JP4600052B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device, and more particularly to a cooling technique for a semiconductor device in which a plurality of power semiconductor elements are stacked.

  Japanese Patent Laying-Open No. 9-260585 (Patent Document 1) discloses a configuration of a semiconductor device in which a plurality of power semiconductor elements are stacked. The semiconductor device includes a plurality of double-sided cooling type flat semiconductor elements, a plurality of cooling bodies, a cooling water distribution header, and a cooling water collecting header.

  In this semiconductor device, a plurality of double-sided cooling type flat semiconductor elements and cooling bodies are alternately stacked. Then, each of the flat semiconductor elements is cooled from both sides by flowing cooling water from the cooling water distribution header to the cooling water assembly header through each cooling body (see Patent Document 1).

According to such a stacked semiconductor device, the size of the device can be reduced as compared with the case where a plurality of power semiconductor elements are arranged in a plane.
JP-A-9-260585 (FIGS. 2 and 4)

  In a stacked semiconductor device as disclosed in Japanese Patent Laid-Open No. 9-260585, the device can be reduced in size, but heat is easily accumulated inside the semiconductor device because the degree of integration of the device is high. . Therefore, in such a stacked semiconductor device, it is important to effectively cool the semiconductor element by efficiently disposing a cooling water channel.

  On the other hand, in recent years, a hybrid vehicle equipped with an inverter as a semiconductor device has received much attention. This hybrid vehicle is a vehicle that uses a DC power source, an inverter, and a motor driven by the inverter as a power source in addition to a conventional engine. In addition, this hybrid vehicle is known to have a motor generator that starts an engine and generates power using power from the engine. In a hybrid vehicle, there is a strong demand for downsizing each device to be mounted, and the stacked inverter device as described above is often used.

  FIG. 8 is a block diagram schematically showing a cooling structure of an inverter device conventionally mounted in a hybrid vehicle. Referring to FIG. 8, this inverter device includes inverters 510 and 520, cooling bodies 542 to 554, and cooling water channels 530 and 535. Inverter 510 is an inverter for driving a motor coupled to the drive wheels. Inverter 520 is an inverter for driving a motor generator coupled to the engine. In each of inverters 510 and 520, six semiconductor modules modularized for each of the upper and lower arms of the U, V, and W phase arms are stacked via cooling bodies 542 to 554. Inverters 510 and 520 are arranged in series so that inverter 510 is on the upstream side in the cooling system, and six semiconductor modules in each of inverters 510 and 520 are arranged in parallel in the cooling system.

  The cooling water channel 530 is connected to the water pump 560 and supplies the cooling water supplied from the water pump 560 to the cooling bodies 542 to 554. The cooling water channel 535 is connected to the radiator 570 and supplies the cooling water discharged from the cooling bodies 542 to 554 to the radiator 570. Then, the cooling water cooled by the radiator 570 is supplied to the water pump 560 via the cooling water channel 556.

  In this inverter device, each of the semiconductor modules of the inverters 510 and 520 is cooled from both sides by the cooling bodies 542 to 554, but thermal interference occurs between the semiconductor modules of the inverters 510 and 520 that are cooled by the same cooling body. There is a problem that heat is accumulated between the inverters 510 and 520. Therefore, it is important to effectively cool the semiconductor device by preventing the occurrence of such thermal interference.

  In addition, the pressure in the cooling water channel decreases further downstream due to the effect of pressure loss in the cooling water channel, and generally there is a difference in cooling performance between the cooling body on the upstream side and the cooling body on the downstream side. If there is a difference in cooling performance, the cooling system must be designed based on a cooling body with a low cooling performance, and the upstream cooling body with a relatively high cooling performance becomes excessive in capacity. As a result, the cooling efficiency decreases. Therefore, it is important to shorten the cooling water path length from the cooling water input port to the output port in the inverter device as much as possible to suppress the imbalance of the cooling performance between the cooling bodies, and to improve the cooling efficiency as a whole.

  The semiconductor device disclosed in Japanese Patent Laid-Open No. 9-260585 described above can reduce the size of the device by stacking the semiconductor element and the cooling body. Cannot be resolved.

  Therefore, the present invention has been made to solve such a problem, and an object thereof is to provide a semiconductor device capable of effectively cooling a large number of power semiconductor elements.

