JP4582056B2 - Sensor device - Google Patents

Description

  The present invention relates to a sensor device in which a resin film is interposed between a semiconductor chip having a sensing unit for detecting a mechanical quantity and a circuit chip.

  Conventionally, as a method for electrically connecting a semiconductor chip having a sensing unit for detecting a mechanical quantity such as angular velocity, acceleration, pressure, and the like and a circuit chip, a flip chip bonding method has been proposed in, for example, Patent Document 1. ing.

Specifically, Patent Document 1 has a sensing unit for detecting a mechanical quantity, a pad mainly composed of aluminum on one side, and a first bump mainly composed of gold on the surface of the pad. A prepared semiconductor chip and a circuit chip on which a second bump corresponding to the first bump group is formed are prepared. Then, a method has been proposed in which flip chip bonding is performed with the first and second bumps facing each other, and both are integrated while ensuring a certain gap between the semiconductor chip and the circuit chip. For flip-chip bonding of such bumps, for example, an ultrasonic bonding method is employed.
Japanese Patent Laid-Open No. 11-8270

  However, in the above conventional technique, foreign matters are generated when the bumps are joined, and the foreign matters may adhere to the sensing portion of the semiconductor chip. Many sensing parts that detect mechanical quantities are exposed on one side of the semiconductor chip and have a movable part, and if foreign matter adheres to the sensing part during bump bonding, etc., the characteristics of the sensing part Will be affected.

  Therefore, in order to protect the sensing part of the semiconductor chip, it is considered to bond an adhesive resin film covering the sensing part to one surface of the semiconductor chip provided with the sensing part. In such a resin film, a groove is formed in a portion facing the sensing portion so as not to contact the sensing portion of the semiconductor chip, and even if the resin film is attached to the semiconductor chip, sensing is performed. The part does not come into contact with the resin film.

  As described above, when the semiconductor chip and the circuit chip are flip-chip bonded via the resin film, the flip-chip bonding is performed in a state in which the resin film is heated to improve the adhesion, and the semiconductor chip and the circuit chip are integrated. It will be made. At this time, each bump of each chip is in direct contact with the softened resin film.

  However, when a semiconductor chip and a circuit chip are integrated using an adhesive resin film, the resin film is softened because the resin film is heated in order to enhance the bondability between the bumps, and chip bonding is performed. There is a possibility that it will expand due to compression and come into contact with the sensing part of the semiconductor chip. As described above, if a foreign substance adheres to the sensing part of the semiconductor chip, the characteristics of the sensing part may be affected, which is not preferable.

  In view of the above, the present invention provides a sensor device in which a semiconductor chip and a circuit chip are flip-chip mounted by bonding via a bump, and a resin film is provided between the semiconductor chip and the circuit chip to integrate them. The purpose is to prevent the expanded resin film from adhering to the sensing part of the semiconductor chip.

  In order to achieve the above object, in the present invention, a pad (14) to which the first bump (15) is bonded is formed on the semiconductor chip (10), and the semiconductor chip is exposed so that the pad is exposed. A protective film (16) that covers the surface of the chip is formed, and the surface of the protective film that contacts the resin film (30) is subjected to water repellent treatment.

  In this way, the surface of the protective film (16) formed on the semiconductor chip is subjected to a water repellent treatment, so that the resin film that has been softened and expanded when the semiconductor chip and the circuit chip (20) are joined is wetted. It becomes possible to suppress the spread. For this reason, when joining the 1st bump and the 2nd bump, it can prevent that a resin film reaches | attains the sensing part of a semiconductor chip, and by extension, the resin film adheres to the sensing part of a semiconductor chip. Can be prevented.

  In order to manufacture the sensor device having such a structure, as the semiconductor chip, the concave portions (33, 34) are formed in the portion corresponding to the first bump before the first bump and the second bump are bonded. It is possible to adopt a structure in which the formed resin film is provided and the first bump is disposed in the recess when the resin film is sandwiched between the semiconductor chip and the circuit chip. .

  In addition, as the resin film, before the first bump and the second bump are joined, the first resin film (31) having the first space portion and the second space portion, and the sheet-like first It is preferable that it is a laminated structure of 2 resin films (32). By setting it as such a laminated structure, it can be set as the structure by which the recessed part was provided only in the one surface side.

