JP4610315B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a layout of a pixel portion having a light emitting element, an active matrix display device having the layout, and a manufacturing method thereof.

  A display device provided with a light-emitting element in a pixel portion uses a metal mask in order to make the light-emitting element red (R), green (G), and blue (B). For example, when the light emitting element is a low molecular material, red (R), green (G), and blue (B) are separately formed by a vapor deposition method using a metal mask to form a pixel portion capable of full color display.

  In a method for manufacturing a light-emitting element using a vapor deposition method, a vapor deposition mask (metal mask) used to classify the light-emitting elements of each color is used as a light-emitting part on which the light-emitting elements are vapor-deposited in order to increase the size and increase the definition. There is a method for manufacturing an organic light emitting device in which the ratio of the portion corresponding to the above and the width of the boundary portion of the light emitting element is 1: 0.5 or more (see Patent Document 1). In Patent Document 1, it is possible to realize a fine pattern pixel and to produce a full-color display without aligning the mask by slightly changing the pattern property of the metal mask and the vapor deposition operation. It is described that it is easy to make.

  Further, as described in FIG. 2 of Patent Document 1, the metal mask has openings formed in a stripe shape. As shown in FIG. 9A, the pixel portion 10 includes a plurality of pixels 12, and the pixels 12 include regions 11R, 11G, and 11B that form RGB elements. Further, as shown in FIG. 9B, the RGB formation regions 11R, 11G, and 11B are partitioned into rectangles by banks 13 formed of an insulator before being deposited, and regions of the same color are arranged in the column direction. Common vapor deposition can be performed. Since the row direction is partitioned by the bank 13 in this manner, the metal mask has a stripe-shaped (slit-shaped) opening that is long in the column direction.

JP 2000-68053 A

  In a display device having such a light emitting element, in order to increase the resolution, it is necessary to narrow the interval between the element formation regions, and the interval between the element formation regions restricts the display resolution. The distance between the openings of the metal mask used for forming the light emitting element in this element formation region is limited by strength and patterning accuracy, and it is difficult to reduce the distance between the openings of the mask.

  In order to increase the resolution, it is necessary to reduce the interval between the pixels, and thus it is necessary to reduce the interval between the semiconductor elements and the wirings. However, even when the interval between wirings and the like can be reduced, there are still restrictions for reducing the interval between the openings of the metal mask. Therefore, as described above, it is difficult to reduce the interval between the openings of the metal mask. Therefore, as the interval between the pixels is reduced, the ratio between the area of the pixel and the area of the opening, that is, the aperture ratio decreases. Comes up.

  As described above, even if the pattern accuracy for miniaturizing the semiconductor elements and wirings is improved, the interval between the openings of the metal mask cannot be reduced, so that a high-definition display device having a light-emitting element cannot be expected.

  In view of the above, an object of the present invention is to provide a layout of a pixel having a light-emitting element that achieves high definition by a new method and a display device having the layout.

  In view of the above problems, the present invention is characterized by a configuration of a pixel portion in which element formation regions of the same color are arranged obliquely and a plurality of pixels share the element formation region. Further, the display device having the pixel configuration is characterized.

  A specific pixel configuration of the present invention is such that a first color element formation region, a second color element formation region, and a third color element formation region are arranged obliquely, and three or more element formation regions are arranged in each pixel. It is characterized by sharing with. In addition, the present invention can provide a display device having the pixel configuration.

  In another pixel configuration of the present invention, a first color element formation region, a second color element formation region, and a third color element formation region are arranged obliquely, and three or more element formation regions are arranged in each pixel. Each pixel has the same color area of the first color, the same color area of the second color, and the same color area of the third color selected from different element formation areas. In addition, the present invention can provide a display device having the pixel configuration.

  Another pixel configuration of the present invention includes a first color element formation region, a second color element formation region adjacent to the first color element formation region, and a second color element formation region. A third color element formation region adjacent to the region and arranged in the same row, and the first color element formation region, the second color element formation region, and the third color element formation region are arranged obliquely And each pixel has a first color same color region, a second color same color region selected from a first color element formation region, a second color element formation region, and a third color element formation region, and It has the same color area of the third color. In addition, the present invention can provide a display device having the pixel configuration.

  Another pixel configuration of the present invention includes a first color element formation region, a second color element formation region adjacent to the first color element formation region, and a second color element formation region. A third color element formation region adjacent to the region and provided in the same column, the first color element formation region, the second color element formation region, and the third color element formation region in the row direction. Each pixel is arranged so as to be shifted by one pitch (one interval of the element formation region), and each pixel is selected from the element formation region of the first color, the element formation region of the second color, and the element formation region of the third color. In addition, the same color region of the first color, the same color region of the second color, and the same color region of the third color. In addition, the present invention can provide a display device having the pixel configuration.

  In the pixel configuration, each pixel has a non-light emitting region.

  More specifically, each pixel has the same color area of the first color, the same color area of the second color, and the same color area of the third color arranged in an L shape. Alternatively, each pixel is arranged in an L shape so that the same color area of the second color is arranged in the row direction and the same color area of the third color is arranged in the column direction with respect to the same color area of the first color. Have the same color area.

  With the pixel structure as described above, high definition of a display device, for example, a display device having a light emitting element (hereinafter referred to as a light emitting device) can be achieved. Further, the aperture ratio of the pixel is not lowered.

  Another pixel configuration of the present invention includes a first color element formation region, a second color element formation region adjacent to and adjacent to the first color element formation region, and a second color element formation. A third color element formation region adjacent to the region and provided in the same row, and the first color element formation region, the second color element formation region, and the third color element formation region are arranged in the column direction. Each pixel is arranged so as to be shifted by 1.5 pitches (1.5 intervals of the element formation region), and each pixel has a first color element formation region, a second color element formation region, and a third color element formation region. The same color region of the first color selected from the above, the same color region of the second color, and the same color region of the third color. In addition, the present invention can provide a display device having the pixel configuration.

  Specifically, each pixel has the same color area of the first color, the same color area of the second color, and the same color area of the third color arranged in a T-shape. Alternatively, each pixel has the same color area of the second color and the third color arranged in the row direction with respect to the same color area of the first color, and the same color area of the second color and the third color is the same color of the first color. They are arranged in a T shape so as to be shifted by 0.5 intervals of the same color region in the column direction with respect to the region. Alternatively, each pixel is arranged in a triangular shape having one of the same color area of the first color, the same color area of the second color, and the same color area of the third color as a vertex.

  With the pixel structure as described above, high definition of the light emitting device can be achieved. Further, the aperture ratio is not lowered. In addition, since the pixel configuration does not have a non-light emitting region, the element formation region can be used effectively.

  In another pixel configuration of the present invention, the element formation region of the first color, the element formation region of the second color, and the element formation region of the third color are arranged obliquely, and the element formation region is composed of three or more pixels. Each of the pixels is a display device having the same color area of the first color, the same color area of the second color, and the same color area of the third color selected from different element formation areas, and is provided between adjacent same color areas. The width of the first insulating film is narrower than the width of the second insulating film provided between adjacent element formation regions. In addition, the present invention can provide a display device having the pixel configuration.

  Specifically, in the pixel portion, the width of the first insulating film provided between the same color regions adjacent in the column direction is narrower than the width of the second insulating film provided between the adjacent element formation regions. Alternatively, the width of the first insulating film provided between the same color regions adjacent in the row direction is narrower than the width of the second insulating film provided between adjacent element formation regions.

  Note that the pixel structure of the present invention is not limited to the above structure, and may be a pixel structure in which each pixel is configured by selecting the same color region from diagonally arranged element formation regions. As a result, high definition of the light emitting device can be achieved without reducing the aperture ratio.

  Note that in the present invention, it is not necessary for all the pixels in the pixel portion to satisfy the arrangement of the colors, and any arbitrary pixel may be satisfied. This certain arbitrary pixel may be expressed as one pixel.

