JP4497301B2 - Resonator - Google Patents

Description

  The present invention relates to a resonator using a piezoelectric ceramic resonator, and particularly to a resonator excellent in free fall resistance.

Conventionally, as a resonator for obtaining an oscillation frequency, a piezoelectric resonant component (resonator) using a piezoelectric ceramic resonator is known. As shown in FIG. 1, the piezoelectric ceramic resonator 2 is formed with a pair of vibration electrodes 22 and 23 on the front and back main surfaces of a polarized piezoelectric ceramic substrate 21, and the pair of vibration electrodes 22 and 23. It is configured so that vibration is confined in the vicinity. A resonator 1 using the piezoelectric ceramic resonator 2 includes a substrate 3 and a cap 5 as shown in FIG. The substrate 3 has a reinforcing function and is made of ceramics such as steatite (MgO.SiO ₂ ) and alumina (Al ₂ O ₃ ), and usually has a thickness of about 0.05 to 0.7 mm. . Terminal electrodes 31 and 32 are formed on the front and back surfaces of the substrate 3. The substrate 3 may be configured to have both a dielectric function and a reinforcing function using dielectric single plate ceramics, laminated ceramics, or the like. Examples of the dielectric single plate ceramic include a compound mainly composed of barium titanate. Examples of laminated ceramics include low-temperature sintered ceramics with internal electrodes. For example, Al ₂ O ₃ and CaZrO ₃ added with glass components and Cu and Ag conductive pastes are simultaneously fired at 1000 ° C or lower. You can get it.
On the terminal electrodes 31 and 32, the piezoelectric ceramic resonator 2 is bonded and fixed by a conductive stator 4 having both conductive and adhesive functions such as conductive resin and solder. A constant vibration space is secured between the piezoelectric ceramic resonator 2 and the substrate 3 by the thickness of the conductive stator 4.
The cap 5 is bonded to the substrate 3 with an adhesive, for example, so as to cover the piezoelectric ceramic resonator 2. The cap 5 can also be made of ceramics such as steatite (MgO.SiO ₂ ) and alumina (Al ₂ O ₃ ) as with the substrate 3, but may be made of a metal such as an alloy. The plate thickness of the cap 5 may be approximately the same as that of the substrate 3.
The resonator 1 as described above is disclosed, for example, in JP-A-8-237066 (Patent Document 1).

JP-A-8-237066

The piezoelectric ceramic resonator 2 is usually composed of a piezoelectric ceramic composition having a perovskite structure such as a tetragonal or rhombohedral PZT (PbZrO ₃ —PbTiO ₃ solid solution) system or PT (PbTiO ₃ ) system near room temperature. Has been. When the piezoelectric ceramic resonator 2 is used as the resonator 1, not only is it required that Q _max (Q _max = tan θ: θ is a phase angle) in the band is large as an electrical characteristic, but in recent years surface-mounted components Is widely used, and when mounted on a printed circuit board, heat resistance is also required to pass through a solder reflow furnace. Note that high or good heat resistance means that the variation in characteristics after receiving a thermal shock is small.

The piezoelectric ceramic resonator 2 constituting the resonator 1 is required to have high mechanical strength in addition to the above characteristics. Therefore, for example, it is required as a product specification that the piezoelectric ceramic resonator 2 is free from chipping, cracking, and other abnormalities (free fall resistance) even when the resonator 1 is dropped freely on concrete from a height of 1 m. As described above, since the product specification requiring mechanical strength is not the physical characteristic itself, conventionally, the guideline on how to improve the free fall resistance has not been clear. Moreover, although the drop height in the case of evaluating the current free fall resistance is 1 m, it is assumed that the drop of the drop height will increase in the future as the demand for mechanical strength increases.
The present invention has been made based on such a technical problem, and an object thereof is to provide a piezoelectric ceramic resonator excellent in free fall resistance. Another object of the present invention is to provide a resonator including such a piezoelectric ceramic resonator.

