JP4485932B2 - Flash memory device and programming and erasing method using the same - Google Patents

Description

  The present invention relates to a flash memory device, and a programming and erasing method using the same, and more particularly, a flash memory device capable of stabilizing programming characteristics and erasing characteristics by changing a structure of a floating gate, programming using the same, and programming thereof It relates to an erasing method.

  Of the semiconductor memory devices, the most functionally ideal device can be easily programmed by the user arbitrarily switching the storage state by an electrical method, and the memory state is maintained even when the power is removed. This is a non-volatile memory device that can be used.

  Currently, when viewed from the aspect of process technology, nonvolatile memory devices are roughly divided into floating gate series and MIS (Metal-Insulator-Semiconductor) series in which two or more kinds of dielectric films are stacked in layers. Is done.

  A floating gate series nonvolatile memory device typically has an ETOX (EPROM Tunnel Oxide) structure that realizes memory characteristics using a potential well and is most widely applied as an EEPROM.

On the other hand, a MIS series nonvolatile memory element performs a memory function using traps present at a dielectric film, a bulk, a dielectric film-dielectric film interface, and a dielectric film-semiconductor interface.
A typical structure of the floating gate series nonvolatile memory device, and a programming method and an erasing method using the same will be described with reference to the drawings.

FIG. 1 is a cross-sectional view of a memory device having an ETOX structure among floating gate series nonvolatile memory devices according to the prior art.
As shown in FIG. 1, the conventional flash memory device has a stacked structure in which a tunnel oxide film 102, a floating gate 103, a dielectric film 104, and a control gate 105 are sequentially stacked on a p-type semiconductor substrate 101. A source (S) region and a drain (D) region are formed in the surface of the semiconductor substrate on both sides of the body.

A programming and erasing method of a floating gate series nonvolatile memory device having such a structure includes the following processes.
The programming method uses the method of injecting electrons into the potential well formed in the floating gate to increase the threshold voltage, while the erasing method is the method of injecting holes into the potential well to recombine electrons and holes. The method of lowering the threshold voltage is used.

  Here, hot electron injection and hot hole injection are usually used for injection of electrons and holes. At the time of erasing, FN (Fowler-Nordheim) tunneling may be used instead of the hot hole injection method, but there is a disadvantage that the erasing speed is considerably slow, and the above hot hole injection method is mainly adopted. Yes.

  However, the conventional programming and erasing methods as described above have the following problems.

  That is, when a hot electron injection and hot hole injection method is used during programming and erasing, the interface between the tunnel oxide film and the substrate or the inside of the tunnel oxide film or the interface between the tunnel oxide film and the floating gate is caused by the hot electrons and hot holes. The trap site is generated. Such a trap site does not keep the threshold voltage constant. In addition, there is a problem that electrons or holes stored in the floating gate escape through the trap site.

  The present invention has been devised to solve the above-described problems. A flash memory device capable of stabilizing programming characteristics and erasing characteristics by changing the structure of a floating gate, and a programming and erasing method using the same. The purpose is to provide.

  In order to achieve the above object, a flash memory device according to the present invention includes a first conductive semiconductor substrate having a field region and an active region, a tunnel oxide film formed on the active region, and the tunnel oxide film. A floating gate formed thereon (wherein the floating gate includes at least first and second floating gates, and the first and second floating gates have different energy band gaps (Eg)), and the floating gate A dielectric film formed on the gate; a control gate formed on the dielectric film; and a second conductivity type source / drain region formed in an active region of the semiconductor substrate on both sides of the floating gate. It is characterized by comprising.

  In order to achieve the above object, a flash memory device according to the present invention includes a first conductive type semiconductor substrate having a field region and an active region, a tunnel oxide film formed on the active region, and the tunnel. A first floating gate and a second floating gate formed in parallel with each other on the oxide film; a dielectric film formed on the first floating gate; a control gate formed on the dielectric film; And a second conductivity type source / drain region formed in an active region of the semiconductor substrate on both sides of the first floating gate.

  The first floating gate and the control gate may be made of polysilicon implanted with second conductivity type impurity ions.

  The second floating gate may be formed of a material having an energy band gap larger than that of the semiconductor substrate and smaller than that of the dielectric film.

  According to another aspect of the present invention, there is provided a method for programming a flash memory device, wherein a first floating gate and a second floating gate formed in parallel with each other on a first conductivity type semiconductor substrate, A control gate formed on one floating gate; and a second conductivity type source / drain region formed on the semiconductor substrate on both sides of the first floating gate, wherein the second floating gate has an energy band gap. In a method of programming a flash memory device formed of a material higher than that of the first floating gate and implanted with a second conductivity type impurity, a positive (+) voltage is applied to the control gate and a ground or negative voltage is applied to the second floating gate. At the same time as applying the voltage (−), The drain / drain region and the semiconductor substrate are floated, and electrons are generated in the second floating gate, and the electrons are moved to the first floating gate and stored therein.

  According to another aspect of the present invention, there is provided a method for erasing a flash memory device, wherein a first floating gate and a second floating gate formed in parallel with each other on a first conductivity type semiconductor substrate, A control gate formed on one floating gate; and a second conductivity type source / drain region formed on the semiconductor substrate on both sides of the first floating gate, the second floating gate having an energy band gap In a method for erasing a flash memory device formed of a material higher than that of the first floating gate and implanted with a second conductivity type impurity, and electrons are stored in the first floating gate, holes are injected into the first floating gate, 1 The electrons stored in the floating gate and the above The semiconductor substrate is erased by inducing coupling with the injected holes or by discharging electrons stored in the first floating gate to the semiconductor substrate using an FN tunneling method.

