JP4583086B2 - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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JP4583086B2
JP4583086B2 JP2004188946A JP2004188946A JP4583086B2 JP 4583086 B2 JP4583086 B2 JP 4583086B2 JP 2004188946 A JP2004188946 A JP 2004188946A JP 2004188946 A JP2004188946 A JP 2004188946A JP 4583086 B2 JP4583086 B2 JP 4583086B2
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bonding material
optical semiconductor
semiconductor device
semiconductor element
insulating base
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JP2006013175A (en
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剛 長谷川
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Description

本発明は、フォトダイオード、ラインセンサ、イメージセンサ等の受光素子である光半導体素子またはこれらの受光部を有する光半導体素子を具備した光半導体装置に関する。   The present invention relates to an optical semiconductor device including an optical semiconductor element that is a light receiving element such as a photodiode, a line sensor, or an image sensor, or an optical semiconductor element having these light receiving portions.

従来のフォトダイオード（ＰＤ）、ラインセンサ、イメージセンサ等の受光素子である光半導体素子またはこれらの受光部を有する光半導体素子を具備した光半導体装置を構成する絶縁基体は、上面に光半導体素子を収容するための凹部が形成されている。また、絶縁基体の凹部の内面から絶縁基体の側面および下面の少なくとも一方にかけて配線導体が形成されている。   An insulating substrate constituting an optical semiconductor device that is a light receiving element such as a conventional photodiode (PD), line sensor, image sensor or the like, or an optical semiconductor element having these light receiving portions, has an optical semiconductor element on the upper surface. A recess is formed to accommodate the. In addition, a wiring conductor is formed from the inner surface of the recess of the insulating substrate to at least one of the side surface and the lower surface of the insulating substrate.

光半導体素子は絶縁基体の凹部の底面に載置され接着されており、その光半導体素子の上面の外周部には電極が設けられている。光半導体素子の電極と上記配線導体のうち凹部の内面に露出した部位とは、Ａｕ，Ａｌ等から成るボンディングワイヤにより電気的に接続される。また、透光性蓋体が絶縁基体の上面に、凹部を覆うようにして接合材により取着されている。   The optical semiconductor element is mounted on and adhered to the bottom surface of the recess of the insulating base, and an electrode is provided on the outer peripheral portion of the upper surface of the optical semiconductor element. The electrode of the optical semiconductor element and the portion of the wiring conductor exposed at the inner surface of the recess are electrically connected by a bonding wire made of Au, Al or the like. Moreover, the translucent cover body is attached to the upper surface of the insulating substrate by a bonding material so as to cover the recess.

このように従来の光半導体装置は、透光性蓋体を有することにより、光半導体装置の内部空間にゴミなどの異物が進入することを防止するとともに、光半導体装置の内部空間を密閉空間とすることで、外部雰囲気の湿気が光半導体装置内に進入するのを極力防ぐようにして、光半導体素子の耐久性を向上させるようにしている。   As described above, the conventional optical semiconductor device has the translucent lid to prevent foreign matters such as dust from entering the internal space of the optical semiconductor device, and the internal space of the optical semiconductor device as a sealed space. Thus, the durability of the optical semiconductor element is improved by preventing moisture in the external atmosphere from entering the optical semiconductor device as much as possible.

なお、一般的な光半導体装置では、外部機器との電気的接続を行うために絶縁基体の外周部に外部接続端子が配設されており、その外部接続端子は、絶縁基体の凹部内から絶縁基体の側面および下面の少なくとも一方にかけて形成された配線導体等を介して電極パッドに接続されている。   In general optical semiconductor devices, external connection terminals are provided on the outer peripheral portion of the insulating base for electrical connection with external equipment, and the external connection terminals are insulated from the recesses of the insulating base. The electrode pad is connected via a wiring conductor or the like formed over at least one of the side surface and the lower surface of the substrate.

そして、光半導体素子により透光性蓋体を介して受光されるとともに変換されて生じた電気信号は、配線導体および外部接続端子を経由して光半導体装置の外部に配置された各種の機器や素子などに送られる。   The electrical signals received and converted by the optical semiconductor element through the light-transmitting lid are converted into various types of equipment disposed outside the optical semiconductor device via the wiring conductor and the external connection terminal. Sent to the element.

なお、従来のフォトダイオード（ＰＤ）、ラインセンサ、イメージセンサ等の受光素子である光半導体素子またはこれらの受光部を有する光半導体素子を具備した光半導体装置において、透光性蓋体と絶縁基体との接着における接合材としては、シリカフィラーを混入させたエポキシ樹脂やフェノール樹脂，クレゾール樹脂，粉体カーボンとシリコン樹脂粒子の混合体等の熱硬化性樹脂または紫外線硬化性樹脂を用いたものが使用されている。   Note that, in an optical semiconductor device including an optical semiconductor element that is a light receiving element such as a conventional photodiode (PD), line sensor, or image sensor, or an optical semiconductor element having these light receiving portions, a light-transmitting lid and an insulating substrate As the bonding material for bonding with the resin, there are those using thermosetting resin or ultraviolet curable resin such as epoxy resin mixed with silica filler, phenol resin, cresol resin, mixture of powder carbon and silicon resin particles. in use.

