JP4594137B2 - Film forming apparatus and organic polymer film forming method - Google Patents

Film forming apparatus and organic polymer film forming method Download PDF

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JP4594137B2
JP4594137B2 JP2005069654A JP2005069654A JP4594137B2 JP 4594137 B2 JP4594137 B2 JP 4594137B2 JP 2005069654 A JP2005069654 A JP 2005069654A JP 2005069654 A JP2005069654 A JP 2005069654A JP 4594137 B2 JP4594137 B2 JP 4594137B2
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film
substrate
holding member
film forming
forming apparatus
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JP2006249532A (en
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一寿 高橋
卓人 池野
良夫 大野
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Ulvac Inc
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Description

本発明は、ウェーハやガラス板等の基板に、プラズマ重合や蒸着重合等の重合法により、有機皮膜を形成する皮膜形成装置及びそれを用いた有機高分子皮膜の形成方法に関する。   The present invention relates to a film forming apparatus for forming an organic film on a substrate such as a wafer or a glass plate by a polymerization method such as plasma polymerization or vapor deposition polymerization, and a method for forming an organic polymer film using the same.

従来、この種の皮膜形成装置において、処理室内に生じる粉塵が核となり、皮膜形成過程において、基板表面に異物突起ができるという問題があった。
この問題を解決するために、特許文献1には、基材(被着物)を所定の角度で傾斜させ、基材の一方の面を下向きになるように差し込むことができるように構成された櫛状の保持部材(ホルダー治具)が開示されている。
しかしながら、特許文献1に開示される保持部材では、保持部材から生じる発塵により、基板表面に形成される異物突起をなくすことはできなかった。更に、特許文献1に開示される皮膜形成装置は、保持部材と基板とが線状に接触しており、この部分にも皮膜が形成されるために、皮膜形成後に基板を保持部材から取り外す際に、せっかく基板上に形成された皮膜が剥離してしまうことがあった。また、保持部材が金属やセラミックスから構成されるような場合には、基板を保持部材に保持する際に基板表面を傷つけてしまうことがあった。
Conventionally, in this type of film forming apparatus, there has been a problem that dust generated in the processing chamber becomes a nucleus and foreign matter protrusions are formed on the substrate surface during the film forming process.
In order to solve this problem, Patent Document 1 discloses a comb configured such that a base material (attachment) is inclined at a predetermined angle, and one surface of the base material can be inserted downward. A shaped holding member (holder jig) is disclosed.
However, in the holding member disclosed in Patent Document 1, foreign matter protrusions formed on the substrate surface cannot be eliminated due to dust generated from the holding member. Furthermore, in the film forming apparatus disclosed in Patent Document 1, since the holding member and the substrate are in linear contact with each other, and a film is also formed on this portion, the substrate is removed from the holding member after the film is formed. In addition, the film formed on the substrate sometimes peels off. When the holding member is made of metal or ceramics, the substrate surface may be damaged when the substrate is held by the holding member.

特開2000−3250号公報(図3乃至図5)JP 2000-3250 A (FIGS. 3 to 5)

そこで、本発明は、成膜過程において基板に発塵による異物突起を生じさせることなく、しかも、保持部材から取り外す際に、基板に形成された皮膜を剥離させることがなく、更に、基板の表面を傷つけることがない皮膜形成装置及び有機高分子皮膜の形成方法を提供することを目的とする。   Therefore, the present invention does not cause foreign matter protrusion due to dust generation on the substrate during the film formation process, and does not peel off the film formed on the substrate when removed from the holding member. An object of the present invention is to provide a film forming apparatus and an organic polymer film forming method that do not damage the film.

