JP2006261334A - Exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique capable of highly precisely measuring high NA light in a projection exposure apparatus without the use of sealing liquid. <P>SOLUTION: The exposure apparatus for exposing an original forme pattern to a substrate comprises a projection optical system for illuminating the original forme pattern and projecting it to the substrate, and measuring means for receiving projection light passing the projection optical system and measuring an amount of the light. The measuring means receives the projection light via a light guide member for guiding, in such a way that an image received at an incidence surface and an image emanating at an exit surface are substantially same or are similar. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an exposure technique for exposing an original pattern to a substrate via a projection optical system, and more particularly to an immersion exposure technique for exposing an original pattern to the substrate in a state where a gap between the projection optical system and the substrate is filled with a liquid.

With the progress of miniaturization of semiconductor elements, the exposure light source has conventionally shifted from the g-line of a high-pressure mercury lamp to an i-line with a shorter wavelength, and further to a KrF excimer laser and an ArF excimer laser with a shorter wavelength. Since higher resolution is required, the NA (numerical aperture) of the projection lens must be increased, and the depth of focus tends to become increasingly shallow. These relationships can be expressed by the following equations as is generally well known.
(Resolution) = k1 (λ / NA)
(Depth of focus) = ± k2 λ / NA2
Here, λ is the wavelength of the light source used for exposure, NA is the NA (numerical aperture) of the projection lens, and k1 and k2 are coefficients related to the process.

  In recent years, KrF and ArF excimer lasers with shorter wavelengths have been used from the g-line and i-line of conventional high-pressure mercury lamps, and the use of F2 excimer lasers, EUV light sources, and X-rays is also being studied. . On the other hand, a high resolution and high depth technology using a phase shift mask or modified illumination has been put into practical use. However, the method using an F2 excimer laser, EUV light source, or X-ray has problems such as high apparatus cost.

  Therefore, an attempt has been made to apply the liquid immersion method to a projection exposure apparatus using an existing ArF excimer laser.

  Here, the immersion projection exposure apparatus will be described. As shown in FIG. 12, the wafer is filled with a high refractive index liquid (immersion liquid) 25 between the wafer 2 and the projection lens 7 facing the wafer 2. It is a projection exposure apparatus that performs exposure, and is a projection exposure apparatus that utilizes the effect of immersion.

The “immersion effect” means that λ 0 is the wavelength of the exposure light in the air, n is the refractive index of the immersion liquid 25 with respect to the air, and α is the convergence angle of the light beam, as shown in FIG. When NA0 = sin α, the above-described resolving power and depth of focus are expressed by the following equations when immersed.
(Resolving power) = k1 (λ0 / n) / NA0
(Depth of focus) = ± k2 (λ0 / n) / (NA0) 2
That is, the effect of immersion is equivalent to using an exposure wavelength having a wavelength of 1 / n. In other words, when a projection optical system having the same NA is designed, the depth of focus can be increased by n times by immersion. This is effective for any pattern shape, and can be combined with a phase shift method, a modified illumination method, or the like. In order to take advantage of this immersion effect, precise management of the purity, uniformity, temperature, etc. of the liquid is necessary. In an exposure apparatus that sequentially exposes a wafer by step-and-repeat operation, It is important to minimize the flow and vibration of the liquid generated during operation, and how to remove bubbles remaining on the wafer surface when the wafer is carried into the liquid.

  Further, in a conventional projection exposure apparatus that is not a liquid immersion type, an illuminance unevenness sensor that measures the illuminance of exposure light irradiated on the wafer and the illuminance unevenness of exposure light is generally mounted in the vicinity of the wafer. is there. In general, a calibration mechanism is provided in the vicinity of the wafer to periodically measure the magnification of the projection lens and the focal position fluctuation and correct the exposure.

  The calibration mechanism constitutes a so-called reference mark in which a sensor is placed under quartz glass in which a bar-like pattern 28b as shown in FIG. In this usage, a pattern similar to that shown in FIG. 4 is formed on the reticle, and this pattern image is projected onto the pattern on the reference mark. At this time, the amount of light that has passed through the pattern on the reference mark is measured by a sensor below the mark pattern. When in focus, the reticle pattern image matches the reference mark pattern, so that the amount of light received by the sensor is maximized. When the focus is out of focus, the reticle pattern image is blurred and projected onto the reference mark pattern, so the amount of sensor light also decreases.