特に、近年、透光性蓋体を絶縁基体に取着する接合材としては、硬化のためにあまり大きな熱を加える必要が無く、光半導体素子に対する熱の影響の小さい、紫外線硬化性樹脂から成るものが多用されるようになってきている。   In particular, in recent years, the bonding material for attaching the translucent lid to the insulating substrate is made of an ultraviolet curable resin that does not require much heat for curing and has a small influence on the optical semiconductor element. Things are becoming more and more used.

また、接合材として紫外線硬化性樹脂から成るものを用いると、熱硬化性樹脂に比べ樹脂の硬化のための処理時間が短縮できるので、光半導体装置を製造する工程の短縮化に有効である。
特開平１０−１１６９４０号公報 Further, when a material made of an ultraviolet curable resin is used as the bonding material, the processing time for curing the resin can be shortened as compared with the thermosetting resin, which is effective for shortening the process of manufacturing the optical semiconductor device.
JP 10-116940 A

しかしながら、従来の光半導体装置においては、透光性蓋体を絶縁基体に取着する接合材が確実に硬化しているか否かを外観的に確認することが難しいという問題があった。例えば、透光性蓋体と絶縁基体とを接合させる接合材が紫外線硬化性樹脂の場合、接合材が確実に硬化して透光性蓋体が絶縁基体に強固に接合、取着されるためには、接合材に対して紫外線が照射されている必要があるが、硬化の前後で樹脂に色調や透明度等の変化が顕著に生じることはなく、また温度もほとんど変わらないので、接合材について紫外線が照射されたものであるか否かを外観的に確認することができない。そのため、接合材が未硬化で光半導体素子が気密封止されていない光半導体装置が誤って流出する危険性があった。   However, the conventional optical semiconductor device has a problem that it is difficult to visually confirm whether or not the bonding material for attaching the translucent lid to the insulating base is reliably cured. For example, when the bonding material for bonding the translucent lid and the insulating substrate is an ultraviolet curable resin, the bonding material is reliably cured, and the translucent lid is firmly bonded and attached to the insulating substrate. However, it is necessary to irradiate the bonding material with ultraviolet rays, but there is no significant change in color tone or transparency in the resin before and after curing, and the temperature does not change much. It cannot be visually confirmed whether or not it has been irradiated with ultraviolet rays. Therefore, there is a risk that an optical semiconductor device in which the bonding material is uncured and the optical semiconductor element is not hermetically sealed will accidentally flow out.

また、この流出を避けるためには、光半導体装置の１個ずつについて、透光性蓋体に機械的に力を加えて透光性蓋体が動くかどうかを確認して接合されているか否かを識別する必要があり、光半導体装置の生産性が非常に低くなってしまうという問題があった。   Further, in order to avoid this outflow, whether or not each of the optical semiconductor devices is bonded after confirming whether or not the translucent lid moves by applying mechanical force to the translucent lid. There is a problem that the productivity of the optical semiconductor device becomes very low.

なお、紫外線が照射されないという事象は、例えば、紫外線照射装置の故障や紫外線の照射位置、照射時間、出力等の設定の間違い等のいわゆる装置トラブルや、光半導体装置を紫外線照射装置に移送するラインにおける移送の不順等のいわゆるライントラブル等に起因して生じる。   In addition, the phenomenon that ultraviolet rays are not irradiated is, for example, so-called device troubles such as failure of the ultraviolet irradiation device, incorrect setting of the ultraviolet irradiation position, irradiation time, output, etc., or a line for transferring the optical semiconductor device to the ultraviolet irradiation device. This is caused by so-called line troubles such as irregular transport.

従って、本発明は上記問題点に鑑みて完成されたものであり、その目的は、絶縁基体と透光性蓋体とを接合する接合材（紫外線硬化性樹脂）に対する紫外線照射が適切に行われ、光半導体素子が確実に気密封止されているか否かを容易かつ確実に識別することができ、気密封止の信頼性が良好に確保されているとともに生産性に優れた光半導体装置を提供することである。   Accordingly, the present invention has been completed in view of the above-described problems, and an object thereof is to appropriately perform ultraviolet irradiation on a bonding material (ultraviolet curable resin) for bonding an insulating base and a light-transmitting lid. Provided is an optical semiconductor device that can easily and reliably identify whether or not the optical semiconductor element is securely hermetically sealed, has good reliability of hermetic sealing, and is excellent in productivity. It is to be.

本発明の半導体装置は、上面に光半導体素子を収容し搭載するための凹部を有する絶縁基体と、該絶縁基体の前記凹部の内側から外側に導出された配線導体と、前記絶縁基体の前記凹部の底面に接合されて搭載されるとともに電極が前記配線導体に電気的に接続された光半導体素子と、前記絶縁基体の上面に前記凹部を塞ぐようにして接合材を介して取着された透光性蓋体とを具備しており、前記接合材は、紫外線硬化性であるとともに紫外線によって変色するメラニン色素を含有しており、該メラニン色素は、前記接合材の露出面側に近い領域における含有量が前記接合材の内側における含有量よりも少ないことを特徴とする。
The semiconductor device of the present invention includes an insulating base having a recess for accommodating and mounting an optical semiconductor element on an upper surface, a wiring conductor led out from the inside of the recess of the insulating base, and the recess of the insulating base An optical semiconductor element mounted on the bottom surface of the substrate and having an electrode electrically connected to the wiring conductor, and a transparent member attached to the upper surface of the insulating base via a bonding material so as to close the recess. And the bonding material contains a melanin pigment that is ultraviolet curable and discolors by ultraviolet rays , and the melanin pigment is in a region near the exposed surface side of the bonding material. The content is less than the content inside the bonding material .

