JP4560307B2 - Group III nitride crystal manufacturing method - Google Patents

Description

The present invention relates to crystal manufacturing how the III-nitride.

  At present, InGaAlN-based (Group III nitride) devices used as purple-blue-green light sources are mainly formed on a sapphire or SiC substrate by MO-CVD (metal organic chemical vapor deposition) or MBE ( It is produced by crystal growth using a molecular beam crystal growth method) or the like. As a problem when sapphire or SiC is used as a substrate, there is an increase in crystal defects due to a large difference in thermal expansion coefficient and difference in lattice constant from group III nitride. For this reason, there is a problem that the device characteristics are poor, for example, it is difficult to extend the life of the light emitting device, or the operating power is increased.

  Furthermore, in the case of a sapphire substrate, since it is insulative, it is impossible to take out the electrode from the substrate side as in the conventional light emitting device, and it is necessary to take out the electrode from the nitride semiconductor surface side where the crystal has grown. . As a result, there is a problem that the device area becomes large, leading to high costs.

  In addition, the group III nitride semiconductor device fabricated on the sapphire substrate is difficult to be separated by cleaving, and it is not easy to cleave the resonator end face required for the laser diode (LD). For this reason, at present, resonator end faces are formed by dry etching, or resonator end faces are formed in a form close to cleavage after polishing the sapphire substrate to a thickness of 100 μm or less. Also in this case, it is impossible to easily separate the resonator end face from the conventional LD and the chip in a single process, resulting in a complicated process and an increase in cost.

  In order to solve these problems, a GaN substrate is desired, and a method of forming a thick film on a GaAs substrate or a sapphire substrate using the HVPE method (hydride vapor phase epitaxial growth method) and removing these substrates later. Are proposed in Patent Document 1 (first prior art) and Patent Document 2 (second prior art).

In Patent Document 3 (third prior art), a GaN or AlN thin film is deposited on a sapphire, GaAs, GaP or Si substrate, and then sodium azide (NaN ₃ ) and metal Ga are used on the substrate. It has been proposed to grow GaN crystals.

Although GaN free-standing substrates can be obtained by these methods, basically different types of materials such as GaAs and sapphire are used as the substrate. Therefore, due to differences in thermal expansion coefficients and lattice constants between group III nitrides and substrate materials. High density crystal defects remain. Even if this defect density can be reduced, it is 10 ⁵ to 10 ⁶ cm ⁻² . In order to realize a high-performance (high output, long life) semiconductor device, it is necessary to further reduce the defect density.
Japanese Patent Laid-Open No. 2000-12900 JP 2003-178984 A JP 2000-327495 A

  The present invention is a group III nitride crystal growth capable of producing a large-sized, large-area, high-quality group III nitride crystal having a practically reduced size and having a reduced defect density. It is an object to provide a method and III-nitride crystals and semiconductor devices.

In order to achieve the above object, according to the first aspect of the present invention, a flux and a substance containing at least a group III metal form a mixed melt in a reaction vessel, and the mixed melt and a substance containing at least nitrogen are used. In the method for producing a group III nitride crystal by a flux method in which a group III nitride composed of a group III metal and nitrogen is grown, the amount of nitrogen dissolved in the mixed melt is increased, and the crystal is formed on the substrate. The method includes a step of forming a plurality of group nuclei of group III nitride by multinuclear growth without inheriting a crystal axis of the substrate, and a step of expanding the plurality of crystal nuclei.

  Here, the flux referred to in the present invention refers to a substance that can be formed at a lower temperature and a lower pressure than a normal reaction temperature and pressure in which a group III nitride is formed only from a group III metal and nitrogen. As the flux, alkali metals such as Li, Na, and K, alkaline earth metals, or a mixture thereof can be used.

The invention described in claim 2 is the method for producing a group III nitride crystal according to claim 1, wherein the group III nitride crystal grown by the group III nitride crystal growth method is planarized, and thereafter the group III nitride crystal is planarized. The method includes a step of growing a group nitride crystal again.