  Therefore, it is possible to perform focus calibration by changing the focus while measuring the sensor light quantity and finding the focus position where the sensor light quantity is maximized. Similarly, when the reference mark is displaced with respect to the reticle pattern image in the wafer movement direction (XY direction) instead of the focus direction, the amount of sensor light similarly changes. Accordingly, it is possible to detect a deviation in the XY directions. That is, it can also be used as a wafer alignment sensor. In addition, a line sensor composed of a large number of pixels used for in-shot exposure unevenness measurement and effective light source measurement, and a two-dimensional CCD used for measuring aberration of the projection lens may be mounted.

Such a sensor is preferably used for measurement in an immersion state as in a wafer in an immersion projection exposure apparatus in consideration of measurement accuracy and the like.
JP-A-6-124873 International Publication No. 99/049504 Pamphlet JP-A-10-303114

  FIG. 11 shows a configuration of a conventional illuminance unevenness sensor. A light shielding member 28 having a pinhole pattern 28 a as shown in FIG. 3 is provided in the opening of the sensor container 22, and light is received on the bottom surface in the sensor container 22. The element 23 is arranged, and the container 22 is hermetically sealed with a sealing window 21 made of quartz glass or the like. The light receiving element 23 is hermetically sealed with a sealing window 21 because there is a risk of characteristic deterioration due to the influence of humidity or the like. When light is incident on a sensor having such a structure, refraction occurs at the boundary between the outside air and the sealing window 21, and the boundary between the sealing window 21 and the inner space of the sensor container 22, as known as Snell's law. .

Here, the refractive index n1 of the sensor external space, the refractive index n2 of the sealing window, the refractive index n3 of the sensor internal space, the incident angle θi1 of light with respect to the boundary surface between the sensor external space and the sealing window, the refractive angle θr1, the sealing Assuming that the incident angle θi2 and the refraction angle θr2 of the light with respect to the interface between the window 22 and the sensor internal space are Snell's law,
n2 · sin θi2 = n3 · sin θr2 (1)
Therefore,
sin θr2 = (n2 / n3) · sin θi2
When n2> n3, light is not refracted and total reflection occurs for θi2 ′ (critical angle) of sin θi2 ′ = n3 / n2 or more.

The NA of the projection lens is
NA = n1 · sin θi1 (2)
Is required.

In a conventional projection exposure apparatus that is not immersion type, since the sensor external space is air, the refractive index n1 = 1. When the refractive index is 1, NA is less than 1.0, and is actually about 0.9 at most. When NA = 0.83, the incident angle θi1 = 56.44 °. If the sealing window is made of quartz glass, the refractive index n2 = 1.56. Therefore, from Snell's law, the refraction angle θr1 at the boundary surface between the sensor external space and the sealing window is 32.29 °. Further, from the relationship of θr1 = θi2, the incident angle θi2 of light with respect to the boundary surface between the sealing window and the sensor internal space is also θi2 = 32.29 °. The critical angle θi2 ′ at the interface between the sealing window and the sensor internal space is
sin θi2 ′ = n3 / n2 = 1 / 1.56 = 0.64
Therefore, θi2 ′ = 39.9 °, and θi2 ′> θi2, so that total reflection does not occur, and light can reach the surface of the light receiving element.

On the other hand, in the immersion type projection exposure apparatus, the sensor external space is filled with liquid. Assuming that the liquid is pure water, the refractive index of pure water is 1.44. If the refractive index n1 = 1.44 in the above example, the incident angle θi1 = 56.44 ° and the refractive index n2 = 1.56. Therefore, from Snell's law, the boundary surface between the sensor external space and the sealing window In this case, the refraction angle θr1 is 50.28 °. Further, from the relationship of θr1 = θi2, the incident angle θi2 of light with respect to the boundary surface between the sealing window and the sensor internal space is also θi2 = 50.28 °. The critical angle θi2 ′ at the boundary surface between the sealing window and the sensor internal space is the same as above,
sin θi2 ′ = n3 / n2 = 1 / 1.56 = 0.64
Therefore, θi2 ′ = 39.9 °, and θi2 ′ <θi2, and thus total reflection occurs. Therefore, the light is totally reflected at the boundary surface with the sealing window and does not reach the surface of the light receiving element, and the light of all NA cannot be measured accurately. This not only affects the illuminance unevenness sensor but also has the same adverse effect on the above-described calibration sensor and the like.