本発明の半導体装置は好ましくは、前記接合材は、紫外線硬化性樹脂から成ることを特徴とする。   In the semiconductor device of the present invention, preferably, the bonding material is made of an ultraviolet curable resin.

また本発明の半導体装置は好ましくは、前記接合材は、前記絶縁基体と前記透光性蓋体との接合部から前記透光性蓋体の下面の内側に向かって延在していることを特徴とする。   In the semiconductor device of the present invention, preferably, the bonding material extends from a bonding portion between the insulating base and the translucent lid toward the inside of the lower surface of the translucent lid. Features.

本発明の半導体装置によれば、絶縁基体の上面に絶縁基体の凹部を塞ぐようにして透光性蓋体を取着するための接合材は、紫外線硬化性であるとともに紫外線によって変色するメラニン色素を含有していることから、接合材を硬化させる紫外線が照射されたときには、その紫外線により接合材に含有されているメラニン色素が変色するため、接合材に対して紫外線照射がされたか否かを容易かつ確実に識別することができる。その結果、光半導体素子が確実に気密封止されているか否かを容易かつ確実に識別することができ、気密封止の信頼性が良好に確保されているとともに、生産性に優れた光半導体装置を提供することができる。また、メラニン色素は、接合材の露出面側に近い領域における含有量が接合材の内側における含有量よりも少ないことから、露出面付近で変色したメラニン色素が紫外線を吸収して内部に照射されにくくなることを抑制し、接合材の内部に十分な量の紫外線が入射して、接合材の全域において硬化が確実に行なわれる。
According to the semiconductor device of the present invention, the bonding material for attaching the translucent lid so as to close the concave portion of the insulating base on the upper surface of the insulating base is an ultraviolet curable and melanin dye that is discolored by the ultraviolet light. Therefore, when the ultraviolet ray that cures the bonding material is irradiated, the melanin pigment contained in the bonding material is discolored by the ultraviolet ray. It can be easily and reliably identified. As a result, it is possible to easily and surely identify whether or not the optical semiconductor element is hermetically sealed, and the optical semiconductor is excellent in productivity while ensuring good reliability of hermetic sealing. An apparatus can be provided. In addition, since the content of the melanin pigment in the region near the exposed surface side of the bonding material is less than the content on the inside of the bonding material, the melanin pigment discolored near the exposed surface absorbs ultraviolet rays and is irradiated inside. It is possible to suppress the difficulty, and a sufficient amount of ultraviolet light is incident on the inside of the bonding material, so that the entire area of the bonding material is reliably cured.

なお、接合材は、硬化を確実とするために硬化の最後の段階で熱硬化されるものであってもよい。即ち、硬化の初期の段階では紫外線照射され、硬化の最後の段階では熱硬化される場合もあるため、紫外線照射のみにより硬化される接合材でなくても、硬化の有無の確認について一定の効果を得ることができる。   The bonding material may be heat-cured at the final stage of curing in order to ensure curing. In other words, ultraviolet rays are irradiated at the initial stage of curing, and heat curing may be performed at the final stage of curing. Can be obtained.

また、本発明の光半導体装置において好ましくは、接合材は、紫外線硬化性樹脂から成ることから、必要な量の紫外線が接合材に照射されたか否かのみに応じて接合材の硬化の度合いが決まるので、接合材（色素）が変色しているか否か、またどの程度変色しているかを見ることにより、接合材が確実に硬化して透光性蓋体が絶縁基体に強固に接合されているか否かをより確実に識別することができる。   In the optical semiconductor device of the present invention, preferably, since the bonding material is made of an ultraviolet curable resin, the degree of curing of the bonding material depends only on whether the bonding material is irradiated with a necessary amount of ultraviolet rays. Therefore, by observing whether or not the bonding material (dye) is discolored and to what extent, the bonding material is surely cured and the translucent lid is firmly bonded to the insulating substrate. It is possible to more reliably identify whether or not there is.

接合材が色素を含有していない紫外線硬化樹脂である場合、透光性蓋体を取着する封止工程における紫外線照射装置のトラブル、その封止ラインにおけるライントラブル等によって、紫外線の照射前と照射済みの製品との識別が困難となるが、本発明においてはそのような問題が生じないため、紫外線照射の済んでいない製品（接合材が未硬化の製品）の流出や紫外線照射の不十分による信頼性の低下した製品が流出することを効果的に防止することができる。   When the bonding material is an ultraviolet curable resin that does not contain a dye, due to troubles in the ultraviolet irradiation device in the sealing process for attaching the translucent lid, line troubles in the sealing line, etc. Although it is difficult to discriminate from the irradiated product, in the present invention, such a problem does not occur, so the outflow of the product that has not been irradiated with ultraviolet rays (the product with the uncured bonding material) and insufficient ultraviolet irradiation. It is possible to effectively prevent a product with reduced reliability from being leaked.

