JP4612833B2 - Exposure apparatus and device manufacturing method - Google Patents

Description

The present invention relates to the EXPOSURE APPARATUS you expose the object to be processed through the filled liquid between the projection optical system and the object to be processed.

  When manufacturing fine semiconductor elements such as semiconductor memories and logic circuits or liquid crystal display elements using photolithography technology, a circuit pattern drawn on a reticle (mask) is projected onto a wafer or the like by a projection optical system. Conventionally, a reduction projection exposure apparatus for transferring a circuit pattern has been used.

  The minimum dimension (resolution) that can be transferred by the reduction projection exposure apparatus is proportional to the wavelength of light used for exposure and inversely proportional to the numerical aperture (NA) of the projection optical system. Therefore, the shorter the wavelength and the higher the NA, the better the resolution. For this reason, with the recent demand for miniaturization of semiconductor elements, the wavelength of exposure light has been shortened, and the wavelength of ultraviolet rays used from KrF excimer laser (wavelength about 248 nm) to ArF excimer laser (wavelength about 193 nm) is short. It has become.

  Under such circumstances, liquid immersion exposure has attracted attention as a technique for further improving the resolution while using a light source such as an ArF excimer laser (for example, see Patent Document 1). In the liquid immersion exposure, the NA on the wafer side (image plane side) of the projection optical system is further increased by increasing the NA (liquid immersion material). That is, the NA of the projection optical system is NA = n · sin θ, where n is the refractive index of the medium, and therefore, at least a portion between the projection optical system and the wafer has a refractive index higher than the refractive index of air ( By filling with a medium (liquid) of n> 1), NA can be increased to n. In other words, the immersion exposure improves the resolution by increasing the NA of the projection optical system as viewed from the wafer side (1 or more).

On the other hand, to control the exposure apparatus, it is necessary to measure various physical quantities and monitor the apparatus state. For example, considering the exposure amount and imaging position, these physical quantities are acquired by detecting the exposure light that has passed through the actual projection optical system. Therefore, in the case of immersion exposure, a sensor that measures these physical quantities is required to have the ability to measure the physical quantity in the immersion state, that is, at the maximum NA.
JP-A-10-303114

  The projection optical system of the immersion exposure apparatus is designed on the assumption that the space between the wafer-side final surface (lens) and the wafer is filled with liquid. Accordingly, the immersion material is indispensable when measuring various physical quantities.

  However, a photoelectric conversion device (light receiving device) such as a photodiode that converts the amount of light into an electrical signal usually dislikes moisture. Therefore, it is necessary to configure the light receiving unit with a structure in which the liquid immersion material does not enter at least a portion where the light receiving device is mounted.

  On the other hand, as a technique for blocking moisture without being limited to an immersion material, a package having a translucent window material is commercially available. A method of transmitting only light and blocking moisture by the window material is very effective. However, since the NA of the projection optical system of the immersion exposure apparatus exceeds 1, when a general flat window material is used, the light of NA exceeding 1 is totally reflected on the exit surface of the window material and received. Does not reach the device.

Accordingly, the present invention is an exemplary object to provide an exposure apparatus having a light receiving unit that NA without immersion of the light receiving device can be detected light more than 1.

An exposure apparatus according to an aspect of the present invention includes a projection optical system that projects light from a reticle onto an object to be processed, and the object to be processed via a liquid filled between the projection optical system and the object to be processed. an exposure apparatus that exposes a processed, a light receiving unit having a light receiving device for receiving the light passing through the projection optical system and the liquid, the light receiving unit, passes through the pre-Symbol projection optical system and the liquid A window member that transmits light, and a deflecting unit that is in contact with the window member and transmits and reflects the light transmitted through the window member and guides the light to the light receiving device . It has a conical surface for guiding the light transmitted through the window material to the light receiving device .

