JP4484833B2 - Organic electroluminescence device - Google Patents
Organic electroluminescence device Download PDFInfo
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- JP4484833B2 JP4484833B2 JP2006066647A JP2006066647A JP4484833B2 JP 4484833 B2 JP4484833 B2 JP 4484833B2 JP 2006066647 A JP2006066647 A JP 2006066647A JP 2006066647 A JP2006066647 A JP 2006066647A JP 4484833 B2 JP4484833 B2 JP 4484833B2
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- 238000005401 electroluminescence Methods 0.000 title description 9
- 150000001875 compounds Chemical class 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 59
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 52
- 125000000217 alkyl group Chemical group 0.000 claims description 45
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 42
- 125000003118 aryl group Chemical group 0.000 claims description 42
- 150000002894 organic compounds Chemical class 0.000 claims description 26
- 125000005843 halogen group Chemical group 0.000 claims description 20
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 18
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 12
- 125000003545 alkoxy group Chemical group 0.000 claims description 11
- 125000004414 alkyl thio group Chemical group 0.000 claims description 10
- 125000005110 aryl thio group Chemical group 0.000 claims description 10
- 125000004104 aryloxy group Chemical group 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 133
- 125000004432 carbon atom Chemical group C* 0.000 description 79
- -1 metal complex compound Chemical class 0.000 description 61
- 125000001424 substituent group Chemical group 0.000 description 48
- 238000000034 method Methods 0.000 description 36
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 30
- 229910052799 carbon Inorganic materials 0.000 description 28
- 238000002347 injection Methods 0.000 description 24
- 239000007924 injection Substances 0.000 description 24
- 229910052757 nitrogen Inorganic materials 0.000 description 23
- 239000000243 solution Substances 0.000 description 23
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- 229910052717 sulfur Inorganic materials 0.000 description 18
- 239000003446 ligand Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 150000001721 carbon Chemical group 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 15
- 125000004433 nitrogen atom Chemical group N* 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 230000005525 hole transport Effects 0.000 description 14
- 238000005160 1H NMR spectroscopy Methods 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
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- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 12
- 239000012299 nitrogen atmosphere Substances 0.000 description 12
- 238000010898 silica gel chromatography Methods 0.000 description 12
- 125000004434 sulfur atom Chemical group 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 125000000623 heterocyclic group Chemical group 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 125000005647 linker group Chemical group 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 125000003396 thiol group Chemical group [H]S* 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 238000007733 ion plating Methods 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 5
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 5
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 5
- 150000002829 nitrogen Chemical group 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 235000002597 Solanum melongena Nutrition 0.000 description 4
- 125000002252 acyl group Chemical group 0.000 description 4
- 125000004423 acyloxy group Chemical group 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 4
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 4
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 4
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 4
- 229910000024 caesium carbonate Inorganic materials 0.000 description 4
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 description 4
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- ORIHZIZPTZTNCU-YVMONPNESA-N salicylaldoxime Chemical compound O\N=C/C1=CC=CC=C1O ORIHZIZPTZTNCU-YVMONPNESA-N 0.000 description 4
- 125000000213 sulfino group Chemical group [H]OS(*)=O 0.000 description 4
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 4
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 4
- 125000006296 sulfonyl amino group Chemical group [H]N(*)S(*)(=O)=O 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- 125000004149 thio group Chemical group *S* 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical group C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 125000001072 heteroaryl group Chemical group 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000013110 organic ligand Substances 0.000 description 3
- 150000004866 oxadiazoles Chemical class 0.000 description 3
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoric acid amide group Chemical group P(N)(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 150000003057 platinum Chemical class 0.000 description 3
- 150000003058 platinum compounds Chemical group 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 3
- IGISPMBUGPHLBY-UHFFFAOYSA-N 1-iodo-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC(I)=C1 IGISPMBUGPHLBY-UHFFFAOYSA-N 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- 125000006163 5-membered heteroaryl group Chemical group 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- ZSXGLVDWWRXATF-UHFFFAOYSA-N N,N-dimethylformamide dimethyl acetal Chemical compound COC(OC)N(C)C ZSXGLVDWWRXATF-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical compound C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
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- 239000010408 film Substances 0.000 description 2
- 150000008376 fluorenones Chemical class 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 150000007978 oxazole derivatives Chemical class 0.000 description 2
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- KLFRPGNCEJNEKU-FDGPNNRMSA-L (z)-4-oxopent-2-en-2-olate;platinum(2+) Chemical compound [Pt+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O KLFRPGNCEJNEKU-FDGPNNRMSA-L 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- 150000000183 1,3-benzoxazoles Chemical class 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- YQTCQNIPQMJNTI-UHFFFAOYSA-N 2,2-dimethylpropan-1-one Chemical group CC(C)(C)[C]=O YQTCQNIPQMJNTI-UHFFFAOYSA-N 0.000 description 1
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical class [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical class C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 description 1
- MHMGFOKNFJCCBK-UHFFFAOYSA-N 2-phenoxypyridine;platinum Chemical class [Pt].C=1C=CC=NC=1OC1=CC=CC=C1 MHMGFOKNFJCCBK-UHFFFAOYSA-N 0.000 description 1
- GBGYFLULVQYBHE-UHFFFAOYSA-N 2-phenylpyridine;platinum Chemical class [Pt].C1=CC=CC=C1C1=CC=CC=N1 GBGYFLULVQYBHE-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical class Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Description
本発明は金属錯体化合物及びそれを含有する有機電界発光素子に関する。 The present invention relates to a metal complex compound and an organic electroluminescent device containing the same.
これまでのところ、フェニルピリジン白金錯体やフェノキシピリジン白金錯体等の4座配位白金錯体(例えば特許文献1)、オクタエチルポルフィリン白金錯体等の4座配位白金錯体(例えば特許文献2、3)等の材料を含有する有機電界発光素子(以下、「有機EL素子」ともいう)が開示されているが、発光波長の短波化等の発光特性及び耐久性の点でさらなる改良が求められていた。
本発明の目的は、発光特性(発光波長、輝度、量子収率、駆動電圧等)及び耐久性が良好な有機電界発光素子の提供にある。 An object of the present invention is to provide an organic electroluminescence device having good light emission characteristics (emission wavelength, luminance, quantum yield, driving voltage, etc.) and durability.
この課題は下記手段によって達成された。
(1)一対の電極間に、発光層を有する有機化合物層を有する有機電界発光素子であって、下記一般式(I)で表される化合物の少なくとも一種を有機化合物層に含有する有機電界発光素子。
一般式(I)
This object has been achieved by the following means.
(1) An organic electroluminescence device having an organic compound layer having a light emitting layer between a pair of electrodes, wherein the organic compound layer contains at least one compound represented by the following general formula (I) in the organic compound layer element.
Formula (I)
式中、Z1、Z2、Z3、Z4、Z5、Z6、Z7及びZ8は、各々独立に炭素、窒素、酸素、硫黄、珪素から選択される原子を表す。Z1、Z2、Z3、Z4及びN原子、並びにZ5、Z6、Z7、Z8及びN原子から形成される5員環における原子間の結合は単結合又は二重結合を表す。Z1、Z2、Z3、Z4、Z5、Z6、Z7及びZ8が、さらに置換可能な場合、置換基を有していてもよい。A1は二価の連結基を表す。B1及びB2は、各々独立に単結合又は二価の連結基を表す。X1及びX2は白金原子と結合する原子を有する部分構造を表す。ただしX1及びX2が結合して環を形成することはない。
(2)前記一般式(I)が下記一般式(II)又は(III)で表されることを特徴とする上記(1)に記載の有機電界発光素子。
一般式(II)
In the formula, Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 and Z 8 each independently represents an atom selected from carbon, nitrogen, oxygen, sulfur and silicon. Bonds between atoms in a 5-membered ring formed from Z 1 , Z 2 , Z 3 , Z 4 and N atoms, and Z 5 , Z 6 , Z 7 , Z 8 and N atoms are single bonds or double bonds. To express. When Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 and Z 8 can be further substituted, they may have a substituent. A 1 represents a divalent linking group. B 1 and B 2 each independently represents a single bond or a divalent linking group. X 1 and X 2 each represents a partial structure having an atom bonded to a platinum atom. However, X 1 and X 2 are not bonded to form a ring.
(2) The organic electroluminescence device as described in (1) above, wherein the general formula (I) is represented by the following general formula (II) or (III).
Formula (II)
式中、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、B1、及びB2は、一般式(I)のそれらと同義である。Z11、Z12、Z13、Z14、Z15、Z16、Z17、Z18、Z19、及びZ20は、各々独立に炭素、窒素、酸素、硫黄、珪素から選択される原子を表し、さらに置換可能な場合、置換基を有していてもよい。Y1及びY2は各々独立に、酸素原子、硫黄原子、置換あるいは無置換の窒素原子、又は単結合を表す。
一般式(III)
In the formula, Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , B 1 , and B 2 are the same as those in the general formula (I). Z 11 , Z 12 , Z 13 , Z 14 , Z 15 , Z 16 , Z 17 , Z 18 , Z 19 , and Z 20 are each independently an atom selected from carbon, nitrogen, oxygen, sulfur, and silicon. In the case where it can be further substituted, it may have a substituent. Y 1 and Y 2 each independently represent an oxygen atom, a sulfur atom, a substituted or unsubstituted nitrogen atom, or a single bond.
Formula (III)
式中、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、B1、及びB2は一般式(I)のそれらと同義である。Z31、Z32、Z33、Z34、Z35、Z36、Z37、及びZ38は、各々独立に炭素、窒素、酸素、硫黄、珪素から選択される原子を表し、さらに置換可能な場合、置換基を有していてもよい。Y1及びY2は各々独立に、酸素原子、硫黄原子、置換あるいは無置換の窒素原子、又は単結合を表す。
(3)前記一般式(II)が下記一般式(IIA)で表されることを特徴とする上記(2)に記載の有機電界発光素子。
一般式(IIA)
In the formula, Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , B 1 , and B 2 are the same as those in the general formula (I). Z 31 , Z 32 , Z 33 , Z 34 , Z 35 , Z 36 , Z 37 , and Z 38 each independently represent an atom selected from carbon, nitrogen, oxygen, sulfur, and silicon, and can be further substituted In some cases, it may have a substituent. Y 1 and Y 2 each independently represent an oxygen atom, a sulfur atom, a substituted or unsubstituted nitrogen atom, or a single bond.
(3) The organic electroluminescent element as described in (2) above, wherein the general formula (II) is represented by the following general formula (IIA).
Formula (IIA)
式中、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、B1、B2、Y1及びY2は一般式(II)のそれらと同義である。R1、R2、R3、R4、R5、R6、R7及びR8は、各々独立に水素原子又は置換基を表す。
(4)前記一般式(IIA)が下記一般式(IIB)で表されることを特徴とする上記(3)に記載の有機電界発光素子。
一般式(IIB)
In the formula, Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , B 1 , B 2 , Y 1 and Y 2 are those of the general formula (II). It is synonymous. R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 each independently represents a hydrogen atom or a substituent.
(4) The organic electroluminescent element as described in (3) above, wherein the general formula (IIA) is represented by the following general formula (IIB).
Formula (IIB)
式中、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、Y1、Y2、R1、R2、R3、R4、R5、R6、R7及びR8は、一般式(IIA)のそれらと同義である。
(5)前記一般式(IIB)が下記一般式(IIB1)で表されることを特徴とする上記(4)に記載の有機電界発光素子。
一般式(IIB1)
In the formula, Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , Y 1 , Y 2 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are as defined in general formula (IIA).
(5) The organic electroluminescent element as described in (4) above, wherein the general formula (IIB) is represented by the following general formula (IIB1).
Formula (IIB1)
式中、A1、R1、R2、R3、R4、R5、R6、R7及びR8は、一般式(IIB)のそれらと同義である。R11、R12、R13及びR14は、各々独立に水素原子又は置換基を表す。
(6)前記一般式(IIB)が下記一般式(IIB2)で表されることを特徴とする上記(4)に記載の有機電界発光素子。
一般式(IIB2)
In the formula, A 1 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 have the same meanings as those in formula (IIB). R 11 , R 12 , R 13 and R 14 each independently represents a hydrogen atom or a substituent.
(6) The organic electroluminescent element as described in (4) above, wherein the general formula (IIB) is represented by the following general formula (IIB2).
Formula (IIB2)
式中、A1、R1、R2、R3、R4、R5、R6、R7及びR8は、一般式(IIB)のそれらと同義である。R11、R12、R13及びR14は、各々独立に水素原子又は置換基を表す。
(7)前記一般式(III)が下記一般式(IIIA)で表されることを特徴とする上記(2)に記載の有機電界発光素子。
一般式(IIIA)
In the formula, A 1 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 have the same meanings as those in formula (IIB). R 11 , R 12 , R 13 and R 14 each independently represents a hydrogen atom or a substituent.
(7) The organic electroluminescent element as described in (2) above, wherein the general formula (III) is represented by the following general formula (IIIA).
Formula (IIIA)
式中、Z1、Z2、Z3、Z5、Z6、Z7、A1、Z32、Z33、Z34、Z36、Z37、Z38、Y1及びY2は一般式(III)のそれらと同義である。
(8)R2及びR6がともに水素原子であることを特徴とする上記(3)〜(6)のいずれか一項に記載の有機電界発光素子。
(9)前記一般式(I)乃至一般式(IIIA)において、A1が−C(R25)(R26)−、−C(R27)(R28)C(R29)(R30)−、−Si(R31)(R32)−、−N(R35)−、−O−、−S−、−SO−、−SO2−、−CO−(R25、R26、R27、R28、R29、R30、R31、R32、及びR35はそれぞれ独立に水素原子又は置換基を表す。)から選択される基である上記(1)〜(8)のいずれか一項に記載の有機電界発光素子。
(10)一対の電極間に、発光層を含む有機化合物層を有する有機電界発光素子であって、下記一般式(IIB1)で表される化合物の少なくとも一種を有機化合物層に含有することを特徴とする有機電界発光素子。
一般式(IIB1)
(11)R 2 及びR 6 がともに水素原子であることを特徴とする上記(10)に記載の有機電界発光素子。
(12)A 1 が−C(R 25 )(R 26 )−又は−C(R 27 )(R 28 )C(R 29 )(R 30 )−(R 25 、R 26 、R 27 、R 28 、R 29 及びR 30 はそれぞれ独立に水素原子、アルキル基、又はアリール基を表す。)であることを特徴とする上記(10)又は(11)に記載の有機電界発光素子。
(13)前記R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、及びR 8 が、各々独立に水素原子、又はアルキル基、又はハロゲン原子を表し、R 11 、R 12 、R 13 及びR 14 が、各々独立に水素原子、又はアルキル基を表すことを特徴とする上記(10)〜(12)のいずれか一項に記載の有機電界発光素子。
(14)下記一般式(IIB1)で表される化合物。
一般式(IIB1)
(15)前記A 1 が、−C(R 25 )(R 26 )−又は−C(R 27 )(R 28 )C(R 29 )(R 30 )−(R 25 、R 26 、R 27 、R 28 、R 29 及びR 30 はそれぞれ独立に水素原子、アルキル基又はアリール基を表す。)であることを特徴とする上記(14)に記載の化合物。
(16)前記R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、及びR 8 が、各々独立に水素原子、又はアルキル基、又はハロゲン原子を表し、R 11 、R 12 、R 13 及びR 14 が、各々独立に水素原子、又はアルキル基を表すことを特徴とする上記(14)又は(15)に記載の化合物。
(17)上記(14)〜(16)のいずれか一項に記載の化合物を含む発光材料。
(18)上記(14)〜(16)のいずれか一項に記載の化合物を含む発光層。
(19)上記(10)〜(13)のいずれか一項に記載の有機電界発光素子を用いた表示素子。
(20)上記(10)〜(13)のいずれか一項に記載の有機電界発光素子を用いたディスプレイ。
(21)上記(10)〜(13)のいずれか一項に記載の有機電界発光素子を用いた照明光源。
なお、本発明は上記(10)〜(21)に関するものであるが、その他の事項についても参考のため記載した。
In the formula, Z 1 , Z 2 , Z 3 , Z 5 , Z 6 , Z 7 , A 1 , Z 32 , Z 33 , Z 34 , Z 36 , Z 37 , Z 38 , Y 1 and Y 2 are general formulas. It is synonymous with those of (III) .
( 8 ) The organic electroluminescent element as described in any one of (3) to (6) above, wherein both R 2 and R 6 are hydrogen atoms .
( 9 ) In the general formulas (I) to (IIIA), A 1 is —C (R 25 ) (R 26 ) —, —C (R 27 ) (R 28 ) C (R 29 ) (R 30 )-, -Si (R 31 ) (R 32 )-, -N (R 35 )-, -O-, -S-, -SO-, -SO 2- , -CO- (R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , R 31 , R 32 , and R 35 each independently represents a hydrogen atom or a substituent.) (1) to (8) above The organic electroluminescent element as described in any one.