また、本発明の光半導体装置において好ましくは、透光性蓋体と絶縁基体とを接合させる接合材が、絶縁基体と透光性蓋体との接合部から透光性蓋体の下面の内側に向かって延在していることから、絶縁基体と透光性蓋体とを接合材を介して取着し、紫外線を照射した際に接合材に含有された色素が紫外線により変色し、透光性蓋体の下面の内側に向かって延在している部分の接合材も同様に変色するため、透光性蓋体の外周部から光半導体素子の受光部に外光が斜めに入り込むことを効果的に防ぐことができる。また、透光性蓋体の外周部から凹部内に入り込んだ外光が受光部で受光されずに凹部内で乱反射することも効果的に防止できる。その結果、気密封止の信頼性や生産性に優れるとともに、受光特性に優れた光半導体装置を提供することができる。   In the optical semiconductor device of the present invention, it is preferable that the bonding material for bonding the translucent lid and the insulating base to the inside of the lower surface of the translucent lid from the joint between the insulating base and the translucent lid. Therefore, the pigment contained in the bonding material is discolored by the ultraviolet rays when the insulating base and the translucent lid are attached via the bonding material and irradiated with ultraviolet rays. The bonding material in the portion extending toward the inside of the lower surface of the optical lid is also discolored, so that external light enters the light receiving portion of the optical semiconductor element obliquely from the outer periphery of the transparent lid. Can be effectively prevented. In addition, it is possible to effectively prevent external light that has entered the recess from the outer peripheral portion of the translucent lid body from being diffusely reflected in the recess without being received by the light receiving portion. As a result, it is possible to provide an optical semiconductor device that is excellent in reliability and productivity of hermetic sealing and excellent in light receiving characteristics.

本発明の光半導体装置について以下に詳細に説明する。図１は本発明の光半導体装置について実施の形態の例を示す断面図である。図１において、１は絶縁基体、２は配線導体、３は光半導体素子、４は光半導体素子の電極、５は蓋体、６は光半導体素子３を絶縁基体１に接着するための接着剤、７は接合材、８はボンディングワイヤである。これらの絶縁基体１、配線導体２、光半導体素子３、蓋体５、接合材７、ボンディングワイヤ８により、光半導体装置９が主に構成されている。   The optical semiconductor device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of the optical semiconductor device of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is an optical semiconductor element, 4 is an electrode of the optical semiconductor element, 5 is a lid, and 6 is an adhesive for bonding the optical semiconductor element 3 to the insulating substrate 1. , 7 is a bonding material, and 8 is a bonding wire. An optical semiconductor device 9 is mainly composed of the insulating base 1, the wiring conductor 2, the optical semiconductor element 3, the lid 5, the bonding material 7, and the bonding wire 8.

本発明の絶縁基体１の上面に形成された凹部１ａには光半導体素子３が収容され、凹部１ａの底面に接着剤６により接合される。この光半導体素子３の上面には受光部が設けられ、また光半導体素子３の上面の外周部には電源用や信号用等の電極４が設けられている。また、絶縁基体１の上面の凹部１ａの周囲の全周に、接合材７を介して、ガラス，石英，サファイア，透明樹脂等から成る透光性蓋体５が接合され取着されている。   The optical semiconductor element 3 is accommodated in the concave portion 1a formed on the upper surface of the insulating base 1 of the present invention, and is bonded to the bottom surface of the concave portion 1a by the adhesive 6. A light receiving portion is provided on the upper surface of the optical semiconductor element 3, and electrodes 4 for power supply and signals are provided on the outer peripheral portion of the upper surface of the optical semiconductor element 3. Further, a translucent lid 5 made of glass, quartz, sapphire, transparent resin, or the like is bonded and attached to the entire circumference around the recess 1 a on the upper surface of the insulating base 1 via a bonding material 7.

本発明の光半導体装置９を構成する絶縁基体１は、アルミナセラミックス（アルミナ質焼結体），窒化アルミニウムセラミックス，炭化珪素セラミックス，窒化珪素セラミックス，ガラスセラミックス等のセラミックス等からなり、絶縁基体１の底板部の上面の外周部に、別体の枠状の側壁部が設けられているか、または絶縁基体１の底板部と側壁部とは一体的に形成されていてもよい。   The insulating substrate 1 constituting the optical semiconductor device 9 of the present invention is made of ceramics such as alumina ceramics (alumina sintered body), aluminum nitride ceramics, silicon carbide ceramics, silicon nitride ceramics, glass ceramics, etc. A separate frame-shaped side wall portion may be provided on the outer peripheral portion of the upper surface of the bottom plate portion, or the bottom plate portion and the side wall portion of the insulating base 1 may be integrally formed.

絶縁基体１は、例えば、アルミナ質焼結体から成り、底板部と側壁部とが一体焼成して形成されている場合、アルミナ，シリカ等の原料粉末を有機溶剤，樹脂バインダーとともにシート状に成形して複数のセラミックグリーンシート（以下、グリーンシートともいう）を作製するとともに、一部のものを枠状に打ち抜いて枠状のグリーンシートを作製し、その後、枠状のグリーンシートが上層に位置するようにしてグリーンシートを複数積層し、原料粉末の組成に応じて約１３００〜１６００℃の温度で焼成することにより形成される。底板部および側壁部は、１層のグリーンシートで形成されても、複数のグリーンシートが積層されて形成されてもよい。   The insulating substrate 1 is made of, for example, an alumina sintered body, and when the bottom plate portion and the side wall portion are integrally fired, raw powder such as alumina and silica is formed into a sheet shape together with an organic solvent and a resin binder. As a result, a plurality of ceramic green sheets (hereinafter also referred to as green sheets) are produced, and part of them are punched into a frame shape to produce a frame-shaped green sheet. Thereafter, the frame-shaped green sheet is positioned in the upper layer. In this way, a plurality of green sheets are laminated and fired at a temperature of about 1300 to 1600 ° C. according to the composition of the raw material powder. The bottom plate part and the side wall part may be formed of a single green sheet or a plurality of green sheets stacked.

