JP4494610B2 - Sputtering target material for thin film formation - Google Patents
Sputtering target material for thin film formation Download PDFInfo
- Publication number
- JP4494610B2 JP4494610B2 JP2000267822A JP2000267822A JP4494610B2 JP 4494610 B2 JP4494610 B2 JP 4494610B2 JP 2000267822 A JP2000267822 A JP 2000267822A JP 2000267822 A JP2000267822 A JP 2000267822A JP 4494610 B2 JP4494610 B2 JP 4494610B2
- Authority
- JP
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- Prior art keywords
- thin film
- sputtering target
- target material
- alloy
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【０００１】
【発明の属する技術分野】
本発明は、薄膜形成用スパッタリングターゲット材に係わる。
【０００２】
【従来の技術】
従来、電子機器、電子部品において、配線材料として、Ｃｕ、Ａｌ、Ｍｏ、Ｔａ、Ｗ、Ｃｒ等の純金属による金属材料、Ａｌ−Ｃｕ、Ａｌ−Ｃｕ−Ｓｉ、Ａｌ−Ｐｄ、Ｔａ−Ｓｉ、Ｗ−Ｓｉ等の合金による金属材料を用いて配線パターンが形成されている。
【０００３】
【発明が解決しようとする課題】
ところが、上記金属材料は耐食性において信頼性が不明確である。
本発明は、このような従来の技術に存在する問題点に着目してなされたものであり、耐候性の高い薄膜を形成することができる薄膜形成用スパッタリングターゲット材を提供することを目的とする。
【０００５】
【課題を解決するための手段】
上記の目的を達成するために、本発明は、Ｃｕ（銅）を主成分として、Ｃｕを９９．４５〜９７．０重量％含有し、それにＡｇ（銀）を０．４５〜２．０重量％添加し、Ｔｉ（チタン）を０．１〜１．０重量％添加してなるＣｕ−Ａｇ−Ｔｉ（銅−銀−チタン）合金金属材料を用いて製造された薄膜形成用スパッタリングターゲット材を要旨とする。
【０００６】
本発明の薄膜形成用スパッタリングターゲット材は、ＣｕにＡｇ及びＴｉを加えることで、Ａｇ及びＴｉの耐候性の相互作用により、塩素、水素、酸素、硫黄という、大気中あるいは特殊環境中で要求される高い耐候性の向上を図ることができる。よって、薄膜と基板との接合性が強化され、より高い信頼性が得られる。
【０００７】
【発明の実施の形態】
本発明に係るＣｕ合金材料として、Ａｇを選択したのは、合金とした場合に、Ａｇの高反射率特性、酸素や水素に対する耐候性を狙った為である。ここで、合金の各金属の内容は請求項１に記載の内容である。
【０００８】
一方、Ｔｉは、空気中で安定であり、硫黄や塩素の反応に対して耐性があり、特に海水に対する耐食性に優れている。
従って、この実施形態の金属材料は以下のような効果を発揮する。
【０００９】
Ｃｕに一定量のＡｇと、一定量の耐食性向上材料であるＴｉ、Ｐｄの内の少なくともＴｉを添加することで、塩素、水素、酸素、硫黄という、大気中、あるいは特殊環境中で要求される高い耐候性の向上を図ることができる。
【００１０】
ここで、スパッタリングターゲット材の製造方法について、説明する。
本実施形態のスパッタリングターゲット材の作製方法としては、真空中での溶融法が挙げられる。
【００１１】
Ｃｕ合金を溶融法で作製する場合には、まず、Ｃｕ−Ｘ（ＸはＴｉ、Ｐｄ等）母合金を作製する。
次に、高周波溶解炉において、Ｃｕ−Ｘ母合金、Ｃｕ、Ａｇの溶解を行う。このときのＣｕの量は、全体溶解量から母合金中のＣｕの量を差し引いた量とする。
【００１２】
この際の溶融温度は、例えば１１００〜１８００℃として、例えばＣ、Ａｌ2Ｏ3、ＭｇＯ、ＺｒＯ2等の坩堝が用いられる。
溶解した後、Ｃ、Ａｌ2Ｏ3、ＭｇＯ、ＺｒＯ2等の鋳型に溶融物を注湯する。引け巣を防止するため、２００〜１２００℃で予め鋳型加熱を行っておく。
【００１３】
鋳型内の溶融物を、冷却、凝固し、インゴットを鋳型から取り出して、常温まで冷却する。
次に、インゴットの最上部の押湯部を切断除去し、インゴットを圧延機により圧延し、例えば９０（ｍｍ）×９０（ｍｍ）×８．１（ｍｍ）の板状の合金を作製する。
【００１４】
その後、例えば電気炉でＡｒガスを封入した状態で熱処理し、その後さらにプレス機によりそり修正を行う。
その後、製品形状にワイヤーカットし、製品前面を耐水研磨紙を用いて研磨し、表面粗度を調整し、最終的に本発明のＡｇ合金のスパッタリングターゲット材を作製することができる。
【００１５】
上述のように、本実施形態のＣｕ合金のスパッタリングターゲット材を作製する場合において、Ｃｕに対してＡｇ及びその他の元素Ｘを添加して溶融する場合においても、従来行われている容易な方法を適用することができ、価格的にも製法的にもメリットが大きい。
【００１６】
なお、ここで、スパッタによる薄膜は、成膜時に、各々の元素を同時にスパッタすることにより得られるものを示し、一体型による薄膜は、ターゲット製作の段階で、各々の元素を混合させた合金による薄膜を示す。
【００１７】
次に、薄膜について行った、耐候性の試験結果について説明する。
ここでは、塩素試験を行った。