According to the first aspect of the present invention, the flux and the substance containing at least a group III metal form a mixed melt in the reaction vessel, and the group III metal is formed from the mixed melt and the substance containing at least nitrogen. In a group III nitride crystal growth method by a flux method for crystal growth of a group III nitride composed of nitrogen (hereinafter referred to as a flux method), the amount of nitrogen dissolved in the mixed melt is controlled to obtain a desired value. Since the group III nitride crystal is grown in the growth mode, it is possible to grow a high-quality group III nitride crystal having a reduced defect density as compared with the conventional case under the desired growth mode. According to the first aspect of the present invention, the amount of dissolved nitrogen in the mixed melt is increased to form a plurality of group III nitride nuclei on the substrate, and then the plurality of crystal nuclei are expanded. Therefore (ie, because multinuclear growth is performed), it is possible to produce a large-sized, large-area, high-quality group III nitride crystal with a practically reduced defect density even more than before. .

According to the invention of claim 2 , the group III nitride crystal grown by the method for producing a group III nitride crystal of claim 1 is flattened, and then the group III nitride crystal is grown again. Thus, a large-sized, large-area high-quality group III nitride crystal having a practical size with a reduced defect density can be produced.

  Hereinafter, the best mode for carrying out the present invention will be described.

In the present invention, in a reaction vessel, a flux and a substance containing at least a group III metal form a mixed melt, and the mixed melt and a substance containing at least nitrogen constitute the group III metal and nitrogen. The present invention relates to a method for producing a group III nitride crystal by a flux method for crystal growth of a group III nitride (hereinafter referred to as a flux method).

  In addition, the flux said by this invention refers to the substance which can be formed at low temperature and low pressure rather than the normal reaction temperature and pressure which a group III nitride forms only from a group III metal and nitrogen. As the flux, alkali metals such as Li, Na, and K, alkaline earth metals, or a mixture thereof can be used.

FIG. 1 is a diagram showing a configuration example of a group III nitride crystal production apparatus by a flux method. The group III nitride crystal production apparatus of FIG. 1 has a second reaction vessel 113 inside the first reaction vessel 101, and between them (inside the first reaction vessel 101 and outside the second reaction vessel 113). ) Is provided with a heating device 106 so that the group III nitride can be controlled to a temperature at which crystal growth is possible. A mixed melt holding container 102 is installed inside the second reaction container 113, and Ga as a substance containing at least a group III metal and Na as a flux are contained in the mixed melt holding container 102. The mixed melt 103 comprised from these is accommodated. Further, a lid 109 is provided on the mixed melt holding container 102, and there is a slight gap between the mixed melt holding container 102 and the lid 109 so that gas can enter and exit.

  In addition, a thermocouple 112 for detecting the temperature of the mixed melt holding container 102 is installed in the second reaction container 113. The thermocouple 112 is connected to the heating device 106 so that temperature feedback control is possible.

  In the example of FIG. 1, nitrogen gas is used as the substance containing at least nitrogen. Nitrogen gas is supplied from the nitrogen gas container 107 installed outside the first reaction container 101 to the space 108 in the first reaction container 101 and the second reaction container 113 through the gas supply pipe 104. I can do it. In order to adjust the pressure of the nitrogen gas, a pressure adjustment valve 105 is provided. Further, a pressure sensor 111 for detecting the pressure of nitrogen gas in the reaction vessels 101 and 113 is installed. At this time, feedback is applied from the pressure sensor 111 to the pressure regulating valve 105 so that the pressure in the first reaction vessel 101 and the pressure in the second reaction vessel 113 are substantially the same pressure and become a predetermined pressure. It has become.

When a gallium nitride (GaN) crystal is grown using a crystal manufacturing apparatus of the flux method as shown in FIG. 1, the inventor of the present application determines that the amount of nitrogen dissolved in the mixed melt 103 (nitrogen dissolution amount) is polynuclear. We have found that there is a range of conditions for growth and epitaxial growth (epi growth).