この場合、絶縁基体１は、光半導体装置９を外部電気回路基板（図示せず）等に実装した際に、光半導体素子３の作動、停止にともなう発熱で膨張、収縮するため、光半導体素子３に加わる熱応力を極力小さくして信頼性を高める上で、熱膨張係数が５×１０−６／℃程度と小さく、光半導体素子３との熱膨張係数の差の小さいアルミナを主成分としたセラミックスから成ることが好ましい。 In this case, the insulating substrate 1 expands and contracts due to heat generated when the optical semiconductor element 3 is activated and stopped when the optical semiconductor device 9 is mounted on an external electric circuit board (not shown). In order to enhance the reliability by minimizing the thermal stress applied to 3, the main component is alumina having a small thermal expansion coefficient of about 5 × 10 −6 / ° C. and a small difference in thermal expansion coefficient from the optical semiconductor element 3. It is preferable that it consists of the ceramics.

また、絶縁基体１の凹部１ａの内側から外側に導出するようにして配線導体２が形成されている。配線導体２のうち凹部１ａの内側に露出した部位に光半導体素子３の電極４がボンディングワイヤ８を介して接続され、凹部１ａ外側に導出された露出部分が外部電気回路（図示せず）に半田等（図示せず）を介して接続されることにより、絶縁基体１に搭載された光半導体素子３は、電極４、ボンディングワイヤ８および配線導体２を介して外部電気回路に電気的に接続される。   Further, the wiring conductor 2 is formed so as to be led out from the inside to the outside of the concave portion 1a of the insulating base 1. The electrode 4 of the optical semiconductor element 3 is connected to a portion of the wiring conductor 2 exposed inside the recess 1a via a bonding wire 8, and the exposed portion led out of the recess 1a is connected to an external electric circuit (not shown). By being connected via solder or the like (not shown), the optical semiconductor element 3 mounted on the insulating base 1 is electrically connected to an external electric circuit via the electrode 4, the bonding wire 8 and the wiring conductor 2. Is done.

この配線導体２は、タングステン，モリブデン，銅，銀等のメタライズ導体により形成されている。そして、配線導体２は、例えば絶縁基体１となるグリーンシートに予め所定のスルーホールを形成し、タングステン，モリブデン，銅，銀等の金属ペーストをスルーホールの内面に印刷塗布したり充填しておくことにより形成される。   The wiring conductor 2 is formed of a metallized conductor such as tungsten, molybdenum, copper, or silver. For the wiring conductor 2, for example, a predetermined through hole is formed in advance in a green sheet to be the insulating base 1, and a metal paste such as tungsten, molybdenum, copper, silver or the like is printed on the inner surface of the through hole or filled. Is formed.

また、光半導体素子３は、その上面の中央部に受光部が設けられており、その上面の受光部の周囲である外周部には、電源用や信号用の電極４が設けられている。光半導体素子３は、ＰＤ，ラインセンサ，イメージセンサ，ＣＣＤ（Charge Coupled Deice）、ＥＰＲＯＭ（Erasable and Programmable ＲＯＭ）等の受光素子、またはこれらの受光部を有する光半導体素子などからなる半導体素子である。   In addition, the optical semiconductor element 3 is provided with a light receiving portion at the center of the upper surface thereof, and an electrode 4 for power supply or signal is provided on the outer peripheral portion around the light receiving portion on the upper surface. The optical semiconductor element 3 is a semiconductor element composed of a light receiving element such as a PD, a line sensor, an image sensor, a CCD (Charge Coupled Deice), an EPROM (Erasable and Programmable ROM), or an optical semiconductor element having these light receiving portions. .

この光半導体素子３は凹部１ａの底面に載置され接着剤６によって接合されており、外周部の電極４と、配線導体２の凹部１ａでの露出部分とは、Ａｕ，Ａｌ等からなるボンディングワイヤ８により電気的に接続される。   The optical semiconductor element 3 is placed on the bottom surface of the recess 1a and joined by an adhesive 6. The electrode 4 on the outer periphery and the exposed portion of the wiring conductor 2 at the recess 1a are bonded with Au, Al, or the like. They are electrically connected by wires 8.

接着剤６としては、アクリル樹脂やエポキシ樹脂等の樹脂接着剤やガラス等から成るものを用いることができる。   As the adhesive 6, an adhesive made of a resin adhesive such as an acrylic resin or an epoxy resin, glass, or the like can be used.

なお、ボンディングワイヤ８は、その長さが０．３〜３ｍｍであることが好ましい。０．３ｍｍ未満では、ボンディングワイヤ８が短すぎて十分なループを形成することが難しくなるため、光半導体素子３の電極４と配線導体２とを確実に接続することが難しくなり、接続不良が生じやすくなる。３ｍｍを超えると、ボンディングワイヤ８が長くなりすぎてループが不要に高くなる傾向があり、ボンディングワイヤ８に不要なインダクタンスが発生して高周波信号の伝送性が劣化しやすくなるとともにコスト高となる。   In addition, it is preferable that the length of the bonding wire 8 is 0.3-3 mm. If it is less than 0.3 mm, the bonding wire 8 is too short and it is difficult to form a sufficient loop, so that it is difficult to reliably connect the electrode 4 of the optical semiconductor element 3 and the wiring conductor 2, resulting in poor connection. It tends to occur. If it exceeds 3 mm, the bonding wire 8 tends to be too long and the loop tends to become unnecessarily high. Unnecessary inductance is generated in the bonding wire 8, and high-frequency signal transmission is likely to deteriorate and the cost is increased.

