JP4515473B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a laser beam irradiation method and a laser beam irradiation apparatus (an apparatus including a laser and an optical system for guiding a laser beam output from the laser beam to an irradiation object). Further, the present invention relates to a method for manufacturing a semiconductor device manufactured by including laser irradiation in a process. Note that the semiconductor device here includes an electro-optical device such as a liquid crystal display device and a light-emitting device and an electronic device including the electro-optical device as a component.

  In recent years, a technique for performing laser annealing on a semiconductor film formed on an insulating substrate such as glass to crystallize, improving crystallinity to obtain a crystalline semiconductor film, or activating an impurity element has been developed. Has been extensively studied. Note that in this specification, a crystalline semiconductor film refers to a semiconductor film in which a crystallized region exists, and includes a semiconductor film in which the entire surface is crystallized.

  A pulse laser beam such as an excimer laser is shaped by an optical system so as to form a square spot of several centimeters square or a linear shape with a length of 100 mm or more on the irradiated surface, and the laser beam is moved (or the laser beam The method of annealing by moving the irradiation position relative to the irradiated surface is highly productive and industrially excellent. In addition, “linear” here does not mean “line” in a strict sense, but means a rectangle (or oval) having a large aspect ratio. For example, the aspect ratio is 10 or more (preferably 100 to 10,000). Note that the linear shape is used to ensure sufficient energy density for annealing the irradiated object, and even if the object is rectangular, sufficient annealing can be performed on the irradiated object. It doesn't matter.

  FIG. 27 shows an example of the configuration of an optical system for processing the cross-sectional shape of laser light into a linear shape on the irradiation surface. This configuration is extremely general, and all the optical systems conform to the configuration shown in FIG. This configuration not only converts the cross-sectional shape of the laser light into a linear shape, but also achieves uniform energy of the laser light on the irradiated surface. In general, an optical system that makes beam energy uniform is called a beam homogenizer.

  Laser light emitted from the laser 101 is divided by the cylindrical array lens 103 in a direction perpendicular to the traveling direction of the laser light. This direction will be referred to as the first direction in this specification. The first direction bends in the direction of light bent by the mirror when the mirror enters the middle of the optical system. In this configuration, there are seven divisions. Thereafter, the laser light is combined into one at the irradiation surface 109 by the cylindrical lens 104. Thereby, the uniformity and length of the energy in the longitudinal direction of the linear beam are determined.

  Next, the side view of FIG. 27 will be described. Laser light emitted from the laser 101 is divided by the cylindrical array lenses 102a and 102b in a direction perpendicular to the traveling direction of the laser light and the first direction. The direction is referred to as a second direction in this specification. The second direction is bent in the direction of light bent by the mirror when the mirror enters the middle of the optical system. In this configuration, there are four divisions. These divided laser beams are once combined into one laser beam by the cylindrical array lens 104. After being reflected by the mirror 107, the laser beam is condensed again into one laser beam on the irradiation surface 109 by the doublet cylindrical lens 108. A doublet cylindrical lens refers to a lens composed of two cylindrical lenses. Thereby, the uniform energy in the short direction and the length in the short direction of the linear beam are determined.

  For example, when an excimer laser having a size of 10 mm × 30 mm (both half-value width in the beam profile) is used as the laser 101 and is molded by an optical system having the configuration shown in FIG. Such a 125 mm × 0.4 mm linear beam can be obtained.

  At this time, if the base material of the optical system is all made of quartz, for example, high transmittance can be obtained. Moreover, it is preferable to use a coating having a transmittance of 99% or more with respect to the wavelength of the excimer laser to be used.

  Then, by irradiating the linear beam formed with the above structure while gradually shifting in the short direction of the laser beam, the entire surface of the amorphous semiconductor is subjected to laser annealing to be crystallized. The crystallinity can be improved to obtain a crystalline semiconductor film, or the impurity element can be activated.

  In addition, the area of the substrate to be used is increasing. Rather than manufacturing a semiconductor device such as a single liquid crystal display device panel from a single substrate, it is higher in throughput to manufacture a semiconductor device such as a plurality of liquid crystal display device panels using a single large-area substrate. This is because the cost can be reduced. As a large area substrate, for example, a substrate of 600 mm × 720 mm, a circular 12 inch substrate (diameter of about 300 mm), and the like are used. Furthermore, in the future, it is considered that a substrate having a side exceeding 1000 mm will be used.

  However, the optical path length of an optical system that forms a linear beam having a longer length in the longitudinal direction, for example, 300 mm, is as long as 5000 mm. It is very difficult to perform optical adjustment for such an optical system having a long optical path length, and there is a problem that the apparatus becomes large because the footprint becomes large.

  Therefore, the optical path length of the optical system that forms a linear beam with a length in the longitudinal direction of 300 mm is changed by changing a part of the optical system such as changing the distance between the lenses by changing the lens to be used to a short focal length. Is 2400 mm, for example. However, the linear beam formed by this optical system is misaligned at both ends in the longitudinal direction on the irradiation surface.

  Here, the reason why the condensing positions at both ends in the longitudinal direction on the irradiation surface are shifted by shortening the optical path length will be described. Light incident obliquely to the lens has a longer optical path length than light incident vertically. In addition, the larger the incident angle of obliquely incident light, the larger the optical path difference from vertically incident light. The difference in the optical path length depending on the incident position and the incident angle becomes a deviation of the condensing position, and the image is blurred toward the end of the laser beam on the irradiation surface, that is, an image is formed on the curved surface as shown in FIG. Curvature of field occurs. Even if annealing is performed on the irradiated object using such a linear beam, uniform annealing cannot be performed.

  In addition, as the area of the substrate increases, it is an urgent task to form a linear beam having a length in the longitudinal direction of about 1000 mm. For example, when annealing is performed on a large area substrate, if a linear beam having a length of 300 mm is used, the linear beam is moved in one direction relative to the large area substrate. The entire surface of the large-area substrate cannot be annealed with only one scan for irradiation, and movement in at least two directions and multiple irradiations are required, resulting in a decrease in throughput. As a result, depending on how the laser beam is scanned, a region where annealing is performed a plurality of times or a region where annealing is not performed may be formed, and there is a high possibility that uniform annealing will not be performed. Therefore, an optical system was devised that can form a linear beam with a length of 1000 mm, for example, a length that can anneal the entire surface only by moving the length in one direction relative to the large area substrate. The condensing positions at both ends in the scale direction are shifted.

  By shaping the long laser beam in the long direction, the cause of the shift of the condensing position at both ends in the long direction on the irradiation surface is the same as the cause when the optical path length is shortened. This is because the difference between the two results in a shift in the condensing position, resulting in field curvature. Even if the length in the longitudinal direction is increased in order to perform uniform annealing, it is possible to perform uniform annealing as long as the linear beam is shifted in the condensing position at both ends in the longitudinal direction. Can not.

  Therefore, the present invention provides a laser irradiation apparatus with a short optical path length, and also provides a laser irradiation apparatus in which the deviation of the focusing position at both ends in the longitudinal direction of a rectangular beam, particularly a linear beam, is eliminated. Let it be an issue. It is another object of the present invention to provide a laser irradiation method using such a laser irradiation apparatus and to provide a method for manufacturing a semiconductor device including the laser irradiation method in a process.

  The curvature of field, which differs in the condensing position depending on the incident angle and the incident position of the laser beam to the lens, is reduced as the astigmatism is corrected. Therefore, the present invention is characterized in that a concave lens is inserted as shown in FIG. 1, the optical path length of the laser light is controlled, the light converging position is made coincident with the irradiation surface, and an image is formed on the irradiation surface. To do. Of course, the present invention is not limited to a concave lens, and may be an optical element having a negative power, or may be a cylindrical lens having a curvature only in a direction parallel to the longitudinal direction. Moreover, it can also be set as the combination of a convex cylindrical lens and a concave lens, or a combination of a convex cylindrical lens and a concave cylindrical lens. In addition, a toroidal lens or a crossed cylindrical lens can be used in the present invention.

  The convex cylindrical lens is a cylindrical lens having positive power, and the concave cylindrical lens is a cylindrical lens having negative power. Crossed Cylindrical Lens is a cylindrical lens in which the curvature of the first surface and the curvature of the second surface of the lens are formed perpendicular to each other, and is hereinafter referred to as a crossed cylindrical lens.

  The configuration of the invention relating to the laser irradiation apparatus disclosed in this specification is that a laser and a uniform energy distribution of the laser light in a first direction perpendicular to the traveling direction of the laser light emitted from the laser. And a second forming unit that controls the optical path length to the irradiation surface of the laser light so that the condensing position of the laser light is on the irradiation surface or a plane in the vicinity thereof. Means, and third forming means for making the laser light a laser light having a uniform energy distribution in a traveling direction of the laser light and a second direction perpendicular to the first direction. It is characterized by.

In the above structure, the laser is a continuous wave or pulsed solid laser or gas laser. Examples of the solid-state laser include a continuous wave or pulsed YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandride laser, Ti: sapphire laser, and the gas laser. Examples thereof include a continuous wave or pulsed excimer laser, an Ar laser, and a Kr laser.