  Another object of the present invention is to provide a semiconductor device capable of efficiently cooling a large number of power semiconductor elements.

  According to the present invention, the semiconductor device is provided in parallel with a predetermined direction, and each of the first and second semiconductor element groups in which a plurality of semiconductor elements and cooling bodies are alternately stacked in the predetermined direction. , Arranged on both sides of the first and second semiconductor element groups along a predetermined direction, and connected to each cooling body of the first semiconductor element group and each cooling body of the second semiconductor element group, respectively. Arranged along a predetermined direction between the first and second refrigerant paths and the first and second semiconductor element groups, and in each cooling body of the first and second semiconductor element groups And a third refrigerant path to be connected.

  In the semiconductor device according to the present invention, each of the plurality of semiconductor elements in the first and second semiconductor element groups is cooled from both sides by the cooling body. The first and second semiconductor element groups are cooled from both sides by the first and second refrigerant paths. Further, the first and second semiconductor element groups are cooled from between the first and second semiconductor element groups by the third refrigerant path.

  Therefore, according to the present invention, thermal interference occurring between the first and second semiconductor element groups can be prevented, and a plurality of semiconductor elements in the first and second semiconductor element groups can be effectively cooled. be able to.

  Preferably, the first to third refrigerant paths are provided in parallel to the supply means for supplying the refrigerant to the first to third refrigerant paths.

  In this semiconductor device, compared to a case where a plurality of refrigerant paths are connected in series between the refrigerant input port and the output port, the path length of the refrigerant path from the refrigerant input port to the output port is short. The pressure loss at is small. Therefore, according to the present invention, the plurality of semiconductor elements in the first and second semiconductor element groups can be efficiently cooled.

  Preferably, the semiconductor device further includes a storage unit that is disposed between the supply unit and the first to third refrigerant paths and stores the refrigerant supplied to the first to third refrigerant paths.

  In this semiconductor device, the storage unit is provided, so that the refrigerant is stably supplied to the first to third refrigerant paths. Therefore, according to the present invention, it is possible to suppress variation in cooling between the plurality of semiconductor elements in the first and second semiconductor element groups, and as a result, it is possible to efficiently cool the plurality of semiconductor elements.

  Preferably, the semiconductor device further includes a plurality of check valves respectively disposed at connection portions between the third refrigerant path and the respective cooling bodies of the first and second semiconductor element groups, and the third refrigerant path Passes through the refrigerant from each cooling body of the first and second semiconductor element groups, and the plurality of check valves pass through the plurality of cooling bodies from the third refrigerant path to the first and second refrigerant paths. Prevents refrigerant from flowing into

  Preferably, the semiconductor device includes a connection portion between the first refrigerant path and each cooling body of the first semiconductor element group, and a connection portion between the second refrigerant path and each cooling body of the second semiconductor element group. The third refrigerant path supplies refrigerant to the respective cooling bodies of the first and second semiconductor element groups, and the plurality of check valves include the first check valve disposed in the first and second semiconductor element groups, respectively. The refrigerant is prevented from flowing from the second refrigerant path to the third refrigerant path via the plurality of cooling bodies.

  In the semiconductor device described above, the plurality of check valves prevent the refrigerant that has flowed through the plurality of cooling bodies from flowing back to the plurality of cooling bodies. Therefore, according to the present invention, the flow of the refrigerant is stabilized, and as a result, variation in cooling can be suppressed.

  Preferably, the area of the flow path through which the refrigerant flows in the plurality of cooling bodies is larger as the cooling body disposed downstream along the predetermined direction.

  In this semiconductor device, since the coolant flow rate increases as the cooling body is arranged downstream in the predetermined direction, the decrease in cooling efficiency due to the pressure loss that increases in the downstream direction is compensated for. The cooling capacity is balanced with the cooling body on the side. Therefore, according to the present invention, the variation in cooling of the plurality of semiconductor elements in the first and second semiconductor element groups can be suppressed, and as a result, the plurality of semiconductor elements can be efficiently cooled.