塩素試験は、常温で、５％濃度の塩水にこのサンプルを３０分、６０分、１２０分浸漬して行った。
【００１８】
表１は、Ｃｕ−Ｔｉ−Ａｇ合金薄膜についてした、塩化試験結果を示したものである。
【００１９】
【表１】
【００２０】
なお、この発明は前記実施形態以外に、以下のように具体化することができる。
【００２１】
・前記実施形態では、ターゲットの製造法に関して、溶融法の一例を挙げたが、製造法はこれに限定されるわけではなく、焼結法等の方法もある。
【００２２】
【発明の効果】
本発明のスパッタリングターゲット材は、酸素や硫黄、塩素等に対して、高い耐久性を確保することができる。
【００２３】
本発明のスパッタリングターゲット材は、従来用いられている簡易な溶融法により、製品の作製を行うことができる。
本発明のスパッタリングターゲット材を用いて形成した薄膜は、耐候性の点で優れている。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thin-film forming sputtering target material.
[0002]
[Prior art]
Conventionally, in electronic devices and electronic parts, as wiring materials, metal materials made of pure metals such as Cu, Al, Mo, Ta, W, Cr, Al—Cu, Al—Cu—Si, Al—Pd, Ta—Si, A wiring pattern is formed using a metal material made of an alloy such as W-Si.
[0003]
[Problems to be solved by the invention]
However, the reliability of the metal material is unclear in terms of corrosion resistance.
The present invention has been made in view of the problems existing in the conventional art, aims to provide a that can be formed with high weather resistance thin thin-film forming sputtering target material And
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention contains Cu (copper) as a main component, contains 99.45 to 97.0% by weight of Cu, and Ag (silver) in an amount of 0.45 to 2.0% by weight. % , And a sputtering target material for forming a thin film manufactured using a Cu-Ag-Ti (copper-silver-titanium) alloy metal material obtained by adding 0.1 to 1.0% by weight of Ti (titanium). The gist.
[0006]
Thin film forming sputtering target material of the present invention, the addition of Ag and Ti in Cu, the weather resistance of the interaction of Ag and Ti, request chlorine, hydrogen, oxygen, that sulfur, in the atmosphere or special environment It is possible to improve the weather resistance. Therefore, the bondability between the thin film and the substrate is enhanced, and higher reliability is obtained.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
The reason why Ag is selected as the Cu alloy material according to the present invention is that, when an alloy is used, the high reflectivity characteristics of Ag and the weather resistance against oxygen and hydrogen are aimed at. Here, the content of each metal in the alloy is the content according to 請 Motomeko 1.
[0008]
On the other hand, Ti is stable in the air, resistant to the reaction of sulfur and chlorine, and particularly excellent in corrosion resistance to seawater.