  The display device manufacturing method of the present invention includes a first color element formation region, a second color element formation region adjacent to the first color element formation region, and the second color element formation region. A third color element formation region adjacent to the formation region and provided in the same row, and the first color element formation region, the second color element formation region, and the third color element formation region each pixel The element formation region is formed obliquely so as to be shared between the first color element formation region, the second color element formation region, and the third color element formation region. It is characterized by having the same color area of the color, the same color area of the second color, and the same color area of the third color.

  In another method for manufacturing a display device of the present invention, a first color element formation region, a second color element formation region adjacent to and adjacent to the first color element formation region, and a second color And the third color element formation region provided in the same row, the first color element formation region, the second color element formation region, and the third color element formation region are Each pixel is shifted by one pitch in the row direction (one interval of the element formation region), and the first color element formation region, the second color element formation region, and the third color element formation region are shared by each pixel. Forming an element forming region diagonally, and each pixel having the same color region of the first color selected from the element forming region of the first color, the element forming region of the second color, and the element forming region of the third color; The same color area of the second color and the same color area of the third color are formed to be arranged.

  According to another method for manufacturing a display device of the present invention, a first color element formation region, a second color element formation region adjacent to the first color element formation region and provided in the same row, and a second color And a third color element formation region provided in the same row as the first color element formation region, the second color element formation region, and the third color element formation region. Each pixel is formed so as to be shifted by 1.5 pitches in the column direction (1.5 intervals of the element formation region), and each pixel is formed of the first color element formation region, the second color element formation region, and the third color It is formed so as to have the same color area of the first color selected from the element formation areas, the same color area of the second color, and the same color area of the third color.

  In another method for manufacturing a display device of the present invention, an element formation region having the same color region arranged obliquely and an element formation region are shared by three or more pixels, and each pixel is selected from different element formation regions. A method for manufacturing a display device having the same color region of the first color, the same color region of the second color, and the same color region of the third color, wherein the width of the first insulating film provided between adjacent same color regions is Further, the second insulating film is formed so as to be narrower than the width of the second insulating film provided between adjacent element formation regions.

  For example, the first color can be red (R), the second color can be green (G), and the third color can be blue (B). However, the present invention is not limited to this combination.

  In the present invention, in order to form element forming regions of the same color arranged obliquely, the opening of the metal mask is provided obliquely. A mask having openings provided in an oblique arrangement can be used in common when forming each color element. Since an element formation region having a plurality of the same color regions is provided, it is preferable that the opening of the metal mask does not need to be miniaturized.

  With the pixel structure in which the element formation region and the same color region of the present invention are arranged so as to be L-shaped or T-shaped, the interval between the element formation regions (hereinafter referred to as element pitch) is not reduced. A display device with high definition can be formed. In other words, a display device with high definition can be formed without narrowing the opening of the metal mask. As a result, high definition of the display device can be achieved without reducing the aperture ratio.

  In the metal mask of the present invention, since an element formation region can be provided widely, the opening is not required to be miniaturized, which is preferable.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

  Although a transistor has three terminals of a gate, a source, and a drain, the source terminal (source electrode) and the drain terminal (drain electrode) cannot be clearly distinguished because of the structure of the transistor. Therefore, when describing connection between elements, one of a source electrode and a drain electrode is referred to as a first electrode, and the other is referred to as a second electrode.

(Embodiment 1)
FIG. 1A shows element formation regions 100R, 100G, and 100B and a bank 101 surrounded by dotted lines. Each element formation region is provided with four regions in which the same color elements partitioned by a bank made of an insulator or the like are formed (hereinafter, the region in which the same color elements are formed is referred to as the same color region. write). In such a pixel configuration, the interval between the banks provided between adjacent element formation regions corresponds to the width of the opening of the metal mask.

  As for the width of the bank, in the column direction (X direction), the width W1 of the bank in the same color region can be made smaller than the width W2 of the bank between adjacent element formation regions. Similarly, in the row direction (Y direction), the width W3 of the bank in the same color region can be made smaller than the width W4 of the bank between adjacent element formation regions. That is, the width of the bank can be narrowed in the same color region. This is because the bank width between adjacent element formation regions is affected by the deposition accuracy. On the other hand, the width of the bank in the same color area is affected by the exposure accuracy. In general, since the exposure accuracy is higher than the deposition accuracy, the width of the bank in the same color region can be narrower than the width of the bank between adjacent element formation regions. As a result, the aperture ratio does not decrease even when the interval between the pixels (hereinafter referred to as pixel pitch) is narrowed.

  FIG. 1B shows an arrangement of pixels formed by the element formation region. In FIG. 1B, a region surrounded by a dotted line corresponds to the pixel 102. The pixel has adjacent RGB same color areas, and further has a non-light emitting area 103. The non-light emitting area is an area in which any one of RGB same color areas is formed and may be non-light emitting when displaying.

  In the pixel structure shown in FIG. 1, it can be expressed that RGB element formation regions are arranged in an L shape, and that RGB same color regions are arranged in an L shape in a pixel. The L-shape indicates that the element formation regions of the second color are arranged in the row direction and the element formation regions of the third color are arranged in the column direction with respect to the element formation region of the first color. In a certain pixel, for the same color area of the first color, a second same color formation area is arranged in the row direction, and a third same color area is arranged in the column direction. For example, in the pixel 102, when viewing the same color region 105R of R, the same color region 105G of G is arranged in the column direction, and the same color region 105B of B is arranged in the row direction.

  With the pixel structure as described above, high definition of the light emitting device can be achieved. Furthermore, since the width of the bank in the same color region can be reduced, the aperture ratio can be increased.

  Next, FIG. 2 shows a pixel structure different from FIG. In FIG. 2A, element formation regions 100R, 100G, and 100B and a bank 101 surrounded by a dotted line are shown. Each element formation region is different from that shown in FIG. 1 in that six regions of the same color divided by a bank are provided.

  In the pixel configuration shown in FIG. 2, as in FIG. 1, the width W1 of the bank in the same color region can be made smaller than the width W2 of the bank between adjacent element formation regions in the column direction. In the row direction, the width W3 of the bank in the same color region can be made narrower than the width W4 of the bank between adjacent element formation regions. That is, the bank can be narrowed in the same color region. This is because the bank width between adjacent element formation regions is affected by the deposition accuracy. On the other hand, the width of the bank in the same color area is affected by the exposure accuracy. In general, since the exposure accuracy is higher than the deposition accuracy, the width of the bank in the same color region can be narrower than the width of the bank between adjacent element formation regions. As a result, the aperture ratio does not decrease even when the interval (pixel pitch) between the pixels is narrowed.

  FIG. 2B shows an arrangement of pixels formed by the element formation region. In FIG. 2B, a region surrounded by a dotted line corresponds to the pixel 102. In FIG. 2B, a pixel can be formed without providing a non-light emitting region. As a result, the element formation region can be used effectively, which is preferable. In the pixel 102, the same color region of RGB selected from each element formation region is different from the structure shown in FIG. 1 in a T shape (also referred to as a delta arrangement). The T-shape is expressed by using an arbitrary number n (n is an integer), and in the (n + 1) th row, the second color and the second color in the row direction with respect to the first color element formation region in the nth row. The third element formation regions are arranged adjacent to each other, and the element formation region in the n-th row and the element formation region in the (n + 1) -th row are 1.5 pitches in the column direction (element formation region interval × 1.5 minutes). That is, it means that the element formation regions are arranged with a gap of 1.5). Then, when viewed from a certain pixel, the second and third identical color regions adjacent to each other in the row direction are arranged in the n + 1th row with respect to the same color region of the first color constituting the one pixel in the nth row. And the second and third same-color regions are arranged so as to be shifted from the first same-color region by a half interval of the same-color region in the column direction (0.5 interval of the same-color region). . For example, in the same color region 105G of the pixel 102, the same color region 105B of R and the same color region 105B of R are arranged adjacent to each other in the row direction, and the same color of the same color region 105R and B of R are arranged one row below. The region 105B is arranged so as to be shifted from the G same color region 105G to the left and right in the column direction by a half interval of the same color region (0.5 interval of the same color region). In other words, the pixels are arranged in a triangular shape having the same color region of RGB as a vertex. Specifically, in the pixel 102, an R same color area 105R and a B same color area 105B are arranged with the G same color area 105G as a vertex. Looking at the pixel 102a adjacent to the pixel 102, the same color region of RGB is arranged in the same relationship, but it has a triangular shape with the same color region 105B of B as the apex, and the apex direction is the pixel 102, They are arranged in the reverse direction.

