JP4500043B2 - Manufacturing method of crystal plate for display device - Google Patents

Description

The present invention relates to a method for manufacturing a quartz plate used in a display device such as a liquid crystal projector .

    Artificially produced quartz crystals mainly use a portion grown in the Z-axis direction. The main applications are electrical applications such as crystal oscillators and surface acoustic wave devices. The growth direction of the quartz crystal also grows in the X-axis direction following the Z-axis direction. However, the crystal grown in the X-axis direction contains a large amount of impurities, particularly aluminum, and has a high aluminum element concentration. If the metal atom concentration in the quartz crystal is high, the electrical characteristics may be affected, and a portion grown in the Z-axis direction having a low element concentration is generally used.

  For example, in a conventional artificial crystal, in order to prevent dislocation from occurring along the subboundary of the Z growth region from the end surface of the seed crystal on the −X plane side, the −X plane is chamfered to grow the artificial crystal ( (See Patent Document 1).

In addition, the light transmission characteristics of sapphire are as wide as 160 nm to 6,000 nm in terms of the wavelength of light, but the transmittance is about 88% even when taking into account the decrease in transmittance due to interface reflection in normal visible light. It is low compared with the transmittance of 98% or more of quartz glass or the like. Therefore, about 10% of light is attenuated only by passing through one sapphire plate (see Patent Document 2).
Japanese Examined Patent Publication No. 7-76152 (Page 2, Fig. 1-6) Japanese Patent Laid-Open No. 2002-31202 (page 6-7, FIG. 14)

  When a quartz crystal is processed into a Lambert, the portion grown in the X-axis direction is cut off, and then processed so that the seed crystal is removed. Since crystal growth is extremely slow in the Y-axis direction, cutting in the Y-axis direction is not necessary. The crystal crystal grown in the X-axis direction, which is cut off, is usually melted together with the laska and becomes a raw material for forming a new crystal. However, since crystal growth using the hydrothermal method spends several months even if it is small, it is wasteful and uneconomical to re-dissolve a crystal crystal once manufactured, and crystals with a high concentration of a specific element are required. There is a concern that the concentration of a specific element in the autoclave increases by re-dissolving several times.

  Also, when the crystal plate was cut out, the plate size was cut out to a shape and size close to the final product, but the liquid crystal size of the liquid crystal projector became smaller, for example 0.7 to 0.5 inch, etc. A large number of plates were processed, and it took time to handle the quartz plate, for example, mounting and collecting on a polishing machine, resulting in a decrease in work efficiency.

  The quartz plate of the present invention is cut perpendicularly to the X axis so as to include a surface including the Z axis from a quartz crystal grown in the X axis direction.

  In the display device of the present invention, a liquid crystal panel for displaying an image, and at least a part of the liquid crystal panel are constituted by the crystal plate.

  In the display device of the present invention, a liquid crystal panel for displaying an image, the crystal plate is disposed at least on the incident light side with respect to the liquid crystal panel, and at least a part of the liquid crystal panel and the crystal plate is covered with an outer wall. At this time, at least a part of the liquid crystal panel may be formed of the crystal plate.

  The display device according to the present invention includes a polarizing plate that directly or indirectly polarizes light on any one of a liquid crystal panel that displays an image, the crystal plate, and a surface of the crystal plate through which light is transmitted. And a single crystal with a polarizing plate attached, and the single crystal with a polarizing plate is disposed on at least one of the incident light side and the transmitted light side of the liquid crystal panel. Here, at least a part of the liquid crystal panel may be formed of the crystal plate.

  The display device of the present invention may have a support base that holds at least a part of the single crystal with polarizing plate.

  The present invention can use a material that is substantially equivalent to the visible light transmittance of sapphire and has a higher thermal conductivity than sapphire. The thermal conductivity of sapphire at 20 degrees Celsius is 0.066 cal / cm / sec / ° C., and the thermal conductivity of quartz at 20 degrees Celsius is 0.029 cal / cm / sec / ° C. In terms of thermal conductivity, quartz is more than twice that of sapphire. The heat capacity of quartz is 0.166 cal / g- ° C. at 0 degrees Celsius, which is close to 0.186 cal / g- ° C. of sapphire at 25 degrees Celsius.