The inventors of the present invention conducted a free drop test by changing the drop height of the resonator, and found that there is a strong correlation between the defect rate and the three-point bending strength and drop height of the piezoelectric ceramic resonator. confirmed. That is, the present invention is a resonator including a piezoelectric ceramic resonator on which a vibrating electrode is formed and a substrate that supports the piezoelectric ceramic resonator, and the piezoelectric ceramic resonator has σ _b ≧ 11.6 × H + 171.5. (Where H: drop height (m), σ _b : three-point bending strength (MPa), H = 1.0, 1.5, 2.0), and the substrate has terminal electrodes. The piezoelectric ceramic resonator is supported at both ends by the substrate via the conductive member, and is electrically connected to the vibrating electrode. The distance L between the supports, which is the distance between the conductive members, is 3λ or more (where λ = piezoelectric ceramic resonance) is the wavelength of the child), the upper limit of the distance L between supports is a contour -0.5mm of the resonator, the piezoelectric ceramic _{resonator, Pbα [(Mn 1/3 Nb 2/3} ) x Ti y Zr z] O main component a perovskite compound represented by the ₃ And then, the A _l 2 _{O 3} as a subcomponent 0. It is a resonator characterized by containing 15 wt% or more and 3.0 wt% or less. However, in the above composition formula, 0.97 ≦ α ≦ 1.01, 0.04 ≦ x ≦ 0.16, 0.48 ≦ y ≦ 0.58, and 0.32 ≦ z ≦ 0.41.

  ADVANTAGE OF THE INVENTION According to this invention, the resonator provided with the piezoelectric ceramic resonator excellent in free fall tolerance can be provided. Moreover, according to the present invention, if the three-point bending strength of the piezoelectric ceramic resonator is grasped, a highly reliable resonator can be provided without performing an actual drop test.

Hereinafter, the present invention will be described in detail based on embodiments.
FIG. 2 is a cross-sectional view for explaining the resonator 1 in the present embodiment. Since the basic configuration of the resonator 1 shown in FIG. 1 has been described in the section of the prior art, repeated description thereof is omitted here.
In the present invention, the piezoelectric ceramic resonator 2 which is a constituent element of the resonator 1 has σ _b ≧ 11.6 × H + 171.5 (where H: drop height (m), σ _b : three-point bending strength (MPa ), H = 1.0, 1.5, 2.0 ). By satisfying this condition, when the resonator 1 is dropped from a predetermined height, it is possible to prevent the piezoelectric ceramic resonator 2 from being broken or chipped. Hereinafter, a drop test in which this condition is derived will be described.

A three-point bending test was performed on a test piece made of the following piezoelectric ceramic. The test piece was produced as follows.
As starting materials, lead oxide (PbO) powder, titanium oxide (TiO ₂ ) powder, zirconium oxide (ZrO ₂ ) powder, manganese carbonate (MnCO ₃ ) powder, niobium oxide (Nb ₂ O ₅ ) powder, aluminum oxide (Al ₂₎ O ₃ ) powder, silicon oxide (SiO ₂ ) powder, and chromium oxide (Cr ₂ O ₃ ) powder were prepared. This raw material powder was weighed so as to have a molar ratio of Pb _0.99 [(Mn _1/3 Nb _2/3 ) _0.10 Ti _0.53 Zr _0.37 ] O _3, and then MnCO as an auxiliary component with respect to the total weight of each powder. ₃ powder 0.2 wt%, SiO ₂ powder 0.07 wt%, Al ₂ O ₃ powder 0.5 wt% and Cr ₂ O ₃ powder 0.1 wt% were added, and each was wet mixed using a ball mill. Went for hours.
The obtained slurry was sufficiently dried and press-molded, and then calcined in the air at 800 ° C. for 2 hours. After finely pulverizing with a ball mill until the calcined body had an average particle size of 0.7 μm, the finely pulverized powder was dried. An appropriate amount of PVA (polyvinyl alcohol) as a binder was added to the dried finely pulverized powder and granulated. About 3 g of the granulated powder was put into a mold having a cavity having a length of 20 mm and a width of 20 mm, and molded using a uniaxial press molding machine at a pressure of 245 MPa. After the binder removal treatment was performed on the obtained molded body, a main body firing was performed in the atmosphere at 1150 to 1250 ° C. for 2 hours to obtain a sintered body. Both surfaces of this sintered body were flattened to a thickness of 0.5 mm using a lapping machine, and then cut to 15 mm × 7.0 mm, and temporary electrodes for polarization were formed at both ends (7.0 mm direction). Thereafter, a polarization treatment was performed by applying an electric field of 3 kV / mm for 20 minutes in a silicon oil bath at a temperature of 150 ° C. The polarization direction was a direction parallel to the plate, and the vibration mode was a thickness-shear mode. Thereafter, the temporary electrode was removed. The sample size after removal of the temporary electrode is 15 mm × 7.0 mm × 0.5 mm. A lapping machine was again polished to a thickness of about 0.3 mm, and a test piece of length × width × thickness = 7.0 mm × 2.5 mm × 0.3 mm was cut out by cutting.