  With the pixel structure as described above, high definition of the light emitting device can be achieved. Further, the aperture ratio is not lowered, and in addition, since the non-light emitting region is not provided, the element formation region can be used effectively.

  In addition, with the pixel structure of the present invention, a display device with high definition can be formed without reducing the element pitch. In other words, a display device with high definition can be formed without narrowing the opening of the metal mask. As a result, high definition of the display device can be achieved without reducing the aperture ratio. That is, even when semiconductor elements and wirings provided in the pixel portion are miniaturized and the pixel pitch is narrowed, high definition of the display device can be achieved without decreasing the aperture ratio.

  As a means for forming elements in a pixel array having such a layout, a droplet discharge method which can selectively form a pattern can be used. In the droplet discharge method, a droplet (also referred to as a dot) of a composition in which a material such as a conductive film or an insulating film is mixed is selectively discharged (ejected). Depending on the method, the droplet discharge method is also called an inkjet method.

  Such a pixel structure arrangement can also be applied to a color filter included in a light-emitting device or a liquid crystal display device. In this case, a black matrix having a resin containing chromium or the like can be formed instead of the bank. By using a color filter, full color display can be performed without forming each RGB element. For example, a light-emitting device that performs full-color display can be manufactured by forming a light-emitting element that emits white light and providing a color filter arranged in the layout of the present invention.

  Further, even when each color element is formed in the light emitting device, display with higher accuracy can be performed by using a color filter. This is because the broad peak of the emission spectrum from each color element can be corrected so as to be sharp by the color filter.

(Embodiment 2)
In this embodiment, an active matrix layout will be described. Although this embodiment mode is described with a structure in which a switching transistor, an erasing transistor, and a driving transistor are provided in each pixel, the present invention is not limited to this.

  FIG. 3 shows an enlarged top view of the pixels having the same color region arranged in the L shape. The upper left region is the same color region 111R for R, the region adjacent to the same color region for R in the column direction is the same color region 111G for G, and the region adjacent to the same color region for R in the row direction is the same color region 111B for B. . The lower right region is a non-light-emitting region 112 in which any element of RGB is formed but is not used as a light-emitting region.

  In each same color region, driving transistors 116R, 116G, and 116B are provided, and a pixel electrode 123 is provided so as to be connected to one electrode of each driving transistor. Note that in FIG. 3, a part of the pixel electrode is not illustrated in order to clearly describe the driving transistor.

  The driving transistor preferably operates in a saturation region and controls a current flowing through the light emitting element. Therefore, the channel length (L) of the driving transistor is preferably designed to be longer than the channel width. In this embodiment mode, the semiconductor film of the driving transistor is formed to meander and is arranged so that the channel length becomes long. Further, the driving transistor may be operated in a linear region.

  The polarity of the driving transistor may be n-channel type or p-channel type. In this embodiment mode, the polarity of the driving transistor is a p-channel type.

  Each switching transistor 114R, 114G, 114B connected to the gate electrode of each driving transistor is provided, and signal lines 113R, 113G, 113B connected to one electrode of each switching transistor are provided. Yes. In accordance with each video signal input from the signal line, current is supplied to the light emitting element to perform display. Therefore, a signal line is provided for each switching transistor.

  Specifically, when the switching transistor is turned on, charge is accumulated in the capacitor. When the charge reaches the Vgs value of the driving transistor, the driving transistor is turned on, and current is supplied to the light emitting element. In FIG. 3, the capacitor is not provided, but when the gate capacitance of the transistor is sufficient, it is not necessary to provide the capacitor.

  The switching transistor has a double gate structure having two gate electrodes with respect to the semiconductor film, and the conductive film functioning as the gate electrode can be shared by the switching transistors. Note that each gate electrode can be formed using the same conductive film as the first scan line 121.

  Further, erasing transistors 115R, 115G, and 115B connected to the gate electrode of each driving transistor and one electrode of each switching transistor are provided, respectively, and one electrode of each erasing transistor 115R, 115G, and 115B is provided. A power line 120 connected in common is provided. The erasing transistor may be connected so as to discharge the charge accumulated in the capacitor, and is not limited to the structure in FIG.

  The switching transistor has a double gate structure having two gate electrodes with respect to the semiconductor film, and the conductive film functioning as the gate electrode can be shared by the switching transistors. Note that each gate electrode can be formed using the same conductive film as the second scan line 122. Further, the first scan line and the second scan line can be formed from the same conductive film.

  The polarity of the switching transistor and the erasing transistor may be n-channel type or p-channel type. However, since the same polarity is preferable in the manufacturing process, both of them are used in this embodiment mode. The transistor is formed as an n-channel thin film transistor (TFT).

  Each switching transistor and each erasing transistor are provided in the non-light emitting region 112. As a result, it is possible to prevent the aperture ratio from being lowered in the same color region. Each switching transistor and each erasing transistor may be formed in each same color region.

  An enhancement type or depletion type thin film transistor can be used as the transistor having each function. The transistor having each function can be formed using a thin film transistor including a semiconductor.

  As a semiconductor material, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%. As the semiconductor, an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed (also referred to as SAS), and crystal grains of 0.5 nm to 20 nm can be observed in the amorphous semiconductor. It may have any state selected from a microcrystalline semiconductor and a crystalline semiconductor. In particular, a microcrystalline state in which grains of 0.5 nm to 20 nm can be observed is called a so-called microcrystal (μc). In this embodiment mode, a thin film transistor having a top gate structure is described; however, a thin film transistor having a bottom gate structure may be used. In particular, when an amorphous semiconductor, a semi-amorphous semiconductor, or a microcrystalline semiconductor is used, a bottom gate structure is preferably used.

  A conductive film such as a gate electrode or a scan line used for the thin film transistor can be formed by a sputtering method or a droplet discharge method. Furthermore, conductive films such as a source electrode, a drain electrode, a signal line, and a power supply line can also be formed by a sputtering method or a droplet discharge method. In the case of forming by a sputtering method, the conductive film material can be formed of an element selected from tantalum, tungsten, titanium, molybdenum, aluminum, and copper, or an alloy material or a compound material containing the element as a main component. When the conductive film material is formed by a droplet discharge method, the conductive film material can be formed from an element selected from gold, silver, and copper, or an alloy material or a compound material containing the element as a main component.

The pixel electrode is made of light-transmitting material such as indium tin oxide (ITO), indium oxide mixed with 2-20% zinc oxide (ZnO), indium zinc oxide, indium oxide. ITO-SiOx (denoted as ITSO or NITO for convenience), organic indium, organic tin, etc. mixed with ₂ to 20% silicon oxide (SiO ₂ ) can be used. In addition to silver (Ag), an element selected from tantalum, tungsten, titanium, molybdenum, aluminum, and copper, or an alloy material or a compound material containing the element as a main component is used as the non-translucent material. it can.

  A structure in which light is emitted from the pixel electrode side having translucency and emitted from the substrate side where the thin film transistor is provided is a downward emission type, a structure in which the light is emitted from the counter substrate side is an upward emission type, and a structure in which the light is emitted from both substrate sides Any structure of a dual emission type can be adopted.

  Although not shown in FIG. 3, a bank is provided, and the width of the bank is similarly narrower in the row direction in the same color region than the bank between adjacent element formation regions in the row direction. can do.

  With the pixel structure as described above, full color display with high definition can be performed.