  As the water repellent treatment as described above, for example, the contact angle of water droplets with respect to the surface of the protective film that contacts the resin film can be 60 degrees or more. By performing the plasma treatment containing F, the surface of the protective film can be combined with F, and the water repellent treatment is performed such that the contact angle of the surface of the protective film that contacts the resin film is 60 degrees or more. be able to. Further, as the water repellent treatment, for example, the roughness representing the maximum height difference of the irregularities on the surface of the protective film may be 50 nm or more. By performing the plasma treatment including Ar, the water repellent treatment can be performed so that the roughness representing the maximum height difference of the unevenness on the surface of the protective film becomes 50 nm or more.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic cross-sectional view of a sensor device 100 according to the first embodiment of the present invention. 2 is a cross-sectional view showing components used to manufacture the sensor device 100 shown in FIG. 1, and FIG. 3 is a cross-sectional view showing the manufacturing process of the sensor device 100. As shown in FIG. Hereinafter, the configuration and manufacturing method of the sensor device 100 according to the first embodiment will be described with reference to these drawings.

  As shown in FIG. 1, the sensor device 100 includes a semiconductor chip 10 and a circuit chip 20, and a resin film 30 is sandwiched between them.

  The semiconductor chip 10 is configured to detect an angular velocity as a mechanical quantity, and is provided with a vibrating body 12 as a sensing unit that is a movable unit on one surface 11 side thereof. Such a semiconductor chip 10 is formed on a general silicon substrate such as an SOI substrate by a known semiconductor process.

  The vibrating body 12 forms a beam structure having a generally known comb-tooth structure, is supported by an elastic beam, and is movable by applying an angular velocity. The angular velocity can be detected by detecting a change in capacitance between the detection electrode (not shown) and the vibrating body 12.

  A silicon oxide-based insulating layer 13 as an interlayer insulating film is formed on the one surface 11 side of the semiconductor chip 10. The insulating layer 13 is made of a silicon oxide film or a film in which another element is contained in silicon oxide. For example, BPSG can be adopted.

  A pad 14 is provided on the insulating layer 13 for applying a voltage to the vibrating body 12 and extracting a signal. The pad 14 is composed of, for example, Al (aluminum) as a main component, and is composed of Al alone or containing 90% or more of Al. As such a pad 14, Al, Al—Si—Cu made of Al or 99% and the balance of Si and Cu can be used.

  Further, a protective film 16 made of a silicon nitride film, polyimide, or the like is formed on the surface 11 of the semiconductor chip 10 except for the pads 14, and the surface 11 is covered and protected by the protective film 16. . On the surface of the protective film 16, the protective film 16 itself has water repellency, or plasma treatment with a gas containing F (fluorine) or the like on the surface of the protective film 16 or Ar (argon). Water repellency is imparted by performing water repellency treatment such as plasma treatment with a gas containing gas. Specifically, the contact angle with respect to the surface of the protective film 16 is set to, for example, 60 degrees or more, or the roughness of the surface of the protective film 16 is set to 50 nm or more.

  The contact angle is the angle formed by the surface of the water droplet and the solid surface when a small water droplet is placed on the solid surface. The lower the contact angle, the lower the water repellency, and the higher the contact angle, the higher the water repellency. It is shown that. The roughness represents the maximum height difference of the unevenness on the surface of the object, and the greater the roughness, the higher the water repellency.

  Furthermore, a first bump 15 mainly composed of Au (gold) is provided on the pad 14. The first bump 15 is made of pure gold or a material containing 99% or more of gold, and includes a bump forming method using a general wire bonding method, a general stud bump forming method, a solder bump forming method, Or it forms by employ | adopting various methods, such as screen printing using conductor pastes, such as gold | metal | money, or printing by the inkjet method using pastes, such as gold | metal | money.

  The circuit chip 20 includes a control circuit having a function of outputting a drive signal and a detection signal to the semiconductor chip 10, processing an electric signal from the semiconductor chip 10, and outputting the signal to the outside. . Such a circuit chip 20 is formed by forming a MOS transistor, a bipolar transistor, or the like on a silicon substrate or the like by a known semiconductor process, and is configured by an IC chip, a general flip chip, or the like.