  The multinuclear growth here is a growth mode in which a plurality of crystal nuclei of group III nitride are generated and each of the plurality of crystal nuclei grows (expands). In multinuclear growth, group III nitrides grow without depending on the characteristics of the crystal axes of the substrate. On the other hand, epitaxial growth is a growth mode in which a group III nitride crystal grows while taking over the crystal axis of the underlying substrate.

  FIG. 2 is a diagram showing a multinuclear growth condition region and an epi growth condition region when the nitrogen pressure and the amount ratio of Na and Ga in the mixed melt are used as parameters. The growth temperature is 775 ° C.

  In FIG. 2, it can be seen that the more the nitrogen pressure is increased or the more the Na amount ratio is, the easier the group III nitride is to grow multinuclear. That is, it is understood that the group III nitride grows multinuclear as the amount of dissolved nitrogen in the mixed melt increases.

  On the other hand, it can be seen from FIG. 2 that the group III nitride is more easily epitaxially grown as the nitrogen pressure is reduced or the Na amount ratio is lowered. That is, it can be seen that the group III nitride grows epitaxially as the amount of nitrogen dissolved in the mixed melt decreases.

  This invention is made | formed based on the said knowledge by the inventor of this application.

(First form)
In the first embodiment of the present invention, a flux and a substance containing at least a group III metal form a mixed melt in a reaction vessel, and the group III metal and nitrogen are formed from the mixed melt and a substance containing at least nitrogen. In a method for producing a group III nitride crystal by a flux method for growing a group III nitride composed of (i.e., a flux method), the amount of nitrogen dissolved in the mixed melt is controlled to achieve a desired growth mode. It is characterized by growing a group III nitride crystal.

(Second form)
According to a second aspect of the present invention, in the Group III nitride crystal manufacturing method of the first aspect, the amount of dissolved nitrogen in the mixed melt is increased to form a plurality of Group III nitride nuclei on the substrate. After the formation, the plurality of crystal nuclei are expanded (multi-nuclear growth).

  Specifically, when the amount of nitrogen dissolved in the mixed melt is set to the vicinity A (including A0) of the point A0 in FIG. 2, the group III nitride can be multinucleated by crystal growth.

  In this way, a group III nitride crystal having a reduced defect density can be produced by multinucleating group III nitride on the substrate.

  FIG. 3 is a view showing a group III nitride (GaN crystal in the example of FIG. 3) grown on the substrate by a multinuclear method by a flux method.

  In the example of FIG. 3, GaN is multinuclear grown on the substrate 110 under conditions for multinuclear growth (for example, nitrogen pressure 4 MPa, Na amount ratio 0.5). The substrate 110 is installed in the mixed melt holding container 102 as shown in FIG. The material of the substrate 110 is not particularly limited as long as it is mechanically, thermally, and chemically resistant in the mixed melt because GaN crystals grow. For example, GaN, sapphire, or a sapphire substrate on which GaN is grown as a thin film may be used. In the example of FIG. 3, a substrate 110 in which a GaN thin film 201 is grown on a sapphire substrate 200 by MOCVD (metal organic chemical vapor deposition) is used. Since the GaN thin film 201 is grown on the sapphire substrate 200, the defect density such as dislocation is high as described in the prior art.

On the GaN thin film 201, the GaN crystal 202 is multinuclear grown by a flux method. This GaN crystal 202 is called a polynuclear GaN crystal. One domain crystal of the polynuclear GaN crystal 202 has almost no crystal defects, and its size is several tens of μm to several hundreds of μm. On the other hand, the GaN thin film 201 grown on the sapphire substrate 200 usually has a large dislocation density of 10 ⁸ to 10 ¹⁰ cm ⁻² .

