JP4504577B2 - Manufacturing method of chip resistor - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a chip resistor formed by dividing an insulating substrate on which a resistor film is arranged, and a method for manufacturing the chip resistor.
[0002]
[Prior art]
In recent years, with the miniaturization and popularization of portable terminals and the like, the supply of chip resistors having extremely small dimensions has been requested. When chip resistors with these extremely small dimensions are used and mounted on circuit boards in small electronic devices, component manufacturers and device manufacturers cooperate to improve mounting efficiency and ensure solder joint reliability. It is desirable to do.
[0003]
On the other hand, a manufacturing method of the chip resistor in a component manufacturer or the like is formed by the following procedure, for example. That is, first, prepared insulating substrate duplex division slit DOO filled, this was calcined at go by for example about 850 ° C. The printing of metal glaze (Ag or Ag · Pd glaze), thickness of 8~12μm backside electrode that forms form the. The back electrode straddles the primary direction divides slit doo, further secondary direction dividing slit or formed apart from preparative, or formed by screen printing across the dividing slit bets primary direction and secondary direction.
[0004]
Next, a metal glaze (Ag / Pd-based glaze) is printed on the insulating substrate, for example, baked at 850 ° C. to form a surface electrode film lower layer having a film layer of 8 to 12 μm. That is, the front electrode film underlayer straddle the primary direction divides slit DOO, formed by spaced further apart from the secondary direction dividing slit and. Subsequently, a RuO2-based glaze was screen-printed between a pair of lower layers of the surface electrode film, and this was fired at 850 ° C. to form a resistor film, and the coat formed by forming a double layer of lead borosilicate glass on the resistor film A film is formed.
[0005]
The coated film covering the resistor film, the undercoat layer and baked at formed to 600 ° C. across secondary direction dividing slit preparative covers the undercoat film, formed spaced apart from the secondary direction dividing slit DOO And an overcoat film fired at 600 ° C. Note that the trimming grooves for adjusting the resistance value by the laser method are formed on the undercoat film before the overcoat film is formed. Then, across the dividing slit bets primary direction and the secondary direction of Ag or Ag · Pd glaze, the screen printed on the front electrode film lower layer on which was calcined at 600 ° C., about 8~12μm The surface electrode film upper layer having a film thickness is formed, and a so-called surface electrode is formed in a two-layer structure.
[0006]
Following the split substrate of the insulating substrate in the form of a strip, it is printed and coated with Ag or Ag / Pd-based glaze so as to overlap the upper electrode film upper layer and part of the back electrode film, and fired at about 600 ° C. to form the end face electrode film After the firing, the chip is divided into individual chips, and an Sn plating film or an Sn / Pb plating film following the Ni plating film is formed as an electrode plating film.
[0007]
FIG. 10 shows a manufacturing process of such a conventional chip resistor, which will be described below. This chip resistor is formed in a rectangular chip by dividing an insulating substrate into divided slits formed in a primary direction and a secondary direction. FIG. 10A to FIG. 10J show the manufacturing process of the chip resistor as seen in the chip unit. First, as shown to Fig.10 (a), the area | region to the both right and left ends and front-and-rear both ends of this insulated substrate 1 so that it may be located in the right and left both ends of the back side of the insulated substrate 1 divided into the rectangle shape, or figure As shown in FIG. 10B, the back electrode film 2 is formed in a region separated from the both front and rear ends by a predetermined distance. On the other hand, the lower layer of the surface electrode film as shown in FIG. 10 (c) is located in a region from the front and rear ends of the insulating substrate 1 to a position separated by a predetermined distance so as to be positioned at both left and right end portions on the front side of the insulating substrate 1. 3 is formed. Then, as shown in FIG. 10 (d), the surface electrode film lower layers 3 at the left and right end portions are connected to each other by a resistor film 4 so as to overlap a part thereof, and the resistor film 4 is further insulated. The front and rear ends of the substrate 1 are covered with an undercoat film 5 as shown in FIG. Further, in order to adjust the resistance value of the resistor film 4 from above the undercoat film 5, a trimming groove 6 is formed as shown in FIG. As shown in FIG. 10G, the undercoat film 5 and the trimming groove 6 are covered with an overcoat film 7.
