JP4563756B2 - Electron beam drawing method and electron beam drawing apparatus - Google Patents

Description

  The present invention relates to an electron beam drawing method and apparatus, and more particularly to beam correction of an electron beam drawing apparatus that performs drawing using a plurality of beams.

  One of the techniques for improving the throughput, which is a disadvantage of the electron beam drawing apparatus, is a multi-beam drawing technique in which drawing is performed using a plurality of beams.

  This technique irradiates an aperture array having a plurality of apertures with an electron beam emitted from a single electron source to generate a plurality of electron beams. This is a method in which an arbitrary pattern is formed on a sample by raster-deflecting the plurality of electron beams at the same time, and simultaneously irradiating the sample with the plurality of beams individually on and off. Here, the range of raster deflection, that is, the range of drawing with one electron beam is the interval between a plurality of electron beams.

  Therefore, by performing raster deflection once, it is possible to draw an area of deflection range × number of beams. As a result, the throughput can be dramatically improved. Here, a range where one beam is drawn is called a μ field, and a range where a plurality of beams are drawn at once is called a subfield. The size of the μ field is determined by the range of raster deflection. The size of the subfield is the product of the μ field size and the number of beams.

  Here, it is necessary that the plurality of electron beams be arranged in a lattice pattern at the same interval on the sample surface. However, there is a case where the lattice shape does not become as designed due to a mechanical manufacturing error of the aperture array and a difference in the electron optical conditions accompanying therewith. In this case, when raster deflection is performed, there is a shift in the connection of the raster deflection range, that is, the range in which each of the plurality of electron beams is drawn (hereinafter referred to as μ field). As a result, there is a problem that a correct pattern is not drawn.

  Patent document 1 is mentioned as a method of solving this problem.

  In this method, a deflection margin region is added around the pattern drawn by each beam, and the drawing pattern is shifted within the deflection margin range, thereby improving the drawing pattern deviation due to the μ field connection deviation.

  A conventional example shown in FIG. 10 will be described.

  The electron beam emitted from the electron gun 109 is changed to generation of a plurality of beams, that is, a multi-beam by using the blanking array 110. At this time, on / off of each beam is controlled independently according to the drawing pattern. The generated multi-beam is irradiated onto the drawing sample 113 via the projection optical system 115. The irradiation position of the multi-beam is controlled by the deflector 111.

  The drawing pattern output from the CPU 105 is developed into a bitmap by the bitmap development circuit 101 and stored in the bitmap memory 102. The shift amount calculation circuit 106 outputs the shift amount of the μ field center position with respect to each beam to the bitmap shift circuit 103 based on the μ field center position shift amount measured in advance.

  The bitmap shift circuit 103 reads the bitmap data for each beam from the bitmap memory 102, adds a deflection margin area to the μ field according to the output of the shift amount control circuit 1002, and each beam falls within the range of the deflection margin area. Shift the center position of the pattern to be drawn. The output of the shift amount correction circuit 1002 is input to the irradiation amount control circuit 104 to control on / off of each beam.

  On the other hand, the deflection control circuit 1001 controls the beam irradiation position according to the subfield center position output from the CPU 105. Further, the deflection control circuit 1001 has a function of generating a raster deflection signal, and outputs a synchronization signal to the bitmap shift circuit 103 at the start of raster deflection. By this synchronization signal, raster deflection and beam on / off are synchronized to perform drawing.

  By operating as described above, it is possible to correct a lattice shape error of a plurality of beams and draw a correct pattern.

JP 2003-297732 A

  In the above conventional method, the lattice shape of the electron beam is corrected by shifting the drawing pattern. However, since the μ field shape is determined by the deflection shape of the raster deflection, if the μ field shape is distorted, it cannot be corrected.

  In particular, when performing overlay drawing, drawing is performed by matching the shape of the drawing pattern with the shape of the underlying pattern. At this time, it is necessary to change the shape of the μ field to an arbitrary shape.

