JP4557568B2 - Mg deposition method - Google Patents

Description

  The present invention relates to a Mg vapor deposition method for forming a Mg film on a vapor deposition body (substrate) made of an Mg (magnesium) alloy by vacuum vapor deposition.

  Since the Mg alloy is the lightest and most specific strength among practical metal materials, it is an optimal material for reducing the weight of the structure. On the other hand, the Mg alloy is inferior in corrosion resistance to Al (aluminum) alloy etc., so it is necessary to improve the corrosion resistance practically. Conventionally, wet surface treatment (anodization treatment, chemical conversion treatment, etc.) has been performed. It was given. However, surface treatment by a wet method has insufficient corrosion resistance, surface hardness, etc., and hexavalent chromium in chemical conversion treatment (chromate treatment) is not preferable in terms of environmental protection. For this reason, surface treatment by a dry method has been desired.

  Examples of the surface treatment by the dry method include a vacuum deposition method, an ion implantation method, an ion plating method, and a plasma CVD method. Among these, an ion implantation method, an ion plating method, a plasma CVD method, and the like are experimentally possible, but are not suitable for mass production, and the most practical method is a vacuum deposition method. When Mg as a deposition material is deposited on the surface of the Mg alloy material by this vacuum deposition method, the following method is used.

That is, a substrate made of Mg alloy (a deposition target) is placed in a vacuum chamber, and an evaporation source (heating device) that heats and evaporates Mg as a deposition material is placed facing the substrate. Then, Mg is evaporated by an evaporation source, and Mg is attached to the surface of the substrate (for example, see Non-Patent Document 1).
Co-authored by Siegfried Schiller and Ulrich Heisig, translated by Japan Vacuum Technology Co., Ltd. “Vacuum Deposition”, Agne Publishing Co., Ltd., August 1, 1979

By the way, such vacuum deposition is usually performed under a vacuum of 10 ⁻³ Pa or less. Under such a vacuum, the probability that the evaporated particles collide with each other is 10% or less, and the lower the pressure, the higher the probability. Is getting lower. That is, in vacuum vapor deposition, most of the evaporated particles do not collide (is not scattered), but travel straight in the evaporation direction from the vapor deposition material (the direction in which the evaporated particles scatter) and collide with the substrate. In other words, the vapor deposition particles adhere only to the surface of the substrate facing the direction in which the vapor particles are scattered from the vapor deposition material.

 Further, in such vacuum vapor deposition, the vapor deposition material is melted and evaporated by the evaporation source, so that the molten vapor deposition material is stably held (so that the molten vapor deposition material does not spill from the evaporation source). There is a need. For this reason, it is necessary to arrange the emission surface of the evaporation source (the surface from which the evaporated particles are emitted) facing upward. For this reason, the substrate must be positioned above the evaporation source, and the deposition surface of the substrate (the surface on which the film is to be formed) must face the emission surface of the evaporation source. As a result, a film is formed only on the deposition surface. Therefore, when it is desired to form a film on the other surface of the substrate, it is necessary to repeat the process of rearranging the substrate (with the other film formation surface facing downward) and performing vapor deposition again.

 On the other hand, the corrosion resistance of Mg depends on its purity. Corrosion is likely to occur when the purity is about 99%, but hardly occurs when the purity is about 99.9999%. In particular, the influence of corrosion resistance deterioration due to Fe, Ni, Co, Cu is large, and the content of Al, Mn, Na, Si, Sn, Pb, Th, Zr, Be, Ce, Pr, Y is about 5% by weight. Then, the corrosion resistance is not greatly deteriorated. Moreover, Zn, Cd, Ca, and Ag are the grades that slightly deteriorate the corrosion resistance. In any case, in order to obtain good corrosion resistance, it is necessary to deposit high-purity Mg on the substrate. However, ultra-high purity Mg having a purity of 99.9999% is very expensive, and it is practically impossible to use such an expensive material as a vapor deposition material (not applicable to mass production).

  Therefore, the present invention can form a Mg film on any film formation surface of the vapor deposition target, and can provide an Mg film with high corrosion resistance without using ultra-high purity Mg as a vapor deposition material. It aims at providing the Mg vapor deposition method which can be formed in a to-be-deposited body.