Therefore, the metal material of this embodiment exhibits the following effects.
[0009]
By adding a certain amount of Ag to Cu and at least Ti of a certain amount of Ti , Pd, which is a corrosion resistance improving material, it is required in the atmosphere of chlorine, hydrogen, oxygen, and sulfur, or in special environments. The high weather resistance can be improved.
[0010]
Here, the manufacturing method of a sputtering target material is demonstrated.
Examples of the method for producing the sputtering target material of the present embodiment include a melting method in a vacuum.
[0011]
When a Cu alloy is produced by a melting method, first, a Cu—X (X is Ti, Pd, etc.) mother alloy is produced.
Next, the Cu—X master alloy, Cu, and Ag are melted in a high frequency melting furnace. The amount of Cu at this time is an amount obtained by subtracting the amount of Cu in the mother alloy from the total dissolution amount.
[0012]
The melting temperature at this time is set to 1100 to 1800 ° C., for example, and a crucible such as C, Al 2 O 3 , MgO, or ZrO 2 is used.
After melting, the melt is poured into a mold such as C, Al 2 O 3 , MgO, or ZrO 2 . In order to prevent shrinkage, mold heating is performed in advance at 200 to 1200 ° C.
[0013]
The melt in the mold is cooled and solidified, and the ingot is removed from the mold and cooled to room temperature.
Next, the uppermost feeder part of the ingot is cut and removed, and the ingot is rolled by a rolling mill to produce, for example, a plate-like alloy of 90 (mm) × 90 (mm) × 8.1 (mm).
[0014]
Thereafter, for example, heat treatment is performed with Ar gas sealed in an electric furnace, and then warp correction is further performed by a press machine.
Thereafter, the product is wire cut, the front surface of the product is polished with water-resistant abrasive paper, the surface roughness is adjusted, and finally the sputtering target material of the Ag alloy of the present invention can be produced.
[0015]
As described above, when the sputtering target material of the Cu alloy of the present embodiment is produced, even when Ag and other elements X are added to the Cu and melted, the conventional easy method is performed. It can be applied and has great merit in terms of price and manufacturing process.
[0016]
Here, a thin film formed by sputtering indicates that obtained by simultaneously sputtering each element during film formation, and an integrated thin film is formed by an alloy in which each element is mixed at the stage of target production. A thin film is shown.
[0017]
Next, the weather resistance test results performed on the thin film will be described.
Here, a chlorine test was conducted.
The chlorine test was performed by immersing this sample in 5% strength salt water for 30 minutes, 60 minutes, and 120 minutes at room temperature.
[0018]
Table 1 shows the results of the chlorination test for Cu-Ti-Ag alloy thin films.
[0019]
[Table 1]
[0020]
The present invention can be embodied as follows in addition to the above embodiment .
[0021]
-In the said embodiment, although an example of the melting method was given regarding the manufacturing method of a target, a manufacturing method is not necessarily limited to this, There also exists methods, such as a sintering method.
[0022]
【The invention's effect】
Scan sputtering target material of the present invention, oxygen or sulfur, with respect to chlorine and the like, it is possible to ensure high durability.
[0023]
Scan sputtering target material of the present invention, by a simple melting method conventionally used, it is possible to prepare the product.