An exposure apparatus according to an aspect of the present invention includes a projection optical system that projects light from a reticle onto an object to be processed, and the object to be processed via a liquid filled between the projection optical system and the object to be processed. an exposure apparatus that exposes a processed, a light receiving unit having a line sensor for receiving the light passing through the projection optical system and the liquid, the light receiving unit, passes through the pre-Symbol projection optical system and the liquid A window member that transmits light, and the surface of the window member on the line sensor side includes a plurality of concave surfaces formed corresponding to a plurality of pixels of the line sensor, and the window member side of the window member wherein the plurality of concave non-barrier to the flat portion of light film surface is formed, characterized in that.

A device manufacturing method according to another aspect of the present invention includes the steps of exposing an object using the above exposure apparatus, a step of developing the object to be processed that has been exposed in the step, to have a Features.

  Further objects and other features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

According to the present invention, it is possible to provide an exposure apparatus having a light receiving unit that NA without immersion of the light receiving device can be detected light more than 1.

  Hereinafter, an exposure apparatus according to one aspect of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted. FIG. 1 is a schematic sectional view showing the arrangement of an exposure apparatus 1 according to the present invention.

  The exposure apparatus 1 includes a reticle via a liquid (immersion material) WT supplied to at least a part between the final surface (lens surface) of the projection optical system 30 on the target object 40 side and the target object 40. 20 is an immersion type exposure apparatus that exposes the object to be processed 40 by a step-and-repeat method or a step-and-scan method. Such an exposure apparatus is suitable for a lithography process of sub-micron or quarter micron or less, and in the present embodiment, a step-and-scan type exposure apparatus (also referred to as “scanner”) will be described as an example. Here, the “step and scan method” means that the wafer is continuously scanned (scanned) with respect to the reticle to expose the reticle pattern onto the wafer, and the wafer is stepped after completion of one shot of exposure. The exposure method moves to the next exposure area. The “step-and-repeat method” is an exposure method in which the wafer is stepped and moved to the next exposure area for every batch exposure of the wafer.

  As shown in FIG. 1, the exposure apparatus 1 includes an illumination apparatus 10, a reticle stage 25 on which a reticle 20 is mounted, a projection optical system 30, a wafer stage 45 on which an object to be processed 40 is mounted, and a liquid supply / discharge mechanism 50. And a light receiving unit 60 and a control unit 70.

  The illumination device 10 illuminates a reticle 20 on which a transfer circuit pattern is formed, and includes a light source unit 12 and an illumination optical system 14.

For the light source unit 12, for example, an ArF excimer laser having a wavelength of about 193 nm, a KrF excimer laser having a wavelength of about 248 nm, or the like can be used as the light source. However, the type of the light source is not limited to the excimer laser. A 157 nm F ₂ laser may be used, and the number of light sources is not limited. For example, if two solid-state lasers that operate independently are used, there is no coherence between the solid-state lasers, and speckle due to the coherence is considerably reduced. Further, the optical system may be swung linearly or rotationally to reduce speckle. The light source that can be used for the light source unit 12 is not limited to a laser, and one or a plurality of lamps such as a mercury lamp and a xenon lamp can be used.

  The illumination optical system 14 is an optical system that illuminates the reticle 20, and includes a lens, a mirror, an optical integrator, a stop, and the like. For example, a condenser lens, a fly-eye lens, an aperture stop, a condenser lens, a slit, and an imaging optical system are arranged in this order. The illumination optical system 14 can be used regardless of on-axis light or off-axis light. The optical integrator includes an integrator configured by stacking a fly-eye lens and two sets of cylindrical lens array (or lenticular lens) plates, but may be replaced by an optical rod or a diffractive element.

  The reticle 20 is, for example, a reflective or transmissive reticle, on which a circuit pattern to be transferred is formed, and is supported and driven by a reticle stage 25. Diffracted light emitted from the reticle 20 is projected onto the object 40 via the projection optical system 30. The reticle 20 and the workpiece 40 are arranged in an optically conjugate relationship. Since the exposure apparatus 1 is a scanner, the pattern of the reticle 20 is transferred onto the object to be processed 40 by scanning the reticle 20 and the object to be processed 40 at the speed ratio of the reduction magnification ratio. In the case of a step-and-repeat type exposure apparatus (also called “stepper”), exposure is performed with the reticle 20 and the object to be processed 40 being stationary.