[0008]
Next, as shown in FIG. 10 (h), the surface electrode film lower layer 3 is covered with the surface electrode film upper layer 8 to the left and right ends and the front and rear ends of the insulating substrate 1, and the left and right end surfaces of the insulating substrate 1 are covered. Or an end face electrode film 9 as shown in FIG. 10 (i) is formed so as to cover the left and right end faces and to overlap with the back electrode film 2 and a part of the front electrode film upper layer 8. Further, as shown in FIG. 10 (j), the back electrode film 2, the front electrode film upper layer 8 and the end face electrode film 9 are covered with an electrode plating film 10 to form a chip-type resistor. FIG. 11 is a cross-sectional view taken along the line AA of FIG. 10J of the chip resistor manufactured through such a process, and FIG. 12 is a cross-sectional view taken along the line CC of FIG. FIG. 13 is a cross-sectional view of a portion corresponding to the CC line of FIG. 11 in the embodiment of FIG. 10B in the back electrode.
[0009]
[Problems to be solved by the invention]
However, the conventional chip resistor manufacturing method described, employs a double-sided division slit preparative containing insulating substrate, front and back electrode film of metal glaze, as shown in FIGS. 10 (a) and 10 (h) since but split by a mechanical stress in a state that has entered the front and back electrode film material in the divided slit DOO, not obtained finishing accuracy of divided surface, also the insulating substrate, the front and back electrode film burrs, chipping is generated, and finish accuracy There is a problem that it is not suitable for the manufacture of a chip resistor having a minute dimension that is strictly required.
[0010]
Further, in the formation of the back electrode film as in FIG. 10 (b), there is also an embodiment which is spaced apart from the secondary direction of division slit bets, in the Chip Resistors critical dimension, the printing Misalignment is not negligible, variation occurs in the back electrode film area to be secured, the self-alignment effect is diminished when soldering to the circuit board mounting land, and the position misalignment with respect to the circuit board land and mounting land There have been problems such as solder bonding in the generated state, reliability of the solder bonding strength is reduced, and a sufficient distance between adjacent components in mounting the circuit board cannot be secured.
[0011]
Furthermore, the formation of a glaze-based end face electrode film having a predetermined film thickness that overlaps a part of the front and back electrode films results in uneven steps on the front and back electrodes, particularly in chip resistors having minute dimensions. However, there is a problem that a tombstone phenomenon (chip standing) occurs due to the solder wetting stress when the solder melts with the circuit board land.
[0012]
The present invention solves the above-described problems, and the object of the present invention is that it can be mounted on a circuit board on either the front side or the back side, that is, it can be supplied by any method by taping or bulk. In addition, it is possible to suppress the generation of burrs and chips on the insulating substrate, front and back electrode films and coat film when dividing in the primary and secondary directions, and the finished accuracy of dimensions (length direction and width direction) is stable. An object of the present invention is to provide a chip resistor that can be manufactured and a method of manufacturing the same.
[0013]
Another object of the present invention is that the front and back electrode film ranges can be ensured uniformly, the self-alignment effect can be exhibited, the flatness on the front and back electrode surfaces is ensured, and the occurrence of tombstone phenomenon can be suppressed, and the chip-type resistor Chip resistors that can improve the efficiency of production by smoothing the feeding chute in each manufacturing process and can easily remove the chip resistors from the cavities in the taping supply system using the mounting machine nozzle And providing a manufacturing method thereof.
