JP4613713B2 - Connected device - Google Patents

Connected device Download PDF

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JP4613713B2
JP4613713B2 JP2005187240A JP2005187240A JP4613713B2 JP 4613713 B2 JP4613713 B2 JP 4613713B2 JP 2005187240 A JP2005187240 A JP 2005187240A JP 2005187240 A JP2005187240 A JP 2005187240A JP 4613713 B2 JP4613713 B2 JP 4613713B2
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support spring
connector
movable body
base portion
base
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JP2007005252A (en
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岳司 吉田
佳治 佐名川
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Panasonic Corp
Panasonic Electric Works Co Ltd
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Panasonic Corp
Matsushita Electric Works Ltd
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Description

本発明は、接続装置に関するものである。   The present invention relates to a connection device.

携帯機器などの小型化、薄型化、高性能化に伴って、携帯機器の器体内で2つの回路基板間(例えば、フレキシブル基板とプリント基板との間)を電気的に接続する接続装置としてのコネクタに対して、小型化、薄型化、相手側部材である相手側コネクタの複数の接続端子を各別に接続するコンタクトの数の増大、コンタクトの配列ピッチの狭ピッチ化などが望まれており、コンタクトの配列ピッチを0.5mmとしたコネクタが提供されている。なお、この種のコネクタでは、コンタクトの狭ピッチ化に伴い、配列ピッチの高精度化だけでなく、隣り合うコンタクト間の間隔の高精度化も必要となっている。   As a portable device is miniaturized, thinned, and enhanced in performance, as a connection device for electrically connecting two circuit boards (for example, between a flexible board and a printed board) in the body of the portable device. For connectors, there is a demand for downsizing, thinning, increasing the number of contacts that connect multiple connection terminals of the mating connector, which is the mating member, and narrowing the arrangement pitch of the contacts. A connector having a contact arrangement pitch of 0.5 mm is provided. In this type of connector, along with the narrowing of contacts, it is necessary not only to increase the accuracy of the arrangement pitch but also to increase the accuracy of the spacing between adjacent contacts.

また、近年、BGA(Ball Grid Array)やCSP(Chip Size Package)などの相手側部材において2次元アレイ状に配列された球状の接続端子それぞれと各別に接続される複数のコンタクト部を有する接続装置として、図10に示すように、複数のスパイラル状のコンタクト部102をガラスエポキシ製の絶縁基板からなるベース部101の一表面側において2次元アレイ状に配列した構成のものが提案されている(例えば、特許文献1参照)。ここにおいて、コンタクト部102は、銅およびニッケルにより形成されている。また、ベース部101には、当該ベース部101の厚み方向へのコンタクト部102の変位を可能とするための貫通孔101bが貫設されている。なお、上記特許文献1では、相手側部材の接続端子の配列ピッチを0.4mmとした場合に、ベース部101の厚みを1mm程度、貫通孔101bの内径を0.3mm程度とすることが記載されている。
特開2002−175859号公報
Further, in recent years, a connection device having a plurality of contact portions respectively connected to spherical connection terminals arranged in a two-dimensional array on a counterpart member such as BGA (Ball Grid Array) or CSP (Chip Size Package). As shown in FIG. 10, a configuration is proposed in which a plurality of spiral contact portions 102 are arranged in a two-dimensional array on one surface side of a base portion 101 made of a glass epoxy insulating substrate ( For example, see Patent Document 1). Here, the contact portion 102 is made of copper and nickel. In addition, a through hole 101 b is provided in the base portion 101 so as to allow the contact portion 102 to be displaced in the thickness direction of the base portion 101. Note that, in Patent Document 1, when the arrangement pitch of the connection terminals of the counterpart member is 0.4 mm, the thickness of the base portion 101 is about 1 mm and the inner diameter of the through hole 101b is about 0.3 mm. Has been.
JP 2002-175859 A

ところで、図10に示した構成の接続装置では、コンタクト部102がベース部101の厚み方向へ変位可能であって、コンタクト部102のばね力によって所望の接圧を確保するようになっているが、スパイラル状のコンタクト部102の一端部がベース部101の上記一表面側において貫通孔101bの周縁に形成された円環状のフレーム部103に連続一体に連結される一方で他端部が自由端となっており、相手側部材との接続時にコンタクト部102の上記一端部付近に応力が集中するので、球状の接続端子のような突起状の接続端子の突出高さのばらつきに起因して、変位量の大きなコンタクト部102が破断されやすかった。また、ベース部101の厚み方向に直交する面内において各貫通孔1010bごとに2つのコンタクト部102を設けることも考えられるが、2つのコンタクト部102のうちの一方に偏って応力がかかった場合に、より大きな応力がかかった方のコンタクト部102が上記一端部付近で破断されやすかった。   In the connection device having the configuration shown in FIG. 10, the contact portion 102 can be displaced in the thickness direction of the base portion 101, and a desired contact pressure is secured by the spring force of the contact portion 102. One end portion of the spiral contact portion 102 is continuously and integrally connected to an annular frame portion 103 formed on the periphery of the through hole 101b on the one surface side of the base portion 101, while the other end portion is a free end. Since stress concentrates in the vicinity of the one end of the contact portion 102 at the time of connection with the counterpart member, due to variations in the protruding height of the protruding connection terminal such as a spherical connection terminal, The contact portion 102 having a large displacement amount was easily broken. In addition, it is conceivable to provide two contact portions 102 for each through-hole 1010b in a plane orthogonal to the thickness direction of the base portion 101. However, when stress is applied to one of the two contact portions 102 in a biased manner. In addition, the contact portion 102 to which a larger stress was applied was easily broken near the one end portion.

本発明は上記事由に鑑みて為されたものであり、その目的は、従来に比べて相手側部材の突起状の接続端子の突出高さのばらつきに起因した破損が起こりにくい接続装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a connection device that is less likely to be damaged due to variations in the protruding heights of the protruding connection terminals of the counterpart member as compared with the related art. There is.