  The reticle stage 25 supports the reticle 20 via a reticle chuck (not shown) and is connected to a moving mechanism (not shown). A moving mechanism (not shown) is configured by a linear motor or the like, and can move the reticle 20 by driving the reticle stage 25 in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotation direction of each axis. Here, the scanning direction in the plane of the reticle 20 or the object to be processed 40 is defined as the Y axis, the direction perpendicular thereto is defined as the X axis, and the direction perpendicular to the surface of the reticle 20 or the object to be processed 40 is defined as the Z axis.

  The projection optical system 30 has a function of forming an image of the diffracted light that has passed through the pattern formed on the reticle 20 on the workpiece 40. The projection optical system 30 includes an optical system including only a plurality of lens elements, an optical system (catadioptric optical system) having a plurality of lens elements and at least one concave mirror, a plurality of lens elements, and at least one kinoform. An optical system having a diffractive optical element such as can be used. When correction of chromatic aberration is required, a plurality of lens elements made of glass materials having different dispersion values (Abbe values) can be used, or the diffractive optical element can be configured to generate dispersion in the opposite direction to the lens element. To do.

  The object to be processed 40 is a wafer in this embodiment, but widely includes a liquid crystal substrate and other objects to be processed. A photoresist is applied to the object to be processed 40.

  The wafer stage 45 supports the workpiece 40 by a wafer chuck (not shown). Similar to the reticle stage 25, the wafer stage 45 uses the linear motor to move the workpiece 40 in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotation direction of each axis. Further, the position of the reticle stage 25 and the position of the wafer stage 45 are monitored by, for example, a laser interferometer or the like, and both are driven at a constant speed ratio. The wafer stage 45 is provided on a stage surface plate supported on a floor or the like via a damper, for example, and the reticle stage 25 and the projection optical system 30 are, for example, on a base frame placed on the floor or the like. It is provided on a lens barrel surface plate (not shown) that is supported via a damper.

  The liquid supply / discharge mechanism 50 is connected between the projection optical system 30 and the object to be processed 40 via the supply / discharge nozzle 52, specifically, the final surface (projection optical system 30 on the object 40 side of the projection optical system 30). The liquid WT is supplied between the optical element disposed at the final end of the object 40 to be processed and the object 40 to be processed, and the supplied liquid WT is recovered. That is, the gap formed between the projection optical system 30 and the surface of the object to be processed 40 is filled with the liquid WT supplied from the liquid supply / discharge mechanism 50. The liquid WT is pure water in the present embodiment, but is not particularly limited to pure water. The liquid WT has high transmission characteristics and high refractive index characteristics with respect to the wavelength of exposure light. A liquid having high chemical stability with respect to the photoresist applied to the processing body 40 can be used. For example, a fluorine-based inert liquid may be used.

  The light receiving unit 60 is disposed on the wafer stage 45 and detects the amount of exposure light that passes through the projection optical system 30 and the liquid WT and is incident on the object to be processed 40. As shown in FIG. 2, the light receiving unit 60 includes a first hemispherical lens 61 in which a part of the apex is polished to a plane, a window material 62 made of a transparent substrate, a light shielding pattern 63 having an opening OP in the center, The second hemispherical lens 64, a photodiode 65 as a light receiving device, and a holding function for holding the window material 62 are provided. The first hemispherical lens 61, the second hemispherical lens 64, and the photodiode 65 are provided. These optical components are assembled by optical contacts. The light receiving unit 60 is shielded from the external atmosphere by the window material 62 and the package 66, and prevents the liquid WT from entering the photodiode 65 (the part where the photodiode 65 is disposed). Here, FIG. 2 is a schematic cross-sectional view showing an example of the configuration of the light receiving unit 60.

  Light having an NA exceeding 1 enters the light receiving unit 60 through the liquid WT in contact with the light shielding pattern 63. As light reaching the light receiving unit 60, light that is spatially received by the opening OP provided in the light shielding pattern 63 is selected. By this. The light receiving unit 60 exhibits excellent spatial resolution.