  The above is a problem with the immersion type projection exposure apparatus. However, in the projection exposure apparatus with a high NA, there is a factor that decreases the measurement accuracy of the sensor even in the conventional method that is not the immersion type. In general, a light quantity sensor has a characteristic that sensitivity changes depending on an incident angle of light with respect to a light receiving surface. Therefore, in the conventional projection exposure apparatus, the light can reach the light receiving element without being totally reflected. However, since the incident angle with respect to the light receiving surface of the sensor is large, an accurate light amount is affected by the influence of the sensitivity angle characteristics. There was a problem that measurement could not be performed.

  As means for solving these problems, as shown in FIG. 8, a method is proposed in which the space between the sealing window 21 and the light receiving element 23 is filled with a liquid 31 having a refractive index substantially equal to that of the immersion liquid. However, in this method, (a) precise management of the sealing liquid 31 is required, (b) the requirements for the characteristics of the sealing liquid 31 are strict, and (c) the requirements for the characteristics of the coating member 29 are strict. This is a problem. For example, the sealing liquid 31 has (1) a refractive index substantially equal to that of the immersion liquid, (2) a good transmittance for exposure light, and (3) little deterioration with respect to the exposure light. 4) The characteristics that the light receiving element 23 is not deteriorated and (5) the transmittance is not changed are required.

  Further, the coating member 29 has (1) a refractive index substantially equal to or larger than that of the sealing liquid 31, (2) a good transmittance with respect to the exposure light, and (3) little deterioration due to the exposure light, (4) The characteristic that the light receiving element 23 is not deteriorated in characteristics and (5) resistant to the sealing liquid 31 is required. Because of these restrictions, it is very difficult to realize a high NA light measuring means using the sealing liquid 31, and an alternative means that can be realized without using the sealing liquid is required.

  The present invention has been made in view of the above problems, and an object thereof is to realize a technique capable of measuring high NA light in a projection exposure apparatus with high accuracy without using a sealing liquid.

  In order to solve the above-described problems, the present invention provides an exposure apparatus that exposes an original pattern on a substrate, illuminating the original pattern and projecting the original pattern onto the substrate, and projection light that has passed through the projection optical system Measuring means for measuring the amount of light received, and the measuring means comprises a light guide member for guiding the image so that the image received on the incident surface and the image emitted on the exit surface are substantially the same or similar to each other. The projection light is received via

  Further, the same effect can be obtained even if the present invention is applied to a device manufacturing method for manufacturing a semiconductor device using the above exposure apparatus.

  As described above, according to the present invention, illuminance unevenness measurement and calibration measurement of high NA light in a projection exposure apparatus, particularly an immersion type projection exposure apparatus, can be performed with high accuracy without using a sealing liquid. be able to.

  Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

The embodiment described below is an example as means for realizing the present invention, and should be appropriately modified or changed according to the configuration of the apparatus to which the present invention is applied and various conditions. Moreover, in the following description, the same code | symbol is attached | subjected and shown to the element same as the prior art example mentioned above.
[First Embodiment]
FIG. 1 is a schematic block diagram of an immersion type projection exposure apparatus according to the first embodiment of the present invention.

  In FIG. 1, 1 is a reticle, 2 is a wafer to which a photosensitive agent is applied, and a circuit pattern on the reticle 1 is exposed and transferred. 3 is a modified illumination formation for projecting the circuit pattern on the reticle 1 onto the wafer 2. Illumination optical system including an apparatus, a light control device, and the like, 4 is a projection optical system for projecting a circuit pattern on the reticle 1 onto the wafer 2, and 5 is a reticle stage for holding the reticle 1 and positioning it at a predetermined position. , 16 is a reticle stage laser interferometer, 14 is mounted on the reticle stage 5 and reflects a laser beam irradiated from the reticle stage laser interferometer 16 to measure the reticle stage position, and 18 is a reticle. A driving motor 6 for driving the stage 5 positions the reticle 1, and the reticle pattern image has already been transferred onto the wafer 2. An alignment optical system for meeting the circuit pattern are.