  On one surface 21 of the circuit chip 20, a pad 22 electrically connected to a control circuit formed on the circuit chip 20 is provided. On the pad 22, a second bump 23 having Au (gold) as a main component is provided. Similar to the first bump 15, the second bump 23 is made of pure gold or a material containing 99% or more of gold, and is formed by a bump forming method using a general wire bonding method.

  In the present embodiment, as shown in FIG. 3, the bumps 15, 23 before bonding are compared with the area of the tip surface 15 a of the tip surface 15 a of the first bump 15. The area of the front end surface 23a of the second bump 23 is larger. More specifically, the area of the tip surface 23a of the second bump 23 is preferably 1.4 times or more than the area of the tip surface 15a of the first bump 15.

  Specifically, as shown in FIG. 3, when the diameter of the tip surface 15a of the first bump 15 is d1 in the state before the first bump 15 and the second bump 23 are joined, d1 is, for example, If the diameter of the front end surface 23a of the second bump 23 is d2, d2 is set to 70 μm or more, for example.

  Then, as shown in FIG. 3, the semiconductor chip 10 and the circuit chip 20 are in a state in which the one surfaces 11 and 21 face each other, and the first bump 15 and the second bump 23 are, for example, ultrasonically bonded. The first bump 15 and the second bump 23 are bonded to each other in a state in which the front end surface 15a of the first bump 15 is included in the front end surface 23a of the second bump 23 by metal bonding to each other by the method. Is done. Thus, the semiconductor chip 10 and the circuit chip 20 are mechanically and electrically connected via the bumps 15 and 23. In this way, the gap between the chips 10 and 20 is secured by the bumps 15 and 23, and the vibrating body 12 and the circuit chip 20 are separated.

  In such a configuration, an electrical signal from the semiconductor chip 10 is output to the circuit chip 20 through the bumps 15 and 23, and is converted into a voltage signal by, for example, a C / V conversion circuit provided in the circuit chip 20. Thus, it is output to the outside of the sensor device 100 as an angular velocity signal.

  The resin film 30 is for protecting the vibrating body 12 as a sensing unit provided in the semiconductor chip 10, and between the semiconductor chip 10 and the circuit chip 20 separated by the bumps 15 and 23 as described above. Is provided. The resin film 30 is provided with a recess 30 a in a portion corresponding to the vibration body 12 of the semiconductor chip 10, and the vibration body 12 of the semiconductor chip 10 is separated from the resin film 30 by the recess 30 a.

  In this embodiment, NCF (Non Conductive Film) as an adhesive non-conductive resin layer is employed as the resin film 30. And this resin film 30 is crimped | bonded to the one surface 21 of the circuit chip 20 so that the 2nd bump 23 may be covered using the adhesiveness.

  As the resin film 30, an electrically insulating resin such as an epoxy resin, a silicon resin, a polyimide resin or the like is employed. The resin film 30 made of such a material is softened by applying heat, and is cured by continuing to apply heat in this softened state. In the present embodiment, the resin film 30 has a two-layer structure of a first resin film 31 and a second resin film 32 before joining the semiconductor chip 10 and the circuit chip 20 as shown in FIG. By joining the semiconductor chip 10 to the circuit chip 20, the first resin film 31 comes into contact with the semiconductor chip 10, and the second resin film 32 comes into contact with the circuit chip 20.

  Further, the shape of the resin film 30 changes before and after the semiconductor chip 10 and the circuit chip 20 are joined. That is, the adhesive resin film 30 is in the form shown in FIG. 2 before joining, but is thermally expanded by the heat during joining, and is in the form shown in FIG. 1 after joining. Therefore, as shown in FIG. 2, the resin film 30 before bonding is provided with a first space portion 33 and a second space portion 34 that absorb the volume of the film itself that has thermally expanded. As shown in FIG. 1, the second space 34 is filled after bonding, and the chips 10 and 20 are bonded.

  Such first space portion 33 and second space portion 34 are provided in the first resin film 31, and heat is generated when the resin film 30 is integrated between the semiconductor chip 10 and the circuit chip 20. It becomes a space where the expanded resin film 30 enters. Therefore, the sectional view of the sensor device 100 shown in FIG. 1 shows a state after the second space portion 34 is filled. The shape of the resin film 30 before and after bonding will be described in detail when the method for manufacturing the sensor device 100 is described. The sensor device 100 according to the present embodiment is configured as described above.