  It is not generally used for parts for electrical applications because the necessary electrical characteristics cannot be obtained, for example, the concentration of a specific element is higher than other parts because elemental impurities are easily mixed. By using the crystal crystal grown in the axial direction as a raw material for optical parts, the crystal material can be effectively utilized.

  In addition, quartz has a lower raw material market price than sapphire and can be processed more easily than sapphire. A method that maximizes the heat dissipation effect of crystal, that is, processing that maximizes the thermal conductivity, contributes to the realization of a cheaper product.

  By using these quartz plates in a display device, a display device having optical performance equivalent to that of sapphire and excellent in thermal conductivity can be manufactured at low cost.

  Embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 shows a portion grown in the X-axis direction in a quartz crystal. 1A is a side view of a seed crystal of a crystal crystal and a portion grown in the X-axis direction from a direction perpendicular to the Z-axis, and FIG. 1B is a side view of a plane horizontal to the Z-axis. For the growth of the artificial quartz crystal 100, a seed crystal 110 extending in the Y-axis is used. Since the crystal growth in the Y-axis direction is extremely slow, the crystal growth in the Y-axis direction is negligibly small as compared with the crystal growth with respect to the Z-axis and the X-axis. Here, 120 is a reference plane (X plane). Usually, the crystal of the portion 140 grown in the X-plane direction contains an elemental impurity, and this impurity changes the electrical characteristics of the quartz crystal, and is not suitable for electrical applications. Therefore, when manufacturing a quartz Lambert used for electrical applications, it is often used for the purpose of cutting off the portion grown in the X-axis direction and recrystallizing it with Laska. However, these impurities often electrically change the characteristics, but optically, when the crystal crystal itself does not contain coloring elements, or even if they are contained, the transmitted light is colored or transmitted. If the content is not high enough to change the amount of light, the performance is often sufficient for optical purposes.

  Similarly, since the crystal has the maximum growth rate in the Z-axis direction shown in FIG. 1B, the crystal grows in a shape that thickens up and down in FIG. 1B. That is, the portion used as the crystal of the artificial crystal 100 uses a crystal grown in the Z-axis direction. Further, in order to maximize the thermal conductivity, it is necessary to cut out a plane parallel to the Z axis. Therefore, by cutting a rectangular quartz crystal plate perpendicular to the seed crystal 110 plate, the material efficiency and the thermal conductivity can be maximized.

  Next, a specific method for processing quartz will be described. FIG. 2 is a flowchart showing a process of cutting out the crystal plate. First, an artificially grown quartz crystal 100 is prepared (step 101). Here, the hydrothermal synthesis method is used because it is widely used. The growing method is not limited to the hydrothermal synthesis method, and any method may be used.

A plane (X-axis direction end face) perpendicular to the seed crystal 110 of the quartz crystal 100 is searched (step 102). Usually, this surface has a substantially flat surface even with an unprocessed quartz crystal and can be easily determined.

  Next, this surface is cut into a flat surface (step 103). FIG. 6 is a perspective view for creating a reference plane with the X plane as a reference plane. A surface grinder is generally used for cutting. The diamond grindstone portion 310 of the grinding wheel 300 uses a metal bond type or a resin bond type. The artificial crystal 100 fixes the bonding surface 130 to the fixing base 310 by bonding or the like. Here, the surface ground by the grinding wheel 300 is the reference surface 120.

  Next, the crystal orientation of the cut surface is measured (step 104). FIG. 4 is a schematic diagram showing a method for measuring the crystal orientation of the reference plane using an X-ray crystal orientation measuring device. An X-ray crystal orientation measuring device 500 is generally used for measuring the crystal orientation of the reference plane 120. As the measurement conditions, when copper is used for the cathode, 38.91 is used as the offset angle. As a result of the measurement, if an accurate surface is not obtained, further cutting is performed in a direction to correct the angle offset (step 105).