In the above configuration, it is preferable that the laser light is converted into a harmonic by a nonlinear optical element. For example, a YAG laser is known to emit laser light having a wavelength of 1065 nm as a fundamental wave. The absorption coefficient of the laser light with respect to the silicon film is very low, and it is technically difficult to crystallize an amorphous silicon film which is one of the semiconductor films if this is left as it is. However, this laser beam can be converted to a shorter wavelength by using a nonlinear optical element, and the second harmonic (532 nm), the third harmonic (355 nm), and the fourth harmonic (266 nm) are used as harmonics. )
, Fifth harmonic (213 nm). Since these harmonics have a higher absorption coefficient than the amorphous silicon film, they can be used for crystallization of the amorphous silicon film.

  In addition, in the configuration of the invention relating to the laser irradiation method disclosed in the present specification, the laser light is laser light having a uniform energy distribution in a first direction that is perpendicular to the traveling direction of the laser light. The optical path length to the irradiation surface of the laser beam is controlled so that the condensing position of the laser beam is on the irradiation surface or a plane in the vicinity thereof, and is perpendicular to the traveling direction of the laser beam and the first direction. In the second direction, which is a direction, the laser beam is a laser beam having a uniform energy distribution, and the laser beam is irradiated while moving relative to the irradiated object.

In the above structure, the laser is a continuous wave or pulsed solid laser or gas laser. Examples of the solid-state laser include a continuous wave or pulsed YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandride laser, Ti: sapphire laser, and the gas laser. Examples thereof include a continuous wave or pulsed excimer laser, an Ar laser, and a Kr laser.

  In the above configuration, it is preferable that the laser light is converted into a harmonic by a nonlinear optical element.

  In addition, in the structure of the invention relating to the method for manufacturing a semiconductor device disclosed in this specification, the laser light is laser light having a uniform energy distribution in a first direction that is perpendicular to the traveling direction of the laser light. The optical path length to the irradiation surface of the laser light is controlled so that the condensing position of the laser light is on the irradiation surface or a plane in the vicinity thereof, with respect to the traveling direction of the laser light and the first direction. In the second direction, which is a perpendicular direction, the laser beam is a laser beam having a uniform energy distribution, and the laser beam is irradiated while moving relative to the semiconductor film.

In the above structure, the laser is a continuous wave or pulsed solid laser or gas laser. Examples of the solid-state laser include a continuous wave or pulsed YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandride laser, Ti: sapphire laser, and the gas laser. Examples thereof include a continuous wave or pulsed excimer laser, an Ar laser, and a Kr laser.

  In the above configuration, it is preferable that the laser light is converted into a harmonic by a nonlinear optical element.

  In the above structure, the semiconductor film is a film containing silicon.

  The present invention is very effective for easily performing optical adjustment by shortening the optical path length of the optical system. It is also very effective when forming a laser beam having a length corresponding to the length of the large-area substrate. In order to perform uniform annealing efficiently, it is an urgent task to irradiate a large area substrate with laser light in one direction relatively in one direction. This is because the longer the length, the greater the difference in the incident position and the incident angle with respect to the lens, and the easier the field curvature. Uniform annealing is very important to make the properties of the irradiated object uniform. For example, if the object to be irradiated is a semiconductor film, the film quality of the uniformly annealed semiconductor film becomes uniform, and variations in electrical characteristics of TFTs manufactured using such a semiconductor film are reduced. It is possible to reduce. In addition, the operating characteristics and reliability of a semiconductor device manufactured from such a TFT can be improved.

By adopting the configuration of the present invention, the following basic significance can be obtained.
(A) It is possible to form a laser beam having a uniform energy distribution on the irradiation surface or a plane in the vicinity thereof. Furthermore, it is possible to form a laser beam having a longer length in the longitudinal direction than that in the past. This is particularly effective for large area substrates.
(B) The throughput can be improved.
(C) An optical system having a short optical path length can be obtained. Therefore, optical adjustment can be easily performed, the footprint can be suppressed, and the apparatus can be downsized.
Moreover, even if it installs in the clean room where the cost per unit area is very high, it becomes possible to hold down cost.
(D) In a semiconductor device typified by an active matrix liquid crystal display device, the operating characteristics and reliability of the semiconductor device can be improved while satisfying the above advantages. Furthermore, the manufacturing cost of the semiconductor device can be reduced.

  In the present embodiment, a method of correcting the deviation of the light collection position even when the optical path length is as short as 2821.7 mm will be described with reference to FIGS. 6 and 7. Here, an optical system for shaping a laser beam emitted from a laser into a linear beam having a length of 300 mm will be described. However, the present invention does not limit the length of the linear beam to 300 mm. The same applies to the case of long and short cases. Further, the optical path length is not limited to the above.

In the present specification, the description of the lens arrangement assumes that the traveling direction of the laser light is the front. The lens has a laser beam incident side as a first surface and an emission side as a second surface, the radius of curvature of the first surface is represented by R ₁ , and the radius of curvature of the second surface is represented by R ₂ . The sign of the radius of curvature to be used is negative when the center of curvature is on the laser beam incident side as viewed from the lens, positive when it is on the emission side, and ∞ for the plane. Further, all the lenses used are made of synthetic quartz glass (refractive index: 1.485634), but are not limited thereto. Moreover, if the coating applied to the surface of the synthetic quartz glass is changed to an appropriate one depending on the wavelength of the laser to be used, it can be applied to various lasers.

  FIG. 4A shows an optical system viewed from the vertical direction in the long direction, and FIG. 4B shows an optical system viewed from the vertical direction in the short direction.

Laser light emitted from the laser 1301 is magnified approximately twice in both the long and short directions by a beam expander. The beam expander is particularly effective when the shape of the laser beam emitted from the laser is small, and may not be used depending on the size of the laser beam.

  The laser light emitted from the beam expander is incident on cylindrical lens arrays 1403a and 1403b and a cylindrical lens 1404, which are first forming means. These three lenses are arranged so that the curvature is parallel to the longitudinal direction. Further, a toroidal lens 1506b as a second forming means is installed. The radius of curvature is preferably 13,000 to 18000. With these lenses, the energy of the laser light is made uniform in the longitudinal direction.

  The laser light emitted from the cylindrical lens 1404 is transmitted through cylindrical lens arrays 1405a and 1405b, which are third forming means, and is incident on the cylindrical lens 1406a and the toroidal lens 1506b. With these lenses, the energy distribution of the laser light is made uniform in the short direction and simultaneously shortened in the short direction.

  FIG. 7 shows a simulation result of the energy distribution of the linear beam on the irradiation surface 1308 formed by such an optical system. In FIG. 7, the horizontal axis indicates the length in the short direction, and the vertical axis indicates the length in the long direction. From FIG. 7, the central portion and both ends in the longitudinal direction of the linear beam have the same width. This corresponds to the fact that the condensing positions coincide on the irradiation surface. That is, it can be seen that the uniformity of the energy distribution is good.

  By annealing a semiconductor film using such a laser irradiation apparatus, the semiconductor film can be crystallized, a crystalline semiconductor film can be obtained by improving crystallinity, or an impurity element can be activated. .

  In the present embodiment, a toroidal lens is used as the third forming means. However, the present invention is not limited to this, and a lens having a negative curvature radius on the first surface or a curvature radius on the second surface is positive. It may be a lens, or may be a cylindrical lens in which these curvatures are only in the direction parallel to the longitudinal direction. In addition, a concave lens, a crossed cylindrical lens, or the like can be used.

  In this embodiment, the deviation of the condensing position at both ends of the laser beam is corrected by changing the lens closest to the irradiation surface or inserting a new lens. Of course not.

  In the present embodiment, laser light having a linear shape on the irradiation surface is formed, but the present invention is not limited to a linear shape. For example, in FIG. 6, the cylindrical lens arrays 1403a and 1403b and the cylindrical lens arrays 1405a and 1405b have a function of enlarging in the long and short directions, but the cylindrical lens array 1403b and the cylindrical lens array 1405b are removed. Since the laser beam is not enlarged, a laser beam having an aspect ratio smaller than that of the laser beam formed by the optical system shown in FIG. 6 is formed. Further, since it differs depending on the type of laser emitted from the laser, even if it is molded by an optical system, it is easily affected by the original shape. For example, the shape of a laser beam emitted from a XeCl excimer laser (wavelength 308 nm, pulse width 30 ns) is a rectangular shape of 10 mm × 30 mm (both half-value width in the beam profile), and the shape of the laser beam emitted from a solid-state laser is When the rod shape is cylindrical, the shape is circular, and when the rod shape is slab type, the shape is rectangular. In any shape, there is no problem as long as the energy density is sufficient for annealing the irradiated object, and the present invention can be applied.

  The present invention configured as described above will be described in more detail with reference to the following examples.

  In this embodiment, an example is shown in which the present invention is applied when the optical path length of an optical system for shaping laser light into a linear shape is reduced. In the description of the lens arrangement, the traveling direction of the laser light is assumed to be the front.

  First, an optical system having an optical path length of 5065.2 mm for producing a linear beam having a length of 300 mm in the longitudinal direction will be described. FIG. 2a shows an optical system viewed from the vertical direction in the longitudinal direction, and FIG. 2b shows an optical system viewed from the vertical direction in the short direction.

