectional drawing which shows the manufacturing process following FIG. 4F of the image display apparatus which has arrange | positioned the same semiconductor light-emitting device. It is a top view of the image display apparatus which has arrange | positioned the semiconductor light-emitting device. It is a schematic explanatory drawing of the image display apparatus which has arrange | positioned the conventional semiconductor light-emitting device.

Explanation of symbols

10, 62a, 62b, 62c ... Semiconductor light emitting device 11, 33, 81 ... n-type nitride semiconductor layers 12, 34, 82 ... active layers 13, 35, 83 ... p-type nitride semiconductors Layers 14, 43 ... negative electrodes 15, 36, 85 ... positive electrodes 16, 46 ... bumps 17, 80 ... semiconductor light emitting elements 20, 90 ... image display devices 21, 69, 91. .. Substrate 22, 92 ... Transparent electrodes 23, 66, 93 ... Lower layer electrodes 24, 37, 65, 94 ... Insulating layers 25, 70, 95 ... Upper layer electrodes 31, 41, 60 ... Sapphire substrate 32 ... low temperature buffer layer 38, 96 ... via 39 ... seed layer 40 ... Cu plating 42, 68 ... insulating adhesive 61 ... glass plate 63 ... silicon Layer 64 ... Light emitting device embedding plate 67 ... ITO film 71 ... Partition wall 72 ... ITO pad

Claims (6)

A semiconductor light emitting device in which one conductive semiconductor layer, an active layer, and a reverse conductive semiconductor layer are sequentially stacked;
An electrode formed on the reverse conductivity type semiconductor layer and made of a material capable of ohmic connection with the reverse conductivity type semiconductor layer;
An insulating layer which covers the side surface of the semiconductor element and the electrode and is provided with a via penetrating the electrode;
A bump disposed on the electrode and the insulating layer in the via to fill the via, the bump having an outermost surface area larger than the opening area of the via;
A semiconductor light emitting device comprising: Forming a low temperature buffer layer, wherein the one conductivity type semiconductor layer, said active layer, a semiconductor growth layer formed successively by laminating said opposite conductivity type semiconductor layer even without low,
Forming an electrode on the reverse conductivity type semiconductor layer of the semiconductor growth layer with a material capable of ohmic connection with the semiconductor growth layer;
Forming an insulating layer by coating an insulating material on the upper surface of the semiconductor growth layer and the upper surface of the electrode;
Forming a via in the insulating layer and exposing an upper surface of the electrode;
Forming a bump having an area of an outermost surface larger than an opening area of the via on the exposed upper surface of the electrode and the insulating layer;
Dividing the semiconductor growth layer into elements ;
Method of manufacturing a semi-conductor light emitting device that have a. The bump exposes the upper surface of the electrode, forms a plating layer by plating with a conductive material, patterns a mask layer having a predetermined shape for masking the plating layer on the upper surface of the plating layer, and 3. The method of manufacturing a semiconductor light emitting device according to claim 2, wherein a bump having an area of the outermost surface larger than an opening area of the via is formed by etching an unmasked portion. A surface of an insulating layer made of a thermosetting resin formed on a lower surface of a light-transmitting and insulating first substrate, a one-conductivity-type semiconductor layer, an active layer, and a reverse-conductivity-type semiconductor layer are sequentially stacked. A semiconductor light-emitting element; an electrode formed on the reverse conductivity type semiconductor layer and made of a material capable of ohmic connection with the reverse conductivity type semiconductor layer; and covering the reverse conductivity type semiconductor layer and the electrode; An insulating layer provided with a via penetrating to the electrode, a bump disposed on the electrode and the insulating layer in the via to fill the via, and an area of the outermost surface being larger than an opening area of the via; and A step of embedding the semiconductor light emitting device in the insulating layer so that the end surface on the one conductivity type semiconductor layer side of the semiconductor light emitting device provided with
A curing step for curing the entire surface of the insulating layer;
A first wiring forming step of forming a first wiring on a surface of the insulating layer where the one-conductivity-type semiconductor layer is exposed;
A substrate fixing step of fixing a translucent and insulating second substrate to the surface of the insulating layer on which the first wiring is formed;
A separation step of separating the first substrate and the insulating layer;
A bump projecting step of projecting the bump from the opposite side of the surface of the insulating layer to which the second substrate is fixed;
Second wiring forming step and the manufacturing method of the field image display apparatus that have a said bump of said insulating layer to form a second wiring on the surface protruding. The embedding step is an installation step in which the semiconductor light emitting device is placed on a predetermined plate material at an interval corresponding to a pixel pitch with the one-conductivity-type semiconductor layer and the plate material facing each other.
A pressure bonding step of embedding the semiconductor light emitting device in the insulating layer by pressure bonding the surface of the plate material on which the semiconductor light emitting device is disposed to the insulating layer ;
The method of manufacturing an image display device including請 Motomeko 4 described. In the installation step, the plate material is disposed under a sapphire substrate to which the semiconductor light emitting device is fixed by an insulating adhesive via the bumps, and a surface of the sapphire substrate to which the semiconductor light emitting device is fixed is a lower surface. as the by irradiating a laser from the top surface of the sapphire substrate, the by selectively removing it an insulating adhesive, the semiconductor light emitting device selectively the including the step of placing the top surface of the plate 請 Motomeko 5 The manufacturing method of the image display apparatus of description.