  The light incident from the opening OP of the light shielding pattern 63 passes through the window material 62 and enters the first hemispherical lens 61. Here, the light L1 having a small NA passes through the first hemispherical lens 61 and the second hemispherical lens 64, and is referred to as an emission surface (hereinafter referred to as a “final emission surface”) of the second hemispherical lens 64. ) Directly emitted from 64a, and further reaches the photodiode 65 to be converted into an electric signal.

  The light L2 having a certain NA or more reaches the spherical surface 61a of the first hemispherical lens 61 before reaching the final emission surface 64a. At this time, the light L2 is totally reflected without being emitted out of the first hemispherical lens 61 because the incident angle incident on the spherical surface 61a of the first hemispherical lens 61 exceeds the critical angle. . Such total reflection is repeated until the final exit surface 64a is reached. As a result, the incident angle of the light L2 on the final emission surface 64a is reduced, and the light L2 is emitted out of the second hemispherical lens 64 and reaches the photodiode 65.

  In the absence of the first hemispherical lens 61, the light with NA exceeding 1 is totally reflected by the surface (exit surface) of the window material 62 on the photodiode 65 side, and therefore received by the photodiode 65. I can't. In the present embodiment, since the first hemispherical lens 61 and the window material 62 are integrated, light that is normally totally reflected by the exit surface of the window material 62 is transmitted to the first hemispherical lens 61. And can be transmitted. Furthermore, it is totally reflected by the spherical surface 61a of the first hemispherical lens 61 and can pass through the final exit surface 64a.

  In the present embodiment, the thickness of the window material 62 is 0.92 [mm], the radius of the first hemispherical lens 61 is 3 [mm], and the thickness of the upper and lower surfaces of the first hemispherical lens 61 is 2.6 [mm]. mm], the light receiving unit 60 showed good performance.

  Here, the function of the second hemispherical lens 64 will be described. FIG. 3 is a graph showing the distribution of light emitted from the first hemispherical lens 61 in the absence of the second hemispherical lens 64. In FIG. 3, the case where the light travels from the optical axis to the left side of the drawing is indicated by NA, and the sign indicates that the incident angle traveling in the direction of diffusion from the optical axis is positive and the incident angle traveling while converging is negative.

  Referring to FIG. 3, there is a portion where the injection angle is 90 degrees near NA = 1. This means that the light cannot be emitted from the window material 62 and the first hemispherical lens 64. The light L3 of NA that is large enough not to be reflected by the spherical surface 61a of the first hemispherical lens 61 directly reaches the exit surface 61b of the first hemispherical lens 61. However, if the light L3 passes through the center of the opening OP of the light shielding pattern 63, NA = 1.03 if the angle between the light L3 and the optical axis is 40.44 degrees and the refractive index of the glass material is 1.59. Is over 1 Therefore, a part of the light L3 that directly reaches the emission surface 61 b of the first hemispherical lens 61 is not emitted from the first hemispherical lens 61.

  Therefore, in the present embodiment, the second hemispherical lens 64 is provided on the exit surface 61 b of the first hemispherical lens 61. The second hemispherical lens 64 has a substantially trapezoidal cross section. Note that the second hemispherical lens 64 has a spherical side surface due to lens processing restrictions, but may be a tapered cylindrical surface. Further, the thickness of the second hemispherical lens 64 and the diameter of the final emission surface 64a need only have such a length that light with NA of 1 enters the boundary between the plane and the side surface 64b or the side surface 64b side. Further, the side surface 64b of the second hemispherical lens 64 has a cross-sectional shape with an angle of about 40 degrees with respect to the final exit surface 64a. As a result, the light L3 having an NA exceeding 1 reaching the exit surface 61b of the first hemispherical lens 61 is incident on the second hemispherical lens 64 as it is and reaches the side surface 64b. Since the side surface 64b of the second hemispherical lens 64 is formed substantially perpendicular to the light traveling direction, the incident angle is reduced, and the light L3 is emitted from the second hemispherical lens 64. Become.

