JP4483554B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Manufacturing method of semiconductor light emitting device Download PDF

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JP4483554B2
JP4483554B2 JP2004348102A JP2004348102A JP4483554B2 JP 4483554 B2 JP4483554 B2 JP 4483554B2 JP 2004348102 A JP2004348102 A JP 2004348102A JP 2004348102 A JP2004348102 A JP 2004348102A JP 4483554 B2 JP4483554 B2 JP 4483554B2
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resin
mold
semiconductor light
light emitting
emitting device
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JP2006156861A (en
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英治 木庭
憲昭 古閑
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

本発明は、半導体素子を列状に搭載し、この半導体素子が樹脂封止金型により樹脂封止される半導体装置用フレームに関する。   The present invention relates to a semiconductor device frame in which semiconductor elements are mounted in a line and the semiconductor elements are resin-sealed by a resin-sealing mold.

半導体素子を搭載した半導体装置用フレームを樹脂封止金型に配置し、半導体素子を樹脂封止して樹脂封止部半導体装置を形成する際、樹脂充填用である金型のキャビティ内に溜まる空気による樹脂封止部のボイドが問題となる。   When a semiconductor device frame on which a semiconductor element is mounted is placed in a resin-sealed mold and the semiconductor element is resin-sealed to form a resin-encapsulated semiconductor device, the semiconductor device collects in the cavity of the mold for resin filling. The void of the resin sealing part by air becomes a problem.

このような問題を解決するために、キャビティ内に溜まる空気を外部に排出するためのエアーベントを金型に形成する方法が一般的に用いられている。特許文献１には、それぞれキャビティを有する上型と下型とから構成され、上型または下型の少なくとも一方に、外部からキャビティ内に封止用の樹脂を供給するための通路となるゲートと、ゲートの対向部近傍に、キャビティ内の空気を外部に排出するためのエアーベントとを設けた樹脂封止金型が記載されている。   In order to solve such a problem, a method of forming an air vent in a mold for discharging the air accumulated in the cavity to the outside is generally used. Patent Document 1 includes an upper mold and a lower mold each having a cavity, and a gate serving as a passage for supplying sealing resin into the cavity from the outside to at least one of the upper mold and the lower mold. In addition, there is described a resin-sealed mold provided with an air vent for discharging the air in the cavity to the outside in the vicinity of the facing portion of the gate.

上記のような上型および下型により構成される樹脂封止金型とは別に、凹凸などの複雑な形状を有する樹脂封止部を成型することができる樹脂封止金型がある。図２（ａ）および同図（ｂ）に示すように、この樹脂封止金型１１は、上型１２と、上型１２に対向配置された下型１４と、封止の際に上型１２および下型１４に挟持される二つの中型１３ａ，１３ｂとを備える。樹脂封止金型１１は、中型１３ａ，１３ｂのそれぞれの対面２０ａ同士を向かい合わせて型締めされる。この樹脂封止金型１１を型締めした際には、上型１２と中型１３ａ，１３ｂと下型１４とで、半導体装置用フレームの半導体素子が樹脂封止された樹脂封止部１０を成型するキャビティ１８が構成される。   In addition to the above-described resin molds constituted by the upper mold and the lower mold, there is a resin mold that can mold a resin-sealed portion having a complicated shape such as irregularities. As shown in FIG. 2A and FIG. 2B, the resin-sealed mold 11 includes an upper mold 12, a lower mold 14 disposed opposite to the upper mold 12, and an upper mold at the time of sealing. 12 and two middle molds 13a, 13b sandwiched between the lower mold 14 and the lower mold 14. The resin-sealed mold 11 is clamped with the facing surfaces 20a of the middle molds 13a and 13b facing each other. When the resin-sealed mold 11 is clamped, the resin-sealed portion 10 in which the semiconductor elements of the semiconductor device frame are resin-sealed is molded by the upper mold 12, the middle molds 13a and 13b, and the lower mold 14. A cavity 18 is formed.

