JP4587768B2 - Superconducting device and method of manufacturing superconducting device - Google Patents

Description

  The present invention relates to a superconducting device, and more particularly to a dual mode superconducting device applied to a transmission front end such as a transmission filter and an antenna in the field of mobile communication and broadcasting.

  In recent years, with the spread and development of mobile phones, high-speed and large-capacity transmission technology has become indispensable. Superconductors have a very low surface resistance in the high-frequency region as compared with ordinary good electrical conductors, and therefore can be expected to have low-loss and high-Q resonators and are promising as filters for mobile communication base stations. Has been.

  For example, as shown in FIG. 1C, an RF signal received via an antenna 151 is converted into a band filter (BPF) 152R, a low noise amplifier (LNA) 153, and a down converter (D / C) After passing through 154 and demodulator (DEMOD) 155, baseband processing is performed in the baseband unit 156.

  In the transmission system, the signal processed by the baseband unit 156 passes through a modulator (MOD) 157, an up converter (U / C) 158, a high power amplifier (HPA) 159, and a band filter (BPF) 152T, and then an RF signal. As radiated from the antenna 151.

  When the superconducting filter is applied to the band filter 152R on the receiving side, a transmission loss is small and a steep frequency cutoff characteristic is expected. On the other hand, when applied to the band filter 152T on the transmission side, an effect of removing distortion generated by the high power amplifier 159 can be expected, but a large amount of power is required to transmit a high-frequency signal, miniaturization and good power characteristics. This is the current challenge.

  Conventionally, the hairpin type superconducting pattern 102 shown in FIG. 1A and the straight line type superconducting pattern 102 shown in FIG. 1B have been used as resonator patterns (for example, Patent Document 1). And 2). A superconducting ground film 104 is solidly formed on the back surface of the dielectric substrate 101, and hairpins or linear superconducting patterns 102 and feeders are formed on the front surface side of the dielectric substrate 101.

  In the case of such a microstrip line structure, there is a problem that loss increases especially when high RF power is input on the transmission side. This is because high-frequency waves such as microwaves tend to concentrate on the edge of the conductor, current concentrates on the edge or corner of the microstrip line, and the current density exceeds the critical current density of the superconductor. It is said.

  Therefore, as shown in FIG. 2A, a disk-type pattern with reduced current concentration has been proposed. That is, a disk-type superconducting pattern 112 with few corners and edges is formed on the surface of the dielectric substrate 101 to achieve a high power response as a transmission filter.

  For example, when configured as a TM11 mode resonator as shown in FIG. 2 (b), the current flows uniformly in an arc symmetric with respect to the disk diameter. The magnetic field is directed in a direction orthogonal to the current.

  However, a multistage filter or an array antenna in which a large number of such disk resonators are arranged has a drawback that the size is increased.

Therefore, as shown in FIG. 3, by providing a notch 125 in a part of the circumference of the disk-type superconducting pattern 122, the resonance frequency is separated by solving the degeneration of the electromagnetic field modes orthogonal to each other. A pattern that functions as is used. Two resonances are generated on the low frequency f1 side (current flow is in the A direction) and the high frequency f2 side (current flow is in the B direction) across the center frequency f0.
JP 2001-308603 A Japanese Patent Laid-Open No. 3-19479

  However, since the notch 125 is provided, as shown in FIG. 3, the current on the low frequency f1 side is concentrated on the corner portion of the notch and exceeds the maximum current density of the basic disk resonator without the notch. In the current density distribution diagram of FIG. 3, the region where the current density is high is a portion indicated by an arrow, and in particular, the bottom and corner portions of the U-shaped notch are high. On the contrary, the shaded portion along the circumference of the circular superconducting pattern is a portion where the current concentration is low. The frequencies f1 and f2 are out of phase by 45 ° at the maximum current density.

  As described above, as a result of current concentration at the corners and edges of the notch, in a bandpass filter or antenna using a superconducting resonator, a reduction in power resistance (allowable power) or an increase in distortion occurs.