  In the optical element (projection lens) 7 on the end surface of the projection optical system 4 facing the exposure surface of the wafer 2, the lens surface facing the surface of the wafer 2 is configured to be flat or convex toward the surface of the wafer 2. . This is to prevent an air layer or bubbles from remaining on the surface of the optical element 7 during immersion. Further, it is desirable that the surface of the optical element 7 to be in an immersion state and the surface of the photosensitive agent on the wafer 2 are coated with an immersion liquid 25. Reference numeral 12 denotes a liquid supply device for supplying the immersion liquid 25 between the optical element 7 and the wafer 2 surface, and 11 denotes a liquid recovery apparatus for recovering the immersion liquid 25. The liquid supply device 12 and the liquid recovery device 11 project at least a part of the working distance between the exposure surface of the wafer 2 and the projection lens 7 facing the exposure surface, or the light incident surface of the light amount sensor 27 described later and the projection. At least a part of the working distance with the lens 7 is filled with the liquid.

  8 is a wafer chuck for holding the wafer 2, 10 is a wafer stage for moving the wafer 2 in the XY directions and positioning it at a predetermined position, 17 is a drive motor for driving the wafer stage 10, and 9 is The fine movement stage is arranged on the wafer stage 10 and has a function of correcting the position of the wafer 2 in the θ direction, a function of adjusting the position of the wafer 2 in the Z direction, and a tilt function for correcting the tilt of the wafer 2. Reference numeral 15 denotes a laser interferometer for the wafer stage, and reference numeral 13 denotes a laser interferometer for the wafer stage which is attached to the fine movement stage 9 in the X and Y directions (Y direction is not shown). Reference mirrors 19 and 20 that reflect the diffused light emitted from 15 are focus measurement devices that measure the position of the wafer 2 in the Z direction and the tilt of the wafer 2. A controller 26 controls a wafer stage, a reticle stage, a focus measuring device, and the like.

The light amount sensor 27 is used to measure the amount of exposure light, and includes a sealing window 21, a sensor container 22, a light receiving element 23, a light transmission member 24, and a light shielding member 28. The light quantity sensor 27 may be disposed on the wafer chuck 8 or on the fine movement stage 9. A pinhole pattern 28a shown in FIG. 3 is formed on the light shielding member 28, and is used for measuring the absolute illuminance and the illuminance unevenness of the exposure light. Further, by changing the pattern shape through which the light on the surface of the light quantity sensor passes, it can be used for alignment and calibration purposes.
<Operation of exposure apparatus>
Next, the operation, action and effect of the exposure apparatus will be described.

  At the time of measuring the illuminance of the exposure light, the light amount sensor 27 is moved to the center of the projection optical system 4 by driving the wafer stage 10. Next, exposure is performed while supplying the immersion liquid 25 to the working distance (immersion area) between the optical element 7 and the light quantity sensor 27 by the liquid supply device 12, and the illuminance of the exposure light at that time is measured. The immersion liquid 25 supplied from the liquid supply device 12 is recovered by the liquid recovery device 20. As described above, since the sealing window 21 and the light transmission member 24 are provided in the light amount sensor 27, all light can reach the light receiving element 23 even with high NA exposure light, and highly accurate measurement is possible. Is possible.

  Next, a normal exposure operation will be described with reference to FIG.

At the time of exposure, first, the wafer 2 previously coated with a photosensitive agent is set on the wafer chuck 8 by a wafer transfer device (not shown). The wafer 2 placed on the wafer chuck 8 is fixed by vacuum suction and the flatness is corrected. Next, focus and tilt measurement is performed on the entire surface of the wafer 2 by the focus measuring devices 19 and 20. Next, exposure is performed while supplying the immersion liquid 25 between the optical element 7 and the wafer 2 by the liquid supply device 12 while controlling the position of the fine movement stage 9 according to the focus and tilt measurement information. Is recovered by the liquid recovery device 20. When the exposure of the wafer 2 is completed, the wafer 2 is collected from the wafer chuck 8 by a wafer transfer device (not shown), and a series of exposure operations is completed.
<Configuration of light sensor>
Next, details of the light quantity sensor 27 will be described with reference to FIG.

  The light quantity sensor 27 includes a sealing window 21, a sensor container 22, a light receiving element 23, and a light transmission member 24, on which a light shielding member 28 having a pinhole pattern 28a as shown in FIG. . The sealing window 21 is disposed in front of the light receiving element 23 that receives projection light, and the light transmission member 24 is disposed between the sealing window 21 and the light receiving element 23. Further, the light shielding member 28 is provided on the light incident surface side of the sealing window 21.