  Next, a method for manufacturing the sensor device 100 shown in FIG. 1 will be described.

  First, as shown in FIG. 2, a structure in which a resin film 30 is provided on the surface of the semiconductor chip 10 is formed as follows.

  A silicon wafer having a plurality of vibrators 12 formed on a silicon substrate is prepared. For manufacturing the vibrating body 12, a conventionally well-known method can be used. Then, in the wafer process, a pad 14 made of Al having a film thickness of, for example, about 0.7 μm is formed using a photolithographic technique and a sputtering method. Further, a protective film 16 is formed in a region excluding the portion where the vibrating body 12 is formed. The surface of the protective film 16 is subjected to water repellent treatment by plasma treatment using a gas containing F or the like, or a plasma treatment using a gas containing Ar. As a result, the surface of the protective film 16 can be fluorinated, or irregularities can be formed on the surface of the protective film 16 by plasma treatment, and water repellency can be imparted to the surface of the protective film 16.

  At this time, when the surface of the protective film 16 is subjected to water repellent treatment by plasma treatment with a gas containing F or the like, the water repellent property is such that the contact angle with respect to the surface of the protective film 16 is 60 degrees or more. In the case of plasma processing using Ar-containing gas with processing conditions set, the water repellent processing conditions are set so that the roughness representing the maximum height difference of the irregularities on the surface of the protective film 16 is 50 nm or more. .

  Next, a first bump 15 is formed on the surface of the pad 14. Specifically, a conical first bump 15 is formed on each pad 14 by bonding a wire made of Au (gold) to the pad 14 by a wire bonding method.

  After forming the first bump 15 in this way, the plate is pressed against the tip portion of the first bump 15 and a certain load is applied to cause plastic deformation and leveling (leveling process). At this time, the flattened surface becomes the tip surface 15a that is brought into contact with the tip surface 23a of the second bump 23 on the circuit chip 20 side. As a result, the first bump 15 has a truncated cone shape whose diameter gradually decreases toward the tip, and the height is, for example, several tens of μm, and the diameter d1 of the tip surface 15a is, for example, 60 μm.

  Subsequently, a resin film 30 for protecting the vibrating body 12 from foreign substances is formed. Specifically, the first resin film 31 and the second resin film 32 having the adhesive properties described above are prepared, and the first space portion 33 and the first resin film 31 penetrating through the first resin film 31 by punching using a mold or a laser are prepared. Two space portions 34 are formed. In the present embodiment, the first space portion 33 is provided in a portion of the first resin film 31 facing the vibrating body 12 of the semiconductor chip 10, and the second space portion 34 is provided on the outer peripheral side of the first space portion 33. Is provided.

  Then, a resin film 30 is formed by bonding the first resin film 31 having the first space portion 33 and the second space portion 34 and the second resin film 32 having no such space portion. Thereby, the resin film 30 that can be regarded as one film having the first space portion 33 and the second space portion 34 is formed.

  Thereafter, the first resin film 31 of the resin film 30 and one surface of the wafer on which the vibrating body 12 is formed are bonded together, and the wafer is diced to be divided into semiconductor chips 10. Thus, a structure in which the resin film 30 is formed on the semiconductor chip 10 as shown in FIG. 2 is configured.

  Subsequently, the circuit chip 20 is formed. First, a wafer on which a control circuit and the like are formed is prepared. Then, a pad 22 made of Al is formed at a desired position on the wafer by a method similar to the formation of the pad 14. Then, a second bump 23 made of Au is formed on the pad 22 at a position facing the first bump 15 of the semiconductor chip 10 by the same method as the first bump 15, and then the first bump is formed. After performing the leveling process in the same manner as 15, the wafer is diced and divided into circuit chips 20.

  At this time, by the leveling process, as described above, the diameter d2 of the tip surface 23a of the second bump 23 is set to 70 μm or more, for example, and the area of the tip surface 23a of the second bump 23 is the tip surface of the first bump 15 The area of 15a should be 1.4 times or more. Note that the height of the second bump 23 is not a problem as long as the area of the front end surface 23 a can be secured, but can be set to the same level as that of the first bump 15, for example.