請求項1の発明は、相手側部材の複数の突起状の接続端子それぞれに対応する各部位に接続端子が挿入される挿入部が設けられたベース部と、ベース部の各挿入部の内側でベース部から離間して配置されて接続端子が接離するコンタクト部が設けられた可動体部と、ベース部と可動体部とを連結し可動体部をベース部の厚み方向に変位可能とする少なくとも2つずつの支持ばね部とを備え、ベース部と各支持ばね部と各可動体部とは、半導体基板を用いて一体に形成されてなることを特徴とする。 According to the first aspect of the present invention, there is provided a base portion provided with an insertion portion into which the connection terminal is inserted into each portion corresponding to each of the plurality of protruding connection terminals of the counterpart member, and inside each insertion portion of the base portion The movable body portion provided with the contact portion that is arranged away from the base portion and that contacts and separates the connection terminal is connected to the base portion and the movable body portion so that the movable body portion can be displaced in the thickness direction of the base portion. At least two support spring portions are provided, and the base portion, each support spring portion, and each movable body portion are integrally formed using a semiconductor substrate .

この発明によれば、相手側部材の突起状の接続端子がコンタクト部と弾接している状態において、コンタクト部が設けられた可動体部とベース部とを連結している各支持ばね部に応力がかかるので、相手側部材の突起状の接続端子の突出高さのばらつきに起因した各支持ばね部の破断が起こりにくいから、従来に比べて相手側部材の突起状の接続端子の突出高さのばらつきに起因した破損が起こりにくくなる。また、この発明によれば、一般的な半導体微細加工プロセスによりベース部の各挿入部および各支持ばね部および各可動体部を形成することができるので、従来に比べて薄型化、小型化、狭ピッチ化が可能になる。 According to this invention, in a state where the protruding connection terminal of the mating member is in elastic contact with the contact portion, stress is applied to each support spring portion connecting the movable body portion provided with the contact portion and the base portion. Therefore, each support spring part is less likely to break due to variations in the protruding height of the protruding connection terminal of the mating member. Damage due to variations in the thickness is less likely to occur . In addition, according to the present invention, each insertion portion and each support spring portion and each movable body portion of the base portion can be formed by a general semiconductor micromachining process. Narrow pitch becomes possible.

請求項2の発明は、請求項1の発明において、前記支持ばね部は、平面視形状が蛇行する形状に形成されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the support spring portion is formed in a meandering shape in plan view.

この発明によれば、前記挿入部のサイズを大きくすることなく前記支持ばね部の全長を長くすることができる。   According to this invention, the total length of the support spring portion can be increased without increasing the size of the insertion portion.

請求項3の発明は、請求項1の発明において、前記支持ばね部は、平面視形状がスパイラル状の形状に形成されてなることを特徴とする。   According to a third aspect of the present invention, in the first aspect of the present invention, the support spring portion is formed in a spiral shape in plan view.

この発明によれば、前記挿入部のサイズを大きくすることなく前記支持ばね部の全長を長くすることができる。   According to this invention, the total length of the support spring portion can be increased without increasing the size of the insertion portion.

請求項4の発明は、請求項1ないし請求項3の発明において、前記支持ばね部は、前記ベース部側の端部の厚さ寸法が前記可動体部側の端部の厚さ寸法に比べて大きく設定されてなることを特徴とする。   According to a fourth aspect of the present invention, in the first to third aspects of the present invention, the support spring portion has a thickness dimension of the end portion on the base portion side compared to a thickness dimension of the end portion on the movable body portion side. It is characterized by being set to be large.

この発明によれば、前記各支持ばね部において応力の集中する前記ベース部側の端部付近で前記各支持ばね部が破断されるのをより確実に防止することができる。   According to this invention, it can prevent more reliably that each said support spring part is fractured | ruptured near the edge part by the side of the said base part where stress concentrates in each said support spring part.

請求項5の発明は、請求項1ないし請求項4の発明において、前記各支持ばね部は、前記可動体部側の端部が前記ベース部側の端部に比べて前方に位置していることを特徴とする。   According to a fifth aspect of the present invention, in each of the first to fourth aspects of the invention, each of the support springs is positioned such that the end on the movable body side is ahead of the end on the base side. It is characterized by that.

この発明によれば、前記ベース部のより一層の薄型化を図れる。   According to the present invention, it is possible to further reduce the thickness of the base portion.

請求項6の発明は、請求項1ないし請求項5の発明において、前記各支持ばね部は、幅方向の両側面と後面との間に面取り部が形成されてなることを特徴とする。   According to a sixth aspect of the present invention, in the first to fifth aspects of the present invention, each of the supporting spring portions is formed by forming a chamfered portion between both side surfaces and a rear surface in the width direction.

この発明によれば、前記各支持ばね部の幅方向の両側面と後面との間に面取り部が形成されていない場合に比べて、前記各支持ばね部の応力集中を緩和することができ、応力集中による前記各支持ばね部の折損を防止することができる。   According to this invention, compared with the case where chamfered portions are not formed between both side surfaces and the rear surface in the width direction of each support spring portion, the stress concentration of each support spring portion can be relaxed, It is possible to prevent the support springs from being broken due to stress concentration.

請求項1の発明では、従来に比べて相手側部材の突起状の接続端子の突出高さのばらつきに起因した破損が起こりにくくなるという効果がある。   According to the first aspect of the present invention, there is an effect that the damage due to the variation in the protruding height of the protruding connection terminal of the mating member is less likely to occur than in the conventional case.

(実施形態1)
本実施形態では、接続装置として、回路基板間の電気的接続に利用可能なコネクタを例示する。
(Embodiment 1)
In this embodiment, the connector which can be utilized for the electrical connection between circuit boards is illustrated as a connection apparatus.

図1に示した本実施形態のコネクタAは、図2に示すようにプリント基板30に実装され、図3に示すようにフレキシブル基板40に実装された相手側部材たるコネクタ(以下、相手側コネクタと称す)Bと電気的に接続される。   A connector A of the present embodiment shown in FIG. 1 is mounted on a printed circuit board 30 as shown in FIG. 2, and is a connector (hereinafter referred to as a counterpart connector) mounted on a flexible board 40 as shown in FIG. Electrically connected to B.