To achieve the above object, the present invention uses Mg or an Mg alloy as a vapor deposition material, sublimates Mg in the vapor deposition material at a temperature lower than the melting point of the vapor deposition material, and vaporizes Mg vaporized by the sublimation. a Mg evaporation method of attaching to the body, said deposition object arranged on four sides of up, down, left and right of the holder is a cube, each of the deposition object release surface on which the vaporized Mg of the heating device is released It arrange | positions so that it may oppose to the film-forming surface of , and it is characterized by performing vapor deposition.
(Function)
Since Mg is sublimated at a temperature lower than the melting point of the vapor deposition material, the vapor deposition material does not melt and the vapor deposition material does not spill from the discharge surface of the heating device. For this reason, the discharge | release surface of a heating apparatus can be located in all directions.

  Moreover, the saturated vapor pressure of Mg is extremely high, and the saturated vapor pressure of Fe, Ni, Co, and Cu that greatly deteriorates the corrosion resistance of Mg is extremely low. For this reason, even if Fe, Ni, etc. are contained in the vapor deposition material, Fe, Ni, etc. do not sublime with the sublimation of Mg. On the other hand, even if Al, Mn, Na, Si, Sn, Pb or the like is contained in the vapor deposition material, the corrosion resistance of Mg is not deteriorated practically. As a result, an Mg film having high corrosion resistance is formed on the deposition target without using ultra-high purity Mg as a deposition material.

 Furthermore, since the vapor deposition material is not melted, adhesion of the vapor deposition material to the heating device, consumption of the heating device, alloying of the vapor deposition material and the heating device material, and the like are suppressed, and the soundness of the heating device is maintained.

 According to the present invention, it is possible to form the Mg film on the film formation surface in any direction by making the discharge surface of the heating device face the film formation surface of the vapor deposition body. Thereby, it is possible to arrange a plurality of heating devices for a plurality of deposition surfaces and simultaneously form an Mg film. Moreover, the method is simple and the manufacturing cost can be kept low.

  In addition, since Mg is sublimated at a temperature lower than the melting point of the vapor deposition material and elements that greatly deteriorate the corrosion resistance of Mg are not vaporized, an Mg film with high corrosion resistance can be formed without using ultra-high purity Mg as the vapor deposition material. It can be formed on the deposition target.

  Furthermore, since the vapor deposition material is not melted, the service life of the heating device can be improved.

  In addition, because of vacuum deposition, there is no problem of environmental pollution as seen in conventional wet methods.

Hereinafter, the present invention will be described based on the illustrated embodiments.
<Embodiment 1>
FIG. 1 is a conceptual front view showing an Mg deposition method according to Embodiment 1 of the present invention.

  In the figure, reference numeral 1 denotes a vacuum chamber, and a stainless steel substrate holder 5 is supported and arranged at the center by a support frame (not shown). In this embodiment, the substrate holder 5 is a cube having a side of 60 mm, and the substrate 2 (deposition body) is attached to the center of the four surfaces on the top, bottom, left, and right. This substrate 2 is an AZ31 material (3Al, 1Zn, 0.15Mn spreading Mg alloy), a square with a side of 40 mm, and a plate thickness of 1 mm. A heating device 4 is arranged so as to face each of these substrates 2.

  The heating device 4 is a tantalum pipe having an outer diameter of 10 mm, an inner diameter of 9 mm, and a length of 100 mm. On the side surface of the pipe, discharge holes 4a through which vaporized Mg, which will be described later, is discharged are formed in a line along the axial direction. That is, the discharge holes 4 a have a diameter of 6 mm and are continuously formed at a pitch of 10 mm (distance between the hole centers), and a surface (discharge surface) on which the discharge holes 4 a are continuously formed is formed on the substrate 2. The heating device 4 is arranged so as to face each other. Note that the heating method of the heating device 4 is a resistance heating method in the present embodiment, and a current is directly passed through the heating device 4 and heating is performed by resistance heat generated by the current.

 The vapor deposition material 3 is accommodated in the heating device 4, and both ends (both ends of the pipe) of the heating device 4 are sealed with a tantalum foil lid 4b so that vaporized Mg, which will be described later, is not discharged from both ends. . The vapor deposition material 3 is made of Mg having a purity of 99.9%, and is a twisted ribbon-shaped material having a thickness of 0.24 mm and a width of 3.2 mm.

  Next, the results of performing the vapor deposition process with such a configuration will be described.