  In order to achieve the above object, a flash memory device according to the present invention includes a first conductive type semiconductor substrate having a field region and an active region, a tunnel oxide film formed on the active region, and the tunnel. A first floating gate and a second floating gate formed in parallel with each other on the oxide film, a dielectric film formed over the first floating gate and the second floating gate, and a dielectric film formed on the dielectric film. And a second conductivity type source / drain region formed in the active region of the semiconductor substrate on both sides of the first and second floating gates.

  The width of the first floating gate is smaller than or equal to the width of the depletion layer of the source / drain region.

  The second floating gate may be formed of a material having an energy band gap higher than that of the first floating gate and lower than that of the dielectric film.

  According to another aspect of the present invention, there is provided a flash memory device programming method comprising: a first floating gate and a second floating gate formed on a semiconductor substrate in parallel with each other through a tunnel oxide film; A control gate formed on the first and second floating gates; a second conductivity type source / drain region formed on the semiconductor substrate on both sides of the first and second floating gates; In a method of programming a flash memory device, the floating gate is formed of a material having an energy band gap higher than that of the first floating gate, and a positive (+) voltage is applied to the control gate and the drain region to Ground the region and deplete the drain region Hot electrons are generated in the region, the hot electrons are injected into the second floating gate through the tunnel oxide film, and the electrons injected into the second floating gate can move to the first floating gate. And

  According to another aspect of the present invention, there is provided a flash memory device erasing method comprising: a first floating gate and a second floating gate formed on a semiconductor substrate in parallel with each other through a tunnel oxide film; A control gate formed on the first and second floating gates; a second conductivity type source / drain region formed on the semiconductor substrate on both sides of the first and second floating gates; The floating gate is formed of a material having an energy band gap higher than that of the first floating gate. In the flash memory device erasing method in which electrons are stored in the first floating gate, the control gate and the drain region are negative ( −) And a positive (+) voltage are applied, and the semiconductor substrate A plate and a source region are grounded or floated, a hole is generated in a depletion region of the drain region, the hole is injected into the second floating gate through the tunnel oxide film, and the hole is injected into the second floating gate. Is moved to the first floating gate to be erased by being combined with electrons stored in the first floating gate.

  In order to achieve the above object, a flash memory device according to the present invention includes a first conductive type semiconductor substrate having a field region and an active region, a tunnel oxide film formed on the active region, and the tunnel. A first floating gate formed on and in contact with the oxide film; second and third floating gates on both sides of the first floating gate; a dielectric film formed on the first floating gate; and the dielectric The semiconductor device includes a control gate formed in the film and a second conductivity type source / drain region formed in an active region of the semiconductor substrate on both sides of the first floating gate.

  The second and third floating gates are formed above the source / drain regions.

  The second and third floating gates may be formed of a material having an energy band gap larger than that of the first floating gate and smaller than that of the dielectric film.

  A second conductivity type impurity ion is implanted into the second floating gate, and a first conductivity type impurity ion is implanted into the third floating gate.

  According to another aspect of the present invention, there is provided a method of programming a flash memory device, comprising: a first floating gate formed on a first conductive semiconductor substrate in parallel; Second and third floating gates formed, a control gate formed on the first floating gate, and a second conductivity type source / drain region formed on the semiconductor substrate on both sides of the first floating gate. And the second and third floating gates are formed of a material having an energy band gap higher than that of the first floating gate, the second floating gate is implanted with second conductivity type impurity ions, and the third floating gate is Flash memo implanted with first conductivity type impurity ions In the device programming method, a positive (+) voltage is applied to the control gate, and a ground or negative (−) voltage is applied to the second floating gate, and at the same time, the source / drain regions and the semiconductor substrate are floated, There is another feature in that electrons are generated in the second floating gate, and the electrons are moved to the first floating gate and stored.

  According to another aspect of the present invention, there is provided a method of programming a flash memory device, comprising: a first floating gate formed on a first conductive semiconductor substrate in parallel; Second and third floating gates formed, a control gate formed on the first floating gate, and a second conductivity type source / drain region formed on the semiconductor substrate on both sides of the first floating gate. The second and third floating gates are formed of a material having an energy band gap higher than that of the first floating gate, and second conductivity type impurity ions are implanted into the second floating gate, and the third floating gate is provided. In the state in which the first conductivity type impurity ions are implanted, In the method of erasing a flash memory device in which electrons are stored in the first floating gate, a ground or negative (−) voltage is applied to the control gate, and a positive (+) voltage is applied to the third floating gate, respectively. The source / drain regions, the semiconductor substrate, and the second floating gate are floated, holes are generated in the third floating gate, and the generated holes are moved to the first floating gate to be coupled with the electrons. It is characterized by erasing.

  The flash memory device and the programming and erasing method using the same according to the present invention have the following effects.

  The floating gate constituting the flash memory device is constituted by the first and second floating gates or the first, second and third floating gates, and the constituent material of the second and third floating gates is the constitution of the first floating gate. At the same time as setting the energy band gap to be higher than that of the substance, impurity ions are previously implanted into the second and third floating gates, and a voltage is applied to the second and third floating gates to generate electrons or holes. And the generated electrons or holes are moved to the first floating gate having a more stable energy level, so that the tunnel oxide film is damaged by the conventional hot electron injection or hot hole injection method. Can be prevented in advance.