[0014]
[Means for solving the problems]
In order to achieve the above object, a chip resistor manufacturing method according to the invention of claim 1 is a rectangular chip shape using a slit in which primary and secondary slits are engraved on the front and back surfaces of an insulating substrate. In the method of manufacturing a resistor, a back and front electrode film lower layer forming step of forming a back electrode film and a front electrode film on both sides in the longitudinal direction of the back surface and the front surface of the insulating substrate, and a connection between the lower surface electrode film lower layer Forming a resistor film, forming an undercoat film so as to cover the resistor film, and forming a trimming groove on the undercoat film. An overcoat film forming step for forming an overcoat film so as to cover the undercoat film and the trimming groove; and a surface electrode film upper layer type for forming a surface electrode film upper layer so as to cover the surface electrode film lower layer A step of dividing the insulating substrate into strips along the primary direction dividing slit; covering both left and right end surfaces of the insulating substrate; and part of the back electrode film and the lower layer of the front electrode film. An end face electrode film forming step for forming end face electrode films so as to overlap, a chip-like division step for dividing the insulating substrate into individual chips along a secondary direction division slit, the back electrode film, and the front electrode A chip-type resistor manufacturing method including an electrode plating film forming step of forming an electroplating film so as to cover the film upper layer and the end face electrode film, wherein the surface electrode film lower layer forming step before the trimming groove engraving step Is formed in a region up to a position separated by a predetermined distance not only in the secondary direction split slit but also in the primary direction split slit, and in each step of the back electrode film formation and the front electrode film upper layer formation ,once Before the insulating substrate dividing step, the dividing step of dividing the back electrode film and the front electrode film upper layer formed across the dividing slit in the primary direction and the secondary direction along the dividing slit in the primary direction is performed. characterized in that way the.
[0017]
According to a second aspect of the present invention, there is provided a chip resistor manufacturing method in which the back electrode film and the lower layer of the front electrode film are conductive metal glaze films, and the upper layer of the front electrode film is a conductive resin film. The undercoat film is a glass film, the overcoat film is a resin film, and each of the back electrode film, the surface electrode film lower layer, the surface electrode film upper layer, the undercoat film and the overcoat film is formed. following either, and performs cutting of only the back electrode film to trace the division slit bets primary direction secondary direction by the laser method.
[0018]
According to a third aspect of the present invention, there is provided a chip resistor manufacturing method, wherein the back electrode film, the front electrode film lower layer, and the front electrode film upper layer are metal glaze-based films, and the undercoat film and overcoat film are made of glass. a membrane system, following the step of forming the overcoat layer, the back electrode layer so as to trace the division slit bets primary direction secondary direction by the laser method, the front electrode film lower layer, the front electrode film layer, the undercoat layer And the overcoat film is divided.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described in detail. First, a method for manufacturing a resistor chip according to the present invention will be conceptually described. First, containing more than 96% of alumina, and was prepared insulating substrate containing the division slit bets primary direction and the secondary direction on the front and back surfaces, the back surface of this, the printing with Ag or Ag · Pd-based glaze Then, this is baked at about 850 ° C. to form a back electrode having a thickness of 8 to 12 μm. Here, across the dividing slit bets primary direction and the secondary direction, performs screen printing. Next, printing is performed on the surface of the insulating substrate with Ag / Pd-based glaze, and baking is performed at about 850 ° C. to form a surface electrode film lower layer. At this time, it performs screen printing apart from the dividing slit preparative primary direction and secondary direction.
[0020]
Next, both ends of the resistor film are connected to the lower layer of the pair of surface electrode films by RuO2 glaze by screen printing, and this is baked at about 850 ° C. The lead borosilicate glass is bisected on the resistor film. It was screen-printed across the next direction of division slit bets and calcined at about 600 ° C. it as undercoat films. Subsequently, trimming for adjusting the resistance value is performed from above the undercoat film by a laser method, and then the epoxy resin paint is separated from the dividing slit in the secondary direction and screen printed so as to cover the undercoat film. Then, it is cured at about 200 ° C. to form an overcoat film. Further, as the outer overcoat film, which straddles a part or all of the lead borosilicate glass of the secondary oriented split slit bets, by screen printing so as to cover the undercoat layer and baked at about 600 ° C. It is good.