ここにおいて、相手側コネクタBは、第1のシリコン基板からなる第1の半導体基板を用いて形成した矩形板状のコネクタボディ21と、コネクタボディ21の一表面上に所定の配列ピッチ(例えば、500μm)でマトリクス状(2次元アレイ状)に配列された複数(例えば、100個)の突起状(ここでは、球状)の接続端子23とを備えており、コネクタボディ21の上記一表面上で各接続端子23それぞれに接続された金属配線24がコネクタボディ21の厚み方向に貫設した貫通配線(図示せず)を介してフレキシブル基板40の導体パターン(図示せず)と電気的に接続可能となっている。   Here, the mating connector B includes a rectangular plate-like connector body 21 formed using a first semiconductor substrate made of a first silicon substrate, and a predetermined arrangement pitch (for example, on one surface of the connector body 21). A plurality of (for example, 100) protruding (here, spherical) connection terminals 23 arranged in a matrix (two-dimensional array) in a matrix shape (500 μm) on the one surface of the connector body 21 The metal wiring 24 connected to each connection terminal 23 can be electrically connected to a conductor pattern (not shown) of the flexible substrate 40 through a through wiring (not shown) penetrating in the thickness direction of the connector body 21. It has become.

コネクタAは、相手側コネクタBの各接続端子23それぞれに対応する各部位に接続端子23が挿入される矩形状の挿入部11aが設けられたベース部11と、ベース部11の各挿入部11aの内側でベース部11から離間して配置されて接続端子23が接離するコンタクト部14が設けられた可動体部13と、ベース部11の各挿入部11aそれぞれの内側においてベース部11と可動体部13とを連結し可動体部13をベース部11の厚み方向に変位可能とする4つずつの支持ばね部12とを備えている。ここにおいて、コンタクト部14は、ベース部11における相手側コネクタBとの対向面(図1(b)における上面)である前面側で可動体部13に積層された導電層(例えば、金属膜など)により構成されているが、コンタクト部14は、可動体部13だけでなく当該可動体部13に連結された各支持ばね部12と当該可動体部13が配置されている挿入部11aの周部とに跨って積層されている。なお、相手側コネクタBの複数の接続端子23とコネクタAの複数のコンタクト部14とは一対一で対応している。   The connector A includes a base portion 11 provided with a rectangular insertion portion 11a into which the connection terminal 23 is inserted at each portion corresponding to each connection terminal 23 of the mating connector B, and each insertion portion 11a of the base portion 11. Is movable away from the base part 11 and provided with a contact part 14 to which the connection terminal 23 contacts and separates, and the base part 11 is movable inside the insertion part 11a of the base part 11 respectively. Four support spring portions 12 are provided which are connected to the body portion 13 so that the movable body portion 13 can be displaced in the thickness direction of the base portion 11. Here, the contact portion 14 is a conductive layer (for example, a metal film or the like) laminated on the movable body portion 13 on the front side which is a surface facing the mating connector B in the base portion 11 (upper surface in FIG. 1B). However, the contact portion 14 is not only the movable body portion 13 but also the support spring portions 12 connected to the movable body portion 13 and the periphery of the insertion portion 11a where the movable body portion 13 is disposed. It is layered over the part. The plurality of connection terminals 23 of the mating connector B and the plurality of contact portions 14 of the connector A correspond one-to-one.

ここで、ベース部11の各挿入部11a内に設けられた4つの支持ばね部12は、ベース部11に連続一体に連結された側の端部と可動体部13に連続一体に連結された側の端部との間の部位の平面視形状が、蛇行する形状(ベース部11の上記前面に平行な面内で複数回折れ曲がったつづら折れ状の形状)に形成されており、各挿入部11a内それぞれにおいて可動体部13がベース部11の厚み方向に変位可能となるように可動体部13を支持している。要するに、各支持ばね部12は、可動体部13側の端部がベース部11の厚み方向に変位可能となっており、各支持ばね部12のばね力によって接続端子23とコンタクト部14とが弾接可能となっている。ここにおいて、挿入部11a内の4つの支持ばね部12は、ベース部11の前面に平行な面内における挿入部11aの中心に対して回転対称となるように形成されている。また、各支持ばね部12は、厚さ寸法(図1(b)における上下方向の寸法)を幅寸法に比べて大きく設定するとともに、厚さ寸法をベース部11の厚さ寸法に比べて小さく設定してある。なお、本実施形態における各挿入部11aは、ベース11の厚み方向の両面(図1(b)における上面および下面)が開放されているが、少なくとも相手側コネクタBとの対向面である前面が開放されていればよい。   Here, the four support spring portions 12 provided in the respective insertion portions 11 a of the base portion 11 are continuously and integrally connected to the end portion on the side continuously connected to the base portion 11 and the movable body portion 13. The shape in plan view of the portion between the end portion on the side is formed in a meandering shape (a folded shape that is bent a plurality of times in a plane parallel to the front surface of the base portion 11). The movable body portion 13 is supported so that the movable body portion 13 can be displaced in the thickness direction of the base portion 11 in each of the 11a. In short, each support spring portion 12 has an end on the movable body portion 13 side that can be displaced in the thickness direction of the base portion 11, and the connection terminal 23 and the contact portion 14 are connected by the spring force of each support spring portion 12. Elastic contact is possible. Here, the four support spring portions 12 in the insertion portion 11 a are formed to be rotationally symmetric with respect to the center of the insertion portion 11 a in a plane parallel to the front surface of the base portion 11. Each support spring portion 12 has a thickness dimension (vertical direction dimension in FIG. 1B) set larger than the width dimension, and the thickness dimension is smaller than the thickness dimension of the base portion 11. It is set. In addition, each insertion part 11a in this embodiment is open on both surfaces in the thickness direction of the base 11 (upper surface and lower surface in FIG. 1B), but at least a front surface that is a surface facing the mating connector B is provided. It only needs to be open.

また、本実施形態では、コネクタAにおけるベース部11と各支持ばね部12と各可動体部13とが、第2のシリコン基板からなる第2の半導体基板10(図5(a)参照)を用いて形成されている。また、コネクタAは、コンタクト部14のうちベース部11の前面で挿入部11aの周部の全周に亘って形成された部位が、ベース部11の厚み方向に貫設された貫通配線16を介してベース部11の後面(図1(b)における下面)の外部接続電極17と電気的に接続されており、図4に示すように各外部接続電極17それぞれが半田ボール18を介してプリント基板30の導体パターン33と電気的に接続可能となっている。なお、コンタクト部14は少なくとも可動体部13に設けてあればよく、コンタクト部14と貫通配線16との間に両者を電気的に接続する配線(金属配線、拡散層配線など)を介在させてもよい。   Moreover, in this embodiment, the base part 11, the support spring parts 12, and the movable body parts 13 in the connector A are the second semiconductor substrate 10 (see FIG. 5A) made of the second silicon substrate. It is formed using. In addition, the connector A includes a through-wiring 16 in which a portion of the contact portion 14 formed over the entire circumference of the peripheral portion of the insertion portion 11 a on the front surface of the base portion 11 extends in the thickness direction of the base portion 11. Are electrically connected to the external connection electrodes 17 on the rear surface of the base portion 11 (the lower surface in FIG. 1B), and each external connection electrode 17 is printed via a solder ball 18 as shown in FIG. It can be electrically connected to the conductor pattern 33 of the substrate 30. In addition, the contact part 14 should just be provided in the movable body part 13 at least, and wiring (metal wiring, diffusion layer wiring, etc.) which electrically connects both between the contact part 14 and the penetration wiring 16 is interposed. Also good.