  With the pixel structure as in this embodiment mode, a display device with high definition can be formed without narrowing the element pitch. In other words, since it is not necessary to reduce the interval between the element formation regions, a display device with high definition can be formed without reducing the width of the opening of the metal mask. As a result, high definition of the display device can be achieved without reducing the aperture ratio. In other words, semiconductor elements and wirings provided in the pixel portion can be miniaturized, the pixel pitch can be narrowed, and even when it is difficult to improve the deposition accuracy, the display device can be highly refined without reducing the aperture ratio. Can be achieved.

  As described above, the means for forming elements in the pixel array having the layout as described above can use a droplet discharge method which is a method capable of selectively forming a pattern.

  As described above, such a pixel structure arrangement can be applied to a color filter included in a light-emitting device or a liquid crystal display device.

(Embodiment 3)
In this embodiment mode, a layout of an active matrix different from that in the above embodiment mode will be described. Although this embodiment mode is described with a structure in which a switching transistor, an erasing transistor, and a driving transistor are provided in each pixel, the present invention is not limited to this.

  FIG. 4 shows an enlarged top view of pixels having the same color region arranged in a T shape shown in the above embodiment. In FIG. 4, the upper left region (arbitrary number n (where n is an integer) represents the nth row) is the same color region 111R for R, and the region adjacent to the same color region for R in the column direction is the same color region 111G for G. 3 is different from the structure shown in FIG. 3 in that an area disposed in the column direction by an interval of 0.5 interval of the same color area and below the R color area (n + 1 line) is the B color area 111B. In other words, in each pixel, the same color area 111B of B and the same color area 111R of B and the same color area 111G of B are arranged in a triangular shape.

  In the pixel shown in FIG. 4, unlike the above embodiment, a non-light emitting region is not formed. As a result, the element formation region, that is, the light emitting region can be used effectively, which is preferable.

  Similarly to the above embodiment, driving transistors 116R, 116G, and 116B are provided in the same color regions, and pixel electrodes 123 are provided so as to be connected to one electrode of each driving transistor. . In FIG. 4 as well, a part of the pixel electrode is not shown for easy understanding of the driving transistor.

  Similarly to the above embodiment, switching transistors 114R, 114G, 114B connected to the gate electrodes of the driving transistors are provided, and signal lines 113R, 113G connected to one electrode of the switching transistors. , 113B are provided. In accordance with each video signal input from the signal line, current is supplied to the light emitting element to perform display. Therefore, a signal line is provided for each switching transistor. In this embodiment, since the same color regions are formed so as to be shifted by 0.5 intervals of the same color regions in the column direction, the signal lines are provided so as to be bent in a rectangular shape.

  Similarly to the above embodiment, erase transistors 115R, 115G, and 115B connected to the gate electrode of each driving transistor and one electrode of each switching transistor are provided, and the erase transistors 115R, 115G are provided. , 115B, power supply lines 120a and 120b connected in common to one electrode are provided. The power supply lines 120a and 120b are connected to one electrode of the erasing transistor in the odd-numbered column and the other electrode of the erasing transistor in the even-numbered column, respectively. The width of the power supply line is formed so as to be wider than the width of the signal line. This is because it is necessary to reduce the resistance of the power supply line because the driving transistor shares the power supply line. Similarly to the signal line, the power supply line is provided to be bent in a rectangular shape. The erasing transistor may be connected so as to discharge the charge accumulated in the capacitor, and is not limited to the structure in FIG.

  Further, as in the above embodiment, a first scanning line 121 and a second scanning line 122 are provided.

  FIG. 5 shows a layout when the power supply line is shared unlike FIG. Referring to FIG. 5, in a certain pixel, the same color region 111R of R and the same color region 111G of B and the same color region 111B of B are arranged in a triangular shape. Specifically, in FIG. 5, the upper region is provided with the same color region 111R for R, and the same color region 111G for G and the same color region 111B for B are provided adjacent to the same color region for R in the row direction. The same color region 111G for G and the same color region 111B for B are arranged so as to be shifted by 1.5 pitches in the column direction with respect to the same color region 111R.

  Similarly to the above embodiment and FIG. 4, the driving transistors 116R, 116G, and 116B, the pixel electrode 123 to be connected to one electrode of each driving transistor, and the switching transistors 114R, 114G, 114B, signal lines 113R, 113G, 113B connected to one electrode of each switching transistor, each erasing transistor 115R, 115G, 115B, and one electrode of each erasing transistor 115R, 115G, 115B Thus, a power supply line 120, a first scanning line 121, and a second scanning line 122 are provided. The signal line and the power supply line are provided so as to be bent in a rectangular shape.

  In FIG. 5, the power supply line 120 is different from the structure shown in FIG. 4 in that it is connected to one electrode of the erasing transistor in each column. By sharing the power supply line, a margin between the power supply lines can be reduced. Therefore, the width of the power supply line can be increased. The width of the power supply line is formed so as to be wider than the width of the signal line. This is because each driving transistor shares a power supply line, and thus it is necessary to reduce the resistance of the power supply line.

  Thus, the pixels having the same color region arranged in a T-shape can take various layouts.

  Also in this embodiment, any structure of a bottom emission type, a top emission type, and a dual emission type can be adopted.

  Although not shown in FIGS. 4 and 5, a bank is provided. Similarly, in the row direction, the width of the bank in the same color region can be made narrower than the width of the bank between adjacent element formation regions.

  With the pixel structure as in this embodiment mode, a display device with high definition can be formed without narrowing the element pitch. In other words, since it is not necessary to reduce the interval between the element formation regions, a display device with high definition can be formed without reducing the width of the opening of the metal mask. As a result, high definition of the display device can be achieved without reducing the aperture ratio. In other words, semiconductor elements and wirings provided in the pixel portion can be miniaturized, the pixel pitch can be narrowed, and even when it is difficult to improve the deposition accuracy, the display device can be highly refined without reducing the aperture ratio. Can be achieved. In addition, since the non-light emitting region is not provided, the element forming region can be used effectively.

  As described above, the means for forming elements in the pixel array having the layout as described above can use a droplet discharge method which is a method capable of selectively forming a pattern.

  As described above, such a pixel structure arrangement can be applied to a color filter included in a light-emitting device or a liquid crystal display device.

(Embodiment 4)
In this embodiment mode, a pixel circuit of a light-emitting device and an operation thereof are described.

  In the pixel circuit illustrated in FIG. 6A, a signal line 410 and power supply lines 411 and 412 are arranged in the column direction, and a scanning line 414 is arranged in the row direction. In addition to the switching transistor 401, the driving transistor 403, the capacitor 402, and the light emitting element 405, a current control transistor 404 is provided.

  The pixel shown in FIG. 6C is different from the pixel shown in FIG. 6A except that the gate electrode of the driving transistor 403 is connected to the power supply line 412 arranged in the row direction. It is the same structure. That is, both pixels shown in FIGS. 6A and 6C show the same equivalent circuit diagram. However, in the case where the power supply line 412 is arranged in the row direction (FIG. 6A) and in the case where the power supply line 412 is arranged in the column direction (FIG. 6C), each power supply line has a different layer. It is formed of a conductive film. Here, attention is paid to a wiring to which the gate electrode of the driving transistor 403 is connected, and FIGS. 6A and 6C are separately illustrated in order to indicate that layers for manufacturing these are different.

  As a feature of the pixel circuit shown in FIGS. 6A and 6C, in addition to the driving transistor 403, a current control transistor 404 is connected in series in the pixel. The channel length L (403) and channel width W (403) of the driving transistor 403 and the channel length L (404) and channel width W (404) of the current control transistor 404 are L (403) / W (403). : L (404) / W (404) = 5 to 6000: 1 may be satisfied.