  FIG. 4 shows an example of correction at the time of overlay drawing. FIG. 4 shows an example in which drawing is performed with a total of nine beams in the vertical and horizontal directions, and the base pattern is rotated.

  The correct correction result is obtained by rotationally correcting the entire drawing pattern in the same manner as the rotation of the background, as indicated by the solid line in FIG. FIG. 4B shows an example in which overlay correction is performed by a conventional method. In the conventional method, it is possible to correct the center coordinate which is the center position of each drawing pattern, but the μ field itself cannot be rotated.

  For this reason, rotational deviation in units of μ fields and connection deviations between μ fields occur, and a correct pattern cannot be drawn. In order to correct correctly, it is necessary to appropriately correct the center coordinates of the drawing pattern and the pattern shape.

  In view of the above problems, an object of the present invention is to provide a high-speed electron beam writing method with good drawing accuracy in which correction of deviation of a μ field forming a drawing pattern is appropriately performed.

  The present invention provides means for generating the plurality of electron beams arranged in a grid, means for converting a drawing pattern to be drawn into irradiation amount information of the electron beams, and means for individually turning on and off the plurality of electron beams And means for obtaining a correction amount for correcting the center position of the lattice shape drawn by the plurality of electron beams, and means for independently controlling the irradiation positions of the plurality of beams and obtaining the correction amount. A means for correcting the center position of the grating shape of the plurality of beams based on a correction amount, a means for deflecting the irradiation positions of the plurality of beams arranged in a lattice shape at the same time, and a deflection shape when deflecting all at once. Means for applying the correction, and drawing while correcting the lattice shape and the simultaneous deflection shape drawn by the plurality of beams.

  According to the present invention, it is possible to provide high-speed and highly accurate drawing using a plurality of beams.

  The Example concerning embodiment of this invention is described along a figure.

  First, an outline of a multi-beam type electron beam drawing apparatus will be described with reference to FIG.

  The electron beam 202 emitted from the electron gun 201 is converted into a plurality of substantially parallel electron beams by the condenser lens 203. The electron gun 201 includes a cathode, an anode, a grid (all not shown), and the like, and the crossover size can be changed by an applied voltage. This means is a means for generating a plurality of electron beams arranged in a lattice pattern including the condenser lens 203.

  The substantially parallel electron beam 206 separated by the aperture array 204 forms an electron gun crossover intermediate image 209 in the vicinity of the blanking stop 208 by the lens array 205 driven by the focus control circuit 220. The positions of these intermediate images 209 can be changed in the optical axis direction by changing the individual intensities of the lens array 205.

  Further, by applying a voltage to the blanking array 207, the intermediate image 209 is moved in the direction perpendicular to the optical axis and is blocked by the blanking stop 208, and on / off control can be performed for each separated electron beam 206. . At this time, an electron optical system composed of one element each of a lens array, a blanking array, and a blanking stop for one beam separated by the aperture array 204 is referred to as an element electron optical system. Details of the element electron optical system will be described later.

  These intermediate images 209 are projected onto the sample 217 on the sample stage 218 by the projection optical system including the first projection lens 210 and the second projection lens 214. The projection optical system is driven by the lens control circuit 222 so as to share the back focal position of the first projection lens 210 and the front focal position of the second projection lens 214. This arrangement is called a symmetric magnetic doublet configuration and allows projection with low aberrations.

LaB _{6, which} is most frequently used as an electron source for electron beam drawing, has an electron gun crossover size of about 10 μm. In order to make the beam size on the sample 10 nm, it is necessary to reduce it to 1/1000.

  Now, assuming that the magnification of the lens array is 1/20, the projection optical system needs a magnification of 1/50. This may be difficult to achieve with a set of projection lenses. At that time, using two sets of projection lenses, for example, the first stage is set to 1/10 and the second stage to 1/5. A projection lens is installed between the blanking stop 208 and the first projection lens 210 shown in FIG. This projection lens also uses a symmetric magnetic doublet configuration.