(10) An organic electroluminescence device having an organic compound layer including a light emitting layer between a pair of electrodes, wherein the organic compound layer contains at least one compound represented by the following general formula (IIB1). An organic electroluminescent element.
Formula (IIB1)
(11) The organic electroluminescent element as described in (10) above, wherein both R 2 and R 6 are hydrogen atoms.
(12) A 1 is -C (R 25 ) (R 26 )-or -C (R 27 ) (R 28 ) C (R 29 ) (R 30 )-(R 25 , R 26 , R 27 , R 28 , R 29 and R 30 each independently represents a hydrogen atom, an alkyl group, or an aryl group.) The organic electroluminescent device as described in (10) or (11) above,
(13) R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 each independently represent a hydrogen atom, an alkyl group, or a halogen atom, and R 11 , R 12. R < 13> and R < 14 > respectively independently represent a hydrogen atom or an alkyl group, The organic electroluminescent element as described in any one of said (10)-(12) characterized by the above-mentioned.
(14) A compound represented by the following general formula (IIB1).
Formula (IIB1)
(15) A 1 is -C (R 25 ) (R 26 )-or -C (R 27 ) (R 28 ) C (R 29 ) (R 30 )-(R 25 , R 26 , R 27 , R 28 , R 29 and R 30 each independently represents a hydrogen atom, an alkyl group or an aryl group.) The compound as described in (14) above,
(16) R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 each independently represent a hydrogen atom, an alkyl group, or a halogen atom, and R 11 , R 12 , R 13 and R 14 each independently represent a hydrogen atom or an alkyl group, The compound according to (14) or (15) above,
(17) A luminescent material comprising the compound according to any one of (14) to (16) above.
(18) A light emitting layer containing the compound according to any one of (14) to (16).
(19) A display device using the organic electroluminescent device according to any one of (10) to (13).
(20) A display using the organic electroluminescent element according to any one of (10) to (13).
(21) An illumination light source using the organic electroluminescent element according to any one of (10) to (13).
The present invention relates to the above (10) to (21) , but other matters are also described for reference.
本発明にかかる特定の構造を有する白金錯体化合物を有機化合物層に含む有機電界発光素子は、発光特性(発光波長、輝度、量子収率、駆動電圧等)および耐久性に優れる。また、該白金錯体化合物は有機配位子を含む錯体であるために蒸着性に優れる。 An organic electroluminescence device comprising a platinum complex compound having a specific structure according to the present invention in an organic compound layer is excellent in emission characteristics (emission wavelength, luminance, quantum yield, driving voltage, etc.) and durability. Moreover, since this platinum complex compound is a complex containing an organic ligand, it is excellent in vapor deposition property.
本明細書において、一般式(I)、(II)、(III)、(IIA)、(IIB)、(IIB1)、(IIB2)及び(IIIA)(一般式(I)乃至一般式(IIIA)と同義である)で表される化合物は「本発明の化合物」と同義で用いる。また本発明の化合物を含有する有機化合物層を有する有機電界発光素子は「本発明の(発光)素子」と同義で用いる。本明細書において置換基群Aとは以下のように定義される。 In the present specification, general formulas (I), (II), (III), (IIA), (IIB), (IIB1), (IIB2) and (IIIA) (general formulas (I) to (IIIA) Are used synonymously with the “compound of the present invention”. Moreover, the organic electroluminescent element which has the organic compound layer containing the compound of this invention is used synonymously with "the (light-emitting) element of this invention." In this specification, the substituent group A is defined as follows.
(置換基群A)
アルキル基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜10であり、例えばメチル、エチル、iso−プロピル、tert−ブチル、n−オクチル、n−デシル、n−ヘキサデシルなどが挙げられる)、シクロアルキル基(好ましくは炭素数3〜30、より好ましくは炭素数3〜20、特に好ましくは炭素数3〜10であり、例えばシクロプロピル、シクロペンチル、シクロヘキシルなどが挙げられる。)、アルケニル基(好ましくは炭素数2〜30、より好ましくは炭素数2〜20、特に好ましくは炭素数2〜10であり、例えばビニル、アリル、2−ブテニル、3−ペンテニルなどが挙げられる。)、アルキニル基(好ましくは炭素数2〜30、より好ましくは炭素数2〜20、特に好ましくは炭素数2〜10であり、例えばプロパルギル、3−ペンチニルなどが挙げられる。)、アリール基(好ましくは炭素数6〜30、より好ましくは炭素数6〜20、特に好ましくは炭素数6〜12であり、例えばフェニル、p−メチルフェニル、ナフチル、アントラニルなどが挙げられる。)、アミノ基(好ましくは炭素数0〜30、より好ましくは炭素数0〜20、特に好ましくは炭素数0〜10であり、例えばアミノ、メチルアミノ、ジメチルアミノ、ジエチルアミノ、ジベンジルアミノ、ジフェニルアミノ、ジトリルアミノなどが挙げられる。)、アルコキシ基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜10であり、例えばメトキシ、エトキシ、ブトキシ、2−エチルヘキシロキシなどが挙げられる。)、アリールオキシ基(好ましくは炭素数6〜30、より好ましくは炭素数6〜20、特に好ましくは炭素数6〜12であり、例えばフェニルオキシ、1−ナフチルオキシ、2−ナフチルオキシなどが挙げられる。)、
(Substituent group A)
An alkyl group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 10 carbon atoms, such as methyl, ethyl, iso-propyl, tert-butyl, n-octyl, n- Decyl, n-hexadecyl, etc.), cycloalkyl groups (preferably having 3 to 30 carbon atoms, more preferably 3 to 20 carbon atoms, particularly preferably 3 to 10 carbon atoms, such as cyclopropyl, cyclopentyl, cyclohexyl). ), An alkenyl group (preferably having 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 2 to 10 carbon atoms, such as vinyl, allyl, 2-butenyl, 3-pentenyl. ), Alkynyl groups (preferably having 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferred) Has 2 to 10 carbon atoms, such as propargyl, 3-pentynyl, etc.), an aryl group (preferably 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms). For example, phenyl, p-methylphenyl, naphthyl, anthranyl, etc.), an amino group (preferably having 0 to 30 carbon atoms, more preferably 0 to 20 carbon atoms, and particularly preferably 0 to 10 carbon atoms). For example, amino, methylamino, dimethylamino, diethylamino, dibenzylamino, diphenylamino, ditolylamino, etc.), an alkoxy group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably Has 1 to 10 carbon atoms, such as methoxy, ethoxy, butoxy, 2-ethylhexyloxy An aryloxy group (preferably having 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, such as phenyloxy, 1-naphthyloxy, 2-naphthyl). Oxy, etc.)
ヘテロ環オキシ基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばピリジルオキシ、ピラジルオキシ、ピリミジルオキシ、キノリルオキシなどが挙げられる。)、アシル基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばアセチル、ベンゾイル、ホルミル、ピバロイルなどが挙げられる。)、アルコキシカルボニル基(好ましくは炭素数2〜30、より好ましくは炭素数2〜20、特に好ましくは炭素数2〜12であり、例えばメトキシカルボニル、エトキシカルボニルなどが挙げられる。)、アリールオキシカルボニル基(好ましくは炭素数7〜30、より好ましくは炭素数7〜20、特に好ましくは炭素数7〜12であり、例えばフェニルオキシカルボニルなどが挙げられる。)、アシルオキシ基(好ましくは炭素数2〜30、より好ましくは炭素数2〜20、特に好ましくは炭素数2〜10であり、例えばアセトキシ、ベンゾイルオキシなどが挙げられる。)、アシルアミノ基(好ましくは炭素数2〜30、より好ましくは炭素数2〜20、特に好ましくは炭素数2〜10であり、例えばアセチルアミノ、ベンゾイルアミノなどが挙げられる。)、アルコキシカルボニルアミノ基(好ましくは炭素数2〜30、より好ましくは炭素数2〜20、特に好ましくは炭素数2〜12であり、例えばメトキシカルボニルアミノなどが挙げられる。)、アリールオキシカルボニルアミノ基(好ましくは炭素数7〜30、より好ましくは炭素数7〜20、特に好ましくは炭素数7〜12であり、例えばフェニルオキシカルボニルアミノなどが挙げられる。)、 Heterocyclic oxy group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as pyridyloxy, pyrazyloxy, pyrimidyloxy, quinolyloxy, etc.), acyl A group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as acetyl, benzoyl, formyl, pivaloyl), an alkoxycarbonyl group (preferably Has 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 2 to 12 carbon atoms, and examples thereof include methoxycarbonyl, ethoxycarbonyl and the like, and an aryloxycarbonyl group (preferably 7 carbon atoms). To 30, more preferably 7 to 20 carbon atoms, particularly preferably 7 to 1 carbon atoms. Such as phenyloxycarbonyl), acyloxy groups (preferably having 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 2 to 10 carbon atoms, such as acetoxy, benzoyloxy An acylamino group (preferably having 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 2 to 10 carbon atoms, and examples thereof include acetylamino and benzoylamino). An alkoxycarbonylamino group (preferably having 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 2 to 12 carbon atoms such as methoxycarbonylamino), aryloxycarbonylamino group (Preferably 7 to 30 carbon atoms, more preferably 7 to 20 carbon atoms, particularly preferred. Ku is a C7-12, e.g., phenyloxycarbonylamino and the like.),
スルホニルアミノ基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばメタンスルホニルアミノ、ベンゼンスルホニルアミノなどが挙げられる。)、スルファモイル基(好ましくは炭素数0〜30、より好ましくは炭素数0〜20、特に好ましくは炭素数0〜12であり、例えばスルファモイル、メチルスルファモイル、ジメチルスルファモイル、フェニルスルファモイルなどが挙げられる。)、カルバモイル基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばカルバモイル、メチルカルバモイル、ジエチルカルバモイル、フェニルカルバモイルなどが挙げられる。)、アルキルチオ基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばメチルチオ、エチルチオなどが挙げられる。)、アリールチオ基(好ましくは炭素数6〜30、より好ましくは炭素数6〜20、特に好ましくは炭素数6〜12であり、例えばフェニルチオなどが挙げられる。)、ヘテロ環チオ基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばピリジルチオ、2−ベンズイミゾリルチオ、2−ベンズオキサゾリルチオ、2−ベンズチアゾリルチオなどが挙げられる。)、スルホニル基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばメシル、トシルなどが挙げられる。)、スルフィニル基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばメタンスルフィニル、ベンゼンスルフィニルなどが挙げられる。)、 A sulfonylamino group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as methanesulfonylamino, benzenesulfonylamino, etc.), a sulfamoyl group ( Preferably it is C0-30, More preferably, it is C0-20, Most preferably, it is C0-12, for example, sulfamoyl, methylsulfamoyl, dimethylsulfamoyl, phenylsulfamoyl etc. are mentioned. ), A carbamoyl group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, and examples thereof include carbamoyl, methylcarbamoyl, diethylcarbamoyl, phenylcarbamoyl and the like.) An alkylthio group (preferably having 1 to 30 carbon atoms) Preferably it is C1-C20, Most preferably, it is C1-C12, for example, methylthio, ethylthio etc. are mentioned, for example, An arylthio group (Preferably C6-C30, More preferably C6-C20, Particularly preferably, it has 6 to 12 carbon atoms, and examples thereof include phenylthio.), A heterocyclic thio group (preferably 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms) For example, pyridylthio, 2-benzimidazolylthio, 2-benzoxazolylthio, 2-benzthiazolylthio and the like, and a sulfonyl group (preferably having 1 to 30 carbon atoms, more preferably 1 carbon atom). -20, particularly preferably having 1 to 12 carbon atoms, such as mesyl and tosyl), sulfinyl group (preferably carbon 1-30, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as methane sulfinyl, and the like benzenesulfinyl.),
ウレイド基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばウレイド、メチルウレイド、フェニルウレイドなどが挙げられる。)、リン酸アミド基(好ましくは炭素数1〜30、より好ましくは炭素数1〜20、特に好ましくは炭素数1〜12であり、例えばジエチルリン酸アミド、フェニルリン酸アミドなどが挙げられる。)、ヒドロキシ基、メルカプト基、ハロゲン原子(例えばフッ素原子、塩素原子、臭素原子、ヨウ素原子であり、より好ましくはフッ素原子が挙げられる)、シアノ基、スルホ基、カルボキシル基、ニトロ基、ヒドロキサム酸基、スルフィノ基、ヒドラジノ基、イミノ基、ヘテロ環基(好ましくは炭素数1〜30、より好ましくは炭素数1〜12であり、ヘテロ原子としては、例えば窒素原子、酸素原子、硫黄原子が挙げられ、具体的には例えばイミダゾリル、ピリジル、キノリル、フリル、チエニル、ピペリジル、モルホリノ、ベンズオキサゾリル、ベンズイミダゾリル、ベンズチアゾリル、カルバゾリル基、アゼピニル基などが挙げられる。)、シリル基(好ましくは炭素数3〜40、より好ましくは炭素数3〜30、特に好ましくは炭素数3〜24であり、例えばトリメチルシリル、トリフェニルシリルなどが挙げられる。)、シリルオキシ基(好ましくは炭素数3〜40、より好ましくは炭素数3〜30、特に好ましくは炭素数3〜24であり、例えばトリメチルシリルオキシ、トリフェニルシリルオキシなどが挙げられる。)などが挙げられる。これらの置換基は更に置換されてもよい。 Ureido group (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, and examples thereof include ureido, methylureido, phenylureido), phosphoric acid amide group (Preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 12 carbon atoms, such as diethyl phosphoric acid amide and phenyl phosphoric acid amide), hydroxy group, mercapto Group, halogen atom (for example, fluorine atom, chlorine atom, bromine atom, iodine atom, more preferably fluorine atom), cyano group, sulfo group, carboxyl group, nitro group, hydroxamic acid group, sulfino group, hydrazino Group, imino group, heterocyclic group (preferably having 1 to 30 carbon atoms, more preferably 1 to 12 carbon atoms, Examples of the telo atom include a nitrogen atom, an oxygen atom, and a sulfur atom, specifically, for example, imidazolyl, pyridyl, quinolyl, furyl, thienyl, piperidyl, morpholino, benzoxazolyl, benzimidazolyl, benzthiazolyl, carbazolyl group, Azepinyl group, etc.), silyl groups (preferably having 3 to 40 carbon atoms, more preferably 3 to 30 carbon atoms, particularly preferably 3 to 24 carbon atoms, such as trimethylsilyl and triphenylsilyl). ), A silyloxy group (preferably having 3 to 40 carbon atoms, more preferably 3 to 30 carbon atoms, and particularly preferably 3 to 24 carbon atoms, such as trimethylsilyloxy, triphenylsilyloxy, etc.). Can be mentioned. These substituents may be further substituted.
一般式(I)について説明する。Z1、Z2、Z3、Z4、Z5、Z6、Z7及びZ8は、各々独立に、炭素、窒素、酸素、硫黄、珪素から選択される原子を表す。Z1、Z2、Z3、Z4及びN原子、並びにZ5、Z6、Z7、Z8及びN原子から形成される5員環における原子間の結合は、特に限定されないが、単結合、二重結合のいかなる組み合わせでもよい。Z1、Z2、Z3、Z4、Z5、Z6、Z7及びZ8は、好ましくは炭素又は窒素原子である。 The general formula (I) will be described. Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 and Z 8 each independently represents an atom selected from carbon, nitrogen, oxygen, sulfur and silicon. The bond between atoms in a 5-membered ring formed from Z 1 , Z 2 , Z 3 , Z 4 and N atoms, and Z 5 , Z 6 , Z 7 , Z 8 and N atoms is not particularly limited. Any combination of a bond and a double bond may be used. Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 and Z 8 are preferably carbon or nitrogen atoms.