In addition, the three-point bending test was performed according to JIS R 1601 using the above test piece and applying the following conditions.
Crosshead speed: 0.2mm / min
Crosshead radius of curvature / distance between fulcrums: 0.1 (crosshead radius of curvature = 0.5 mm, distance between fulcrums = 5 mm)

Next, after preparing the piezoelectric ceramic resonator 2 from the test piece, it was assembled in the resonator 1 shown in FIG. 1 and then subjected to a free drop test on concrete. There were three drop heights H of 1.0 m, 1.5 m, and 2.0 m, and three drops were performed at each height.
When the relationship between the defect rate by the drop test and the three-point bending strength σ _b was determined, the result shown in FIG. 5 was obtained. That is, for each drop height H, the following relationship is established between the defect rate γ (%) and the three-point bending strength σ _b (MPa). Note that R in FIG. 5 is a correlation coefficient, and R ² indicates the square value thereof.
Drop height 1.0 m: γ = −0.28515 × σ _b +52.188
Drop height 1.5 m: γ = −0.77684 × σ _b +145.31
Drop height 2.0 m: γ = −0.94684 × σ _b +184.28

From the relationship between the defect rate γ (%) and the three-point bending strength σ _b , the three-point bending strength σ _{b0 at} which the defect rate γ becomes 0% at each drop height H is as follows.
Drop height 1.0 m: σ _b0 = 183.0 MPa
Drop height 1.5 m: σ _b0 = 189.1 MPa
Drop height 2.0 m: σ _b0 = 194.6 MPa

From the above results, the relationship between the drop height H and the three-point bending strength σ _b0 that can reduce the defect rate γ to 0% can be obtained. As shown in FIG. 6 , this relationship is expressed as σ _b ≧ 11.6 × H + 171.5 (where H: drop height (m), σ _b : three-point bending strength (MPa), H = 1.0. 1.5, 2.0 ). Therefore, in the present invention, the piezoelectric ceramic resonator 2 that satisfies this condition is used.

The procedure for producing the piezoelectric ceramic resonator 2 from the test piece is as follows.
Both surfaces of the test piece were flattened to a thickness of 0.5 mm with a lapping machine, and then cut to 15 mm × 5.0 mm to form a temporary electrode for polarization at both ends (5.0 mm direction). Thereafter, a polarization treatment was performed by applying an electric field of 3 kV / mm for 20 minutes in a silicon oil bath at a temperature of 150 ° C. The polarization direction was a direction parallel to the plate, and the vibration mode was a thickness-shear mode. Thereafter, the temporary electrode was removed. The sample size after removal of the temporary electrode is 15 mm × 5.0 mm × 0.5 mm. The lapping machine was again polished to a thickness of about 0.3 mm, and the vibrating electrodes 22 and 23 were formed using a vacuum deposition apparatus. The vibrating electrodes 22 and 23 are composed of a Cr underlayer having a thickness of 0.01 μm and Ag having a thickness of 2 μm. After forming the vibrating electrodes 22 and 23, the piezoelectric ceramic resonator 2 of 3.5 mm × 0.6 mm × 0.3 mm was manufactured by cutting out from the above test pieces. The piezoelectric ceramic resonator 2 is bonded to the substrate 3 by the conductive stator 4, but is raised by the thickness of the conductive stator 4 to secure a vibration space. The substrate 3 is made of steatite, and terminal electrodes 31 and 32 are formed on the upper and lower surfaces. The thickness of the substrate 3 was 0.45 mm. Next, a cap 5 made of steatite is bonded to the substrate 3 so as to protect the piezoelectric ceramic resonator 2. Finally, a thin film electrode was deposited on the side surface of the substrate 3 so as to connect the terminal electrodes 31 and 32 formed on the upper and lower surfaces of the substrate 3 after roughening the end by barrel polishing. The final size of the resonator 1 is 4.5 mm × 2.0 mm × 1.1 mm.