本発明者等は前記課題を解決するべく鋭意検討の結果、次の通り解決手段を見いだした。
即ち、本発明の皮膜形成装置は、請求項1に記載の通り、処理室内において、保持部材により保持された基板に対して、モノマーガスを反応させて有機高分子皮膜を形成するための皮膜形成装置であって、前記保持部材を線状部材で構成し、前記基板を点接触により支持するその表面を、前記皮膜と同じ有機高分子からなる皮膜により被覆したことを特徴とする。
請求項2に記載の皮膜形成装置は、請求項1に記載の皮膜形成装置において、前記保持部材を被覆する皮膜を厚み1μm以上としたことを特徴とする。
請求項3に記載の皮膜形成装置は、請求項1又は2に記載の皮膜形成装置において、前記保持部材は、複数の前記基板を立設させ、隣接させて保持することを特徴とする。
請求項4に記載の皮膜形成装置は、請求項1又は2に記載の皮膜形成装置において、前記保持部材を構成する線状部材を円形断面とし、前記基板を点接触により支持することを特徴とする。
請求項5に記載の皮膜形成装置は、請求項1乃至3のいずれかに記載の皮膜形成装置において、前記有機高分子はポリイミドであることを特徴とする。
また、本発明の有機高分子皮膜の形成方法は、請求項6に記載の通り、請求項1乃至5の何れかに記載の皮膜形成装置を使用して、前記基板に前記有機高分子皮膜を形成することを特徴とする。
As a result of intensive studies to solve the above-mentioned problems, the present inventors have found a solution means as follows.
That is, the film forming apparatus of the present invention, as described in claim 1, forms a film for forming an organic polymer film by reacting a monomer gas with a substrate held by a holding member in a processing chamber. The apparatus is characterized in that the holding member is composed of a linear member, and the surface for supporting the substrate by point contact is covered with a film made of the same organic polymer as the film.
The film forming apparatus according to claim 2 is the film forming apparatus according to claim 1, wherein the film covering the holding member has a thickness of 1 μm or more.
A film forming apparatus according to a third aspect is the film forming apparatus according to the first or second aspect, wherein the holding member erects and holds a plurality of the substrates adjacent to each other.
The film forming apparatus according to claim 4 is characterized in that, in the film forming apparatus according to claim 1 or 2, the linear member constituting the holding member has a circular cross section, and the substrate is supported by point contact. To do.
The film forming apparatus according to claim 5 is the film forming apparatus according to any one of claims 1 to 3, wherein the organic polymer is polyimide.
Moreover, the formation method of the organic polymer membrane | film | coat of this invention is the said polymer polymer membrane | film | coat on the said board | substrate using the membrane | film | coat formation apparatus in any one of Claims 1 thru | or 5. It is characterized by forming.

本発明によれば、保持部材から生じる粉塵を低減乃至はなくすことにより、粉塵が基板に付着して、この粉塵を核として皮膜形成過程において基板に形成される異常突起の発生を防ぐことができる。また、基板を保持部材から取り外す際に、基板に形成された皮膜を剥離させることがない。また、基板を傷つけることがない。   According to the present invention, by reducing or eliminating dust generated from the holding member, dust adheres to the substrate, and generation of abnormal protrusions formed on the substrate in the film formation process using the dust as a nucleus can be prevented. . In addition, when the substrate is removed from the holding member, the film formed on the substrate is not peeled off. Further, the substrate is not damaged.