  Note that the driving transistor 403 has a role of controlling a current value flowing through the light-emitting element 405 and preferably operates in a saturation region as described above. The current control transistor 404 has a role of controlling supply of current to the light emitting element 405, and is preferably operated in a linear region. In addition, since both transistors preferably have the same polarity in the manufacturing process, the polarity of both transistors is formed as an n-channel type in this embodiment mode. In addition to the enhancement type, a depletion type transistor may be used for the driving transistor 403 and the current control transistor 404. In the present invention having the above structure, since the current control transistor 404 operates in a linear region, a slight change in Vgs of the current control transistor 404 does not affect the current value of the light emitting element 405. That is, the current value of the light emitting element 405 can be determined by the driving transistor 403 operating in the saturation region. With the above structure, it is possible to provide a display device in which luminance unevenness of a light-emitting element due to variation in characteristics of each transistor is improved and image quality is improved.

  In the pixel circuits shown in FIGS. 6A to 6D, the switching transistor 401 controls input of a video signal to the pixel. When the switching transistor 401 is turned on, the video signal is input into the pixel. Is done. Then, the charge of the video signal is held in the capacitor 402. 6A and 6C illustrate the structure in which the capacitor 402 is provided, the capacitor 402 is not necessarily provided when the charge of the video signal can be held by a gate capacitance of a transistor or the like. .

  The pixel shown in FIG. 6B is the same as the pixel circuit shown in FIG. 6A except that an erasing transistor 406 and a scanning line 415 connected to the gate electrode of the erasing transistor are added. is there. Similarly, the pixel circuit illustrated in FIG. 6D has the pixel illustrated in FIG. 6C except that an erasing transistor 406 and a scanning line 415 connected to the gate electrode of the erasing transistor are added. Same as circuit.

  The erasing transistor 406 is controlled to be turned on or off by the scanning line 415. When the erasing transistor 406 is turned on, the charge held in the capacitor 402 is discharged, and the current control transistor 404 is turned off. In other words, the state in which no current flows through the light-emitting element 405 can be created by the arrangement of the erasing transistor 406. Therefore, as shown in FIGS. 6B and 6D, the pixel circuit having the erasing transistor starts the lighting period at the same time as or immediately after the start of the writing period without waiting for signal writing to all the pixels. Therefore, the duty ratio can be improved.

  In the pixel circuit illustrated in FIG. 6E, a signal line 410, a power supply line 411 are arranged in the column direction, and a scanning line 414 is arranged in the row direction. The pixel further includes a switching transistor 401, a driving transistor 403, a capacitor 402, and a light emitting element 405. The pixel circuit illustrated in FIG. 6F corresponds to the pixel circuit having the layout described in the above embodiment mode, and is illustrated in FIG. 6E except that an erasing transistor 406 and a scan line 415 are added. It is the same as the pixel circuit. Note that the duty ratio of the circuit in FIG. 6F can also be improved by the arrangement of the erasing transistor 406.

  In particular, when a thin film transistor including an amorphous semiconductor or the like is used, it is preferable to increase the channel length of the driving transistor. Therefore, in consideration of the aperture ratio, FIG. 6E or FIG. 6F is preferable because the number of transistors is small.

  Such an active matrix light-emitting device is provided with a transistor in each pixel, and thus can be driven at a low voltage even when the pixel density is increased. On the other hand, a passive matrix light-emitting device in which a transistor is provided for each column can be formed. A passive matrix light-emitting device has a high aperture ratio because a transistor is not provided for each pixel, and is suitable for a top-emission or dual-emission light-emitting device. In such a passive matrix light-emitting device, the layout of the above embodiment can be employed.

  As described above, various pixel circuits can be employed.

(Embodiment 5)
In this embodiment, a structure of a light-emitting device in which a signal line driver circuit, a scan line driver circuit, and a pixel portion are formed integrally will be described.

  7A illustrates a light-emitting device in which a signal line driver circuit 200, a scan line driver circuit 201, and a pixel portion 202 are provided over a first substrate 210, and a second substrate 204 is attached to a sealant 205. A top view is shown. In addition, a connection region 256 is provided between the signal line driver circuit and the pixel portion, and a signal from an external circuit is transmitted via a flexible printed circuit (FPC) 209 to the signal line driver circuit and the scan. Input to the line drive circuit.

  FIG. 7B is a cross-sectional view taken along the line AA ′ of the light-emitting device. A signal line driver circuit 200 including a CMOS circuit having an n-channel TFT 223 and a p-channel TFT 224 over the first substrate 210 is shown. Is provided. The n-channel TFT 223 and the p-channel TFT 224 can be formed using a polycrystalline semiconductor film formed by a laser crystallization method or a heating method using a metal catalyst. The TFT forming the signal line driver circuit 200 and the scanning line driver circuit 201 may be formed of a CMOS circuit, a PMOS circuit, or an NMOS circuit.

  In the case of using an amorphous semiconductor film, a driver circuit such as a signal line driver circuit or a scan line driver circuit can be mounted using an IC chip. Such a driving circuit is mounted by the TAB method and by the COG method around the pixel portion. In particular, when mounted by the TAB method, a large pixel portion can be provided with respect to the substrate, and a narrow frame can be achieved. In the case of using the SAS, only the scanning line driving circuit can be integrally formed on the substrate and the signal line driving circuit can be mounted as a separate driver.

  The IC chip is formed using a silicon wafer, but an IC (hereinafter referred to as a driver IC) in which an IC is formed on a glass substrate may be provided instead of the IC chip. Since an IC chip is taken out from a circular silicon wafer, the shape of the base substrate is limited. On the other hand, the driver IC can increase productivity because the base substrate is made of glass and the shape is not limited. Therefore, the shape and size of the driver IC can be set freely. For example, if the length of the long side of the driver IC is 15 to 80 mm, the required number can be reduced as compared with the case where the IC chip is mounted. As a result, the number of connection terminals can be reduced, and the manufacturing yield can be improved.

  The driver IC can be formed using a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiation with continuous wave laser light. A semiconductor film obtained by irradiating continuous wave laser light has few crystal defects and large crystal grains. As a result, a transistor having such a semiconductor film has favorable mobility and response speed, can be driven at high speed, and is suitable for a driver IC.

  The pixel portion 202 includes a switching TFT 221 and a driving TFT 212. The switching TFT 221 and the driving TFT 212 can be formed using a polycrystalline semiconductor film formed by a laser crystallization method or a heating method using a metal catalyst. Alternatively, an amorphous semiconductor film may be used. Note that the TFT in the pixel portion does not need to have high crystallinity as compared with the TFT included in the driver circuit, and thus the TFT may be separately formed in the pixel portion and the driver circuit portion.

  In addition, the pixel portion includes a light emitting element 218 connected to one electrode of the driving TFT 212. The light-emitting element 218 covers the first electrode (hereinafter referred to as the first electrode) 213 of the light-emitting element, the switching TFT 221 and the driving TFT 212, and has an opening at a position corresponding to the first electrode 213. It has an electroluminescent layer 215 separated by a bank 214 and a second electrode 216 of a light emitting element provided on the electroluminescent layer.

  The material of the electroluminescent layer can be used as an organic material (including a low molecule or a polymer) or a composite material of an organic material and an inorganic material. The electroluminescent layer can be formed by a vapor deposition method or a droplet discharge method. The polymer material is preferably a coating method such as a droplet discharge method, and the low molecular material is preferably an evaporation method, particularly a vacuum evaporation method. In this embodiment mode, a low molecular material is formed as an electroluminescent layer by a vacuum evaporation method using a metal mask as described above.

  Note that the type of molecular excitons formed by the electroluminescent layer can be a singlet excited state or a triplet excited state. The ground state is usually a singlet state, and light emission from the singlet excited state is called fluorescence. In addition, light emission from the triplet excited state is called phosphorescence. The light emission from the electroluminescent layer includes the case where either excited state contributes. Furthermore, fluorescence and phosphorescence may be used in combination, and either fluorescence or phosphorescence can be selected according to the emission characteristics of each RGB (emission luminance, lifetime, etc.).