一般式(I)において、Z1、Z2、Z3、Z4、Z5、Z6、Z7及びZ8は、さらに置換可能な場合、置換基群Aから選ばれる置換基を有していてもよい。その好ましい置換基としては、アルキル基、シクロアルキル基、アリール基、アミノ基、アルコキシ基、アリールオキシ基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、アシルオキシ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、ヘテロ環チオ基、スルホニル基、スルフィニル基、ウレイド基、リン酸アミド基、ヒドロキシ基、メルカプト基、ハロゲン原子、シアノ基、スルホ基、カルボキシル基、ニトロ基、スルフィノ基、ヘテロ環基、シリル基であり、より好ましくは、アルキル基、シクロアルキル基、アリール基、アミノ基、アルコキシ基、アリールオキシ基、ヘテロ環基であり、さらにこれらの基は、アルキル基、アルコキシ基、アミノ基で置換されていることが好ましい。 In the general formula (I), Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 and Z 8 have a substituent selected from the substituent group A when they can be further substituted. It may be. Preferred substituents include alkyl groups, cycloalkyl groups, aryl groups, amino groups, alkoxy groups, aryloxy groups, acyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, acyloxy groups, sulfonylamino groups, sulfamoyl groups, carbamoyl groups. Group, alkylthio group, arylthio group, heterocyclic thio group, sulfonyl group, sulfinyl group, ureido group, phosphoramido group, hydroxy group, mercapto group, halogen atom, cyano group, sulfo group, carboxyl group, nitro group, sulfino group A heterocyclic group and a silyl group, more preferably an alkyl group, a cycloalkyl group, an aryl group, an amino group, an alkoxy group, an aryloxy group, and a heterocyclic group, and these groups are an alkyl group, an alkoxy group, and an alkoxy group. Substituted with an amino group It is preferable.
一般式(I)において、A1は二価の連結基を表す。二価の連結基としては特に限定されないが、炭素原子、窒素原子、酸素原子、硫黄原子、ケイ素原子、ゲルマニウム原子、またはリン原子を含む二価の連結基が特に好ましく、下記の連結基群Aより選択される基が特に好ましい。
連結基群A
In the general formula (I), A 1 represents a divalent linking group. Although it does not specifically limit as a bivalent coupling group, The bivalent coupling group containing a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom, a silicon atom, a germanium atom, or a phosphorus atom is especially preferable, and the following coupling group group A More preferred groups are particularly preferred.
Linking group A
連結基群Aにおいて、R25、R26、R27、R28、R29、R30、R31、R32、R33、R34、R35及びR36(R25乃至R36)はそれぞれ独立に水素原子又は置換基を表す。R25乃至R36が置換基を表す場合、該置換基は置換基群Aから選ばれる置換基と同義である。R25乃至R36が置換可能な場合、さらに置換基を有していてもよく、R25とR26、R27とR28、R29とR30、R27とR29、R27とR30、R28とR30、R28とR29、R31とR32あるいはR33とR34がそれぞれ互いに結合し環を形成してもよい。 In the linking group A, R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , R 31 , R 32 , R 33 , R 34 , R 35 and R 36 (R 25 to R 36 ) are each Independently represents a hydrogen atom or a substituent. When R 25 to R 36 represent a substituent, the substituent has the same meaning as the substituent selected from the substituent group A. When R 25 to R 36 can be substituted, they may further have a substituent, R 25 and R 26 , R 27 and R 28 , R 29 and R 30 , R 27 and R 29 , R 27 and R 30 , R 28 and R 30 , R 28 and R 29 , R 31 and R 32 or R 33 and R 34 may be bonded to each other to form a ring.
A1は好ましくは水素原子又は連結基群Aより選択される置換基であり、このうち−C(R25)(R26)−、−C(R27)(R28)C(R29)(R30)−、−Si(R31)(R32)−、−N(R35)−、−O−、−S−、−SO−、−SO2−又は−CO−が好ましく、−C(R25)(R26)−、−C(R27)(R28)C(R29)(R30)−、−Si(R31)(R32)−、−O−、又は−S−がより好ましく、−C(R25)(R26)−、又は−C(R27)(R28)C(R29)(R30)−がさらに好ましい。 A 1 is preferably a hydrogen atom or a substituent selected from the linking group A, of which —C (R 25 ) (R 26 ) —, —C (R 27 ) (R 28 ) C (R 29 ) (R 30) -, - Si (R 31) (R 32) -, - N (R 35) -, - O -, - S -, - SO -, - SO 2 - or -CO- is preferable, - C (R 25) (R 26 ) -, - C (R 27) (R 28) C (R 29) (R 30) -, - Si (R 31) (R 32) -, - O-, or - S- is more preferable, and -C (R 25 ) (R 26 )-or -C (R 27 ) (R 28 ) C (R 29 ) (R 30 )-is more preferable.
前記C(R25)(R26)−において、R25及びR26は、好ましくは水素原子又は下記置換基群Bから選ばれる置換基である。 In C (R 25 ) (R 26 ) —, R 25 and R 26 are preferably a hydrogen atom or a substituent selected from the following substituent group B.
(置換基群B)
置換基群Bは、アルキル基、シクロアルキル基、アリール基、ハロゲン原子、アミノ基、アルキルチオ基、アリールチオ基、アルキルオキシ基、アリールオキシ基、ヒドロキシ基、メルカプト基であり、より好ましくはアルキル基、シクロアルキル基、アリール基、ハロゲン原子、アルキルチオ基、アリールチオ基、アルキルオキシ基、アリールオキシ基であり、さらに好ましくはアルキル基、アリール基である。
(Substituent group B)
Substituent group B is an alkyl group, cycloalkyl group, aryl group, halogen atom, amino group, alkylthio group, arylthio group, alkyloxy group, aryloxy group, hydroxy group, mercapto group, more preferably an alkyl group, A cycloalkyl group, an aryl group, a halogen atom, an alkylthio group, an arylthio group, an alkyloxy group, and an aryloxy group are preferable, and an alkyl group and an aryl group are more preferable.
前記−C(R27)(R28)C(R29)(R30)−において、R27、R28、R29及びR30は好ましくは水素原子又は置換基群Bから選ばれる置換基である。 In the —C (R 27 ) (R 28 ) C (R 29 ) (R 30 ) —, R 27 , R 28 , R 29 and R 30 are preferably a hydrogen atom or a substituent selected from the substituent group B. is there.
前記−Si(R31)(R32)−において、R31及びR32は好ましくは水素原子又は置換基群Bから選ばれる置換基である。 In the —Si (R 31 ) (R 32 ) —, R 31 and R 32 are preferably a hydrogen atom or a substituent selected from the substituent group B.
前記−Ge(R33)(R34)−において、R33及びR34は好ましくは水素原子又は置換基群Bから選ばれる置換基である。 In the —Ge (R 33 ) (R 34 ) —, R 33 and R 34 are preferably a hydrogen atom or a substituent selected from the substituent group B.
前記−N(R35)−において、R35は好ましくは水素原子又はアルキル基、シクロアルキル基、アリール基であり、より好ましくは、アルキル基、アリール基であり、さらに好ましくはアリール基である。 In the —N (R 35 ) —, R 35 is preferably a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group, more preferably an alkyl group or an aryl group, and still more preferably an aryl group.
前記−P(R36)−において、R36はR35の好ましい範囲と同義である。 In the above -P (R 36 )-, R 36 has the same meaning as the preferred range of R 35 .
一般式(I)において、B1、B2は各々独立に単結合又は二価の連結基を表す。連結基としては特に限定されないが、単結合、又は、炭素原子、窒素原子、酸素原子、硫黄原子、ケイ素原子、ゲルマニウム原子あるいはリン原子を含む二価の連結基が好ましく、単結合又は前記連結基群Aより選択される基がより好ましく、単結合、−C(R25)(R26)−、−C(R27)(R28)C(R29)(R30)−、−Si(R31)(R32)−、−N(R35)−、−O−、−S−、又は−CO−がさらに好ましく、単結合、−C(R25)(R26)−又は−O−が特に好ましい。B1が−C(R25)(R26)−、−C(R27)(R28)C(R29)(R30)−、−Si(R31)(R32)−、−Ge(R33)(R34)−、−N(R35)−及びP(R36)−を表す場合、その好ましい範囲は、前記A1で説明した好ましい範囲と同義である。 In the general formula (I), B 1 and B 2 each independently represents a single bond or a divalent linking group. The linking group is not particularly limited, but is preferably a single bond or a divalent linking group containing a carbon atom, nitrogen atom, oxygen atom, sulfur atom, silicon atom, germanium atom or phosphorus atom. A group selected from the group A is more preferable, and a single bond, —C (R 25 ) (R 26 ) —, —C (R 27 ) (R 28 ) C (R 29 ) (R 30 ) —, —Si ( R 31 ) (R 32 )-, -N (R 35 )-, -O-, -S-, or -CO- is more preferred, and a single bond, -C (R 25 ) (R 26 )-or -O -Is particularly preferred. B 1 is —C (R 25 ) (R 26 ) —, —C (R 27 ) (R 28 ) C (R 29 ) (R 30 ) —, —Si (R 31 ) (R 32 ) —, —Ge In the case of representing (R 33 ) (R 34 ) —, —N (R 35 ) — and P (R 36 ) —, the preferred range is the same as the preferred range described for A 1 above.
一般式(I)において、X1、X2は白金原子と結合する原子を有する部分構造を表す。X1の部分構造としては、炭素原子で結合する基、窒素原子で結合する基、珪素原子で結合する基、リン原子で結合する基、酸素原子で結合する基、硫黄原子で結合する基が好ましく、炭素原子、窒素原子、酸素原子、硫黄原子で結合する基がより好ましく、炭素原子あるいは酸素原子で結合する基が特に好ましい。ただしX1及びX2が結合して環を形成することはない。 In general formula (I), X < 1 >, X < 2 > represents the partial structure which has an atom couple | bonded with a platinum atom. The X 1 partial structure includes a group bonded by a carbon atom, a group bonded by a nitrogen atom, a group bonded by a silicon atom, a group bonded by a phosphorus atom, a group bonded by an oxygen atom, and a group bonded by a sulfur atom. A group bonded by a carbon atom, a nitrogen atom, an oxygen atom or a sulfur atom is more preferable, and a group bonded by a carbon atom or an oxygen atom is particularly preferable. However, X 1 and X 2 are not bonded to form a ring.
前記炭素原子で結合する基としては、炭素原子で結合する置換又は無置換のアリール基、炭素原子で結合する置換又は無置換の五員環へテロアリール基、炭素原子で結合する置換又は無置換の六員環へテロアリール基が好ましく、炭素原子で結合する置換又は無置換のアリール基、炭素原子で結合する置換又は無置換の含窒素五員環へテロアリール基、炭素原子で結合する含窒素六員環へテロアリール基がより好ましく、炭素原子で結合する置換アリール基が特に好ましい。 Examples of the group bonded by the carbon atom include a substituted or unsubstituted aryl group bonded by a carbon atom, a substituted or unsubstituted 5-membered heteroaryl group bonded by a carbon atom, and a substituted or unsubstituted bond bonded by a carbon atom. Preferred is a 6-membered heteroaryl group, a substituted or unsubstituted aryl group bonded at a carbon atom, a substituted or unsubstituted nitrogen-containing 5-membered heteroaryl group bonded at a carbon atom, a nitrogen-containing 6-membered bonded at a carbon atom A ring heteroaryl group is more preferred, and a substituted aryl group bonded with a carbon atom is particularly preferred.
前記酸素原子で結合する基としては、置換又は無置換の水酸基、置換又は無置換のカルボキシル基が好ましく、置換又は無置換のカルボキシル基がより好ましい。 The group bonded by the oxygen atom is preferably a substituted or unsubstituted hydroxyl group or a substituted or unsubstituted carboxyl group, and more preferably a substituted or unsubstituted carboxyl group.
前記窒素原子で結合する基としては、置換アミノ基、窒素原子で結合する含窒素五員環へテロアリール基が好ましく、窒素原子で結合する含窒素五員環へテロアリール基がより好ましく、置換カルバゾール、置換ピロール、置換インドールなどが特に好ましい。 The group bonded with the nitrogen atom is preferably a substituted amino group, a nitrogen-containing five-membered heteroaryl group bonded with a nitrogen atom, more preferably a nitrogen-containing five-membered heteroaryl group bonded with a nitrogen atom, a substituted carbazole, Substituted pyrrole, substituted indole and the like are particularly preferred.
前記リン原子で結合する基としては、置換ホスフィノ基が好ましい。珪素原子で結合する基としては、置換シリル基が好ましい。硫黄原子で結合する基としてはチオール基又は置換チオール基が好ましい。 The group bonded by the phosphorus atom is preferably a substituted phosphino group. As the group bonded by a silicon atom, a substituted silyl group is preferable. As the group bonded with a sulfur atom, a thiol group or a substituted thiol group is preferable.
一般式(I)は好ましくは一般式(II)または(III)で表わされる。
以下、一般式(II)について説明する。一般式(II)において、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、B1、及びB2は一般式(I)のそれらと同義である。Z11、Z12、Z13、Z14、Z15、Z16、Z17、Z18、Z19、及びZ20(Z11乃至Z20)は、各々独立に炭素、窒素、酸素、硫黄、珪素から選択される原子を表し、炭素又は窒素原子が好ましく、炭素原子がより好ましく、Z11乃至Z20全てが炭素原子であること((無)置換ベンゼン環)がさらに好ましい。Z11乃至Z20はさらに置換可能な場合置換基を有していてもよい。Y1及びY2は各々独立に、酸素原子、硫黄原子、置換あるいは無置換の窒素原子、又は単結合を表し、好ましくは酸素原子又は硫黄原子であり、さらに好ましくは酸素原子である。Y1及びY2が置換の窒素原子を表す場合、その置換基の例としては、置換基群Aから選ばれる置換基が好ましく、アルキル基、シクロアルキル基、アリール基がより好ましく、炭素数1〜7のアルキル基又は炭素数6〜12(環員数1〜2)のアリール基がさらに好ましい。
The general formula (I) is preferably represented by the general formula (II) or (III).
Hereinafter, the general formula (II) will be described. In the general formula (II), Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , B 1 , and B 2 are the same as those in the general formula (I). It is. Z 11 , Z 12 , Z 13 , Z 14 , Z 15 , Z 16 , Z 17 , Z 18 , Z 19 , and Z 20 (Z 11 to Z 20 ) are each independently carbon, nitrogen, oxygen, sulfur, It represents an atom selected from silicon, preferably a carbon or nitrogen atom, more preferably a carbon atom, and still more preferably all of Z 11 to Z 20 are carbon atoms ((unsubstituted) benzene ring). Z 11 to Z 20 may further have a substituent when substitutable. Y 1 and Y 2 each independently represent an oxygen atom, a sulfur atom, a substituted or unsubstituted nitrogen atom, or a single bond, preferably an oxygen atom or a sulfur atom, and more preferably an oxygen atom. When Y 1 and Y 2 represent a substituted nitrogen atom, examples of the substituent are preferably a substituent selected from Substituent Group A, more preferably an alkyl group, a cycloalkyl group, and an aryl group, and a carbon number of 1 An alkyl group having 7 to 7 carbon atoms or an aryl group having 6 to 12 carbon atoms (1 to 2 ring members) is more preferable.
次に、一般式(III)について説明する。一般式(III)において、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、B1、及びB2は一般式(I)のそれらと同義である。Z31、Z32、Z33、Z34、Z35、Z36、Z37、及びZ38(Z31乃至Z38)は、各々独立に炭素、窒素、酸素、硫黄、珪素から選択される原子を表し、炭素、窒素、又は硫黄原子が好ましく、炭素又は窒素原子がより好ましい。Z31乃至Z38は、さらに置換可能な場合置換基を有していてもよく、その置換基の例としては、置換基群Aから選ばれる置換基である。Y1及びY2は各々独立に、酸素原子、硫黄原子、置換あるいは無置換の窒素原子、又は単結合を表し、一般式(II)におけるY1及びY2と同義である。 Next, general formula (III) is demonstrated. In the general formula (III), Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , B 1 , and B 2 are the same as those in the general formula (I). It is. Z 31 , Z 32 , Z 33 , Z 34 , Z 35 , Z 36 , Z 37 , and Z 38 (Z 31 to Z 38 ) are each independently an atom selected from carbon, nitrogen, oxygen, sulfur, and silicon. Represents a carbon, nitrogen or sulfur atom, more preferably a carbon or nitrogen atom. Z 31 to Z 38 may further have a substituent when substitutable, and examples of the substituent are substituents selected from the substituent group A. Y 1 and Y 2 each independently represent an oxygen atom, a sulfur atom, a substituted or unsubstituted nitrogen atom, or a single bond, and have the same meanings as Y 1 and Y 2 in formula (II).