コネクタAの各コンタクト部14それぞれに相手側コネクタBの各接続端子23を電気的に接続する際には、図4(a)に示すように、プリント基板30に実装したコネクタAとフレキシブル基板40に実装した相手側コネクタBとを対向させてから、図4(b)に示すように、コネクタAに相手側コネクタBを近づければよい。ここにおいて、コネクタAは各挿入部11a内に設けられた可動体部13を支持している4つの支持ばね部12が変形して可動体部13がベース部11の厚み方向(つまり、接続端子23の挿入方向)に変位することができるので、球状の接続端子23の突出高さなどのばらつきや接続端子23の傾きなどを許容することができるとともに、所望の接圧を満足することが可能となる。なお、コネクタAと相手側コネクタBとの電気的接続状態を維持するためのロック機構は、例えば、プリント基板30およびフレキシブル基板40を収納する機器(例えば、携帯機器など)の器体や、各基板30,40に設ければよいが、各コネクタA,Bに設けてもよい。   When each connection terminal 23 of the mating connector B is electrically connected to each contact portion 14 of the connector A, as shown in FIG. 4A, the connector A and the flexible substrate 40 mounted on the printed circuit board 30 are used. The mating connector B may be brought close to the connector A as shown in FIG. Here, in the connector A, the four support spring portions 12 supporting the movable body portion 13 provided in each insertion portion 11a are deformed so that the movable body portion 13 is in the thickness direction of the base portion 11 (that is, the connection terminal). 23 can be displaced in the direction of insertion 23), so that variations in the protruding height of the spherical connection terminal 23, inclination of the connection terminal 23, and the like can be allowed, and a desired contact pressure can be satisfied. It becomes. In addition, the lock mechanism for maintaining the electrical connection state of the connector A and the mating connector B includes, for example, the body of a device (for example, a portable device) that houses the printed circuit board 30 and the flexible circuit board 40, It may be provided on the substrates 30 and 40, but may be provided on each connector A and B.

以下、コネクタAの製造方法について図5を参照しながら簡単に説明する。   Hereinafter, the manufacturing method of the connector A will be briefly described with reference to FIG.

まず、第2の半導体基板10の裏面側(図5(a)における下面側)の全面にシリコン酸化膜からなる絶縁膜51を形成した後、フォトリソグラフィ技術およびエッチング技術を利用して、絶縁膜51のうちベース部11に対応する部位が残り且つ各挿入部11aそれぞれに対応する部位および各貫通配線16用のスルーホールに対応する部位が除去されるように絶縁膜51をパターニングすることによって、図5(a)に示す構造を得る。   First, after an insulating film 51 made of a silicon oxide film is formed on the entire back surface side (the lower surface side in FIG. 5A) of the second semiconductor substrate 10, an insulating film is formed by using a photolithography technique and an etching technique. 51, by patterning the insulating film 51 so that the portion corresponding to the base portion 11 remains and the portion corresponding to each insertion portion 11a and the portion corresponding to the through hole for each through wiring 16 are removed. The structure shown in FIG.

その後、パターニングされた絶縁膜51をマスクとして、第2の半導体基板10を裏面側から所定深さ(ここでは、第2の半導体基板10において各支持ばね部12に対応する部位の厚みが各支持ばね部12の厚さ寸法になる深さ)までエッチングして各挿入部11aの一部となる凹所11bおよび各スルーホールそれぞれの一部となる有底孔(図示せず)を形成することによって、図5(b)に示す構造を得る。ここにおいて、凹所11bおよび有底孔を形成するエッチングに際しては、垂直深掘が可能なドライエッチング装置(例えば、誘導結合プラズマ型のドライエッチング装置など)を用いることにより、アルカリ系溶液を用いた異方性エッチングを行う場合に比べて、凹所11bの配列ピッチを短縮することができ、ベース部11の平面サイズの小型化を図れる。   Thereafter, using the patterned insulating film 51 as a mask, the second semiconductor substrate 10 is formed to a predetermined depth from the back side (here, the thickness of the portion corresponding to each support spring portion 12 in the second semiconductor substrate 10 is each support). Etching to the depth of the thickness of the spring portion 12) to form a recess 11b that becomes a part of each insertion portion 11a and a bottomed hole (not shown) that becomes a part of each through hole. Thus, the structure shown in FIG. Here, in the etching for forming the recess 11b and the bottomed hole, an alkaline solution was used by using a dry etching apparatus capable of vertical deep digging (for example, an inductively coupled plasma type dry etching apparatus). Compared with the case where anisotropic etching is performed, the arrangement pitch of the recesses 11b can be shortened, and the planar size of the base portion 11 can be reduced.

上述のように第2の半導体基板10に複数の凹所11bおよび複数の有底孔を形成した後、第2の半導体基板10の裏面側の絶縁膜51を除去してから、第2の半導体基板10の主表面側(図5(b)における上面側)の全面にシリコン酸化膜からなる絶縁膜52を形成し、続いて、フォトリソグラフィ技術およびエッチング技術を利用して、絶縁膜52のうちベース部11および各各支持ばね部12および各可動体部13それぞれに対応する部位が残り且つ各スルーホールそれぞれに対応する部位が除去されるように絶縁膜52をパターニングすることによって、図5(c)に示す構造を得る。   After forming the plurality of recesses 11b and the plurality of bottomed holes in the second semiconductor substrate 10 as described above, the insulating film 51 on the back surface side of the second semiconductor substrate 10 is removed, and then the second semiconductor An insulating film 52 made of a silicon oxide film is formed on the entire main surface side (the upper surface side in FIG. 5B) of the substrate 10, and then, using the photolithography technique and the etching technique, By patterning the insulating film 52 so that the portions corresponding to the base portion 11, the respective support spring portions 12, and the movable body portions 13 remain and the portions corresponding to the respective through holes are removed, FIG. The structure shown in c) is obtained.

