JP4582017B2 - Optical substrate wafer and method of manufacturing optical component - Google Patents

Description

  The present invention relates to a film structure of a dicing line formed on the surface of an optical substrate wafer in a process of mass-producing an optical component using a large-area optical substrate wafer such as a glass substrate wafer, and an improvement of a method for manufacturing the optical component. .

  Conventionally, when mass-producing an optical component having a structure in which an optical thin film is formed on an optical substrate surface such as a glass substrate, a large-area glass as shown in an overall view of a glass substrate wafer 100 shown in FIG. A linear dicing line 101 is formed in a lattice pattern on one surface of the substrate wafer 100, and an optical thin film is formed on the surface of each optical component individual region 102 defined by the dicing line 101, along the dicing line. Then, the procedure for cutting the optical substrate wafer and dividing it into individual pieces has been performed.

FIG. 4B is a partially enlarged view of the glass substrate wafer shown in FIG. 4A and shows a state in which the aperture filter 105 as an optical component piece is connected via the dicing line 101. The aperture filter 105 has a configuration in which a first optical thin film 106 and a second optical thin film 107 having different properties are formed on the surface of the optical component individual region 102. For example, the circular first optical thin film 106 located at the center has a property of transmitting laser light in the 660 nm band for DVD recording / reproduction, and the second optical thin film 106 located on the outer diameter side of the first optical thin film 106. The thin film 107 has a property of transmitting both 660 nm band laser light and 780 nm band laser light for CD recording and reproduction.
FIG. 4C is a partially enlarged view of the dicing line 101 shown in FIG. 4B. Since the film constituting the dicing line 101 is formed simultaneously with the formation of the second optical thin film 107, FIG. It is the same material as the optical thin film which comprises 2 optical thin films.

The second optical thin film constituting the dicing line 101 has a thin center line 101a formed along the center line of the cutting width when cutting with a dicing blade (not shown), and predetermined sides on both sides of the center line 101a. And a thick outer line 101b arranged in parallel with an interval. A substrate exposed portion 101c in which the glass substrate surface is exposed in a linear shape is left between the center line 101a and each outer line 101b and outside the outer line.
Each of the center line 101a and the outer line 101b constituting each dicing line 101 is continuously formed without being cut off.

  On the other hand, an orientation flat (substrate exposed surface) 103 is formed in the optical component individual region 102 as a mark for indicating the direction of the aperture filter 105 as an optical component. For example, when the opening filter 105 finally divided into individual pieces is stored in a transporting tray or the like, all the opening filters are stored in the tray in the same direction with the orientation flat 103 as a mark. It becomes possible to do. When an optical component is automatically mounted on an actual machine using an automatic mounter on the assembly maker side of the optical device, an operation for confirming the correct assembly direction while confirming the position of the orientation flat is performed by a camera. Therefore, if even a small amount of residue such as a photoresist film remains on the orientation flat surface, the direction of the optical component cannot be confirmed and may be discarded as a defective product.

That is, the dicing line 101 and the optical thin films 106 and 107 are formed by a photolithography technique described later. During the optical thin film formation process by this photolithography technique, the portions corresponding to the substrate exposed portion 101c and the orientation flat 103 are masked by the photoresist film, and the photoresist film is removed by a remover (solvent) after the film formation is completed. Is removed, but the center line 101a and the outer line 101b have a continuous structure like the dicing line according to the conventional example. In other words, if the amount of photoresist used is large, the photoresist film is removed from the remover liquid. The removal efficiency at the time of removal becomes extremely poor, and there is a problem that a part of the photoresist remains without being removed unless the wafer is immersed in the remover for a long time (for example, 15 to 24 hours). there were.
In particular, when the formed photoresist film is post-baked, the photoresist film is in a solidified state, so that the time required for removal by immersing in the remover liquid is further prolonged, and the productivity is greatly increased. To drop. Furthermore, the remover liquid gets dirty early, and the service life is reached in a short time.