The laser beam emitted from the laser 1301, the radius 50mm, thickness 7mm, R ₁ = -220mm, radius 50mm with a spherical lens 1302a and 1302a of R ₂ = ∞ at the position of 400 mm, thickness 7 mm, R ₁ = ∞ , R ₂ = −400 mm, the lens is magnified approximately twice in both the long and short directions by a spherical lens 1302b. The two lenses 1302a and 1302b having the function of enlarging the size of the laser light in this way are called beam expanders. In many cases, a plurality of mirrors are placed to fold the optical path from the laser to the front of the lens positioned after the beam expander.

The laser light emitted from the beam expander enters the cylindrical lens array 1303a disposed 50 mm ahead of the beam expander, passes through the cylindrical lens array 1303b located 88 mm forward, and then enters the cylindrical lens 1304 disposed 120 mm forward. . The cylindrical lens array 1303a includes 40 cylindrical lenses having a length of 60 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = 28 mm, and R ₂ = ∞. The cylindrical lens array 1303b includes 40 cylindrical lenses having a length of 60 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = -13.33 mm, and R ₂ = ∞. The cylindrical lens 1304 is a cylindrical lens having a length of 150 mm, a width of 60 mm, a thickness of 20 mm, R ₁ = 2140 mm, and R ₂ = ∞. Cylindrical lens arrays 1303a and 1303b and cylindrical lens 1304 are all arranged so that the curvature is parallel to the longitudinal direction. By these three lenses, the energy is made uniform in the longitudinal direction of the laser beam.

The laser light emitted from the cylindrical lens 1304 enters the cylindrical lens array 1305a that is 395 mm in front of the cylindrical lens 1304, then passes through the cylindrical lens array 1305b that is 65 mm in front, and then enters the cylindrical lens 1306 that is 1600 mm in front. The cylindrical lens array 1305a includes 16 cylindrical lenses having a length of 150 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = 100 mm, and R ₂ = ∞. The cylindrical lens array 1305b includes 16 cylindrical lenses having a length of 150 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = ∞, and R ₂ = 80 mm. The cylindrical lens 1306 is a cylindrical lens having a length of 900 mm, a width of 60 mm, a thickness of 20 mm, R ₁ = ∞, and R ₂ = −486 mm. The cylindrical lens arrays 1305a and 1305b and the cylindrical lens 1306 are all arranged so that their curvatures are parallel to the short direction. With these three lenses, the laser light is made uniform in energy in the short direction and at the same time the width is reduced, and a linear beam having a width of 2 mm is formed 800 mm in front of the cylindrical lens 1306.

A doublet cylindrical lens 1307 is disposed 2050 mm ahead of the cylindrical lens 1306 in order to further reduce the linear beam having a width of 2 mm in the short direction. The doublet cylindrical lens 1307 includes two cylindrical lenses 1307a and 1307b. The cylindrical lens 1307a is a cylindrical lens having a length of 400 mm, a width of 70 mm, a thickness of 10 mm, R ₁ = 125 mm, and R ₂ = 77 mm. The cylindrical lens 1307b is a cylindrical lens having a length of 400 mm, a width of 70 mm, a thickness of 10 mm, R ₁ = 97 mm, and R ₂ = −200 mm. Further, the cylindrical lenses 1307a and 1307b are provided with an interval of 5.5 mm. Both the cylindrical lenses 1305a and 1305b are arranged so that the curvature is parallel to the short direction.

  The simulation result of the laser beam formed by such an optical system is shown in FIG. In FIG. 3, the horizontal axis represents the length in the short direction, and the vertical axis represents the length in the long direction. As shown in FIG. 3, a linear beam having a length of 300 mm and a width of 0.4 mm is formed on a plane of 237.7 mm in front of the doublet cylindrical lens 1307, and the center width and both ends of the linear beam have the same width in the longitudinal direction. It has become. This corresponds to the fact that the condensing positions coincide on the irradiation surface. That is, it can be seen that the uniformity of the energy distribution is good.

  Next, an optical system for shortening the optical system having the optical path length of 5065.2 mm described above to 2400 mm and forming a linear beam having a length of 300 mm will be described. FIG. 4A shows an optical system viewed from the vertical direction in the vertical direction, and FIG. 4B shows an optical system viewed from the vertical direction in the short direction.

The laser light emitted from the laser 1301 is a beam expander (radius 50 mm, thickness 7 mm, R ₁ = −220 mm, R ₂ = ∞, the spherical lenses 1302 a and 1302 a are located 400 mm in radius, 50 mm, thickness 7 mm, R The spherical lens 1303b) with ₁ = ∞ and R ₂ = −400 mm is magnified approximately twice in both the long and short directions.

The laser light emitted from the beam expander is incident on a cylindrical lens array 1403a disposed 50 mm ahead of the beam expander, then passes through a cylindrical lens array 1403b 41 mm forward, and is further incident on a cylindrical lens 1404 disposed 120 mm forward. . The cylindrical lens array 1403a is configured by arranging 40 cylindrical lenses having a length of 150 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = 11.5 mm, and R ₂ = ∞. The cylindrical lens array 1403b includes 40 cylindrical lenses having a length of 150 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = -11 mm, and R ₂ = ∞. The cylindrical lens 1404 is a cylindrical lens having a length of 150 mm, a width of 60 mm, a thickness of 20 mm, R ₁ = 1078 mm, and R ₂ = ∞. Cylindrical lens arrays 1403a and 1403b and cylindrical lens 1404 are both arranged so that the curvature is parallel to the longitudinal direction. With these three lenses, the energy of the laser light is made uniform in the longitudinal direction.

The laser light emitted from the cylindrical lens 1404 enters the cylindrical lens array 1405a that is 870 mm in front of the cylindrical lens 1404, then passes through the cylindrical lens array 1405b that is 70 mm in front, and further enters the doublet cylindrical lens 1406 that is 1000 mm in front. The cylindrical lens array 1405a includes 16 cylindrical lenses having a length of 400 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = 100 mm, and R ₂ = ∞. The cylindrical lens array 1405b includes 16 cylindrical lenses having a length of 400 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = ∞, and R ₂ = 80 mm. The doublet cylindrical lens 1406 includes two cylindrical lenses 1406a and 1406b. The cylindrical lens 1406a is a cylindrical lens having a length of 400 mm, a width of 70 mm, a thickness of 10 mm, R ₁ = 125 mm, and R ₂ = 77 mm. The cylindrical lens 1406b is a cylindrical lens having a length of 400 mm, a width of 70 mm, a thickness of 10 mm, R ₁ = 97 mm, and R ₂ = −200 mm. Further, the cylindrical lenses 1406a and 1406b are provided with an interval of 5.5 mm. Both the cylindrical lenses 1406a and 1406b are arranged so that the curvature is parallel to the short direction.

  By the cylindrical lens arrays 1405a and 1405b and the doublet cylindrical lens 1406, the energy distribution of the laser light is made uniform in the short direction and simultaneously shortened in the short direction.

  The simulation result of the laser beam on the irradiation surface 1308 formed by such an optical system is as shown in FIG. In FIG. 5, the horizontal axis represents the length in the short direction, and the vertical axis represents the length in the long direction. From FIG. 5, a linear beam having a length of 300 mm and a width of 0.4 mm is formed on the irradiation surface 1308 191.9 mm ahead of the doublet cylindrical lens 1406, and both ends of the linear beam in the longitudinal direction are compared with the vicinity of the center. Spreading. This corresponds to the fact that the condensing position is shifted on the irradiation surface. That is, it can be seen that the uniformity of the energy distribution has deteriorated.

  A method for solving this will be described with reference to FIG. FIG. 6a shows an optical system viewed from the vertical direction in the longitudinal direction, and FIG. 6b shows an optical system viewed from the vertical direction in the short direction. Instead of the cylindrical lens 1406b of the doublet cylindrical lens 1406 in FIG. 4, a lens 1506b having a curvature in the longitudinal direction of the second surface of the cylindrical lens 1406b is installed. A lens having a different curvature in the long direction and the short direction on one surface of the lens, such as 1506b, is referred to as a toroidal lens. However, the radius of curvature is 15000 mm and the center of curvature is on the laser beam emission side. The radius of curvature is preferably 13,000 to 18000.

FIG. 7 shows a simulation result of laser light formed by such an optical system. In FIG. 7, the horizontal axis indicates the length in the short direction, and the vertical axis indicates the length in the long direction. From FIG. 7, it can be seen that a linear beam having the same width is formed near the center and both ends in the longitudinal direction on the irradiation surface 1308 disposed 191.2 mm in front of the toroidal lens. This corresponds to the fact that the condensing positions coincide on the irradiation surface.
That is, it can be seen that the uniformity of the energy distribution is good.

  In the first embodiment, the second lens 1406b of the doublet cylindrical lens is replaced with a toroidal lens to eliminate the deviation of the light collection position. However, in this embodiment, a new cylindrical lens is used without changing the shape of the doublet cylindrical lens 1406. A method of eliminating the deviation of the light collecting position by adding one sheet will be described with reference to FIG. FIG. 9a shows an optical system viewed from the vertical direction in the long direction, and FIG. 9b shows an optical system viewed from the vertical direction in the short direction.