The support distance L in the resonator 1 was 4.06λ. Note that λ is the wavelength of the piezoelectric ceramic resonator 2, and in the case of the fundamental wave, a relationship of t = 1/2 × λ (t: thickness) is established. When using the third harmonic wave, t = 3/2 × λ (t: thickness).
In the case of thickness-shear mode, distance L between supports is Ri der than 3 [lambda], it is favorable preferable not less than 3.75Ramuda. This is necessary in order not to suppress vibration confined in the vicinity of the vibrating electrodes 23 and 23. The upper limit of the inter-support distance L is the outer shape of the resonator 1 (L1 in FIG. 2) −0.5 mm , which is a necessary condition for securing the adhesive width of the cap 5 having airtightness. Here, the inter-support distance L refers to a distance in a direction parallel to the polarization direction.
Also, if the polarization direction is vertical thickness longitudinal mode to the main surface, also support distance L is at least 3 [lambda], it is favorable preferable not less than 3.75Ramuda. In this case, the inter-support distance L is the distance in the longitudinal direction of the piezoelectric ceramic resonator 2.

  Although the resonator 1 having the structure shown in FIG. 2 has been described in the above embodiment, it goes without saying that the application of the present invention is not limited to the resonator 1 shown in FIG. For example, the present invention can be applied to the resonator 30 having the structure shown in FIG. In the resonator 30, the capacitive element 6 is disposed between the substrate 3 and the piezoelectric ceramic resonator 2. In FIG. 3, the same members as those in FIG. 1 are denoted by the same reference numerals as those in FIG.

  Further, the piezoelectric ceramic resonator 2 is not limited to the form shown in FIG. 1, but a form in which a taper is formed as shown in FIG. 4 (a), and a grooving process as shown in FIG. 4 (b). It can apply to the piezoelectric ceramic resonator 2 of various forms, such as a form to which is given.

As described above, according to the present invention, σ _b ≧ 11.6 × H + 171.5 (where H: drop height (m), σ _b : three-point bending strength (MPa), H = 1.0, 1 .5, 2.0 ), which is characterized by the use of a piezoelectric ceramic composition having the following conditions, a preferable piezoelectric ceramic composition and a method for producing the same will be described below.

<Piezoelectric ceramics>
The piezoelectric ceramic used in the present invention contains PZT having a perovskite structure as a main component, and this main component contains Mn and Nb . The main component is represented by the following composition formula. The chemical composition here refers to the composition after sintering.

Pbα [(Mn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
In the composition formula, 0.97 ≦ α ≦ 1.01,
0.04 ≦ x ≦ 0.16,
0.48 ≦ y ≦ 0.58,
0.32 ≦ z ≦ 0.41.
In the composition formula, α, x, y, and z each represent a molar ratio.

The reasons for limiting α, x, y, and z in the composition formula are as follows.
Alpha shows the Pb amount shall be the range of 0.97 ≦ α ≦ 1.01. If α is less than 0.97, it is difficult to obtain a dense sintered body. On the other hand, when α exceeds 1.01, good heat resistance cannot be obtained. Therefore, α is in the range of 0.97 ≦ α ≦ 1.01 , more preferably 0.98 ≦ α <1.00, and more preferably 0.99 ≦ α <1.00. .

X showing the amount of Mn and Nb amount shall be the range of 0.04 ≦ x ≦ 0.16. When x is less than 0.04, Q _max is small. On the other hand, when x exceeds 0.16, good heat resistance cannot be obtained. Therefore, x is in the range of 0.04 ≦ x ≦ 0.16 , more preferably 0.06 ≦ x ≦ 0.14, and more preferably 0.07 ≦ x ≦ 0.11. .

  Y indicating the amount of Ti is in a range of 0.48 ≦ y ≦ 0.58. If y is less than 0.48, good heat resistance cannot be obtained. On the other hand, when y exceeds 0.58, it is difficult to obtain good temperature characteristics. Therefore, y is preferably in the range of 0.48 ≦ y ≦ 0.58, more preferably 0.49 ≦ y ≦ 0.57, and 0.50 ≦ y ≦ 0.55. Is more preferable.

  Z indicating the amount of Zr is in the range of 0.32 ≦ z ≦ 0.41. When z is less than 0.32 or exceeds 0.41, good temperature characteristics cannot be obtained. Therefore, z is preferably in the range of 0.32 ≦ z ≦ 0.41, more preferably 0.33 ≦ z ≦ 0.40, and 0.34 ≦ z ≦ 0.39. Is more preferable. In addition, that a temperature characteristic is favorable means that the change of the characteristic of the piezoelectric ceramic accompanying the temperature change in a use environment is small.