[0021]
Then, so as to overlap the front electrode film lower layer, a phenol-based electrically conductive resin coating material was screen printed across the dividing slit bets primary direction and the secondary direction to form a front electrode film upper layer is cured at about 200 ° C. . In the case of using the borosilicate glass as the overcoat film, the front electrode film upper layer using Ag-based or Ag · Pd glaze, front electrode across the dividing slit bets primary direction and the secondary direction Screen printing is performed from above the film lower layer, and this is baked at 600 ° C. to form a surface electrode film upper layer having a film thickness of 8 to 12 μm.
[0022]
Such front electrode film after the upper layer of the formation, by laser method to divide the back electrode film to trace the division slit bets primary direction and the secondary direction of the insulating substrate, followed by the a laser method primary direction and the secondary so as to trace the next direction of division slit bets, the undercoat layer and the overcoat film, and further to divide the front electrode film. Then, to ensure a portion overlapping portion of the front electrode film layer and the back electrode film due to edge electrode formation, after applying the masking resist, to break the strip along the insulating substrate to the division slit preparative primary direction . Then, by sputtering thereon, to form a Cr thin film and Ni film, the masking resist is removed, and break the insulating substrate in a secondary direction of division slit bets, divided into individual chip-shaped at the end A chip resistor is obtained by applying a Ni plating film and a Sn-based plating or Sn / Pb plating film as an electrode plating film.
[0023]
4, 5 and 6 show the dividing grooves of the back electrode film, 11 dividing grooves along the division slit bets primary direction of the back electrode film, 12 is divided slit bets secondary direction of the back electrode film dividing grooves along, 13 is divided slit preparative secondary direction on the insulating substrate. Further, FIGS. 7, 8 and 9 show an example of a partitioned the table electrode film, the undercoat film, overcoat film, laser cutting grooves along the division slit preparative primary direction 14, 15 secondary direction a laser cutting grooves along the division slit bets. In the laser method for performing the division, either a laser trimmer or a laser scriber may be used. After the back electrode film is formed, the surface electrode film lower layer is formed, the resistor film is formed, the undercoat film is formed, the trimming groove is formed, the overcoat film is formed, and the surface electrode film upper layer is formed. Can be done either. Moreover, the division | segmentation of the film | membrane by a laser construction method can be suitably selected by the material of a surface electrode upper layer film | membrane and an overcoat as shown to this Embodiment.
[0024]
Next, the chip resistor of the present invention viewed from the chip unit and the manufacturing process thereof will be described with reference to FIGS. First, as shown in FIG. 1 (a), the back electrode film is formed in the regions up to the left and right ends and the front and rear ends of the insulating substrate 1 so as to be positioned at the left and right ends on the back side of the insulating substrate 1 partitioned in a rectangular shape. 2 is formed. On the other hand, a table as shown in FIG. 1 (b) is formed in the region from the left and right ends and the front and rear ends of the insulating substrate 1 to a position separated by a predetermined distance so as to be positioned at the left and right ends on the front side of the insulating substrate 1. An electrode film lower layer 3 is formed. And as shown in FIG.1 (c), the surface electrode film lower layer 3 of the said right-and-left both ends is connected by the resistor film 4 so that these may be overlapped, and also the resistor film 4 is made into the said The both ends of the insulating substrate 1 are covered with an undercoat film 5 as shown in FIG. Further, in order to adjust the resistance value of the resistor film 4 from above the undercoat film 5, a trimming groove 6 as shown in FIG. 1 (e) is formed, as shown in FIG. 1 (f). The undercoat film 5 and the trimming groove 6 are formed by the overcoat film 7a or 7b up to both front and rear ends of the insulating substrate 1 or until a part reaches the front and rear ends of the insulating substrate 1 as shown in FIG. cover.