Thin film formed by using a scan sputtering target material of the present invention is excellent in terms of weather resistance.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000267822A JP4494610B2 (en) | 2000-09-04 | 2000-09-04 | Sputtering target material for thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000267822A JP4494610B2 (en) | 2000-09-04 | 2000-09-04 | Sputtering target material for thin film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002069550A JP2002069550A (en) | 2002-03-08 |
| JP4494610B2 true JP4494610B2 (en) | 2010-06-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000267822A Expired - Lifetime JP4494610B2 (en) | 2000-09-04 | 2000-09-04 | Sputtering target material for thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4494610B2 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7626665B2 (en) | 2004-08-31 | 2009-12-01 | Tohoku University | Copper alloys and liquid-crystal display device |
| JP3754011B2 (en) * | 2002-09-04 | 2006-03-08 | デプト株式会社 | Metal material for electronic component, electronic component, electronic device, method for processing metal material, method for manufacturing electronic component, and electro-optical component |
| US8430978B2 (en) | 2003-08-05 | 2013-04-30 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
| AT7491U1 (en) * | 2004-07-15 | 2005-04-25 | Plansee Ag | MATERIAL FOR CONCRETE ALLOY COPPER ALLOY |
| US7940361B2 (en) | 2004-08-31 | 2011-05-10 | Advanced Interconnect Materials, Llc | Copper alloy and liquid-crystal display device |
| KR20070084209A (en) | 2004-11-15 | 2007-08-24 | 닛코 킨조쿠 가부시키가이샤 | Sputtering target for production of metallic glass film and process for producing the same |
| JP2008203808A (en) * | 2006-09-08 | 2008-09-04 | Mitsubishi Materials Corp | Wiring and electrode for flat panel display using tft transistor free from thermal defect generation and having excellent adhesiveness and sputtering target for forming the same |
| US7642552B2 (en) | 2007-01-12 | 2010-01-05 | Tohoku University | Liquid crystal display device and manufacturing method therefor |
| US7633164B2 (en) | 2007-04-10 | 2009-12-15 | Tohoku University | Liquid crystal display device and manufacturing method therefor |
| US7782413B2 (en) | 2007-05-09 | 2010-08-24 | Tohoku University | Liquid crystal display device and manufacturing method therefor |
| JP5571887B2 (en) | 2008-08-19 | 2014-08-13 | アルティアム サービシズ リミテッド エルエルシー | Liquid crystal display device and manufacturing method thereof |
| JP5453663B2 (en) | 2010-07-02 | 2014-03-26 | 合同会社先端配線材料研究所 | Thin film transistor |
| US8895978B2 (en) | 2010-07-02 | 2014-11-25 | Advanced Interconnect Materials, Llc | Semiconductor device |
| JP2013133489A (en) * | 2011-12-26 | 2013-07-08 | Sumitomo Metal Mining Co Ltd | Cu ALLOY SPUTTERING TARGET, METHOD FOR PRODUCING THE SAME, AND METAL THIN FILM |
| CN104046835A (en) * | 2014-07-01 | 2014-09-17 | 张家港市佳晟机械有限公司 | Precious metal alloy with high stability |
| JP6213684B2 (en) * | 2014-11-07 | 2017-10-18 | 住友金属鉱山株式会社 | Copper alloy target |
| CN105365437A (en) * | 2015-12-22 | 2016-03-02 | 江苏艾克斯展示器材有限公司 | Newspaper stand |
| TWI592946B (en) * | 2016-11-11 | 2017-07-21 | Metal Ind Res & Dev Ct | Copper alloy wire and its manufacturing method |
| US20180148816A1 (en) * | 2016-11-28 | 2018-05-31 | Metal Industries Research & Development Centre | Copper alloy wire and manufacturing method thereof |
| CN114318048A (en) * | 2021-12-16 | 2022-04-12 | 镇江市镇特合金材料有限公司 | Copper alloy for conductive tile with high welding performance and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218440A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS61183426A (en) * | 1985-02-06 | 1986-08-16 | Furukawa Electric Co Ltd:The | High strength, highly conductive heat resisting copper alloy |
| JPH06184669A (en) * | 1992-12-18 | 1994-07-05 | Mitsubishi Materials Corp | Pitting corrosion resistant copper alloy piping for feeding water and hot water |
| JPH11236665A (en) * | 1998-02-20 | 1999-08-31 | Japan Energy Corp | Backing plate for sputtering target and sputtering target/backing plate assembly |
-
2000
- 2000-09-04 JP JP2000267822A patent/JP4494610B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218440A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS61183426A (en) * | 1985-02-06 | 1986-08-16 | Furukawa Electric Co Ltd:The | High strength, highly conductive heat resisting copper alloy |
| JPH06184669A (en) * | 1992-12-18 | 1994-07-05 | Mitsubishi Materials Corp | Pitting corrosion resistant copper alloy piping for feeding water and hot water |
| JPH11236665A (en) * | 1998-02-20 | 1999-08-31 | Japan Energy Corp | Backing plate for sputtering target and sputtering target/backing plate assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002069550A (en) | 2002-03-08 |
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