  Therefore, an object of the present invention is to provide a superconducting device with improved power handling characteristics and reduced distortion. Such a superconducting device is suitably used for a transmission filter or an antenna.

  In order to solve the above problems, the present invention provides a conductor so as to generate a coupling corresponding to a desired bandwidth above a two-dimensional circuit type superconducting resonator pattern such as a circle, an ellipse, or a polygon. Arrange the pattern. The conductor pattern is preferably circular or elliptical.

  Depending on the size and position of the conductor pattern and the dielectric constant of the dielectric between the conductor pattern and the superconducting resonator pattern, the degree of interference between the center frequency and the electromagnetic field modes (coupling), that is, the bandwidth changes. The larger the conductor pattern, the more the current concentration can be reduced. However, the mode coupling changes and ripple in the passband increases, so the diameter of the circular conductor pattern or the major axis of the elliptical conductor pattern is effective. It is desirable that it is ¼ (λ / 4) or less of the wavelength.

Specifically, in one aspect of the present invention, a first dielectric substrate, a two-dimensional circuit type resonator pattern formed of a superconducting material on the first dielectric substrate, and the resonator pattern of located above, anda conductor pattern to produce a coupling of desired bandwidth to the resonator pattern, wherein the conductor pattern is a circular or elliptical, the diameter of the circular conductor pattern, or major axis of the elliptical conductor pattern state, and are less than 1/4 of the effective wavelength lambda, comprising a dielectric between the resonator pattern and the conductive pattern, the dielectric, the first dielectric A second dielectric substrate stacked on the body substrate, wherein the first dielectric substrate and the second dielectric substrate each have an alignment mark; thickness, Ru 0.1~1mm der.
In another aspect of the present invention, a first dielectric substrate, a two-dimensional circuit type resonator pattern formed of a superconducting material on the first dielectric substrate, and an upper portion of the resonator pattern. And a conductor pattern that causes coupling of the resonator pattern to a desired bandwidth, and the conductor pattern is circular or elliptical, the diameter of the circular conductor pattern, or the The major axis of the elliptical conductor pattern is ¼ or less of the effective wavelength λ, and a dielectric is provided between the conductor pattern and the resonator pattern, and the dielectric is formed on the first dielectric substrate. And the first dielectric substrate and the second dielectric substrate each have an alignment mark, and the conductor pattern is the second dielectric substrate. An adhesion layer of Cr or Ti on the substrate Via located.
In another aspect of the present invention, a step of forming a resonator pattern of a predetermined shape with a superconducting material on the first dielectric substrate, and a conductor of a predetermined shape on the second dielectric substrate Forming a pattern; and mounting the second dielectric substrate on the first dielectric substrate such that the conductor pattern causes coupling of a desired bandwidth to the resonator pattern; including.

  Conventionally, the notch shape formed in the resonator pattern is eliminated, and a conductor pattern having a predetermined shape is disposed above the resonator pattern via a dielectric, thereby functioning as a dual mode filter. At the same time, current concentration can be prevented and power characteristics and frequency characteristics can be maintained well.

  Here, the two-dimensional circuit type means not a line-shaped circuit pattern such as a hairpin type or a microstrip type, but a planar figure shape such as a circle, an ellipse, or a polygon.

  In a preferred embodiment, a dielectric is provided between the conductor pattern and the resonator pattern.

  Preferably, the conductor pattern is circular or elliptical, and its diameter (major axis in the case of an elliptical shape) is 1/4 or less of the effective wavelength λ.

  The dielectric located between the conductor pattern and the resonator pattern is, for example, a second dielectric substrate that is stacked on the first dielectric substrate. In this case, the conductor pattern is formed on the surface of the second dielectric substrate.

  The conductor pattern is preferably formed of a superconducting material in order to reduce loss.

  The first dielectric substrate has a dielectric constant of 8 to 11 in a frequency band of 3 to 5 GHz, for example.

  The superconducting device described above further includes a ground film formed on the back surface of the first dielectric substrate and signal input / output lines extending toward the resonator pattern, and the resonator patterns are orthogonal to each other in the 4 GHz band. Two resonances are generated.