この樹脂封止金型１１によって成型される半導体装置の一例として半導体発光装置がある。この半導体発光装置は、半導体素子の一例である半導体発光素子と、半導体発光素子から出射された光を集光し曲面を有するレンズ部と、リードと半導体発光素子を一体化して覆う台座部とを有し、レンズ部と台座部との接続部分が縮径した樹脂封止部１０が形成される。   An example of a semiconductor device molded by the resin-sealed mold 11 is a semiconductor light emitting device. The semiconductor light-emitting device includes a semiconductor light-emitting element that is an example of a semiconductor element, a lens unit that collects light emitted from the semiconductor light-emitting element and has a curved surface, and a pedestal unit that integrally covers the lead and the semiconductor light-emitting element. And a resin sealing portion 10 in which the connecting portion between the lens portion and the pedestal portion has a reduced diameter is formed.

この樹脂封止金型１１により樹脂封止部１０が成型される従来の半導体発光装置用フレームを図６（ａ）および同図（ｂ）に示す。図６（ａ）および同図（ｂ）に示すように、従来の半導体発光装置用フレーム１３０は、一対のサイドフレーム１４０と、半導体発光素子が搭載されるダイパッド１３１と一端がダイパッド１３１に接続され他端がサイドフレーム１４０に接続されたリード１３２とを備える搭載部１３３と、一対のサイドフレーム１４０に両端が接続されたサポートバー１３４とを備え、搭載部１３３とサポートバー１３４とが交互に、サイドフレーム１４０の長手方向に列状に配置されている。   A conventional frame for a semiconductor light emitting device in which the resin sealing portion 10 is molded by the resin sealing mold 11 is shown in FIGS. 6 (a) and 6 (b). As shown in FIGS. 6A and 6B, a conventional semiconductor light emitting device frame 130 has a pair of side frames 140, a die pad 131 on which the semiconductor light emitting elements are mounted, and one end connected to the die pad 131. The mounting portion 133 includes a lead 132 having the other end connected to the side frame 140 and a support bar 134 having both ends connected to the pair of side frames 140. The mounting portion 133 and the support bar 134 are alternately arranged. The side frames 140 are arranged in a row in the longitudinal direction.

この従来の半導体発光装置用フレーム１３０のダイパッド１３１に搭載された半導体発光素子を上述した中型１３ａ，１３ｂを備える樹脂封止金型１１で樹脂封止する方法について図７および図８に基づいて説明する。図７は従来の半導体発光装置用フレーム１３０が樹脂封止される様子を説明する平面図、図８は図７のＳ−Ｓ線断面図である。なお、図７では、上型１２は省略されている。   A method of resin-sealing the semiconductor light-emitting element mounted on the die pad 131 of the conventional frame 130 for semiconductor light-emitting devices with the resin-sealing mold 11 including the above-described middle molds 13a and 13b will be described with reference to FIGS. To do. FIG. 7 is a plan view for explaining a state in which the conventional semiconductor light emitting device frame 130 is resin-sealed, and FIG. 8 is a cross-sectional view taken along the line S-S in FIG. In FIG. 7, the upper mold 12 is omitted.

まず、下型１４および中型１３ａ，１３ｂを嵌合させて下中型とし、従来の半導体発光装置用フレーム１３０に半導体発光素子を搭載して半導体発光素子下向きで下中型にセットする。次に上型１２を上型ベース（図示せず）に、下型ベース（図示せず）に下中型をセットする。そして上型ベースを下型ベースに載置して型締めした後、溶融した樹脂をゲート３５，３６から中型１３ａ，１３ｂ内に流入させ、キャビティ１８内に充填させる。樹脂が硬化した後、上型ベースと下型ベースとを分離し、下中型を下型ベースから取り外した後、中型１３ａ，１３ｂの対面同士を型開きして、半導体発光装置用フレーム１３０を取り出す。この半導体発光装置用フレーム１３０上には、半導体発光素子が樹脂により封止され、縮径部を有する樹脂封止部が列状に形成されている。   First, the lower mold 14 and the middle molds 13a and 13b are fitted to form a lower middle mold, and a semiconductor light emitting element is mounted on a conventional frame 130 for a semiconductor light emitting device, and set to the lower middle mold with the semiconductor light emitting element facing downward. Next, the upper mold 12 is set on the upper mold base (not shown), and the lower middle mold is set on the lower mold base (not shown). Then, after the upper mold base is placed on the lower mold base and clamped, the molten resin flows into the middle molds 13 a and 13 b from the gates 35 and 36 and is filled in the cavity 18. After the resin is cured, the upper mold base and the lower mold base are separated, the lower middle mold is removed from the lower mold base, the facing faces of the middle molds 13a and 13b are opened, and the semiconductor light emitting device frame 130 is taken out. . On the semiconductor light emitting device frame 130, semiconductor light emitting elements are sealed with resin, and resin sealing portions having a reduced diameter portion are formed in a row.