一般式(II)は好ましくは一般式(IIA)で表わされる。
以下、一般式(IIA)について説明する。一般式(IIA)において、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、B1、B2、Y1及びY2は一般式(II)のそれらと同義である。R1、R2、R3、R4、R5、R6、R7及びR8(R1乃至R8)は、各々独立に水素原子又は置換基を表す。該置換基は置換基群Aから選ばれる置換基と同義である。R1乃至R8の好ましい基としては、水素原子、アルキル基、シクロアルキル基、アリール基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、アシルオキシ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、ヘテロ環チオ基、スルホニル基、スルフィニル基、ウレイド基、リン酸アミド基、ヒドロキシ基、メルカプト基、ハロゲン原子、シアノ基、スルホ基、カルボキシル基、ニトロ基、スルフィノ基、ヘテロ環基、シリル基であり、より好ましくは水素原子、アルキル基、アリール基、スルホニル基、ハロゲン原子、シアノ基、ニトロ基、ヘテロ環基であり、最も好ましくは水素原子、アルキル基、アリール基、ハロゲン原子、シアノ基である。R1乃至R8がさらに置換可能である場合、置換基を有していてもよい。同一ベンゼン環上にある、R1とR2、R2とR3、R3とR4、R1とR3、R2とR4、R1とR4、R5とR6、R6とR7、R7とR8、R5とR7、R6とR8、及びR5とR8は互いに結合して環を形成してもよい。R2及びR6が共に水素原子であることが好ましい。特に、Y1またはY2が単結合の場合、R2及びR6が共に水素原子であることが好ましい。
The general formula (II) is preferably represented by the general formula (IIA).
Hereinafter, general formula (IIA) is demonstrated. In the general formula (IIA), Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , B 1 , B 2 , Y 1 and Y 2 represent the general formula (II ). R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 (R 1 to R 8 ) each independently represent a hydrogen atom or a substituent. This substituent is synonymous with the substituent selected from the substituent group A. Preferred groups of R 1 to R 8 include hydrogen atom, alkyl group, cycloalkyl group, aryl group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, acyloxy group, sulfonylamino group, sulfamoyl group, carbamoyl group, alkylthio group. Group, arylthio group, heterocyclic thio group, sulfonyl group, sulfinyl group, ureido group, phosphoric acid amide group, hydroxy group, mercapto group, halogen atom, cyano group, sulfo group, carboxyl group, nitro group, sulfino group, heterocyclic ring Group, silyl group, more preferably hydrogen atom, alkyl group, aryl group, sulfonyl group, halogen atom, cyano group, nitro group, heterocyclic group, most preferably hydrogen atom, alkyl group, aryl group, halogen An atom or a cyano group. When R 1 to R 8 can be further substituted, they may have a substituent. R 1 and R 2 , R 2 and R 3 , R 3 and R 4 , R 1 and R 3 , R 2 and R 4 , R 1 and R 4 , R 5 and R 6 , R on the same benzene ring 6 and R 7 , R 7 and R 8 , R 5 and R 7 , R 6 and R 8 , and R 5 and R 8 may be bonded to each other to form a ring. R 2 and R 6 are preferably both hydrogen atoms. In particular, when Y 1 or Y 2 is a single bond, it is preferable that both R 2 and R 6 are hydrogen atoms.
一般式(IIA)は好ましくは一般式(IIB)で表わされる。
以下、一般式(IIB)について説明する。一般式(IIB)において、Z1、Z2、Z3、Z4、Z5、Z6、Z7、Z8、A1、Y1、Y2、R1、R2、R3、R4、R5、R6、R7及びR8は、一般式(IIA)のそれらと同義である。
The general formula (IIA) is preferably represented by the general formula (IIB).
Hereinafter, general formula (IIB) is demonstrated. In the general formula (IIB), Z 1 , Z 2 , Z 3 , Z 4 , Z 5 , Z 6 , Z 7 , Z 8 , A 1 , Y 1 , Y 2 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are as defined in general formula (IIA).
一般式(IIB)は好ましくは一般式(IIB1)又は(IIB2)で表わされる。
以下、一般式(IIB1)について説明する。一般式(IIB1)において、A1、R1、R2、R3、R4、R5、R6、R7及びR8は、一般式(IIB)のそれらと同義である。R11、R12、R13及びR14(R11乃至R14)は、各々独立に水素原子又は置換基を表す。該置換基は置換基群Aから選ばれる置換基と同義である。R11乃至R14の好ましい基としては、水素原子、アルキル基、シクロアルキル基、アリール基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、アシルオキシ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、ヘテロ環チオ基、スルホニル基、スルフィニル基、ウレイド基、リン酸アミド基、ヒドロキシ基、メルカプト基、ハロゲン原子、シアノ基、スルホ基、カルボキシル基、ニトロ基、スルフィノ基、ヘテロ環基、シリル基であり、より好ましくは水素原子、アルキル基、シクロアルキル基、アリール基、ハロゲン原子、シアノ基であり、さらに好ましくは水素原子、アルキル基、アリール基である。R11乃至R14がさらに置換可能である場合、置換基を有していてもよい。
The general formula (IIB) is preferably represented by the general formula (IIB1) or (IIB2).
Hereinafter, general formula (IIB1) is demonstrated. In the general formula (IIB1), A 1 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 have the same meanings as those in the general formula (IIB). R 11 , R 12 , R 13 and R 14 (R 11 to R 14 ) each independently represent a hydrogen atom or a substituent. This substituent is synonymous with the substituent selected from the substituent group A. Preferred examples of R 11 to R 14 include a hydrogen atom, alkyl group, cycloalkyl group, aryl group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, acyloxy group, sulfonylamino group, sulfamoyl group, carbamoyl group, alkylthio group. Group, arylthio group, heterocyclic thio group, sulfonyl group, sulfinyl group, ureido group, phosphoric acid amide group, hydroxy group, mercapto group, halogen atom, cyano group, sulfo group, carboxyl group, nitro group, sulfino group, heterocyclic ring And a silyl group, more preferably a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, a halogen atom and a cyano group, and still more preferably a hydrogen atom, an alkyl group and an aryl group. When R 11 to R 14 can be further substituted, they may have a substituent.
次に、一般式(IIB2)について説明する。一般式(IIB2)において、A1、R1、R2、R3、R4、R5、R6、R7、R8は一般式(IIB)のそれらと同義であり、R11、R12、R13及びR14は、一般式(IIB1)のそれらと同義である。 Next, general formula (IIB2) is demonstrated. In the general formula (IIB2), A 1 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 have the same meanings as those in the general formula (IIB), and R 11 , R 12 , R 13 and R 14 have the same meanings as those in formula (IIB1).
一般式(III)は好ましくは一般式(IIIA)で表わされる。
以下、一般式(IIIA)について説明する。一般式(IIIA)において、Z1 、Z2、Z3、Z5、Z6、Z7、A1、Z32、Z33、Z34、Z36、Z37、Z38、Y1及びY2は一般式(III)のそれらと同義である。
The general formula (III) is preferably represented by the general formula (IIIA).
Hereinafter, general formula (IIIA) is demonstrated. In the general formula (IIIA), Z 1 , Z 2 , Z 3 , Z 5 , Z 6 , Z 7 , A 1 , Z 32 , Z 33 , Z 34 , Z 36 , Z 37 , Z 38 , Y 1 and Y 2 is synonymous with those of the general formula (III).
本発明の化合物は、低分子化合物であっても良く、また、オリゴマー化合物、ポリマー化合物(重量平均分子量(ポリスチレン換算)は好ましくは1000〜5000000、より好ましくは2000〜1000000、さらに好ましくは3000〜100000である。)であっても良い。オリゴマー化合物又はポリマー化合物の場合、一般式で表される構造がポリマー主鎖中に含まれても良く、またポリマー側鎖に含まれていても良い。該ポリマー化合物はホモポリマー化合物であっても良く、共重合体であっても良い。本発明の化合物は低分子化合物が好ましい。 The compound of the present invention may be a low molecular compound, and is an oligomeric compound or a polymer compound (weight average molecular weight (polystyrene conversion) is preferably 1000 to 5000000, more preferably 2000 to 1000000, still more preferably 3000 to 100000. It may be. In the case of an oligomer compound or a polymer compound, the structure represented by the general formula may be included in the polymer main chain, or may be included in the polymer side chain. The polymer compound may be a homopolymer compound or a copolymer. The compound of the present invention is preferably a low molecular compound.
本発明の化合物の具体例を示すが本発明はこれらに限定されない。 Although the specific example of the compound of this invention is shown, this invention is not limited to these.
<本発明の化合物の合成方法>
本発明の化合物は種々の手法で合成することができる。例えば、配位子、又はその解離体と白金イオンを含有する化合物を溶媒(例えば、ハロゲン系溶媒、アルコール系溶媒、エーテル系溶媒、エステル系溶媒、ケトン系溶媒、ニトリル系溶媒、アミド系溶媒、スルホン系溶媒、スルホキサイド系溶媒、水などが挙げられる)の存在下、又は溶媒非存在下、塩基の存在下(無機、有機の種々の塩基、例えば、ナトリウムメトキサイド、t−ブトキシカリウム、トリエチルアミン、炭酸カリウムなどが挙げられる)、もしくは、塩基非存在下、室温以下、もしくは加熱し(通常の加熱以外にも、マントルヒーターを使用する方法、マイクロウェーブで加熱する手法なども有効である)得ることができる。
<Method for Synthesizing Compound of the Present Invention>
The compound of the present invention can be synthesized by various methods. For example, a ligand or a compound containing a dissociated product thereof and platinum ion is used as a solvent (for example, a halogen solvent, an alcohol solvent, an ether solvent, an ester solvent, a ketone solvent, a nitrile solvent, an amide solvent, In the presence of a sulfone solvent, a sulfoxide solvent, water, etc.) or in the absence of a solvent, in the presence of a base (inorganic or organic various bases such as sodium methoxide, t-butoxy potassium, triethylamine, Potassium carbonate, etc.), or below room temperature in the absence of a base, or heated (in addition to normal heating, a method using a mantle heater, a method of heating with a microwave, etc. is also effective) Can do.
本発明の化合物は、例えば、Synthesis, 5, 409−411,(1986)に記載の方法等を参照として対応するジカルボニル化合物とヒドラジン水和物と反応させることでフェニルピラゾール体を合成し、さらにハロゲン化アルキルあるいはホスゲン等と反応せしめることにより、対応する配位子を合成したのち、得られた有機配位子を前述したような適当な白金源を前述したような溶媒下で反応せしめることにより合成することができるが、ここで挙げた方法に限定されるものではない。 The compound of the present invention can be synthesized, for example, by reacting a corresponding dicarbonyl compound with hydrazine hydrate with reference to the method described in Synthesis, 5, 409-411, (1986), By synthesizing the corresponding ligand by reacting with an alkyl halide or phosgene, and then reacting the obtained organic ligand with an appropriate platinum source as described above in a solvent as described above. Although it can synthesize | combine, it is not limited to the method quoted here.
本発明の化合物を合成する際の反応時間は反応の活性により異なり、特に限定されないが、1分以上5日以下が好ましく、5分以上3日以下がより好ましく、10分以上24時間以下がさらに好ましい。 The reaction time for synthesizing the compound of the present invention varies depending on the activity of the reaction and is not particularly limited, but is preferably 1 minute to 5 days, more preferably 5 minutes to 3 days, and more preferably 10 minutes to 24 hours. preferable.
本発明の化合物を合成する際の反応温度は反応の活性により異なり、特に限定されないが、0℃以上300℃以下が好ましく、5℃以上250℃以下がより好ましく、10℃以上200℃以下がさらに好ましい。 The reaction temperature for synthesizing the compound of the present invention varies depending on the activity of the reaction and is not particularly limited, but is preferably 0 ° C. or higher and 300 ° C. or lower, more preferably 5 ° C. or higher and 250 ° C. or lower, and more preferably 10 ° C. or higher and 200 ° C. or lower. preferable.
本発明の化合物、目的とする錯体の部分構造を形成している配位子を白金化合物に対し、好ましくは0.1当量〜10当量、より好ましくは0.3当量〜6当量、さらに好ましくは0.5当量〜4当量加えて合成することができる。前記の白金化合物としては、ハロゲン化物(例えば、塩化白金、塩化白金酸カリウム等)、カルボン酸塩類(例えば、酢酸白金等)、ジケトナート類(例えば、白金アセチルアセトナート等)、有機配位子を含有する白金化合物(例えばジクロロシクロオクタジエニル白金等)又はそれらの水和物などがあげられる。 The compound of the present invention and the ligand forming the partial structure of the target complex are preferably 0.1 equivalents to 10 equivalents, more preferably 0.3 equivalents to 6 equivalents, still more preferably, relative to the platinum compound. It can be synthesized by adding 0.5 equivalent to 4 equivalents. Examples of the platinum compound include halides (for example, platinum chloride, potassium chloroplatinate), carboxylates (for example, platinum acetate), diketonates (for example, platinum acetylacetonate), and organic ligands. Examples thereof include platinum compounds (such as dichlorocyclooctadienyl platinum) or hydrates thereof.
次に、本発明の前記一般式(I)で表される化合物のうち、例示化合物(1)、(101)、(102)および(114)の具体的な合成例を示すが、この方法に限定されるものではない。 Next, specific synthesis examples of exemplary compounds (1), (101), (102) and (114) among the compounds represented by the general formula (I) of the present invention will be shown. It is not limited.
<本発明の例示化合物(1)の合成>
窒素雰囲気下、100mLの三口フラスコに、3,3−ジメチル−2,4−ペンタンジオン(A)10g(78mmol)、ジメチルホルムアミド−ジメチルアセタール27.6mL、ジメチルホルムアミド60mLを仕込み、18時間、150℃で反応させた。反応液を減圧下で、濃縮した後、残渣をシリカゲルクロマトグラフィー(展開液:酢酸エチル/メタノール=9/1)で精製し、化合物(B)を4.83g得た(収率26%)。
1H−NMR(400MHz,in CDCl3):δ(ppm)=7.57(d,J=12.6Hz,2H),5.05(d,J=12.6Hz,2H),3.01(broad s,6H),2.78(broad s,6H),1.32(s,6H).
<Synthesis of Exemplary Compound (1) of the Present Invention>
Under a nitrogen atmosphere, a 100 mL three-necked flask was charged with 10 g (78 mmol) of 3,3-dimethyl-2,4-pentanedione (A), 27.6 mL of dimethylformamide-dimethylacetal, and 60 mL of dimethylformamide for 18 hours at 150 ° C. It was made to react with. After the reaction solution was concentrated under reduced pressure, the residue was purified by silica gel chromatography (developing solution: ethyl acetate / methanol = 9/1) to obtain 4.83 g of Compound (B) (yield 26%).
1 H-NMR (400 MHz, in CDCl 3 ): δ (ppm) = 7.57 (d, J = 12.6 Hz, 2H), 5.05 (d, J = 12.6 Hz, 2H), 3.01 (Broad s, 6H), 2.78 (broad s, 6H), 1.32 (s, 6H).
窒素雰囲気下、300mLの三口フラスコに、化合物(B)2.70g(21.0mmol)、ヒドラジン一水和物1.19g(23.8mmol)、エタノール200mLを仕込み、7時間加熱還流させた。反応液を濃縮し、残渣をシリカゲルクロマトグラフィー(展開液:酢酸エチル/エタノール=8/2)で精製し、化合物(C)を1.77g得た(収率89%)。
1H−NMR(400MHz,in CDCl3):δ(ppm)=7.49(d,J=2.1Hz,2H),6.19(d,J=2.1Hz,2H),1.74(s,6H).
Under a nitrogen atmosphere, a 300 mL three-necked flask was charged with 2.70 g (21.0 mmol) of Compound (B), 1.19 g (23.8 mmol) of hydrazine monohydrate, and 200 mL of ethanol, and heated to reflux for 7 hours. The reaction solution was concentrated, and the residue was purified by silica gel chromatography (developing solution: ethyl acetate / ethanol = 8/2) to obtain 1.77 g of compound (C) (yield 89%).
1 H-NMR (400 MHz, in CDCl 3 ): δ (ppm) = 7.49 (d, J = 2.1 Hz, 2H), 6.19 (d, J = 2.1 Hz, 2H), 1.74 (S, 6H).
窒素雰囲気下、200mLの三口フラスコに、化合物(C)1.00g(4.20mmol)、ヨードベンゼン11.57g(56.4mmol)、酸化銅81.1mg(0.567mmol)、サリチルアルドキシム311mg(2.27mmol)、炭酸セシウム7.39g(38.3mmol)、ブチロニトリル100mLを仕込み、140℃で16時間反応させた。反応液を濾過し、濃縮した。得られた残渣をシリカゲルクロマトグラフィー(展開液:ヘキサン/酢酸エチル=10/1)で精製し、化合物(D)を1.43g得た(収率77%)。
1H−NMR(400MHz,in CDCl3):δ(ppm)=7.80(d,J=2.7Hz,2H),7.71−7.68(m,4H),7.45−7.39(m,4H),7.25−7.20(m,2H),6.32(d,J=2.4Hz,2H),1.85(s,6H).
In a 200 mL three-necked flask under a nitrogen atmosphere, 1.00 g (4.20 mmol) of compound (C), 11.57 g (56.4 mmol) of iodobenzene, 81.1 mg (0.567 mmol) of copper oxide, 311 mg of salicylaldoxime ( 2.27 mmol), 7.39 g (38.3 mmol) of cesium carbonate, and 100 mL of butyronitrile were charged and reacted at 140 ° C. for 16 hours. The reaction was filtered and concentrated. The obtained residue was purified by silica gel chromatography (developing solution: hexane / ethyl acetate = 10/1) to obtain 1.43 g of Compound (D) (yield 77%).