  At this time, the plurality of electron beams constituting each intermediate image 209 are collectively deflected and positioned by the main deflector 213 and the sub deflector 215. For example, the main deflection 213 uses a wide deflection width, and the sub deflection 215 uses a narrow deflection width. The main deflector 213 is an electromagnetic type, and the sub deflector 215 is an electrostatic type. Defocus caused by deflection aberration generated when the deflector is operated to deflect the beam is corrected by the dynamic focus corrector 211, and deflection astigmatism generated by deflection is corrected by the dynamic astigmatism corrector 212. Both the focus corrector and the astigmatism corrector are composed of coils.

  Drawing is performed by moving the sample 217 mounted on the sample stage 218. A Faraday cup 219 is mounted on the sample stage and has knife edges in the X direction and the Y direction. The Faraday cup 219 operates in conjunction with a stage control circuit 225 including a coordinate measuring function (not shown) such as a laser interferometer, and deflects an electron beam on the sample or synchronizes with the movement of the Faraday cup 219. Can be measured to measure the position of the electron beam on the sample consisting of each intermediate image.

  Also, the position of the electron beam can be measured by a method in which the position measurement mark 227 is attached on the sample stage, the signal is scanned by scanning the position measurement mark 227, and the signal processing circuit 224 processes the signal. The shift amount of each beam is obtained based on the measured beam position.

  Drawing is performed by synchronizing on / off of the beam by the dose control circuit 221 based on the pattern data stored in the CPU 226 and the deflection operations of the main deflector 213 and the sub deflector 215 driven by the deflection control circuit 223. At this time, the sample stage 218 moves through the stage control circuit 225 by continuous movement or step movement.

  The CPU 226 controls all of the above series of operations.

  Next, the drawing operation of the electron beam drawing apparatus will be described with reference to FIG.

  A pattern to be drawn on a sample such as a wafer is divided into strip-shaped stripes 301 having a width within a range that can be deflected by the main deflector 213 as shown in FIG. As shown in FIG. 3B, the stripe 301 is divided into main fields 303 which are divided in units of subfields 302 having the size of the arrangement of electron beams on the sample consisting of each intermediate image. The electron beams 304 (64 beams in FIG. 3B) on each sample in the sub-field are deflected by the sub-deflector 215 to draw the entire sub-field 302.

  As shown in FIG. 3C, a region in which one electron beam of the subfield 302 is responsible for drawing is a microfield 305, and the inside of the microfield 305 is a pixel 306 having a size substantially equal to the diameter of the electron beam 304. The raster deflection operation is performed in order from the lower left corner.

  All the electron beams in the subfield 302 are deflected by the subdeflector 215 at a time. A pattern in the subfield is drawn by turning on and off each electron beam in synchronization with the deflection in pixel units.

  After the drawing of one subfield is completed, the main deflector 213 performs deflection by the subfield width. The next subfield is drawn in the same manner as described above. Thereafter, drawing of the sub-field is performed in the same manner, and when drawing is completed up to the deflection range of the main deflector 213, that is, the right end of the main field, the drawing of the next main field is started. At this time, the sample stage is continuously moved. The size of the field and stripe is, for example, 20 nm for one pixel, 4 μm square for a microfield, 256 μm square (corresponding to 64 × 64 beams) for a subfield, 256 μm × 4 mm for a main field, and 4 mm for a stripe width. is there.

  Next, a block circuit diagram will be described with reference to FIG. This block circuit diagram corresponds to FIG. 10 of the conventional example, and shows the entire electron beam drawing apparatus.

  The drawing pattern divided for each beam stored in the CPU 105 is developed or converted into bitmap data, which is electron beam irradiation amount (beam on / off time) information, by the bitmap development circuit 101 and is converted into the bitmap memory 102. Stored in The bitmap development circuit 101 is referred to as means for converting a drawing pattern to be drawn into electron beam irradiation amount information.