このように、上型１２および下型１４に挟持される二つの中型１３ａ，１３ｂが樹脂封止金型１１に備えられたことにより、縮径部などを有する樹脂封止部を樹脂成型することができる。
特開平７−１７１８６２号公報 As described above, the resin-sealed mold 11 is provided with the two middle molds 13a and 13b sandwiched between the upper mold 12 and the lower mold 14, thereby resin-molding the resin-sealed portion having a reduced diameter portion or the like. Can do.
JP-A-7-171862

しかしながら、上述した樹脂封止金型１１の中型の対面２０ａは完全に密着しておらず、１０μｍ程度の隙間５０が存在するので、ゲート３５，３６から射出される溶融樹脂の射出圧力がわずかでも異なる場合、ゲート３５から射出されてキャビティＡ内へ流れ込んだ溶融樹脂は、ゲートの最も近傍にあるキャビティＡ内を充填した後、余剰樹脂となってこの隙間５０を流れ、充填が完了していない隣接するキャビティＢ内へ流入してしまう。このとき、キャビティＢ内を充填する別のゲート３６から射出された樹脂と上述した余剰樹脂とは、このキャビティＢ内で対峙してしまうため、キャビティＢ内に空気が残留してしまい、樹脂封止部にボイド６０を発生させてしまう。このようなボイド６０は樹脂成型後の樹脂封止部の美観を損ね、製品としての価値を下げてしまう原因となる。   However, since the above-described medium facing surface 20a of the resin-sealed mold 11 is not completely in close contact, and there is a gap 50 of about 10 μm, the injection pressure of the molten resin injected from the gates 35 and 36 is slight. In a different case, the molten resin injected from the gate 35 and flowing into the cavity A fills the cavity A nearest to the gate and then flows into the gap 50 as an excess resin, and the filling is not completed. It will flow into the adjacent cavity B. At this time, the resin injected from another gate 36 filling the cavity B and the above-described surplus resin face each other in the cavity B, so that air remains in the cavity B, and the resin sealing is performed. The void 60 is generated at the stop. Such a void 60 impairs the aesthetics of the resin sealing part after resin molding, and causes a reduction in the value of the product.

そこで、本発明は、上記の問題点に鑑みて、半導体装置用フレームに搭載された半導体素子を樹脂封止する樹脂封止金型のキャビティ内への余剰樹脂の侵入を防ぎ、半導体装置の樹脂封止部にボイドが生じることを防ぐ半導体装置用フレームを提供することを目的とする。   Therefore, in view of the above problems, the present invention prevents the invasion of surplus resin into the cavity of a resin-sealing mold for resin-sealing a semiconductor element mounted on a frame for a semiconductor device. An object of the present invention is to provide a frame for a semiconductor device that prevents voids from being generated in a sealing portion.