First, the inside of the vacuum chamber 1 was evacuated, and after the degree of vacuum reached 10 ⁻³ Pa, the heating device 4 was heated by energization to maintain the temperature at about 800 K (Mg melting point: 923 K). Thereby, the vapor deposition material 3 in each heating device 4 was sublimated, and Mg vaporized by this sublimation was released from the discharge hole 4a of the heating device 4, and adhered to each substrate 2 to form an Mg film. The thickness of this Mg film was 21 μm, 23 μm, 25 μm, and 26 μm for each substrate 2, and an Mg film having a substantially uniform thickness was formed on the entire surface of each substrate 2. That is, the film formation was performed well not only on the substrate 2 positioned in the lower part in the vacuum chamber 1 but also on the substrate 2 positioned on the left and right and upper parts.

  Thus, the process (mechanism) in which Mg film | membrane is formed in the board | substrate 2 by sublimating Mg as the vapor deposition material 3 below melting | fusing point is demonstrated below.

The amount of evaporation (vaporization amount) W (kg / m ² s) that evaporates (vaporizes) from the unit area per unit time is expressed by the following equation (Applied Physics Society, 2nd edition “Applied Physics Handbook” (Maruzen) 2002)).

W = 4.375 × 10 ⁻³ · α · P · (M / T) ^1/2
Here, P (Pa) is the saturated vapor pressure at temperature T (K), M is the molecular weight of the evaporated molecules, T is the absolute temperature of the evaporation surface, and α is the evaporation coefficient. This evaporation coefficient α is the ratio of the evaporation rate from the actual evaporation surface to the evaporation rate from the evaporation surface in an ideal state, α = 1 for very clean evaporation surfaces, and α = Treated as 1.

By the way, in order to perform practical vapor deposition processing, the evaporation amount W needs to be about 10 ⁻⁴ to 10 ⁻¹ (kg / m ² s). Here, as an example of aluminum (Al) that is commonly used as a vapor deposition material, the melting point of Al is 933K, whereas the temperature during the vapor deposition treatment is usually 1,500 to 1,700K, and its evaporation amount W Is 5.9 × 10 ^{−4 to} 3.0 × 10 ⁻² (kg / m ² s).

On the other hand, the melting point of Mg is 923 K, which is not much different from the melting point of Al, but when comparing the saturated vapor pressure at the same temperature, Mg is 10 ⁵ to 10 ¹⁰ times larger than Al. For this reason, when the evaporation amount (vaporization amount) W of Mg is calculated from the saturated vapor pressure at each temperature, it is as shown in FIG.

From this calculation result, it can be seen that the evaporation amount (vaporization amount) of Mg is a practical amount for the vapor deposition process even in the sublimation state. That is, in a molten state at 1,000 K, which is slightly higher than the melting point, the evaporation amount is 8.8 × 10 ⁻¹ (kg / m ² s), which is an order of magnitude larger than the Al evaporation amount at 1,700 K. Further, at 900K just below the melting point, the evaporation amount is extremely large as 2.0 × 10 ⁻¹ (kg / m ² s), and further, at 800K, the evaporation amount is 1.7 × 10 ⁻² (kg / m ² s). This is a sufficiently practical amount for the vapor deposition process.

  Thus, due to the extremely high saturated vapor pressure of Mg, a sufficient amount of evaporation (vaporization amount) can be obtained by sublimation even at a temperature lower than the melting point of Mg. Normally, evaporation means that the phase changes from a liquid to a gas, and as described above, when sublimating below the melting point, it should be called vaporization. In order to match or distinguish terms, the terms evaporation, evaporation, vaporization, vaporization are used as appropriate.

  Due to the above mechanism, in the present embodiment, even when the temperature of the heating device 4 is about 800 K, Mg is vaporized by sublimation and an Mg film is formed on the substrate 2. By the way, in this embodiment, Mg having a purity of 99.99% is used as the vapor deposition material 3, but even if Mg having a relatively low purity is used as described above, a Mg film having high corrosion resistance is formed on the substrate 2. The reason (mechanism) will be described next.