  As a material of the sealing window 21, a material that efficiently transmits exposure light such as quartz is selected. The light transmission member 24 can receive light at a full angle or a wide angle of a predetermined angle or more (NA of the projection lens or more), and guides the light so that the image received on the incident surface and the image emitted on the output surface are substantially the same or similar. In addition, a fiber optic plate (FOP; registered trademark) having a small light and image distortion and high transmission efficiency can be used. FOP (Fiber Optic Plate) is an optical device that bundles optical fibers of several microns, and transmits light and images (image) with high efficiency and low distortion as an optical element instead of a lens. Since it is not necessary to provide a focal length, a compact optical design is possible. When the transmittance of the fiber optic plate is small with respect to the exposure light, a phosphor screen may be formed on the surface of the fiber optic plate. The light shielding member 28 having the pinhole pattern 28 a is manufactured by punching a thin plate, and is attached in the vicinity of the surface of the sealing window 21.

  In addition, a sensor used for alignment measurement and calibration measurement, so-called reference mark, can be obtained by replacing the pinhole pattern 28a shown in FIG. 3 with a pattern 28b having a plurality of bars arranged as shown in FIG. It is possible. Of course, when used for other purposes, it can be handled by changing to a pattern shape suitable for that purpose.

According to the above configuration, the light transmitting member is formed of an optical element that transmits light incident from the sealing window to one side of the light or image on the opposite side, and is capable of wide-angle light reception and low distortion and high-efficiency light transmission. It can guide to a light receiving element via. In particular, since the material of the light transmission member is made of quartz or the like, total reflection does not occur at the boundary surface between the sealing window and the light transmission member, and incident light can reach the surface of the light receiving element. In addition, there is an advantage that there are few severe restrictions on the characteristics like the sealing liquid and the coating member.
[Second Embodiment]
FIG. 5 is a configuration diagram of a light amount sensor according to the second embodiment of the present invention. The configuration and operation of the entire exposure apparatus other than the light quantity sensor are the same as those in the first embodiment.

  In the light quantity sensor shown in FIG. 5, the light shielding member 28 having a pinhole-shaped pattern is sealed in a sealing window 21 formed on the surface with chromium or the like, the sensor container 22, the light receiving element 23, and the inertness filled in the sensor container 22. The liquid 31 and the light transmission member 24 are provided. The sealing window 21 is disposed in front of the light receiving element 23 that receives projection light, and the light transmission member 24 is disposed between the sealing window 21 and the light receiving element 23. Further, the light shielding member 28 is provided on the light incident surface side of the sealing window 21. The inert liquid 31 is sealed between the sealing window 21 and the light transmission member 24.

  The light transmission member 24 can receive full-angle or wide-angle light larger than a predetermined angle, and guides light so that the image received at the incident surface and the image emitted from the output surface are substantially the same or similar. Can be used, and a fiber optic plate (FOP) with high transmission efficiency can be used. When the transmittance of the fiber optic plate is small with respect to the exposure light, a phosphor screen may be formed on the surface of the fiber optic plate.

  The inert liquid 31 includes fluorine such as PFE (perfluoroether), PFPE (perfluoropolyether), HFE (hydrofluoroether), and HFPE (hydrofluoropolyether). System inert liquids can be used. As a guideline for these selections, the refractive index (> 1) is almost the same as that of the immersion liquid, the transmittance for exposure light is good, the deterioration due to exposure light is small, and the light receiving element 23 Therefore, it is important not to cause deterioration of characteristics.

By configuring the light amount sensor in such a manner, even when it is necessary to use the sealing liquid 31, it is possible to measure absolute illuminance and uneven illuminance of high NA light without using a coating member. Moreover, it is of course possible to change the pattern of the light shielding member 28 to a pattern shape suitable for various applications as shown in FIGS. 3 and 4 with respect to the light quantity sensor of FIG.
[Third Embodiment]
FIG. 6 is a configuration diagram of a light amount sensor according to the third embodiment of the present invention. Also here, the configuration and operation of the entire exposure apparatus other than the light quantity sensor are the same as those in the first embodiment.

  The light quantity sensor shown in FIG. 6 has a configuration without the sealing window 21, and includes a sensor container 22, a light receiving element 23, and a light transmission member 24. The light transmission member 24 is disposed in front of the light receiving element 23. The light transmission member 24 can receive full-angle or wide-angle light larger than a predetermined angle, and guides light so that the image received at the incident surface and the image emitted from the output surface are substantially the same or similar. Can be used, and a fiber optic plate (FOP) with high transmission efficiency can be used. When the transmittance of the fiber optic plate is small with respect to the exposure light, a phosphor screen may be formed on the surface of the fiber optic plate.