A cylindrical lens 1507 is added 40 mm in front of the doublet cylindrical lens 1406 in the optical system (FIGS. 4a and 4b) shown in the first embodiment. The cylindrical lens 1507 has a length of 400 mm, a width of 70 mm, a thickness of 20 mm, R ₁ = ∞, R ₂ = 7000 mm, and R ₂ is preferably 4000 to 10,000. The cylindrical lens 1507 is disposed so that the curvature is parallel to the longitudinal direction. (FIG. 9) FIG. 10 shows the simulation result of the energy distribution of the linear beam irradiated on the flat surface 1508 arranged 137.5 mm ahead of the cylindrical lens 1507. In FIG. 10, the horizontal axis indicates the length in the short direction, and the vertical axis indicates the length in the long direction. As shown in FIG. 10, the central portion and both ends in the longitudinal direction of the linear beam have the same width. This corresponds to the fact that the condensing positions coincide on the irradiation surface. That is, it can be seen that the uniformity of the energy distribution is good.

  In this embodiment, an example of an optical system for forming a linear beam having a length in the longitudinal direction of 1000 mm on the irradiation surface will be described. An optical system in which the long direction of the linear beam is viewed from the vertical is shown in FIG. 11a, and an optical system in which the short direction is viewed from the vertical is shown in FIG. 11b.

The laser light emitted from the laser 1301 is a beam expander (radius 50 mm, thickness 7 mm, R ₁ = −220 mm, R ₂ = ∞, the spherical lenses 1302 a and 1302 a are located 400 mm in radius, 50 mm, thickness 7 mm, R The spherical lens 1303b) with ₁ = ∞ and R ₂ = −400 mm is magnified approximately twice in both the long and short directions.

The cylindrical lens array 1003 includes 40 cylindrical lenses having a length of 150 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = 4 mm, and R ₂ = ∞. The cylindrical lens 1004 is a cylindrical lens having a length of 150 mm, a width of 450 mm, a thickness of 15 mm, R ₁ = 2140 mm, and R ₂ = ∞. Both the cylindrical lens array 1003 and the cylindrical lens 1004 are arranged so that the curvature is parallel to the longitudinal direction.

  The laser light emitted from the beam expander is incident on a cylindrical lens array 1003 50 mm ahead of the lens 1002b, the laser light is divided, and the laser light is synthesized by the cylindrical lens 1004 15mm ahead, and is long on the irradiation surface 1308. The energy distribution is made uniform in the scale direction. A combination of a cylindrical lens array and a cylindrical lens that makes the energy distribution of laser light uniform is called a beam homogenizer. The length of the linear beam is determined by the combination of the curvatures of these two lenses.

The laser light emitted from the cylindrical lens 1004 is incident on a cylindrical lens array 1005 a that is 395 mm in front of the cylindrical lens 1004, passes through the cylindrical lens array 1005 b that is 65 mm in front, and is incident on a cylindrical lens 1006 that is 1600 mm in front. The cylindrical lens array 1005a has 16 cylindrical lenses having a length of 900 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = 100 mm, and R ₂ = ∞. The cylindrical lens array 1005b has 16 cylindrical lenses each having a length of 900 mm, a width of 2 mm, a thickness of 5 mm, R ₁ = ∞, and R ₂ = 80 mm. The cylindrical lens 1306 is a cylindrical lens having a length of 900 mm, a width of 60 mm, a thickness of 20 mm, R ₁ = ∞, and R ₂ = −486 mm.
The cylindrical lens arrays 1005a and 1005b and the cylindrical lens 1006 are all arranged so that the curvature is parallel to the short direction. With these three lenses, the energy of the laser light is made uniform in the short direction and at the same time the length in the short direction is reduced, and a linear beam having a width of 2 mm is formed 1000 mm in front of the cylindrical lens 1306.

A crossed cylindrical lens Crossed Cylindrical Lens 1007 is disposed 2050 mm ahead of the cylindrical lens 1006. The first surface of the crossed cylindrical lens 1007 has a curvature in the short direction (R ₁ = 95 mm), and has the effect of further reducing the above-described linear beam having a length of 2 mm in the short direction. The second surface of the crossed cylindrical lens 1007 is given a curvature of R ₂ = 7500 mm in the longitudinal direction. R ₂ is preferably 7000 to 8000 mm. The crossed cylindrical lens 1007 is arranged such that the curvature of the first surface is parallel to the short direction, and the size is 900 mm in the long direction, 60 mm in the short direction, and 30 mm in thickness.

  FIG. 13 shows the simulation result of the energy distribution of the linear beam obtained when the second surface of the lens 1007 has a curvature (corresponding to having a curvature in the longitudinal direction of the linear beam) in FIG. The simulation result of the energy distribution of the linear beam obtained when a 2nd surface does not have a curvature is represented. 12 and 13, the horizontal axis indicates the length in the short direction, and the vertical axis indicates the length in the long direction. FIG. 12 shows a linear beam having a length of 1000 mm and a width of 0.4 mm on the irradiation surface 1308 of 224 mm in front of the crossed cylindrical lens 1007, and the central portion and both ends in the longitudinal direction of the linear beam have the same width. However, in FIG. 13, it can be seen that both ends in the longitudinal direction are wider than near the center. This means that in FIG. 12, the condensing position on the irradiated surface is the same and the energy distribution is uniform, but in FIG. 13, the condensing position is shifted on the irradiated surface and the energy distribution is non-uniform. To do. When both are compared, it can be seen that a linear beam having a uniform energy distribution of a length of 1000 mm can be obtained by using the optical system of the present invention.

  In this embodiment, an example in which a linear beam having a length in the long direction of 1000 mm is formed using an optical system different from that in the third embodiment will be described. In addition, the optical system which looked at the longitudinal direction of this Example from the perpendicular | vertical is shown to FIG. 14a, and the optical system which looked at the short direction from the perpendicular | vertical is shown in FIG. However, since the laser 1301, the beam expanders 1302a and 1302b, the cylindrical array lens 1003, the cylindrical lens arrays 1005a and 1005b, and the cylindrical lens 1306 shown in the first embodiment are the same as those in the third embodiment, the description is omitted. Omitted.

Laser light emitted from the laser 1301 is magnified approximately twice in the long and short directions by the beam expanders 1302a and 1302b, and the laser light emitted from the beam expander is a cylindrical lens disposed 50 mm in front of the beam expander. After entering the array 1003, the light enters the cylindrical lens 1104 15mm ahead. The cylindrical lens 1104 is a cylindrical lens having a length of 150 mm, a width of 60 mm, a thickness of 20 mm, R ₁ = 2140 mm, and R ₂ = ∞. Both the cylindrical lens array 1103 and the cylindrical lens 1104 are arranged so that the curvature is parallel to the longitudinal direction. With these two lenses, the laser beam is made uniform in energy in the longitudinal direction.

  The laser light emitted from the cylindrical lens 1104 enters the cylindrical lens array 1005a that is 395 mm ahead of the cylindrical lens 1004, then passes through the cylindrical lens array 1005b that is 65 mm forward, and then enters the cylindrical lens 1006 that is 1600 mm ahead. The cylindrical lens arrays 1005a and 1005b and the cylindrical lens 1006 are all arranged so that the curvature is parallel to the short direction. By these three lenses, the laser light is made uniform in energy in the short direction and at the same time the width is reduced, and a linear beam having a length of 2 mm in the short direction is formed 1000 mm in front of the cylindrical lens 1006.

In order to further reduce the above-described linear beam having a length of 2 mm in the short direction, a cylindrical lens 1107 is arranged 2050 mm in front of the cylindrical lens 1006. The cylindrical lens 1107 is a cylindrical lens having a length of 900 mm, a width of 60 mm, a thickness of 30 mm, R ₁ = 95 mm, and R ₂ = ∞, and is arranged so that the curvature is parallel to the short direction. FIG. 13 shows a simulation result of the linear beam formed on the plane when nothing exists up to the plane 1308 of 224 mm in front of the cylindrical lens 1107. In FIG. 13, both ends of the linear beam in the longitudinal direction are wider than near the center. This corresponds to the fact that the condensing positions coincide on the irradiation surface. That is, it can be seen that the energy distribution is uneven.

Therefore, in order to eliminate the deviation of the condensing position at both ends of the laser light, the cylindrical lens 1108 is disposed 44 mm in front of the cylindrical lens 1107.
The cylindrical lens 1108 is a cylindrical lens having a length of 60 mm, a width of 900 mm, a thickness of 30 mm, R ₁ = ∞, and R ₂ = 7000 mm, and is arranged so that the curvature is parallel to the longitudinal direction. R ₂ is desirably 7000 to 8000 mm. FIG. 15 shows a simulation result of laser light formed by such an optical system. In FIG. 15, the horizontal axis indicates the length in the short direction, and the vertical axis indicates the length in the long direction. FIG. 15 shows a linear beam having a length of 1000 mm and a width of 0.4 mm on an irradiation surface 1308 160 mm in front of the cylindrical lens 1108, and the central portion and both ends of the linear beam have the same width in the longitudinal direction. Yes. This corresponds to the fact that the condensing positions coincide on the irradiation surface. That is, it can be seen that the uniformity of the energy distribution is good.

  In the present embodiment, a method for eliminating the deviation of the light collection position by adding a cylindrical lens having a shape different from that of the cylindrical lens 1108 shown in Embodiment 4 will be described. FIG. 16a shows an optical system of the present embodiment viewed from the vertical direction in the long direction, and FIG. 16b shows an optical system viewed from the vertical direction in the short direction.