The saturated vapor pressure of Fe, Ni, Co, and Cu at the same temperature is extremely lower than that of Mg. For example, the saturation vapor pressure of Fe, Ni, Co, and Cu at 300 ° C. is 1/10 ¹⁶ of Mg, and 1/10 ¹⁰ at 600 ° C. Moreover, when comparing the temperatures at which the saturated vapor pressure is the same, Mg is 437 ° C., whereas Fe is 1,425 ° C. Therefore, Fe, Ni, Co, and Cu are not sublimated or vaporized even when the vapor deposition is performed under the above conditions (vacuum degree: 10 ⁻³ Pa, heating device temperature: 800 K). That is, even if Fe, Ni, Co, and Cu are contained in the vapor deposition material 3, an Mg film not containing these is formed on the substrate 2. On the other hand, even if Al, Mn, Na, Si, Sn, Pb, and the like are contained in the vapor deposition material 3, even if these elements are contained in the Mg film of the substrate 2, the influence of the corrosion resistance deterioration due to these elements. Since Mg having a purity of 99.9% is used as the vapor deposition material 3 (the balance is only 0.1%), it can be said that the influence is not practical.

 For the reasons described above, even when Mg having a relatively low purity is used as the vapor deposition material 3, an Mg film having high corrosion resistance is formed on the substrate 2. In the present embodiment, Mg having a purity of 99.99% is used as the vapor deposition material 3, but as is apparent from the above reason, it is not necessary to use such pure Mg. It may be. Further, if Al, Mn, Na, Si, Sn, Pb, etc. are in an amount range that does not affect the corrosion resistance deterioration, an alloy containing these elements, Fe, Ni, etc. may be used (Fe, Ni). Since Ni, Co, and Cu are not vaporized, their content is not limited. For example, the vapor deposition material 3 may be an AZ, AM, ZK, EZ, QE, or WE Mg alloy.

  As described above, according to the Mg vapor deposition method according to the present embodiment, Mg is sublimated at a temperature lower than the melting point of the vapor deposition material 3 (pure Mg), so the vapor deposition material 3 does not spill from the heating device 4. Therefore, as shown in FIG. 1, the substrate 2 is arranged on the upper, lower, left and right surfaces of the substrate holder 5, and the discharge surface of the heating device 4 (the surface on which the continuous discharge holes 4 a are formed) is provided on each substrate 2. It can arrange | position so that it may oppose. That is, the discharge surface of the heating device 4 can be positioned in any direction. As a result, it is possible to perform the vapor deposition process simultaneously on the substrates 2 positioned on the top, bottom, left and right. In addition, the method is a simple method in which a plurality of heating devices 4 are arranged, and does not require equipment different from the conventional one, so that the manufacturing cost can be kept low.

  In the present embodiment, the plurality of heating devices 4 are arranged so as to face the respective substrates 2, but an annular heating device surrounding the four substrates 2 is provided, and the discharge surface of this heating device is provided on each substrate 2. You may form so that it may oppose.

  Furthermore, even when one deposition target (substrate) has a plurality of deposition surfaces, it is possible to perform deposition on each deposition surface at once. In other words, each deposition target is formed by arranging (e.g., suspending) the entire deposition target surface of the deposition target so that it is exposed, and forming the discharge surface of the heating device so as to surround all the deposition target surfaces. Vapor deposition on the surface is possible. Alternatively, as in the present embodiment, a plurality of heating devices may be provided, and the discharge surface of each heating device may be disposed so as to face each deposition surface (enclose the deposition target with the heating device).

  Further, since the vapor deposition material 3 is not melted, adhesion of the vapor deposition material 3 to the heating device 4, consumption of the heating device 4, alloying of the vapor deposition material 3 and the heating device 4, etc. are suppressed, and the heating device 4 is sound. Sex is maintained. That is, the heating device 4 can be used repeatedly, and the service life of the heating device 4 is improved.

  Furthermore, although there was a reduction (consumption) of the vapor deposition material 3 due to the vaporization of Mg, there was no melting and the soundness was maintained. Therefore, the vapor deposition material 3 can be easily taken out from the heating device 4 and stored, or can be used continuously for vapor deposition.

  Moreover, although the board | substrate 2 is also heated by the radiant heat by the heating of the heating apparatus 4, the oil-fat component adhering to the board | substrate 2 is removed by the heating of this board | substrate 2, and the adhesiveness of the board | substrate 2 and Mg film | membrane improves. To do. Further, the migration (surface movement) of Mg vaporized from the vapor deposition material 3 and colliding with the substrate 2 is improved, and as a result, the generation of pinholes in the Mg film is suppressed.