また、光半導体素子３の電極４と配線導体２との接続は、ボンディングワイヤ８により行うものに限らず、いわゆるリボン等の帯状の接続線等を用いてもよい。   Further, the connection between the electrode 4 of the optical semiconductor element 3 and the wiring conductor 2 is not limited to the bonding wire 8, and a strip-shaped connection line such as a so-called ribbon may be used.

また、蓋体５が接合材７を介して絶縁基体１の上面に接合され取着されており、これにより光半導体素子３を搭載し収容した凹部１ａが気密封止される。この接合材７は、エポキシ樹脂，シリコーン樹脂，フェノール樹脂，クレゾール樹脂，ポリエーテルアミド樹脂等の樹脂材料から成る。なお、樹脂材料の中にシリカ粉末やカーボン粉末等の無機フィラー粉末を添加したものでもよい。   Further, the lid 5 is bonded and attached to the upper surface of the insulating substrate 1 via the bonding material 7, whereby the recess 1 a in which the optical semiconductor element 3 is mounted and accommodated is hermetically sealed. The bonding material 7 is made of a resin material such as an epoxy resin, a silicone resin, a phenol resin, a cresol resin, or a polyether amide resin. In addition, what added inorganic filler powders, such as a silica powder and carbon powder, in the resin material may be used.

また、蓋体５の上下面の少なくとも一方に紫外線を遮断するための光学膜を形成してもよい。   Further, an optical film for blocking ultraviolet rays may be formed on at least one of the upper and lower surfaces of the lid 5.

本発明の光半導体装置９は、蓋体５を絶縁基体１の上面に取着している接合材７に紫外線によって変色するメラニン色素を含有させている。これにより、接合材７を硬化させる紫外線が照射されたときには、その紫外線により接合材７に含有されているメラニン色素が変色するため、接合材７に対して紫外線照射がされたか否かをメラニン色素の色を見ること、実際には接合材７の色を見ることにより、容易かつ確実に識別することができる。その結果、光半導体素子３が確実に気密封止されているか否かを容易かつ確実に識別することができ、気密封止の信頼性が良好に確保されているとともに生産性に優れた光半導体装置９を提供することができる。また、メラニン色素は、接合材７の露出面側に近い領域における含有量が接合材７の内側における含有量よりも少ないことから、露出面付近で変色したメラニン色素が紫外線を吸収して内部に照射されにくくなることを抑制し、接合材７の内部に十分な量の紫外線を入射させて、接合材７の全域において硬化が確実に行なわれる。
In the optical semiconductor device 9 of the present invention, the bonding material 7 that attaches the lid 5 to the upper surface of the insulating substrate 1 contains a melanin dye that changes color by ultraviolet rays. Accordingly, when the ultraviolet curing the bonding material 7 is irradiated, since the melanin contained in the bonding material 7 by the ultraviolet radiation is discolored, whether the melanin pigment is ultraviolet irradiated to the bonding material 7 Can be easily and reliably identified by looking at the color of the bonding material 7, in fact, by looking at the color of the bonding material 7. As a result, it is possible to easily and reliably identify whether or not the optical semiconductor element 3 is hermetically sealed, and an optical semiconductor with excellent reliability and hermetic sealing reliability. An apparatus 9 can be provided. Further, since the content of the melanin pigment in the region close to the exposed surface of the bonding material 7 is less than the content of the bonding material 7 on the inner side, the melanin pigment discolored in the vicinity of the exposed surface absorbs ultraviolet rays and absorbs it inside. Curing is reliably performed in the entire area of the bonding material 7 by suppressing the difficulty of being irradiated and allowing a sufficient amount of ultraviolet light to enter the bonding material 7.

なお、接合材７は、硬化を確実とするために硬化の最後の段階で熱硬化されるものであってもよい。即ち、硬化の初期の段階では紫外線照射され、硬化の最後の段階で熱硬化されるものであり、紫外線照射のみにより硬化される接合材でなくてもよい。その場合でも、硬化の有無の確認について一定の効果を得ることができる。   Note that the bonding material 7 may be thermally cured at the final stage of curing in order to ensure curing. That is, it is not necessarily a bonding material that is irradiated with ultraviolet rays at the initial stage of curing and is thermally cured at the final stage of curing, and is cured only by ultraviolet irradiation. Even in that case, a certain effect can be obtained for confirmation of the presence or absence of curing.