  Although the boundary region where the multi-nuclear GaN crystals are in contact with each other is a crystal defect, the defect density of the multi-nuclear GaN region located above the boundary region is still smaller than the defect density of the GaN thin film 201.

  As described above, a high-quality group III nitride (eg, GaN) crystal having a low defect density can be obtained by multiplying a group III nitride (eg, GaN) crystal on the substrate by a flux method. It becomes possible to produce without passing through an easy process. That is, both low cost and high quality can be achieved.

(Third form)
The third aspect of the present invention is characterized in that, in the Group III nitride crystal manufacturing method of the second aspect, the density of crystal nuclei grown on the substrate is smaller than the crystal defect density of the substrate.

  Thus, in multinuclear growth, since the density of crystal nuclei grown on the substrate is smaller than the crystal defect density of the substrate, a high-quality group III nitride (eg, GaN) crystal having a low defect density is produced. Can do.

(4th form)
According to a fourth aspect of the present invention, in the Group III nitride crystal manufacturing method of the first aspect, after a predetermined Group III nitride crystal is grown on a substrate, the amount of dissolved nitrogen in the mixed melt is increased. A plurality of crystal nuclei of group III nitride are formed on the predetermined group III nitride crystal, and then the plurality of crystal nuclei are expanded (multi-nuclear growth).

  As described above, in the fourth embodiment, after a predetermined group III nitride crystal is grown on the substrate, the amount of nitrogen dissolved in the mixed melt is increased, and the group III nitride crystal is formed on the predetermined group III nitride crystal. This is different from the second embodiment in that a plurality of nitride crystal nuclei are grown in a multinuclear manner.

  Here, as the predetermined group III nitride crystal, the group III nitride crystal produced by setting the nitrogen dissolution amount in the mixed melt to an arbitrary nitrogen dissolution amount within the range from the point A0 to the region B0 in FIG. Therefore, any group III nitride crystal of III-nitride crystal grown by polynuclearity or group III nitride crystal grown epitaxially can be used.

  FIG. 4 shows a group III nitride 202 (FIG. 4) in which a GaN film 203 is epitaxially grown on a substrate 110 (sapphire substrate 200, GaN thin film 201) by a flux method and then multinuclear grown on the GaN film 203 by a flux method. It is a figure which shows a GaN crystal in an example. In the example of FIG. 4, the presence of the epitaxially grown GaN film 203 between the polynuclear GaN crystal 202 and the GaN thin film 201 enables the polynuclear GaN crystal 202 to have higher quality.

  In the flux method, the amount of nitrogen dissolved in the mixed melt is small at the initial stage of growth, and crystals of nitrogen vacancies are likely to grow. As the crystal growth proceeds, the amount of nitrogen dissolved in the mixed melt increases, and a high-quality GaN crystal with few nitrogen vacancies grows.

  As described above, after a predetermined group III nitride crystal is grown on the substrate, the amount of nitrogen dissolved in the mixed melt is increased, and a plurality of group III nitride crystals are formed on the predetermined group III nitride crystal. By growing the nuclei in multiple nuclei, a high-quality group III nitride (eg, GaN) crystal having a low defect density can be produced without going through the complicated steps described in the prior art. That is, both low cost and high quality can be achieved.

(5th form)
According to a fifth aspect of the present invention, in the Group III nitride crystal manufacturing method of the first aspect, the amount of nitrogen dissolved in the mixed melt is reduced, and a surface different from the main surface of the substrate (specifically, Specifically, for example, a group III nitride crystal is epitaxially grown while forming a concavo-convex shape with {10-11} plane) as the main growth surface.

  Specifically, when the amount of dissolved nitrogen in the mixed melt is set to a region B (including B0) in the vicinity of the region B0 in FIG. 2 and crystal growth is performed (that is, the amount of dissolved nitrogen in the mixed melt is reduced). ), And a group III nitride crystal can be epitaxially grown while forming a concavo-convex shape with a surface different from the main surface of the substrate (specifically, for example, the {10-11} surface) as the main growth surface.