  Such a configuration realizes a superconducting device that operates in two resonance modes in a high-frequency region while preventing concentration of current density.

  In a superconducting device having a two-dimensional circuit type superconducting resonator pattern, current concentration on the edge portion can be prevented, and distortion can be reduced and power characteristics can be maintained well, particularly on the high power transmission side.

  In addition, when two resonance modes are generated by one superconducting device and applied to a multistage filter or the like, the apparatus can be reduced in size.

  A preferred embodiment of the present invention will be described with reference to FIGS.

  FIG. 4 is a schematic view of a superconducting device according to an embodiment of the present invention, and FIG. 5 is a metal package for using the superconducting device of FIG. 4 in a transmission superconducting filter of a base station of a mobile communication system. It is the schematic which shows a mode that it did.

  The superconducting device includes a dielectric substrate 11 such as an MgO single crystal substrate, a superconducting resonator pattern 12 formed on the surface of the MgO dielectric substrate 11 with a superconducting material in a predetermined shape, and a superconducting resonator pattern 12. A signal input / output line (feeder) 13 extending in the vicinity of the metal electrode 15, a metal electrode 15 provided at the end of the feeder 13 for joining an external connector, and a ground electrode (on the back surface of the MgO dielectric substrate 11) (Ground film) 14, a second dielectric substrate 16 laminated on the dielectric substrate 11, and a circular or elliptical conductor pattern 17 formed on the laminated dielectric substrate 16.

  In the example of FIG. 4, a YBCO (Y-Ba-Cu-O-based) material is used as a superconductive material, and the superconductive resonator pattern 12 is formed as a circular two-dimensional circuit pattern (disk pattern).

  In the present specification and claims, the term “two-dimensional circuit pattern” or “two-dimensional circuit type pattern” is distinguished from a line (one-dimensional) pattern, and is circular, elliptical, or polygonal. A planar circuit pattern such as

  As the base dielectric substrate 11, any dielectric substrate having a dielectric constant of 8 to 10 at a frequency of 3 to 5 GHz can be used other than the MgO single crystal substrate.

  One of the feeders 13 extending from the signal input / output electrode 15 toward the superconducting resonator pattern 12 is used as a signal input, and the other is used as a signal output.

  The laminated dielectric substrate 16 desirably has a relatively high dielectric constant and low dielectric loss. For example, MgO, LaAlO3, sapphire, CeO2, TiO2, etc. can be used. By using a material having a dielectric constant larger than that of the base dielectric substrate 11, the effective dielectric constant is increased, and the resonance frequency of the superconducting pattern is shifted to the lower frequency side. In order to return to the original resonance frequency, it is necessary to reduce the superconducting resonator pattern, and as a result, it is possible to contribute to miniaturization of the superconducting device. The size of the laminated dielectric substrate 16 is preferably the same as that of the base dielectric substrate 11.

  In FIG. 5, a two-dimensional circuit type superconducting device is mounted on a metal package 30 having a surface plated with gold, and a top plate (not shown) is attached. An input / output connector 31 is fixed to the metal package 30, and the electrode 15 connected to the end of the feeder 13 and the central conductor of the input / output connector 31 are electrically joined. For the electrical joining, any method such as a wire method, a tape method, or a solder method can be adopted. The ground electrode 14 made of a solid film on the back surface of the MgO dielectric substrate 11 improves the electrical connection with the metal package 30. The dielectric substrate 11 and the laminated dielectric substrate 16 are mounted on the metal package 30 by the pressing spring 32.

  4 and 5, the resonator pattern 12 and the conductor pattern 17 may be in direct contact with each other, but further improvement in characteristics can be expected when a dielectric is interposed therebetween. As the dielectric, a substrate having a high dielectric constant is used, but the air layer may be a dielectric. In this case, the conductor pattern 17 is formed on the surface of the lid portion (not shown) of the metal package 30 facing the dielectric substrate 11, or the second dielectric substrate having the conductor pattern 17 formed on the bottom surface is formed. It is possible to adopt a configuration such as holding the dielectric substrate 11 so as to face the base dielectric layer through an air layer.