本発明は、保持部材により保持された基板に対して、モノマーガスを反応させて皮膜を形成することができる構成の皮膜形成装置について広く利用することができ、例えば、真空蒸着重合を行う場合には、内部の空気を外部に排出して真空にすることができる処理室と、モノマーをガス化することができるガス発生器と、ガス発生器でガス化されたモノマーガスを処理室に導く導入管と、処理室内に基材を保持するための保持部材とを備える構成とすることができる。尚、基板への皮膜形成方法としては、プラズマ重合法や蒸着重合法等の重合法を利用できる。
導入されるモノマーガスについては、モノマーガスを反応させて基板に皮膜を形成することができるものであれば制限するものではない。例えば、基板にポリイミド皮膜を形成する場合であれば、モノマーガスの組み合わせとして、無水ピロメリト酸(PMDA)と、4,4'−オキシジアニリン(ODA)との組み合わせ、或いは、PMDAと3,5’−ジアミノ安息香酸(DBA)との組み合わせ等が挙げられる。
INDUSTRIAL APPLICABILITY The present invention can be widely used for a film forming apparatus having a configuration capable of forming a film by reacting a monomer gas with a substrate held by a holding member. For example, when performing vacuum deposition polymerization Is a processing chamber that can exhaust the internal air to the outside and make it vacuum, a gas generator that can gasify the monomer, and an introduction that introduces the monomer gas gasified by the gas generator to the processing chamber It can be set as the structure provided with a pipe | tube and the holding member for hold | maintaining a base material in a process chamber. As a method for forming a film on the substrate, a polymerization method such as a plasma polymerization method or a vapor deposition polymerization method can be used.
The monomer gas to be introduced is not limited as long as the monomer gas can be reacted to form a film on the substrate. For example, when a polyimide film is formed on a substrate, as a combination of monomer gas, a combination of pyromellitic anhydride (PMDA) and 4,4′-oxydianiline (ODA), or PMDA and 3,5 Examples thereof include a combination with '-diaminobenzoic acid (DBA).

前記基板を保持するための保持部材は、有機高分子皮膜により被覆される。
前記有機高分子皮膜としては、例えば、ポリイミド、ポリアミド、ポリ尿素、ポリウレタン等があり、この皮膜を、真空装置を用いた蒸着重合法や物理的蒸着法、或いは、化学的気相成長法等により形成する。
また、有機高分子被膜により被覆される部位は、少なくとも、保持部材が基材と接触する部位及び基材表面に対向する部位とする。尚、基板表面に対向する部位を被覆するのは、保持部材が基板表面から離れていても、基板近傍に生じる気流によって粉塵が保持部材から基板表面に付着することがあるためである。
The holding member for holding the substrate is covered with an organic polymer film.
Examples of the organic polymer film include polyimide, polyamide, polyurea, polyurethane, and the like, and this film is formed by a vapor deposition polymerization method using a vacuum apparatus, a physical vapor deposition method, a chemical vapor deposition method, or the like. Form.
Further, the portion covered with the organic polymer film is at least a portion where the holding member is in contact with the substrate and a portion facing the substrate surface. The reason for covering the portion facing the substrate surface is that even if the holding member is separated from the substrate surface, dust may adhere to the substrate surface from the holding member due to the airflow generated in the vicinity of the substrate.

保持部材の構造については、少なくとも皮膜形成中に基板を保持できる構造のものであれば特に制限はないが、処理室内において、基板を立設した状態で保持できる構造とすることが好ましい。基板の表裏面に形成される皮膜の膜厚を均一にすることができるからである。尚、前記立設した状態とは、本明細書においては、基板の表裏面に反応させたガスが接触する状態までを含むものとする。
また、複数の基板を隣接して立設した状態で保持できる構造とすることが好ましい。複数の基板に同時に皮膜を形成することができるからである。尚、基板を隣接させる方法としては、例えば、複数の基板が平行に所定の間隔をおいて整列して配置させる方法等がある。更に、保持部材の構造は、基板を点接触により支持して保持できる構造とすることが好ましい。基板と保持部材との接触部分が少なくなるので、この接合部分に形成される皮膜が少なくなり、基材を保持部材から取り外す際に、基材に形成された皮膜の剥離を防ぐことができるためである。
また、保持部材を構成する材料についても特に制限はないが、金属又はセラミックスから構成することが好ましい。
The structure of the holding member is not particularly limited as long as it can hold the substrate at least during film formation, but it is preferable to have a structure that can hold the substrate upright in the processing chamber. This is because the film thickness of the film formed on the front and back surfaces of the substrate can be made uniform. In addition, in this specification, the said standing state includes even the state which the gas made to react on the front and back of a board | substrate contacts.
In addition, it is preferable to have a structure in which a plurality of substrates can be held adjacently. This is because a film can be formed on a plurality of substrates simultaneously. As a method for making the substrates adjacent to each other, for example, there is a method in which a plurality of substrates are arranged in parallel with a predetermined interval. Furthermore, the structure of the holding member is preferably a structure that can support and hold the substrate by point contact. Since the contact portion between the substrate and the holding member is reduced, the coating film formed on the joining portion is reduced, and when the base material is removed from the holding member, peeling of the coating film formed on the base material can be prevented. It is.
Moreover, although there is no restriction | limiting in particular also about the material which comprises a holding member, It is preferable to comprise from a metal or ceramics.