  By configuring the light amount sensor in this way, even when the amount of light reaching the light receiving element 23 is small in the configuration of the first embodiment, it is possible to measure the absolute illuminance and uneven illuminance of the exposure light. When the light receiving element 23 is saturated with a large amount of light, a light shielding member 28 having a pinhole pattern is formed on the fiber optic plate surface with chromium or the like to measure the absolute illuminance or illuminance unevenness of exposure light. It may be used.

Similarly to the second embodiment, it is of course possible to change the pattern of the light shielding member 28 to a pattern shape suitable for various applications as shown in FIGS. 3 and 4 with respect to the light quantity sensor of FIG. .
[Fourth Embodiment]
FIG. 7 is a configuration diagram of a light amount sensor according to the fourth embodiment of the present invention. Also here, the configuration and operation of the entire exposure apparatus other than the light quantity sensor are the same as those in the first embodiment.

  The light quantity sensor shown in FIG. 7 is a light transmission member having a lens function based on the configuration of FIG. 6, and includes a sensor container 22, a light receiving element 23, and a light transmission member 30 processed into an arbitrary shape. The light transmission member 30 processed into an arbitrary shape can receive full-angle or wide-angle light larger than a predetermined angle, and guides the light received on the incident surface and the image emitted on the output surface so that they are substantially the same or similar. It is possible to use a fiber optic plate (FOP) with small distortion of light and image and high transmission efficiency. Further, for example, by forming the fiber optic plate 30 in a tapered shape so as to converge toward the light receiving element 23 as shown in FIG. 7, the pattern image can be enlarged or reduced at the front stage and the rear stage of the fiber optic plate 30. This has the advantage that it is not necessary to use a lens when configuring the light quantity sensor.

  In addition, by making the fiber optic plate 30 long and bent in the middle, it is possible to guide light to the light receiving elements located at remote positions for reasons such as ease of arrangement. Of course, the fiber optic plate is not limited to the shape shown in the figure, and can be appropriately changed to a shape according to the application.

  Further, when the transmittance of the fiber optic plate is small with respect to the exposure light, a phosphor screen may be formed on the surface of the fiber optic plate. Further, a light blocking member 28 having a pinhole pattern may be formed on the surface of the fiber optic plate with chromium or the like, and used for measurement of absolute illuminance or uneven illuminance of exposure light. Further, as described in the first embodiment, a sealing window in which the pinhole-shaped light shielding member 28 is formed on the surface with chromium or the like may be used. At that time, as shown in the second embodiment, the sensor container may be filled with an inert liquid.

Further, as in the second and third embodiments, the pattern of the light shielding member 28 is changed to a pattern shape suitable for various applications as shown in FIGS. 3 and 4 with respect to the light quantity sensor of FIG. Is possible.
[Fifth Embodiment]
FIG. 9 is a schematic block diagram of a non-immersion projection exposure apparatus according to the fifth embodiment of the present invention.

  The exposure apparatus of this embodiment is the same as that of the first embodiment except that the liquid supply / recovery apparatuses 11 and 12 are not provided.

  The details of the configuration and operation of the light quantity sensor 27 are as described in the first to fourth embodiments, and the sensor of any of the embodiments can be used.

  As described above, the light quantity sensor of the present embodiment is not limited to an immersion projection exposure apparatus, but can be applied to a projection exposure apparatus that is not a conventional immersion type, other processing apparatuses, measurement apparatuses, and the like.

  In each of the embodiments described above, the light shielding member 28 on the sealing window 21 may be changed to a pattern shape suitable for various measurement applications or may be deleted depending on circumstances. Of course, the sealing window 21 may be a plate-shaped member such as a reference mark or quartz. Further, the light transmission members 24 and 30 are not limited to the fiber optic plate (FOP), and other optical elements having the same performance may be used.

In each of the above embodiments, the type of the light receiving element is not particularly limited, and may be a photodiode or a one-dimensional or two-dimensional CCD.
[Device manufacturing method]
Next, a semiconductor device manufacturing process using this exposure apparatus will be described. FIG. 13 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step S1 (circuit design), a semiconductor device circuit is designed. In step S2 (mask fabrication), a mask is fabricated based on the designed circuit pattern.

  On the other hand, in step S3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step S4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer using the above-described mask and wafer using the above-described exposure apparatus by utilizing lithography technology. The next step S5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step S5. The assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step S6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step S5 are performed. A semiconductor device is completed through these steps, and is shipped in step S7.