In the optical system (FIG. 14) shown in Example 3, the cylindrical lens 1108 is replaced with the cylindrical lens 1208 in FIG. The cylindrical lens 1208 is a cylindrical lens having a length of 60 mm, a width of 900 mm, a thickness of 30 mm, R ₁ = −8000 mm, and R ₂ = ∞, and is arranged so that the curvature is parallel to the longitudinal direction. R ₁ is preferably -8000 to -7000. FIG. 17 shows a simulation result of laser light formed by such an optical system. In FIG. 17, the horizontal axis indicates the length in the short direction, and the vertical axis indicates the length in the long direction. FIG. 17 shows a linear beam having a length of 1000 mm and a width of 0.4 mm on an irradiation surface 1308 160 mm in front of the cylindrical lens 1208, and the central portion and both ends of the linear beam have the same width in the longitudinal direction. Yes. This corresponds to the fact that the condensing positions coincide on the irradiation surface. That is, it can be seen that the uniformity of the energy distribution is good.

  In this embodiment, a case where laser annealing is performed on a large-area substrate will be described.

  As shown in FIG. 29A, in an active matrix liquid crystal display device or the like, TFTs for a pixel portion and a driver circuit (a source driver portion and a gate driver portion) may be formed over one glass substrate. However, in order to improve throughput, a large area substrate is often used to manufacture a plurality of liquid crystal display panel panels from the large area substrate. Therefore, in this embodiment, a method of forming a linear beam having a longer length in the longitudinal direction than before and irradiating it while moving it relative to a large area substrate will be described.

  First, according to any one of the first to fifth embodiments, a linear beam having a longer length in the longitudinal direction than the conventional one and a uniform energy distribution on the irradiation surface or a plane in the vicinity thereof is formed. The linear beam is irradiated while moving relative to the large area substrate. At this time, since the length of the linear beam in the longitudinal direction is longer than before, the laser beam can be annealed on the entire surface of the large area substrate only by moving in one direction with respect to the large area substrate. Since the conventional movement in at least two directions and multiple irradiations are not required, the throughput is remarkably improved. In addition, it is possible to realize uniform annealing on the entire surface without forming a region where the laser light irradiation is performed a plurality of times or a region where the laser light irradiation is not performed.

  In this embodiment, a method for manufacturing an active matrix substrate will be described with reference to FIGS. In this specification, a substrate in which a pixel portion having a CMOS circuit, a driver circuit, a pixel TFT, and a storage capacitor is formed over the same substrate is referred to as an active matrix substrate for convenience.

  First, in this embodiment, a substrate 400 made of glass such as barium borosilicate glass or alumino borosilicate glass is used. Note that the substrate 400 may be a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used. Note that in the present invention, a long-area substrate can be used because annealing can be performed using a linear beam having a longer longitudinal direction and a uniform energy distribution.

  Next, a base film 401 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate 400 by a known means. Although a two-layer structure is used as the base film 401 in this embodiment, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used.

  Next, semiconductor layers 402 to 406 are formed over the base film. The semiconductor layers 402 to 406 are formed by forming a semiconductor film with a thickness of 25 to 80 nm (preferably 30 to 60 nm) by a known means (such as sputtering, LPCVD, or plasma CVD), and crystallizing by laser crystallization. Make it. In the laser crystallization method, any one of Embodiments 1 to 5 is applied, and the semiconductor film is irradiated with laser light emitted from the laser. Of course, not only the laser crystallization method but also other known crystallization methods (thermal crystallization method using an RTA or furnace annealing furnace, thermal crystallization method using a metal element that promotes crystallization, etc.) You may go. Then, the obtained crystalline semiconductor film is patterned into a desired shape to form semiconductor layers 402 to 406. Examples of the semiconductor film include an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, and the like, and a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film may be applied.

In this embodiment, a 55 nm amorphous silicon film is formed by plasma CVD. The amorphous silicon film is dehydrogenated (500 ° C., 1 hour), and then laser light emitted from a continuous wave YVO ₄ laser with an output of 10 W is converted into a second harmonic by a non-linear optical element. After that, a rectangular beam is formed and irradiated by the optical system shown in any one of Examples 1 to 5. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed by moving the stage relative to the laser light at a speed of about 10 to 2000 cm / s to form a crystalline silicon film. Then, the semiconductor layers 402 to 406 are formed by a patterning process using a photolithography method.

  Further, after forming the semiconductor layers 402 to 406, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

  Next, a gate insulating film 407 covering the semiconductor layers 402 to 406 is formed. The gate insulating film 407 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by plasma CVD or sputtering. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) with a thickness of 110 nm is formed by plasma CVD. Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) and O ₂ are mixed by a plasma CVD method to a reaction pressure of 40 Pa, a substrate temperature of 300 to 400 ° C., and a high frequency (13.56 MHz) power density of 0. It can be formed by discharging at 5 to 0.8 W / cm ² . The silicon oxide film thus produced can obtain good characteristics as a gate insulating film by thermal annealing at 400 to 500 ° C. thereafter.

Next, a first conductive film 408 with a thickness of 20 to 100 nm and a second conductive film 409 with a thickness of 100 to 400 nm are stacked over the gate insulating film 407. In this embodiment, a first conductive film 408 made of a TaN film with a thickness of 30 nm and a second conductive film 409 made of a W film with a thickness of 370 nm are stacked. The TaN film is formed by sputtering, and is sputtered in a nitrogen-containing atmosphere using a Ta target. The W film was formed by sputtering using a W target. In addition, it can be formed by a thermal CVD method using tungsten hexafluoride (WF ₆ ). In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and the resistivity of the W film is desirably 20 μΩcm or less.

  In this embodiment, the first conductive film 408 is TaN and the second conductive film 409 is W. However, there is no particular limitation, and all are Ta, W, Ti, Mo, Al, Cu, Cr, Nd. You may form with the element selected from these, or the alloy material or compound material which has the said element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used.

Next, resist masks 410 to 415 are formed by photolithography, and a first etching process is performed to form electrodes and wirings. The first etching process is performed under the first and second etching conditions. (FIG. 18 (B)) In this example, ICP (Inductively Coupled Plasma) etching is used as the first etching condition, and CF ₄ , Cl ₂ and O ₂ are used as etching gases. Each gas flow ratio is 25:25:10 (sccm), 500 W of RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa, plasma is generated, and etching is performed. 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The W film is etched under the first etching condition so that the end portion of the first conductive layer is tapered.

Thereafter, the masks 410 to 415 made of resist are changed to the second etching conditions without being removed, CF ₄ and Cl ₂ are used as etching gases, and the respective gas flow ratios are set to 30:30 (sccm). Etching is performed for about 30 seconds by applying 500 W RF (13.56 MHz) power to the coil-type electrode at a pressure of 1 Pa to generate plasma. 20 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. Note that in order to perform etching without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%.

  In the first etching process, the shape of the mask made of resist is made suitable, and the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes. The angle of this taper portion is 15 to 45 °. Thus, the first shape conductive layers 417 to 422 (the first conductive layers 417 a to 422 a and the second conductive layers 417 b to 422 b) composed of the first conductive layer and the second conductive layer by the first etching treatment. Form. Reference numeral 416 denotes a gate insulating film, and a region not covered with the first shape conductive layers 417 to 422 is etched and thinned by about 20 to 50 nm.

Next, a second etching process is performed without removing the resist mask.
Here, CF ₄ , Cl _2, and O ₂ are used as etching gases, and the W film is selectively etched. At this time, second conductive layers 428b to 433b are formed by a second etching process. On the other hand, the first conductive layers 417a to 422a are hardly etched, and the second shape conductive layers 428 to 433 are formed.

Then, a first doping process is performed without removing the resist mask, and an impurity element imparting n-type conductivity is added to the semiconductor layer at a low concentration. The doping process may be performed by ion doping or ion implantation. The conditions of the ion doping method are a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁴ / cm ² and an acceleration voltage of 40 to 80 keV. In this embodiment, the dose is set to 1.5 × 10 ¹³ / cm ² and the acceleration voltage is set to 60 keV. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the conductive layers 428 to 433 serve as a mask for the impurity element imparting n-type, and the impurity regions 423 to 427 are formed in a self-aligning manner. An impurity element imparting n-type conductivity is added to the impurity regions 423 to 427 in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ³ .

After removing the resist mask, new resist masks 434a to 434c are formed, and the second doping process is performed at an acceleration voltage higher than that of the first doping process. The conditions of the ion doping method are a dose amount of 1 × 10 ¹³ to 1 × 10 ¹⁵ / cm ² and an acceleration voltage of 60 to 120 keV. In the doping treatment, the second conductive layers 428b to 432b are used as masks against the impurity element, and doping is performed so that the impurity element is added to the semiconductor layer below the tapered portion of the first conductive layer. Subsequently, the third doping process is performed by lowering the acceleration voltage than the second doping process to obtain the state of FIG. The conditions of the ion doping method are a dose amount of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ / cm ² and an acceleration voltage of 50 to 100 keV. By the second doping process and the third doping process, the low-concentration impurity regions 436, 442, and 448 overlapping with the first conductive layer have n-type conductivity in a concentration range of 1 × 10 ^{18 to} 5 × 10 ¹⁹ / cm ^3. An impurity element imparting n-type is added to the high concentration impurity regions 435, 438, 441, 444, and 447 in a concentration range of 1 × 10 ^{19 to} 5 × 10 ²¹ / cm ^3. .