  In this way, the amount of nitrogen dissolved in the mixed melt is reduced, and the surface of the substrate is different from the main surface of the substrate (specifically, for example, the {10-11} surface) as the main growth surface. A group III nitride crystal having a reduced defect density can be produced by epitaxially growing the group III nitride crystal while it is formed (that is, by utilizing the epitaxial growth mode of the present invention).

  FIG. 5 is a diagram showing an example of a group III nitride (GaN crystal in the example of FIG. 5) grown on the substrate by the flux method in the epitaxial growth mode of the present invention.

  In the example of FIG. 5, GaN is epitaxially grown on the substrate 110 under the conditions for epitaxial growth (for example, nitrogen pressure 4 MPa, Na amount ratio 0.4). The substrate 110 is installed in the mixed melt holding container 102 as shown in FIG. The material of the substrate 110 is not particularly limited as long as it is mechanically, thermally, and chemically resistant in the mixed melt because GaN crystals grow. For example, GaN, sapphire, or a sapphire substrate obtained by growing a thin film of GaN may be used. In the example of FIG. 5, a substrate 110 in which a GaN thin film 201 is grown on a sapphire substrate 200 by MOCVD (metal organic chemical vapor deposition) is used. Since the GaN thin film 201 is grown on the sapphire substrate 200, the defect density such as dislocation is high as described in the prior art. The crystal orientation of the sapphire substrate 200 is the C plane, that is, the (0001) plane. Therefore, the main surface of the GaN thin film 201 is also a C surface.

  A GaN crystal 202 is epitaxially grown on the GaN thin film 201 by a flux method. This GaN crystal 202 is called an epi-GaN crystal. The epi-GaN crystal 202 forms a crystal plane {10-11} equivalent to the (10-11) plane and grows while forming an uneven shape. The crystal plane {10-11} is a plane shown by an oblique line in FIG.

The GaN thin film 201 grown on the sapphire substrate 200 usually has a large dislocation density of 10 ⁸ to 10 ¹⁰ cm ^−2, and the crystal growth axis direction (in this case, the C-axis direction <0001> axis) component The dislocations having と な り become threading dislocations and propagate to the epiGaN crystal 202 as well. However, in the crystal plane {10-11}, the dislocation is bent with a lateral component, and the threading dislocation to the C plane is reduced.

  That is, in the Group III nitride crystal growth method of the first embodiment, the amount of nitrogen dissolved in the mixed melt is reduced, and an uneven shape is formed on the substrate with a surface different from the main surface of the substrate as the main growth surface. The group III nitride crystal is grown epitaxially (that is, a surface different from the main surface of the substrate (specifically, {10-11} surface, for example) is formed on the substrate to form a concavo-convex shape, and the GaN crystal is formed. By epitaxial growth, a group III nitride crystal with fewer defects than the substrate can be produced.

  As described above, a group III nitride (eg, GaN) crystal is epitaxially grown on the substrate by the flux method in the epitaxial growth mode of the present invention, thereby producing a high-quality group III nitride (eg, GaN) crystal having a low defect density. It can be manufactured without going through the complicated steps described in the technology. That is, both low cost and high quality can be achieved.

(Sixth form)
According to a sixth aspect of the present invention, in the method for producing a group III nitride crystal according to the first aspect, after a predetermined group III nitride crystal is grown on a substrate, the amount of nitrogen dissolved in the mixed melt is reduced. Then, a group III nitride crystal is formed on the predetermined group III nitride crystal while forming a concavo-convex shape with a surface different from the main surface of the substrate (specifically, for example, {10-11} surface) as a main growth surface. Is characterized by epitaxial growth.

  As described above, in the sixth embodiment, after a predetermined group III nitride crystal is grown on the substrate, the amount of nitrogen dissolved in the mixed melt is reduced to form an uneven shape on the predetermined group III nitride crystal. This is different from the fifth embodiment in that the group III nitride crystal is epitaxially grown while forming.