  As a result, problems such as current leakage due to trap sites can be solved, and a stable threshold voltage can be maintained during programming or erasing.

  Hereinafter, a flash memory device and a programming and erasing method using the same according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a structural cross-sectional view of a flash memory device according to Example 1 of the present invention.
In the flash memory device according to the first embodiment of the present invention, as shown in FIG. 2, a field region and an active region are formed on a semiconductor substrate 201, and an element isolation film (not shown) is formed in the field region.

  A tunnel oxide film 202, a floating gate 203, a dielectric film 204, and a control gate 205 are sequentially formed on the active region of the semiconductor substrate 201. The semiconductor substrate 201 can be an n-type or a p-type semiconductor substrate, but for convenience of description, the description will focus on the p-type semiconductor substrate. Although not shown in the drawing, a protective film is laminated on the entire surface of the substrate 201 including the control gate 205.

  The dielectric film 204 can be formed as an oxide film-nitride film-oxide film structure, and the floating gate 203 and the control gate 205 are made of polysilicon material into which n-type impurity ions are implanted. The floating gate 203 is composed of a combination of the first floating gate 203a and the second floating gate 203b. The first floating gate 203a is formed with a width corresponding to the control gate 205.

  A source region (S) and a drain region (D) are formed on both sides of the first floating gate 203a and the control gate 205 of the semiconductor substrate 201 by n-type impurity ion implantation. The second floating gate 203b is in contact with the first floating gate 203a and is formed on the tunnel oxide film 202 so as to overlap the source region (S) or the drain region (D). That is, the tunnel oxide film 202 has a shape extended to a source (S) or drain (D) region by a predetermined length.

  The width of the second floating gate 203b is not particularly limited. The width can be freely set within a range in which a bias voltage is applied to the second floating gate 203b and the spacer or silicide formed in the source or drain region through subsequent processes is not affected.

  The first floating gate 203a is made of a polysilicon material, and the second floating gate 203b has an energy band gap larger than that of silicon (Eg-1.1 eV) or the first floating gate 203a of the semiconductor substrate 201 and is in contact with the first floating gate 203a. The dielectric film 204 is made of a material smaller than the oxide film (Eg-9.0 eV).

Specifically, the second floating gate 203b may be any one of compound semiconductors such as Sic, Alp, AlAs, AlSb, GaP, GaAs, InP, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe, or Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , BaZrO ₂ , BaTiO ₃ , Ta ₂ O ₅ , CaO, SrO, BaO, La ₂ O ₃ , Ce ₂ O ₃ , Pr ₂ O ₃ , Nd ₂ O ₃ , Pm ₂ O ₃ , Sm ₂ O ₃ , Eu ₂ O ₃ , Gd ₂ O ₃ , Tb ₂ O ₃ , Db ₂ O ₃ , Dy ₂ O ₃ , Ho ₂ O ₃ , Er ₂ O ₃ , Tm ₂ It can be composed of any one of oxides such as O ₃ , Yb ₂ O ₃ , and Lu ₂ O ₃ .

  The second floating gate 203b is doped with impurity ions having a conductivity type opposite to that of the substrate 201. That is, when the substrate is p-type, n-type impurity ions are implanted into the second floating gate, and when the substrate is n-type, p-type impurity ions are implanted into the second floating gate. ing.

  A programming method using the flash memory device according to the first embodiment of the present invention configured as described above will be described.

FIG. 3 is a reference diagram for explaining the movement of electrons and the energy band formed between the protective film / second floating gate / first floating gate / protective film along the line II ′ in FIG. .
First, in order to program data, a positive (+) voltage is applied to the control gate 205 (Vg), a ground or negative (-) voltage is applied to the second floating gate 203b (Vf2), and the source region (S ) (Vs), the drain region (D) (Vd), and the semiconductor substrate 201 (Vsub) are all floated. The voltage applied to the control gate 205 and the second floating gate 203b is preferably set to a condition in which direct injection of electrons occurs most frequently.

  When a voltage is applied under such conditions, the second floating gate 203b is in a state doped with n-type impurity ions, so that electrons are generated by the bias voltage applied to the second floating gate 203b, and the generated voltage is generated. The electrons move to the conduction band (Ec) of the first floating gate 203a having a more stable energy level.

At this time, the electric field applied to the control gate 205 spreads to the second floating gate 203b via the first floating gate 203a, so that electrons injected from the second floating gate 203b are potential wells of the first floating gate 203a. Stored in
A process in which electrons generated in the second floating gate 230b move to the first floating gate 203a will be described with reference to FIG.

  First, the energy band gap represents the energy required for the charge to move from the valence band (Ev) to the conduction band (Ec), and as shown in FIG. 3, the first floating gate 203a. The energy band gap is high in the order of the second floating gate 203b and the protective film.

  The second floating gate 203b is made of a material having an energy band gap larger than that of silicon (Eg-1.1 eV) and lower than that of the silicon oxide film, and is formed in contact with the first floating gate 203a formed of a polysilicon material. Therefore, electrons existing in the conduction band of the second floating gate 203b move to the conduction band of the first floating gate 203a having a more stable conduction band.