[0025]
Further, as shown in FIG. 1 (h) or (i), the surface electrode film lower layer 3 is covered with a surface electrode film upper layer 8 to both the left and right ends and the front and rear ends of the insulating substrate 1. As shown in FIG. 1 (j) or FIG. 1 (k), the sputtering method is applied so as to cover the left and right end surfaces and to overlap with part of the back electrode film 2 and the front electrode film upper layer 8. The end face electrode film 9 is formed, and finally, the back electrode film 2, the front electrode film upper layer 8 and the end face electrode film 9 are covered with the electrode plating film 10 as shown in FIG. Thus, a chip resistor is formed. 2 and 3 are a front sectional view and a side sectional view taken along the line DD of FIG. 2, respectively, of the chip resistor manufactured through such a process. FIG. 2 is a plan view of FIG. 1 (l) or (m). FIG. 3 is a cross-sectional view taken along line B-B, and FIG. 3 is a cross-sectional view taken along line D-D in FIG.
[0026]
Therefore, in the chip resistor manufactured in this way, the end face electrode film 9 as a sputtered film superimposed on a part of the back electrode film 2 and the front electrode film upper layer 8 is not formed on each of these electrode films. In the case of a chip-type resistor that suppresses the occurrence of a uniform step and has a particularly small dimension, when the solder melts with the land on the circuit board 1, the tombstone phenomenon (chip standing) caused by the solder wetting stress occurs. Occurrence can be suppressed.
[0027]
Also, the front electrode film and two layers of the front electrode film lower layer 3 and the front electrode film layer 8, formed by separating the front electrode film lower layer 3 from the dividing slit preparative primary direction and the secondary direction, the front electrode film layer 8 by forming to divide slit preparative primary direction and the secondary direction, the reliability of the electrical connection is ensured. Because the back electrode film 2 is also formed to divide slit preparative primary direction and the secondary direction, suitable regardless mounted on front and rear surfaces of the chip-type resistor, a wide range of front and back electrode film and the flatness of the front and back electrode surface Can be secured. Furthermore, it contributes to the self-alignment effect, and the positional deviation during circuit board mounting can be suppressed.
[0028]
Further, by employing a laser process method according to the back electrode film 2 or Table electrode film 3, 8 and the coat film 7a, a division of 7b, insulation due to mechanical stress along the division slit bets primary direction and the secondary direction time division of a substrate, the back electrode film 2 or Table electrode film 3, 8 and coat film 7a, burrs and chips can be prevented from occurring 7b, by sublimating intruded film material in the divided slit DOO, mechanical stress due to effective use of engraved has been insulated split slit bets substrate during the divided insulating substrate 1, it can be secured to improve the finishing and dimensional accuracy of better split surface of the insulating substrate 1.
[0029]
Incidentally, the table electrode film layer of conductive resin paint straddle a part of the secondary oriented split slit bets, and in the case of forming spaced apart from a portion, the front electrode film 3, 8 and coat film 7a , 7b is not required to be divided by the laser, and the process can be simplified.
[0030]
In addition, the finish of the insulating substrate as described above and the improvement of the dimensional accuracy facilitate the conveyance with the supply chute in each manufacturing process of the chip resistor, thereby improving the manufacturing efficiency and the taping process. It becomes easy to take out the chip resistor from the cavity in the supply system by the mounting machine nozzle.
[0031]
【The invention's effect】
As described above, according to the present invention, either the front side or the back side of the chip-type resistor can be mounted on the circuit board, and can be supplied by any of taping and bulk methods. In addition, burrs and chipping of the insulating substrate, front and back electrode films, and coat film during a break in the secondary direction are suppressed, and the finish accuracy in the length and width directions of the chip resistor is stabilized, enabling downsizing. The effect of becoming is obtained.
[0032]
In addition, the uniformity of the thicknesses of the front and back electrode film regions can be ensured, the self-alignment effect can be exhibited, and the flatness can be ensured, thereby suppressing the occurrence of the tombstone phenomenon. Furthermore, the flow at the supply chute of the chip resistor in each manufacturing process proceeds smoothly, and the suction of the chip resistor from the cavity by the mounting nozzle of the taping supply method is facilitated. can get.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram showing a manufacturing process of a chip resistor according to an embodiment of the present invention.