次に、パターニングされた絶縁膜52をマスクとして、第2の半導体基板10を主表面側からエッチングして挿入部11aおよび各板ばね部12および各可動体部13および各スルーホールを形成することによって、図5(d)に示す構造を得る。なお、このエッチングの際には、垂直深掘が可能なドライエッチング装置(例えば、誘導結合プラズマ型のドライエッチング装置など)を用いる。   Next, using the patterned insulating film 52 as a mask, the second semiconductor substrate 10 is etched from the main surface side to form the insertion portion 11a, each leaf spring portion 12, each movable body portion 13, and each through hole. Thus, the structure shown in FIG. In this etching, a dry etching apparatus capable of vertical deep digging (for example, an inductively coupled plasma type dry etching apparatus) is used.

その後、第2の半導体基板10の主表面側の絶縁膜52をエッチング除去することで図5(e)に示す構造を得てから、第2の半導体基板10の主表面側にメタルマスクを用いて各コンタクト部14を形成することによって、図5(f)に示す構造を得る。その後は、貫通配線16を形成し、第2の半導体基板10の裏面側に外部接続電極17を形成してから、第2の半導体基板10をダイシング工程により個々のチップ(コネクタA)に分離すればよい。   Thereafter, the structure shown in FIG. 5E is obtained by etching away the insulating film 52 on the main surface side of the second semiconductor substrate 10, and then a metal mask is used on the main surface side of the second semiconductor substrate 10. Thus, the structure shown in FIG. 5F is obtained by forming each contact portion 14. Thereafter, the through wiring 16 is formed, the external connection electrode 17 is formed on the back surface side of the second semiconductor substrate 10, and then the second semiconductor substrate 10 is separated into individual chips (connectors A) by a dicing process. That's fine.

以上説明した本実施形態のコネクタAは、相手側部材たる相手側コネクタBの突起状の接続端子23がコンタクト部14と弾接している状態において、コンタクト部14が設けられた可動体部13とベース部11とを連結している各支持ばね部12に応力がかかるので、相手側コネクタBのコネクタボディ21におけるベース部11との対向面からの接続端子23の突出高さのばらつきに起因した各支持ばね部12の破断が起こりにくいから、従来に比べて相手側コネクタBの突起状の接続端子23の突出高さのばらつきに起因した破損が起こりにくくなる。ここにおいて、各支持ばね部12の平面視形状(ベース部11の前方から見た形状)が蛇行する形状に形成されているので、挿入部11aのサイズを大きくすることなく支持ばね部12の全長を長くすることができる。   The connector A of the present embodiment described above includes the movable body portion 13 provided with the contact portion 14 in a state where the protruding connection terminal 23 of the counterpart connector B which is a counterpart member is in elastic contact with the contact portion 14. Since stress is applied to each support spring portion 12 connecting the base portion 11, this is caused by variation in the protruding height of the connection terminal 23 from the surface of the connector body 21 of the mating connector B facing the base portion 11. Since the support spring portions 12 are not easily broken, damage due to variations in the protruding heights of the protruding connection terminals 23 of the mating connector B is less likely to occur than in the past. Here, since the plan view shape of each support spring portion 12 (the shape seen from the front of the base portion 11) is formed in a meandering shape, the entire length of the support spring portion 12 without increasing the size of the insertion portion 11a. Can be lengthened.

また、本実施形態のコネクタAでは、各挿入部11a内に支持ばね部12が4つずつ設けられ、挿入部11a内の4つの支持ばね部12が、ベース部11の前面に平行な面内における挿入部11aの中心に対して回転対称となるように形成されているので、相手側コネクタBとの接続時に可動体部13がベース部11の前面に対して傾くことなくベース部11の厚み方向へ変位し、各支持ばね部12にかかる応力のばらつきを低減できるので、各支持ばね部12の折損をより確実に防止することができる。   In the connector A of the present embodiment, four support spring portions 12 are provided in each insertion portion 11a, and the four support spring portions 12 in the insertion portion 11a are in a plane parallel to the front surface of the base portion 11. Is formed so as to be rotationally symmetric with respect to the center of the insertion portion 11a, so that the movable body portion 13 is not inclined with respect to the front surface of the base portion 11 when connected to the mating connector B. Since the variation in stress applied to each support spring portion 12 can be reduced, breakage of each support spring portion 12 can be prevented more reliably.

ところで、図10に示した構成の接続装置では、ベース部101の基礎となる絶縁基板に貫通孔101bを形成する工程において、ドリル加工により各貫通孔101bを個別に形成しているので、貫通孔101bの配列ピッチおよび貫通孔101b間の間隔それぞれの高精度化が難しいとともに、貫通孔101bのより一層の狭ピッチ化が難しく、接続装置全体としてのより一層の小型化が難しかった。また、図10に示した構成の接続装置では、ベース部101とコンタクト部102とが互いに異なる材料により形成されているので、ベース部101の貫通孔101bとコンタクト部102との位置合わせ精度の関係からも、貫通孔101bおよびコンタクト部102の狭ピッチ化が難しく、接続装置全体のより一層の小型化が難しかった。   By the way, in the connection apparatus having the configuration shown in FIG. 10, in the step of forming the through holes 101b in the insulating substrate that is the basis of the base portion 101, each through hole 101b is individually formed by drilling. It is difficult to increase the accuracy of the arrangement pitch of 101b and the interval between the through holes 101b, and it is difficult to further reduce the pitch of the through holes 101b, and it is difficult to further reduce the size of the entire connecting device. Further, in the connection device having the configuration shown in FIG. 10, since the base portion 101 and the contact portion 102 are formed of different materials, the relationship of alignment accuracy between the through hole 101 b of the base portion 101 and the contact portion 102. Therefore, it is difficult to reduce the pitch of the through holes 101b and the contact portions 102, and it is difficult to further reduce the size of the entire connection device.