透光性蓋体５と絶縁基体１とを取着している接合材７に紫外線照射を行なうことにより、接合材７の紫外線硬化反応によって透光性蓋体５と絶縁基体１とを接合材７により強固に接合させることができる。また、紫外線照射の際には接合材７に予め含有された色素が変色するため、紫外線照射された製品の接合材７の変色度合いにより、適切に紫外線が照射されて所定の接合強度が得られているか否かを、目視で確認、判断することができる。これにより、透光性蓋体５を取着する封止工程における紫外線照射装置のトラブル、その封止ラインにおけるライントラブル等により、紫外線の照射前と照射済みの製品の識別が困難となることはなく、接合材７の目視により識別が容易となる。その結果、紫外線照射の済んでいない製品（接合材７の未硬化の製品）の流出や紫外線照射の不十分による信頼性の低下した製品が流出することを効果的に防止することができ、信頼性の高い光半導体装置９を提供することができる。   By irradiating the bonding material 7 attaching the translucent lid 5 and the insulating substrate 1 with ultraviolet rays, the bonding material 7 is bonded to the insulating substrate 1 by the ultraviolet curing reaction of the bonding material 7. 7 can be firmly joined. In addition, since the coloring matter previously contained in the bonding material 7 is discolored during the ultraviolet irradiation, the predetermined bonding strength is obtained by appropriately irradiating the ultraviolet light depending on the degree of discoloration of the bonding material 7 of the ultraviolet irradiated product. It can be confirmed and judged visually. As a result, it is difficult to distinguish between pre-irradiated and irradiated products due to troubles in the ultraviolet irradiation device in the sealing process for attaching the translucent lid 5, line troubles in the sealing line, etc. In addition, the bonding material 7 can be easily identified by visual observation. As a result, it is possible to effectively prevent the outflow of products that have not been irradiated with ultraviolet rays (uncured product of the bonding material 7) and the outflow of products with reduced reliability due to insufficient ultraviolet irradiation. A highly reliable optical semiconductor device 9 can be provided.

接合材７に含有される色素は、メラニン色素からなり、例えば長径１〜２μｍ、短径０．４μｍ程度の米粒形状のものなどが用いられる。このような色素は、色素の粉末を未硬化の接合材７に添加し混練することにより、接合材７中に含有される。
Dye contained in the bonding material 7, melanin color hydride Rannahli, eg diameter 1～2Myu m, those of rice grain shape of about minor 0.4 micron m or the like is used. Such dyes by kneading was added to the bonding material 7 uncured powder dye, is containing organic during the joining material 7.

また、色素の含有量は接合材７に対して５質量％以上であることが好ましい。これにより、接合材７の変色を確実に鮮明なものとすることができ、紫外線照射の有無の識別がより容易かつ確実なものとなる。また、経済性や作業性を考慮すると、５乃至２０質量％の範囲がより一層好ましい。   The pigment content is preferably 5% by mass or more with respect to the bonding material 7. Thereby, the discoloration of the bonding material 7 can be surely made clear, and the presence / absence of ultraviolet irradiation can be identified more easily and reliably. In consideration of economy and workability, the range of 5 to 20% by mass is even more preferable.

接合材７は、色素の変色を明瞭に把握するために、それ自体は無色透明または白色系のものであることがよい。このような接合材７として、エポキシ樹脂、シリコーン樹脂等の樹脂から成るものが特に好適である。   The bonding material 7 itself may be colorless and transparent or white in order to clearly grasp the discoloration of the pigment. As such a bonding material 7, a material made of a resin such as an epoxy resin or a silicone resin is particularly suitable.

本発明の光半導体装置９において、接合材７は、紫外線硬化性樹脂から成ることが好ましい。これにより、必要な量の紫外線が接合材７に照射されたか否かのみに応じて接合材７の硬化の度合いが決まるので、接合材７（色素）が変色しているか否か、またどの程度変色しているかを見ることにより、接合材７が確実に硬化して透光性蓋体５が絶縁基体１に強固に接合されているか否かをより確実に識別することができる。   In the optical semiconductor device 9 of the present invention, the bonding material 7 is preferably made of an ultraviolet curable resin. Thereby, since the degree of curing of the bonding material 7 is determined only depending on whether or not the necessary amount of ultraviolet rays has been irradiated to the bonding material 7, whether or not the bonding material 7 (pigment) is discolored and to what extent. By checking whether the color has changed, it is possible to more reliably identify whether or not the bonding material 7 is hardened and the translucent lid 5 is firmly bonded to the insulating substrate 1.

また、接合材７は、絶縁基体１と透光性蓋体５との接合部から透光性蓋体５の下面の内側に向かって延在していることが好ましい。これにより、絶縁基体１と透光性蓋体５とを接合材７を介して取着し、紫外線を照射させた際に接合材７に含有された色素が変色し、透光性蓋体５の下面の内側に向かって延在している部分の接合材７も同様に変色するため、透光性蓋体５を通って受光部に達する外光のうち、受光部の直上の領域の外側から凹部１ａ内に斜めに入り込む外光を遮断することができる。その結果、斜めに入り込む外光の凹部１ａ内での乱反射等により、受光される外光に歪み等を生じることを効果的に軽減、防止することができ、より一層信頼性に優れた半導体装置９を作製することができる。この場合、接合材７の延在する幅は、受光部の直上の領域よりも外側までの幅とするのがよい。接合材７が透光性蓋体５のうち受光部の直上の部分まで延在すると、透光性蓋体５を外光が通って受光部に達することが阻害され、外光が受光部で正常に受光されることが難しくなる。   Moreover, it is preferable that the bonding material 7 extends from the bonding portion between the insulating base 1 and the translucent lid 5 toward the inside of the lower surface of the translucent lid 5. Thereby, the pigment | dye contained in the bonding | jointing material 7 discolors when the insulating base | substrate 1 and the translucent lid | cover 5 are attached via the bonding | jointing material 7, and it irradiates with an ultraviolet-ray, The translucent lid | cover 5 The portion of the bonding material 7 that extends toward the inner side of the lower surface of the lens also changes color in the same manner. Therefore, outside light that reaches the light receiving part through the translucent lid 5 is outside the region immediately above the light receiving part. Therefore, it is possible to block external light that enters obliquely into the recess 1a. As a result, it is possible to effectively reduce and prevent the received external light from being distorted due to irregular reflection or the like of the external light entering obliquely, and the semiconductor device is further excellent in reliability. 9 can be produced. In this case, it is preferable that the extending width of the bonding material 7 is a width extending to the outside of the region immediately above the light receiving portion. When the bonding material 7 extends to a portion immediately above the light receiving portion of the translucent lid 5, it is obstructed that external light passes through the translucent lid 5 and reaches the light receiving portion. It becomes difficult to receive light normally.