  FIG. 6 is a top view of the superconducting device of FIG. As an example of the positional relationship between the superconducting resonator pattern 12 and the conductor pattern 17, the conductor pattern 17 is provided at a position substantially symmetrical to the two feeders with respect to the center of the resonator pattern. The conductor pattern 17 is circular or elliptical, and its diameter (the major axis in the case of an elliptical shape) is ¼ (λ / 4) or less of the effective wavelength. As the diameter of the conductor pattern 17 is increased, current concentration can be reduced. However, if the diameter is too large, coupling between the modes of the disk resonance becomes strong, and ripple in the passband increases. Furthermore, the conductor pattern itself generates a resonance mode, which disturbs the original disk resonance mode. For this reason, the diameter of the conductor pattern (the major axis in the case of an ellipse) is ¼ or less of the effective wavelength.

  Further, depending on the position of the conductor pattern 17, the center frequency and the degree of interference between the electromagnetic field modes (coupling), that is, the bandwidth varies. For example, as shown by the arrow A, when the conductor pattern 17 moves away from the resonance pattern, the coupling becomes stronger and the bandwidth increases. When entering the direction opposite to the arrow, that is, inside the resonator pattern 12, the coupling is weak and the bandwidth is narrowed. In order to generate the dual mode, a desired coupling can be generated by appropriately setting the position of the conductor pattern 17 so that the conductor pattern 17 and the resonator pattern 12 are not concentric.

  In order to manufacture such a superconducting device, for example, a YBCO (Y-Ba-Cu-O-based) thin film is formed on both surfaces of a 20 × 20 × 0.5 mm MgO single crystal substrate 11 by using a laser deposition method. To do. The thickness of the YBCO thin film is appropriately selected according to the filter characteristics, and is, for example, 0.5 μm. The YBCO thin film on one side is patterned by a photolithography technique to form a disk-type resonator pattern 12 and a feeder 13. The diameter of the disk type resonator pattern 12 is about 12.8 mm when LaAlO 3 is used for the laminated dielectric 16 mounted on the upper side. A metal electrode 15 is formed at the end of the feeder 13. The YBCO film on the other surface of the MgO single crystal substrate 11 is left as a solid film and used as a ground electrode 14.

  The laminated dielectric substrate 16 is, for example, an 18 × 18 × 0.5 mm LaAlO 3 single crystal substrate. A conductor pattern 17 is formed on one side of the LaAlO 3 single crystal substrate 16 by using a lift-off method. The conductor pattern can also be formed by forming a solid conductor film on one side in advance and performing photolithography and etching.

  In order to reduce the surface resistance, the thickness of the conductor pattern 17 is set to a film thickness equal to or greater than the skin length when a metal material is used, and to a film thickness equal to or greater than the magnetic penetration length when a superconductive material is used. In the case of a metal film, it is formed by vacuum deposition or sputtering. In the case of a superconducting film, it is formed by laser vapor deposition, sputtering, MBE, or the like. In the case of using a metal film, in order to obtain good adhesion to the laminated dielectric substrate 16, a conductor pattern 17 containing any one of Ag, Cu, and Au is provided through a Cr or Ti adhesion layer (not shown). It will be formed. In this case, the adhesion layer has a surface resistance larger than that of the upper conductor layer, so the thickness of the adhesion layer is 0.1 μm or less. When a superconducting film is used, it is desirable that the film be formed under the same conditions as those for the resonator disk pattern 12 to match the characteristics.

  These are mounted on the metal package 30 to complete the resonator. At this time, as indicated by cross marks in FIG. 6, alignment marks 18 are provided on the dielectric substrate 11 and the laminated dielectric substrate 16. By forming the alignment marks 18 at the four corners, the influence on the resonator, the conductor, and the feeder can be minimized. In the case of a superconducting film, the alignment mark 18 is formed by an etching method simultaneously with the formation of the resonator pattern 12, the conductor pattern 17, and the feeder 13. In the case of a metal film, it is formed on the dielectric substrate 11 by a lift-off method and on the laminated dielectric substrate 16 by a lift-off method or an etching method.