  The detailed electroluminescent layer includes, in order from the first electrode 213 side, HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), and EIL (electron injection layer). They are stacked in order. Note that the electroluminescent layer can have a single-layer structure or a mixed structure in addition to the stacked structure.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML may be Alq ₃ doped with a dopant corresponding to each emission color of R, G, and B (DCM in the case of R, DMQD in the case of G).

  Note that the electroluminescent layer is not limited to the above materials. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property. A benzoxazole derivative (shown as BzOS) may be used for the electron injection layer.

  In this embodiment mode, a material that emits red (R), green (G), or blue (B) light can be formed as the electroluminescent layer 215 with the layout as shown in the above embodiment mode. In addition, a material that emits red (R), green (G), and blue (B) light may be formed by a droplet discharge method so as to have the layout described in the above embodiment mode.

  Furthermore, when each RGB electroluminescent layer is formed, high-definition display can be performed using a color filter. This is because the color filter can correct a broad peak in the emission spectrum of each RGB so as to be sharp. The RGB arrangement of the color filter can also be formed so as to have the same relationship as the layout shown in the above embodiment. Furthermore, each RGB of the color filter can be formed by a droplet discharge method.

    The insulator 214 includes an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), siloxane, polysilazane, And a stacked structure thereof can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used. Siloxane has a skeletal structure with a bond of silicon (Si) and oxygen (O), and the substituent contains at least hydrogen, or the substituent has at least one of fluorine, alkyl groups, and aromatic hydrocarbons. A polymeric material having a starting material. Polysilazane is formed using a polymer material having a bond of silicon (Si) and nitrogen (N), that is, a liquid material containing so-called polysilazane as a starting material. For example, in the case where positive photosensitive acrylic is used as the organic material, an opening having a curvature can be formed at the upper end when the photosensitive organic resin is etched by an exposure process. Therefore, disconnection of an electroluminescent layer or the like to be formed later can be prevented. In the case of using an organic resin film or the like, an insulating film containing silicon nitride or silicon nitride oxide as a main component or a DLC film (Diamond Like Carbon) containing hydrogen may be formed in order to prevent intrusion of moisture and oxygen.

  Depending on the electrode material of the first electrode 213 and the second electrode 216, either a top emission type, a bottom emission type, or a dual emission type can be selected. For example, when a light-transmitting conductive film is used for the first electrode and the second electrode, a dual emission light-emitting device can be manufactured. Note that light can be effectively used by using a highly reflective conductive film for the electrode of the light-emitting element provided on the side not corresponding to the light emission direction.

  Note that depending on the pixel structure, both the first electrode and the second electrode can be an anode or a cathode. For example, specific electrode materials will be described in the case where the first electrode is an anode and the second electrode is a cathode.

  As the anode material, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (work function 4.0 eV). Specific examples of the anode material include ITO (indium tin oxide), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, gold (Au), platinum (Pt), Nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or metal nitride (TiN), etc. Can be used.

On the other hand, as the cathode material, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (work function of 3.8 eV or less). Specific examples of the cathode material include elements belonging to Group 1 or Group 2 of the element periodic rule, that is, alkali metals such as Li and Cs, and alkaline earth metals such as Mg, Ca, and Sr, and alloys containing these (Mg : Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), as well as transition metals including rare earth metals. However, since the cathode needs to have translucency, these metals or an alloy containing these metals are formed very thinly, and are formed by lamination with a metal (including an alloy) such as ITO. These anode and cathode can be formed by vapor deposition, sputtering, or the like.

  The case where the RGB electroluminescent layers are formed has been described above, but an electroluminescent layer exhibiting monochromatic light emission may be formed. Even in the case of forming electroluminescence showing monochromatic emission, full color display can be performed by combining a color filter and a color conversion layer. Then, the layout of the color filter and the color conversion layer is formed in the arrangement as in the above embodiment. The color filter and the color conversion layer may be formed, for example, on the second substrate and attached to the substrate. The color filter may be formed on a first substrate by a so-called COA structure. In the case of performing a dual emission display in which light from the electroluminescent layer is emitted to the first substrate 210 side and the second substrate 204 side, a color filter may be provided on both substrates.

  Alternatively, a monochromatic display may be performed by forming an electroluminescent layer that emits monochromatic light. For example, an area color type display can be performed using monochromatic light emission. The area color type is suitable for a passive matrix structure and can mainly display characters and symbols.

  Further, in order to prevent deterioration of the light-emitting element due to moisture, oxygen, or the like, a protective film 217 is provided to cover the second electrode of the light-emitting element. In this embodiment mode, an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method) or a DLC film (Diamond Like Carbon) containing hydrogen is used for the protective film 217.

  As shown in FIG. 7, the second electrode 216 of the light emitting element is connected to the connection wiring 208 from the opening provided in the bank 214 in the connection region 256 through the wiring. The connection wiring 208 is connected to the FPC 209 by an anisotropic conductive resin (ACF). Then, a video signal and a clock signal that are external input signals are received via the FPC 209. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.

  In addition, a sealing material 205 is provided on a peripheral portion of the first substrate 210 and is bonded to the second substrate 204 and sealed. The sealing material 205 is preferably made of an epoxy resin. Spacers are mixed in the sealing material, and a gap, that is, a so-called gap between the first substrate 210 and the second substrate (also referred to as a counter substrate or a sealing substrate) 204 is maintained. A spacer having a spherical or columnar shape is used as the spacer, and in this embodiment, a cylindrical spacer is used, and the diameter of the circle becomes a gap. Further, a desiccant may be provided on the second substrate. The desiccant can prevent moisture and oxygen from entering.

  When sealed with the second substrate 204, a space is formed between the protective film 217 and the second substrate 204. The space is filled with an inert gas, for example, nitrogen gas, or a material with high water absorption is formed to prevent moisture and oxygen from entering. In this embodiment, a resin 230 having a light-transmitting property and high water absorption is formed. Since the resin 230 has a light-transmitting property, the resin 230 can be formed without reducing transmittance even when light from the electroluminescent layer is emitted to the second substrate side.

  In order to increase the contrast, the first substrate or the second substrate may include a polarizing plate or a circular polarizing plate in at least the pixel portion. For example, in the case where the display is recognized from the second substrate side, a ¼λ plate, a ½λ plate, and a polarizing plate may be provided in order from the second substrate 204. Further, an antireflection film may be provided on the polarizing plate.

  Such a light-emitting device can be installed in a housing of an electronic device and completed as a product. A heat sink or the like is preferably provided in the housing in order to prevent heat generation of the light emitting device.

(Embodiment 6)
In this embodiment mode, a structure of a liquid crystal display device including a color filter having the layout of the present invention will be described.

  In FIG. 8A, a liquid crystal display in which a signal line driver circuit 200, a scan line driver circuit 201, and a pixel portion 202 are provided over a first substrate 210 and a second substrate 204 is attached to each other with a sealant 205. A top view of the device is shown. A signal from an external circuit is input to the signal line driver circuit and the scan line driver circuit via the FPC 209.

  FIG. 8B is a cross-sectional view taken along the line AA ′ of the display device. Similarly to the light-emitting device, a signal including a CMOS circuit having an n-channel TFT 223 and a p-channel TFT 224 over the first substrate 210. A line driving circuit 200 is included. Each TFT can be formed using a polycrystalline semiconductor film formed by a laser crystallization method or a heating method using a metal catalyst.

  Similarly to the light-emitting device, when an amorphous semiconductor film is used, a driver circuit such as a signal line driver circuit or a scan line driver circuit can be mounted using an IC chip or a driver IC.

  The pixel portion 202 includes a switching TFT 221 and a capacitor 245. The switching TFT 221 can be formed using a polycrystalline semiconductor, a SAS, or an amorphous semiconductor formed by a laser crystallization method or a heating method using a metal catalyst. The capacitor 245 can be formed using a semiconductor film to which an impurity is added and a gate insulating film sandwiched between gate electrodes. A pixel electrode 250 is provided so as to be connected to one electrode of the switching TFT 211. The signal line driver circuit 200 includes an n-channel TFT 223 and a p-channel TFT 224. An insulator 214 is provided so as to cover the signal line driver circuit, the pixel electrode 250, and the switching TFT 211 as necessary, so that flatness can be improved.

