JP2007329289A - Method of manufacturing optical component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical component suitable for detecting light having a large NA in an exposure apparatus. <P>SOLUTION: A method is provided for manufacturing the optical component to be used in the exposure apparatus which exposes a substrate by projecting a pattern of a reticle on the substrate via a projection optical system. The method includes a diffusion plane formation process wherein a diffusion plane 3 is formed on a first plane of the translucent substrate 1S, and a mark formation process wherein a mark 2 is formed on a second plane of the translucent substrate 1S. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an exposure apparatus, and more particularly to a method for manufacturing an optical component used in the exposure apparatus.

  Devices such as semiconductor devices and liquid crystal display devices are manufactured through a photolithography process. In the photolithography process, a reduction projection exposure apparatus is used that projects a circuit pattern formed on an original such as a reticle onto a substrate such as a wafer through a projection optical system to transfer the circuit pattern.

  The minimum dimension (resolution) that can be transferred by the reduction projection exposure apparatus is proportional to the wavelength of the exposure light and inversely proportional to the numerical aperture (NA) of the projection optical system. Therefore, the resolution can be improved by shortening the wavelength and increasing the NA.

  In the approach by shortening the exposure light wavelength, for example, the wavelength is shortened from a KrF excimer laser (wavelength: about 248 nm) to an ArF excimer laser (wavelength: about 193 nm).

In the approach by increasing the NA of the projection optical system, immersion exposure has attracted attention (Patent Document 1). Immersion exposure is a method in which a liquid (immersion material) is used as a medium on the wafer side (image plane side) of the projection optical system. The NA of the projection optical system is NA = n · sin θ, where n is the refractive index of the medium. Therefore, NA can be increased to n by filling the space through which the exposure light passes between the projection optical system and the wafer with a medium (liquid) having a refractive index (n> 1) higher than the refractive index of air. . In other words, the immersion exposure improves the resolution by setting the NA of the projection optical system as viewed from the wafer side to 1 or more.
JP-A-10-303114 JP 2005-268744 A

  A sensor unit that detects light incident through the projection optical system and the immersion liquid can be disposed on the wafer stage. The sensor unit can include a light receiving element and a glass plate covering the light receiving element. The space between the light receiving element and the glass plate can be filled with air. Of the light that passes through the projection optical system and the liquid for immersion, NA of more than 1 is totally reflected at the boundary surface between the glass plate of the sensor unit and the air below it, and is emitted into the air. I can't do it. This means that light information with NA exceeding 1 cannot be detected by the sensor unit.

  An object of the present invention is to provide an optical component suitable for detecting light having a large NA in, for example, an exposure apparatus.

  A first aspect of the present invention is directed to a method of manufacturing an optical component used in an exposure apparatus that exposes a substrate by projecting a reticle pattern onto the substrate via a projection optical system, and the manufacturing method includes: A diffusion surface forming step of forming a diffusion surface on the first surface of the transmissive substrate; and a mark forming step of forming a mark on the second surface of the light transmissive substrate.

  According to a preferred embodiment of the present invention, the manufacturing method may further include a light shielding film forming step of forming a light shielding film on the second surface. In the mark forming step, the mark can be formed by patterning the light shielding film.

  According to a preferred embodiment of the present invention, the diffusion surface formation step can be performed after the light shielding film formation step, and the mark formation step can be performed after the diffusion surface formation step.

  According to a preferred embodiment of the present invention, the light shielding film forming step can be performed after the diffusion surface forming step, and the mark forming step can be performed after the light shielding film forming step.

  According to a preferred embodiment of the present invention, the method further includes a protection step of protecting the mark with a protective material after the mark formation step, and the diffusion surface formation step can be performed after the protection step.

  According to a preferred embodiment of the present invention, in the diffusion surface forming step, a diffusion surface can be partially formed with respect to the first surface.

  The second aspect of the present invention is directed to a method for manufacturing an optical component used in an exposure apparatus that exposes a substrate by projecting a reticle pattern onto the substrate via a projection optical system. A diffusion surface forming step of forming a diffusion surface on the one light transmissive substrate; a mark forming step of forming a mark on the second light transmissive substrate; and the first light transmissive substrate and the A bonding step of bonding the second light transmitting substrate.