Next, FIGS. 5A to 5J are explanatory views showing a procedure for forming a plurality of aperture filters and dicing lines on the glass substrate wafer shown in FIG.
First, in the first resist film formation step of FIG. 5A, a negative first photoresist film 111 is formed on one surface of the optical substrate wafer 100.
In the first exposure step of FIG. 5B, after the first photoresist film 111 is pre-baked, the first optical thin film region 106 is selectively exposed by using a predetermined photomask 112. The second optical thin film region 107 and the dicing line region 101 excluding the range are exposed. At this time, an orientation flat forming region (not shown) located between the second optical thin film region 107 and the dicing line region 101 is also exposed.

  In the first developing step of FIG. 5C, the non-exposed portion of the first photoresist film 111 is removed and only the exposed portion remains as the first developing film 113. In the first optical thin film forming step (d), the first optical thin film 114 is formed on the optical substrate wafer surface including the first developing film 113. In the first developing film removing step (e), the first developing film 113 and the first optical thin film 114 on the first developing film are removed, whereby the first developing film 113 on the optical substrate wafer surface 100 is removed. Only the optical thin film 114 is left. In the second resist film formation step (f), a negative second photoresist film 115 is formed on the optical substrate wafer surface 100 including the first optical thin film 114. In this step, the second photoresist film 115 is pre-baked and post-baked.

  In the second exposure step of FIG. 5G, the entire second photoresist film 115 (first optical film) on the first optical thin film 114 is selectively exposed using a predetermined photomask 116. An area corresponding to the thin film 106), and a linear area serving as the substrate exposed portion 101c located between the center line 101a and the outer line 101b and outside the outer line are partially exposed. In the second developing step (h), the non-exposed portion of the second photoresist film 115 is removed and only the exposed portion remains as the second developing film 117. In the second optical thin film deposition step (i), the second optical thin film 118 is deposited on the optical substrate wafer surface 100 including the second developing film 117.

  In the second developing film removing step of FIG. 5J, the second developing film 117 and the second developing film 117 are removed by a remover solution (solvent) for removing the second developing film 117 (second photoresist film 115). The second optical thin film 118 on the second developing film 117 is removed (lifted off), so that the second optical thin film 118 formed directly on the optical substrate wafer surface 100 remains. As a result of this processing, the first and second optical thin films 117 and 118 and the orientation flat 103 are arranged at appropriate positions in the optical component individual region.

The orientation flat 103 as the substrate exposed surface is not shown in FIG. 5 (j), but at a further outer position (in the optical component individual region 102) of one outer line 101b constituting the dicing line region 101, It is formed by the same method as the exposed portion 101c in the dicing line region.
As a result of performing the above steps, each individual region 102 has an aperture filter including a first optical thin film 114 (106), a second optical thin film 118 (107), and an orientation flat (substrate exposed surface) 103, respectively. 105 is formed.
The dicing line region 101 is composed of the center line 101a, the outer line 101b, and the substrate exposed portion 101c shown in FIG. 4C, and the center line 101a and the outer line 101b are continuous (not cut). Not) configured as a strip line.

  However, in the above-described conventional manufacturing method, the second photoresist film 115 is post-baked to form the second developing film 117 in the second resist film forming step (f). After the exposure step (h), the second developing film 117 is contracted and strongly fixed on the wafer surface. Accordingly, the second developing film 117 (second photoresist film 115) cannot be easily removed by the remover liquid (solvent) in the second developing film removing step (j), and the orientation flat 103 is formed. Then, the residue of the second developing film (second photoresist film) 117 tends to remain on the surface of the substrate exposed portion 101c. When an optical component piece with resist residue attached to the formation area of the orientation flat 103 is supplied to the assembly maker, when the optical component piece is mounted on the actual machine while automatically recognizing the orientation and shape of the orientation flat by the automatic mounter. The orientation flat cannot be recognized, and as a result, the possibility of being discarded as a defective product increases.