  As described above, according to the present invention, it is possible to effectively and efficiently cool a large number of stacked power semiconductor elements. In addition, since a plurality of power semiconductor elements are stacked, the semiconductor device can be reduced in size.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

[Embodiment 1]
1 is a schematic block diagram of a load drive device including an inverter device shown as an example of a semiconductor device according to Embodiment 1 of the present invention. Referring to FIG. 1, load drive device 1 includes a battery B, a capacitor C, inverters 10 and 20, a control device 30, a power supply line PL, and a ground line SL.

  The load driving device 1 is mounted on, for example, a hybrid vehicle. Motor generator MG1 operates as a generator driven by the engine and is incorporated in the hybrid vehicle as an electric motor that can start the engine, and motor generator MG2 drives the driving wheels of the hybrid vehicle. As an electric motor, it is installed in a hybrid vehicle.

  Motor generators MG1 and MG2 driven by load driving device 1 are formed of, for example, a three-phase AC synchronous motor. Motor generator MG <b> 1 generates a three-phase AC voltage using the engine output, and outputs the generated three-phase AC voltage to inverter 10. Motor generator MG1 generates a driving force by the three-phase AC voltage received from inverter 10, and starts the engine. Motor generator MG <b> 2 generates vehicle driving torque by the three-phase AC voltage received from inverter 20. Motor generator MG2 generates a three-phase AC voltage and outputs it to inverter 20 during regenerative braking of the vehicle.

  The battery B is a direct current power source, and is composed of, for example, a secondary battery such as nickel metal hydride or lithium ion. Battery B outputs the generated DC voltage to inverters 10 and 20 and is charged by the DC voltage output from inverters 10 and 20.

  Inverter 10 includes a U-phase arm 12, a V-phase arm 14, and a W-phase arm 16. U-phase arm 12, V-phase arm 14 and W-phase arm 16 are connected in parallel between power supply line PL and ground line SL. The U-phase arm 12 includes power transistors Q11 and Q12 connected in series, the V-phase arm 14 includes power transistors Q13 and Q14 connected in series, and the W-phase arm 16 includes power connected in series. It consists of transistors Q15 and Q16. Each of the power transistors Q11 to Q16 is made of, for example, an IGBT (Insulated Gate Bipolar Transistor). Between the collectors and emitters of the power transistors Q11 to Q16, diodes D11 to D16 that flow current from the emitter side to the collector side are respectively connected. A connection point of each power transistor in each phase arm is connected to a coil end opposite to the neutral point of each phase coil of motor generator MG1.

  Inverter 10 converts a DC voltage supplied from power supply line PL into a three-phase AC voltage based on signal PWM1 from control device 30 to drive motor generator MG1. Thereby, motor generator MG1 is driven to generate torque specified by the torque command value. Inverter 10 receives the output from the engine, converts the three-phase AC voltage generated by motor generator MG1 into a DC voltage based on signal PWM1 from control device 30, and converts the converted DC voltage to power supply line PL. Output.

  Inverter 20 includes a U-phase arm 22, a V-phase arm 24 and a W-phase arm 26. U-phase arm 22, V-phase arm 24, and W-phase arm 26 are connected in parallel between power supply line PL and ground line SL. The U-phase arm 22 includes power transistors Q21 and Q22 connected in series, the V-phase arm 24 includes power transistors Q23 and Q24 connected in series, and the W-phase arm 26 includes power connected in series. It consists of transistors Q25 and Q26. Each power transistor Q21 to Q26 is also made of, for example, an IGBT. Between the collectors and emitters of the power transistors Q21 to Q26, diodes D21 to D26 that flow current from the emitter side to the collector side are respectively connected. Also in inverter 20, the connection point of each power transistor in each phase arm is connected to the coil end opposite to the neutral point of each phase coil of motor generator MG2.

  Based on signal PWM2 from control device 30, inverter 20 converts a DC voltage supplied from power supply line PL into a three-phase AC voltage, and drives motor generator MG2. Thereby, motor generator MG2 is driven to generate torque specified by the torque command value. Inverter 20 also converts the three-phase AC voltage generated by motor generator MG2 upon receipt of the rotational force from the drive shaft into a DC voltage based on signal PWM2 from control device 30 during regenerative braking of the vehicle. The DC voltage is output to the power line PL.

  Capacitor C is connected between power supply line PL and ground line SL, and smoothes voltage fluctuations between power supply line PL and ground line SL.