  It is determined whether or not to cut out the X-axis direction growth portion 510 (step 106). When it is determined that the X-axis direction growth portion 510 is to be cut out, the X-axis direction growth portion 510 is cut out at the cut surface 520 (step 107). The state is shown in FIG. On the other hand, when it is determined that the X-axis direction growth portion is not cut out, the seed crystal is cut and removed (step 108). Then, the crystal orientation of the cut surface is measured (step 109). It is confirmed that the crystal orientation of the cut surface is, for example, ± 10 degrees with respect to the X plane.

  An adhesive is applied to the cut surface and pasted (step 110). The type of the adhesive is preferably an instant adhesive or the like that can obtain an adhesive effect at room temperature. Since quartz has a Curie temperature of 573.3 degrees Celsius and the crystal structure changes to α type and β type at the boundary, it is preferable to use a melting type adhesive at a lower temperature.

Next, the seed crystal 110 is removed by cutting both sides of the seed crystal plate parallel to the seed crystal plate (step 111). FIG. 6 is a schematic diagram showing a cut portion of the artificial quartz crystal 100. Since the seed crystal contains many linear defects typified by etch channels, it is unsuitable as an optical material and can be reused as the seed crystal 110. There are advantages in terms of cost. The portion of the crystal crystal 100 from which the seed crystal 110 has been removed is further cut, that is, the portion whose size is less than the desired size of the crystal plate is cut.

FIG. 7 is a schematic diagram showing a method for measuring the crystal orientation of the Z plane. If the crystal orientation of the Z plane at an angle of ± 0.5 degrees from the Z plane, cut out of the quartz plate against the reference surface. A multi-wire saw is generally used for cutting. In this embodiment, a wire diameter of 0.25 mm is used, and abrasive grains generally having a GC number from 80 to GC 320 are used as cutting materials. In this example, GC number 160 is used. As for the cutting process, there is also a method in which the Lambert 800 is ground in advance and then cut. If the edge is damaged by chipping at the time of cutting, it can be avoided by performing the outer periphery molding after cutting.

  Since the crystal crystal is a trigonal crystal, the crystal does not become a rectangular parallelepiped. In addition, since the inclined surface is formed, the quartz plates cut in the X plane direction are cut out in different sizes, and are classified according to the size in advance in consideration of the polishing process as the next step (steps). 112).

Next, polishing of a crystal crystal cut into a plate shape will be described. As a method for polishing a quartz plate, there are a double-sided simultaneous polishing method in which both surfaces are processed simultaneously and a single-sided double polishing method in which each surface is polished once. The double-sided simultaneous polishing method is a polishing method with high polishing accuracy because the upper surface and the lower surface are polished at a time. On the other hand, the single-sided and double-polishing has a feature that the polishing accuracy tends to be lowered if the bonding accuracy is poor because the workpiece is attached to a polishing disk or the like with an adhesive. The double-side polishing method is used by changing the abrasive and processing conditions. Similarly, as for the single-sided double-polishing method, for example, based on the polishing method described in Japanese Patent No. 3329593, the abrasive and processing conditions are changed. In this embodiment, a double-sided simultaneous polishing method is used for the purpose of placing importance on the flatness of the surface.
Next, an actual polishing process will be described with reference to FIGS. FIG. 9 is a schematic diagram showing a method of forming the outer periphery of a quartz plate, FIG. 10 is a beveling device, and FIG. 11 is a schematic diagram of lapping using a rough polishing double-side polishing machine. FIG. 12 is a schematic diagram for lapping using a double-side polishing machine for mirror polishing, FIG. 13 is a schematic diagram showing cutting of a crystal plate to a specified size, and FIG. 14 is a flowchart of a polishing process.