これに対して、本実施形態のコネクタAでは、ベース部11の各挿入部11a内に設けられる各1つずつの可動体部13および各4つずつの支持ばね部12が、ベース部11とともに第2の半導体基板10を用いてベース部11と一体に形成されており、一般的な半導体微細加工プロセスによりベース部11の各挿入部11aおよび各可動体部13および各支持ばね部12を形成することができるので、従来に比べて薄型化、小型化、狭ピッチ化が可能になる。ここにおいて、本実施形態のコネクタAでは、シリコンにより形成された各支持ばね部12のばね力によって接続端子23とコンタクト部14との所望の接圧を確保することができるので、図10に示した従来例のように銅膜とニッケル膜とを積層した金属膜からなるコンタクト部102のみのばね力によって接圧を確保する構造に比べて、接続端子23とコンタクト部14との接圧を高めることができる。なお、ニッケルはヤング率が204GPa、破断強度が58MPaであるのに対して、シリコンはヤング率が169GPa、破断強度が2000MPaであり、本実施形態のコネクタAの方が従来例に比べて、接圧を確保するための構造部が破壊されにくい。   On the other hand, in the connector A of the present embodiment, each one movable body portion 13 and each four support spring portions 12 provided in each insertion portion 11 a of the base portion 11 are provided together with the base portion 11. The second semiconductor substrate 10 is used to integrally form the base portion 11, and the insertion portions 11a, the movable body portions 13 and the support spring portions 12 of the base portion 11 are formed by a general semiconductor micromachining process. Therefore, it is possible to reduce the thickness, size, and pitch as compared with the conventional case. Here, in the connector A of the present embodiment, a desired contact pressure between the connection terminal 23 and the contact portion 14 can be ensured by the spring force of each support spring portion 12 formed of silicon. The contact pressure between the connection terminal 23 and the contact portion 14 is increased as compared with the conventional structure in which the contact pressure is ensured only by the spring force of the contact portion 102 made of a metal film in which a copper film and a nickel film are laminated. be able to. Nickel has a Young's modulus of 204 GPa and a breaking strength of 58 MPa, whereas silicon has a Young's modulus of 169 GPa and a breaking strength of 2000 MPa. The connector A of the present embodiment is in contact with the conventional example. The structure for securing pressure is not easily destroyed.

(実施形態2)
本実施形態において接続装置として例示するコネクタAの基本構成は実施形態1と略同じであって、実施形態1ではベース部11の各挿入部11aが矩形状であり、各挿入部11aそれぞれの内側に配置された可動体部13が4つの支持ばね部12を介してベース部11に支持されていたのに対して、図6に示すように、ベース部11の各挿入部11aが円形状であり、各挿入部11aの内側に配置された可動体部13が2つの支持ばね部12を介してベース部11に支持されている点などが相違する。また、実施形態1では、各支持ばね部12の平面視形状が蛇行した形状に形成されていたのに対して、本実施形態では、各支持ばね部12の平面視形状が、スパイラル状の形状に形成されている点が相違する。ここにおいて、挿入部11a内の2つの支持ばね部12は、ベース部11の前面に平行な面内における挿入部11aの中心に対して回転対称となるように形成されている。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 2)
The basic configuration of the connector A exemplified as a connection device in the present embodiment is substantially the same as that of the first embodiment. In the first embodiment, each insertion portion 11a of the base portion 11 is rectangular, and the inner side of each insertion portion 11a. As shown in FIG. 6, each insertion portion 11a of the base portion 11 has a circular shape, whereas the movable body portion 13 arranged on the base portion 11 is supported by the base portion 11 via the four support spring portions 12. There is a difference in that the movable body portion 13 arranged inside each insertion portion 11a is supported by the base portion 11 via the two support spring portions 12. In the first embodiment, the planar view shape of each support spring portion 12 is formed in a meandering shape, whereas in the present embodiment, the planar view shape of each support spring portion 12 is a spiral shape. The difference is that it is formed. Here, the two support spring portions 12 in the insertion portion 11 a are formed to be rotationally symmetric with respect to the center of the insertion portion 11 a in a plane parallel to the front surface of the base portion 11. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

しかして、本実施形態のコネクタAでも、実施形態1と同様に、相手側コネクタBのコネクタボディ21におけるベース部11との対向面からの接続端子23の突出高さのばらつきに起因した各支持ばね部12の破断が起こりにくいから、従来に比べて相手側コネクタBの突起状の接続端子23の突出高さのばらつきに起因した破損が起こりにくくなる。また、各支持ばね部12の平面視形状がスパイラル状の形状に形成されているので、挿入部11aのサイズを大きくすることなく支持ばね部12の全長を長くすることができる。   Thus, in the connector A of the present embodiment as well, as in the first embodiment, each support caused by the variation in the protruding height of the connection terminal 23 from the surface of the connector body 21 of the mating connector B facing the base portion 11. Since the spring portion 12 is less likely to break, the damage due to the variation in the protruding height of the protruding connection terminal 23 of the mating connector B is less likely to occur than in the prior art. Moreover, since the planar view shape of each support spring part 12 is formed in the spiral shape, the full length of the support spring part 12 can be lengthened, without enlarging the size of the insertion part 11a.

(実施形態3)
本実施形態において接続装置として例示するコネクタAの基本構成は実施形態1と略同じであって、図7に示すように、各支持ばね部12の厚さ寸法に関して、ベース部11側の端部の厚さ寸法が、可動体部13側の端部の厚さ寸法に比べて大きく設定されている点や、ベース部11の前面上で各コンタクト部14それぞれに電気的に接続された金属配線15をベース部11の周部まで延長している点が相違する。ここにおいて、コネクタAは、相手側コネクタBの接続端子23がコンタクト部14と接触していない状態において、ベース部11の前面と各支持ばね部12の前面とが略面一となっており、各支持ばね部12の厚さ寸法がベース部11に近づくにつれて徐々に大きくなっている。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 3)
The basic configuration of the connector A exemplified as the connection device in the present embodiment is substantially the same as that of the first embodiment, and as shown in FIG. 7, the end portion on the base portion 11 side with respect to the thickness dimension of each support spring portion 12 The metal wiring electrically connected to each contact part 14 on the front surface of the base part 11 is set to be larger than the thickness dimension of the end part on the movable body part 13 side. The difference is that 15 extends to the periphery of the base portion 11. Here, in the connector A, the front surface of the base portion 11 and the front surface of each support spring portion 12 are substantially flush with each other in a state where the connection terminal 23 of the mating connector B is not in contact with the contact portion 14. The thickness dimension of each support spring portion 12 gradually increases as it approaches the base portion 11. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