  Here, as the predetermined group III nitride crystal, the group III nitride crystal produced by setting the nitrogen dissolution amount in the mixed melt to an arbitrary nitrogen dissolution amount within the range from the point A0 to the region B0 in FIG. Therefore, any group III nitride crystal of III-nitride crystal grown by polynuclearity or group III nitride crystal grown epitaxially can be used.

  FIG. 6 shows a group III nitride 202 (FIG. 4) in which a GaN film 203 is epitaxially grown on a substrate 110 (sapphire substrate 200, GaN thin film 201) by a flux method and then epitaxially grown on the GaN film 203 by a flux method. It is a figure which shows a GaN crystal in an example. In the example of FIG. 6, the GaN crystal 202 can be of higher quality because there is the epitaxially grown GaN film 203 between the GaN crystal 202 and the GaN thin film 201.

  In the flux method, the amount of nitrogen dissolved in the mixed melt is small at the initial stage of growth, and crystals of nitrogen vacancies are likely to grow. As the crystal growth proceeds, the amount of nitrogen dissolved in the mixed melt increases, and a high-quality GaN crystal with few nitrogen vacancies grows.

  As described above, a group III nitride (eg, GaN) crystal is epitaxially grown on the substrate by the flux method in the epitaxial growth mode of the present invention, thereby producing a high-quality group III nitride (eg, GaN) crystal having a low defect density. It can be manufactured without going through the complicated steps described in the technology. That is, both low cost and high quality can be achieved.

(7th form)
In the seventh aspect of the present invention, the group III nitride crystal grown by the method for producing a group III nitride crystal of any one of the second to fourth aspects is planarized, and then the group III nitride crystal is formed. It is characterized by growing again.

FIG. 7 shows an example in which a group III nitride crystal grown by the method for producing a group III nitride crystal according to any one of the second to fourth forms is planarized. The example of FIG. 7 is a flattened group III nitride crystal that has been multinucleated as shown in FIG.

As described above, in the present invention, the group III nitride crystal grown by the method for producing a group III nitride crystal according to any one of the second to fourth aspects is planarized, and then the group III nitride crystal is again formed. It can also grow.

Thus, any of the Group III was grown to a crystal manufacturing method according nitride of the first to seventh crystals, more defect density more than traditional is reduced, the practical size A large-sized, large-area high-quality group III nitride crystal can be provided.

FIG. 8 is a perspective view in which a group III nitride semiconductor manufactured according to the present invention is used in a semiconductor laser which is an application example of a device.

In the semiconductor laser of FIG. 8, on the GaN substrate 601 the density of crystal defects is reduced, the GaN based thin film 602 to 607 is grown. That is, an n-type AlGaN layer 602, an n-type GaN layer 603, an InGaN MQW (multiple quantum well) layer 604, a p-type GaN layer 605, a p-type AlGaN layer 606, and a p-type GaN layer 607 are sequentially crystallized on the GaN substrate 601. Grow. As this crystal growth method, a thin film crystal growth method such as MO-VPE (metal organic chemical vapor deposition) method or MBE (molecular beam epitaxy) method can be used. Since the MOVPE method, the MBE method, and the like are methods suitable for thin film growth, p-type and n-type conductivity control, carrier concentration control, and mixed crystal composition control of GaN, AlN, and InN are possible. A thin film for a device of thin films 602 to 607 can be grown.

As described above, since the GaN crystal manufactured according to the present invention is used as the GaN substrate 601, the crystal defects are very small in the region of the device thin film 602 to 607.

In the semiconductor laser of FIG. 8, a ridge structure is formed in the laminated films 602 to 607 of GaN, AlGaN, and InGaN, and the SiO ₂ insulating film 608 is formed in a state where only the contact region is drilled. Side ohmic electrodes Au / Ni 609 and n-side ohmic electrodes Al / Ti 610 are formed.