  First, the outer periphery of the cut quartz plate is formed. In general, the outer periphery molding is often performed using a surface grinder, a rotary grinder, or the like. In this embodiment, the surface grinder 1010 is used. The cut crystal plates 1000 are arranged in the direction before cutting and fixed on the surface grinding machine 1010 (step 201). The outer periphery of the quartz plate 1000 fixed to the surface grinding machine 1010 is ground by the grinding wheel 300 (step 202). The grinding order starts from a portion other than the Z plane, and finally the Z plane is ground. The Z plane is ground last because the Z plane is a reference plane whose crystal orientation has been measured. Therefore, the angle accuracy of the other planes will be affected unless machining is performed after the other planes have been processed based on the Z plane. Because.

  Next, the quartz plate 1000 that has been subjected to outer periphery molding is roughly polished (step 203). As shown in FIG. 11, the quartz plate 1000 is placed in a carrier 1130 for rough polishing, and rough polishing is performed by a double-side polishing machine 1010. The polishing surface plates 1110 and 1120 for a double-side polishing machine used for rough polishing are made of cast iron and a grooving surface plate is used. As the abrasive used for rough polishing, GC80 to GC2000 are generally used. In this example, GC320 was used for the first rough polishing and GC1600 was used for the second rough polishing. The abrasive flows from the abrasive toi 1113 provided on the upper surface plate 1110 through the abrasive tube 1115 to the lower surface plate 1120. As the material of the carrier 1130, a blue steel material is generally used. However, in order to suppress chipping of the crystal edge, a glass fiber carrier is used in this embodiment. Polishing is performed by rotating the upper surface plate 1110 and the lower surface plate 1120 so that the rotation direction is different.

  The quartz plate 1000 after the rough polishing is cleaned (step 204). The cleaning solvent is generally city water (tap water).

  Next, the quartz plate 1000 is chamfered (step 205). As shown in FIG. 10, the chamfering wheel 1210 is generally embedded with diamond particles. In this example, a metal bond type in which a diamond having an average particle diameter of 3 microns was embedded was used. The angle of the bevel is usually 45 degrees and 35 degrees using the angle jig 1220 in many cases. In this example, chamfering was performed at 45 degrees. As for the number of chamfering processes, a total of 16 surfaces were processed on the upper and lower surfaces of one quartz plate 1000. As an effect of removing the slope, in the next mirror polishing process, if the slope of the crystal plate 1000 stands, the polishing pad 1340 may be damaged, or the slope particles of the crystal plate 1000 may fall off and be polished. There is an effect to prevent the surface from being scratched.

  As in the rough polishing step, the quartz plate 1000 whose slope has been removed is placed in a carrier 1330 and mirror-polished (step 206). As the polishing surface plates 1310 and 1320, those having a cork-like polishing pad 1340 attached thereto are used. The reason why the cork-like polishing pad is used is that the cork pad is rich in elasticity and is cheaper than the acrylic polishing pad. In addition, since it is porous, it is easy to hold the abrasive. As the abrasive, an emulsified solution of cerium oxide is used. Cerium oxide is most suitable as a mirror polishing agent for materials having a Vickers hardness of about 400 to 800 in the hardness and particle diameter of the polishing agent, for example, inorganic glass, quartz, hard glass and the like. If it is too hard, it will not be mirror-finished and micro scratches can be formed. Therefore, it is preferable that the surface of the abrasive is appropriately rounded. Cerium oxide is inexpensive and is widely used in general. As the material of the carrier, glass fiber was used as in rough polishing.

  Next, the quartz plate 1000 that has been subjected to mirror polishing is washed (step 207). Use a glass cleaner or alcohol after washing with water. The polishing liquid is generally prepared by adding oils and fats for the purpose of improving slipping and increasing the temperature of the processed surface to increase the polishing efficiency. Since this fat and oil adheres to the surface of the processed product, a strong alkaline glass polish that dissolves alcohol and fat is used for the purpose of removing the fat and oil.

  Finally, the quartz plate 1000 that has been cleaned is inspected (step 208). The inspection contents are generally an external inspection for inspecting scratches and the like, and a dimensional inspection for measuring external dimensions and the like.