  Control device 30 generates signal PWM1 for driving motor generator MG1 based on the voltage between power supply line PL and ground line SL, and the motor current and torque command value of motor generator MG1. The signal PWM1 is output to the inverter 10. Control device 30 generates signal PWM2 for driving motor generator MG2 based on the voltage between power supply line PL and ground line SL, and the motor current and torque command value of motor generator MG2. The generated signal PWM2 is output to the inverter 20.

  FIG. 2 is a block diagram schematically showing a cooling structure of the inverter device shown in FIG. Referring to FIG. 2, the inverter device includes inverters 10 and 20, cooling bodies 72 to 84, cooling water channels 50, 55, 60, 122 to 126, a cooling water tank 90, a water pump 100, and a radiator 110. Including.

  In inverter 10, the upper and lower arms of U-phase arm 12, the upper and lower arms of V-phase arm 14, and the upper and lower arms of W-phase arm 16 shown in FIG. Six semiconductor modules are stacked via the cooling bodies 72 to 84. Inverter 20 is also modularized for each of the upper and lower arms of U-phase arm 22, the upper and lower arms of V-phase arm 24, and the upper and lower arms of W-phase arm 26 shown in FIG. 1. In total, six semiconductor modules are stacked via the cooling bodies 72 to 84. The inverters 10 and 20 are arranged in parallel along the stacking direction of the semiconductor modules.

  Cooling bodies 72 to 84 are alternately stacked with six semiconductor modules in each of inverters 10 and 20, and are connected to cooling water channels 50, 55, and 60. The cooling bodies 72 to 84 cool the six semiconductor modules in each of the inverters 10 and 20 from both sides by supplying cooling water from the cooling water channels 50 and 55.

  The cooling water channel 50 is disposed on the opposite side of the inverter 20 across the inverter 10 along the stacking direction of the semiconductor modules. The cooling water channel 50 is connected to the cooling bodies 72 to 84 and supplies the cooling water supplied from the cooling water tank 90 to the cooling bodies 72 to 84. In addition, the cooling water channel 50 cools the inverter 10 from the side surface by the cooling water supplied from the cooling water tank 90.

  The cooling water channel 55 is disposed on the opposite side of the inverter 10 across the inverter 20 along the stacking direction of the semiconductor modules. The cooling water channel 55 is also connected to the cooling bodies 72 to 84 and supplies the cooling water supplied from the cooling water tank 90 to the cooling bodies 72 to 84. The cooling water channel 55 cools the inverter 20 from the side surface with the cooling water supplied from the cooling water tank 90.

  The cooling water channel 60 is disposed between the inverter 10 and the inverter 20 along the stacking direction of the semiconductor modules. The cooling water passage 60 is connected to the cooling bodies 72 to 84 and supplies the cooling water discharged from the cooling bodies 72 to 84 to the cooling water passage 122 on the outlet side. The cooling water channel 60 cools the inverters 10 and 20 from between the inverter 10 and the inverter 20 with the cooling water supplied from the cooling water tank 90.

  The flow passage area of the connection portion between each of the cooling water passages 50 and 55 and the outlet cooling water passage 122 is smaller than the flow passage area of the connection portion between the cooling water passage 60 and the cooling water passage 122. The flow of the cooling water from the cooling water channels 50 and 55 to the cooling water channel 60 through the cooling bodies 72 to 84 is formed.

  Further, a check valve (not shown) is provided at each connection portion between the cooling water passage 60 and the cooling bodies 72 to 84, and the cooling water flowing from the cooling bodies 72 to 84 to the cooling water passage 60 is cooled to the cooling bodies 72 to 72. Backflow to 84 is prevented.

  The cooling water tank 90 temporarily stores the cooling water supplied from the water pump 100 and supplies the stored cooling water to the cooling water channels 50, 55, 60. The cooling water tank 90 is provided to stably supply the cooling water to the three cooling water channels 50, 55, 60.

  The water pump 100 applies a predetermined discharge pressure to the cooling water from the radiator 110 and supplies the cooling water to the cooling water tank 90 to circulate the cooling water in the inverter device. Radiator 110 cools the cooling water received from inverters 10 and 20.