  In the first and second aspects of the present invention, the optical component is, for example, a component of a sensor unit that is arranged on a substrate stage for positioning a substrate to be exposed and detects light.

  A third aspect of the present invention is directed to an exposure apparatus that exposes the substrate by projecting a reticle pattern onto the substrate via a projection optical system, and the exposure apparatus is disposed on a substrate stage that positions the substrate. The sensor unit includes a light receiving element and an optical component disposed between the light receiving element and the projection optical system, and the optical component has a diffusion surface formed thereon. The first light-transmitting substrate and the second light-transmitting substrate on which the mark is formed are coupled so that the diffusion surface is exposed, and the diffusion surface faces the light receiving element.

  A fourth aspect of the present invention relates to a device manufacturing method, and the manufacturing method includes a step of exposing a substrate using the exposure apparatus and a step of developing the substrate.

  According to the present invention, for example, an optical component suitable for detecting light having a large NA in an exposure apparatus can be provided.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. [First embodiment]
FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to a preferred embodiment of the present invention. An exposure apparatus 200 according to a preferred embodiment of the present invention includes an illumination system 110, a reticle stage (original stage) 120, a projection optical system 130, a wafer stage (substrate stage) 140, and a sensor unit 100.

  The exposure apparatus 200 transfers the circuit pattern formed on the reticle (original) RC to the photosensitive agent on the surface of the wafer (substrate) W to be exposed by, for example, a step-and-repeat method or a step-and-scan method.

  The exposure apparatus 200 can be configured as an immersion exposure apparatus that fills a liquid in a space through which exposure light passes between the projection optical system 130 and the wafer W. In immersion exposure, the NA of the projection optical system 130 can be 1 or more.

  The illumination system 110 illuminates the reticle RC on which a transfer circuit pattern is formed. The illumination system 110 includes, for example, a light source unit 111 and an illumination optical system 113.

The light source unit 111 includes, for example, a laser. As the laser, for example, an ArF excimer laser having a wavelength of about 193 nm, a KrF excimer laser having a wavelength of about 248 nm, and an F ₂ laser having a wavelength of about 157 nm are suitable. For example, a YAG laser may be used. The light source unit 111 may include a plurality of lasers. For example, when two or more solid-state lasers that operate independently are used, there is no mutual coherence between the solid-state lasers, so speckle due to coherence is reduced. Furthermore, the optical system may be driven linearly and / or rotationally to reduce speckle. When a laser is used for the light source unit 11, it is preferable to use a light beam shaping optical system that shapes a parallel light beam from the laser into a desired cross-sectional shape and an incoherent optical system that makes a coherent laser beam incoherent. The light source that can be used for the light source unit 111 is not limited to a laser, and one or a plurality of lamps such as a mercury lamp and a xenon lamp can also be used.

  The illumination optical system 113 is an optical system that illuminates the mask RC, and may include, for example, a lens, a mirror, a light integrator, and a diaphragm. The illumination optical system 113 can be used regardless of axial light or off-axis light. The light integrator can be configured, for example, by stacking a fly-eye lens or two sets of cylindrical lens array (or lenticular lens) plates. The light integrator can be replaced with an optical rod or a diffractive element.

  Reticle stage 120 supports and drives reticle RC. The reticle RC is formed, for example, by forming a circuit pattern (or image) to be transferred on a quartz member.

  Diffracted light emitted from the reticle RC passes through the projection optical system 130 and is projected onto the wafer W. The reticle RC and the wafer W are in a conjugate relationship. When the exposure apparatus 200 is configured as a scanning exposure apparatus, the pattern of the reticle RC is transferred onto the wafer W while scanning the reticle RC and the wafer W. When the exposure apparatus 200 is configured as a stepper (step and repeat exposure type exposure apparatus), the exposure is performed with the reticle RC and the wafer W being stationary.

  As the projection optical system 130, an optical system composed of only a plurality of lens elements, an optical system having a plurality of lens elements and at least one concave mirror, an optical system having a diffractive optical element, an all-mirror optical system, and the like. Can be used. When correction of chromatic aberration is required, a plurality of lens elements made of glass materials having different dispersion values (Abbe values) can be used, or the diffractive optical element can be configured to generate dispersion in the opposite direction to the lens element. To do.