  A misalignment amount at the center of each μ field 305 and an alignment correction coefficient which is information on the background shape are measured in advance and stored in the deflection control circuit 106. The deflection control circuit 106 calculates a necessary main deflection amount from the center coordinates of the subfield 302 output from the CPU 105 and the sample table coordinates output from the sample table control 107. The main deflection amount is the difference between the subfield center coordinates and the sample table coordinates.

  The calculated main deflection amount is corrected for deflection distortion, and then output to the deflector 111 to deflect the beam to the subfield center position. Further, the correction amount of the center coordinate of the drawing pattern of each beam is calculated using the correction coefficient together with the main deflection amount, and is output to the bitmap shift circuit 103. Further, the shape of the μ field at that time, that is, the deflection shape of the raster deflection is calculated.

  At this time, the raster deflection range is a range to which a deflection margin region for shifting the drawing pattern of each beam is added. The size of the deflection margin area is determined from the shift amount of the drawing pattern. Thereafter, a synchronization signal is output to the bitmap shift circuit 103 and a raster deflection signal corresponding to the calculated raster deflection shape is generated and output to the deflector 111. Drawing is performed by deflecting a plurality of beams all at once by the deflector 111.

  The bitmap shift circuit 103 corrects the center position of each beam output from the deflection control circuit 106, that is, the irradiation position of the beam, with respect to the bitmap data output from the bitmap development circuit 101.

  This corrects the lattice shape of the plurality of beams. The bitmap data whose lattice shape has been corrected by the bitmap shift circuit 103 is triggered by the synchronization signal from the deflection control circuit 106, the bitmap data is read from the bitmap memory 102, and each beam output from the deflection control circuit 106 is read out. The bitmap data is shifted according to the correction amount of the drawing pattern center coordinate, the center coordinate shift of the drawing pattern is corrected, and output to the dose control circuit 104.

  The dose control circuit 104 generates a blanking signal for controlling on / off of the beam in accordance with the shifted bitmap data, outputs it to the blanking array, and draws a pattern.

  FIG. 5 shows a raster deflection signal, a blanking signal, and a synchronization signal.

  The raster deflection is performed with priority in the X direction as shown in FIG. The X deflection signal is started with the synchronization signal output from the deflection control circuit 106 as a trigger, and when one scan in the X direction is completed, the deflection position in the Y direction is updated by the Y deflection signal.

  On the other hand, the blanking signal output from the dose control circuit 104 starts to be output with the synchronization signal as a trigger, and updates the blanking signal in accordance with the update period of the X deflection signal. By doing so, the raster deflection and the blanking signal are synchronized, and the pattern is drawn.

  Here, the shape of the μ field mentioned above, that is, the deflection shape of the raster deflection will be described.

  The deflection shape of the raster deflection is changed by changing the inclination of the raster deflection scanning line. That is, when the scanning line is inclined upward with respect to the horizontal reference, the deflection shape of the raster deflection is inclined so as to rotate and rotate in the counterclockwise direction, and conversely, when the scanning line is inclined downward with respect to the horizontal reference. The deflection shape of the raster deflection is inclined so as to rotate in the clockwise direction as a whole. In this way, the inclination correction of the deflection shape of the raster deflection is performed.

  The inclination correction of the deflection shape of the raster deflection is realized by gradually decreasing / gradually increasing the potential of the Y deflection signal in a section where one scan of the X deflection signal is performed.

  Next, the operation relating to correction will be described in more detail with reference to FIG.

  Here, as shown in FIG. 6, it is assumed that a superposition drawing is performed using four beams, and a case where a clockwise rotational deviation is corrected as indicated by a one-dot chain line is described as an example.