  By injecting current from the p-side ohmic electrode Au / Ni 609 and the n-side ohmic electrode Al / Ti 610 of this semiconductor laser, laser oscillation occurs and laser light is emitted in the direction of the arrow in the figure.

Thus semiconductor laser that uses a GaN crystal of the present invention as a substrate, crystal defects in the semiconductor laser device is small, it has become a large output operation and long life. In addition, since the GaN substrate is n-type, electrodes can be directly formed on the substrate. When an insulating substrate such as a conventional sapphire substrate is used, two electrodes on the p side and n side are formed from the surface. Therefore, it is possible to reduce the cost. Further, the light emitting end face can be formed by cleaving, and a high-quality device can be realized at low cost in combination with chip separation.

  In the above example, InGaN MQW is used as the active layer, but the emission wavelength can be shortened using AlGaN MQW as the active layer. Since there are few defects and impurities in the GaN substrate, light emission from a deep order is reduced, and a highly efficient light-emitting device is possible even if the wavelength is shortened.

  In the above example, application to an optical device has been described. However, application to an electronic device is also applicable to the present invention. That is, by using a GaN substrate with few defects, the GaN-based thin film epitaxially grown on the GaN substrate has few crystal defects. As a result, leakage current can be suppressed, the carrier confinement effect when a quantum structure is formed, A high-performance device can be realized.

Thus, since it is a semiconductor device using the group III nitride crystal manufactured by this invention , a high quality and high performance semiconductor device can be provided.

  The present invention can be used for a blue-violet light source for optical disks, an ultraviolet light source (LD, LED), a blue-violet light source for electrophotography, a group III nitride electronic device, and the like.

It is a figure which shows the structural example of the III group nitride crystal manufacturing apparatus by the flux method. It is a figure showing the multinuclear growth condition region and the epi growth condition region when the nitrogen pressure and the quantity ratio of Na and Ga in the mixed melt are used as parameters. It is a figure which shows the group III nitride by which the multinuclear growth was carried out on the board | substrate by the flux method. FIG. 3 is a view showing a group III nitride obtained by epitaxially growing a GaN film on a substrate by a flux method and then growing a multinuclear structure on the GaN film by a flux method. It is a figure which shows an example of the group III nitride grown in the epitaxial growth mode of this invention on the board | substrate by the flux method. It is a figure which shows the other example of the group III nitride grown by the epitaxial growth mode of this invention on the board | substrate by the flux method. It is a figure which shows an example which planarized the group III nitride crystal | crystallization grown by the crystal growth method of the group III nitride of this invention. It is the perspective view which used the group III nitride semiconductor manufactured by this invention for the semiconductor laser which is an application example of a device .

101 First reaction vessel 102 Mixed melt holding vessel 103 Mixed melt 104 Gas supply pipe 105 Pressure regulating valve 106 Heating device 109 Lid 111 Pressure sensor 112 Thermocouple 113 Second reaction vessel 110 Substrate 200 Sapphire substrate 201 GaN thin film 202 Group III nitride (GaN crystal)
203 GaN film 601 GaN substrate 602 to 607 GaN-based thin film 608 SiO ₂ insulating film 609, 610 Electrode

Claims (2)

In the reaction vessel, a flux and a substance containing at least a group III metal form a mixed melt, and a group III nitride composed of a group III metal and nitrogen from the mixed melt and a substance containing at least nitrogen In the method for producing a group III nitride crystal by a flux method in which a crystal is grown,
Increasing the amount of nitrogen dissolved in the mixed melt to form a plurality of Group III nitride nuclei on the substrate by multinuclear growth without taking over the crystal axis of the substrate;
And a step of expanding the plurality of crystal nuclei. A method for producing a group III nitride crystal, comprising: 2. The method for producing a Group III nitride crystal according to claim 1, wherein the Group III nitride crystal grown by the Group III nitride crystal growth method is planarized, and then the Group III nitride crystal is grown again. A method for producing a crystal of a group III nitride, comprising:

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