  On the second substrate 204, a black matrix 253 is provided at a position corresponding to the signal line driver circuit 200, and a color filter 252 is provided at least at a position corresponding to the pixel portion. The color filter 252 can be formed using the layout of the above embodiment mode. At this time, a black matrix is formed instead of the bank. Then, the second substrate 204 over which the counter electrode 251 is formed is subjected to rubbing treatment, and is bonded to the first substrate 210 with the spacer 255 interposed therebetween.

  A liquid crystal layer is injected between the first substrate 210 and the second substrate 204. In the case of injecting the liquid crystal layer, it may be performed in a vacuum. Alternatively, a liquid crystal layer may be dropped onto the first substrate 210 and bonded to the second substrate 204. A droplet discharge method can be used as means for dropping liquid crystal. In particular, for a large substrate, it is preferable to drop the liquid crystal layer rather than injecting it. This is because when the liquid crystal injection method is used, the processing chamber is enlarged as the substrate becomes large, and the weight of the substrate increases, resulting in difficulty.

  When the liquid crystal is dropped, first, a sealing material is formed around one of the substrates. The reason why one substrate is described is that a sealant may be formed on either the first substrate 210 or the second substrate 204. At this time, the sealing material is formed so that the start point and the end point of the sealing material coincide and close. Thereafter, one or more liquid crystals are dropped. In the case of a large substrate, a plurality of liquid crystals are dropped at a plurality of locations. Then, it is brought into a vacuum state and bonded to the other substrate. This is because in a vacuum state, unnecessary air can be removed, and damage and expansion of the sealing material due to air can be prevented.

  Next, at least two points in the region where the sealing material is formed are solidified and bonded to perform temporary fixing. In the case where an ultraviolet curable resin is used for the sealing material, it is only necessary to irradiate ultraviolet rays to two or more points in the region where the sealing material is formed. Thereafter, the substrate is taken out of the processing chamber and the entire sealing material is solidified and bonded in order to perform the final fixing. At this time, a light shielding material is preferably arranged so that the thin film transistor and the liquid crystal are not irradiated with ultraviolet rays.

  Further, in order to maintain a gap between the substrates, a columnar or spherical spacer may be used in addition to the sealant.

  After that, the first substrate 210 and the second substrate 204 may be provided with a polarizing plate or a circular polarizing plate to increase contrast. Further, an antireflection film may be provided.

  After that, the FPC 209 may be bonded using an anisotropic conductive film to connect the external circuit and the signal line driver circuit or the scan line driver circuit.

Example 1
In this example, a display simulation result using the pixel layout shown in Embodiment Mode 1 is shown.

  FIG. 10 shows an image in the case where the pixel layout shown in Embodiment Mode 1 is used, and FIG. 11 shows an image in the case where the conventional pixel layout arranged in a stripe shape is used. 10 and 11, the element pitch, that is, the bank interval is the same. Compared to FIG. 11, it can be seen that FIG. 10 having the pixel layout of the present invention has higher definition.

  FIG. 12 shows the relationship between the pixel layout described in Embodiments 1 and 2, the definition in the conventional pixel layout, and the aperture ratio. When the definition is 302 ppi (one side of the pixel is 84 μm), the aperture ratio is 4.9% in the conventional layout of the pixels arranged in a stripe shape, whereas in the pixel layout shown in the first embodiment, In the pixel layout shown in Embodiment Mode 2, the aperture ratio is 27.6%, and the aperture ratio is 46.3%.

  As described above, the pixel layout of the present invention can achieve high definition display even if the element pitch is the same as the conventional one.

The figure which shows the layout of the pixel of this invention. The figure which shows the layout of the pixel of this invention. The figure which shows the layout of the pixel of this invention. The figure which shows the layout of the pixel of this invention. The figure which shows the layout of the pixel of this invention. FIG. 6 illustrates a pixel circuit of the present invention. FIG. 9 illustrates a light-emitting device having a pixel of the present invention. FIG. 14 illustrates a liquid crystal display device including a pixel of the present invention. The figure which shows the layout of the conventional pixel. The figure which shows the image by the light-emitting device of this invention. The figure which shows the image by the conventional light-emitting device. The graph which shows the relationship between the definition by the pixel layout of this invention, and an aperture ratio.

Claims (17)