  Needless to say, by setting the acceleration voltage to be appropriate, the second and third doping processes can be performed in a single doping process to form the low-concentration impurity region and the high-concentration impurity region.

Next, after removing the resist mask, new resist masks 450a to 450c are formed, and a fourth doping process is performed. By this fourth doping process, impurity regions 453 to 456, 459, and 460 in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to the semiconductor layer that becomes the active layer of the p-channel TFT are formed. To do. The second conductive layers 428a to 432a are used as masks against the impurity element, and an impurity element imparting p-type is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 453 to 456, 459, and 460 are formed by an ion doping method using diborane (B ₂ H ₆ ). (FIG. 19B) In the fourth doping process, the semiconductor layer forming the n-channel TFT is covered with masks 450a to 450c made of resist. By the first to third doping treatments, phosphorus is added to the impurity regions 438 and 439 at different concentrations, and the concentration of the impurity element imparting p-type is set to 1 × 10 ^{19 to} 5 in any of the regions. By performing the doping treatment so as to be × 10 ²¹ atoms / cm ³ , no problem arises because it functions as the source region and drain region of the p-channel TFT.

  Through the above steps, impurity regions are formed in the respective semiconductor layers.

  Next, the resist masks 450 a to 450 c are removed, and a first interlayer insulating film 461 is formed. The first interlayer insulating film 461 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film having a thickness of 150 nm is formed by a plasma CVD method. Needless to say, the first interlayer insulating film 461 is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

Next, as shown in FIG. 19C, laser light irradiation is performed to recover the crystallinity of the semiconductor layers and to activate the impurity elements added to the respective semiconductor layers. At this time, the energy density of the laser beam is 0.01 to 100 MW / cm ² about it (preferably 0.01~10MW / cm ²⁾ is required, 10 to 2000 cm / s relatively substrate relative to the laser beam Move at a speed of. In addition to the laser annealing method, a thermal annealing method, a rapid thermal annealing method (RTA method), or the like can be applied.

  Further, heat treatment may be performed before the first interlayer insulating film is formed. However, when the wiring material used is weak against heat, it is activated after an interlayer insulating film (insulating film containing silicon as a main component, for example, a silicon nitride film) is formed to protect the wiring as in this embodiment. It is preferable to perform the conversion treatment.

  Then, hydrogenation can be performed by heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the first interlayer insulating film 461. The semiconductor layer can be hydrogenated regardless of the presence of the first interlayer insulating film. As other means for hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) or heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen may be performed. .

  Next, a second interlayer insulating film 462 made of an inorganic insulating film material or an organic insulating material is formed over the first interlayer insulating film 461. In this embodiment, an acrylic resin film having a thickness of 1.6 μm is formed, but a film having a viscosity of 10 to 1000 cp, preferably 40 to 200 cp, and having a surface with unevenness is used.

  In this embodiment, in order to prevent specular reflection, the surface of the pixel electrode is formed with the unevenness by forming the second interlayer insulating film having the unevenness on the surface. In addition, a convex portion may be formed in a region below the pixel electrode in order to make the surface of the pixel electrode uneven to achieve light scattering. In that case, since the convex portion can be formed using the same photomask as that of the TFT, it can be formed without increasing the number of steps. In addition, this convex part should just be suitably provided on the board | substrate of pixel part area | regions other than wiring and a TFT part. Thus, irregularities are formed on the surface of the pixel electrode along the irregularities formed on the surface of the insulating film covering the convex portions.

  Alternatively, a film whose surface is planarized may be used as the second interlayer insulating film 462. In that case, after forming the pixel electrode, adding a step such as a known sandblasting method or etching method to make the surface uneven, prevent specular reflection, and increase the whiteness by scattering the reflected light Is preferred.

In the driver circuit 506, wirings 464 to 468 that are electrically connected to the impurity regions are formed. Note that these wirings are formed by patterning a laminated film of a Ti film having a thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a thickness of 500 nm. Of course, not only a two-layer structure but also a single-layer structure or a laminated structure of three or more layers may be used. Further, the wiring material is not limited to Al and Ti.
For example, a wiring may be formed by patterning a laminated film in which Al or Cu is formed on a TaN film and a Ti film is further formed. (Fig. 20)

  In the pixel portion 507, a pixel electrode 470, a gate wiring 469, and a connection electrode 468 are formed. With this connection electrode 468, the source wiring (stacked layer of 443a and 443b) is electrically connected to the pixel TFT. In addition, the gate wiring 469 is electrically connected to the gate electrode of the pixel TFT. In addition, the pixel electrode 470 is electrically connected to the drain region 442 of the pixel TFT and further electrically connected to the semiconductor layer 458 functioning as one electrode forming a storage capacitor. Further, as the pixel electrode 471, it is desirable to use a highly reflective material such as a film containing Al or Ag as a main component or a laminated film thereof.

  As described above, a CMOS circuit including an n-channel TFT 501 and a p-channel TFT 502, a driver circuit 506 having an n-channel TFT 503, and a pixel portion 507 having a pixel TFT 504 and a storage capacitor 505 are formed over the same substrate. can do. Thus, the active matrix substrate is completed.

  The n-channel TFT 501 of the driver circuit 506 includes a channel formation region 437, a low-concentration impurity region 436 (GOLD region) that overlaps with the first conductive layer 428a that forms part of the gate electrode, and a high-concentration function as a source region or a drain region. An impurity region 452 and an impurity region 451 into which an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are introduced are provided. The p-channel TFT 502, which is connected to the n-channel TFT 501 and the electrode 466 to form a CMOS circuit, includes a channel formation region 440, a high-concentration impurity region 454 that functions as a source region or a drain region, and an impurity element that imparts n-type conductivity And an impurity region 453 into which an impurity element imparting p-type conductivity is introduced. In the n-channel TFT 503, a channel formation region 443, a low concentration impurity region 442 (GOLD region) overlapping with the first conductive layer 430a which forms part of the gate electrode, and a high concentration impurity functioning as a source region or a drain region The region 456 includes an impurity region 455 into which an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are introduced.

  The pixel TFT 504 in the pixel portion is provided with a channel formation region 446, a low concentration impurity region 445 (LDD region) formed outside the gate electrode, a high concentration impurity region 458 functioning as a source region or a drain region, and an n-type. An impurity region 457 into which an impurity element and an impurity element imparting p-type conductivity are introduced is provided. In addition, an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are added to the semiconductor layer functioning as one electrode of the storage capacitor 505. The storage capacitor 505 is formed of an electrode (stack of 432a and 432b) and a semiconductor layer using the insulating film 416 as a dielectric.

  In the pixel structure of this embodiment, the end portions of the pixel electrodes are arranged and formed so as to overlap the source wiring so that the gap between the pixel electrodes is shielded from light without using a black matrix.

  FIG. 21 shows a top view of the pixel portion of the active matrix substrate manufactured in this embodiment. In addition, the same code | symbol is used for the part corresponding to FIGS. A chain line A-A ′ in FIG. 20 corresponds to a cross-sectional view taken along the chain line A-A ′ in FIG. 21. Further, a chain line B-B ′ in FIG. 20 corresponds to a cross-sectional view taken along the chain line B-B ′ in FIG. 21.

  In this embodiment, a process for manufacturing a reflective liquid crystal display device from the active matrix substrate manufactured in Embodiment 7 will be described below. FIG. 22 is used for the description.

  First, after obtaining the active matrix substrate in the state of FIG. 20 according to Example 7, an alignment film 567 is formed on at least the pixel electrode 470 on the active matrix substrate of FIG. In this embodiment, before forming the alignment film 567, an organic resin film such as an acrylic resin film is patterned to form columnar spacers 572 for maintaining a substrate interval at a desired position. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.

  Next, a counter substrate 569 is prepared. Next, colored layers 570 and 571 and a planarization film 573 are formed over the counter substrate 569. The red colored layer 570 and the blue colored layer 571 are overlapped to form a light shielding portion. Further, the light shielding portion may be formed by partially overlapping the red colored layer and the green colored layer.

  In this example, the substrate shown in Example 7 is used. Accordingly, in FIG. 21 showing a top view of the pixel portion of the seventh embodiment, at least the gap between the gate wiring 469 and the pixel electrode 470, the gap between the gate wiring 469 and the connection electrode 468, and the gap between the connection electrode 468 and the pixel electrode 470 are shown. It is necessary to block light. In this example, the respective colored layers were arranged so that the light-shielding portions formed by the lamination of the colored layers overlapped at the positions where light shielding should be performed, and the counter substrate was bonded.

  As described above, the number of steps can be reduced by shielding the gap between the pixels with the light shielding portion formed by the lamination of the colored layers without forming a light shielding layer such as a black mask.

  Next, a counter electrode 576 made of a transparent conductive film was formed over the planarization film 573 in at least the pixel portion, an alignment film 574 was formed over the entire surface of the counter substrate, and a rubbing process was performed.

  Then, the active matrix substrate on which the pixel portion and the driver circuit are formed and the counter substrate are attached to each other with a sealant 568. A filler is mixed in the sealing material 568, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. Thereafter, a liquid crystal material 575 is injected between both substrates and completely sealed with a sealant (not shown). A known liquid crystal material may be used for the liquid crystal material 575. In this way, the reflection type liquid crystal display device shown in FIG. 22 is completed. If necessary, the active matrix substrate or the counter substrate is divided into a desired shape. Further, a polarizing plate (not shown) was attached only to the counter substrate. And FPC was affixed using the well-known technique.