  In this inverter device, the water pump 100 supplies cooling water to the cooling water tank 90, and the cooling water tank 90 supplies cooling water to the cooling water channels 50, 55, 60. The cooling water channels 50 and 55 output the cooling water supplied from the cooling water tank 90 to the outlet cooling water channel 122 and supply the cooling water to the cooling bodies 72 to 84. The cooling water channel 60 outputs the cooling water supplied from the cooling water tank 90 and the cooling water from the cooling bodies 72 to 84 to the cooling water channel 122 on the outlet side.

  FIG. 3 is an enlarged view of a portion A shown in FIG. Referring to FIG. 3, check valves 152 and 154 are arranged at the connection portion between cooling water channel 60 and cooling body 84. The check valves 152 and 154 have a structure that allows cooling water to flow from the cooling body 84 to the cooling water channel 60, but does not flow cooling water from the cooling water channel 60 to the cooling body 84.

  Although not particularly illustrated, such a check valve is disposed at each connection portion between the cooling water channel 60 and the cooling bodies 72 to 84.

  As described above, according to the first embodiment, since the semiconductor modules are stacked in each of the inverters 10 and 20, the inverter device can be reduced in size. And since the cooling water channel 60 is arrange | positioned between the inverter 10 and the inverter 20, and the inverters 10 and 20 are cooled from between the inverter 10 and the inverter 20, the thermal interference with the inverter 10 and the inverter 20 is prevented. be able to.

  Further, since the cooling water channels 50, 55, 60 are connected in parallel to the water pump 100, the length of the cooling water channel is shorter than the conventional inverter device in which the cooling water channels are connected in series, and the pressure of the cooling water Loss is small. Therefore, variation in cooling performance between the upstream side and the downstream side can be suppressed, and efficient cooling is realized.

  Further, since the cooling water tank 90 is provided upstream of the cooling water channels 50, 55, 60, the cooling water is stably supplied to the cooling water channels 50, 55, 60. Further, since the check valve for preventing the cooling water from flowing back from the cooling water channel 60 to the cooling bodies 72 to 84 is provided, the flow of the cooling water in the inverter device is stabilized. Therefore, also from these points, occurrence of variations in cooling performance can be suppressed, and efficient cooling can be realized.

[Modification of Embodiment 1]
FIG. 4 is a block diagram schematically showing a cooling structure of the inverter device according to the modification of the first embodiment. Referring to FIG. 4, in this inverter device, the flow passage area of the connection portion between cooling water passage 60 and outlet cooling water passage 122 is the flow rate of the connection portion between each of cooling water passages 50 and 55 and cooling water passage 122. It is smaller than the road area, and thereby, a flow of cooling water from the cooling water channel 60 to the cooling water channels 50 and 55 via the cooling bodies 72 to 84 is formed.

  In the inverter device according to the first embodiment shown in FIG. 2, the check valves provided at the connection portions between the cooling water passage 60 and the cooling bodies 72 to 84 are the cooling water passages 50 and 55 and the cooling bodies 72 to 84. The check water prevents the cooling water flowing from the cooling bodies 72 to 84 from flowing into the cooling water channels 50 and 55 from flowing back to the cooling bodies 72 to 84.

  The remaining structure of the inverter device according to the modification of the first embodiment is the same as that of the inverter device according to the first embodiment shown in FIG.

  FIG. 5 is an enlarged view of a portion B shown in FIG. Referring to FIG. 5, a check valve 156 is disposed at a connection portion between the cooling water channel 50 and the cooling body 84. The check valve 156 can flow cooling water from the cooling body 84 to the cooling water channel 50, but has a structure that does not flow cooling water from the cooling water channel 50 to the cooling body 84.

  Although not particularly illustrated, such a check valve is disposed at each connection portion between the cooling water channels 50 and 55 and the cooling bodies 72 to 84.

  Also by this modification of the first embodiment, the same effect as in the first embodiment can be obtained.

[Embodiment 2]
FIG. 6 is a block diagram schematically showing a cooling structure of the inverter device according to the second embodiment. Referring to FIG. 6, the inverter device according to the second embodiment includes cooling bodies 72 </ b> A to 84 </ b> A instead of cooling bodies 72 to 84 in the structure of the inverter device according to the first embodiment shown in FIG. 2. The cooling bodies 72 </ b> A to 84 </ b> A have a cooling water passage area larger as the cooling body is disposed downstream of the water pump 100.