  A photoresist (photosensitive agent) is applied to the wafer W. The photoresist coating process includes a pretreatment, an adhesion improver coating process, a photoresist coating process, and a prebaking process. Pretreatment includes washing, drying and the like. The adhesion improver coating process is a surface modification process (that is, a hydrophobic process by application of a surfactant) for improving the adhesion between the photoresist and the base. In the adhesion improver coating process, for example, an organic film such as HMDS (Hexethyl-disilazane) is coated or steamed. Pre-baking is a baking (baking) step, but is softer than that after development, and removes the solvent.

  Wafer stage 140 supports wafer W. The wafer stage 140 is driven by, for example, a linear motor, and can position the wafer W in the XYZ directions. When exposure apparatus 200 is configured as a scanning exposure apparatus, reticle RC and wafer W are scanned synchronously. At this time, the positions of the reticle stage 120 and the wafer stage 140 are monitored by a laser interferometer, for example, and both are driven at a constant speed ratio. The wafer stage 140 is, for example, a projection optical system 130 provided on a stage surface plate supported on a floor or the like via a damper, and a lens barrel (not shown) supported on a base frame via a damper or the like, for example. Provided on the surface plate.

  The sensor unit 100 is disposed on the wafer stage 140. The sensor unit 100 can be used, for example, to position the wafer stage 140 (wafer W) in the Z direction (optical axis direction) and the XY direction (direction perpendicular to the optical axis). The sensor unit 100 can include a reference plate (optical component) 1 on which the mark 2 is formed and a sensor 4. The mark 2 is arranged at substantially the same height as the surface height of the wafer W (that is, the image side focal point of the projection optical system 130).

  On the reticle stage 120, a reference plate 122 on which a mark 124 is formed is disposed. The mark 124 is disposed at substantially the same height as the height of the pattern surface of the reticle RC (that is, the object side focal point of the projection optical system 130).

  The mark 124 formed on the reference plate 12 is illuminated by the illumination optical system 110 and is projected through the projection optical system 130 onto the reference plate 1 on which the mark 2 is formed. The amount of light transmitted through the reference plate 1 is detected by the sensor 4. An image formed by projecting the mark 124 onto the reference plate 1 has the same shape and size as the mark 2. The focus of the projection optical system 130 can be detected by adjusting the position of the wafer stage 140 in the Z direction and the XY direction so that the amount of light detected by the sensor 4 is maximized. At the same time, the positional relationship between the reticle stage 120 and the wafer stage 140 in the XY directions can be detected.

  FIG. 2 is a cross-sectional view illustrating a configuration example of the sensor unit 100. The sensor unit 100 can include a reference plate (optical component) 1, a sensor 4, and a holder 5. The sensor 4 includes a light receiving element such as one or a plurality of photodiodes. The reference plate 1 includes a light transmissive substrate 1S such as a quartz substrate, and the light transmissive substrate 1S has a second surface and a first surface. The first surface is a surface on the sensor 4 side, and the second surface is a surface on the projection optical system 130 side. A diffusion surface 3 is formed on at least a part of the first surface. The reference plate 1 has a light shielding film on which a mark 2 is formed on the second surface side of the light transmissive substrate 1. The diffusion surface 3 of the reference plate 4 faces the sensor 4, and the space S between the reference plate 4 and the sensor 4 can be filled with a gas such as air or maintained in a vacuum.

  The pattern including the mark 2 can be formed by forming a light shielding film on the second surface of the light transmissive substrate 1S and then patterning the light shielding film by a method such as lithography. The light shielding film can be made of a material that can shield exposure light used in the exposure apparatus, for example, a material selected from Cr, Si, Ta, W, and Al. The mark 2 may include, for example, one or more line marks, one or more circular marks, one or more cross marks, or a combination thereof.