  Since the quartz plate used in the liquid crystal projector is used by attaching a polarizing plate to the quartz plate, the thermal conductivity of the quartz plate is important. Since the polarizing plate has a different light-shielding location and light-shielding amount depending on the light-modulated image, it is necessary to quickly dissipate the heat generated by the light-shielding. If there is a partial accumulation of heat, the temperature rises due to this heat. Since the polarizing plate is composed of an organic compound, the polarizing plate is deteriorated by this temperature rise. Quartz disperses this partial heat accumulation and prevents the polarizing plate from being deteriorated by heat.

  Quartz crystal has a thermal conductivity of about 2.3 times the plane parallel to the Z-axis and the plane perpendicular to the Z-axis. The thermal conductivity of the quartz crystal is 0.029 cal / cm / sec / ° C. in the plane parallel to the Z axis, but 0.016 cal / cm / sec / ° C. in the plane perpendicular to the Z axis. Therefore, a plane parallel to the Z axis having high thermal conductivity is used. Further, since the thermal conductivity of the quartz crystal is considered to be substantially proportional to the angle formed with the Z-axis, the higher the thermal conductivity of the quartz plate, the higher the performance that can be maintained. At this time, assuming that the value having the maximum thermal conductivity is the maximum thermal conductivity, when trying to suppress the price while maintaining the performance to some extent, ± 25 with respect to the maximum thermal conductivity which is the allowable value of the thermal conductivity. % Is reasonable. If the thermal conductivity is to be maintained within this range, the axial accuracy with respect to the quartz plate surface becomes ± 10 degrees. This value is a very rough value compared with the crystal axis accuracy of a quartz plate used for electrical applications requiring axial accuracy in minutes or seconds.

  Further, in this embodiment, the Z plane is cut out with an X-ray crystal orientation measuring device and the angle between the plane and the Z plane is measured, and this Z plane is processed as a reference, and the Z axis direction of the crystal plate is guaranteed. Yes. Since a relatively rough value of the axial accuracy is sufficient, it is less necessary to confirm the axial accuracy of the product by measuring the crystal orientation for each process. Therefore, by setting the crystal plate having an angle formed between one surface of the crystal plate and the Z axis to be ± 10 degrees or less, it is possible to reduce the axial accuracy confirmation work, and there is an effect of reducing work speed and manufacturing cost.

  A non-reflective coating is applied to the polished surface (step 209), and the crystal is cut to a specified dimension (step 210). When the specified size is a rectangular parallelepiped with respect to the surface on which the quartz plate 100 antireflection coating 1310 is applied, for example, the cutting lines 1320 and 1330 to be cut are cut at right angles as shown in FIG.

  Next, the case where the crystal plate of Example 1 is used for a part of a liquid crystal panel will be described. FIG. 15 is a perspective view of a liquid crystal panel using a crystal plate 1540. The periphery of the polarizing plate is heated by light from the light source. For example, in a liquid crystal panel used for a liquid crystal projector, a polarizing plate and a liquid crystal panel are often close to each other, and the liquid crystal panel is easily affected by heat emitted from the polarizing plate. A normal liquid crystal panel 1500 has a guaranteed heat resistant temperature of around 70 degrees Celsius. A crystal plate 1540 is attached to a surface opposite to the surface on which the X driver 1510 and the Y driver electrode 1530 are formed in the liquid crystal panel. The crystal plate 1540 used in the liquid crystal panel 1500 is used for the purpose of dispersing heat storage in the surface of the crystal plate 1540 and lowering the temperature as a whole. Note that it is possible to replace all or part of the glass constituting the liquid crystal panel 1500 with the crystal plate 1540 for use.