1 H-NMR (400 MHz, in CDCl 3 ): δ (ppm) = 7.80 (d, J = 2.7 Hz, 2H), 7.71-7.68 (m, 4H), 7.45-7 .39 (m, 4H), 7.25-7.20 (m, 2H), 6.32 (d, J = 2.4 Hz, 2H), 1.85 (s, 6H).
窒素雰囲気下、50mLのナスフラスコに、化合物(D)50mg(0.152mmol)、塩化第一白金40.5mg(0.152mmol)、ベンゾニトリル3mLを仕込み、200℃で5時間、加熱した。室温まで冷却後、反応液にヘキサン40mLを加え、析出した茶褐色の固体をシリカゲルクロマトグラフィー(展開液:クロロホルム)で精製し、本発明の例示化合物(1)を17.6mg得た。収率22%。本発明の例示化合物(1)は、ジクロロメタン溶液において、室温下で460nmに発光した。
1H−NMR(400MHz,in CDCl3):δ(ppm)= 8.15(dd,J=1.2,7.2Hz,3JPt-H=56.8Hz,2H),7.95(d,J=2.8Hz,2H),7.33(dd,J=1.2,7.6Hz,2H),7.24−7.14(m,4H),6.59(d,J=2.4Hz,2H),1.80(s,6H).
Under a nitrogen atmosphere, a 50 mL eggplant flask was charged with 50 mg (0.152 mmol) of compound (D), 40.5 mg (0.152 mmol) of platinum chloride and 3 mL of benzonitrile, and heated at 200 ° C. for 5 hours. After cooling to room temperature, 40 mL of hexane was added to the reaction solution, and the precipitated brown solid was purified by silica gel chromatography (developing solution: chloroform) to obtain 17.6 mg of Exemplified Compound (1) of the present invention. Yield 22%. The exemplary compound (1) of the present invention emitted light at 460 nm in a dichloromethane solution at room temperature.
1 H-NMR (400 MHz, in CDCl 3 ): δ (ppm) = 8.15 (dd, J = 1.2, 7.2 Hz, 3 J Pt-H = 56.8 Hz, 2H), 7.95 ( d, J = 2.8 Hz, 2H), 7.33 (dd, J = 1.2, 7.6 Hz, 2H), 7.24-7.14 (m, 4H), 6.59 (d, J = 2.4 Hz, 2H), 1.80 (s, 6H).
<本発明の例示化合物(101)の合成>
窒素雰囲気下、200mLの3ツ口フラスコに、化合物(C)0.30g(1.70 mmol)、3−ヨードベンゾトリフルオリド4.63g(17.0 mmol)、酸化銅24mg(0.17 mmol)、サリチルアルドキシム93mg(0.11 mmol)、炭酸セシウム2.21g(11.5 mmol)、ブチロニトリル20mLを仕込み、140℃で18時間反応させた。反応終了後、反応液を濾過し、濃縮した。得られた残渣をシリカゲルクロマトグラフィー(展開液:ヘキサン/酢酸エチル=5/1)で精製し、化合物(E)を635mg得た(収率80%)。
1H-NMR (400 MHz in CDCl3):δ(ppm)=7.97 (brs, 2H), 7.90-7.84 (m, 4H), 7.58-7.46 (m, 4H), 6.37(d, J = 2.4 Hz, 2H), 1.85 (s, 6H).
<Synthesis of Exemplary Compound (101) of the Present Invention>
In a 200 mL three-necked flask under nitrogen atmosphere, 0.30 g (1.70 mmol) of compound (C), 4.63 g (17.0 mmol) of 3-iodobenzotrifluoride, 24 mg (0.17 mmol) of copper oxide, 93 mg of salicylaldoxime. (0.11 mmol), 2.21 g (11.5 mmol) of cesium carbonate, and 20 mL of butyronitrile were charged and reacted at 140 ° C. for 18 hours. After completion of the reaction, the reaction solution was filtered and concentrated. The obtained residue was purified by silica gel chromatography (developing solution: hexane / ethyl acetate = 5/1) to obtain 635 mg of compound (E) (yield 80%).
1 H-NMR (400 MHz in CDCl 3 ): δ (ppm) = 7.97 (brs, 2H), 7.90-7.84 (m, 4H), 7.58-7.46 (m, 4H), 6.37 (d, J = 2.4 Hz , 2H), 1.85 (s, 6H).
窒素雰囲気下、50mLのナスフラスコに、化合物(E)50mg(0.11 mmol)、塩化白金(II)ベンゾニトリル錯体50.5mg(0.11 mmol)、ベンゾニトリル3mLを仕込み、200℃で9時間、加熱した。室温まで冷却後、減圧下で濃縮し、残渣をシリカゲルクロマトグラフィー(展開液:クロロホルム)で精製した。得られた粗結晶をメタノールから再結晶して、本発明の例示化合物(101)4mgを白色紛体として得た(収率5.6%)。本発明の例示化合物(101)はジクロロメタン溶液において、室温下で453nmに弱く発光した。
1H-NMR(400 MHz in CDCl3):δ(ppm)=8.20 (d, J = 8.0 Hz, 3JPt-H=54.8 Hz, 2H), 8.04 (d, J = 2.8 Hz, 2H), 7.55-7.23 (m, 4H), 6.68 (d, J = 2.4 Hz, 2H), 1.80 (s, 6H).
Under a nitrogen atmosphere, a 50 mL eggplant flask was charged with 50 mg (0.11 mmol) of compound (E), 50.5 mg (0.11 mmol) of platinum (II) chloride benzonitrile complex, and 3 mL of benzonitrile, and heated at 200 ° C. for 9 hours. . After cooling to room temperature, the mixture was concentrated under reduced pressure, and the residue was purified by silica gel chromatography (developing solution: chloroform). The obtained crude crystals were recrystallized from methanol to obtain 4 mg of the exemplary compound (101) of the present invention as a white powder (yield 5.6%). The exemplary compound (101) of the present invention emitted weak light at 453 nm in a dichloromethane solution at room temperature.
1 H-NMR (400 MHz in CDCl 3 ): δ (ppm) = 8.20 (d, J = 8.0 Hz, 3 J Pt-H = 54.8 Hz, 2H), 8.04 (d, J = 2.8 Hz, 2H), 7.55-7.23 (m, 4H), 6.68 (d, J = 2.4 Hz, 2H), 1.80 (s, 6H).
<本発明の化合物(102)の合成>
窒素気流下、化合物(C)1.0g(5.7 mmol)、m-ヨウドベンゾニトリル12.8g(55.9 mmol)、酸化第一銅80mg(0.56 mmol)、サリチルアルドキシム0.30g(2.2 mmol)、炭酸セシウム7.16g(37.1 mmol)をn−ブチロニトリル100mlに懸濁させ、撹拌しながら還流させた。加熱下で17.5時間撹拌したのち、室温まで冷却した。不溶部をセライトろ過で除き、濾液の溶媒を留去した。シリカゲルカラム(ヘキサン:酢酸エチル=4:1)で精製することにより化合物(F)を結晶として1.6g(収率75%)得た。
1H-NMR(400 MHz in CDCl3)400MHz:δ 1.84 (s,6H), 6.39 (d, J = 2.4Hz, 2H), 7.48−7.56 (m,4H), 7.84 (d, J= 2.8Hz,2H), 7.91 (dt, J = 2.0 and 7.6 Hz,2H), 8.05 (br, 2H).
<Synthesis of Compound (102) of the Present Invention>
Under nitrogen stream, compound (C) 1.0 g (5.7 mmol), m-iodobenzonitrile 12.8 g (55.9 mmol), cuprous oxide 80 mg (0.56 mmol), salicylaldoxime 0.30 g (2.2 mmol), 7.16 g (37.1 mmol) of cesium carbonate was suspended in 100 ml of n-butyronitrile and refluxed with stirring. After stirring for 17.5 hours under heating, the mixture was cooled to room temperature. The insoluble part was removed by Celite filtration, and the solvent of the filtrate was distilled off. Purification by a silica gel column (hexane: ethyl acetate = 4: 1) yielded 1.6 g (yield 75%) of compound (F) as crystals.
1 H-NMR (400 MHz in CDCl 3 ) 400 MHz: δ 1.84 (s, 6H), 6.39 (d, J = 2.4Hz, 2H), 7.48-7.56 (m, 4H), 7.84 (d, J = 2.8Hz , 2H), 7.91 (dt, J = 2.0 and 7.6 Hz, 2H), 8.05 (br, 2H).
窒素雰囲気下、50mLのナスフラスコに、化合物(F)50mg(0.13 mmol)、塩化第一白金35.1mg(0.13 mmol)、ベンゾニトリル3mLを仕込み、200℃で5時間、加熱した。室温まで冷却後、反応液にヘキサン40mLを加え、析出した茶褐色の固体をシリカゲルクロマトグラフィー(展開液:塩化メチレン→塩化メチレン/メタノール=10/1)で精製し、本発明の例示化合物(102)10.1mgを白色紛体として得た(収率18%)。本発明の例示化合物(102)はジクロロメタン溶液において、室温下で460nmに弱く発光した。
1H-NMR(400 MHz in CDCl3):δ(ppm)=8.18 (d, J = 7.6 Hz, 3JPt-H = 56.8 Hz, 2H), 8.03 (d, J = 2.8 Hz, 2H), 7.55 (d, J = 1.6 Hz, 2H), 7.49 (dd, J = 1.6, 7.6 Hz 4H), 6.71 (d, J =2.8 Hz, 2H), 1.84 (s, 6H).
Under a nitrogen atmosphere, a 50 mL eggplant flask was charged with 50 mg (0.13 mmol) of compound (F), 35.1 mg (0.13 mmol) of platinum chloride and 3 mL of benzonitrile, and heated at 200 ° C. for 5 hours. After cooling to room temperature, 40 mL of hexane was added to the reaction solution, and the precipitated brown solid was purified by silica gel chromatography (developing solution: methylene chloride → methylene chloride / methanol = 10/1) to give an exemplary compound (102) of the present invention. 10.1 mg was obtained as a white powder (yield 18%). The exemplary compound (102) of the present invention emitted weak light at 460 nm in a dichloromethane solution at room temperature.
1 H-NMR (400 MHz in CDCl 3 ): δ (ppm) = 8.18 (d, J = 7.6 Hz, 3 J Pt-H = 56.8 Hz, 2H), 8.03 (d, J = 2.8 Hz, 2H), 7.55 (d, J = 1.6 Hz, 2H), 7.49 (dd, J = 1.6, 7.6 Hz 4H), 6.71 (d, J = 2.8 Hz, 2H), 1.84 (s, 6H).
<本発明の化合物(114)の合成>
窒素雰囲気下、500mLの3ツ口フラスコに、3−フェニル−2,4−ペンタンジオン(東京化成工業より購入)20.0g(114 mmol)、ジメチルホルムアミド200mLを仕込み、氷浴で内温5度まで冷却した。内温5〜15℃の範囲で、tert−ブトキシカリウム19.1g(8.91 mmol)を少しずつ加え、室温に戻し、1時間攪拌した。再び冷却し、内温5〜10℃の範囲でヨードメタン14.1mL(226 mmol)を滴下した。室温まで昇温後、80℃で6時間攪拌した。この反応混合物を塩酸水溶液(35%塩酸水溶液17g、水400mLより調製)に滴下し、酢酸エチル500mLで抽出、有機層を合わせて飽和食塩水500mLで2回洗浄、無水硫酸ナトリウムで乾燥後、濾過し、更に濃縮した後、残渣をシリカゲルクロマトグラフィー(展開液:ヘキサン/酢酸エチル=10/1)で精製し、化合物(H)を11.1g得た(収率51%)。
1H-NMR(CDCl3):δ(ppm)=7.50-7.20(m, 5H), 2.12(s, 6H), 1.77(s, 3H)
<Synthesis of Compound (114) of the Present Invention>
In a nitrogen atmosphere, a 500 mL three-necked flask was charged with 20.0 g (114 mmol) of 3-phenyl-2,4-pentanedione (purchased from Tokyo Chemical Industry) and 200 mL of dimethylformamide, and the internal temperature was 5 degrees in an ice bath. Until cooled. In the range of 5 to 15 ° C. of internal temperature, 19.1 g (8.91 mmol) of tert-butoxypotassium was added little by little, and the mixture was returned to room temperature and stirred for 1 hour. The mixture was cooled again, and 14.1 mL (226 mmol) of iodomethane was added dropwise at an internal temperature of 5 to 10 ° C. After heating up to room temperature, it stirred at 80 degreeC for 6 hours. The reaction mixture was added dropwise to aqueous hydrochloric acid (17 g of 35% aqueous hydrochloric acid, prepared from 400 mL of water), extracted with 500 mL of ethyl acetate, the organic layers were combined, washed twice with 500 mL of saturated brine, dried over anhydrous sodium sulfate, and filtered. After further concentration, the residue was purified by silica gel chromatography (developing solution: hexane / ethyl acetate = 10/1) to obtain 11.1 g of compound (H) (yield 51%).
1 H-NMR (CDCl 3 ): δ (ppm) = 7.50-7.20 (m, 5H), 2.12 (s, 6H), 1.77 (s, 3H)
窒素雰囲気下、100mLの3ツ口フラスコに、化合物(H) 5.00g(26.3 mmol)、ジメチルホルムアミド−ジメチルアセタール8.9mL、ジメチルホルムアミド30mLを仕込み、14時間、150℃で反応させた。反応液を減圧下で、濃縮した後、残渣をシリカゲルクロマトグラフィー(展開液:酢酸エチル/エタノール=8/2)で精製し、化合物(I)を3.86g得た(収率48.8%)。
1H-NMR (CDCl3):δ(ppm)=7.62 (d, J = 12.3 Hz, 2H),7.40-7.10 (m, 5H), 5.15 (d, J = 12.3 Hz, 2H), 3.05 (broad s, 6H), 2.73 (broad s, 6H), 1.72 (s, 3H).
Under a nitrogen atmosphere, a 100 mL three-necked flask was charged with 5.00 g (26.3 mmol) of compound (H), 8.9 mL of dimethylformamide-dimethylacetal, and 30 mL of dimethylformamide, and reacted at 150 ° C. for 14 hours. After the reaction solution was concentrated under reduced pressure, the residue was purified by silica gel chromatography (developing solution: ethyl acetate / ethanol = 8/2) to obtain 3.86 g of compound (I) (yield 48.8%). ).
1 H-NMR (CDCl 3 ): δ (ppm) = 7.62 (d, J = 12.3 Hz, 2H), 7.40-7.10 (m, 5H), 5.15 (d, J = 12.3 Hz, 2H), 3.05 (broad s, 6H), 2.73 (broad s, 6H), 1.72 (s, 3H).
窒素雰囲気下、300mLの3ツ口フラスコに、化合物(I)3.86g(12.8 mmol)、ヒドラジン1水和物1.3mL、エタノール230mLを仕込み、5時間加熱還流させた。反応液を濃縮し、残渣をシリカゲルクロマトグラフィー(展開液:酢酸エチル/エタノール=8/2)で精製し、化合物(J)を2.88g得た(収率94.1%)。
1H-NMR (CDCl3):δ(ppm)=7.46 (d, J = 2.1 Hz, 2H), 7.30-7.00 (m, 5H), 6.18 (d, J = 2.1 Hz, 2H), 2.07(s, 3H).
Under a nitrogen atmosphere, 3.86 g (12.8 mmol) of Compound (I), 1.3 mL of hydrazine monohydrate, and 230 mL of ethanol were charged in a 300 mL three-necked flask and heated to reflux for 5 hours. The reaction solution was concentrated, and the residue was purified by silica gel chromatography (developing solution: ethyl acetate / ethanol = 8/2) to obtain 2.88 g of compound (J) (yield 94.1%).
1 H-NMR (CDCl 3 ): δ (ppm) = 7.46 (d, J = 2.1 Hz, 2H), 7.30-7.00 (m, 5H), 6.18 (d, J = 2.1 Hz, 2H), 2.07 (s , 3H).
窒素雰囲気下、200mLの3ツ口フラスコに、化合物(J) 0.50g(2.1 mmol)、3−ヨードベンゾトリフルオリド5.71g(21.0 mmol)、酸化銅30mg(0.21 mmol)、サリチルアルドキシム115mg(0.84 mmol)、炭酸セシウム2.73g(14.2 mmol)、ブチロニトリル30mLを仕込み、140℃で18時間反応させた。反応液を濾過し、濃縮した。得られた残渣をシリカゲルクロマトグラフィー(展開液:ヘキサン/酢酸エチル=10/1)で精製し、化合物(K)を795mg得た(収率72%)。
1H-NMR (CDCl3):δ(ppm)=7.97-7.82 (m, 6H), 7.57-7.47 (m, 4H), 7.58-7.46 (m, 4H), 6.39 (d, J = 2.7 Hz, 2H), 2.29 (s, 3H).