本発明の半導体装置用フレームは、上型と、前記上型に対向配置された下型と、封止の際に前記上型および前記下型に挟持される複数の中型とを備える樹脂封止金型で半導体素子を樹脂封止して樹脂封止部が成型される半導体装置に用いられ、一対のサイドフレームと、前記半導体素子が搭載されるダイパッドと一端が前記ダイパッドに接続され他端が前記サイドフレームに接続されたリードとを備える搭載部と、前記一対のサイドフレームに両端が接続されたサポートバーとを備え、前記搭載部と前記サポートバーとが交互に、前記サイドフレームの長手方向に列状に配置された半導体装置用フレームであって、前記サポートバーには、前記樹脂封止金型によって型締めした際に、前記中型の対面同士が合わさる位置に、貫通孔が設けられていることを特徴とする。   A frame for a semiconductor device according to the present invention includes an upper mold, a lower mold opposed to the upper mold, and a plurality of middle molds sandwiched between the upper mold and the lower mold at the time of sealing. Used in a semiconductor device in which a semiconductor element is resin-sealed with a mold and a resin-sealed portion is molded. A pair of side frames, a die pad on which the semiconductor element is mounted, one end is connected to the die pad, and the other end is A mounting portion having a lead connected to the side frame; and a support bar having both ends connected to the pair of side frames, wherein the mounting portion and the support bar are alternately arranged in a longitudinal direction of the side frame. The support bar is provided with a through hole at a position where the opposite faces of the middle mold are joined together when the mold is clamped by the resin-sealed mold. And said that you are.

本発明の半導体装置用フレームによれば、半導体装置用フレームに形成された貫通孔によって、樹脂封止部を形成する樹脂封止金型の所定のキャビティを充填した後の余剰樹脂は隣接する別のキャビティ内へと流れ込むことなく貫通孔へと向かうので、このキャビティ内への余剰樹脂の侵入を防ぎ、半導体装置の樹脂封止部にボイドが生じることを防ぐことができる。   According to the semiconductor device frame of the present invention, the surplus resin after filling the predetermined cavity of the resin sealing mold for forming the resin sealing portion with the through hole formed in the semiconductor device frame is different from the adjacent resin. Since it goes to the through hole without flowing into the cavity, it is possible to prevent the excessive resin from entering the cavity and prevent the void from being generated in the resin sealing portion of the semiconductor device.

本願の第１の発明は、上型と、上型に対向配置された下型と、封止の際に上型および下型に挟持される複数の中型とを備える樹脂封止金型で半導体素子を樹脂封止して樹脂封止部が成型される半導体装置に用いられ、一対のサイドフレームと、半導体素子が搭載されるダイパッドと一端がダイパッドに接続され他端がサイドフレームに接続されたリードとを備える搭載部と、一対のサイドフレームに両端が接続されたサポートバーとを備え、搭載部とサポートバーとが交互に、サイドフレームの長手方向に列状に配置された半導体装置用フレームであって、サポートバーには、樹脂封止金型によって型締めした際に、中型の対面同士が合わさる位置に、貫通孔が設けられていることを特徴とする。   A first invention of the present application is a resin-encapsulated mold comprising an upper mold, a lower mold opposed to the upper mold, and a plurality of middle molds sandwiched between the upper mold and the lower mold at the time of sealing. Used in a semiconductor device in which an element is resin-sealed and a resin-sealed portion is molded, a pair of side frames, a die pad on which a semiconductor element is mounted, one end connected to the die pad, and the other end connected to the side frame A frame for a semiconductor device, comprising: a mounting portion including leads; and a support bar having both ends connected to a pair of side frames, wherein the mounting portions and the support bar are alternately arranged in a row in the longitudinal direction of the side frame. The support bar is characterized in that a through-hole is provided at a position where the opposite faces of the middle mold meet when the mold is clamped with a resin-sealed mold.