On the other hand, electrons transferred to the conduction band of the first floating gate 203a by the electric field applied from the control gate 205 to the second floating gate 203b through the first floating gate 203a in such a state are stably generated. 1 stored in the potential well of the floating gate 203a, the threshold voltage increases.
Thereby, the programming method of the flash memory device according to the first embodiment is completed.

  As described above, in the first embodiment of the present invention, the floating gate is composed of a combination of two materials (first floating gate 203a and second floating gate 203b) having different energy band gaps, and the second floating gate 203b. Is made of a semiconductor into which n-type impurity ions are implanted, and the energy band gap of the second floating gate 203b is set higher than the energy band gap of the first floating gate 203a, so that it is applied to the second floating gate 203b. Electrons are generated from the second floating gate 203b by the bias voltage, and the generated electrons naturally move to the first floating gate 203a. The electrons moved to the first floating gate 203a in this way are stored as they are unless a voltage is externally applied to the first floating gate 203a, and the applied threshold voltage can be stably maintained.

  In addition, trap sites generated at the interface and inside of the tunnel oxide film, which is a problem of the prior art in which electrons are injected into the floating gate through the tunnel oxide film, do not occur at all in the present invention.

  On the other hand, the erasing method uses a hot hole injection method as in the conventional erasing method. That is, holes are injected into the potential well of the first floating gate 203a in which electrons are stored to induce coupling with the electrons stored in the first floating gate 203a, thereby reducing the threshold voltage. Using the FN tunneling method other than the hot hole injection method, the threshold voltage can be reduced by discharging the electrons stored and stored in the first floating gate 203a to the substrate.

  A flash memory device according to Embodiment 2 of the present invention will be described.

FIG. 4 is a structural cross-sectional view of a flash memory device according to Example 2 of the present invention.
In the flash memory device according to the second embodiment of the present invention, as shown in FIG. 4, a field region and an active region are formed on a semiconductor substrate 201, and an element isolation film (not shown) is formed in the field region. Here, an n-type or p-type semiconductor substrate can be used as the semiconductor substrate 201, but for the sake of convenience of description, the description will focus on the p-type semiconductor substrate.

  A tunnel oxide film 202, a floating gate 203, a dielectric film 204, and a control gate 205 are sequentially formed on the active region of the semiconductor substrate 201. A source region (S) and a drain region (D) are formed on both sides of the floating gate 203 and the control gate 205 of the semiconductor substrate 201 by n-type impurity ion implantation. Although not shown in the drawing, a protective film is laminated on the entire surface of the substrate 201 including the control gate 205.

The dielectric film 204 can be formed of an oxide film-nitride film-oxide film structure, and the control gate 205 is made of a polysilicon material into which n-type impurity ions are implanted.
The floating gate 203 is composed of a combination of the first floating gate 203a and the second floating gate 203b, and the width (d1) of the second floating gate 203b is the width of the depletion layer 206 extended from the drain (D) region ( It corresponds to d2) or less, and is preferably about 400 to 600 mm.

  The first floating gate 203a is made of a polysilicon material, and the second floating gate 203b has an energy band gap larger than that of silicon of the semiconductor substrate 201 or the first floating gate 203a, and the dielectric film 204 in contact with the first floating gate 203b. It consists of a material smaller than an oxide film. Specifically, the second floating gate 203b is formed of the same material as that of the first embodiment of the present invention.

A programming and erasing method using the flash memory device according to the second embodiment of the present invention configured as above will be described.
FIG. 5 is a reference diagram for explaining the energy band and electron movement formed between the substrate / tunnel oxide film / second floating gate / dielectric film / control gate along the line II-II ′ of FIG. FIG. 6 is a reference diagram for explaining the energy band and electron movement formed between the protective film / second floating gate / first floating gate / protective film along the line II-II ′ of FIG. It is.

  First, in order to program data, a predetermined amount of positive (+) voltage is applied to the control gate 205 and the drain region (D), respectively, and the source region (S) (Vs) and the semiconductor substrate 201 (Vsub) are grounded. Let The voltages (Vg, Vd) applied to the control gate 205 and the drain region (D) are preferably set to conditions that cause the most hot electron injection.

  When the bias is applied in this way, electrons in the source region (S) move to the channel region below the tunnel oxide film 202. The electrons are accelerated by the electric field applied in the horizontal direction to become hot electrons near the drain region (D), and the tunnel oxide film 202 is generated by the vertical electric field formed by the positive (+) voltage applied to the control gate 205. Then, the energy barrier between the semiconductor substrate 201 and the tunnel oxide film 202 is exceeded, and then injected into the conduction band (Ec) of the second floating gate 203b.

  The movement of electrons from the channel region of the semiconductor substrate 201 to the second floating gate 203b will be described with reference to FIG. That is, FIG. 5 shows that the material layers are formed in the order of the semiconductor substrate / tunnel oxide film / second floating gate / dielectric film / control gate, and are required to move the energy band gap for each material layer. It represents energy.

  As shown in FIG. 5, the energy band gap is higher in the order of conductor, semiconductor, and insulator. In order for electrons existing in the channel region of the semiconductor substrate 201 to move to the conduction band of the second floating gate 203b, energy that can exceed the energy band gap of the tunnel oxide film 202 must be applied. Such energy is obtained by accelerating electrons by a voltage applied to the drain region (D).