Furthermore, since the conventional dicing line has a structure in which the center line 101a and the two outer lines 101b that are spaced apart in parallel with a predetermined gap are continuous in the longitudinal direction (non-cut structure), the step (j) In this case, it is impossible to sufficiently circulate the remover liquid not only in the dicing line but also in the orientation flat forming region. As a result, it is difficult to efficiently remove the second developing film 117. That is, most of the remover liquid flows only along the elongated recess corresponding to the substrate exposed portion 101c, and is difficult to flow to the orientation flat forming region side over the outer line 101b.
For this reason, in order to completely remove the resist residue on the orientation flat forming region, the entire optical substrate wafer must be immersed in the remover solution for a long time, resulting in a problem that productivity is lowered.

Patent Document 1 discloses a technique for forming a dummy pattern in order to prevent the occurrence of uneven coating of a solvent due to the influence of corners and steps at the intersection of dicing lines on a semiconductor wafer. When a dicing line is formed by this method, there is no disclosure of a technique for solving the problem that a resist film formed during the photolithography process remains as a residue on the exposed portion of the substrate.
JP-A-5-55371

  As described above, when mass-producing an optical component having a structure in which an optical thin film is formed on an optical substrate surface, a dicing line on an optical substrate wafer having a large area and an optical component individual region (orientation flat) divided by the dicing line are used. And a post-baked photo formed on the substrate surface immediately before the completion of the dicing line when an optical thin film formed on the optical piece region is used as a film material constituting the dicing line. When the resist film is continuously formed in the longitudinal direction, there is a problem that even if the resist film is immersed in the remover liquid, the photoresist films on the dicing line region and the orientation flat surface cannot be efficiently removed. .

  The present invention has been made in view of the above, and a plurality of optical component individual regions each provided with an optical thin film and a dicing line partitioning each individual region are manufactured on the optical substrate wafer surface by a photolithography technique. In the process of forming a dicing line composed of an optical thin film, a photoresist film formed on the wafer surface is continuously formed in the longitudinal direction, and / or the photoresist film is cured by post-baking. Due to the above, the removal of the resist film with the remover liquid requires a long time (soil of the remover liquid occurs in a short time and the service life is shortened), and the resist film with the remover liquid If the photoresist residue is left on the orientation flat surface as a result of insufficient removal, the percentage of defective optical components increases. And its object is to provide film structures of the dicing lines can solve the problem, and a method of manufacturing an optical component called.

In order to achieve the above object, an optical substrate wafer according to the present invention comprises a plurality of optical component individual regions.
An optical substrate wafer having a dicing line for partitioning, wherein the dicing line is
The optical thin film is formed on the individual region of the optical component, and is formed of the same material.
The optical thin film constituting the icing line is composed of a plurality of short optical thin films arranged discontinuously.
It is characterized in that form.
When the dicing line is made of the same material as the optical thin film on the optical component individual area, the residue of the photoresist film on the exposed surface of the substrate other than the dicing line and the optical thin film area, particularly on the orientation flat surface, during the photolithography process If remains, there is a risk that the defective product rate of the optical component is increased. In the present invention, since the short optical thin films are arranged discontinuously without using the dicing lines as continuous lines, the above-described problems can be solved all at once. Since there is an exposed substrate surface between each short optical thin film, the fluidity of the liquid when removing the photoresist film between the short optical thin films with the remover liquid, especially the flow to the optical component individual area in the photolithography process It becomes possible to improve the nature. For this reason, the photoresist on the orientation flat region can be removed in a short time without residue. Specifically, the conventional removal of the resist film, which takes 15 to 24 hours, can be completed in 2 hours.