  In this way, by flattening the shape of the tip of each bump 15, 23 by leveling processing, it is possible to suppress the occurrence of stress concentration in each bump 15, 23 when bonding each bump 15, 23. As a result, damage to the chips 10 and 20 can be reduced.

  Here, the area relationship between the bumps 15 and 23 is prepared by changing the diameter d2 of the tip surface 23a of the second bump 23 to 60 μm, 70 μm, 80 μm, and 90 μm, and the tip of the first bump 15. The surface 15a having a diameter d1 of 60 μm is prepared and determined based on the result of examining the damage occurrence rates of the bumps 15 and 23 in ultrasonic bonding.

  Specifically, after bonding the bumps 15 and 23, the pad 22 in the circuit chip 20 is etched by immersing in hydrochloric acid (about 35%, room temperature), and the underlying substrate is exposed to allow microscopic observation. Each substrate was examined for damage on each sample. And when the crack of the board | substrate of the circuit chip 20 is observed with an optical microscope, or the case where the distortion of the said board | substrate is observed as an interference fringe, it was set as damage generation, and damage generate | occur | produced among several investigated samples. The ratio of the substrate was the damage occurrence rate (%).

  In addition, ultrasonic bonding was performed with respect to each sample under the conditions of ultrasonic bonding: amplitude: 2.8 μm, oscillation time: 0.3 seconds, peak load: 4N / 4 bump, tool and stage temperature: 150 ° C.

  As a result, when the diameter d2 of the front end surface 23a of the second bump 23 was set to 70 μm or more, the damage occurrence rate became almost zero. This is because, by increasing the area of the front end surface 23a of the second bump 23 of the circuit chip 20 as described above, the bonding load received from the first bump 15 is widely dispersed. This is thought to be due to the relaxation of stress applied to the surface.

  Therefore, by making the diameter d2 of the front end face 23a of the second bump 23 larger than the diameter d1 of the front end face 15a of the first bump 15, the damage occurrence rate of the circuit chip 20 can be reduced. From the above experimental results, it is preferable that the area of the front end surface 23a of the second bump 23 be 1.4 times or more the area of the front end surface 15a of the first bump 15 because the stress relaxation can be achieved. It can be said.

  Based on the above knowledge, in this embodiment, the diameters d1 and d2 of the bumps 15 and 23 are defined as described above. As described above, by setting the area of the front end surface 23a of the second bump 23 to be larger than the area of the front end surface 15a of the first bump 15, it is possible to easily align both the bumps 15 and 23. Thus, the effect of preventing the displacement of the bumps 15 and 23 can also be obtained.

  Thereafter, the first bump 15 on the semiconductor chip 10 and the second bump 23 on the circuit chip 20 are ultrasonically bonded using an ultrasonic bonding apparatus 200 as shown in FIG. The ultrasonic bonding apparatus 200 includes a stage 210 that fixes the circuit chip 20, a tool 220 that fixes the semiconductor chip 10, and a drive circuit (not shown) that drives the tool 220 by ultrasonic vibration. Yes. Note that FIG. 3 shows a schematic cross-sectional view of the semiconductor chip 10 and the circuit chip 20, and in the semiconductor chip 10, the vibrating body 12 serving as a sensing unit is omitted.

  The ultrasonic bonding apparatus 200 is configured so that the temperature of the stage 210 and the tool 220 can be controlled to heat the semiconductor chip 10 and the circuit chip 20. The tool 220 supports the semiconductor chip 10 by a method such as vacuum suction, for example, and is configured to vibrate ultrasonically while applying a load to the stage 210 side while supporting the semiconductor chip 10.

  Then, by arranging the circuit chip 20 and the semiconductor chip 10 on the stage 210 and the tool 220 as shown in FIG. 3, the one surface 11 on which the first bumps 15 of the semiconductor chip 10 are formed, The one surface 21 on which the second bump 23 is formed is made to face the circuit chip 20. In this state, the resin film 30 is softened by heating the resin film 30 via the semiconductor chip 10 and the circuit chip 20 by the stage 210 and the tool 220. At the same time, the tool 220 presses the first bump 15 of the semiconductor chip 10 against the second bump 23 of the circuit chip 20.