Under a nitrogen atmosphere, in a 200 mL three-necked flask, 0.50 g (2.1 mmol) of compound (J), 5.71 g (21.0 mmol) of 3-iodobenzotrifluoride, 30 mg (0.21 mmol) of copper oxide, 115 mg of salicylaldoxime (0.84 mmol), 2.73 g (14.2 mmol) of cesium carbonate, and 30 mL of butyronitrile were charged and reacted at 140 ° C. for 18 hours. The reaction was filtered and concentrated. The obtained residue was purified by silica gel chromatography (developing solution: hexane / ethyl acetate = 10/1) to obtain 795 mg of Compound (K) (yield 72%).
1 H-NMR (CDCl 3 ): δ (ppm) = 7.97-7.82 (m, 6H), 7.57-7.47 (m, 4H), 7.58-7.46 (m, 4H), 6.39 (d, J = 2.7 Hz, 2H), 2.29 (s, 3H).
窒素雰囲気下、50mLのナスフラスコに、化合物(K)393mg(0.746 mmol)、塩化白金(II)199mg(0.748 mmol)、ベンゾニトリル15mLを仕込み、200℃で17時間、加熱した。室温まで冷却後、減圧下で濃縮し、残渣をシリカゲルクロマトグラフィー(展開液:クロロホルム)で精製し、クロロホルム−メタノール−ヘキサンから再結晶して、本発明の例示化合物(114)を180mg得た(収率33%)。本発明の例示化合物(114)はジクロロメタン溶液において、室温下で460nmに発光した。
1H-NMR(CDCl3):δ(ppm)=8.24 (d, J = 7.5 Hz, 3JPt-H = 55.5 Hz, 2H), 7.97(d, J = 2.7 Hz, 2H), 7.55-7.23 (m, 9H), 6.27 (d, J = 2.7 Hz, 2H), 2.22(s, 3H).
Under a nitrogen atmosphere, a 50 mL eggplant flask was charged with 393 mg (0.746 mmol) of compound (K), 199 mg (0.748 mmol) of platinum (II) chloride and 15 mL of benzonitrile, and heated at 200 ° C. for 17 hours. After cooling to room temperature, the mixture was concentrated under reduced pressure, and the residue was purified by silica gel chromatography (developing solution: chloroform) and recrystallized from chloroform-methanol-hexane to obtain 180 mg of exemplary compound (114) of the present invention ( Yield 33%). The exemplified compound (114) of the present invention emitted light at 460 nm in a dichloromethane solution at room temperature.
1 H-NMR (CDCl 3 ): δ (ppm) = 8.24 (d, J = 7.5 Hz, 3 J Pt-H = 55.5 Hz, 2H), 7.97 (d, J = 2.7 Hz, 2H), 7.55-7.23 (m, 9H), 6.27 (d, J = 2.7 Hz, 2H), 2.22 (s, 3H).
次に、本発明の化合物を含有する発光素子に関して説明する。
本発明の発光素子は、本発明の化合物を利用する素子である点以外は通常の発光システム、駆動方法、利用形態などに用いることができるが、代表的な発光素子として有機EL(エレクトロルミネッセンス)素子に用いられることが好ましい。
本発明の化合物は、発光材料、ホスト材料、励起子ブロック材料、電荷ブロック材料あるいは電荷輸送材料として利用する場合が好ましく、ホスト材料、発光材料、電荷輸送材料として利用する場合がさらに好ましく、発光材料あるいはホスト材料として利用する場合がより好ましい。発光材料として用いる場合は、紫外発光であっても赤外発光であっても良く、また蛍光発光であってもりん光発光であっても良い。電荷輸送材料として利用する場合、正孔輸送性であっても電子輸送性であってもよい。
本発明の化合物を発光層中の発光材料として使用する場合には、発光層中に0.1〜40質量%含まれることが好ましく、0.5〜30質量%がより好ましく、0.5〜20質量%が特に好ましい。
また、発光層中の発光材料以外のホスト材料として使用する場合には、発光層中に60〜99.9質量%含まれることが好ましく、70〜99.5質量%がより好ましく、80〜99.5質量%が特に好ましい。
また、発光層以外の層に含まれる場合は、該層中に0.1〜100質量%含まれることが好ましく、0.5〜100質量%がより好ましく、10〜100質量%が特に好ましい。
Next, a light emitting device containing the compound of the present invention will be described.
The light-emitting device of the present invention can be used in ordinary light-emitting systems, driving methods, usage forms, and the like except that it is a device that uses the compound of the present invention. As a typical light-emitting device, organic EL (electroluminescence) is used. It is preferably used for an element.
The compound of the present invention is preferably used as a light emitting material, a host material, an exciton block material, a charge blocking material or a charge transport material, more preferably used as a host material, a light emitting material or a charge transport material. Or the case where it utilizes as a host material is more preferable. When used as a light-emitting material, ultraviolet light emission or infrared light emission may be used, and fluorescent light emission or phosphorescence light emission may be used. When used as a charge transport material, it may be a hole transport property or an electron transport property.
When using the compound of this invention as a luminescent material in a light emitting layer, it is preferable that 0.1-40 mass% is contained in a light emitting layer, 0.5-30 mass% is more preferable, 0.5- 20% by mass is particularly preferred.
Moreover, when using as host materials other than the luminescent material in a light emitting layer, it is preferable that 60-99.9 mass% is contained in a light emitting layer, 70-99.5 mass% is more preferable, and 80-99. .5% by mass is particularly preferred.
Moreover, when contained in layers other than a light emitting layer, it is preferable that 0.1-100 mass% is contained in this layer, 0.5-100 mass% is more preferable, 10-100 mass% is especially preferable.
<有機電界発光素子>
本発明の有機電界発光素子について詳細に説明する。本発明の素子は基板上に陰極と陽極を有し、両電極の間に発光層を含む少なくとも一層の有機化合物層(有機化合物層が一層である場合には発光層)を有する。発光素子の性質上、陽極及び陰極のうち少なくとも一方の電極は、透明であることが好ましい。
<Organic electroluminescent device>
The organic electroluminescent element of the present invention will be described in detail. The element of the present invention has a cathode and an anode on a substrate, and has at least one organic compound layer (a light emitting layer when there is one organic compound layer) including a light emitting layer between both electrodes. In view of the properties of the light emitting element, at least one of the anode and the cathode is preferably transparent.
本発明の素子において、該有機化合物層の機能は、特に限定されないが、発光層の他に正孔注入層、正孔輸送層、電子注入層、電子輸送層、正孔ブロック層、電子ブロック層、励起子ブロック層、保護層などであってもよい。またこれらの各層は、それぞれ他の機能を兼備していても良い。 In the element of the present invention, the function of the organic compound layer is not particularly limited, but in addition to the light emitting layer, a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a hole block layer, an electron block layer , An exciton blocking layer, a protective layer, and the like. Each of these layers may have other functions.
本発明において、層の積層の態様としては、陽極側から、正孔輸送層、発光層、電子輸送層の順に積層されている態様が好ましい。更に、正孔輸送層と発光層との間、又は、発光層と電子輸送層との間には、電荷ブロック層等を有していてもよい。陽極と正孔輸送層との間に、正孔注入層を有してもよく、陰極と電子輸送層との間には、電子注入層を有してもよい。尚、各層は複数の二次層に分かれていてもよい。 In the present invention, as the layer stacking mode, a mode in which a hole transport layer, a light emitting layer, and an electron transport layer are stacked in this order from the anode side is preferable. Further, a charge blocking layer or the like may be provided between the hole transport layer and the light-emitting layer, or between the light-emitting layer and the electron transport layer. A hole injection layer may be provided between the anode and the hole transport layer, and an electron injection layer may be provided between the cathode and the electron transport layer. Each layer may be divided into a plurality of secondary layers.
<基板>
本発明で使用する基板としては、有機化合物層から発せられる光を散乱又は減衰させない基板であることが好ましい。その具体例としては、ジルコニア安定化イットリウム(YSZ)、ガラス等の無機材料、ポリエチレンテレフタレート、ポリブチレンフタレート、ポリエチレンナフタレート等のポリエステル、ポリスチレン、ポリカーボネート、ポリエーテルスルホン、ポリアリレート、ポリイミド、ポリシクロオレフィン、ノルボルネン樹脂、ポリ(クロロトリフルオロエチレン)等の有機材料が挙げられる。
例えば、基板としてガラスを用いる場合、その材質については、ガラスからの溶出イオンを少なくするため、無アルカリガラスを用いることが好ましい。また、ソーダライムガラスを用いる場合には、シリカなどのバリアコートを施したものを使用することが好ましい。有機材料の場合には、耐熱性、寸法安定性、耐溶剤性、電気絶縁性、及び加工性に優れていることが好ましい。
<Board>
The substrate used in the present invention is preferably a substrate that does not scatter or attenuate light emitted from the organic compound layer. Specific examples include zirconia-stabilized yttrium (YSZ), inorganic materials such as glass, polyesters such as polyethylene terephthalate, polybutylene phthalate, and polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, and polycycloolefin. , Organic materials such as norbornene resin and poly (chlorotrifluoroethylene).
For example, when glass is used as the substrate, alkali-free glass is preferably used as the material in order to reduce ions eluted from the glass. Moreover, when using soda-lime glass, it is preferable to use what gave barrier coatings, such as a silica. In the case of an organic material, it is preferable that it is excellent in heat resistance, dimensional stability, solvent resistance, electrical insulation, and workability.
基板の形状、構造、大きさ等については、特に制限はなく、発光素子の用途、目的等に応じて適宜選択することができる。一般的には、基板の形状としては、板状であることが好ましい。基板の構造としては、単層構造であってもよいし、積層構造であってもよく、また、単一部材で形成されていてもよいし、2以上の部材で形成されていてもよい。 There is no restriction | limiting in particular about the shape of a board | substrate, a structure, a magnitude | size, It can select suitably according to the use, purpose, etc. of a light emitting element. In general, the shape of the substrate is preferably a plate shape. The structure of the substrate may be a single layer structure, a laminated structure, may be formed of a single member, or may be formed of two or more members.
基板は、無色透明であっても、有色透明であってもよいが、発光層から発せられる光を散乱又は減衰等させることがない点で、無色透明であることが好ましい。 The substrate may be colorless and transparent or colored and transparent, but is preferably colorless and transparent in that it does not scatter or attenuate light emitted from the light emitting layer.
基板には、その表面又は裏面に透湿防止層(ガスバリア層)を設けることができる。
透湿防止層(ガスバリア層)の材料としては、窒化珪素、酸化珪素などの無機物が好適に用いられる。透湿防止層(ガスバリア層)は、例えば、高周波スパッタリング法などにより形成することができる。熱可塑性基板を用いる場合には、更に必要に応じて、ハードコート層、アンダーコート層などを設けてもよい。
The substrate can be provided with a moisture permeation preventing layer (gas barrier layer) on the front surface or the back surface.
As a material for the moisture permeation preventive layer (gas barrier layer), inorganic materials such as silicon nitride and silicon oxide are preferably used. The moisture permeation preventing layer (gas barrier layer) can be formed by, for example, a high frequency sputtering method. When a thermoplastic substrate is used, a hard coat layer, an undercoat layer, or the like may be further provided as necessary.
<陽極>
陽極は、通常、有機化合物層に正孔を供給する電極としての機能を有していればよく、その形状、構造、大きさ等については特に制限はなく、発光素子の用途、目的に応じて、公知の電極材料の中から適宜選択することができる。前述のごとく、陽極は、通常透明陽極として設けられる。
<Anode>
The anode usually has a function as an electrode for supplying holes to the organic compound layer, and there is no particular limitation on the shape, structure, size, etc., depending on the use and purpose of the light-emitting element. , Can be appropriately selected from known electrode materials. As described above, the anode is usually provided as a transparent anode.
陽極の材料としては、例えば、金属、合金、金属酸化物、導電性化合物、又はこれらの混合物が好適に挙げられる。陽極材料の具体例としては、アンチモンやフッ素等をドープした酸化錫(ATO、FTO)、酸化錫、酸化亜鉛、酸化インジウム、酸化インジウム錫
(ITO)、酸化亜鉛インジウム(IZO)等の導電性金属酸化物、金、銀、クロム、ニッケル等の金属、さらにこれらの金属と導電性金属酸化物との混合物又は積層物、ヨウ化銅、硫化銅などの無機導電性物質、ポリアニリン、ポリチオフェン、ポリピロールなどの有機導電性材料、及びこれらとITOとの積層物などが挙げられる。この中で好ましいのは、導電性金属酸化物であり、特に、生産性、高導電性、透明性等の点からはITOが好ましい。
Suitable examples of the material for the anode include metals, alloys, metal oxides, conductive compounds, and mixtures thereof. Specific examples of the anode material include conductive metals such as tin oxide doped with antimony and fluorine (ATO, FTO), tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO). Metals such as oxides, gold, silver, chromium, nickel, and mixtures or laminates of these metals and conductive metal oxides, inorganic conductive materials such as copper iodide and copper sulfide, polyaniline, polythiophene, polypyrrole, etc. Organic conductive materials, and a laminate of these and ITO. Among these, conductive metal oxides are preferable, and ITO is particularly preferable from the viewpoints of productivity, high conductivity, transparency, and the like.
陽極は、例えば、印刷方式、コーティング方式等の湿式方式、真空蒸着法、スパッタリング法、イオンプレーティング法等の物理的方式、CVD、プラズマCVD法等の化学的方式などの中から、陽極を構成する材料との適性を考慮して適宜選択した方法に従って、前記基板上に形成することができる。例えば、陽極の材料として、ITOを選択する場合には、陽極の形成は、直流又は高周波スパッタ法、真空蒸着法、イオンプレーティング法等に従って行うことができる。 The anode is composed of, for example, a wet method such as a printing method and a coating method, a physical method such as a vacuum deposition method, a sputtering method, and an ion plating method, and a chemical method such as a CVD and a plasma CVD method. It can be formed on the substrate according to a method appropriately selected in consideration of suitability with the material to be processed. For example, when ITO is selected as the anode material, the anode can be formed according to a direct current or high frequency sputtering method, a vacuum deposition method, an ion plating method, or the like.
本発明の素子において、陽極の形成位置としては特に制限はなく、発光素子の用途、目的に応じて適宜選択することができる。が、前記基板上に構成されるのが好ましい。この場合、陽極は、基板における一方の表面の全部に形成されていてもよく、その一部に形成されていてもよい。 In the element of the present invention, the formation position of the anode is not particularly limited, and can be appropriately selected according to the use and purpose of the light emitting element. Is preferably constructed on the substrate. In this case, the anode may be formed on the entire one surface of the substrate, or may be formed on a part thereof.
なお、陽極を形成する際のパターニングとしては、フォトリソグラフィーなどによる化学的エッチングによって行ってもよいし、レーザーなどによる物理的エッチングによって行ってもよく、また、マスクを重ねて真空蒸着やスパッタ等をして行ってもよいし、リフトオフ法や印刷法によって行ってもよい。 The patterning for forming the anode may be performed by chemical etching such as photolithography, or may be performed by physical etching such as laser, or vacuum deposition or sputtering with a mask overlapped. It may be performed by a lift-off method or a printing method.
陽極の厚みとしては、陽極を構成する材料により適宜選択することができ、一概に規定することはできないが、通常、10nm〜50μm程度であり、50nm〜20μmが好ましい。 The thickness of the anode can be appropriately selected depending on the material constituting the anode and cannot be generally defined, but is usually about 10 nm to 50 μm, and preferably 50 nm to 20 μm.
陽極の抵抗値としては、103Ω/□以下が好ましく、102Ω/□以下がより好ましい。陽極が透明である場合は、無色透明であっても、有色透明であってもよい。透明陽極側から発光を取り出すためには、その透過率としては、60%以上が好ましく、70%以上がより好ましい。 The resistance value of the anode is preferably 10 3 Ω / □ or less, and more preferably 10 2 Ω / □ or less. When the anode is transparent, it may be colorless and transparent or colored and transparent. In order to take out light emission from the transparent anode side, the transmittance is preferably 60% or more, and more preferably 70% or more.