In addition, such a vacuum evaporation method does not cause the problem of environmental pollution as seen in the conventional wet method, and is preferable from the viewpoint of environmental protection.
<Embodiment 2>
In this embodiment, an AZ31 material (the same material as the substrate 2) is used as the vapor deposition material 3, and the shape thereof is a square bar having a cross section of 1 mm × 2 mm and a length of 90 mm. Further, the present embodiment is different from the first embodiment in that the temperature of the heating device 4 is maintained at about 850K.

  The results of the vapor deposition treatment are as good as in the first embodiment, and the thickness of the Mg film on each substrate 2 is 34 μm, 35 μm, 37 μm, and 40 μm. Been formed. Thus, the film thickness is thicker than the film thickness of the first embodiment because the temperature of the heating device 4 is high, and is apparent from the evaporation amount (vaporization amount) in FIG. Therefore, also from this result, it is understood that the temperature of the heating device 4 should be increased (though below the melting point) in order to increase the thickness of the Mg film in a certain time.

In addition, the soundness of the heating apparatus 4 and the vapor deposition material 3 was maintained similarly to Embodiment 1.
<Embodiment 3>
This embodiment is different from the first embodiment only in that the heating device 4 is made of a heat-resistant steel made of Fe-28% Cr-15% Ni (pipe-like as in the first embodiment).

 The heating apparatus 4 was kept at a temperature of 800 K, and the result of vapor deposition was as good as in the first embodiment. The thickness of the Mg film on each substrate 2 was 20 μm, 20 μm, 23 μm, and 24 μm. In both cases, an Mg film having a substantially uniform thickness was formed on the entire surface. Moreover, the soundness of the heating device 4 and the vapor deposition material 3 was also maintained.

In addition, in this embodiment, although the heat resistant steel of Fe-28% Cr-15% Ni is used as a material of the heating apparatus 4, Cr steel, Cr-Si-Al steel, Cr-Ni steel (SUS, SUH) A heat-resistant rope such as may be used.
<Embodiment 4>
In this embodiment, a 4 mm wide slit was formed in the heating device 4 made of a heat resistant steel of Fe-28% Cr-15% Ni (pipe shape as in the first embodiment) to form a vaporized Mg discharge hole. Further, the three heating devices 4 located on the left, right, and upper sides in the vacuum chamber 1 are provided at four locations so as to intersect the slits so that the vapor deposition material 3 (ribbon shape as in the first embodiment) does not protrude from the slits. A tantalum wire was wound around the wire. The present embodiment is different from the first embodiment in these points.

 The temperature of the heating device 4 was kept at 800 K, and the result of the vapor deposition treatment was good as in the first embodiment. That is, the thickness of the Mg film of each substrate 2 was 31 μm, 33 μm, and 34 μm in the substrate 2 facing the heating device 4 wound with a tantalum wire, and was not wound (located in the lower part in the vacuum chamber 1). The thickness of the substrate 2 facing the heating device 4 was 37 μm. In addition, an Mg film having a substantially uniform thickness was formed on the entire surface of each substrate 2, and the soundness of the heating device 4 and the vapor deposition material 3 was also maintained.

Thus, since the film thickness of Mg was thicker than that of the third embodiment, it can be said that the larger the release hole from which vaporized Mg is released, the more effectively the film can be formed. The film thickness of the substrate 2 facing the heating device 4 wound with the tantalum wire was slightly thinner than the film thickness of the substrate 2 facing the heating device 4 not wound, because of the vaporized Mg released from the slit. This is because part of the light was scattered by the tantalum wire.
<Embodiment 5>
The present embodiment is different from the first embodiment in that the heating device 4 is heated by the heater 6. That is, the heater 6 was an infrared heater, and the heater 6 was disposed on the back surface of the heating device 4 to heat the heating device 4.

 The heater 6 kept the temperature of the heating device 4 at 800 K, and the result of the vapor deposition treatment was as good as in the first embodiment. That is, the thickness of the Mg film on each substrate 2 was 20 μm, 21 μm, 24 μm, and 25 μm, and an almost uniform thickness of the Mg film was formed on the entire surface of each substrate 2. Moreover, the soundness of the heating device 4 and the vapor deposition material 3 was also maintained.

  Thus, even by indirect heating by the heater 6, the heating device 4 can be appropriately heated and good film formation can be performed.