  As described above, the actual design values have been described. Conceptually, the first hemispherical lens 61 is configured so that light having the maximum NA desired to be received by the photodiode 65 can enter the first hemispherical lens 61. It is necessary to set the size (ie, radius) of the contact surface between the window member 62 and the window member 62. Thereby, the thickness of the window material 62 and the radius and thickness of the spherical surface 61a of the first hemispherical lens 61 are determined.

  The first hemispherical lens 61 deflects large NA light by the spherical surface 61a. In order to increase the deflection effect, the exit surface 61b of the first hemispherical lens 61 is preferably formed by cutting along a plane passing through the center. As a result, as described above, depending on the size of the maximum NA, light having an NA exceeding 1 may directly reach the exit surface 61 b of the first hemispherical lens 61. In this case, the incident angle with respect to the final exit surface 64a may be decreased using the side surface 64b of the second hemispherical lens 64. In addition, as described above, the second hemispherical lens 64 has a hemispherical shape in the present embodiment, but the second hemispherical lens 64 does not necessarily have a spherical shape such as a shape obtained by cutting out a part of a cone. Further, by setting the angle of the side surface 64b of the second hemispherical lens 64 so that the incident light is incident at an angle greater than or equal to the vertical angle, the angle between the refracted light and the optical axis is the light before the refraction. The angle of the light receiving surface of the photodiode 65 can be reduced.

  As described above, according to the light receiving unit 60, the liquid WT is prevented from entering the photodiode 65 (the part where the liquid WT is disposed), and light with NA exceeding 1 is received by the photodiode 65. be able to. In other words, the light beam angle of light having a large NA can be deflected and received by the photodiode 65 so as to be closer to a more vertical angle, by a combination of ordinary optical materials. In addition, for light having a large NA, such light can be deflected and made incident on the photodiode 65, so that sensitivity characteristics depending on the incident angle of the photodiode 65 can be improved.

  The light receiving unit 60 can be replaced with a light receiving unit 60A shown in FIG. Unlike the light receiving unit 60, the light receiving unit 60A uses a line sensor 65A as a light receiving device. As shown in FIG. 4, the light receiving unit 60A includes a window material 62, a line sensor 65A, electrodes 67A, bumps 68A, and a light shielding film 69A. In FIG. 4, the package 66 is not shown. Here, FIG. 4 is a schematic sectional view showing an example of the configuration of the light receiving unit 60A.

  The pixel 65Aa of the line sensor 65A is generally as small as several tens of μm, and it is difficult to configure the light receiving unit 60A with a normal optical material. Therefore, in the present embodiment, a concave surface (lens) 62c is formed on the window member 62 in correspondence with the pixel 65Aa of the line sensor 65A. As a result, the light of NA exceeding 1 incident on the pixel 65Aa of the line sensor 65A can be transmitted through the window material 62 (that is, transmitted through the concave surface 62c), and the line sensor 65A can transmit light of all NA. Can be detected. In other words, the line sensor 65A can detect light having an NA of 1 or less with respect to the normal direction at any one point of the concave surface 62c of the window member 62.

  Note that light having an NA of 1 or less in the normal direction of the window material 62 (or the line sensor 65A) also passes through a portion (flat portion) other than the concave surface 62c of the window material 62. It is necessary to cover with the light shielding film 69A. The light shielding film 69A is made of, for example, a metal film. In addition, the light transmitted through the concave surface 62c of the window material 62 is arranged close to the window material 62 side by the bump 68A because the whole light has a large spread angle. At this time, the control signal line of the line sensor 65A is caused to function via the electrode 67A and the bump 68A.

  The concave surface 62c of the window material 62 may be formed using each method for forming a three-dimensional shape. Further, depending on the size and accuracy of the concave surface 62c of the window material 62, the concave surface 62c can be formed even when wet etching is used after securing the arrangement of the light shielding film 69A and the etching selectivity.