  The light that has passed or passed through the mark 2 passes through the light-transmitting substrate 1S and reaches the diffusion surface 3. The diffusion surface 3 includes various inclined surfaces with respect to the vertical direction (Z direction or optical axis direction) of the exposure apparatus. Having multiple inclined surfaces in the vertical direction means that the incident angle of the incident light beam is converted according to the angle of the incident inclined surface. Therefore, even light with NA exceeding 1 can be emitted into the air from the slope where the incident angle decreases. Furthermore, according to the law of refraction, the light from the slope that refracts the light beam in a direction perpendicular to the surface of the sensor 4 is efficiently received by the sensor 4.

  In immersion exposure that fills a liquid in a space through which exposure light passes between the projection optical system 130 and the wafer W, the NA of the projection optical system 130 can be 1 or more. When the space S between the reference plate 1 and the sensor 4 is filled with gas or maintained in a vacuum, if the diffusion surface 3 is not formed, NA of the light transmitted through the mark 2 is 1 The light exceeding 1 is totally reflected at the boundary surface between the reference plate 1 and the space S. When such total reflection occurs, the sensor 4 does not have sensitivity to light with NA exceeding 1, so that the focus of the projection optical system 130 cannot be accurately detected.

  The sensor 4 and the reference plate 1 are fixed to the holder 5. The reference plate 1 can be fixed to the mounting surface 5m of the holder 5 with an adhesive, for example. The sensor 4 can be fixed to the holder 5 by a bonding process. In FIG. 2, electrical wiring and the like are omitted.

  The holder 5 is mounted so that the mark 2 is substantially the same height as the surface of the same surface plate 12. The mark 2 is typically arranged such that its center substantially coincides with the center of the light transmissive substrate 1S. The diffusing surface 3 is typically arranged so that its center substantially coincides with the center of the mark 2.

  Of the first surface of the light-transmitting substrate 1S (the surface on the sensor 4 side), it is preferable that the coupling portion with the holder 5 is a plane portion 1m, and the diffusion surface 3 is formed inside the coupling portion. In this case, the positional relationship between the holder 5 and the light-transmitting substrate 1S is determined by the planar portion 1m and the mounting surface 5m of the holder 5. Therefore, the positional relationship between the holder 5 and the light transmissive substrate 1S (as a result, the sensor 4 and the same surface plate 12) can be determined with higher accuracy than when the holder 5 is coupled to the diffusion surface. Moreover, the airtightness of the space S can be improved by providing the light transmitting substrate 1S with the flat portion 1m and coupling the flat portion 1m and the mounting surface 5m.

  By forming the diffusing surface 3 on the light transmissive substrate 1S, the surface area of the light transmissive substrate 1S is increased, so that the light transmittance is likely to change due to adhesion of contaminants to the diffusing surface 3. Therefore, it is preferable to fill the space S with an inert gas such as nitrogen gas. The improvement in confidentiality contributes to the maintenance of inert gas and improves the stability of the sensor unit 100.

  A method for manufacturing the reference plate 1 will be exemplarily described with reference to FIG. In the step shown in FIG. 3A, the diffusion surface 3 is formed on the first surface of the light transmissive substrate 1S such as a quartz substrate (diffusion surface forming step), and the light shielding film 6 is formed on the second surface of the light transmissive substrate 1S. Is formed (mark formation step). Here, the diffusion surface 3 may be formed after the light shielding film 6 is formed, or the light shielding film 6 may be formed after the diffusion surface 3 is formed. However, the formation of the diffusion surface 3 after the formation of the light shielding film 6 eliminates the possibility that the light shielding film is formed on the diffusion surface 3 or the diffusion surface 3 is contaminated during the process of forming the light shielding film 6. Can do.

  The diffusion surface 3 can be formed, for example, by subjecting the first surface of the light-transmitting substrate 3 to grinding or blasting. When the diffusion surface 3 is partially formed with respect to the first surface of the light-transmitting substrate 1S, blasting that can easily limit the processing region with a mask is advantageous. When the plane portion 1m and the diffusion surface 3 are defined on the first surface of the light transmissive substrate 1S, it is preferable that the highest portion (convex portion) of the diffusion surface 3 is lower than the plane portion 1m. According to such a structure, the diffusing surface 3 is protected by the presence of the flat portion 1m.