  The solid line in FIG. 6A indicates the range of the drawing pattern, the black circle indicates the raster deflection center coordinates before correction, and the white circle indicates the center coordinates of the drawing pattern after correction. At this point, the μ field range is equal to the drawing pattern range.

  The distortion shape of the ground pattern drawn on the wafer or mask to be drawn is measured in advance and is given as a function of the drawing coordinates (Xc, Yc) as shown in Equation 1.

式１

Formula 1

  Here, Xc and Yc are arbitrary drawing coordinates in the coordinate chip with the center of the chip to be drawn as the origin, dXc and dYc are correction amounts for the respective drawing coordinates, and X1 to X3 and Y1 to Y3 are alignment correction coefficients. is there. The corrected drawing coordinates are (Xc + dXc, Yc + dYc). Here, the equation is for a coordinate system with the chip center as the origin.

  The alignment correction is performed in two stages: the center coordinates of the subfield and the pattern in the subfield. In order to perform correction in the sub-field, a correction formula in which the coordinate system with the sub-field center as the origin is replaced is necessary. The correction formula is shown in Formula 2.

式２

Formula 2

  Here, Xs and Ys are arbitrary drawing coordinates in a coordinate chip with an arbitrary subfield center as the origin, dXs and dYs are correction amounts for the respective drawing coordinates, and x1 to x3 and y1 to y3 are alignment correction coefficients. .

  Here, the shape of the example of FIG. 6A is expressed by the following correction coefficient expression 3.

式３

Formula 3

  Further, the coefficient replaced with the coordinate system of the center of the subfield is expressed by Equation 4.

式４

Formula 4

  The alignment correction is first performed on the subfield center coordinates. This calculates the correction amount of the center coordinates of each subfield, that is, the deflection coordinates of the main deflection according to the equation 1, and corrects the subfield center coordinates. The corrected subfield center coordinates are output to the main deflector that has performed deflection distortion correction. Also, a correction coefficient for correction in the subfield is calculated.

  Next, an alignment correction method in the subfield will be described.

  The alignment correction in the subfield is performed by shifting the center coordinate of the drawing pattern for each beam and correcting the deflection shape of the raster deflection.

  FIG. 7A shows an X deflection signal for raster deflection and a blanking signal for each beam when there is no correction. Here, since the size of the drawing pattern is equal to the size of the μ field, the blanking signal of each beam starts to be output simultaneously with the synchronization signal as a trigger, and is output over the entire deflection range. Further, the X deflection signal deflects a range equal to the size of the μ field.

  First, a method for correcting the drawing pattern center coordinates will be described.

  The correction amount of the drawing pattern center coordinate can be obtained by Equation 2.

  By shifting the raster deflection timing and the blanking signal output start timing by an amount corresponding to this correction amount, it is possible to apparently shift the center coordinates of the raster deflection.

  However, since the raster deflection range, that is, the size of the μ field and the range in which the blanking signal is output are equal, there is a range in which the pattern cannot be drawn by the amount of shifting the output start position. In order to avoid this, the size of the μ field is increased by an amount for correcting the drawing pattern center coordinates.

  The correction amount in the example of FIG. 6A can be obtained by using the correction coefficient of equation 4 as the equation 2 for the center coordinates of the drawing pattern. For example, the correction amount with (X1, Y1) as the center coordinate of the drawing pattern of the beam 1 is (βX1, −βY1). FIG. 7B shows an operation waveform when the center coordinates of the drawing pattern are corrected. The range indicated by the arrow is the μ field range before correction, and the portion before and after it is an enlarged portion. A drawing example at this time is shown in FIG. Here, the dotted line indicates the μ field. FIG. 6C shows the positional relationship between the μ field and the drawing pattern for each beam.

  Next, μ field shape correction will be described.