  The superconducting device illustrated in FIGS. 4 to 6 can be applied to, for example, fourth-generation mobile communication, and can employ a configuration having two resonances in directions orthogonal to each other in the 4 GHz band. When there is no conductor pattern 17, the resonators are in one mode that are completely orthogonal to each other. However, by providing the conductor pattern 17 above the superconducting resonator pattern 12, the orthogonality is partially broken and coupled to each other. A mode occurs. However, the case where the conductor pattern 17 and the resonator pattern 12 are in a concentric positional relationship is excluded. When the conductor pattern 17 is symmetrical with respect to the xy axis, such as an ellipse or a rectangle, the dual mode is generated even if the center coincides with the center of the resonator pattern 12. The shape of the conductor pattern 17 is preferably circular or elliptical for the purpose of further reducing current density concentration.

  FIG. 7 is a diagram showing a reduction effect of current density concentration when using the superconducting device according to the embodiment of the present invention. At any of the low frequency side f1, the center frequency f0, and the high frequency side f2, there is almost no current density concentration. In the figure, shaded portions of the resonator pattern and the conductor pattern are portions having a relatively low current density. It can be seen that the concentration of current density is greatly reduced as compared with the conventional superconducting resonator pattern having a rectangular notch in FIG. 3 (the upper part is covered with a dielectric).

  FIG. 8 is a graph showing the current density concentration reduction effect and frequency characteristics of the superconducting device according to the embodiment of the present invention. As a reduction effect of current density concentration, the maximum current density of the superconducting device of the present embodiment having a rectangular conductor pattern on a superconducting resonator pattern via a dielectric and a rectangular notch (normally cut) superconducting device, Shown as a function of frequency. The maximum current density of the conventional normal cut is plotted with a white square, and the maximum current density of the superconducting device of this embodiment having a circular conductor pattern is plotted with a black square. In addition, as a frequency characteristic of the superconducting device according to the embodiment of the present invention, an input reflection characteristic (S11) and a transmission characteristic (S21) are shown.

  As is apparent from the graph, it is understood that the maximum current density is significantly reduced by providing the circular conductor pattern as compared with the normal rectangular cut. In addition, as shown by the S11 characteristic, in the 4 GHz band, two resonance drops clearly exist, and a good frequency characteristic as a dual mode filter or a two-stage filter is shown.

  FIG. 9 and FIG. 10 are graphs respectively showing improvement in power characteristics and improvement in distortion characteristics of the superconducting device according to the embodiment of the present invention. In order to measure the power characteristic and the distortion characteristic, a resonator sample having a circular conductor pattern as shown in FIG. 5 was prepared and mounted in a metal dewar. The dewar was filled with helium gas and cooled and heated in a temperature range of 70-80K. The measurement of the resonance curve at each temperature is as shown in the frequency characteristics of FIG. Under the same conditions, input / output power was measured in order to measure power durability as RF power characteristics. Further, in order to measure distortion characteristics, two waves adjacent to 1 MHz were added, and third-order intermodulation distortion (IMD3) caused by the nonlinear response of the resonator was measured.

It can be seen that the permissible power IP value indicating the power durability of FIG. 9 is significantly improved as compared with the conventional superconducting pattern having a rectangular notch.
Further, in the measurement of 10 three-dimensional intermodulation distortion (IMD3), it can be confirmed that the third-order intermodulation distortion is greatly improved as compared with the conventional superconducting pattern having a rectangular notch.

  As described above, according to the present invention, a superconducting device with improved power resistance (allowable power) and reduced distortion is realized. Such a superconducting device is well applied to a transmitting resonator, a filter, and an antenna, and can provide a high-performance transmission / reception front end in the mobile communication and broadcasting fields.

  Although the present invention has been described based on specific embodiments, the present invention is not limited to these examples.