半導体素子が搭載されるダイパッドと一端がダイパッドに接続され他端がサイドフレームに接続されたリードとを備える搭載部と、一対のサイドフレームに両端が接続されたサポートバーとが交互に、サイドフレームの長手方向に列状に配置された半導体装置用フレームを、上型と、上型に対向配置された下型と、封止の際に上型および下型に挟持される複数の中型とを備える樹脂封止金型に配置して半導体素子を樹脂封止する際、一方のゲートから射出された溶融樹脂は、樹脂封止部を形成する樹脂封止金型のキャビティを充填した後、余剰樹脂となる。ゲートから射出される溶融樹脂の射出圧力がわずかでも異なると、キャビティ内を充填する速さが異なるため、この余剰樹脂は、中型の対面同士が向かい合わさる位置にできるわずかな隙間へと流れ出す。一方、隣接するキャビティにも他方のゲートから射出された溶融樹脂が流入しており、この隣接するキャビティ内の圧力は高くなっている。ここで本発明の半導体装置用フレームのサポートバーには、中型の対面同士が合わさる位置、つまり前述した隙間上に貫通孔が設けられているので、この隙間に流れ出した余剰樹脂は、他方のゲートから射出された溶融樹脂により内部の圧力が高くなった隣接するキャビティ方向ではなく、より圧力の低い貫通孔の方へと向かって流れ出す。この間に、隣接するキャビティ内も他方のゲートから射出された溶融樹脂によってキャビティ内の空気を排除しながら完全に充填される。   A side frame alternately includes a mounting portion having a die pad on which a semiconductor element is mounted, a lead having one end connected to the die pad and the other end connected to the side frame, and a support bar having both ends connected to the pair of side frames. A frame for a semiconductor device arranged in a row in the longitudinal direction of the upper die, a lower die opposed to the upper die, and a plurality of middle dies held between the upper die and the lower die at the time of sealing. When the semiconductor element is resin-sealed by placing it in the resin-sealing mold provided, the molten resin injected from one gate is surplus after filling the cavity of the resin-sealing mold that forms the resin sealing portion It becomes resin. If the injection pressure of the molten resin injected from the gate is slightly different, the filling speed in the cavity is different, so that this excess resin flows out to a slight gap that can be positioned where the opposite faces of the middle mold face each other. On the other hand, the molten resin injected from the other gate also flows into the adjacent cavity, and the pressure in the adjacent cavity is high. Here, the support bar of the semiconductor device frame according to the present invention is provided with a through hole in the position where the opposite faces of the medium size meet each other, that is, the above-described gap. Instead of flowing toward the adjacent cavity where the internal pressure is increased by the molten resin injected from, it flows toward the through-hole having a lower pressure. During this time, the adjacent cavities are completely filled with the molten resin injected from the other gate while excluding air in the cavities.

このように、先にキャビティ内を充填した樹脂が余剰樹脂となって、複数の中型の対面同士が合わさる位置にできる隙間へと流れ出しても、この余剰樹脂は隣接するキャビティ内へ流入することなく貫通孔の方へと流れ、この間に隣接するキャビティ内も他方のゲートから射出された樹脂により空気を排除しながら完全に充填されるので、樹脂封止部にボイドが発生することを防止できる。従って、このような半導体装置用フレームを用いれば、製品としての美観や、価値を損ねることのない半導体装置を成型することができる。   In this way, even if the resin previously filled in the cavity becomes surplus resin and flows into the gap where the facing surfaces of the plurality of medium molds can be combined, the surplus resin does not flow into the adjacent cavity. Since it flows toward the through hole and the inside of the adjacent cavity is completely filled with the resin injected from the other gate while excluding air, it is possible to prevent the occurrence of voids in the resin sealing portion. Therefore, by using such a semiconductor device frame, it is possible to mold a semiconductor device that does not impair the beauty and value of the product.

本願の第２の発明は、本願第１の発明において、貫通孔は、中型の対面同士が合わさる位置を中心として対称に形成されたことを特徴とする。   According to a second invention of the present application, in the first invention of the present application, the through holes are formed symmetrically with respect to a position where the medium-sized facing surfaces meet each other.

貫通孔を、複数の中型の対面同士が合わさる位置を中心として対称に形成されたことにより、余剰樹脂はこの貫通孔内の空間に均等に抜けていく。従って、複数の中型の対面同士が合わさる位置にできる隙間内で圧力の偏りが発生して、余剰樹脂が隣接するキャビティ内へ流れ込むことを防止することができる。   By forming the through-holes symmetrically around the position where a plurality of medium-sized facing surfaces meet each other, surplus resin escapes evenly into the spaces in the through-holes. Therefore, it is possible to prevent a pressure bias from occurring in a gap that can be formed at a position where the facing surfaces of a plurality of medium molds meet, and the excess resin flowing into adjacent cavities.