  Subsequently, an ultrasonic wave is applied to the semiconductor chip 10 while heating the semiconductor chip 10 and the circuit chip 20, and the both bumps 15 and 23 are ultrasonically bonded. For example, the ultrasonic bonding conditions in the ultrasonic bonding apparatus 200 are as follows. The ultrasonic bonding is performed with the amplitude: 2.8 μm, the oscillation time: 0.3 seconds, the peak load: 4N / 4 bump, the temperature of the tool 220 and the stage 210: 150 ° C. However, these bonding conditions are merely examples, and the present invention is not limited to these.

  In this way, when the resin film 30 is heated and softened, the adhesiveness is improved and the chips 10 and 20 are bonded, and when the bumps 15 and 23 are ultrasonically bonded, the resin film 30 is softened by heat. Expands to increase volume.

  At this time, in this embodiment, since the surface of the protective film 16 is subjected to water repellent treatment, the wettability of the softened / expanded resin film 30 to the surface of the protective film 16 is lowered, and the resin film 30 is spread and wetted. Can be suppressed. Thus, when the semiconductor chip 10 and the circuit chip 20 are joined via the resin film 30, even if the resin film 30 is softened / expanded by heat, it is softened / expanded by the water repellency of the surface of the protective film 16. Since the wetting and spreading of the first resin film 31 can be suppressed, it is possible to prevent the first resin film 31 and the second resin film 32 expanded by the compressive force due to bonding from contacting the vibrating body 12.

  4 to 6 are views showing this state, FIG. 4 is a schematic top view showing the state of the first resin film 31 before the resin film 30 is softened and expanded, and FIG. FIG. 6 is a schematic top view showing the state of the first resin film 31 after the softening / expansion of the resin film 30 when the water-repellent treatment is applied to FIG. 6, and FIG. 6 shows the resin when the protective film 16 is not subjected to the water-repellent treatment 3 is a schematic top view showing a state of the first resin film 31 after the softening / expansion of the film 30. FIG.

  As can be seen from FIGS. 5 and 6, when the resin film 30 is softened / expanded, the first resin film 31 spreads with respect to the state of FIG. 4, but when the water repellent treatment is performed as shown in FIG. 5. The wet spread of the first resin film 31 is small and does not reach the vibrating body 12. On the other hand, when the water repellent treatment is not performed as shown in FIG. 6, the first resin film 31 is in contact with the vibrating body 12. Thus, it can be seen that by performing water-repellent treatment on the surface of the protective film 16, it is possible to prevent an abnormality in sensor characteristics that occurs when the resin film 30 contacts the vibrating body 12.

  Further, in order to obtain the above effects, an experiment was conducted to examine how much water repellency is required. The results are shown in FIGS.

  FIG. 7 shows the relationship between the contact angle of the protective film 16 and the approach distance of the first resin film 31 to the vibrating body 12 when the surface of the protective film 16 is subjected to plasma treatment with a gas containing F or the like. Is. As described above, the contact angle is an angle formed between the liquid surface and the solid surface when a small water droplet is placed on the solid surface. The contact angle varies depending on the degree of water repellent treatment on the surface of the protective film 16. . For example, in the case of a plasma treatment with a gas containing F, the protective film 16 can be terminated with fluorine by reacting the surface with F, and can impart water repellency. The greater the number, the higher the water repellency and the larger the contact angle. As a result of this experiment, it was confirmed that the first resin film 31 can be prevented from entering the vibrating body 12 by setting the contact angle to 60 degrees or more.

  FIG. 8 shows the roughness of the surface of the protective film 16 when the plasma treatment is performed with a gas containing Ar on the surface of the protective film 16 (the maximum height difference of the unevenness of the surface of the protective film 16) and the vibration body 12. The relationship of the approach distance of the 1st resin film 31 is shown. As described above, the water repellency can be increased as the surface roughness of the protective film 16 increases. As a result of this experiment, it was confirmed that the first resin film 31 can be prevented from entering the vibrating body 12 by setting the roughness to 50 nm or more.

  As described above, in this embodiment, the surface of the protective film 16 is subjected to water repellent treatment so that the wettability of the resin film 30 (particularly, the first resin film 31) is reduced, and the resin film 30 is softened. -It is designed to suppress wetting and spreading when expanded. Accordingly, in the sensor device 100 that performs flip chip mounting by bonding the semiconductor chip 10 and the circuit chip 20 via the bumps 15 and 23, the resin film 30 is provided between the semiconductor chip 10 and the circuit chip 20 to provide a semiconductor. When the chip 10 and the circuit chip 20 are integrated, it is possible to prevent the softened / expanded resin film 30 from adhering to the vibrating body 12 of the semiconductor chip 10.