  Through such a process, electrons existing in the channel region of the semiconductor substrate 201 can move over the tunnel oxide film 202 to the conduction band of the second floating gate 203b.

  On the other hand, as described above, the second floating gate 203b is made of a material having an energy band gap larger than that of silicon and lower than that of the silicon oxide film, and is formed in contact with the first floating gate 203a formed of a polysilicon material. Therefore, electrons existing in the conduction band of the second floating gate 203b move to the conduction band of the first floating gate 203a having a more stable conduction band.

  The process in which the electrons of the second floating gate 203b move to the first floating gate 203a is as shown in FIG. That is, in the structure constituted by the protective film / second floating gate / first floating gate / protective film, the electrons existing in the conduction band of the second floating gate 203b have a lower energy band gap than the first floating gate 203b. It moves to the conduction band of the floating gate 203a.

  Finally, all the electrons injected into the second floating gate 203b through the tunnel oxide film 202 move to the potential well of the first floating gate 203a. Thus, the flash memory device programming method according to the present invention is completed.

  When the programming method of the flash memory device according to the second embodiment of the present invention as described above is arranged, electrons moved from the source region (S) become hot electrons in the channel region near the drain region (D), and the tunnel oxide film 202 is formed. Moving to the floating gate over the potential barrier is the same as in the conventional programming method, but in the present invention, the floating gate is made of two materials having different energy band gaps (first floating gate 203a and second floating gate 203b). And the energy band gap of the second floating gate 203b is set to be higher than the energy band gap of the first floating gate 203a. Therefore, the electrons injected into the second floating gate 203b naturally occur in the first floating gate 203b. Made to move to the coating gate 203a.

  Thus, as in the conventional case, trap sites are generated at the interface and inside of the tunnel oxide film 202 below the second floating gate 203b into which electrons are injected from the channel region, but injected into the second floating gate 203b. All of the electrons moved to the first floating gate 203a having a low energy band gap, and the electrons injected through the trap site cannot escape. The reason is that electrons stored in the first floating gate 203a must pass through the second floating gate 203b having an energy band gap higher than that of the first floating gate 203a.

  In other words, unless a voltage is applied to the first floating gate 203a from the outside, the electrons of the first floating gate 203a are stored as they are, and the applied threshold voltage can be stably maintained.

  On the other hand, the process of erasing follows a process almost similar to the case of programming. This will be described in detail as follows.

  FIG. 7 is a reference for explaining the movement of energy bands and holes formed between the semiconductor substrate / tunnel oxide film / second floating gate / dielectric film / control gate along the line II-II ′ of FIG. FIG. 8 is a reference for explaining the movement of the energy band and holes formed between the protective film / second floating gate / first floating gate / protective film along the line II-II ′ of FIG. FIG.

  In order to erase the programmed data, a negative (−) voltage is applied to the control gate 205 (Vg), and a positive (+) voltage is applied to the drain regions (D) and (Vd). S) (Vs) and the semiconductor substrate 201 (Vsub) are grounded or floated. Here, it is preferable that the voltage applied to the control gate 205 and the drain region (D) is a condition that causes the most hot hole injection.

  When the voltage is applied in this way, holes generated in the depletion region 206 of the drain region (D) are injected into the valence band of the second floating gate 203b through the tunnel oxide film 202 as shown in FIG. . As shown in FIG. 8, the holes injected into the valence band of the second floating gate 203b move to the valence band of the first floating gate 203a having an energy band gap lower than that of the second floating gate 203b.

  The holes that have moved to the valence band of the first floating gate 203a are combined with electrons injected into the conduction band of the first floating gate 203a according to the programming setting, and as a result, the threshold voltage is lowered. As a result, electrons stored in the first floating gate 203a are removed, and the flash memory device maintains the erased state.

  As in the programming method, holes are injected through the second floating gate 203b, and the injected holes move to the first floating gate 203a having a more stable energy level. It is freed from many side effects due to trap sites generated at the interface and inside of the lower tunnel oxide film 202.

FIG. 9 is a structural cross-sectional view of a flash memory device according to Embodiment 3 of the present invention.
As shown in FIG. 9, the flash memory device according to the third embodiment of the present invention includes a tunnel oxide film 402 and a floating gate 403 on an active region of a p-type semiconductor substrate 401 partitioned by an element isolation film (not shown). The dielectric film 404 and the control gate 405 are sequentially stacked.

  The first floating gate 403a is located in the middle of the floating gate 403, and a second floating gate 403b and a third floating gate 403c are formed on both sides thereof. The first floating gate 403 a is formed with a width corresponding to the control gate 405.

  A source region (S) and a drain region (D) are formed on both sides of the first floating gate 403a and the control gate 405 of the semiconductor substrate 401 by n-type impurity ion implantation. Therefore, the second floating gate 403b and the second floating gate 403c are in contact with the first floating gate 403a and are formed on the tunnel oxide film 402 in the source region (S) or the drain region (D).

  The tunnel oxide film 402 extends to the source region (S) and the drain region (D) by a predetermined length. Although not shown in the drawing, a protective film is laminated on the entire surface of the substrate 401 including the control gate 405.

The dielectric film 404 can be formed of an oxide film-nitride film-oxide film structure, and the control gate 405 is made of a polysilicon material into which n-type impurity ions are implanted.
The widths of the second and third floating gates 403b and 403c are not particularly limited. However, the width can be freely set within a range that does not affect the minimum width for applying the bias voltage and the spacer or silicide formed in the source or drain region through the subsequent process.