  In the step shown in FIG. 3B, the mark 2, for example, a line and space pattern is formed by a lithography process, for example. The reference plate (optical component) 1 is obtained through the above steps. Here, if a method of partially forming the diffusion surface 3 with respect to the light transmissive substrate 1S is employed, it is easy to operate the light transmissive substrate 1S in the lithography process. FIG. 4 is a diagram illustrating an example of a transport system of the process apparatus. In FIG. 4, the light transmissive substrate 1S is viewed from the lower surface. The suction port 9 of the transport hand 10 that operates the light-transmitting substrate 1S is preferably disposed so as to suck a portion of the entire surface of the light-transmitting substrate 1S where the diffusion surface 3 is not disposed. Thereby, the adsorption | suction defect by the suction opening 9 overlapping the rough surface which is the diffusion surface 3 is prevented.

  Further, the sensor unit 100 is obtained by fixing the sensor 4 to the holder 5 and fixing the reference plate 1 to the mounting surface 5 m of the holder 5.

  Second Embodiment The second embodiment provides another method for manufacturing the reference plate 1. Matters not mentioned here can follow the first embodiment as long as there is no contradiction. FIG. 5 is a diagram illustrating a method of manufacturing the reference plate 1 according to the second embodiment of the present invention. First, in the process shown in FIG. 5A, the light shielding film 6 is formed on the second surface of the light transmissive substrate 1S such as a quartz substrate (light shielding film forming process). Next, in the process shown in FIG. 5B, the mark 2 is formed by patterning the light shielding film 6 by lithography or the like.

  Next, in the step shown in FIG. 5C, after the surface of the light shielding film 6 on which the mark 2 is formed is protected by the protective material 8 (protection step), the first surface of the light transmissive substrate 1S is polished with the polishing pad 7. The diffusion surface 3 is formed by polishing. As the protective material 8, for example, an adhesive-type protective sheet or a coating-type material can be used. As the protective material 8, for example, a resist protective sheet used in lithography is suitable. The diffusion surface 3 may be partially formed on the light-transmitting substrate 1S by partial blasting or partial grinding.

  5D, the protective material 8 is removed from the light shielding film 6 on which the mark 2 is formed.

  In the step shown in FIG. 5 (e), a portion to be used as the reference plate 1 is cut out from the light transmissive substrate 1S and coupled to the reference plate 1 or the holder 5 (not shown). At this time, the reference plate 1 is positioned so that the light shielding film 6 on which the mark 2 is formed and the same surface plate 12 constitute the same surface. As illustrated in FIG. 5E, the positioning can be performed using gravity with the light shielding film 6 on which the mark 2 is formed facing downward. The reference plate 1 can be fixed not only by bonding but also by mechanical fastening means.

[Third embodiment]
The third embodiment provides another method for manufacturing the reference plate 1. Matters not mentioned here can follow the first embodiment as long as there is no contradiction.

  FIG. 6 is a diagram illustrating a method of manufacturing the reference plate 1 according to the third embodiment of the present invention. First, in the step shown in FIG. 6A, after the second surface of the light transmissive substrate 1S1 such as a quartz substrate is protected by the protective material 8, the first surface of the light transmissive substrate 1S1 is polished by the polishing pad 7. Thus, the diffusion surface 3 is formed. As the protective material 8, for example, an adhesive-type protective sheet or a coating-type material can be used. For example, a resist protective sheet used in lithography is suitable.

  On the other hand, in the process shown in FIG. 6B, the light shielding film 6 is formed on the second surface of the light transmitting substrate 1S2 such as a separately prepared quartz substrate, and in the process shown in FIG. 6C, the light shielding is performed by the lithography process. The film 6 is patterned to form the mark 2. Also when the mark 2 is formed, the protective material 8 may be formed on the opposite surface.

  In the step shown in FIG. 6 (d), the reference plate is formed by bonding the separately manufactured substrate with diffusion surface 1S1 and the substrate with mark 1S2 by a bonding method such as optical contact or crystal direct bonding so that the diffusion surface is exposed. 1 is formed (bonding step). When it is assumed that ArF laser light (wavelength: 193 nm) is used as exposure light, an adhesive that absorbs light having such a wavelength should not be used for bonding.