  Next, in order to compare with the vacuum deposition method according to the present invention, some comparative examples are shown.

 First, as Comparative Example 1, in the first embodiment, only the heating device 4 positioned in the lower part in the vacuum chamber 1 was heated, and the other three heating devices 4 were not heated. The other conditions are the same as in the first embodiment, and the substrate 2 is also arranged on the upper, lower, left and right surfaces of the substrate holder 5, respectively.

  Then, as a result of holding the temperature of the heating device 4 positioned below at 800 K and performing a vapor deposition process, an Mg film is formed only on the substrate 2 (the substrate 2 positioned on the lower surface of the substrate holder 5) facing the heating device 4. It was. The thickness was 23 μm, and the other three substrates were not formed.

  From Comparative Example 1, it was confirmed that the film formation was performed only on the substrate 2 facing the heating device 4, in other words, the film was not deposited on the substrate 2 (film formation surface) not facing the heating device 4. .

  Further, as Comparative Example 2, the temperature of the heating device 4 was maintained at 1,100 K, which is equal to or higher than the melting point of Mg, and an evaporation process was attempted. Other conditions are the same as those in the first embodiment.

  As a result, although the Mg film was formed on each substrate 2, molten Mg flowed out from the discharge holes 4 a of the heating device 4 located on the left, right, and upper sides in the vacuum chamber 1. For this reason, the stable vapor deposition process could not be performed, and the process was stopped. That is, molten Mg flowing out from the heating device 4 located at the top adheres to the substrate 2 as a lump, and molten Mg flowing out from the heating device 4 located on the left and right adheres to the bottom plate of the vacuum chamber 1. Was.

 From Comparative Example 2, when heating the vapor deposition material 3 to the melting point or higher, the heating device 4 cannot be positioned in a free direction, and actually the discharge surface of the heating device 4 must be positioned upward. Therefore, it was confirmed that only one substrate 2 (film formation surface) can be deposited.

 From these comparative examples 1 and 2, the heating device 4 can be arranged on the substrate 2 (film formation surface) located in any direction as in the present invention described above, so that a plurality of substrates 2 ( It was revealed that the deposition surface can be deposited and the deposition processability is greatly improved.

  INDUSTRIAL APPLICABILITY The present invention can be used as a method for improving the corrosion resistance of Mg alloy products in the fields of mobile information devices, portable home appliances, automobiles, welfare devices and the like that are lightened by using Mg alloys.

The conceptual front view which shows the Mg vapor deposition method concerning Embodiment 1 of this invention. The figure which shows the saturated vapor pressure and evaporation amount (vaporization amount) of Mg in each temperature.

Explanation of symbols

1 Vacuum chamber 2 Substrate (deposition body)
3 Deposition material 4 Heating device 4a Emission hole 5 Substrate holder 6 Heater

Claims (5)

In the Mg vapor deposition method for forming an Mg film on a vapor deposition body made of Mg alloy by vacuum vapor deposition,
Mg deposition method using Mg or Mg alloy as a vapor deposition material, sublimating Mg in the vapor deposition material at a temperature lower than the melting point of the vapor deposition material, and attaching Mg vaporized by the sublimation to the vapor deposition target, The vapor deposition body is arranged on four side surfaces of the cube holder, and is arranged so that the emission surface from which the vaporized Mg is released is opposed to the film formation surface of each vapor deposition body. And do the vapor deposition,
The Mg vapor deposition method characterized by the above-mentioned. Mg as the deposition material has a purity of 99% to 99.99%.
The Mg vapor deposition method according to claim 1, wherein: Mg alloys as the vapor deposition material include Al—Zn (AZ) alloys, Al—Mn (AM) alloys, Zn—Zr (ZK) alloys, Zn—Re (EZ) alloys, Ag. -Nd-based (QE-based) alloy or Y-Nd-based (WE-based) alloy.
The Mg vapor deposition method according to claim 1, wherein: The emission surface from which the vaporized Mg is released by an integrated heating device that heats the vapor deposition material is formed so as to face the film formation surface of the vapor deposition body.
The Mg vapor deposition method according to any one of claims 1 to 3, wherein: A plurality of heating devices for heating the vapor deposition material are provided, and the emission surface from which the vaporized Mg of each heating device is released is disposed so as to face the film formation surface of the vapor deposition target.
The Mg vapor deposition method according to any one of claims 1 to 3, wherein:

Images