  The μ field shape correction is performed by correcting the raster deflection waveform. The correction amount at this time is obtained by Equation 2. Here, the values of Xs and Ys in Equation 2 are the deflection coordinates of raster deflection. Here, a case where correction is performed using the correction coefficient of Expression 4 is considered. When the correction coefficient of Equation 4 is used, the correction amount of the X deflection coordinate becomes a larger correction amount as the Y deflection coordinate becomes larger, and the correction amount of the Y deflection coordinate becomes a smaller correction amount as the X deflection coordinate becomes larger.

  The correction amount at the origin of raster deflection is zero. FIG. 8 shows a raster deflection waveform corrected using the correction coefficient of Equation 2. The result of drawing using the deflection waveform shown in FIG. 8 is shown in FIG. As a result of correcting the raster deflection waveform by Expression 2, the μ field shape can be matched with the shape of the base pattern. As a result, a correct drawing result can be obtained, and high-precision overlay drawing can be performed.

  Next, the configuration and operation of the deflection control circuit will be described with reference to FIG.

  The deflection control circuit is a main part of the present invention including functions relating to correction.

  A portion surrounded by a dotted line in FIG. 9 is a deflection control circuit.

  First, prior to drawing, the center coordinates of the subfields arranged in the drawing order are transferred from the CPU 105 to the buffer memory 901. In addition, a correction coefficient for overlay drawing and the size of a drawing pattern drawn with one beam are set in the arithmetic circuit 902 as parameters.

  After these settings are completed, an activation command is issued from the CPU 105 to the controller 906. The controller 901 has a function of controlling the operation sequence of the deflection control circuit and outputting a synchronization signal to the bitmap shift circuit 103.

  When the controller 906 is activated, the arithmetic circuit 902 reads the subfield center coordinates from the buffer memory 901 in accordance with a command from the controller 906. A necessary main deflection amount is calculated from the read subfield center coordinates, and after overlay correction is performed, it is output to the main deflection correction circuit 905.

  The main deflection correction circuit 905 performs distortion correction accompanying the deflection of the main deflection, outputs the corrected deflection amount to the main deflector 907, and deflects the beam to the subfield center coordinates. Further, the arithmetic circuit 902 calculates the drawing pattern shift amount for each beam and outputs it to the bitmap shift circuit 103.

  Further, the arithmetic circuit 902 calculates the μ field enlargement amount and raster deflection correction amount from the drawing pattern shift amount, and outputs them to the raster deflection arithmetic circuit 904. At this time, the drawing pattern shift amount and μ feed correction amount vary depending on the deflection amount of the main deflection and the height of the drawing sample surface.

  Therefore, the arithmetic circuit 902 calculates the correction amount in consideration of the deflection amount of the main deflector and the height of the drawing sample surface. After the arithmetic circuit 902 finishes setting the output data for each circuit, it outputs a synchronization signal to the bitmap shift circuit 103 and the raster deflection arithmetic circuit 904. The raster deflection calculation circuit 904 starts the operation with the synchronization signal as a trigger, and outputs a raster deflection coordinate calculation to the raster deflection correction circuit 905.

  A raster deflection correction arithmetic circuit 905 performs raster deflection by correcting distortion of raster deflection and outputting a correction result to the sub deflector 908. The bitmap shift circuit 103 outputs blanking data shifted in accordance with the drawing pattern shift amount using the synchronization signal from the arithmetic circuit 902 as a trigger.

  In the drawing method of the embodiment described above, the range of the subfield is drawn at a time, so that the shape of the subfield can be regarded as the shape of one large area beam. The shape of the subfield has distortion depending on the deflection amount of the main deflector due to the characteristics of the electron optical system. Subfield distortion depends on the height of the sample surface.

  With respect to this distortion, it is possible to perform highly accurate correction by combining correction of the drawing pattern center coordinates of each beam and the raster deflection shape as in the above-described embodiment.

  When subfield distortion correction is performed, height information on the sample surface at each subfield center coordinate is added to the input data of the arithmetic circuit 902 in FIG. 9 to correct the drawing pattern shift amount and raster deflection. Try to calculate the amount.