Since the liquid crystal display device manufactured as described above is irradiated with laser light having a uniform energy distribution, the liquid crystal display device includes a TFT manufactured using a uniformly annealed semiconductor film. The operating characteristics and reliability of the device can be sufficient.
And such a liquid crystal display device can be used as a display part of various electronic devices.

  Note that this embodiment can be freely combined with Embodiments 1 to 7.

In this embodiment, an example in which a light-emitting device is manufactured using the method for manufacturing a TFT when manufacturing an active matrix substrate shown in Embodiment 7 will be described. In this specification, the light emitting device is a general term for a display panel in which a light emitting element formed on a substrate is sealed between the substrate and a cover material, and a display module including a TFT in the display panel. is there. Note that the light-emitting element is a layer (light-emitting layer) containing an organic compound that can obtain luminescence (Electro Luminescence) generated by applying an electric field.
And an anode layer and a cathode layer. In addition, luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, one of these, Or both luminescence is included.

  In the present specification, all layers formed between the anode and the cathode in the light emitting element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, a light emitting element has a structure in which an anode layer, a light emitting layer, and a cathode layer are sequentially laminated. In addition to this structure, an anode layer, a hole injection layer, a light emitting layer, a cathode layer, and an anode layer , A hole injection layer, a light emitting layer, an electron transport layer, a cathode layer and the like may be laminated in this order.

  FIG. 23 is a cross-sectional view of the light emitting device of this example. In FIG. 23, a switching TFT 603 provided over a substrate 700 is formed using the n-channel TFT 503 in FIG. Therefore, the description of the n-channel TFT 503 may be referred to for the description of the structure.

  Note that although a double gate structure in which two channel formation regions are formed is used in this embodiment, a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed may be used.

  A driver circuit provided on the substrate 700 is formed using the CMOS circuit of FIG. Therefore, for the description of the structure, the description of the n-channel TFT 501 and the p-channel TFT 502 may be referred to. In this embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.

  Further, the wirings 701 and 703 function as source wirings of the CMOS circuit, and the wiring 702 functions as a drain wiring. The wiring 704 functions as a wiring that electrically connects the source wiring 708 and the source region of the switching TFT, and the wiring 705 functions as a wiring that electrically connects the drain wiring 709 and the drain region of the switching TFT.

  Note that the current control TFT 604 is formed using the p-channel TFT 502 in FIG. Accordingly, the description of the p-channel TFT 502 may be referred to for the description of the structure. In this embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.

  A wiring 706 is a source wiring (corresponding to a current supply line) of the current control TFT, and 707 is an electrode that is electrically connected to the pixel electrode 711 by being overlaid on the pixel electrode 711 of the current control TFT.

  Reference numeral 711 denotes a pixel electrode (anode of the light emitting element) made of a transparent conductive film. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film. The pixel electrode 711 is formed on the flat interlayer insulating film 710 before forming the wiring. In this embodiment, it is very important to flatten the step due to the TFT using the flattening film 710 made of resin. Since the light emitting layer formed later is very thin, the presence of a step may cause a light emission failure. Therefore, it is desirable to planarize the pixel electrode before forming it so that the light emitting layer can be formed as flat as possible.

After the wirings 701 to 707 are formed, a bank 712 is formed as shown in FIG.
The bank 712 may be formed by patterning an insulating film or organic resin film containing silicon of 100 to 400 nm.

Note that since the bank 712 is an insulating film, attention must be paid to electrostatic breakdown of elements during film formation. In this embodiment, carbon particles or metal particles are added to the insulating film that is the material of the bank 712 to reduce the resistivity and suppress the generation of static electricity. At this time, the addition amount of carbon particles or metal particles may be adjusted so that the resistivity is 1 × 10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 10 ¹⁰ Ωm).

A light emitting layer 713 is formed on the pixel electrode 711. Although only one pixel is shown in FIG. 23, in this embodiment, light emitting layers corresponding to each color of R (red), G (green), and B (blue) are separately formed. In this embodiment, a low molecular weight organic light emitting material is formed by a vapor deposition method. Specifically, a laminated structure in which a copper phthalocyanine (CuPc) film having a thickness of 20 nm is provided as a hole injection layer and a tris-8-quinolinolato aluminum complex (Alq ₃ ) film having a thickness of 70 nm is provided thereon as a light emitting layer. It is said.
The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene, or DCM1 to Alq ₃ .

  However, the above example is an example of an organic light emitting material that can be used as a light emitting layer, and it is not absolutely necessary to limit to this. A light emitting layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, in this embodiment, an example in which a low molecular weight organic light emitting material is used as the light emitting layer is shown, but a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. Note that in this specification, an organic light-emitting material that does not have sublimation and has 20 or less molecules or a chain molecule length of 10 μm or less is referred to as a medium molecular organic light-emitting material. As an example of using a polymer organic light emitting material, a 20 nm polythiophene (PEDOT) film is provided by a spin coating method as a hole injection layer, and a paraphenylene vinylene (PPV) film of about 100 nm is provided thereon as a light emitting layer. Alternatively, a laminated structure may be used. If a PPV π-conjugated polymer is used, the emission wavelength can be selected from red to blue. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. Known materials can be used for these organic light emitting materials and inorganic materials.

  Next, a cathode 714 made of a conductive film is provided on the light emitting layer 713. In this embodiment, an alloy film of aluminum and lithium is used as the conductive film. Of course, a known MgAg film (magnesium and silver alloy film) may be used. As the cathode material, a conductive film made of an element belonging to Group 1 or Group 2 of the periodic table or a conductive film added with these elements may be used.

  When the cathode 714 is formed, the light emitting element 715 is completed. Note that the light-emitting element 715 here refers to a diode formed of a pixel electrode (anode) 711, a light-emitting layer 713, and a cathode 714.

  It is effective to provide a passivation film 716 so as to completely cover the light emitting element 715. As the passivation film 716, an insulating film including a carbon film, a silicon nitride film, or a silicon nitride oxide film is used, and the insulating film is used as a single layer or a combination thereof.

At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC (diamond-like carbon) film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the light-emitting layer 713 having low heat resistance. In addition, the DLC film has a high blocking effect against oxygen and can suppress oxidation of the light-emitting layer 713. Therefore, the problem that the light emitting layer 713 is oxidized during the subsequent sealing process can be prevented.

  Further, a sealing material 717 is provided over the passivation film 716 and a cover material 718 is attached thereto. As the sealing material 717, an ultraviolet curable resin may be used, and it is effective to provide a substance having a hygroscopic effect or a substance having an antioxidant effect inside. In this embodiment, the cover material 718 is formed by forming a carbon film (preferably a diamond-like carbon film) on both surfaces of a glass substrate, a quartz substrate, or a plastic substrate (including a plastic film).

  Thus, a light emitting device having a structure as shown in FIG. 23 is completed. Note that it is effective to continuously process the steps from the formation of the bank 712 to the formation of the passivation film 716 using a multi-chamber type (or in-line type) film formation apparatus without releasing to the atmosphere. . Further, it is possible to continuously process the process up to the step of bonding the cover material 718 without releasing to the atmosphere.

  Thus, n-channel TFTs 601 and 602, a switching TFT (n-channel TFT) 603 and a current control TFT (n-channel TFT) 604 are formed on the substrate 700.

  Furthermore, as described with reference to FIGS. 23A and 23B, an n-channel TFT which is resistant to deterioration due to the hot carrier effect can be formed by providing an impurity region overlapping with a gate electrode through an insulating film. Therefore, a highly reliable light emitting device can be realized.

  Further, in this embodiment, only the configuration of the pixel portion and the drive circuit is shown. However, according to the manufacturing process of this embodiment, other logic circuits such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit are provided. Can be formed on the same insulator, and a memory and a microprocessor can also be formed.

  The light-emitting device manufactured as described above has a TFT manufactured using a uniformly annealed semiconductor film because it is irradiated with laser light with a uniform energy distribution. The operating characteristics and reliability can be sufficient. And such a light-emitting device can be used as a display part of various electronic devices.

  Note that this embodiment can be freely combined with Embodiments 1 to 7.

  By applying the present invention, various semiconductor devices (active matrix liquid crystal display device, active matrix light emitting device, active matrix EC display device) can be manufactured. That is, the present invention can be applied to various electronic devices in which these electro-optical devices are incorporated in a display unit.

  Such electronic devices include video cameras, digital cameras, projectors, head-mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples thereof are shown in FIG. 24, FIG. 25 and FIG.

  FIG. 24A shows a personal computer, which includes a main body 3001, an image input portion 3002, a display portion 3003, a keyboard 3004, and the like. The present invention can be applied to the display portion 3003.

  FIG. 24B illustrates a video camera, which includes a main body 3101, a display portion 3102, an audio input portion 3103, operation switches 3104, a battery 3105, an image receiving portion 3106, and the like. The present invention can be applied to the display portion 3102.

  FIG. 24C illustrates a mobile computer, which includes a main body 3201, a camera unit 3202, an image receiving unit 3203, an operation switch 3204, a display unit 3205, and the like. The present invention can be applied to the display portion 3205.