[Device manufacturing method]
The exposure apparatus of the present invention is suitable for manufacturing semiconductor devices such as LSIs, display devices such as liquid crystal panels, detection devices such as magnetic heads, various devices such as CCD imaging devices, and fine patterns used in micromechanics.

  Next, a device manufacturing process using the exposure apparatus of the present invention will be described. Here, a semiconductor device manufacturing process will be described as an example. FIG. 7 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (reticle fabrication), a reticle (also referred to as an original or a mask) is fabricated based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer (also referred to as a substrate) is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the reticle and wafer. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the above exposure apparatus is used to expose a wafer coated with a photosensitive agent through a mask on which a circuit pattern is formed, thereby forming a latent image pattern on the resist. In step 17 (development), the resist transferred to the wafer is developed to form a resist pattern. In step 18 (etching), the layer or substrate under the resist pattern is etched through the portion where the resist pattern is opened. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a figure which shows schematic structure of the exposure apparatus of suitable embodiment of this invention. It is a figure which shows schematic structure of the sensor unit of suitable embodiment of this invention. It is a figure which shows the manufacturing method of the reference | standard board of 1st Embodiment of this invention. It is a figure which shows an example of the conveyance system of a process apparatus. It is a figure which shows the manufacturing method of the reference | standard board of 2nd Embodiment of this invention. It is a figure which shows the manufacturing method of the reference | standard board of 3rd Embodiment of this invention. It is a figure which shows the flow of the whole manufacturing process of a semiconductor device. It is a figure which shows the detailed flow of a wafer process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reference | standard board 1S Light transmissive board | substrate 1m Plane part 2 Mark 3 Diffusion surface 4 Sensor 5 Holder 5m Mounting surface 100 Sensor unit S Space

Claims (10)

A method of manufacturing an optical component used in an exposure apparatus that projects a reticle pattern onto a substrate via a projection optical system to expose the substrate,
A diffusion surface forming step of forming a diffusion surface on the first surface of the light transmissive substrate;
A mark forming step of forming a mark on the second surface of the light transmissive substrate;
The manufacturing method of the optical component characterized by including.   The optical component according to claim 1, further comprising a light shielding film forming step of forming a light shielding film on the second surface, wherein the mark is formed by patterning the light shielding film in the mark forming step. Manufacturing method.   3. The method of manufacturing an optical component according to claim 2, wherein the diffusion surface formation step is performed after the light shielding film formation step, and the mark formation step is performed after the diffusion surface formation step.   3. The method of manufacturing an optical component according to claim 2, wherein the light shielding film forming step is performed after the diffusion surface forming step, and the mark forming step is performed after the light shielding film forming step.   The method of manufacturing an optical component according to claim 1, further comprising a protection step of protecting the mark with a protective material after the mark formation step, and performing the diffusion surface formation step after the protection step.   6. The method of manufacturing an optical component according to claim 1, wherein in the diffusion surface forming step, a diffusion surface is partially formed with respect to the first surface. A method of manufacturing an optical component used in an exposure apparatus that projects a reticle pattern onto a substrate via a projection optical system to expose the substrate,
A diffusion surface forming step of forming a diffusion surface on the first light-transmitting substrate;
A mark forming step of forming a mark on the second light transmitting substrate;
A bonding step of bonding the first light transmissive substrate and the second light transmissive substrate so that the diffusion surface is exposed;
The manufacturing method of the optical component characterized by including.   8. The optical component manufacturing method according to claim 1, wherein the optical component is a component of a sensor unit that is arranged on a substrate stage for positioning a substrate to be exposed and detects light. Method. An exposure apparatus that exposes a substrate by projecting a reticle pattern onto the substrate via a projection optical system,
A sensor unit for detecting light disposed on a substrate stage for positioning the substrate;
The sensor unit includes a light receiving element, and an optical component disposed between the light receiving element and the projection optical system,
The optical component has a structure in which a first light transmissive substrate on which a diffusing surface is formed and a second light transmissive substrate on which a mark is formed are coupled so that the diffusing surface is exposed. Facing the light receiving element,
An exposure apparatus characterized by that. A device manufacturing method comprising:
Exposing the substrate using the exposure apparatus according to claim 9;
Developing the substrate;
A device manufacturing method comprising:

Images