1 is an overall block circuit diagram according to an embodiment of the present invention. FIG. BRIEF DESCRIPTION OF THE DRAWINGS The figure which concerns on the Example of this invention and shows the outline | summary of the electron beam drawing apparatus of a multi-beam system. The figure which concerns on the Example of this invention and shows drawing operation | movement. The figure which shows the example of correction | amendment by a conventional system. The figure which concerns on the Example of this invention, and shows the relationship between a raster deflection | deviation and a blanking signal. The figure which concerns on the Example of this invention and shows the example of correction | amendment. The figure which concerns on the Example of this invention and shows the operation | movement regarding correction | amendment. The figure which concerns on the Example of this invention and shows the operation | movement regarding correction | amendment. The figure which concerns on the Example of this invention and shows a deflection | deviation control circuit. The whole block circuit diagram concerning a prior art example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 101 ... Bitmap expansion circuit, 102 ... Bitmap memory, 103 ... Bitmap shift circuit, 104 ... Irradiation amount control circuit, 105 ... CPU, 106 ... Deflection control circuit, 107 ... Sample stage control circuit, 109 ... Electron source, 110 DESCRIPTION OF SYMBOLS ... Blanking array, 111 ... Deflector, 112 ... Sample, 113 ... Sample stand, 201 ... Electron gun, 202 ... Electron beam, 203 ... Condenser lens, 204 ... Aperture array, 205 ... Lens array, 206 ... Separated electrons Beam, 207 ... Blanking array, 208 ... Blanking stop, 209 ... Intermediate image, 210 ... First projection lens, 211 ... Dynamic focus corrector, 212 ... Dynamic astigmatism corrector, 213 ... Main deflector, 214 ... second projection lens, 215 ... sub-deflector, 216 ... electron detector, 217 ... sample, 218 ... sample stage, 2 DESCRIPTION OF SYMBOLS 9 ... Faraday cup, 220 ... Focus control circuit, 221 ... Irradiation amount control circuit, 222 ... Lens control circuit, 223 ... Deflection control circuit, 224 ... Signal processing circuit, 225 ... Stage control circuit, 226 ... CPU, 227 ... Position measurement 301, stripe, 302 ... subfield, 303 ... main field, 304 ... electron beam, 305 ... microfield, 306 ... pixel, 901 ... buffer memory, 902 ... arithmetic circuit, 903 ... main deflection correction circuit, 904 ... Raster deflection arithmetic circuit, 905... Raster deflection correction circuit, 906... Controller, 907... Main deflector, 908 .. sub deflector, 1001 .. deflection control circuit, 1002.

Claims (6)