In the optical substrate wafer according to the present invention, the dicing line is along a cutting center line.
And a predetermined substrate exposed part on each side of the center line in the width direction.
And a discontinuous outer line arranged in a row.
In the optical substrate wafer according to the present invention, the dicing line is along a cutting center line.
And a predetermined substrate exposed part on each side of the center line in the width direction.
And E-shaped discontinuous outer lines arranged opposite to each other.
The dicing line pattern to which the present invention can be applied is not limited, but when the present invention is applied to a dicing line composed of two parallel lines, each line is composed of a short optical thin film. Will be.

The optical substrate wafer according to the present invention is in a proper position along the outer peripheral edge in the individual region of the optical component.
An orientation flat is formed as a substrate exposed surface indicating the direction of the optical component.
To do.

In the optical substrate wafer according to the present invention, the optical component is deposited on the individual region of the optical component.
And a first optical thin film region that transmits light of a first wavelength band, and the first optical thin film region
Formed on the individual region of the optical component in a state of surrounding the outer periphery of the region, and the first wavelength band
A second optical thin film that transmits light in a region and light in a second wavelength band different from the first wavelength band
It characterized in that an opening filter with a region.

A method for manufacturing an optical component according to the present invention includes: an optical substrate wafer according to claim 5;
Optical component manufacturing method for obtaining the optical component by cutting and dividing along a grinding line
A first negative-type photoresist film is formed on the surface of the optical substrate wafer.
Resist film forming step and selecting the first photoresist film using a predetermined photomask
The second optical thin film region excluding the first optical thin film region and the
A first exposure step for exposing a dicing line region; and non-dew exposure of the first photoresist film.
A first developing step for removing the light portion and leaving only the exposed portion as the first developing film;
First optical thin film formation for forming a first optical thin film on an optical substrate wafer surface including a first developing film
Removing the first developing film and the first optical thin film on the first developing film.
A first developing film removing step for leaving only the first optical thin film on the optical substrate wafer surface;
Forming a negative second photoresist film on the surface of the optical substrate wafer including the first optical thin film.
A second resist film forming step for forming the film, and the second photoresist film is not post-baked.
Are selectively exposed using a predetermined photomask, whereby the first optical thin film on the first optical thin film is exposed.
2nd exposure process which exposes the whole 2 photoresist and a part of said dicing line area | region
And removing the non-exposed portion of the second photoresist film so that only the exposed portion is the second developing film.
A second development step to be left and a second development step on the optical substrate wafer surface including the second development film.
Second optical thin film forming step for forming optical thin film, second developing film, and second developing film
By removing the second optical thin film above, the second optical thin film is formed on the optical substrate wafer surface.
Each optical component having the first optical thin film region and the second optical thin film region is left to remain.
A second developing film removing step for forming an individual area and the dicing line area;
Dividing into optical component pieces by cutting along a dicing line consisting of two optical thin films
And a dividing step.

  When the second photoresist film is post-baked, it shrinks and becomes hard and becomes a residue with sticking on the substrate surface. In order to eliminate the residue, it must be immersed in the remover solution until the residue is completely removed, but it takes a long time (15 to 24 hours), and the productivity is remarkably lowered. In addition, when immersed for a long time, the remover is soiled by the resist. In the present invention, such a problem can be solved. In addition, the dicing line is not solid (not a continuous line in the longitudinal direction), and has a non-continuous structure in which a gap (substrate exposed surface) is formed along the longitudinal direction. The time required to remove is shortened (2 hours).

Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.
1A, 1B, and 1C are general views showing a configuration example of an optical substrate wafer (glass substrate wafer) having a film structure of a dicing line according to an embodiment of the present invention. It is a principal part enlarged view, and a partial enlarged view of a dicing line.
A linear dicing line 1 is formed in a lattice pattern on one surface of the glass substrate wafer W shown in FIG. 1A, and on the surface of each optical component individual region 2 defined by the dicing line 1. First and second optical thin film regions 6 and 7 are formed. A triangular orientation flat 3 having a substrate surface exposed by linearly chamfering one corner of the rectangular second optical thin film region 7 is formed between the dicing lines. By cutting the optical substrate wafer W along the dicing line 1, an aperture filter 5 as an optical component piece is obtained.