(Other embodiments)
In the embodiment described above, the surface of the protective film 16 is subjected to plasma treatment with a gas containing F or the like, or plasma treatment with a gas containing Ar so as to impart water repellency to the surface of the protective film 16. I have to. However, these are examples of a production method that can impart water repellency to the surface of the protective film 16, and other methods may be used. For example, a water repellent layer may be formed on the surface of the protective film 16.

  In the above embodiment, the vibrating body 12 is taken as an example of the sensing unit and the angular velocity is detected by the vibrating body 12. However, the acceleration may be detected in addition to the angular velocity. Furthermore, although the vibrating body 12 has been described as an example of a sensing unit for detecting angular velocity and acceleration, the sensing unit is for sensing other physical quantities, and the flip chip mounting as described above is performed. The present invention can also be applied to the sensor device 100.

It is a schematic sectional drawing of the sensor apparatus 100 in 1st Embodiment of this invention. It is sectional drawing which showed the component used in order to manufacture the sensor apparatus 100 shown in FIG. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the sensor device 100. FIG. 3 is a schematic top view showing a state of the first resin film 31 before the resin film 30 is softened and expanded. It is the upper surface schematic diagram which showed the mode of the 1st resin film 31 after the softening and expansion | swelling of the resin film 30 at the time of performing a water-repellent process to the protective film 16. FIG. It is the upper surface schematic diagram which showed the mode of the 1st resin film 31 after the softening and expansion | swelling of the resin film 30 when the water-repellent treatment was not performed to the protective film 16. FIG. 6 is a graph showing the relationship between the contact angle of the protective film 16 and the approach distance of the first resin film 31 to the vibrating body 12 when the surface of the protective film 16 is subjected to plasma treatment with a gas containing F or the like. 6 is a graph showing the relationship between the roughness of the surface of the protective film 16 and the approach distance of the first resin film 31 into the vibrator 12 when the surface of the protective film 16 is subjected to a plasma treatment with a gas containing Ar. .

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor chip, 11 ... One side, 12 ... Vibrating body, 13 ... Insulating layer, 14 ... Pad, 15 ... Bump, 15a ... End surface, 16 ... Protective film, 20 ... Circuit chip, 21 ... One side, 22 ... Pad, 23... Bump, 23 a... Tip surface, 30... Resin film, 30 a... Recess, 31, 32... First and second resin films, 33 and 34. ... stage, 220 ... tool.

Claims (5)

A semiconductor chip (10) having a sensing portion (12) for detecting a mechanical quantity and a first bump (15) arranged so as to surround the sensing portion, and the first at a position facing the first bump. The circuit chip (20) having the second bump (23) to be bonded to the bump is integrally formed through a resin film (30) having a recess (30a) at a portion facing the sensing portion of the semiconductor chip. A sensor device in which the resin film is bonded to the semiconductor chip and the circuit chip so that the concave portion is separated from the sensing portion,
A pad (14) to which the first bump is bonded is formed on the semiconductor chip, and a protective film (16) is formed to cover the surface of the semiconductor chip so as to expose the pad. The surface of the protective film and the resin film are in contact with each other by bonding the first bump and the second bump, and the surface of the protective film that is in contact with the resin film is subjected to water repellent treatment. A sensor device characterized by being applied. 2. The sensor according to claim 1, wherein a surface of the protective film that is in contact with the resin film is subjected to the water repellent treatment so that a contact angle of a water droplet with respect to the surface is 60 degrees or more. apparatus. The surface which contacts the said resin film among the said protective films is couple | bonded with F by performing the plasma process containing F as said water-repellent process. Sensor device. 2. The sensor device according to claim 1, wherein a surface of the protective film that is in contact with the resin film has a roughness representing a maximum height difference of unevenness of the surface of 50 nm or more. The surface of the protective film that comes into contact with the resin film is subjected to a plasma treatment containing Ar as the water repellent treatment, so that the roughness representing the maximum height difference of the irregularities on the surface is 50 nm or more. The sensor device according to claim 4.

Images