なお、透明陽極については、沢田豊監修「透明電極膜の新展開」シーエムシー刊(1999)に詳述があり、ここに記載される事項を本発明に適用することができる。耐熱性の低いプラスティック基材を用いる場合は、ITO又はIZOを使用し、150℃以下の低温で成膜した透明陽極が好ましい。 The transparent anode is described in detail in the book “New Development of Transparent Electrode Films” published by CMC (1999), supervised by Yutaka Sawada, and the matters described here can be applied to the present invention. In the case of using a plastic substrate having low heat resistance, a transparent anode formed using ITO or IZO at a low temperature of 150 ° C. or lower is preferable.
<陰極>
陰極は、通常、有機化合物層に電子を注入する電極としての機能を有していればよく、その形状、構造、大きさ等については特に制限はなく、素子の用途、目的に応じて、公知の電極材料の中から適宜選択することができる。
<Cathode>
The cathode usually has a function as an electrode for injecting electrons into the organic compound layer, and there is no particular limitation on the shape, structure, size, etc., and it is known depending on the use and purpose of the device. The electrode material can be selected as appropriate.
陰極を構成する材料としては、例えば、金属、合金、金属酸化物、電気伝導性化合物、これらの混合物などが挙げられる。具体例としてはアルカリ金属(たとえば、Li、Na、K、Cs等)、アルカリ土類金属(たとえばMg、Ca等)、金、銀、鉛、アルミニウム、ナトリウム−カリウム合金、リチウム−アルミニウム合金、マグネシウム−銀合金、インジウム、イッテルビウム等の希土類金属、などが挙げられる。これらは、1種単独で使用してもよいが、安定性と電子注入性とを両立させる観点からは、2種以上を好適に併用することができる。 Examples of the material constituting the cathode include metals, alloys, metal oxides, electrically conductive compounds, and mixtures thereof. Specific examples include alkali metals (eg, Li, Na, K, Cs, etc.), alkaline earth metals (eg, Mg, Ca, etc.), gold, silver, lead, aluminum, sodium-potassium alloys, lithium-aluminum alloys, magnesium. -Rare earth metals such as silver alloys, indium, ytterbium, and the like. These may be used alone, but two or more can be suitably used in combination from the viewpoint of achieving both stability and electron injection.
これらの中でも、陰極を構成する材料としては、電子注入性の点で、アルカリ金属やアルカリ土類金属が好ましく、保存安定性に優れる点で、アルミニウムを主体とする材料が好ましい。
アルミニウムを主体とする材料とは、アルミニウム単独、アルミニウムと0.01〜10質量%のアルカリ金属又はアルカリ土類金属との合金若しくはこれらの混合物(例えば、リチウム−アルミニウム合金、マグネシウム−アルミニウム合金など)をいう。
Among these, as a material constituting the cathode, an alkali metal or an alkaline earth metal is preferable from the viewpoint of electron injecting property, and a material mainly composed of aluminum is preferable from the viewpoint of excellent storage stability.
The material mainly composed of aluminum is aluminum alone, an alloy of aluminum and 0.01 to 10% by mass of alkali metal or alkaline earth metal, or a mixture thereof (for example, lithium-aluminum alloy, magnesium-aluminum alloy, etc.) Say.
なお、陰極の材料については、特開平2−15595号公報、特開平5−121172号公報に詳述されており、これらの広報に記載の材料は、本発明においても適用することができる。 The materials for the cathode are described in detail in JP-A-2-15595 and JP-A-5-121172, and the materials described in these public relations can also be applied in the present invention.
陰極の形成方法については、特に制限はなく、公知の方法に従って行うことができる。例えば、印刷方式、コーティング方式等の湿式方式、真空蒸着法、スパッタリング法、イオンプレーティング法等の物理的方式、CVD、プラズマCVD法等の化学的方式などの中から、前記した陰極を構成する材料との適性を考慮して適宜選択した方法に従って形成することができる。例えば、陰極の材料として、金属等を選択する場合には、その1種又は2種以上を同時又は順次にスパッタ法等に従って行うことができる。 There is no restriction | limiting in particular about the formation method of a cathode, According to a well-known method, it can carry out. For example, the cathode described above is configured from a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical method such as CVD or plasma CVD method. It can be formed according to a method appropriately selected in consideration of suitability with the material. For example, when a metal or the like is selected as the cathode material, one or more of them can be simultaneously or sequentially performed according to a sputtering method or the like.
陰極を形成するに際してのパターニングは、フォトリソグラフィーなどによる化学的エッチングによって行ってもよいし、レーザーなどによる物理的エッチングによって行ってもよく、マスクを重ねて真空蒸着やスパッタ等をして行ってもよいし、リフトオフ法や印刷法によって行ってもよい。 Patterning when forming the cathode may be performed by chemical etching such as photolithography, physical etching by laser, or the like, or by vacuum deposition or sputtering with the mask overlaid. It may be performed by a lift-off method or a printing method.
本発明において、陰極形成位置は特に制限はなく、有機化合物層上の全部に形成されていてもよく、その一部に形成されていてもよい。
また、陰極と前記有機化合物層との間に、アルカリ金属又はアルカリ土類金属のフッ化物、酸化物等による誘電体層を0.1〜5nmの厚みで挿入してもよい。この誘電体層は、一種の電子注入層と見ることもできる。誘電体層は、例えば、真空蒸着法、スパッタリング法、イオンプレーティング法等により形成することができる。
In the present invention, the cathode formation position is not particularly limited, and may be formed on the entire organic compound layer or a part thereof.
Further, a dielectric layer made of an alkali metal or alkaline earth metal fluoride or oxide may be inserted between the cathode and the organic compound layer with a thickness of 0.1 to 5 nm. This dielectric layer can also be regarded as a kind of electron injection layer. The dielectric layer can be formed by, for example, a vacuum deposition method, a sputtering method, an ion plating method, or the like.
陰極の厚みは、陰極を構成する材料により適宜選択することができ、一概に規定することはできないが、通常10nm〜5μm程度であり、50nm〜1μmが好ましい。
また、陰極は、透明であってもよいし、不透明であってもよい。なお、透明な陰極は、陰極の材料を1〜10nmの厚さに薄く成膜し、更にITOやIZO等の透明な導電性材料を積層することにより形成することができる。
The thickness of the cathode can be appropriately selected depending on the material constituting the cathode and cannot be generally defined, but is usually about 10 nm to 5 μm, and preferably 50 nm to 1 μm.
Further, the cathode may be transparent or opaque. The transparent cathode can be formed by depositing a thin cathode material to a thickness of 1 to 10 nm and further laminating a transparent conductive material such as ITO or IZO.
<有機化合物層>
本発明における有機化合物層について説明する。
本発明の有機電界発光素子は、発光層を含む少なくとも一層の有機化合物層を有しており、発光層以外の他の有機化合物層としては、前述したごとく、正孔輸送層、電子輸送層、電荷ブロック層、正孔注入層、電子注入層等の各層が挙げられる。
<Organic compound layer>
The organic compound layer in the present invention will be described.
The organic electroluminescent element of the present invention has at least one organic compound layer including a light emitting layer, and as the organic compound layer other than the light emitting layer, as described above, a hole transport layer, an electron transport layer, Examples include a charge blocking layer, a hole injection layer, and an electron injection layer.
−有機化合物層の形成−
本発明の有機電界発光素子において、有機化合物層を構成する各層は、蒸着法やスパッタ法等の乾式製膜法、転写法、印刷法等いずれによっても好適に形成することができる。
-Formation of organic compound layer-
In the organic electroluminescent element of the present invention, each layer constituting the organic compound layer can be suitably formed by any of a dry film forming method such as a vapor deposition method and a sputtering method, a transfer method, and a printing method.
−発光層−
発光層は、電界印加時に、陽極、正孔注入層、又は正孔輸送層から正孔を受け取り、陰極、電子注入層、又は電子輸送層から電子を受け取り、正孔と電子の再結合の場を提供して発光させる機能を有する層である。
本発明における発光層は、発光材料のみで構成されていても良く、ホスト材料と発光材料の混合層とした構成でも良い。発光材料は蛍光発光材料でも燐光発光材料であっても良く、ドーパントは1種であっても2種以上であっても良い。ホスト材料は電荷輸送材料であることが好ましい。ホスト材料は1種であっても2種以上であっても良く、例えば、電子輸送性のホスト材料とホール輸送性のホスト材料を混合した構成が挙げられる。さらに、発光層中に電荷輸送性を有さず、発光しない材料を含んでいても良い。
また、発光層は1層であっても2層以上であってもよく、それぞれの層が異なる発光色で発光してもよい。
-Light emitting layer-
The light-emitting layer receives holes from the anode, the hole injection layer, or the hole transport layer when an electric field is applied, receives electrons from the cathode, the electron injection layer, or the electron transport layer, and recombines holes and electrons. It is a layer which has the function to provide and to emit light.
The light emitting layer in the present invention may be composed of only a light emitting material, or may be a mixed layer of a host material and a light emitting material. The light emitting material may be a fluorescent light emitting material or a phosphorescent light emitting material, and the dopant may be one type or two or more types. The host material is preferably a charge transport material. The host material may be one type or two or more types, and examples thereof include a configuration in which an electron transporting host material and a hole transporting host material are mixed. Further, the light emitting layer may include a material that does not have charge transporting properties and does not emit light.
Further, the light emitting layer may be a single layer or two or more layers, and each layer may emit light in different emission colors.
本発明の化合物と合わせて使用できる蛍光発光材料の例としては、例えば、ベンゾオキサゾール誘導体、ベンゾイミダゾール誘導体、ベンゾチアゾール誘導体、スチリルベンゼン誘導体、ポリフェニル誘導体、ジフェニルブタジエン誘導体、テトラフェニルブタジエン誘導体、ナフタルイミド誘導体、クマリン誘導体、縮合芳香族化合物、ペリノン誘導体、オキサジアゾール誘導体、オキサジン誘導体、アルダジン誘導体、ピラリジン誘導体、シクロペンタジエン誘導体、ビススチリルアントラセン誘導体、キナクリドン誘導体、ピロロピリジン誘導体、チアジアゾロピリジン誘導体、スチリルアミン誘導体、ジケトピロロピロール誘導体、芳香族ジメチリディン化合物、8−キノリノール誘導体の金属錯体やピロメテン誘導体の金属錯体に代表される各種金属錯体等、ポリチオフェン、ポリフェニレン、ポリフェニレンビニレン等のポリマー化合物、有機シラン誘導体などの化合物等が挙げられる。 Examples of fluorescent materials that can be used in combination with the compounds of the present invention include, for example, benzoxazole derivatives, benzimidazole derivatives, benzothiazole derivatives, styrylbenzene derivatives, polyphenyl derivatives, diphenylbutadiene derivatives, tetraphenylbutadiene derivatives, naphthalimides. Derivatives, coumarin derivatives, condensed aromatic compounds, perinone derivatives, oxadiazole derivatives, oxazine derivatives, aldazine derivatives, pyralidine derivatives, cyclopentadiene derivatives, bisstyrylanthracene derivatives, quinacridone derivatives, pyrrolopyridine derivatives, thiadiazolopyridine derivatives, styryl For metal complexes of amine derivatives, diketopyrrolopyrrole derivatives, aromatic dimethylidin compounds, 8-quinolinol derivatives and pyromethene derivatives. And various metal complexes represented by, polythiophene, polyphenylene, polyphenylene vinylene polymer compounds include compounds such as organic silane derivatives.
錯体の配位子としては、例えば、G.Wilkinson等著,Comprehensive Coordination Chemistry, Pergamon Press社1987年発行、H.Yersin著,「Photochemistry and Photophysics of Coordination Compounds」 Springer−Verlag社1987年発行、山本明夫著「有機金属化学−基礎と応用−」裳華房社1982年発行等に記載の配位子などが挙げられる。
具体的な配位子としては、好ましくは、ハロゲン配位子(好ましくは塩素配位子)、含窒素ヘテロ環配位子(例えば、フェニルピリジン、ベンゾキノリン、キノリノール、ビピリジル、フェナントロリンなど)、ジケトン配位子(例えば、アセチルアセトンなど)、カルボン酸配位子(例えば、酢酸配位子など)、一酸化炭素配位子、イソニトリル配位子、シアノ配位子であり、より好ましくは、含窒素ヘテロ環配位子である。上記錯体は、化合物中に遷移金属原子を一つ有してもよいし、また、2つ以上有するいわゆる複核錯体であってもよい。異種の金属原子を同時に含有していてもよい。
Examples of the ligand of the complex include G.I. Wilkinson et al., Comprehensive Coordination Chemistry, Pergamon Press, 1987, H.C. Examples include ligands described in Yersin's "Photochemistry and Photophysics of Coordination Compounds" published by Springer-Verlag 1987, Akio Yamamoto "Organic Metal Chemistry-Fundamentals and Applications-" .
Specific ligands are preferably halogen ligands (preferably chlorine ligands), nitrogen-containing heterocyclic ligands (eg, phenylpyridine, benzoquinoline, quinolinol, bipyridyl, phenanthroline, etc.), diketones Ligand (for example, acetylacetone), carboxylic acid ligand (for example, acetic acid ligand), carbon monoxide ligand, isonitrile ligand, cyano ligand, more preferably nitrogen-containing Heterocyclic ligand. The complex may have one transition metal atom in the compound, or may be a so-called binuclear complex having two or more. Different metal atoms may be contained at the same time.
また、使用できる燐光発光材料としては、国際公開特許第04/099339号パンフレット、同04/006498号パンフレット、同04/108857号パンフレットに記載の金属錯体が好ましく、本発明の化合物は上記燐光発光材料と組み合わせて適用することが好ましい。
燐光発光材料は、発光層中に、0.1〜40質量%含有されることが好ましく、0.5〜20質量%含有されることがより好ましい。
As the phosphorescent light-emitting material that can be used, metal complexes described in International Patent Publication Nos. 04/099339, 04/006498, and 04/108857 are preferable, and the compound of the present invention is the phosphorescent material described above. It is preferable to apply in combination.
The phosphorescent material is preferably contained in the light emitting layer in an amount of 0.1 to 40% by mass, and more preferably 0.5 to 20% by mass.
また、本発明における発光層に含有されるホスト材料としては、例えば、カルバゾール骨格を有するもの、ジアリールアミン骨格を有するもの、ピリジン骨格を有するもの、ピラジン骨格を有するもの、トリアジン骨格を有するもの及びアリールシラン骨格を有するものや、後述の正孔注入層、正孔輸送層、電子注入層、電子輸送層の項で例示されている材料が挙げられる。 Examples of the host material contained in the light emitting layer in the present invention include those having a carbazole skeleton, those having a diarylamine skeleton, those having a pyridine skeleton, those having a pyrazine skeleton, those having a triazine skeleton, and aryl. Examples thereof include materials having a silane skeleton and materials exemplified in the sections of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer described later.
発光層の厚さは、特に限定されるものではないが、通常、1nm〜500nmであるのが好ましく、5nm〜200nmであるのがより好ましく、10nm〜100nmであるのが更に好ましい。 Although the thickness of a light emitting layer is not specifically limited, Usually, it is preferable that they are 1 nm-500 nm, it is more preferable that they are 5 nm-200 nm, and it is still more preferable that they are 10 nm-100 nm.
−正孔注入層、正孔輸送層−
正孔注入層、正孔輸送層は、陽極又は陽極側から正孔を受け取り陰極側に輸送する機能を有する層である。正孔注入層、正孔輸送層は、具体的には、カルバゾール誘導体、トリアゾール誘導体、オキサゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、芳香族第三級アミン化合物、スチリルアミン化合物、芳香族ジメチリディン系化合物、ポルフィリン系化合物、有機シラン誘導体、カーボン、等を含有する層であることが好ましい。
正孔注入層、正孔輸送層の厚さは、駆動電圧を下げるという観点から、各々500nm以下であることが好ましい。
正孔輸送層の厚さとしては、1nm〜500nmであるのが好ましく、5nm〜200nmであるのがより好ましく、10nm〜100nmであるのが更に好ましい。また、正孔注入層の厚さとしては、0.1nm〜200nmであるのが好ましく、0.5nm〜100nmであるのがより好ましく、1nm〜100nmであるのが更に好ましい。
正孔注入層、正孔輸送層は、上述した材料の1種又は2種以上からなる単層構造であってもよいし、同一組成又は異種組成の複数層からなる多層構造であってもよい。
-Hole injection layer, hole transport layer-
The hole injection layer and the hole transport layer are layers having a function of receiving holes from the anode or the anode side and transporting them to the cathode side. Specifically, the hole injection layer and the hole transport layer are carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamines. Derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidin compounds, porphyrin compounds, organosilane derivatives, carbon , Etc. are preferable.
The thicknesses of the hole injection layer and the hole transport layer are each preferably 500 nm or less from the viewpoint of lowering the driving voltage.