FIG. 1B is a partially enlarged view of the glass substrate wafer shown in FIG. 1A, and shows a state in which an aperture filter 5 as an optical component piece is connected via a dicing line 1. The aperture filter 5 has a configuration in which a first optical thin film region 6 and a second optical thin film region 7 having different properties are formed on the surface of the optical component individual region 2. For example, the circular first optical thin film 6 located at the center has a property of transmitting laser light in a 660 nm band for DVD recording / reproduction, and the second optical thin film located on the outer diameter side of the first optical thin film 6. The thin film 7 has the property of transmitting both 660 nm band laser light and 780 nm band laser light for CD recording and reproduction.
FIG. 1C is a partially enlarged view of the dicing line 1 shown in FIG. 1B, and the film constituting the dicing line 1 is formed at the same time as the second optical thin film 7 is formed. It is the same material as the optical thin film which comprises 2 optical thin films.

The characteristic configuration of the dicing line 1 of the present invention is that the second optical thin films constituting the dicing line are arranged discontinuously (intermittently), that is, intermittently as perforations. That is, the dicing line 1 of the present invention is formed simultaneously with the same material when forming an optical thin film on the optical component individual region 2, and the optical thin films constituting the dicing line are arranged discontinuously. Further, it is characteristic in that it is composed of a plurality of short optical thin films 20. A substrate surface 21 is exposed between each short optical thin film 20 constituting one dicing line.
The second optical thin film constituting the dicing line 1 has a thin center line 1a formed along the center line of the cutting width when cut by a dicing blade (not shown), and predetermined sides on both sides of the center line 1a. And a thick outer line 1b arranged in parallel with an interval. A substrate exposed portion 1c in which the glass substrate surface is exposed linearly is left between the center line 1a and each outer line 1b and outside the outer line 1b.

Each of the center line 1a and the outer line 1b constituting each dicing line 1 is cut into a perforation and formed discontinuously. The shape and size of each short optical thin film 20 and the size of the substrate surface 21 exposed between the short optical thin films 20 (the formation pitch of the short optical thin film) can be arbitrarily set. However, as will be described later, in consideration of the circulation of the liquid when the photoresist film is immersed in the remover liquid (circulation to the orientation flat 3 in the optical component individual region 2), the exposure formed on the lines 1a and 1b, respectively. Each of the substrate surfaces 21 is preferably configured (arranged linearly along the width direction) so as to have the same positional relationship as illustrated.
In addition, as a result of reducing the amount of photoresist film material used to form the dicing line as a whole, the amount of resist film removed by the remover liquid can be reduced, and the life of the remover liquid can be extended.
In this example, the dicing line is composed of three lines 1a, 1b, and 1b. However, the number of lines and the thickness of each line are not limited. Therefore, for example, as shown in FIG. 2 (a), one dicing line 1 may be configured discontinuously in the form of a perforation.

Moreover, although the shape of the short optical thin film 20 shown in FIG.1 (c) is linear, strip | belt shape, or a rectangular block shape, there is no restriction | limiting in the shape of each short optical thin film. For example, as in the modification of the dicing line structure shown in FIG. 2 ( c ), the short optical thin film 20 constituting the outer line 1b is formed in an E shape,
You may comprise in other arbitrary shapes. Even in this dicing line, since the exposed substrate surface 21 is located between the individual short optical thin films, the circulation property and fluidity along the substrate surface of the remover liquid for removing the photoresist film are improved, The resist on the orientation flat region 3 can be efficiently removed. Furthermore, the life of the remover solution can be extended as a result of the reduction in the amount of resist film material removed by the remover solution.