  The wafer process in step S4 includes the following steps (FIG. 14). An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer A resist processing step, an exposure step for transferring the circuit pattern to the wafer after the resist processing step by the above exposure apparatus, a development step for developing the wafer exposed in the exposure step, and an etching step for scraping off portions other than the resist image developed in the development step A resist stripping step that removes the resist that has become unnecessary after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a figure which shows the structure of the immersion type projection exposure apparatus of 1st Embodiment which concerns on this invention. It is a block diagram of the light quantity sensor applied to the exposure apparatus of FIG. It is a figure which shows the pinhole-shaped pattern applied to the light quantity sensor of FIG. It is a figure which shows the some bar-shaped pattern applied to the light quantity sensor of FIG. It is a block diagram of the light quantity sensor of 2nd Embodiment which concerns on this invention. It is a block diagram of the light quantity sensor of 3rd Embodiment which concerns on this invention. It is a block diagram of the light quantity sensor of 4th Embodiment which concerns on this invention. It is a block diagram of the conventional light quantity sensor. It is a figure which shows the structure of the projection exposure apparatus which is not a liquid immersion type of 5th Embodiment which concerns on this invention. It is a figure which shows the state at the time of exposure operation | movement of the immersion type projection exposure apparatus of embodiment which concerns on this invention. It is a side view which shows the structure of the conventional light quantity sensor. It is a figure explaining the effect of immersion. It is a figure which shows a device manufacturing method. It is a figure which shows a wafer process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reticle 2 Wafer 3 Illumination optical system 4 Projection optical system 5 Reticle stage 6 Alignment optical system 7 Projection lens 8 Wafer chuck 9 Fine movement stage 10 Wafer stage 11 Liquid recovery apparatus 12 Liquid supply apparatuses 13 and 14 Reference mirror 15 Laser interference for wafer stage Total 16 Reticle stage laser interferometer 17 Wafer stage drive motor 18 Reticle stage drive motor 19, 20 Focus measurement device 21 Sealing window 22 Sensor container 23 Light receiving element 24, 30 Fiber optic plate (FOP)
25 Immersion liquid 26 Controller 27 Light quantity sensor 28 Light shielding member 29 Coating member 31 Inactive liquid

Claims (11)

An exposure apparatus for exposing an original pattern to a substrate,
A projection optical system that illuminates the original pattern and projects it onto a substrate;
Measuring means for receiving the projection light that has passed through the projection optical system and measuring the amount of light; and
An exposure apparatus characterized in that the measuring means receives the projection light through a light guide member that guides an image received on an incident surface and an image emitted on an output surface to be substantially the same or similar to each other. .   At least part of the gap between the exposure surface of the substrate and the end surface of the projection optical system facing the exposure surface, or the gap between the surface of the measuring means and the end surface of the projection optical system. 2. The exposure apparatus according to claim 1, further comprising liquid supply means for filling at least a part of the liquid with the liquid. The measuring means includes a light receiving element that receives the projection light, and a light transmissive member that is disposed in front of the light receiving element and seals a container that houses the light receiving element,
The exposure apparatus according to claim 1, wherein the light guide member is disposed between the light receiving element and the light transmission member.   4. The exposure apparatus according to claim 3, wherein an inert liquid having substantially the same refractive index as the liquid supplied from the liquid supply means is further sealed in the container.   4. The exposure according to claim 3, wherein a light-shielding member having a predetermined pattern for allowing the projection light to pass through is provided on a light incident surface of the light transmission member on which the projection light enters. apparatus.   The said measuring means is provided with the light receiving element which receives the said projection light, The said light guide member is arrange | positioned in the front | former stage of the said light receiving element, and seals the container which accommodates the said light receiving element. The exposure apparatus described.   The exposure apparatus according to claim 6, wherein a light-shielding member having a predetermined pattern for allowing the projection light to pass through is provided on a light incident surface of the projection light in the optical element. .   The exposure apparatus according to claim 1, wherein the light guide member has a lens function of enlarging or reducing the pattern image of the projection light.   The exposure apparatus according to claim 1, wherein a fluorescent screen is formed on a light incident surface of the light guide member on which the projection light is incident.   The exposure apparatus according to claim 1, wherein the light guide member is made of a fiber optic plate. A device manufacturing method, comprising: manufacturing a semiconductor device using the exposure apparatus according to claim 1.

Images