A plurality of adjacent first color regions of the same color;
A plurality of adjacent second color identical color regions;
A plurality of adjacent third color identical color regions;
A first color element formation region having a plurality of adjacent first color same color regions;
A second color element formation region having the same color region of the plurality of adjacent second colors;
A third color element forming region having the same color region of a plurality of adjacent third colors,
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first color element formation regions are arranged obliquely,
The plurality of second color element formation regions are arranged obliquely,
The plurality of third color element formation regions are arranged obliquely,
The plurality of first color same color regions included in the first color element forming region are surrounded by an insulating film having a first width;
The plurality of second color same color regions included in the second color element formation region are surrounded by the first width insulating film,
The plurality of third-color same-color regions included in the third-color element formation region are surrounded by the first width insulating film,
An insulating film having a second width that is narrower than the first width is provided between adjacent ones of the same color regions of the plurality of the same color regions of the first color that the element formation region of the first color has. Provided,
The insulating film having the second width is provided between the same color regions of the second colors adjacent to each other among the plurality of the same color regions of the second color that the element formation region of the second color has.
The insulating film having the second width is provided between the same color regions of the third color adjacent to each other among the plurality of the same color regions of the third color that the element formation region of the third color has,
The light-emitting device, wherein one pixel has the same color region of the first to third colors adjacent to each other through the insulating film having the first width . A plurality of adjacent first color regions of the same color;
A plurality of adjacent second color identical color regions;
A plurality of adjacent third color identical color regions;
A first color element formation region having a plurality of adjacent first color same color regions;
A second color element formation region having the same color region of the plurality of adjacent second colors;
A third color element forming region having the same color region of a plurality of adjacent third colors,
The second color element formation region is arranged in a row direction with respect to the first color element formation region;
The third color element formation region is arranged in a column direction with respect to the first color element formation region;
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first color same color regions included in the first color element forming region are surrounded by an insulating film having a first width;
The plurality of second color same color regions included in the second color element formation region are surrounded by the first width insulating film,
The plurality of third-color same-color regions included in the third-color element formation region are surrounded by the first width insulating film,
An insulating film having a second width that is narrower than the first width is provided between adjacent ones of the same color regions of the plurality of the same color regions of the first color that the element formation region of the first color has. Provided,
The insulating film having the second width is provided between the same color regions of the second colors adjacent to each other among the plurality of the same color regions of the second color that the element formation region of the second color has.
The insulating film having the second width is provided between the same color regions of the third color adjacent to each other among the plurality of the same color regions of the third color that the element formation region of the third color has,
The light-emitting device, wherein one pixel has the same color region of the first to third colors adjacent to each other through the insulating film having the first width . In claim 1 or 2 ,
The one pixel has a non-light-emitting region. In any one of Claims 1 thru | or 3 ,
The arrangement of the first to third color same area one pixel has the light-emitting device according to claim <br/> be L-shaped. In any one of Claims 1 thru | or 3 ,
The first to third color sequence in the same region, the first color said to the same color region in the row direction second color the same color region of and sequence of the first color the same color region of the one pixel has the light emitting device according to claim <br/> be L-shaped same color region of the third color in the column direction are aligned against. A plurality of adjacent first color regions of the same color;
A plurality of adjacent second color identical color regions;
A plurality of adjacent third color identical color regions;
A first color element formation region having a plurality of adjacent first color same color regions;
A second color element formation region having the same color region of the plurality of adjacent second colors;
A third color element forming region having the same color region of a plurality of adjacent third colors,
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first-color element formation regions are arranged obliquely in a column direction while being shifted by 1.5 pitches from the first-color element formation regions,
The plurality of second-color element formation regions are arranged obliquely in a column direction while being shifted by 1.5 pitches from the second-color element formation regions,
The plurality of third-color element formation regions are arranged obliquely in the column direction while being shifted by 1.5 pitches from the third-color element formation regions,
The plurality of first color same color regions included in the first color element forming region are surrounded by an insulating film having a first width;
The plurality of second color same color regions included in the second color element formation region are surrounded by the first width insulating film,
The plurality of third-color same-color regions included in the third-color element formation region are surrounded by the first width insulating film,
An insulating film having a second width that is narrower than the first width is provided between the same color areas of the first color that are adjacent to each other among the same color areas of the first color that the element formation area of the first color has. Provided,
The insulating film having the second width is provided between the same color regions of the second colors adjacent to each other among the plurality of the same color regions of the second color that the element formation region of the second color has.
The insulating film having the second width is provided between the same color regions adjacent to each other among the plurality of third color same color regions included in the third color element formation region,
The light-emitting device, wherein one pixel has the same color region of the first to third colors adjacent to each other through the insulating film having the first width . A plurality of adjacent first color regions of the same color;
A plurality of adjacent second color identical color regions;
A plurality of adjacent third color identical color regions;
A first color element formation region having a plurality of adjacent first color same color regions;
A second color element formation region having the same color region of the plurality of adjacent second colors;
A third color element forming region having the same color region of a plurality of adjacent third colors,
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first color element formation regions are arranged obliquely in the column direction while being shifted by an interval of the first color element formation regions × 1.5 intervals,
The plurality of second color element formation regions are arranged obliquely in the column direction while being shifted by an interval of 1.5 second intervals between the second color element formation regions,
The plurality of third color element formation regions are arranged obliquely in the column direction while being shifted by an interval of the third color element formation regions × 1.5 intervals,
The plurality of first color same color regions included in the first color element forming region are surrounded by an insulating film having a first width;
The plurality of second color same color regions included in the second color element formation region are surrounded by the first width insulating film,
The plurality of third-color same-color regions included in the third-color element formation region are surrounded by the first width insulating film,
An insulating film having a second width that is narrower than the first width is provided between adjacent ones of the same color regions of the plurality of the same color regions of the first color that the element formation region of the first color has. Provided,
The insulating film having the second width is provided between the same color regions of the second colors adjacent to each other among the plurality of the same color regions of the second color that the element formation region of the second color has.
The insulating film having the second width is provided between the same color regions of the third color adjacent to each other among the plurality of the same color regions of the third color that the element formation region of the third color has,
One pixel has the same color region of the first to third colors adjacent via the insulating film of the first width.
A light emitting device characterized by that. In claim 6 or 7 ,
The sequence of the one pixel has first to third color in the same region light emitting device according to claim <br/> be T-shaped. In claim 6 or 7 ,
Wherein the one pixel has first to sequence of the three colors of the same area light emitting device according to claim <br/> be triangular. Forming an insulating film having a first width and an insulating film having a second width narrower than the first width;
A plurality of first adjacent layers are provided in the first color element formation region surrounded by the first width insulating film so as to provide the second width insulating film therebetween using a first vapor deposition mask. Forming the same color area,
A plurality of second adjacent layers are provided so as to provide the second width insulating film between the second color element forming regions surrounded by the first width insulating film by using a second vapor deposition mask. Forming the same color area,
Using a third deposition mask, a plurality of third thirds adjacent to each other so as to provide the second width insulating film therebetween in a third color element formation region surrounded by the first width insulating film. A method for manufacturing a light-emitting device that forms a color-same color region,
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first color element formation regions are arranged obliquely,
The plurality of second color element formation regions are arranged obliquely,
The plurality of third color element formation regions are arranged obliquely,
One pixel has the same color region of the first to third colors adjacent via the insulating film of the first width.
A method for manufacturing a light-emitting device. Forming an insulating film having a first width and an insulating film having a second width narrower than the first width;
A plurality of first adjacent layers are provided in the first color element formation region surrounded by the first width insulating film so as to provide the second width insulating film therebetween using a first vapor deposition mask. Forming the same color area,
A plurality of second adjacent layers are provided so as to provide the second width insulating film between the second color element forming regions surrounded by the first width insulating film by using a second vapor deposition mask. Forming the same color area,
Using a third deposition mask, a plurality of third thirds adjacent to each other so as to provide the second width insulating film therebetween in a third color element formation region surrounded by the first width insulating film. A method for manufacturing a light-emitting device that forms a color-same color region,
The second color element formation region is arranged in a row direction with respect to the first color element formation region;
The third color element formation region is arranged in a column direction with respect to the first color element formation region;
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
One pixel has the same color region of the first to third colors adjacent via the insulating film of the first width.
A method for manufacturing a light-emitting device. In claim 10 or 11,
The method for manufacturing a light-emitting device, wherein the one pixel has a non-light-emitting region. In any one of Claims 10 thru | or 12,
The arrangement of the same areas of the first to third colors of the one pixel is L-shaped.
A method for manufacturing a light-emitting device. Forming an insulating film having a first width and an insulating film having a second width narrower than the first width;
A plurality of first adjacent layers are provided in the first color element formation region surrounded by the first width insulating film so as to provide the second width insulating film therebetween using a first vapor deposition mask. Forming the same color area,
A plurality of second adjacent layers are provided so as to provide the second width insulating film between the second color element forming regions surrounded by the first width insulating film by using a second vapor deposition mask. Forming the same color area,
Using a third deposition mask, a plurality of third thirds adjacent to each other so as to provide the second width insulating film therebetween in a third color element formation region surrounded by the first width insulating film. A method for manufacturing a light-emitting device that forms a color-same color region,
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first-color element formation regions are arranged obliquely in a column direction while being shifted by 1.5 pitches from the first-color element formation regions,
The plurality of second-color element formation regions are arranged obliquely in a column direction while being shifted by 1.5 pitches from the second-color element formation regions,
The plurality of third-color element formation regions are arranged obliquely in the column direction while being shifted by 1.5 pitches from the third-color element formation regions,
One pixel has the same color region of the first to third colors adjacent via the insulating film of the first width.
A method for manufacturing a light-emitting device. Forming an insulating film having a first width and an insulating film having a second width narrower than the first width;
A plurality of first adjacent layers are provided in the first color element formation region surrounded by the first width insulating film so as to provide the second width insulating film therebetween using a first vapor deposition mask. Forming the same color area,
A plurality of second adjacent layers are provided so as to provide the second width insulating film between the second color element forming regions surrounded by the first width insulating film by using a second vapor deposition mask. Forming the same color area,
Using a third deposition mask, a plurality of third thirds adjacent to each other so as to provide the second width insulating film therebetween in a third color element formation region surrounded by the first width insulating film. A method for manufacturing a light-emitting device that forms a color-same color region,
There are a plurality of element formation regions of the first color,
There are a plurality of element formation regions of the second color,
There are a plurality of third color element formation regions,
The plurality of first color element formation regions are arranged obliquely in the column direction while being shifted by an interval of the first color element formation regions × 1.5 intervals,
The plurality of second color element formation regions are arranged obliquely in the column direction while being shifted by an interval of 1.5 second intervals between the second color element formation regions,
The plurality of third color element formation regions are arranged obliquely in the column direction while being shifted by an interval of the third color element formation regions × 1.5 intervals,
One pixel has the same color region of the first to third colors adjacent via the insulating film of the first width.
A method for manufacturing a light-emitting device. In claim 14 or 15,
The arrangement of the same areas of the first to third colors of the one pixel is T-shaped.
A method for manufacturing a light-emitting device. In claim 14 or 15,
The arrangement of the same areas of the first to third colors of the one pixel is triangular.
A method for manufacturing a light-emitting device.