  When the dicing line 1 (1a, 1b) made of the same material as that of the second optical thin film 7 has a discontinuous structure, the substrate exposed portion 1c and the orientation flat are formed immediately before the dicing line 1 is formed. A photoresist film is formed on the formation region 3. When the entire glass substrate wafer W is immersed in the remover liquid to remove the photoresist film, the exposed substrate surface 21 between the short optical thin films 20 is shown as indicated by an arrow in FIG. Thus, the remover liquid is sufficiently circulated and supplied not only inside and outside the dicing line but also inside the optical component individual region 2. For this reason, the photoresist film in the dicing line region and the orientation flat region can be efficiently removed in a short time.

As described above, if a small amount of residue such as a photoresist film remains on the orientation flat surface, when the optical component is assembled to an actual machine by an automatic mounter, the direction of the optical component cannot be confirmed and it will be discarded as a defective product. However, according to the present invention, the occurrence of such defective products can be greatly reduced.
In particular, when the formed photoresist film is post-baked, the photoresist film is in a solidified state. Therefore, the time required for resist removal by immersing in the remover liquid is further increased, and productivity is increased. Although the life of the remover liquid is significantly reduced and the life is shortened, the present invention adopts a method that does not post-bake as described later, so that such a problem can be solved.

Next, as shown in FIG. 2 ( b ), the optical thin film constituting the dicing line is composed of a continuous belt-like film 25, and a hole-like substrate exposed portion (non-film portion) 26 is formed within the width of the belt-like film 25. The structure formed intermittently may be sufficient. Since the dicing line according to this embodiment has the substrate exposed portion 26 within the width of the belt-like film 25, the amount of the photoresist film used as a mask in the film forming process can be reduced, and as a result. The time required to remove the resist film on the dicing line region by the remover liquid can be shortened. Furthermore, the life of the remover solution can be extended as a result of the reduction in the amount of resist film material removed by the remover solution. In addition, it is possible to improve the circulatory property of the remover liquid by providing a notch in a part of the belt-like film 25 surrounding each substrate exposed part 26 to allow the substrate exposed part 26 to communicate with the outside of the belt-like film.

Next, FIGS. 3A to 3J are process diagrams showing a procedure (a manufacturing method of an aperture filter as an optical component) for forming a plurality of aperture filters and dicing lines on a glass substrate wafer.
First, in the first resist film forming step of FIG. 3A, a negative first photoresist film 11 is formed on one surface of the optical substrate wafer W. In the first exposure step (b), the first photoresist film 11 is pre-baked and post-baked, and then selectively exposed using a photomask 12 having a predetermined opening pattern. The second optical thin film region 7 and the dicing line region 1 except for the range of the first optical thin film region 6 are exposed. At this time, an orientation flat forming region (not shown) located between the second optical thin film region 7 and the dicing line region 1 is also exposed.

  In the first developing step of FIG. 3C, the non-exposed portion of the first photoresist film 11 is removed and only the exposed portion remains as the first developing film 13. At this time, the other surface of the glass substrate wafer W is in an exposed state except for the formation range of the first developing film 13. In the first optical thin film forming step (d), the first optical thin film 14 is formed on the entire optical substrate wafer surface including the upper surface of the first developing film 13. In the first developing film removing step (e), the first developing film 13 and the first optical thin film 14 on the first developing film are removed, whereby the first developing film 13 is removed from the surface of the optical substrate wafer W. Only the optical thin film 14 remains. That is, the optical thin film 14 is formed only on the exposed substrate surface in the step (c).

  In the second resist film formation step of FIG. 3F, a negative second photoresist film 15 is formed on the optical substrate wafer W surface including the upper surface of the first optical thin film 14. This process is characterized in that the second photoresist film 15 is pre-baked but not post-baked. This is because the shape retention of the second photoresist film 15 can be sufficiently maintained only by pre-baking. That is, in this step, it is sufficient that the second photoresist film is cured to such an extent that it can be easily removed by a remover liquid described later. In the second exposure step (g), the entire second photoresist film 15 (first) on the first optical thin film 14 is selectively exposed by using a photomask 16 having a predetermined opening pattern. Area corresponding to one optical thin film 6), a linear area serving as a substrate exposed portion 1c between the dicing lines 1a and 1b, an exposed substrate surface 21 between the short optical thin films 20, and an orientation flat area 3 (not shown). Exposure.