しかして、本実施形態のコネクタAでは、実施形態1のように各支持ばね部12の厚さ寸法が一定である場合に比べて、各支持ばね部12において応力の集中するベース部11側の端部付近で各支持ばね部12が破断されるのをより確実に防止することができる。また、本実施形態のコネクタAでは、各金属配線15をベース部11の前面側で引き回す必要があるので、実施形態1に比べてコネクタAの平面サイズが大きくなってしまうが、実施形態1にて説明した貫通配線16を形成する工程が不要となり、各金属配線15の材料をコンタクト部14と同一材料にすれば、各金属配線15をコンタクト部14と同時に形成することができるので、製造プロセスの簡略化を図れる。なお、実施形態1,2における各支持ばね部12についても、ベース部11側の端部の厚さ寸法を可動体部13側の端部の厚さ寸法に比べて大きく設定すれば、各支持ばね部12において応力の集中するベース部11側の端部付近で各支持ばね部12が破断されるのをより確実に防止することができる。   Thus, in the connector A of the present embodiment, compared to the case where the thickness dimension of each support spring portion 12 is constant as in the first embodiment, the stress on the base portion 11 side where stress is concentrated in each support spring portion 12. It can prevent more reliably that each support spring part 12 fractures | ruptures near an edge part. Moreover, in the connector A of this embodiment, since it is necessary to route each metal wiring 15 in the front side of the base part 11, the planar size of the connector A will become large compared with Embodiment 1, The step of forming the through-wiring 16 described above is not necessary, and if the metal wiring 15 is made of the same material as that of the contact portion 14, each metal wiring 15 can be formed simultaneously with the contact portion 14. Can be simplified. For each support spring portion 12 in Embodiments 1 and 2, if the thickness dimension of the end portion on the base portion 11 side is set larger than the thickness dimension of the end portion on the movable body portion 13 side, each support spring portion 12 is supported. It can prevent more reliably that each support spring part 12 is fractured | ruptured in the spring part 12 near the edge part by the side of the base part 11 where stress concentrates.

(実施形態4)
本実施形態において接続装置として例示するコネクタAの基本構成は実施形態3と略同じであって、図8に示すように、ベース部11の厚み方向に沿った各支持ばね部12の厚さ寸法が一定であり、各支持ばね部12における可動体部13側の端部がベース部11側の端部に比べて前方に位置している点が相違する。なお、実施形態3と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 4)
The basic configuration of the connector A exemplified as the connection device in the present embodiment is substantially the same as that of the third embodiment, and as shown in FIG. 8, the thickness dimension of each support spring portion 12 along the thickness direction of the base portion 11. Is different, and the end on the movable body 13 side of each support spring portion 12 is different from the end on the base portion 11 side. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

しかして、本実施形態のコネクタAでは、相手側コネクタB(図3および図4参照)を接続していない状態において、各支持ばね部12の可動体部13側の端部がベース部11の前方へ突出しているので、実施形態3に比べてベース部11の厚み寸法を小さくしても、相手側コネクタBを接続する際のベース部11の厚み方向への各支持ばね12の変位量を確保することができるから、実施形態3に比べて、ベース部11のより一層の薄型化を図れ、コネクタAのコンタクト部14と相手側コネクタBの接続端子23とを電気的に接続した状態におけるプリント基板30(図4参照)とフレキシブル基板40(図4参照)との間の距離をより短くすることができる。   Thus, in the connector A of the present embodiment, the end of each support spring portion 12 on the movable body portion 13 side is the base portion 11 in a state where the mating connector B (see FIGS. 3 and 4) is not connected. Since it protrudes forward, even if the thickness dimension of the base portion 11 is made smaller than that of the third embodiment, the displacement amount of each support spring 12 in the thickness direction of the base portion 11 when the mating connector B is connected is reduced. Since the base portion 11 can be made thinner than the third embodiment, the contact portion 14 of the connector A and the connection terminal 23 of the mating connector B are electrically connected to each other. The distance between the printed board 30 (see FIG. 4) and the flexible board 40 (see FIG. 4) can be further shortened.

(実施形態5)
本実施形態において接続装置として例示するコネクタAの基本構成は実施形態1と略同じであって、図9に示すように、各支持ばね部12における幅方向の両側面12b,12bそれぞれと後面12cとの間に面取り部12d,12dが形成されている点が相違するだけである。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 5)
The basic configuration of the connector A exemplified as a connection device in the present embodiment is substantially the same as that of the first embodiment, and as shown in FIG. 9, both side surfaces 12b and 12b in the width direction of each support spring portion 12 and the rear surface 12c. The only difference is that chamfered portions 12d and 12d are formed between the two. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

しかして、本実施形態のコネクタAでは、実施形態1に比べて、各支持ばね部12の応力集中を緩和することができ、応力集中による各支持ばね部12の折損を防止することができる。   Therefore, in the connector A of the present embodiment, the stress concentration of each support spring portion 12 can be reduced as compared with the first embodiment, and breakage of each support spring portion 12 due to the stress concentration can be prevented.

なお、実施形態1〜4においても面取り部12dを設けてもよいことは勿論である。また、各支持ばね部12における幅方向の両側面12b,12bそれぞれと前面との間にも面取り部を形成すれば、各支持ばね部12の応力集中がより緩和され、応力集中による各支持ばね部12の折損をより確実に防止することができる。   Needless to say, the chamfered portions 12d may also be provided in the first to fourth embodiments. Further, if a chamfered portion is formed between each side surface 12b, 12b in the width direction of each support spring portion 12 and the front surface, the stress concentration of each support spring portion 12 is further relaxed, and each support spring due to stress concentration is reduced. Breakage of the portion 12 can be prevented more reliably.

上記各実施形態では、接続装置として、回路基板間の電気的な接続に用いるコネクタAを例示したが、接続装置は、回路基板間の電気的な接続に用いるコネクタに限定するものではなく、接続装置の相手側部材も相手側コネクタBに限らず、例えば、BGAやCSPやベアチップなどでもよい。   In each of the above embodiments, the connector A used for electrical connection between circuit boards is illustrated as the connection device. However, the connection device is not limited to the connector used for electrical connection between circuit boards. The counterpart member of the apparatus is not limited to the counterpart connector B, and may be, for example, a BGA, a CSP, a bare chip, or the like.