  Next, an example in which the crystal plate of Example 1 is used for a liquid crystal panel exterior will be described. FIG. 16 shows a perspective view and a sectional view in which a crystal plate is used for a liquid crystal panel exterior. Inorganic glasses 1610 and 1615 are respectively arranged before and after the light transmission surface of the liquid crystal panel main body 1620. Further, a crystal plate 1600 is disposed in front of the inorganic glass 1610 on the side on which light is incident. Then, the upper and lower sides and both side surfaces of the liquid crystal panel main body 1620, the inorganic glasses 1610 and 1615, and the crystal plate 1600 are covered with the outer wall 1630. Further, the space between the quartz plate 1600 and the inorganic glass 1610 is filled with grease or the like. The grease or the like used here is added in order to suppress heat conduction, so that it is preferable that the thermal conductivity is low. When the crystal plate 1600 is disposed in front of the liquid crystal panel main body 1620 through the inorganic glass 1610, the crystal glass 1600 has a uniform heat distribution and lowers the temperature and the inorganic glass 1610 has a low thermal conductivity. The heat of the plate 1600 is not easily transmitted to the liquid crystal panel body 1610, and there is an effect of suppressing the temperature rise in the liquid crystal panel body 1620.

  Note that all or some of the inorganic glasses 1610 and 1615 may be replaced with quartz plates. Further, a crystal plate 1600 may be used for the outer wall 1630.

  Next, the case where the crystal plate of Example 1 is used for a liquid crystal projector will be described. FIG. 17 is a perspective view and a side view of the quartz plate. FIG. 18 is a perspective view and a cross-sectional view of a crystal plate attached to a support base. FIG. 19 is a perspective view and a cross-sectional view of a light modulator of a liquid crystal projector using a crystal plate.

  In FIG. 17, a single crystal with polarization plate 1800 has an antireflection film 1830 formed on one side of a light transmission surface of a crystal plate 1840. Further, a polarizing plate 1810 is attached to the surface of the antireflection film 1830 opposite to the crystal plate 1840. Further, a non-reflective coating is applied or a wide-angle film 1820 is attached to the surface of the quartz plate 1840 opposite to the surface on which the antireflection film 1830 is formed. The reason for applying an antireflection coating or attaching a wide-angle film 1820 is to prevent stray light. Note that optical shielding may be performed with a metal film or the like instead of the non-reflective coating or the wide-angle film 1820.

  Next, the crystal unit 1800 with a polarizing plate is attached to the support bases 1720 and 1725 to obtain a crystal 1700 with a polarizing plate. The four end faces of the crystal unit 1800 with a polarizing plate are fixed by support bases 1720 and 1725. The support base 1720 for attaching the left and right end faces of the crystal unit 1800 with a polarizing plate is provided with a groove 1722 for holding a portion of the crystal plate 1840 to which the polarizing plate 1810 is not attached. The crystal unit 1800 with a polarizing plate is grooved 1722 and then fixed and fixed with an organic adhesive. When using an organic adhesive, since the organic adhesive generally has poor thermal conductivity, it is preferable to dissipate the heat dispersed in the quartz plate surface by blowing with a fan. The quartz plate 1840 used here preferably has a surface having high light transmittance and high heat dispersibility, that is, a surface having high thermal conductivity, to be a surface on which a polarizing plate is attached.

  Further, the support base 1725 that holds the upper and lower end faces of the crystal unit with polarization plate 1800 is not provided with a groove that holds the crystal unit with polarization plate 1800. The single crystal 1800 with a polarizing plate and the support base 1725 are bonded with an organic adhesive. In this way, the top, bottom, left, and right end surfaces of the single crystal with polarization plate 1800 are fixed to the support bases 1720 and 1725. In addition, the groove | channel provided in the support stands 1720 and 1725 may be provided in either the support stand 1720 or the support stand 1725, and may be provided in both. Further, if the quartz crystal with a polarizing plate 1800 and the support bases 1720 and 1725 are securely fixed, the groove may not be provided.

  The light modulator of the liquid crystal projector uses two crystal plates 1700 with polarizing plates. Two crystal plates 1700 with polarizing plates are arranged on the transmitted light side and transmitted light side of the liquid crystal panel 1920, respectively. The crystal 1700 with a polarizing plate disposed on the transmitted light side of the liquid crystal panel 1920 directs the polarizing plate 1810 to the transmitted light side. The crystal 1700 with a polarizing plate disposed on the transmitted light side of the liquid crystal panel 1920 directs the polarizing plate 1810 to the transmitted light side.