次に、本発明の実施の一形態の皮膜形成装置について図面を参照して説明する。
図1は、ポリイミド皮膜を形成するための皮膜形成装置1の略断面図である。
皮膜形成装置1は、処理室2を備え、処理室2には、ガス導入バルブ(図示せず)を介してモノマーガスを導入する一対の第1ガス導入口3及び第2ガス導入口4と、排気バルブ(図示しない)を介して、排気作動を行うための油拡散ポンプ(図示しない)に連通する真空排気口5とが設けられている。また、保持部材6は、処理室2内の架台11上に設けられており、円板形状の基板7を保持している。また、皮膜形成装置1には、内部の温度を制御できる温度制御手段8が設けられており、蒸着重合反応に必要な熱を供給できるように構成されている。
保持部材6は、有機高分子皮膜により被覆され、図2に示すように、湾曲凹部6aと、湾曲凹部6aを処理室2内に固定するための脚部6bとから構成され、基板7の両側と底面を支持している。基板7は、保持部材6の湾曲凹部6aの対向する部位間に挟持され、且つ、基板7の角部が湾曲凹部6aと点状に接触して支持できるようになっている。尚、この湾曲凹部6aは、線状部材により構成し、その外径は、最大でも3mm以下とする。
保持部材6を被覆する有機高分子膜としては、例えば、ポリイミド、ポリアミド、ポリ尿素、ポリウレタン等を使用できる。
尚、本発明において保持部材6は、基板7を点接触により保持できる構造であればよく、図2に示す構造以外の変形例を図3に示す。図示する保持部材9は、基板10を立設するために湾曲凹状に形成された基部9aと、基部9aの上方に配置され、基板10の両側を支持するために、基板10の直径方向を処理室2の底面に対して平行乃至傾斜させて構成された環状部9bと、環状部9bを処理室2内に固定するために、環状部9aに設けられた脚部9cとから構成される。
Next, a film forming apparatus according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view of a film forming apparatus 1 for forming a polyimide film.
The film forming apparatus 1 includes a processing chamber 2, and a pair of a first gas inlet 3 and a second gas inlet 4 for introducing a monomer gas into the processing chamber 2 via a gas inlet valve (not shown), A vacuum exhaust port 5 communicating with an oil diffusion pump (not shown) for performing an exhaust operation is provided via an exhaust valve (not shown). The holding member 6 is provided on a gantry 11 in the processing chamber 2 and holds a disk-shaped substrate 7. Further, the film forming apparatus 1 is provided with a temperature control means 8 capable of controlling the internal temperature, and is configured to supply heat necessary for the vapor deposition polymerization reaction.
The holding member 6 is covered with an organic polymer film, and includes a curved recess 6a and leg portions 6b for fixing the curved recess 6a in the processing chamber 2 as shown in FIG. And support the bottom. The board | substrate 7 is clamped between the site | parts where the curved recessed part 6a of the holding member 6 opposes, and the corner | angular part of the board | substrate 7 can contact the curved recessed part 6a in a dot shape, and can be supported. In addition, this curved recessed part 6a is comprised with a linear member, and the outer diameter shall be 3 mm or less at maximum.
Examples of the organic polymer film that covers the holding member 6 include polyimide, polyamide, polyurea, and polyurethane.
In the present invention, the holding member 6 may have any structure that can hold the substrate 7 by point contact, and a modification other than the structure shown in FIG. 2 is shown in FIG. The holding member 9 shown in the figure is disposed above the base portion 9a and a base portion 9a formed in a curved concave shape to stand the substrate 10, and processes the diameter direction of the substrate 10 in order to support both sides of the substrate 10. An annular portion 9b configured to be parallel or inclined with respect to the bottom surface of the chamber 2 and a leg portion 9c provided in the annular portion 9a for fixing the annular portion 9b in the processing chamber 2 are configured.