実施形態1におけるコネクタを示し、(a)は概略平面図、(b)は(a)のC−C’概略断面図である。The connector in Embodiment 1 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 同上におけるコネクタを示し、(a)はプリント基板に表面実装した状態の概略斜視図、(b)は(a)の要部拡大図である。The connector in the same as above is shown, (a) is a schematic perspective view in a state where it is surface-mounted on a printed circuit board, and (b) is an enlarged view of a main part of (a). 同上における相手側コネクタを示し、(a)はフレキシブル基板に表面実装した状態の概略斜視図、(b)は(a)の要部拡大図である。The other party connector in the same as the above is shown, (a) is a schematic perspective view in a state where it is surface-mounted on a flexible substrate, and (b) is an enlarged view of a main part of (a). 同上の動作説明図である。It is operation | movement explanatory drawing same as the above. 同上におけるコネクタの製造方法を説明するための主要工程断面図である。It is principal process sectional drawing for demonstrating the manufacturing method of the connector in the same as the above. 実施形態2におけるコネクタを示し、(a)は概略平面図、(b)は(a)のC−C’概略断面図である。The connector in Embodiment 2 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態3におけるコネクタを示し、(a)は概略平面図、(b)は(a)のC−C’概略断面図である。The connector in Embodiment 3 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態4におけるコネクタを示し、(a)は概略平面図、(b)は(a)のC−C’概略断面図である。The connector in Embodiment 4 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態5におけるコネクタを示し、(a)は概略平面図、(b)は(a)のC−C’概略断面図である。The connector in Embodiment 5 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 従来例を示し、(a)は概略平面図、(b)は(a)のC−C’断面図である。A prior art example is shown, (a) is a schematic plan view, and (b) is a C-C 'sectional view of (a).

符号の説明Explanation of symbols

A コネクタ
11 ベース部
11a 挿入部
12 支持ばね部
13 可動体部
14 コンタクト部
16 貫通配線
17 外部接続電極
A connector 11 base portion 11a insertion portion 12 support spring portion 13 movable body portion 14 contact portion 16 through wiring 17 external connection electrode

Claims (6)

相手側部材の複数の突起状の接続端子それぞれに対応する各部位に接続端子が挿入される挿入部が設けられたベース部と、ベース部の各挿入部の内側でベース部から離間して配置されて接続端子が接離するコンタクト部が設けられた可動体部と、ベース部と可動体部とを連結し可動体部をベース部の厚み方向に変位可能とする少なくとも2つずつの支持ばね部とを備え、ベース部と各支持ばね部と各可動体部とは、半導体基板を用いて一体に形成されてなることを特徴とする接続装置。 A base part provided with an insertion part into which a connection terminal is inserted into each part corresponding to each of a plurality of projecting connection terminals of the counterpart member, and arranged away from the base part inside each insertion part of the base part And at least two support springs that connect the movable body portion provided with the contact portion to which the connection terminal contacts and separates, and the base portion and the movable body portion so that the movable body portion can be displaced in the thickness direction of the base portion. And a base part, each support spring part, and each movable body part are integrally formed using a semiconductor substrate . 前記支持ばね部は、平面視形状が蛇行する形状に形成されてなることを特徴とする請求項1記載の接続装置。   The connection device according to claim 1, wherein the support spring portion is formed in a meandering shape in plan view. 前記支持ばね部は、平面視形状がスパイラル状の形状に形成されてなることを特徴とする請求項1記載の接続装置。   The connection device according to claim 1, wherein the support spring portion is formed in a spiral shape in plan view. 前記支持ばね部は、前記ベース部側の端部の厚さ寸法が前記可動体部側の端部の厚さ寸法に比べて大きく設定されてなることを特徴とする請求項1ないし請求項3のいずれかに記載の接続装置。   4. The support spring portion, wherein a thickness dimension of an end portion on the base portion side is set larger than a thickness dimension of an end portion on the movable body portion side. The connection apparatus in any one of. 前記各支持ばね部は、前記可動体部側の端部が前記ベース部側の端部に比べて前方に位置していることを特徴とする請求項1ないし請求項4のいずれかに記載の接続装置。   5. The support spring portion according to claim 1, wherein an end portion on the movable body portion side is located forward of an end portion on the base portion side. 6. Connected device. 前記各支持ばね部は、幅方向の両側面と後面との間に面取り部が形成されてなることを特徴とする請求項1ないし請求項5のいずれかに記載の接続装置 The connecting device according to claim 1, wherein each of the support spring portions is formed with a chamfered portion between both side surfaces and a rear surface in the width direction .
JP2005187240A 2005-06-27 2005-06-27 Connected device Expired - Fee Related JP4613713B2 (en)

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JP2004012357A (en) * 2002-06-10 2004-01-15 Advanced Systems Japan Inc Spiral contactor, method for manufacturing the same, semiconductor inspection device using the same, and electronic component
JP2004259467A (en) * 2003-02-24 2004-09-16 Micronics Japan Co Ltd Contact and electrical connection device
JP2005129428A (en) * 2003-10-27 2005-05-19 Sumitomo Electric Ind Ltd Manufacturing method for telescopic contact, contact manufactured by the method and inspection device or electronic instrument provided with the contact
WO2005057734A1 (en) * 2003-12-12 2005-06-23 Sumitomo Electric Industries, Ltd. Fine terminal, its manufacturing method, and contact sheet

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JP2001332323A (en) * 2000-05-24 2001-11-30 Anritsu Corp Silicon electrode and high frequency contact point sheet as well as manufacturing method of silicon electrode
JP2004012357A (en) * 2002-06-10 2004-01-15 Advanced Systems Japan Inc Spiral contactor, method for manufacturing the same, semiconductor inspection device using the same, and electronic component
JP2004259467A (en) * 2003-02-24 2004-09-16 Micronics Japan Co Ltd Contact and electrical connection device
JP2005129428A (en) * 2003-10-27 2005-05-19 Sumitomo Electric Ind Ltd Manufacturing method for telescopic contact, contact manufactured by the method and inspection device or electronic instrument provided with the contact
WO2005057734A1 (en) * 2003-12-12 2005-06-23 Sumitomo Electric Industries, Ltd. Fine terminal, its manufacturing method, and contact sheet

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