  For example, in the embodiment, a YBCO thin film is used as the superconducting material, but any oxide superconducting material can be used. For example, an RBCO (R—Ba—Cu—O) -based thin film, that is, a superconducting material using Nd, Sm, Gd, Dy, and Ho instead of Y (yttrium) as the R element may be used. Also, BSCCO (Bi-Sr-Ca-Cu-O) system, PBSCCO (Pb-Bi-Sr-Ca-Cu-O) system, CBCCO (Cu-Bap-Caq-Cur-Ox, 1.5 <p <2.5, 2.5 <q <3.5, 3.5 <r <4.5) may be used for the superconducting material.

  The base dielectric substrate 11 is not limited to an MgO single crystal substrate, and for example, a LaAlO 3 substrate, a sapphire substrate, or the like may be used.

Finally, the following notes are disclosed regarding the above description.
(Appendix 1) a first dielectric substrate;
A two-dimensional circuit type resonator pattern formed of a superconducting material on the first dielectric substrate;
A superconducting device having a conductor pattern located above the resonator pattern and causing coupling of a desired bandwidth to the resonator pattern.
(Supplementary note 2) The superconducting device according to supplementary note 1, wherein a dielectric is provided between the conductor pattern and the resonator pattern.
(Supplementary note 3) The superconducting device according to Supplementary note 1 or 2, wherein the conductor pattern is circular or elliptical.
(Supplementary note 4) The superconducting device according to supplementary note 3, wherein a diameter of the conductor pattern or a major axis of the elliptical conductor pattern is ¼ or less of an effective wavelength λ.
(Additional remark 5) The said conductor pattern is formed with an oxide superconductive material, The superconducting device in any one of Additional remark 1-4 characterized by the above-mentioned.
(Supplementary note 6) The superconducting device according to any one of Supplementary notes 1 to 5, wherein the conductor pattern includes one of Ag, Cu, and Au.
(Supplementary note 7) The superconducting device according to any one of supplementary notes 1 to 6, wherein the conductor pattern has a film thickness equal to or greater than a skin length or a magnetic penetration length.
(Supplementary Note 8) The dielectric is a second dielectric substrate stacked on the first dielectric substrate, and the first dielectric substrate and the second dielectric substrate are respectively positioned. The superconducting device according to appendix 2, which has an alignment mark.
(Supplementary note 9) The superconducting device according to supplementary note 8, wherein the second dielectric substrate is any one of MgO, LaAlO3, sapphire, CeO2, and TiO2.
(Supplementary note 10) The superconducting device according to Supplementary note 8 or 9, wherein the thickness of the second dielectric substrate is 0.1 to 1 mm.
(Supplementary note 11) The superconducting device according to any one of Supplementary notes 8 to 10, wherein the conductor pattern is located on the second dielectric substrate via an adhesion layer of Cr or Ti.
(Additional remark 12) The thickness of the said contact | adherence layer is 0.1 micrometer or less, The superconducting device of Additional remark 11 characterized by the above-mentioned.
(Supplementary note 13) The superconducting device according to supplementary note 1, wherein the first dielectric substrate has a dielectric constant of 9 to 11 in a frequency band of 3 to 5 GHz.
(Additional remark 14) It has further a ground film formed in the back surface of the said 1st dielectric substrate, and the signal input / output line extended toward the said resonator pattern, and the said resonator pattern mutually orthogonally crosses in 4 GHz band The superconducting device according to claim 1, wherein two resonances are generated.
(Supplementary note 15) The superconducting device according to supplementary note 1, wherein the superconducting material is an oxide superconducting material.
(Supplementary note 16) The superconducting device according to supplementary note 8, wherein the alignment mark is provided at four corners of the dielectric substrate and the second dielectric substrate.
(Appendix 17) A step of forming a resonator pattern having a predetermined shape with a superconducting material on a first dielectric substrate;
Forming a conductor pattern of a predetermined shape on the second dielectric substrate;
Mounting the second dielectric substrate on the first dielectric substrate such that the conductor pattern causes coupling of the desired bandwidth to the resonator pattern. Method.
(Appendix 18)
The superconducting device according to claim 17, wherein the conductor pattern forming step includes a step of forming an alignment mark together with the predetermined conductor pattern on the second dielectric substrate by a lift-off method. Method.