The thickness of the hole transport layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and still more preferably 10 nm to 100 nm. In addition, the thickness of the hole injection layer is preferably 0.1 nm to 200 nm, more preferably 0.5 nm to 100 nm, and still more preferably 1 nm to 100 nm.
The hole injection layer and the hole transport layer may have a single-layer structure composed of one or more of the materials described above, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions. .
−電子注入層、電子輸送層−
電子注入層、電子輸送層は、陰極又は陰極側から電子を受け取り陽極側に輸送する機能を有する層である。電子注入層、電子輸送層は、具体的には、トリアゾール誘導体、オキサゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、フルオレノン誘導体、アントラキノジメタン誘導体、アントロン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド誘導体、フルオレニリデンメタン誘導体、ジスチリルピラジン誘導体、ナフタレン、ペリレン等の芳香環テトラカルボン酸無水物、フタロシアニン誘導体、8−キノリノール誘導体の金属錯体やメタルフタロシアニン、ベンゾオキサゾールやベンゾチアゾールを配位子とする金属錯体に代表される各種金属錯体、有機シラン誘導体、等を含有する層であることが好ましい。
-Electron injection layer, electron transport layer-
The electron injection layer and the electron transport layer are layers having a function of receiving electrons from the cathode or the cathode side and transporting them to the anode side. Specifically, the electron injection layer and the electron transport layer are triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, fluorenone derivatives, anthraquinodimethane derivatives, anthrone derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, Carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, aromatic tetracarboxylic anhydrides such as naphthalene and perylene, phthalocyanine derivatives, metal complexes of 8-quinolinol derivatives, metal phthalocyanines, benzoxazoles and benzothiazoles as ligands It is preferably a layer containing various metal complexes typified by metal complexes, organosilane derivatives, and the like.
電子注入層、電子輸送層の厚さは、駆動電圧を下げるという観点から、各々500nm以下であることが好ましい。
電子輸送層の厚さとしては、1nm〜500nmであるのが好ましく、5nm〜200nmであるのがより好ましく、10nm〜100nmであるのが更に好ましい。また、電子注入層の厚さとしては、0.1nm〜200nmであるのが好ましく、0.2nm〜100nmであるのがより好ましく、0.5nm〜50nmであるのが更に好ましい。
電子注入層、電子輸送層は、上述した材料の1種又は2種以上からなる単層構造であってもよいし、同一組成又は異種組成の複数層からなる多層構造であってもよい。
The thicknesses of the electron injection layer and the electron transport layer are each preferably 500 nm or less from the viewpoint of lowering the driving voltage.
The thickness of the electron transport layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and still more preferably 10 nm to 100 nm. In addition, the thickness of the electron injection layer is preferably 0.1 nm to 200 nm, more preferably 0.2 nm to 100 nm, and still more preferably 0.5 nm to 50 nm.
The electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
−正孔ブロック層−
正孔ブロック層は、陽極側から発光層に輸送された正孔が、陰極側に通りぬけることを防止する機能を有する層である。本発明において、発光層と陰極側で隣接する有機化合物層として、正孔ブロック層を設けることができる。
正孔ブロック層を構成する有機化合物の例としては、BAlq等のアルミニウム錯体、トリアゾール誘導体、BCP等のフェナントロリン誘導体、等が挙げられる。正孔ブロック層の厚さとしては、1nm〜500nmであるのが好ましく、5nm〜200nmであるのがより好ましく、10nm〜100nmであるのが更に好ましい。
正孔ブロック層は、上述した材料の1種又は2種以上からなる単層構造であってもよいし、同一組成又は異種組成の複数層からなる多層構造であってもよい。
-Hole blocking layer-
The hole blocking layer is a layer having a function of preventing holes transported from the anode side to the light emitting layer from passing through to the cathode side. In the present invention, a hole blocking layer can be provided as an organic compound layer adjacent to the light emitting layer on the cathode side.
Examples of the organic compound constituting the hole blocking layer include aluminum complexes such as BAlq, triazole derivatives, phenanthroline derivatives such as BCP, and the like. The thickness of the hole blocking layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and still more preferably 10 nm to 100 nm.
The hole blocking layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
<保護層>
本発明において素子は保護層によって保護されていてもよい。保護層に含まれる材料としては、水分や酸素等の素子劣化を促進するものが素子内に入ることを抑止する機能を有しているものであればよい。
その具体例としては、In、Sn、Pb、Au、Cu、Ag、Al、Ti、Ni等の金属、MgO、SiO、SiO2、Al2O3、GeO、NiO、CaO、BaO、Fe2O3、Y2O3、TiO2等の金属酸化物、SiNx、SiNxOy等の金属窒化物、MgF2、LiF、AlF3、CaF2等の金属フッ化物、ポリエチレン、ポリプロピレン、ポリメチルメタクリレート、ポリイミド、ポリウレア、ポリテトラフルオロエチレン、ポリクロロトリフルオロエチレン、ポリジクロロジフルオロエチレン、クロロトリフルオロエチレンとジクロロジフルオロエチレンとの共重合体、テトラフルオロエチレンと少なくとも1種のコモノマーとを含むモノマー混合物を共重合させて得られる共重合体、共重合主鎖に環状構造を有する含フッ素共重合体、吸水率1%以上の吸水性物質、吸水率0.1%以下の防湿性物質等が挙げられる。
<Protective layer>
In the present invention, the element may be protected by a protective layer. As a material contained in the protective layer, any material may be used as long as it has a function of preventing materials that promote device deterioration such as moisture and oxygen from entering the device.
Specific examples thereof include metals such as In, Sn, Pb, Au, Cu, Ag, Al, Ti, and Ni, MgO, SiO, SiO 2 , Al 2 O 3 , GeO, NiO, CaO, BaO, and Fe 2 O. 3 , metal oxides such as Y 2 O 3 and TiO 2 , metal nitrides such as SiN x and SiN x O y , metal fluorides such as MgF 2 , LiF, AlF 3 and CaF 2 , polyethylene, polypropylene, polymethyl Monomer mixture containing methacrylate, polyimide, polyurea, polytetrafluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, tetrafluoroethylene and at least one comonomer A copolymer obtained by copolymerization of a copolymer having a cyclic structure in the copolymer main chain. Copolymer, 1% or more of the water absorbing water absorption material, water absorption less than 0.1% of moisture-proof material, and the like.
保護層の形成方法については、特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、MBE(分子線エピタキシ)法、クラスターイオンビーム法、イオンプレーティング法、プラズマ重合法(高周波励起イオンプレーティング法)、プラズマCVD法、レーザーCVD法、熱CVD法、ガスソースCVD法、コーティング法、印刷法、転写法を適用できる。 The method for forming the protective layer is not particularly limited, and for example, vacuum deposition, sputtering, reactive sputtering, MBE (molecular beam epitaxy), cluster ion beam, ion plating, plasma polymerization (high frequency) Excited ion plating method), plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, printing method, transfer method can be applied.
<封止>
本発明の有機電界発光素子は、封止容器を用いて素子全体を封止してもよい。
また、封止容器と発光素子の間の空間に水分吸収剤又は不活性液体を封入してもよい。水分吸収剤としては、特に限定されることはないが、例えば、酸化バリウム、酸化ナトリウム、酸化カリウム、酸化カルシウム、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、五酸化燐、塩化カルシウム、塩化マグネシウム、塩化銅、フッ化セシウム、フッ化ニオブ、臭化カルシウム、臭化バナジウム、モレキュラーシーブ、ゼオライト、酸化マグネシウム等を挙げることができる。不活性液体としては、特に限定されることはないが、例えば、パラフィン類、流動パラフィン類、パーフルオロアルカンやパーフルオロアミン、パーフルオロエーテル等のフッ素系溶剤、塩素系溶剤、シリコーンオイル類が挙げられる。
<Sealing>
The organic electroluminescent element of the present invention may be sealed entirely using a sealing container.
Further, a moisture absorbent or an inert liquid may be sealed in a space between the sealing container and the light emitting element. Although it does not specifically limit as a moisture absorber, For example, barium oxide, sodium oxide, potassium oxide, calcium oxide, sodium sulfate, calcium sulfate, magnesium sulfate, phosphorus pentoxide, calcium chloride, magnesium chloride, copper chloride Cesium fluoride, niobium fluoride, calcium bromide, vanadium bromide, molecular sieve, zeolite, magnesium oxide and the like. The inert liquid is not particularly limited, and examples thereof include fluorinated solvents such as paraffins, liquid paraffins, perfluoroalkanes, perfluoroamines, perfluoroethers, chlorinated solvents, and silicone oils. It is done.
本発明の有機電界発光素子は、陽極と陰極との間に直流(必要に応じて交流成分を含んでもよい)電圧(通常2ボルト〜15ボルト)、又は直流電流を通電することにより、発光を得ることができる。
本発明の有機電界発光素子の駆動方法については、特開平2−148687号、同6−301355号、同5−29080号、同7−134558号、同8−234685号、同8−241047号の各公報、特許第2784615号、米国特許5828429号、同6023308号の各明細書、等に記載の駆動方法を適用することができる。
The organic electroluminescent device of the present invention emits light by passing a direct current (which may include an alternating current component as necessary) voltage (usually 2 to 15 volts) or a direct current between the anode and the cathode. Obtainable.
The driving method of the organic electroluminescence device of the present invention is described in JP-A-2-148687, JP-A-6-301355, JP-A-5-29080, JP-A-7-134558, JP-A-8-234658, and JP-A-8-2441047. The driving method described in each publication, Japanese Patent No. 2784615, US Pat. Nos. 5,828,429, 6023308, and the like can be applied.
以下に本発明を実施例に基づき詳細に説明するが、本発明の実施の態様はこれらに限定されない。 Hereinafter, the present invention will be described in detail based on examples, but the embodiment of the present invention is not limited thereto.
(比較例)
洗浄したITO基板を蒸着装置に入れ、NPDを50nm蒸着し、この上にCBP及びCompound(1)(国際公開特許2004/108857号に記載の化合物)を10:1の質量比で40nm蒸着し、さらにこの上にBAlqを10nm、さらにこの上にAlqを30nm蒸着した。得られた有機薄膜上にパターニングしたマスク(発光面積が4mm×5mmとなる)を設置し、フッ化リチウムを3nm蒸着した後アルミニウムを60nm蒸着して比較例1の有機EL素子を作製した。得られた有機EL素子に直流定電圧
(5V)を印加したところ、発光が観測された。輝度300cd/m2で10時間発光させた。
(Comparative example)
The cleaned ITO substrate is put into a vapor deposition apparatus, NPD is vapor-deposited by 50 nm, and CBP and Compound (1) (compound described in International Patent Publication No. 2004/108857) are vapor-deposited by 40 nm at a mass ratio of 10: 1. Further, BAlq was deposited thereon to 10 nm, and Alq was further deposited thereon to 30 nm. A patterned mask (with a light emission area of 4 mm × 5 mm) was placed on the obtained organic thin film, and after 3 nm of lithium fluoride was deposited, 60 nm of aluminum was deposited to prepare an organic EL device of Comparative Example 1. When a DC constant voltage (5 V) was applied to the obtained organic EL element, light emission was observed. Light was emitted for 10 hours at a luminance of 300 cd / m 2 .
(実施例1)
比較例1において、Compound(1)の代わりに、本発明の化合物(1)を用いた以外は比較例1と同様にして実施例1の有機EL素子を作成した。得られた有機EL素子に直流定電圧(5V)を印加したところ、発光が観測された。輝度300cd/m2で10時間発光させたところ、比較例と比較して発光波長が短波であった。
Example 1
In Comparative Example 1, an organic EL device of Example 1 was prepared in the same manner as Comparative Example 1 except that Compound (1) of the present invention was used instead of Compound (1). When a DC constant voltage (5 V) was applied to the obtained organic EL element, light emission was observed. When light was emitted for 10 hours at a luminance of 300 cd / m 2 , the emission wavelength was shorter than that of the comparative example.
(実施例2)
比較例1において、Compound(1)の代わりに、本発明の化合物(101)を用いた以外は比較例1と同様にして実施例2の有機EL素子を作成した。得られた有機EL素子に直流定電圧(5V)を印加したところ、発光が観測された。輝度300cd/m2で10時間発光させたところ、比較例と比較して発光波長が短波であった。また実施例1に記載の素子と比較して外部量子効率は低かった。
(Example 2)
In Comparative Example 1, an organic EL device of Example 2 was prepared in the same manner as Comparative Example 1 except that the compound (101) of the present invention was used instead of Compound (1). When a DC constant voltage (5 V) was applied to the obtained organic EL element, light emission was observed. When light was emitted for 10 hours at a luminance of 300 cd / m 2 , the emission wavelength was shorter than that of the comparative example. In addition, the external quantum efficiency was lower than that of the device described in Example 1.
(比較例2)
洗浄したITO基板を蒸着装置に入れ、NPDを50nm蒸着し、この上にCBP及びCompound(79)(国際公開特許2004/108857号に記載の化合物)を10:1の質量比で40nm蒸着し、さらにこの上にBAlqを3nm、さらにこの上にAlqを30nm蒸着した。得られた有機薄膜上にパターニングしたマスク(発光面積が4mm×5mmとなる)を設置し、フッ化リチウムを3nm蒸着した後アルミニウムを60nm蒸着して比較例2の有機EL素子を作製した。得られた有機EL素子に電流密度500A/m2の直流定電流を通電したところ、発光が観測された。輝度200cd/m2で10時間発光させた。
(Comparative Example 2)
The cleaned ITO substrate is put in a vapor deposition apparatus, NPD is vapor-deposited by 50 nm, and CBP and Compound (79) (compound described in International Publication No. 2004/108857) are vapor-deposited by 40 nm at a mass ratio of 10: 1. Further, 3 nm of BAlq was deposited thereon, and 30 nm of Alq was further deposited thereon. A patterned mask (with a light emission area of 4 mm × 5 mm) was placed on the obtained organic thin film, lithium fluoride was deposited by 3 nm, and then aluminum was deposited by 60 nm to prepare an organic EL device of Comparative Example 2. When a DC constant current having a current density of 500 A / m 2 was passed through the obtained organic EL element, light emission was observed. Light was emitted for 10 hours at a luminance of 200 cd / m 2 .
(実施例3)
比較例1において、BAlqの代わりに、本発明の化合物(114)を用いた以外は比較例1と同様にして実施例3の有機EL素子を作成した。得られた有機EL素子に電流密度500A/m2の直流定電流を通電したところ、発光が観測された。輝度200cd/m2で10時間発光させたところ、比較例2と比較して駆動電圧が低く、電圧の上昇幅も小さかった。
(Example 3)
In Comparative Example 1, an organic EL device of Example 3 was prepared in the same manner as Comparative Example 1 except that the compound (114) of the present invention was used instead of BAlq. When a DC constant current having a current density of 500 A / m 2 was passed through the obtained organic EL element, light emission was observed. When light was emitted for 10 hours at a luminance of 200 cd / m 2 , the driving voltage was lower than that of Comparative Example 2, and the voltage increase was small.
同様に、他の本発明の化合物を用いても、発光性能が優れた発光素子を作製することができる。本発明の化合物は青〜緑の燐光発光が可能であり、該化合物を用いれば青〜緑の有機電界発光素子を作製することができる。 Similarly, a light-emitting element having excellent light-emitting performance can be manufactured using other compounds of the present invention. The compound of the present invention can emit blue to green phosphorescence, and a blue to green organic electroluminescence device can be produced by using the compound.
本発明の有機電界発光素子は、表示素子、ディスプレイ、バックライト、電子写真、照明光源、記録光源、露光光源、読み取り光源、標識、看板、インテリア、光通信等の分野に好適に使用できる。また本発明の化合物は、医療用途、蛍光増白剤、写真用材料、UV吸収材料、レーザー色素、記録メディア用材料、インクジェット用顔料、カラーフィルター用染料、色変換フィルター、分析用途等にも適用可能である。 The organic electroluminescent element of the present invention can be suitably used in the fields of display elements, displays, backlights, electrophotography, illumination light sources, recording light sources, exposure light sources, reading light sources, signs, signboards, interiors, optical communications, and the like. The compounds of the present invention are also applicable to medical uses, fluorescent brighteners, photographic materials, UV absorbing materials, laser dyes, recording media materials, inkjet pigments, color filter dyes, color conversion filters, analytical uses, etc. Is possible.
Claims (12)
一般式(IIB1)
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一般式(IIB1)
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JP5926785B2 (en) * | 2009-09-30 | 2016-05-25 | ユー・ディー・シー アイルランド リミテッド | Organic electroluminescence device |
JP5714379B2 (en) * | 2010-03-31 | 2015-05-07 | ユー・ディー・シー アイルランド リミテッド | Material for organic electroluminescent element, organic electroluminescent element using the same, and method for producing organic electroluminescent element |
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