2 is a longitudinal sectional view of the chip resistor shown in FIG. 1. FIG.
3 is a cross-sectional view taken along the line DD in FIG.
FIG. 4 is a plan view of a main part showing a dividing structure of a back electrode film on an insulating substrate in the present invention.
5 is a longitudinal sectional view taken along line EE in FIG. 4. FIG.
6 is a longitudinal sectional view taken along line FF in FIG. 4;
FIG. 7 is a plan view of a main part showing a divided structure of a surface electrode film and a coat film on an insulating substrate in the present invention.
8 is a longitudinal sectional view taken along line HH in FIG. 7;
9 is a longitudinal sectional view taken along line JJ in FIG.
FIG. 10 is an explanatory view showing a manufacturing process of a conventional chip resistor.
FIG. 11 is a longitudinal sectional view showing a conventional chip resistor.
12 is a longitudinal sectional view taken along line CC in FIG. 11. FIG.
FIG. 13 is a longitudinal sectional view taken along the line CC in a conventional chip resistor according to another example.
[Explanation of symbols]
1 insulating substrate 2 of the back electrode film 3 Table electrode film lower layer 4 resistor film 5 undercoat film 6 trimming groove 7 overcoat film 8 Table electrode film layer 9 end face electrode film 10 electrode plating film 13 secondary direction dividing slit DOO

Claims (3)

In a method of manufacturing a rectangular chip resistor using a slit in which primary and secondary split slits are engraved on the front and back surfaces of an insulating substrate,
A back and front electrode film lower layer forming step for forming a back electrode film and a front electrode film on both sides in the longitudinal direction of the back surface and the front surface of the insulating substrate, and a resistor for forming a resistor film by connecting between the front electrode film lower layer A body film forming step, an undercoat film forming step for forming an undercoat film so as to cover the resistor film, a trimming groove engraving step for engraving a trimming groove on the undercoat film, and the undercoat film And an overcoat film forming step of forming an overcoat film so as to cover the trimming groove, a surface electrode film upper layer forming step of forming a surface electrode film upper layer so as to cover the surface electrode film lower layer, and a primary of the insulating substrate An insulating substrate dividing step for breaking in a strip shape along the direction dividing slit, and an end face electrode so as to cover both left and right end faces of the insulating substrate and to overlap a part of the back electrode film and the lower layer of the front electrode film An end face electrode film forming step, a tip-like splitting step for splitting the insulating substrate into individual chips along secondary-direction split slits, the back electrode film, the top electrode film upper layer, and the end face electrode film An electrode plating film forming step of forming an electroplating film so as to cover the chip resistor,
The surface electrode film lower layer forming step before the trimming groove engraving step is formed in a region up to a position separated by a predetermined distance not only in the secondary direction split slit but also in the primary direction split slit, and In each step of the back electrode film formation and the front electrode film upper layer formation, both the primary direction and the secondary direction are formed across the split slit, and the back electrode film and the upper layer of the front electrode film formed across the split slit are formed in the primary direction. A method of manufacturing a chip resistor, characterized in that a dividing step of dividing along the insulating substrate is performed before the insulating substrate dividing step. The back electrode film and the lower layer of the front electrode film are conductive metal glaze films, the upper layer of the front electrode film is a conductive resin film, the undercoat film is a glass film, and the overcoat film is The resin-based film is used, and after the back electrode film, the surface electrode film lower layer, the surface electrode film upper layer, the undercoat film, and the overcoat film are formed, only the back electrode film is divided by a laser method. The method of manufacturing a chip resistor according to claim 1 . The back electrode film, the lower layer of the front electrode film and the upper layer of the front electrode film are metal glaze-based films, the undercoat film and the overcoat film are glass-based films, and following the formation process of the overcoat film, a laser method 2. The method of manufacturing a chip resistor according to claim 1 , wherein the back electrode film, the surface electrode film lower layer, the surface electrode film upper layer, the undercoat film, and the overcoat film are divided by the step.

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