  The first floating gate 403a is made of polysilicon, and the second floating gate 403b and the third floating gate 403c have an energy band gap larger than that of silicon (Eg-1.1 eV) of the semiconductor substrate 401 or the first floating gate 403a. It is made of a material smaller than the oxide film (Eg-9.0 eV) of the dielectric film 404 in contact with the floating gate 403a.

  Specifically, the second and third floating gates 403c can be made of the material described in the first embodiment of the present invention. The second floating gate 403b and the third floating gate 403c are implanted with impurity ions of different conductivity types. For example, the second floating gate 403b is doped with n-type impurity ions, and the third floating gate 403c. P-type impurity ions are implanted into.

  A programming and erasing method using the flash memory device according to the third embodiment of the present invention will be described as follows.

  FIG. 10 is a diagram for explaining energy bands and electron movement formed between the protective film / second floating gate / first floating gate / third floating gate / protective film along the line III-III ′ of FIG. FIG. 11 is a diagram of energy bands and holes formed between the protective film / second floating gate / first floating gate / third floating gate / protective film along the line III-III ′ of FIG. It is a reference figure for explaining movement.

The programming method using the flash memory device according to the third embodiment of the present invention is almost the same as the programming method of the flash memory device according to the first embodiment of the present invention.
First, a positive (+) voltage is applied to the control gate 405 (Vg), and a ground or negative (-) voltage is applied to the second floating gate 403b (Vf2). At the same time, the source region (S) (Vs) / drain is applied. The region (D) (Vd), the semiconductor substrate 401 (Vsub), and the third floating gate 403c (Vf3) are all floated.

  When a voltage is applied under such conditions, the second floating gate 403b is in a state doped with n-type impurity ions, so that electrons are generated by the bias voltage applied to the second floating gate 403b, and the generated voltage is generated. As shown in FIG. 10, the electrons move to the conduction band (Ec) of the first floating gate 403a having a more stable energy level than the second floating gate 403b.

  At this time, the electric field applied to the control gate 405 spreads to the second floating gate 403b through the first floating gate 403a, so that electrons injected from the second floating gate enter the potential well of the first floating gate 403a. Store and increase the threshold voltage.

  Meanwhile, the erase method using the flash memory device according to the third embodiment of the present invention is as shown in FIG. First, in order to erase the programmed data, a ground or negative (−) voltage is applied to the control gate 405, and a positive (+) voltage is applied to the third floating gate 403c, and at the same time, the source region (S) / The drain region (D), the semiconductor substrate 401, and the second floating gate 403b are all floated. The voltage applied to the control gate 405 and the third floating gate 403c is preferably set to a condition in which direct injection occurs most frequently.

  When the voltage is applied in this manner, the third floating gate 403c is in a state doped with p-type impurity ions, so that a hole is generated by the voltage applied to the third floating gate 403c, and the generated hole is As shown in FIG. 11, the third floating gate 403c moves to the valence band (Ev) of the first floating gate 403a having a stable energy level. At this time, the electric field applied to the control gate 405 spreads to the third floating gate 403c via the first floating gate 403a, so that the holes injected from the third floating gate 403c are in the valence band of the first floating gate 403a ( Go to Ev).

  Then, the holes that have moved to the valence band (Ev) of the first floating gate 403a are combined with electrons injected into the conduction band (Ec) of the first floating gate 403a according to the programming setting, and as a result, the threshold voltage is lowered. . Accordingly, electrons moved from the second floating gate 403b to the first floating gate are removed, and the flash memory device can maintain the erased state.

FIG. 5 is a structural cross-sectional view of a memory device having an ETOX structure among floating gate series nonvolatile memory devices according to the prior art. 1 is a structural cross-sectional view of a flash memory device according to Example 1 of the present invention. FIG. 3 is a reference diagram for explaining energy bands and electron movement formed between a protective film / second floating gate / first floating gate / protective film along the line I-I ′ of FIG. 2. FIG. 5 is a structural cross-sectional view of a flash memory device according to Example 2 of the present invention. FIG. 5 is a reference diagram for explaining energy bands and electron movement formed between the substrate / tunnel oxide film / second floating gate / dielectric film / control gate along the line II-II ′ in FIG. 4. FIG. 5 is a reference diagram for explaining energy bands and electron movement formed between the protective film / second floating gate / first floating gate / protective film along the line II-II ′ in FIG. 4. FIG. 5 is a reference diagram for explaining the movement of energy bands and holes formed between a semiconductor substrate / tunnel oxide film / second floating gate / dielectric film / control gate along the line II-II ′ of FIG. . FIG. 5 is a reference diagram for explaining the movement of energy bands and holes formed between the protective film / second floating gate / first floating gate / protective film along the line II-II ′ in FIG. 4. FIG. 7 is a structural cross-sectional view of a flash memory device according to Example 3 of the present invention. FIG. 9 is a reference diagram for explaining energy bands and electron movement formed between the protective film / second floating gate / first floating gate / third floating gate / protective film along the line III-III ′ of FIG. It is. Reference diagram for explaining the movement of energy bands and holes formed between the protective film / second floating gate / first floating gate / third floating gate / protective film along the line III-III ′ in FIG. It is.