  The reason for this structure is that the cooling body disposed downstream of the water pump 100 has a lower cooling efficiency due to the effect of pressure loss. In the second embodiment, the cooling body disposed downstream. By making the flow path area of the body larger than the flow path area of the cooling body disposed upstream, the cooling body disposed downstream will increase the flow rate of cooling water, and the upstream cooling body and the downstream side The cooling capacity with the cooling body is made uniform.

  In the above, the flow area of the connection portion between each of the cooling water channels 50 and 55 and the outlet cooling water channel 122 is smaller than the flow channel area of the connection portion between the cooling water channel 60 and the cooling water channel 122. Although the flow of the cooling water from the cooling water channels 50 and 55 to the cooling water channel 60 through the cooling bodies 72A to 84A is formed, the flow channel area of the connection portion between the cooling water channel 60 and the cooling water channel 122 is defined as the cooling water channel 50, The flow of the cooling water from the cooling water channel 60 to the cooling water channels 50 and 55 via the cooling bodies 72 </ b> A to 84 </ b> A may be formed rather than the flow channel area of the connection portion between each of the 55 and the cooling water channel 122. .

  As described above, according to the second embodiment, since the flow rate of the cooling water is increased in the downstream cooling body, the cooling performance between the upstream cooling body and the downstream cooling body in which pressure loss occurs is improved. Variation can be further suppressed. Therefore, more efficient cooling can be realized.

[Embodiment 3]
FIG. 7 is a block diagram schematically showing a cooling structure of the inverter device according to the third embodiment. Referring to FIG. 7, the inverter device according to the third embodiment does not include cooling water tank 90 and is replaced with water pump 100 and radiator 110 in the structure of the inverter device according to the first embodiment shown in FIG. 2. Water pumps 102 to 106 and a radiator 112 are included.

  The water pump 102 is disposed between the radiator 112 and the cooling water channel 50, applies a predetermined discharge pressure to the cooling water from the cooling water channel 162, and supplies the cooling water to the cooling water channel 50. The water pump 104 is disposed between the radiator 112 and the cooling water passage 55, applies a predetermined discharge pressure to the cooling water from the cooling water passage 164, and supplies the cooling water to the cooling water passage 55. The water pump 106 is disposed between the radiator 112 and the cooling water channel 60, applies a predetermined discharge pressure to the cooling water from the cooling water channel 166, and supplies the cooling water to the cooling water channel 60.

  The discharge capacities of the water pumps 102 and 104 are the same as each other and are larger than the discharge capacities of the water pump 106. Thus, the cooling water is stably supplied to the cooling water channels 50, 55, 60 by the water pumps 102-106, and the cooling water from the cooling water channels 50, 55 to the cooling water channel 60 via the cooling bodies 72-84. A flow is formed.

  The discharge capacity of the water pump 106 may be larger than the discharge capacity of the water pumps 102 and 104. In this case, a flow of cooling water from the cooling water channel 60 to the cooling water channels 50 and 55 via the cooling bodies 72 to 84 is formed.

  As described above, according to the third embodiment, since the water pumps 102, 104, 106 for supplying the cooling water to the cooling water channels 50, 55, 60 are provided, the cooling water channels 50, 55 are more stably provided. , 60 can be supplied with cooling water. Further, by providing the water pumps 102, 104, and 106 with a discharge capacity difference, the cooling water flowing through the cooling water channels 50, 55, and 60 and the cooling bodies 72 to 84 can be controlled to a desired flow.

  In the third embodiment, in consideration of the cost and noise of the water pump, the water pumps 102 and 104 may not be provided, or the water pump 106 may not be provided. That is, in the configuration that does not include the water pumps 102 and 104, the cooling water is supplied from the water pump 106 to the cooling water channels 50 and 55 via the cooling water channel 60 and the cooling bodies 72 to 84, and in the configuration that does not include the water pump 106, Cooling water is supplied from the water pumps 102 and 104 to the cooling water channel 60 via the cooling water channels 50 and 55 and the cooling bodies 72 to 84.

  Further, in each of the above embodiments, a plurality of semiconductor modules and cooling bodies are alternately stacked. However, a module including a cooling body may be modularized, and a plurality of semiconductor modules may be stacked.