  When the transmitted light is incident on the crystal 1700 with a polarizing plate on the transmitted light side, the transmitted light uniformly strikes the polarizing plate, so that uniform heat is generated. Further, since the light transmitted through the liquid crystal panel 1920 is optically modulated by the liquid crystal panel 1920, the polarization angle in the liquid crystal panel 1920 changes depending on the image information in the liquid crystal panel 1920. When light is blocked by this polarization angle without being transmitted by the polarizing crystal 1700 on the transmitted light side, this light becomes heat. In other words, the heat generation in the crystal 1700 with a polarizing plate on the transmitted light side is determined by the image to be light-modulated, and the heat generation is non-uniform in the plane.

  Since the polarizing plate 1810 has a structure in which an organic polymer compound chain is elongated on an organic film, it is vulnerable to heat. When the temperature of the polarizing plate 1810 rises entirely or partially due to heat generation, the polarizing plate cannot withstand heat generation and the performance deteriorates. In any case, the crystal 1700 with a polarizing plate is required to have a performance of dispersing the heat of the heat storage portion and lowering the temperature of the heat storage portion.

  If heat is shielded by the crystal 1700 with a polarizing plate on the transmitted light side, the polarizing plate 1810 is attached to inorganic glass without using the crystal 1700 with a polarizing plate on the transmitted light side. The polarizing plate 1810 may be attached directly to the liquid crystal panel 1920.

It is the top view and sectional drawing which showed the crystal | crystallization shape and crystal axis of the artificial quartz crystal. (A) is the top view which showed the perpendicular | vertical surface with respect to the Z-axis, (B) is the top view which showed the horizontal surface with respect to the Z-axis. It is a flowchart which shows the cutting-out process of a crystal plate. It is a schematic diagram which shows the cutting state of the reference plane of quartz. It is a schematic diagram which shows the crystal orientation measurement of the reference plane of quartz. It is a schematic diagram which shows the cutting-out of the crystal grown in the X-axis direction. It is a top view which shows the removal part of the crystal seed crystal. It is a schematic diagram which shows the crystal orientation measurement in Z surface. It is a schematic diagram which shows the cutting of Lambert. It is a perspective view of a bevel removal apparatus. It is a perspective view which shows the outer periphery grinding method of a quartz plate. It is a schematic diagram which shows a rough polishing double-side polishing machine and lapping. It is a perspective view which shows the double-side polisher for mirror polishing. It is a schematic diagram which cuts out quartz to the designated size. It is a flowchart which shows grinding | polishing of a quartz plate. It is a perspective view of the liquid crystal panel which uses a quartz plate. It is the perspective view and top view when a crystal plate is used for a liquid crystal panel exterior. It is the perspective view and sectional drawing of a single crystal with a polarizing plate. It is the perspective view and sectional drawing of a crystal with a polarizing plate. The perspective view and sectional drawing which showed the light modulator of the liquid crystal projector are shown.

Explanation of symbols

100 Artificial crystal 110 Seed crystal 1600, 1840 Crystal plate 1810 Polarizing plate 1500, 1620, 1920 Liquid crystal panel

Claims (2)

Preparing an artificially grown quartz crystal;
Searching for an end face in the X-axis direction perpendicular to the seed crystal of the quartz crystal;
Cutting and flattening the end surface in the X-axis direction;
Measuring the crystal orientation of the surface flattened by the cutting;
Determining whether to cut off the X-axis direction growth part, and cutting off the X-axis direction growth part when it is determined to cut off;
Cutting both sides of the seed crystal and removing the seed crystal;
A step of cutting the growth portion in the X-axis direction to obtain a crystal plate by cutting the cut crystal crystal perpendicularly to the X-axis so as to be a plane including the Z-axis from the cut crystal crystal;
A method for producing a crystal plate for a display device. In addition to the method for manufacturing a crystal plate for a display device according to claim 1,
Polishing the cut quartz plate;
Applying an anti-reflective coating to the polished quartz plate;
A method for producing a crystal plate for a display device.