  Furthermore, the light receiving unit 60 can be replaced with a light receiving unit B shown in FIG. The light receiving unit 60A was able to receive light of NA exceeding 1. Similarly to the light receiving unit 60A, the light receiving unit 60B can receive more than one light and can bring the light emission position closer to the line sensor 65A side. As shown in FIG. 5, the light receiving unit 60 includes a window material 62, a line sensor 65A, electrodes 67A, bumps 68A, and a light shielding film 69A. In FIG. 5, the package 66 is not shown. Here, FIG. 5 is a schematic cross-sectional view illustrating an example of the configuration of the light receiving unit 60B.

  Similarly to the light receiving unit 60A, the light receiving unit 60B uses the bump method to bond the electrodes 67A and the bumps 68A so that the line sensor 65A and the window material 62 are brought close to each other. In the bump method, the line sensor 65A and the window material 62 can be brought close to each other up to several tens of μm.

  In the light receiving unit 60B, light receiving protrusions 62d are formed on the window material 62 in correspondence with the pixels 65Aa of the line sensor 65A. The light receiving protrusion 62d can be formed by etching the window material 62 to a depth of several tens of μm. Furthermore, the light shielding film 69A can be removed only on the bottom surface 62e of the light receiving projection 62d by forming and polishing the light shielding film 69A on the window material 62 on which the light receiving projection 62d is formed. In the present embodiment, the light receiving protrusion 62d has a diameter of 40 μm and a height of 20 μm.

  Next, a concave shape was formed on the bottom surface 62e of the light receiving protrusion 62d, and a wiring pattern including an insulating structure was formed, and then integrated with the line sensor 65A by the bumps 64A.

  Thus, in the light receiving unit 60B, only the bottom surface 62e of the light receiving projection 62d does not have the light shielding film 69A, and the light incident on the window member 62 is repeatedly reflected at the interface with the light shielding film 69A toward the bottom surface 62e of the light receiving projection 62d. move on. Since the bottom surface 62e of the light receiving projection 62d has a concave shape, it has transparency to the light of each NA, and light is emitted from the light receiving projection 62d (the bottom surface 62e thereof).

  Thus, the light receiving unit 60B can emit light in the vicinity of the pixel 65Aa of the line sensor 65A, and can suppress crosstalk at a low level. In the present embodiment, the bottom surface 62e of the light receiving projection 62d has a spherical concave shape, but may have a conical cross section. Further, although processing becomes difficult, the same effect can be obtained even if a reverse taper is formed on the light receiving projection 62d.

  Returning to FIG. 1 again, the control unit 70 includes a CPU and a memory (not shown), and controls the operation of the exposure apparatus 1. The controller 70 is electrically connected to the illumination device 10, the reticle stage 25 (that is, the moving mechanism of the reticle stage 25), the wafer stage 45 (that is, the moving mechanism of the wafer stage 45), the liquid supply / discharge mechanism 50, and the light receiving unit 60. It is connected. The CPU includes any processor of any name such as MPU and controls the operation of each unit. The memory is composed of ROM and RAM, and stores firmware that operates the exposure apparatus 1.

  In this embodiment, the control unit 70 controls the exposure amount on the object 40 based on the detection result of the light receiving unit 60 (that is, the light amount on the object 40). Specifically, the control unit 70 moves the light receiving unit 60 two-dimensionally in the exposure amount distribution on the object 410 in various illumination modes (for the light receiving units 60A and 60B whose light receiving devices are line sensors). In such a case, the intensity of the light emitted from the light source unit 12 of the illuminating device 10, the reticle stage 25, and the wafer are measured so that the exposure amount becomes a predetermined value when scanning and exposure is performed. The scanning speed of the stage 45 is controlled. This makes it possible to accurately manage the exposure amount even with an immersion type exposure apparatus, and to exhibit excellent exposure performance.

  In the exposure, the light beam emitted from the light source unit 12 illuminates the reticle 20 by the illumination optical system 14, for example, Koehler illumination. The light that passes through the reticle 20 and reflects the reticle pattern is imaged by the projection optical system 30 onto the object 40 via the liquid WT. Since the exposure apparatus 1 can control the exposure amount on the workpiece 40 with high accuracy by the light receiving unit 70, the device (semiconductor element, LCD element, imaging) with excellent resolution and high throughput with high efficiency. An element (such as a CCD) or a thin film magnetic head) can be provided.