  In each of the above embodiments, inverters 10 and 20 correspond to “first semiconductor element group” and “second semiconductor element group” in the present invention, respectively, and cooling water channels 50, 55, and 60 are These correspond to the “first refrigerant path”, “second refrigerant path”, and “third refrigerant path” in the present invention, respectively. Cooling water tank 90 corresponds to a “reservoir” in the present invention.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and is intended to include meanings equivalent to the scope of claims for patent and all modifications within the scope.

1 is a schematic block diagram of a load drive device including an inverter device shown as an example of a semiconductor device according to a first embodiment of the present invention. It is a block diagram which shows roughly the cooling structure of the inverter apparatus shown in FIG. It is an enlarged view of the A section shown in FIG. FIG. 7 is a block diagram schematically showing a cooling structure for an inverter device according to a modification of the first embodiment. It is an enlarged view of the B section shown in FIG. FIG. 6 is a block diagram schematically showing a cooling structure of an inverter device according to a second embodiment. FIG. 10 is a block diagram schematically showing a cooling structure of an inverter device according to a third embodiment. It is a block diagram which shows roughly the cooling structure of the inverter apparatus conventionally mounted in the hybrid vehicle.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Load drive device, 10, 20 Inverter, 12, 22 U-phase arm, 14, 24 V-phase arm, 16, 26 W-phase arm, 30 Control device, 50, 55, 60, 122-126, 162-166 Cooling water channel 72-84, 72A-84A Cooling body, 90 Cooling water tank, 100, 102, 104, 106 Water pump, 110, 112 Radiator, 152, 154, 156 Check valve, B battery, C condenser, MG1, MG2 motor Generator, Q11 to Q16, Q21 to Q26 Power transistor, D11 to D16, D21 to D26 Diode, PL power supply line, SL ground line.

Claims (6)

A first semiconductor element group and a second semiconductor element group, which are arranged in parallel with each other in a predetermined direction, and in which a plurality of semiconductor elements and cooling bodies are alternately stacked in the predetermined direction;
The first and second semiconductor element groups are respectively disposed on both sides along the predetermined direction. The cooling bodies of the first semiconductor element group and the cooling bodies of the second semiconductor element group are respectively provided. Connected first and second refrigerant paths;
A third refrigerant path disposed between the first and second semiconductor element groups along the predetermined direction and connected to each cooling body of the first and second semiconductor element groups;
A drainage channel to which each of the first to third refrigerant channels is connected,
The first flow passage area of the connection portion between each of the first and second refrigerant passages and the drainage channel is the second flow passage area of the connection portion between the third refrigerant passage and the drainage passage. different, semiconductors devices.   The semiconductor device according to claim 1, wherein the first to third refrigerant paths are provided in parallel to a supply unit that supplies the refrigerant to the first to third refrigerant paths.   3. The semiconductor according to claim 2, further comprising a storage unit that is disposed between the supply unit and the first to third refrigerant paths and stores the refrigerant supplied to the first to third refrigerant paths. apparatus. The first channel area is smaller than the second channel area,
A plurality of check valves respectively disposed at connection portions between the third refrigerant path and the cooling bodies of the first and second semiconductor element groups;
The third refrigerant path passes the refrigerant from each cooling body of the first and second semiconductor element groups,
2. The semiconductor device according to claim 1 , wherein the plurality of check valves prevent a refrigerant from flowing from the third refrigerant path to the first and second refrigerant paths via the plurality of cooling bodies. . The second channel area is smaller than the first channel area;
Arranged at the connection portion between the first refrigerant path and each cooling body of the first semiconductor element group, and at the connection portion between the second refrigerant path and each cooling body of the second semiconductor element group, respectively. A plurality of check valves,
The third refrigerant path supplies refrigerant to each cooling body of the first and second semiconductor element groups,
2. The semiconductor device according to claim 1 , wherein the plurality of check valves prevent refrigerant from flowing from the first and second refrigerant paths to the third refrigerant path via the plurality of cooling bodies. . Area of the refrigerant is made to flow channel in the plurality of the cooling body, the larger the predetermined cooling body which is disposed downstream along the direction, the semiconductor as claimed in any one of claims 5 apparatus.

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