  In the second developing step of FIG. 3H, the non-exposed portion of the second photoresist film 15 is removed and only the exposed portion remains as the second developing film 17. In the second optical thin film forming step (i), the second optical thin film 18 is formed on the upper surface of the second developing film 17 and on the optical substrate wafer surface not covered with the second developing film 17. To do. In the second developing film removing step (j), the second developing film 17 and the second developing film 17 are removed with a remover solution (solvent) for removing the second developing film 17 (second photoresist film 15). By removing (lifting off) the second optical thin film 18 on the developing film 17, the second optical thin film 18 formed directly on the optical substrate wafer W surface remains.

The orientation flat 3 as the substrate exposed surface shown in FIGS. 1B and 1C is not shown in FIG. 3J, but is located further outside the one outer line 1b constituting the dicing line region 1. It is formed in the optical component individual region 2 by the same method as the exposed portion 1c in the dicing line region.
As a result of performing the above steps, each individual region 2 has an aperture filter provided with a first optical thin film 14 (6), a second optical thin film 18 (7), and an orientation flat (substrate exposed surface) 3, respectively. 5 is formed.
The dicing line region 1 includes the center line 1a, the outer line 1b, and the substrate exposed portion 1c shown in FIG. 1C, the short optical thin film 20 constituting the individual center line 1a and the outer line 1b, and the exposed substrate surface. 21. The center line 1a and the outer line 1b have a discontinuous configuration.

In the manufacturing method of the present invention, since the second photoresist film 15 is not post-baked in the second resist film forming step (f) to form the second developing film 17, the exposure step (g) is performed. , (H), the second developing film 17 does not shrink and strongly adhere to the wafer surface after the development. Therefore, in the second developing film removing step (j), the second developing film 17 (second photoresist film 15) can be removed easily and in a short time (about 2 hours) by the remover liquid (solvent). In addition, the residue of the second developing film (second photoresist film) 17 is not left on the orientation flat 3 formation region and the surface of the substrate exposed portion 1c.
For this reason, the optical component piece in a state where the resist residue is attached to the formation region of the orientation flat 3 is not supplied to the assembly maker, and the possibility of being discarded as a defective product is greatly reduced.

Furthermore, since the dicing line of the present invention has a configuration in which the short optical thin film 20 is intermittently arranged through the exposed substrate surface 21, the remover liquid is not only in the dicing line but also in the orientation flat 3 in the step (j). As a result, the second developing film 17 can be efficiently removed. That is, the remover liquid can flow to the orientation flat forming region side through the substrate surface 21 between the short optical thin films 20 and remove the second developing film 17 on the region without residue.
Needless to say, the above-described manufacturing procedure can also be applied to manufacturing a film structure of a dicing line according to another embodiment illustrated in FIGS. 2A, 2B, and 2C.

(A), (b) and (c) are general views showing a configuration example of an optical substrate wafer (glass substrate wafer) provided with a film structure of a dicing line according to an embodiment of the present invention, and a main part of the optical substrate wafer. It is an enlarged view and a partial enlarged view of a dicing line. (A) (b) And (c) is a figure which shows the film | membrane structure of the dicing line which concerns on other embodiment of this invention. (A) thru | or (j) are process drawings which show the procedure which forms a some aperture filter and dicing line on a glass substrate wafer. (A) is a general view of a glass substrate wafer, (b) is a partially enlarged view of this glass substrate wafer, and (c) is a further enlarged view of a part of the dicing line shown in (b). (A) thru | or (j) are explanatory drawings which show the procedure which forms a some aperture filter and dicing line on the glass substrate wafer shown in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Dicing line (area | region), 1a ... Center line, 1b ... Outer line, 1c ... Substrate exposure part, 2 ... Individual piece area | region, 3 ... Orientation flat (formation area | region), 5 ... Opening filter, 6 ... 1st optical thin film (Formation region), 7 ... second optical thin film (formation region), 12 ... photomask, 13 ... development film, 14 ... first optical thin film, 15 ... photoresist film, 16 ... photomask, 17 ... development film 18 ... second optical thin film, 20 ... short optical thin film, 21 ... exposed substrate surface, 25 ... band-like film, 26 ... substrate exposed portion.