  Next, an embodiment of a device manufacturing method using the above-described exposure apparatus 1 will be described with reference to FIGS. FIG. 6 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like). Here, the manufacture of a semiconductor chip will be described as an example. In step 1 (circuit design), a device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and the wafer. Step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer created in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 7 is a detailed flowchart of the wafer process in Step 4. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the exposure apparatus 1 to expose a circuit pattern on the mask onto the wafer. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer. According to the device manufacturing method of the present embodiment, it is possible to manufacture a higher quality device than before. Thus, the device manufacturing method using the exposure apparatus 1 and the resulting device also constitute one aspect of the present invention.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist. For example, the imaging position of the projection optical system can be detected by a light receiving unit, and the position of the object to be processed or the imaging position of the projection optical system can be controlled based on the detection result.

It is a schematic sectional drawing which shows the structure of the exposure apparatus as one side surface of this invention. It is a schematic sectional drawing which shows an example of a structure of the light reception unit shown in FIG. 3 is a graph showing the distribution of light emitted from the first hemispherical lens when there is no second hemispherical lens shown in FIG. 2. It is a schematic sectional drawing which shows the structure of the light-receiving unit which is a modification of the light-receiving unit shown in FIG. It is a schematic sectional drawing which shows the structure of the light-receiving unit which is a modification of the light-receiving unit shown in FIG. It is a flowchart for demonstrating manufacture of devices (semiconductor chips, such as IC and LSI, LCD, CCD, etc.). 7 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 6.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 10 Illumination apparatus 20 Reticle 30 Projection optical system 40 Object 50 Liquid supply / discharge mechanism 60, 60A and 60B Light receiving unit 61 First hemispherical lens 61a Spherical surface 62b Ejection surface 62 Window material 62c Concave surface 62d Light receiving projection 62e Bottom surface 63 Light-shielding pattern 64 Second hemispherical lens 64a Final exit surface 64b Side surface 65 Photodiode 65A Line sensor 65Aa Pixel 67A Electrode 68A Bump 69A Light-shielding film 70 Controllers L1 to L3 Light

Claims (6)

An exposure apparatus that includes a projection optical system that projects light from a reticle onto a target object, and that exposes the target object via a liquid filled between the projection optical system and the target object,
A light receiving unit having a light receiving device for receiving light that has passed through the projection optical system and the liquid;
The light receiving unit is
A window material for transmitting light having passed through the pre-Symbol projection optical system and the liquid,
Deflecting means that contacts the window material, transmits and reflects light transmitted through the window material, and guides the light to the light receiving device;
The exposure apparatus, wherein the deflecting means has a conical surface on its side surface for guiding the light transmitted through the window material to the light receiving device . An exposure apparatus that includes a projection optical system that projects light from a reticle onto a target object, and that exposes the target object via a liquid filled between the projection optical system and the target object,
A light receiving unit having a line sensor for receiving the light passing through the projection optical system and the liquid;
The light receiving unit is
Has a window material for transmitting light having passed through the pre-Symbol projection optical system and the liquid,
The line sensor side surface of the window material includes a plurality of concave surfaces formed corresponding to the plurality of pixels of the line sensor,
Exposure apparatus, characterized in that, the plurality of concave non-barrier to the flat portion of light film of said line sensor-side surface of the window material is formed. The exposure apparatus according to claim 2, wherein the concave surface is a conical surface or a spherical surface. The exposure apparatus according to any one of claims 1 to 3, characterized in that a control unit for controlling the light quantity detection results on pre Symbol workpiece based of the light receiving unit. According to any one of claims 1 to 3, characterized in that a control unit for controlling the position or the imaging position of the projection optical system before Symbol workpiece on the basis of the detection result of the light receiving unit Exposure equipment. Comprising the steps of exposing an object using an exposure apparatus according to any one of claims 1 to 5,
Device manufacturing method characterized by having a step of developing the object to be processed that has been exposed in the step.