It is a figure for demonstrating the conventional superconducting filter device applied to a mobile communication system. It is a figure of the resonator which has the conventional disc type superconducting pattern. It is a figure which shows the concentration of the current density in the conventional notched disk type | mold superconducting resonator pattern. It is a schematic block diagram of the superconducting device which concerns on one Embodiment of this invention. It is a schematic block diagram which shows the state which mounted the superconducting device of FIG. 4 in the metal package. It is the figure which looked at the superconducting device of Drawing 4 from the upper part, and is a figure showing the positional relationship of a superconducting resonator pattern and a conductor pattern. It is a figure which shows the reduction effect of the current density concentration of the superconducting device of this invention. It is a graph which shows the reduction effect and frequency characteristic of the current density concentration of the superconducting device of this invention. It is a graph which shows the electric power characteristic of the superconducting device of this invention. It is a graph which shows the distortion characteristic of the superconducting device of this invention.

Explanation of symbols

10 Superconducting filter 11 Dielectric substrate 12 Superconducting pattern (resonator pattern)
13 Feeder (signal input / output line)
14 Ground film 15 Electrode 16 Multilayer dielectric (second dielectric substrate)
17 Conductor pattern 18 Alignment mark 30 Metal package 31 Input / output connector 32 Holding spring

Claims (7)

A first dielectric substrate;
A two-dimensional circuit type resonator pattern formed of a superconducting material on the first dielectric substrate;
A conductor pattern located above the resonator pattern and causing coupling of a desired bandwidth to the resonator pattern; and
The conductor pattern is circular or elliptical,
The diameter of the circular conductor pattern or the major axis of the elliptical conductor pattern is ¼ or less of the effective wavelength λ.
Having a dielectric between the conductor pattern and the resonator pattern;
The dielectric is a second dielectric substrate stacked on the resonator pattern formed on the first dielectric substrate, and the conductor pattern is formed on the second dielectric substrate. and which, with the first dielectric substrate, said second dielectric substrate each have an alignment mark,
A thickness of the second dielectric substrate is 0.1 to 1 mm. A first dielectric substrate;
A two-dimensional circuit type resonator pattern formed of a superconducting material on the first dielectric substrate;
A conductor pattern located above the resonator pattern and causing coupling of a desired bandwidth to the resonator pattern; and
The conductor pattern is circular or elliptical,
The diameter of the circular conductor pattern or the major axis of the elliptical conductor pattern is ¼ or less of the effective wavelength λ.
Having a dielectric between the conductor pattern and the resonator pattern;
The dielectric is a second dielectric substrate stacked on the resonator pattern formed on the first dielectric substrate, and the conductor pattern is formed on the second dielectric. cage, said first dielectric substrate, said second dielectric substrate each have an alignment mark,
The superconducting device, wherein the conductor pattern is located on the second dielectric substrate via an adhesion layer of Cr or Ti.   The superconducting device according to claim 1, wherein the conductor pattern has a film thickness equal to or greater than a skin length or a magnetic penetration length. Forming a resonator pattern of a predetermined shape with a superconducting material on a first dielectric substrate;
Forming a conductor pattern of a predetermined shape on the second dielectric substrate;
As the conductor pattern causes a coupling of desired bandwidth to the resonator pattern, to the resonator pattern on the first dielectric substrate, said second dielectric substrate is the conductor pattern forming Mounting so that the formed surface becomes the upper surface .   5. The superconducting device according to claim 4, wherein the conductor pattern forming step includes a step of forming an alignment mark together with the predetermined conductor pattern on the second dielectric substrate by a lift-off method. Production method.   6. The method of manufacturing a superconducting device according to claim 5, wherein the alignment marks are provided at four corners of the first dielectric substrate and the second dielectric substrate.   7. The superconducting device according to claim 4, wherein the conductor pattern is formed on the second dielectric substrate via an adhesion layer of Cr or Ti. Production method.