Claims (6)

  An optical substrate wafer having a dicing line that divides individual regions of a plurality of optical components.
And
  The dicing line is made of the same material when an optical thin film is formed on the individual region of the optical component.
Formed by
  The optical thin film constituting the dicing line is a plurality of short optical thin films arranged discontinuously.
An optical substrate wafer comprising a film. The dicing line is
  A non-continuous center line arranged along the cutting center line;
  Discontinuous outer lines disposed on both sides of the center line in the width direction with a predetermined substrate exposed portion therebetween.
,
The optical substrate wafer according to claim 1, comprising:   The dicing line is
  A non-continuous center line arranged along the cutting center line;
  E-shapes arranged opposite to each other with predetermined substrate exposed portions on both sides in the width direction of the center line.
A non-continuous outer line of
The optical substrate wafer according to claim 1, comprising: In place along the outer periphery in the individual area of the optical component,
  An orientation flat as a substrate exposed surface indicating the direction of the optical component is formed.
The optical substrate wafer according to any one of claims 1 to 3. The optical component is
  First light that is formed on the individual region of the optical component and transmits light of the first wavelength band
Thin film area,
  A film is formed on the individual region of the optical component in a state of surrounding the outer periphery of the first optical thin film region,
And passes light in the first wavelength band and light in a second wavelength band different from the first wavelength band.
A second optical thin film region to be made,
An optical filter according to any one of claims 1 to 4, wherein the optical filter is provided with an aperture filter.
Substrate wafer.   The optical substrate wafer according to claim 5 is cut and divided along the dicing line.
By the manufacturing method of the optical component to obtain the optical component,
  A first resist for forming a negative first photoresist film on the surface of the optical substrate wafer
G film formation process,
  By selectively exposing the first photoresist film using a predetermined photomask
The second optical thin film region excluding the first optical thin film region and the dicing line region
A first exposure step of exposing
  The non-exposed portion of the first photoresist film is removed and only the exposed portion is used as the first developing film.
A first developing step to be left behind,
  A first optical thin film for forming a first optical thin film on an optical substrate wafer surface including the first developing film
A film forming process;
  By removing the first developing film and the first optical thin film on the first developing film,
A first developing film removing step for leaving only the first optical thin film on the optical substrate wafer surface;
  A negative second photoresist film is formed on the surface of the optical substrate wafer including the first optical thin film.
A second resist film forming step to form a film;
  The second photoresist film is selected using a predetermined photomask without post-baking.
Selectively exposing to expose the entire second photoresist on the first optical thin film;
A second exposure step of exposing a part of the dicing line region;
  The non-exposed portion of the second photoresist film is removed and only the exposed portion is used as the second developing film.
A second developing step to be left behind,
  A second optical thin film for forming a second optical thin film on the surface of the optical substrate wafer including the second developing film;
A film forming process;
  By removing the second developing film and the second optical thin film on the second developing film
, Leaving the second optical thin film on the optical substrate wafer surface, and the first optical thin film region and the first optical thin film region.
Each optical component having two optical thin film regions, and the dicing line region.
A second developing film removing step to be formed;
  An optical component piece is cut by cutting along a dicing line made of the second optical thin film.
A dividing step of dividing into pieces;
The manufacturing method of the optical component characterized by comprising.

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