Explanation of symbols

201, 401 Semiconductor substrate 202, 402 Tunnel oxide film 203, 203a, 203b, 403a, 403b, 403c Floating gate 204, 404 Dielectric film 205, 405 Control gate

Claims (27)

A first conductivity type semiconductor substrate in which a field region and an active region are defined;
A tunnel oxide film formed on the active region;
A first floating gate and a second floating gate formed on and in contact with each other along the substrate surface on the tunnel oxide film;
A dielectric film formed on the first floating gate;
A control gate formed on the dielectric film ;
A second conductivity type source / drain region formed in an active region of the semiconductor substrate on both sides of the first floating gate;
The second floating gate is formed of a material having an energy band gap larger than that of the first floating gate and smaller than that of the dielectric film, and a second conductivity type impurity is implanted, and voltage applying means is applied to the second floating gate. And a second floating gate is formed on the tunnel oxide film so as to overlap the source / drain region.   2. The flash memory device of claim 1, wherein the dielectric film is formed of an oxide film-nitride film-oxide film structure.   The flash memory device of claim 1, wherein the first floating gate and the control gate are formed of polysilicon implanted with second conductivity type impurity ions.   The flash memory device of claim 1, wherein the first floating gate and the control gate are formed to have the same width.   The flash memory device of claim 1, wherein the second floating gate is formed above the source / drain region.   The flash memory device of claim 1, wherein the second floating gate is formed of a material having an energy band gap larger than that of the semiconductor substrate and smaller than that of the dielectric film.   The second floating gate may be any one of a compound semiconductor of Sic, Alp, AlAs, AlSb, GaP, GaAs, InP, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe, or Al2O3, Y2O3, HfO2, ZrO2, BaZrO2, BaTiO3, Ta2O5, CaO, SrO, of BaO, La2O3, Ce2O3, Pr2O3, Nd2O3, Pm2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Db2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, an oxide of Lu2O3 The flash memory device of claim 1, wherein the flash memory device is formed of any one material and is doped with second conductivity type impurity ions. A first floating gate and a second floating gate formed on the first conductivity type semiconductor substrate in contact with each other along the surface of the substrate through a tunnel oxide film, and formed on the first floating gate. A dielectric film; a control gate formed on the dielectric film; and a second conductivity type source / drain region formed on a semiconductor substrate on both sides of the first floating gate. In the method of programming a flash memory device, the energy band gap is made of a material larger than the first floating gate and smaller than the dielectric film, and the second conductivity type impurity is implanted.
A positive (+) voltage is applied to the control gate, and a ground or negative (-) voltage is applied to the second floating gate. At the same time, the source / drain regions and the semiconductor substrate are floated, and the second floating gate A method of programming a flash memory device, comprising generating electrons and moving the electrons to the first floating gate for storage. A first floating gate and a second floating gate formed on the first conductivity type semiconductor substrate in contact with each other along the surface of the substrate through a tunnel oxide film, and formed on the first floating gate. A dielectric film; a control gate formed on the dielectric film; and a second conductivity type source / drain region formed on a semiconductor substrate on both sides of the first floating gate. The flash memory device is formed of a material having an energy band gap larger than that of the first floating gate and smaller than that of the dielectric film, implanted with a second conductivity type impurity, and storing electrons in the first floating gate. In the erasing method,
Holes are injected into the first floating gate to induce coupling between electrons stored in the first floating gate and the injected holes, or stored in the first floating gate using an FN tunneling method. A method of erasing a flash memory device, wherein the erased electrons are discharged to the semiconductor substrate for erasing. A first conductivity type semiconductor substrate in which a field region and an active region are formed;
A tunnel oxide film formed on the active region;
A first floating gate and a second floating gate formed on and in contact with each other along the substrate surface on the tunnel oxide film;
A dielectric film formed over the first floating gate and the second floating gate;
A control gate formed on the dielectric film ;
A second conductivity type source region formed in an active region of the semiconductor substrate, located on a side of the first floating gate facing the junction surface with the second floating gate;
A second conductivity type drain region formed in an active region of the semiconductor substrate located on a side of the second floating gate facing the junction surface with the first floating gate;
The flash memory device, wherein the second floating gate is formed of a material having an energy band gap larger than that of the first floating gate and smaller than that of the dielectric film.   The flash memory device of claim 10, wherein the second floating gate is formed to have a width smaller than or equal to a width of a depletion layer of the source / drain region.   The flash memory device of claim 10, wherein the second floating gate has a width of 400 to 600cm.   The flash memory device of claim 10, wherein the first floating gate is made of polysilicon.   The flash memory device of claim 10, wherein the second floating gate is formed of a material having an energy band gap higher than that of the first floating gate and lower than that of the dielectric film.   The second floating gate may be any one of a compound semiconductor of Sic, Alp, AlAs, AlSb, GaP, GaAs, InP, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe, or Al2O3, Y2O3, HfO2, ZrO2, BaZrO2, BaTiO3, Ta2O5, CaO, SrO, of BaO, La2O3, Ce2O3, Pr2O3, Nd2O3, Pm2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Db2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, an oxide of Lu2O3 The flash memory device of claim 10, wherein the flash memory device is formed of any one material.   The flash memory device of claim 10, wherein the dielectric film is formed of an oxide film-nitride film-oxide film structure. A first floating gate and a second floating gate formed on and in contact with each other along the surface of the substrate through a tunnel oxide film; and a dielectric formed on the first and second floating gates. A body film, a control gate formed on the dielectric film, and a source and drain region of a second conductivity type formed on the semiconductor substrate on both sides of the first and second floating gates, In a method of programming a flash memory device, the second floating gate is formed of a material having an energy band gap larger than that of the first floating gate and smaller than that of the dielectric film.