In an electron beam drawing method for drawing using a plurality of electron beams,
Means for generating the plurality of electron beams arranged in a lattice pattern;
Means for converting a drawing pattern to be drawn into irradiation amount information of the electron beam;
Means for individually turning on and off the plurality of electron beams;
Means for obtaining a correction amount for correcting a center position of a lattice shape drawn by the plurality of electron beams;
Means for independently controlling the irradiation positions of the plurality of beams and correcting center positions of the lattice shapes of the plurality of electron beams based on a correction amount received from the means for obtaining the correction amount;
Comprising means for deflecting the irradiation positions of the plurality of electron beams arranged in a lattice at the same time, and means for correcting the inclination of the deflection shape when deflecting all at once,
The lattice shape and the deflection shape drawn by the plurality of electron beams are changed according to the deflection amount and deflection distortion correction amount of the main deflection and the height of the sample surface, and the center position of the lattice shape and the deflection shape are changed. An electron beam drawing method characterized by drawing while correcting. In an electron beam drawing method for drawing using a plurality of electron beams,
Means for generating the plurality of electron beams arranged in a lattice pattern;
Means for converting a drawing pattern to be drawn into irradiation amount information of the electron beam;
Means for individually turning on and off the plurality of electron beams;
Means for obtaining a correction amount for correcting a center position of a lattice shape drawn by the plurality of electron beams;
Means for correcting the irradiation position was controlled independently, and the center position of the grating pattern of said plurality of electron beams on the basis of the correction level received from the means for determining the correction amount of the plurality of electron beams,
Comprising means for deflecting the irradiation positions of the plurality of electron beams arranged in a lattice at the same time, and means for correcting the inclination of the deflection shape when deflecting all at once,
The alignment correction coefficient, which is information on the position of the center of the lattice shape of the plurality of electron beams and the background shape drawn on the wafer or mouse to be drawn, is measured in advance, and the center coordinates of the drawing pattern of each electron beam are measured. An electron beam drawing method, wherein the drawing is performed while correcting the center position of the lattice shape and the deflection shape by calculating a correction amount using a main deflection amount matching correction coefficient . The electron beam drawing method according to claim 2 , wherein
An electron beam writing method, wherein the lattice shape and the deflection shape drawn by the plurality of electron beams are changed in accordance with a deflection amount of a main deflection, a deflection distortion correction amount, and a height of a sample surface. In an electron beam drawing apparatus that performs drawing using a plurality of electron beams,
A beam generation unit including an electron gun or a blanking array that generates a plurality of beams arranged in a lattice;
A pattern development unit that converts a drawing pattern to be drawn into beam on / off information;
A blanking control unit that individually turns on and off the plurality of beams according to the on / off information of the beam converted by the pattern development unit;
A deflection control unit that controls the irradiation position by simultaneously deflecting the plurality of beams turned on and off by the blanking control unit;
The deflection control unit includes means for correcting a tilt when the plurality of beams are deflected all at once, and the deflection control unit has a lattice shape drawn by the plurality of electron beams by a synchronous operation with the blanking control unit. Calculate the correction amount to correct the center position,
The lattice shape and the deflection shape drawn by the plurality of beams are changed according to the deflection amount of the main deflection and the deflection distortion correction amount, and the height of the sample surface,
According to the correction amount, the blanking control unit corrects the center position of the grating shape of the plurality of beams with respect to a deflection signal, and the deflection control unit corrects the deflection shape for deflecting the plurality of beams. An electron beam drawing apparatus that performs drawing while performing the drawing. In an electron beam drawing apparatus that performs drawing using a plurality of electron beams,
A beam generation unit including an electron gun or a blanking array that generates a plurality of beams arranged in a lattice;
A pattern development unit that converts a drawing pattern to be drawn into beam on / off information;
A blanking control unit that individually turns on and off the plurality of beams according to the on / off information of the beam converted by the pattern development unit;
A deflection control unit that controls the irradiation position by simultaneously deflecting the plurality of beams turned on and off by the blanking control unit;
Means for correcting a tilt in a deflection shape when the plurality of electron beams are deflected all at once, and the deflection control unit is configured to perform a center operation of a lattice shape of the plurality of electron beams by a synchronization operation with the blanking control unit. The alignment correction coefficient, which is the information on the position of the image and the background shape drawn on the wafer or mouse to be drawn, is measured in advance, and the correction amount of the center coordinates of the drawing pattern of each electron beam is set as the main deflection amount adjustment correction coefficient. And calculating a correction amount for correcting the center position of the lattice shape drawn by the plurality of electron beams,
According to the correction amount, the blanking control unit corrects the center position of the grating shape of the plurality of beams with respect to a deflection signal, and the deflection control unit corrects the deflection shape for deflecting the plurality of beams. An electron beam drawing apparatus that performs drawing while performing the drawing. 6. The electron beam writing apparatus according to claim 5, wherein the lattice shape and the deflection shape drawn by the plurality of beams are changed according to a deflection amount of a main deflection, a deflection distortion correction amount, and a height of a sample surface. An electron beam lithography apparatus.

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