  FIG. 24D illustrates a goggle type display including a main body 3301, a display portion 3302, an arm portion 3303, and the like. The present invention can be applied to the display portion 3302.

FIG. 24E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 3401, a display portion 3402, a speaker portion 3403, a recording medium 3404, an operation switch 3405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet.
The present invention can be applied to the display portion 3402.

  FIG. 24F illustrates a digital camera, which includes a main body 3501, a display portion 3502, an eyepiece portion 3503, an operation switch 3504, an image receiving portion (not shown), and the like. The present invention can be applied to the display portion 3502.

  FIG. 25A shows a front type projector, which includes a projection device 3601, a screen 3602, and the like. The present invention can be applied to a liquid crystal display device 3808 constituting a part of the projection device 3601 and other driving circuits.

  FIG. 25B shows a rear projector, which includes a main body 3701, a projection device 3702, a mirror 3703, a screen 3704, and the like. The present invention can be applied to the liquid crystal display device 3808 constituting a part of the projection device 3702 and other driving circuits.

  Note that FIG. 25C is a diagram illustrating an example of the structure of the projection devices 3601 and 3702 in FIGS. 25A and 25B. The projection devices 3601 and 3702 include a light source optical system 3801, mirrors 3802 and 3804 to 3806, a dichroic mirror 3803, a prism 3807, a liquid crystal display device 3808, a phase difference plate 3809, and a projection optical system 3810. The projection optical system 3810 is composed of an optical system including a projection lens. The present embodiment shows an example of a three-plate type, but is not particularly limited, and may be a single-plate type, for example. In addition, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, or an IR film in the optical path indicated by an arrow in FIG. Good.

  FIG. 25D illustrates an example of the structure of the light source optical system 3801 in FIG. In this embodiment, the light source optical system 3801 includes a reflector 3811, a light source 3812, lens arrays 3813 and 3814, a polarization conversion element 3815, and a condenser lens 3816. Note that the light source optical system illustrated in FIG. 25D is an example and is not particularly limited. For example, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, or an IR film in the light source optical system.

  However, the projector shown in FIG. 25 shows a case where a transmissive electro-optical device is used, and an application example in a reflective electro-optical device and a light-emitting device is not shown.

  FIG. 26A shows a cellular phone, which includes a main body 3901, an audio output portion 3902, an audio input portion 3903, a display portion 3904, operation switches 3905, an antenna 3906, and the like. The present invention can be applied to the display portion 3904.

  FIG. 26B illustrates a portable book (electronic book) which includes a main body 4001, display portions 4002 and 4003, a storage medium 4004, operation switches 4005, an antenna 4006, and the like. The present invention can be applied to the display portions 4002 and 4003.

  FIG. 26C shows a display, which includes a main body 4101, a support base 4102, a display portion 4103, and the like. The present invention can be applied to the display portion 4103. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).

  As described above, the applicable range of the present invention is so wide that the present invention can be applied to electronic devices in various fields. Moreover, the electronic device of a present Example is realizable even if it uses the structure which consists of a combination of Example 1-7 or 8.

The figure which shows the example by which a field curvature is eliminated with a concave lens. The figure which shows the example of the optical system whose optical path length for forming the linear beam of length 300mm in the elongate direction is about 5000 mm. The figure which shows the example of energy distribution of the laser beam formed in an irradiation surface by the optical system shown in FIG. The figure which shows the example of the optical system whose optical path length for forming the linear beam of length 300mm in the elongate direction is about 2400 mm. The figure which shows the example of the energy distribution of the laser beam formed in an irradiation surface by the optical system shown in FIG. The figure which shows the example of the optical system whose optical path length for forming a 300-mm-length linear beam using a toroidal lens is about 2400 mm. The figure which shows the example of energy distribution of the laser beam formed in an irradiation surface by the optical system shown in FIG. The figure which shows the example of the optical system for forming a rectangular beam. The figure which shows the example of the optical system for forming the linear beam of length 300mm in the elongate direction. The figure which shows the example of the energy distribution of the laser beam formed in an irradiation surface by the optical system shown in FIG. The figure which shows the example of the optical system for forming the linear beam of length 1000mm of the elongate direction. FIG. 12 is a diagram illustrating an example of an energy distribution of laser light formed on an irradiation surface when the second surface of the lens 1007 has a curvature in the optical system illustrated in FIG. 11. FIG. 12 is a diagram illustrating an example of energy distribution of laser light formed on an irradiation surface when the second surface of the lens 1007 is not given a curvature in the optical system illustrated in FIG. 11. The figure which shows the example of the optical system for forming the linear beam of length 1000mm of the elongate direction. The figure which shows the example of energy distribution of the laser beam formed in an irradiation surface by the optical system shown in FIG. The figure which shows the example of the optical system for forming the linear beam of length 1000mm of the elongate direction. The figure which shows the example of the energy distribution of the laser beam formed in an irradiation surface by the optical system shown in FIG. Sectional drawing which shows the manufacturing process of TFT of a pixel TFT and a driver circuit. Sectional drawing which shows the manufacturing process of TFT of a pixel TFT and a driver circuit. Sectional drawing which shows the manufacturing process of TFT of a pixel TFT and a driver circuit. FIG. 6 is a top view illustrating a configuration of a pixel TFT. Sectional drawing of an active-matrix liquid crystal display device. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a light emitting device. FIG. 11 illustrates an example of a semiconductor device. FIG. 11 illustrates an example of a semiconductor device. FIG. 11 illustrates an example of a semiconductor device. The figure which shows the example of the conventional optical system. The figure which shows the example in which a field curvature is formed. The figure which shows the example which applies this invention to a large area board | substrate.

Claims (10)

The laser beam emitted from the laser is formed into a linear beam having a long direction and a short direction,
The linear beam is incident on the irradiation surface through a concave lens;
A method of manufacturing a semiconductor device for annealing a semiconductor film by irradiating while moving the linear beam relative to the irradiation surface,
The linear beam incident on the irradiation surface through the concave lens has uniform energy in the long direction and the short direction,
The concave lens has a curvature that forms an image on the irradiation surface in a direction parallel to the longitudinal direction so that a condensing position of the linear beam in the longitudinal direction coincides with the irradiation surface. A method for manufacturing a semiconductor device. The laser beam emitted from the laser is formed into a linear beam having a long direction and a short direction,
The linear beam is incident on the irradiation surface through a concave cylindrical lens;
A method of manufacturing a semiconductor device for annealing a semiconductor film by irradiating while moving the linear beam relative to the irradiation surface,
The linear beam incident on the irradiation surface through the concave cylindrical lens has uniform energy in the long direction and the short direction,
The concave cylindrical lens has a curvature that forms an image on the irradiation surface in a direction parallel to the longitudinal direction so that a condensing position of the linear beam in the longitudinal direction coincides with the irradiation surface. A method for manufacturing a semiconductor device. Depositing a semiconductor film,
Annealing the semiconductor film;
Forming an insulating film on the annealed semiconductor film;
A method of manufacturing a semiconductor device in which a gate electrode is formed on the insulating film,
In the annealing, a laser beam emitted from a laser is formed into a linear beam having a long direction and a short direction, the linear beam is incident on an irradiation surface through a concave lens, and the linear beam is incident on the irradiation surface. Using a method of irradiating while relatively moving
The linear beam incident on the irradiation surface through the concave lens has uniform energy in the long direction and the short direction,
The concave lens has a curvature that forms an image on the irradiation surface in a direction parallel to the longitudinal direction so that a condensing position of the linear beam in the longitudinal direction coincides with the irradiation surface. A method for manufacturing a semiconductor device. Depositing a semiconductor film,
Annealing the semiconductor film;
Forming an insulating film on the annealed semiconductor film;
A method of manufacturing a semiconductor device in which a gate electrode is formed on the insulating film,
In the annealing, a laser beam emitted from a laser is formed into a linear beam having a long direction and a short direction, the linear beam is incident on an irradiation surface through a concave cylindrical lens, and the line is incident on the irradiation surface. Using a method of irradiating while moving the shaped beam relatively,
The linear beam incident on the irradiation surface through the concave cylindrical lens has uniform energy in the long direction and the short direction,
The concave cylindrical lens has a curvature that forms an image on the irradiation surface in a direction parallel to the longitudinal direction so that a condensing position of the linear beam in the longitudinal direction coincides with the irradiation surface. A method for manufacturing a semiconductor device. In any one of claims 1 to 4, the method for manufacturing a semiconductor device characterized by using the doublet cylindrical lens reducing the width of the short direction. In any one of claims 1 to 5, the annealing of the semiconductor film, the method for manufacturing a semiconductor device characterized by crystallizing the semiconductor film. In any one of claims 1 to 5, the annealing of the semiconductor film, the method for manufacturing a semiconductor device, characterized in that to improve the crystallinity of the semiconductor film. According to claim 1 or claim 3, the method for manufacturing a semiconductor device, wherein the opposite surface to the surface having the curvature of the concave lens is a plane. According to claim 2 or claim 4, the method for manufacturing a semiconductor device, wherein the opposite surface to the surface having the curvature of the concave cylindrical lens is a plane. 10. The method for manufacturing a semiconductor device according to claim 1, wherein the linear beam applied to the semiconductor film has a length of 300 mm or more in the longitudinal direction.

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