A positive (+) voltage is applied to the control gate and the drain region, the semiconductor substrate and the source region are grounded, hot electrons are generated in the depletion region of the drain region, and the hot electrons pass through the tunnel oxide film. A method of programming a flash memory device, wherein the electrons are injected into the second floating gate and the electrons injected into the second floating gate are moved to the first floating gate. A first floating gate and a second floating gate formed on and in contact with each other along the surface of the substrate through a tunnel oxide film; and a dielectric formed on the first and second floating gates. A body film, a control gate formed on the dielectric film, and a source and drain region of a second conductivity type formed on the semiconductor substrate on both sides of the first and second floating gates, In the method of erasing a flash memory device, the second floating gate is formed of a material having an energy band gap larger than that of the first floating gate and smaller than the dielectric film, and electrons are stored in the first floating gate.
A negative (-) voltage and a positive (+) voltage are applied to the control gate and the drain region, respectively, and the semiconductor substrate and the source region are grounded or floated to generate holes in the depletion region of the drain region. The holes are injected into the second floating gate through the tunnel oxide film, and the holes injected into the second floating gate are moved to the first floating gate and stored in the first floating gate. A method of erasing a flash memory device, wherein the erasing is performed by combining with electrons. A first conductivity type semiconductor substrate in which a field region and an active region are formed;
A tunnel oxide film formed on the active region;
A first floating gate formed on the tunnel oxide film;
A dielectric film formed on the first floating gate;
Second and third floating gates formed on both sides of the first floating gate so as to be in contact with each other along the substrate surface, wherein the second and third floating gates have an energy band gap of the first floating gate. Second and third floating gates formed of a material larger than the floating gate and smaller than the dielectric film;
A control gate formed on the dielectric film ;
A second conductivity type source / drain region formed in an active region of the semiconductor substrate on both sides of the first floating gate;
The second floating gate is implanted with second conductivity type impurity ions,
The third floating gate is implanted with first conductivity type impurity ions,
A voltage applying means is provided for each of the second and third floating gates, and the second and third floating gates are formed on the tunnel oxide film so as to overlap the source / drain regions.   The flash memory device of claim 19, wherein the dielectric film is formed of an oxide film-nitride film-oxide film structure.   The flash memory device of claim 19, wherein the first floating gate and the control gate are made of polysilicon.   The flash memory device of claim 19, wherein the first floating gate and the control gate are formed to have the same width.   The flash memory device of claim 19, wherein the second and third floating gates are formed above the source / drain regions.   The second and third floating gates may be any one of a compound semiconductor of Sic, Alp, AlAs, AlSb, GaP, GaAs, InP, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe, or Al2O3, Y2O3. , HfO2, ZrO2, BaZrO2, BaTiO3, Ta2O5, CaO, SrO, BaO, La2O3, Ce2O3, Pr2O3, Nd2O3, Pm2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Db2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, oxidation of Lu2O3 The flash memory device of claim 19, wherein the flash memory device is formed of any one of the materials.   20. The flash memory device of claim 19, wherein second conductivity type impurity ions are implanted into the second floating gate, and first conductivity type impurity ions are implanted into the third floating gate. A first floating gate and second and third floating gates formed on both sides of the first floating gate and arranged in contact with each other along the surface of the substrate on a first conductive type semiconductor substrate with a tunnel oxide film therebetween A dielectric film formed on the first floating gate, a control gate formed on the dielectric film, and a second conductivity type source formed on the semiconductor substrate on both sides of the first floating gate. A drain region, and an energy band gap of the second and third floating gates is made of a material larger than that of the first floating gate and smaller than that of the dielectric film, and the second floating gate is made of a second conductivity type impurity ion. And the third floating gate is implanted with first conductivity type impurity ions. In the programming method of the flash memory device,
A positive (+) voltage is applied to the control gate, and a ground or negative (-) voltage is applied to the second floating gate. At the same time, the source / drain regions and the semiconductor substrate are floated, and the second floating gate A method of programming a flash memory device, comprising generating electrons and moving the electrons to the first floating gate for storage. A first floating gate and second and third floating gates formed on both sides of the first floating gate and arranged in contact with each other along the surface of the substrate on a first conductive type semiconductor substrate with a tunnel oxide film therebetween A dielectric film formed on the first floating gate, a control gate formed on the dielectric film, and a second conductivity type source formed on the semiconductor substrate on both sides of the first floating gate. A drain region, wherein the second and third floating gates are formed of a material having an energy band gap larger than that of the first floating gate and smaller than that of the dielectric film, and second conductivity type impurity ions are formed in the second floating gate. And first conductivity type impurity ions are implanted into the third floating gate. In state, the erase method of a flash memory device which electrons in the first floating gate is stored,
Applying a ground or negative (-) voltage to the control gate and a positive (+) voltage to the third floating gate, respectively, and simultaneously floating the source / drain region, the semiconductor substrate and the second floating gate, A method of erasing a flash memory device, wherein holes are generated in the third floating gate, and the generated holes are moved to the first floating gate to be coupled with the electrons.

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