In the piezoelectric ceramic applied to the present invention, 0.15 wt% or more of Al ₂ O ₃ with respect to the main component Pbα [(Mn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃ as a subcomponent . Add 0 wt% or less. Furthermore, it is possible to contain one or more S iO _2, MnCO ₃ and Cr ₂ O _3.
Al ₂ O ₃ and SiO ₂ are effective for improving the mechanical strength of piezoelectric ceramics. Al ₂ O ₃ is added over 0.15 wt% for the principal components, it is more preferable to add more than 0.6 wt%. Even if the amount of Al ₂ O ₃ added is increased, the upper limit of the piezoelectric ceramic is not particularly limited because it does not impair the properties of the piezoelectric ceramics. Is 3.0 wt% or less, preferably 2.0 wt% or less, more preferably 1.5 wt% or less.
The amount of SiO ₂ is the main component, in particular _{Pbα [(Mn 1/3 Nb 2/3)} x Ti y Zr z] O 3 0.005~0.15wt% relative, more preferred SiO ₂ The addition amount is 0.01 to 0.12 wt%, and the more preferable addition amount of SiO ₂ is 0.01 to 0.07 wt%.

MnCO ₃ is effective in improving the sinterability. In the case of containing MnCO ₃ as an accessory component, the preferable amount of MnCO ₃ added is 0.65 wt% with respect to the main composition, particularly Pbα [(Mn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃ . Hereinafter, the more preferable amount of Mn added is 0.50 wt% or less. A more preferable amount of MnCO ₃ is 0.01 to 0.40 wt%, and an even more preferable amount of Mn is 0.05 to 0.3 wt%.
Cr ₂ O ₃ is effective in obtaining good heat resistance. The preferable amount of Cr ₂ O ₃ added is 0.65 wt% or less with respect to the main composition, particularly Pbα [(Mn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃ , and more preferably Cr ₂ O ₃ added. The amount is 0.50 wt% or less. The more preferable addition amount of Cr ₂ O ₃ is 0.01 to 0.30 wt%, and the more preferable addition amount of Cr ₂ O ₃ is 0.01 to 0.10 wt%.
In addition, the above subcomponent is a preferable example to the last, and it does not exclude using another subcomponent.

<Manufacturing method>
Next, the preferable manufacturing method of the piezoelectric ceramic used for this invention is demonstrated in the order of the process.
(Raw material powder, weighing)
As the main component material, an oxide or a powder of a compound that becomes an oxide by heating is used. Specifically, PbO powder, TiO ₂ powder, ZrO ₂ powder, MnCO ₃ powder, Nb ₂ O ₅ powder and the like can be used. Each raw material powder is weighed so as to correspond to the composition to be finally obtained. In addition, not only the raw material powder mentioned above but it is good also considering the powder of the complex oxide containing 2 or more types of metals as raw material powder.
Next, a predetermined amount of subcomponents is added to the total weight of each weighed powder. What is necessary is just to select suitably the average particle diameter of each raw material powder in the range of 0.1-3.0 micrometers.

(Calcination)
After the raw material powder is wet-mixed, calcination is performed in a range of 700 to 950 ° C. for a predetermined time. The atmosphere at this time may be N ₂ or air. What is necessary is just to select suitably the holding time of calcination in the range of 0.5 to 5 hours.
In addition, after mixing the raw material powder of the main component and the raw material powder of the subcomponent, both were shown to be subjected to calcining, but the timing of adding the raw material powder of the subcomponent is not limited to that described above. Absent. For example, first, only the main component powder is weighed, mixed, calcined and pulverized. And you may make it add and mix a predetermined amount of raw material powder of a subcomponent with the powder of the main component obtained after calcining pulverization.

(Granulation / molding)
The pulverized powder is granulated into granules in order to smoothly execute the subsequent molding process. At this time, a small amount of an appropriate binder such as polyvinyl alcohol (PVA) is added to the pulverized powder, and these are mixed well, and then granulated by passing through a mesh for example to obtain a granulated powder. Next, the granulated powder is pressure-molded at a pressure of 200 to 300 MPa to obtain a molded body having a desired shape.