次に、本発明の実施例について具体的に説明する。
上記図1及び図2を参照して説明した実施の形態の皮膜形成装置1を使用して、アルミナ基板7に皮膜を形成する方法を具体的に説明する。
(実施例1)
真空排気口5に連なる排気バルブ(図示しない)により真空排気を作動させて装置1の内部圧力を10−2Paに減圧し、この圧力状態を保ちながら温度制御手段8により、その内部を200℃に加熱して、この状態を保持する。そして、予め温度制御手段8により、208℃に加熱した気体状態のピロメリト酸二無水物(PMDA)を第1ガス導入口3から導入する一方で、予め温度制御手段8により190℃に加熱した気体状態の4,4'−ジアミノジフェニルエーテル(ODA)を第2ガス導入口4から導入して、基板7の表面で蒸着重合反応を30分に亘って進行させ、基板7の表面に0.5μmの膜厚のポリイミド膜を形成した。尚、保持部材6の表面のポリイミド被膜の厚さは、0.5μmとした。
また、この処理の際に、処理室2内に発生する粒径0.3,0.5,1.0,5.0,10.0μmのダスト発生量を測定した結果を図4に示す。
Next, specific examples of the present invention will be described.
A method of forming a film on the alumina substrate 7 using the film forming apparatus 1 of the embodiment described with reference to FIGS. 1 and 2 will be specifically described.
Example 1
The evacuation is activated by an exhaust valve (not shown) connected to the evacuation port 5 to reduce the internal pressure of the apparatus 1 to 10 −2 Pa, and the temperature is controlled by the temperature control means 8 while maintaining this pressure state. To maintain this state. And, while introducing pyromellitic dianhydride (PMDA) in a gaseous state previously heated to 208 ° C. by the temperature control means 8 from the first gas introduction port 3, the gas previously heated to 190 ° C. by the temperature control means 8 4,4′-diaminodiphenyl ether (ODA) in a state is introduced from the second gas inlet 4, and the vapor deposition polymerization reaction is allowed to proceed for 30 minutes on the surface of the substrate 7. A polyimide film having a thickness was formed. Note that the thickness of the polyimide coating on the surface of the holding member 6 was 0.5 μm.
Further, FIG. 4 shows the result of measuring the amount of dust generated in the processing chamber 2 with a particle size of 0.3, 0.5, 1.0, 5.0, 10.0 μm during this processing.

(実施例2)
次に、処理室2内に発生するダスト量の比較をするために、実施例1の保持部材6の代わりに、ポリイミド被膜の厚さを1.0μmとして、実施例1と同様にアルミナ基板に被膜を形成して、実施例1と同様にしてダスト発生量を測定し、その結果を図4に示す。
(Example 2)
Next, in order to compare the amount of dust generated in the processing chamber 2, instead of the holding member 6 of Example 1, the thickness of the polyimide coating is set to 1.0 μm, and the alumina substrate is formed in the same manner as in Example 1. A film was formed and the amount of dust generated was measured in the same manner as in Example 1. The result is shown in FIG.

また、比較例1として、実施例1の保持部材6の代わりに、ポリイミド被覆されていない保持部材を使用して、実施例1と同様にしてダスト発生量を測定し、その結果を図4に示す。   Further, as Comparative Example 1, instead of the holding member 6 of Example 1, using a holding member not coated with polyimide, the amount of dust generation was measured in the same manner as in Example 1, and the result is shown in FIG. Show.

図4からわかるように、実施例1及び実施例2で処理を行った場合には、比較例1の保持部材で処理を行った場合に比べて発塵量が減少していることがわかった。更に、実施例1よりも実施例2では、ダストの大きさに関係なく発塵量を20%以下にできることがわかった。   As can be seen from FIG. 4, it was found that when the treatment was performed in Example 1 and Example 2, the amount of dust generation was reduced compared to the case where the treatment was performed with the holding member of Comparative Example 1. . Furthermore, in Example 2 rather than Example 1, it turned out that the amount of dust generation can be 20% or less irrespective of the magnitude | size of dust.