接合材７の延在する幅は、未硬化の接合材７の粘度を調整して流れる幅を制御すること等により、所望の幅に制御することができる。   The extending width of the bonding material 7 can be controlled to a desired width by adjusting the viscosity of the uncured bonding material 7 and controlling the flowing width.

また、透光性蓋体５の下面に、接合材７の不必要な流れや延在を防ぐためのダム状の突出部を設けたり、溝を設けたりしてもよい。   In addition, a dam-like protruding portion or a groove may be provided on the lower surface of the translucent lid 5 to prevent unnecessary flow and extension of the bonding material 7.

紫外線で変色するメラニン色素は、接合材７の露出面（紫外線が入射して来る表面）側に近い領域（表層）における含有量を内側（内部）における含有量よりも少なくしておいて、露出面付近で変色した色素が紫外線を吸収して内部に照射されにくくなることを抑制し、接合材７の内部に十分な量の紫外線を入射させて、接合材７の全域において硬化がより確実に行なわれるようにする。 Melanin discoloration in ultraviolet is left to less than the content in the inner (interior) the content of the exposed surface of the junction member 7 region close to the side (Ultraviolet comes incident) (surface layer) In addition, it is possible to prevent the dye discolored in the vicinity of the exposed surface from absorbing ultraviolet rays and being difficult to irradiate the inside, and to allow a sufficient amount of ultraviolet rays to enter the bonding material 7 so that the entire area of the bonding material 7 is cured so that is ensured.

本発明の光半導体装置について実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment about the optical semiconductor device of this invention.

符号の説明Explanation of symbols

１：絶縁基体
１ａ：凹部
２：配線導体
３：光半導体素子
４：電極
５：蓋体
６：接着剤
７：接合材
８：ボンディングワイヤ
９：半導体装置 1: Insulating substrate 1a: Recess 2: Wiring conductor 3: Optical semiconductor element 4: Electrode 5: Lid 6: Adhesive 7: Bonding material 8: Bonding wire 9: Semiconductor device

Claims (3)

上面に光半導体素子を収容し搭載するための凹部を有する絶縁基体と、該絶縁基体の前記凹部の内側から外側に導出された配線導体と、前記絶縁基体の前記凹部の底面に接合されて搭載されるとともに電極が前記配線導体に電気的に接続された光半導体素子と、前記絶縁基体の上面に前記凹部を塞ぐようにして接合材を介して取着された透光性蓋体とを具備しており、前記接合材は、紫外線硬化性であるとともに紫外線によって変色するメラニン色素を含有しており、該メラニン色素は、前記接合材の露出面側に近い領域における含有量が前記接合材の内側における含有量よりも少ないことを特徴とする光半導体装置。 An insulating base having a recess for receiving and mounting an optical semiconductor element on the top surface, a wiring conductor led out from the inside of the recess of the insulating base, and a bottom surface of the recess of the insulating base are mounted and mounted And an optical semiconductor element in which an electrode is electrically connected to the wiring conductor, and a translucent lid attached to the upper surface of the insulating base via a bonding material so as to close the recess. The bonding material contains a melanin pigment that is ultraviolet curable and discolors by ultraviolet rays, and the content of the melanin pigment in a region near the exposed surface of the bonding material is that of the bonding material. An optical semiconductor device characterized by being less than the content on the inner side . 前記接合材は、紫外線硬化性樹脂から成ることを特徴とする請求項１記載の光半導体装置。   The optical semiconductor device according to claim 1, wherein the bonding material is made of an ultraviolet curable resin. 前記接合材は、前記絶縁基体と前記透光性蓋体との接合部から前記透光性蓋体の下面の内側に向かって延在していることを特徴とする請求項１または請求項２記載の光半導体装置。   The said bonding | jointing material is extended toward the inner side of the lower surface of the said translucent cover body from the junction part of the said insulation base | substrate and the said translucent cover body. The optical semiconductor device described.
JP2004188946A 2004-06-25 2004-06-25 Optical semiconductor device Expired - Fee Related JP4583086B2 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0445125A (en) * 1990-06-12 1992-02-14 Jujo Paper Co Ltd Colorable and curable composition and colored and cured product therefrom
JP2003243673A (en) * 2001-07-31 2003-08-29 Kyocera Corp Optical semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0445125A (en) * 1990-06-12 1992-02-14 Jujo Paper Co Ltd Colorable and curable composition and colored and cured product therefrom
JP2003243673A (en) * 2001-07-31 2003-08-29 Kyocera Corp Optical semiconductor device

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