(Baking)
After removing the binder added during molding, the molded body is heated and held for a predetermined time within a range of 1100 to 1250 ° C. to obtain a sintered body. The atmosphere at this time may be N ₂ or air. The heating and holding time may be appropriately selected within the range of 0.5 to 4 hours.

(Polarization treatment)
After the electrode for polarization treatment is formed on the sintered body, the polarization treatment is performed. In the polarization treatment, an electric field of 1.0 to 2.0 Ec (Ec is a coercive electric field) is applied to the sintered body at a temperature of 50 to 300 ° C. for 0.5 to 30 minutes.
When the polarization treatment temperature is less than 50 ° C., Ec increases, so that the polarization voltage increases and polarization becomes difficult. On the other hand, when the polarization treatment temperature exceeds 300 ° C., the insulation of the insulating oil is remarkably lowered, so that polarization becomes difficult. Therefore, the polarization treatment temperature is 50 to 300 ° C. A preferable polarization treatment temperature is 60 to 250 ° C, and a more preferable polarization treatment temperature is 80 to 200 ° C.
Moreover, if the electric field to be applied is less than 1.0 Ec, polarization does not proceed. On the other hand, when the applied electric field exceeds 2.0 Ec, the actual voltage becomes high and the sintered body is likely to break, making it difficult to produce piezoelectric ceramics. Therefore, the electric field applied during the polarization process is 1.0 to 2.0 Ec. A preferable applied electric field is 1.1 to 1.8 Ec, and a more preferable applied electric field is 1.2 to 1.6 Ec.

When the polarization treatment time is less than 0.5 minutes, the polarization is insufficient and sufficient characteristics cannot be obtained. On the other hand, when the polarization treatment time exceeds 30 minutes, the time required for the polarization treatment becomes long and the production efficiency is inferior. Therefore, the polarization treatment time is 0.5 to 30 minutes. A preferable polarization treatment time is 0.7 to 20 minutes, and a more preferable polarization treatment time is 0.9 to 15 minutes.
The polarization treatment is performed in an insulating oil heated to the above-described temperature, for example, a silicon oil bath. The polarization direction is determined according to a desired vibration mode. That is, in the thickness shear mode, polarization is performed in a direction parallel to the main surface, and in the thickness longitudinal mode, polarization is performed in a direction perpendicular to the main surface.

  The piezoelectric ceramic is polished to a desired thickness, and then a vibrating electrode is formed. Next, after being cut into a desired shape by a dicing saw or the like, it functions as a piezoelectric ceramic resonator.

It is a perspective view which shows the structure of a piezoelectric ceramic resonator. It is sectional drawing which shows the structure of a resonator. It is sectional drawing which shows the other structure of a resonator. It is a side view which shows the other structure of a piezoelectric ceramic resonator. It is a graph which shows the relationship between 3-point bending strength and the defect rate in a drop test. 3-point bending strength at which drop height and defect rate are 0% σ _b Is a graph showing the relationship .

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1,30 ... Resonator, 2 ... Piezoelectric ceramic resonator, 22, 23 ... Vibrating electrode, 3 ... Board | substrate, 31, 32 ... Terminal electrode, 4 ... Conductive stator, 5 ... Cap, 6 ... Capacitance element

Claims (1)

A piezoelectric ceramic resonator on which a vibrating electrode is formed;
A resonator comprising a substrate for supporting the piezoelectric ceramic resonator,
The piezoelectric ceramic resonator has σ _b ≧ 11.6 × H + 171.5 (where H: drop height (m), σ _b : three-point bending strength (MPa), H = 1.0, 1.5 2.0)
The substrate includes terminal electrodes;
The piezoelectric ceramic resonator is supported at both ends by the substrate via a conductive member, and is electrically connected to the vibration electrode.
The distance L between supports, which is the distance between the conductive members, is 3λ or more (where λ is the wavelength of the piezoelectric ceramic resonator),
The upper limit of the inter-support distance L is the external shape of the resonator -0.5 mm,
The piezoelectric ceramic _{resonator, Pbα [(Mn 1/3 Nb 2/3} ) x Ti y Zr z] as a main component a perovskite compound represented by O _3, 0 to A _l 2 _{O 3} as a subcomponent. A resonator comprising 15 wt% or more and 3.0 wt% or less.
However, in the above composition formula, 0.97 ≦ α ≦ 1.01
0.04 ≦ x ≦ 0.16
0.48 ≦ y ≦ 0.58
0.32 ≦ z ≦ 0.41

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