本発明は、ウェーハやガラス板等の基板に、プラズマ重合や蒸着重合等の重合法により、有機皮膜を形成する皮膜形成装置及び皮膜形成方法として広く利用することができる。   The present invention can be widely used as a film forming apparatus and a film forming method for forming an organic film on a substrate such as a wafer or a glass plate by a polymerization method such as plasma polymerization or vapor deposition polymerization.

本発明の一実施の形態である皮膜形成装置の説明図Explanatory drawing of the film formation apparatus which is one embodiment of this invention 本発明の一実施の形態である皮膜形成装置の保持部材の説明図Explanatory drawing of the holding member of the film forming apparatus which is one embodiment of this invention 本発明の一実施の形態である皮膜形成装置の保持部材の変形例の説明図Explanatory drawing of the modification of the holding member of the film forming apparatus which is one embodiment of this invention 本実施例における比較試験の結果を示すグラフThe graph which shows the result of the comparative test in a present Example

符号の説明Explanation of symbols

1 皮膜形成装置
2 処理室
3 第1ガス導入口
4 第2ガス導入口
5 真空排気口
6 保持部材
7 基板
8 温度制御手段
9 保持部材
10 基板
11 架台
DESCRIPTION OF SYMBOLS 1 Film formation apparatus 2 Processing chamber 3 1st gas introduction port 4 2nd gas introduction port 5 Vacuum exhaust port 6 Holding member 7 Substrate 8 Temperature control means 9 Holding member 10 Substrate 11 Mounting stand

Claims (6)

処理室内において、保持部材により保持された基板に対して、モノマーガスを反応させて有機高分子皮膜を形成するための皮膜形成装置であって、前記保持部材を線状部材で構成し、前記基板を点接触により支持するその表面を、前記皮膜と同じ有機高分子からなる皮膜により被覆したことを特徴とする皮膜形成装置。 A film forming apparatus for forming an organic polymer film by reacting a monomer gas with a substrate held by a holding member in a processing chamber, wherein the holding member is a linear member, and the substrate A film forming apparatus characterized in that the surface of the film supported by point contact is coated with a film made of the same organic polymer as the film. 前記保持部材を被覆する皮膜を厚み1μm以上としたことを特徴とする請求項1に記載の皮膜形成装置。   The film forming apparatus according to claim 1, wherein the film covering the holding member has a thickness of 1 μm or more. 前記保持部材は、複数の前記基板を立設させ、隣接させて保持することを特徴とする請求項1又は2に記載の皮膜形成装置。     The film forming apparatus according to claim 1, wherein the holding member holds a plurality of the substrates upright and is adjacent to each other. 前記保持部材を構成する線状部材を円形断面とし、前記基板を点接触により支持することを特徴とする請求項1又は2に記載の皮膜形成装置。   The film forming apparatus according to claim 1, wherein the linear member constituting the holding member has a circular cross section and supports the substrate by point contact. 前記有機高分子はポリイミドであることを特徴とする請求項1乃至3のいずれかに記載の皮膜形成装置。   The film forming apparatus according to claim 1, wherein the organic polymer is polyimide. 請求項1乃至5の何れかに記載の皮膜形成装置を使用して、前記基板に前記有機高分子皮膜を形成することを特徴とする有機高分子皮膜の形成方法。   A method for forming an organic polymer film, comprising: forming the organic polymer film on the substrate using the film forming apparatus according to claim 1.
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JP2003003250A (en) * 2001-06-22 2003-01-08 Alps Electric Co Ltd Vacuum deposition polymerization system and method for depositing organic film using the system

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JP2003003250A (en) * 2001-06-22 2003-01-08 Alps Electric Co Ltd Vacuum deposition polymerization system and method for depositing organic film using the system

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