（実施の形態１）
以下、図を用いて本発明の実施の形態における半導体装置として半導体発光装置を、半導体素子として半導体発光素子を、また、半導体装置用フレームとして半導体発光装置用フレームを例に説明する。図１は本発明の実施の形態における半導体発光装置用フレームを示す図であり、（ａ）は全体図、（ｂ）は（ａ）のＡ部拡大図である。図２は本発明の実施の形態における樹脂封止金型の図であり、（ａ）は断面図、（ｂ）はＢ部斜視図である。図３は本発明の実施の形態における半導体発光装置を示す図であり、（ａ）は平面図、（ｂ）は断面図である。 (Embodiment 1)
Hereinafter, a semiconductor light emitting device as a semiconductor device, a semiconductor light emitting element as a semiconductor element, and a semiconductor light emitting device frame as a semiconductor device frame will be described as an example with reference to the drawings. 1A and 1B are diagrams showing a semiconductor light emitting device frame according to an embodiment of the present invention. FIG. 1A is an overall view, and FIG. 1B is an enlarged view of a portion A in FIG. 2A and 2B are views of a resin-sealing mold according to an embodiment of the present invention, in which FIG. 2A is a cross-sectional view and FIG. 3A and 3B are diagrams showing a semiconductor light emitting device according to an embodiment of the present invention, where FIG. 3A is a plan view and FIG. 3B is a cross-sectional view.

半導体発光装置用フレーム３０は、材料としてＣｕ−Ｎｉ−Ｓｎ合金が用いられ、一対のサイドフレーム４０と、半導体発光素子が搭載されるダイパッド３１と一端がダイパッド３１に接続され他端がサイドフレーム４０に接続されたリード３２とを備える搭載部３３と、一対のサイドフレーム４０に両端が接続されたサポートバー３４とを備え、搭載部３３とサポートバー３４とが交互に、サイドフレーム４０の長手方向に列状に配置されている。   The semiconductor light emitting device frame 30 is made of a Cu—Ni—Sn alloy as a material, a pair of side frames 40, a die pad 31 on which a semiconductor light emitting element is mounted, one end connected to the die pad 31, and the other end to the side frame 40. And a support bar 34 having both ends connected to the pair of side frames 40. The mounting part 33 and the support bar 34 are alternately arranged in the longitudinal direction of the side frame 40. Are arranged in rows.

サポートバー３４の中央部、つまり、後述する樹脂封止金型の中型の対面同士が合わさる位置には楕円状の貫通孔３７が設けられている。また、この貫通孔３７は、境界Ｉを中心に対称に形成されている。貫通孔３７により、樹脂封止部１０を樹脂封止金型で成型する際、樹脂封止部１０を成型するキャビティ内に溜まる空気を外部に排出することができる。   An elliptical through-hole 37 is provided at the center of the support bar 34, that is, at a position where the opposite faces of the middle mold of the resin-sealed mold described later are brought together. The through-hole 37 is formed symmetrically about the boundary I. Through the through-hole 37, when the resin sealing portion 10 is molded with a resin sealing mold, air accumulated in the cavity for molding the resin sealing portion 10 can be discharged to the outside.

本実施形態の半導体発光装置は、半導体発光装置用フレーム３０の搭載部３３にダイボンディングされた半導体発光素子６４を覆う透光性の樹脂封止部１０を備えている。樹脂封止部１０は、半導体発光素子６４から出射された光を集光するレンズ部６８と、リード３２と半導体発光素子６４を一体化して覆う矩形状の台座部６９とから構成されている。レンズ部６８は半円状の曲面６６を有しており、このレンズ部６８と台座部６９との接続部分には縮径部６７が形成される。このような形状を有する半導体発光装置により、半導体発光素子６４から側方に出射した光を無駄なく曲面６６で全反射させ、主光取り出し方向Ｆへ集光して輝度を向上させることができる。   The semiconductor light emitting device of this embodiment includes a translucent resin sealing portion 10 that covers the semiconductor light emitting element 64 die-bonded to the mounting portion 33 of the semiconductor light emitting device frame 30. The resin sealing portion 10 includes a lens portion 68 that collects light emitted from the semiconductor light emitting element 64, and a rectangular pedestal portion 69 that integrally covers the lead 32 and the semiconductor light emitting element 64. The lens portion 68 has a semicircular curved surface 66, and a reduced diameter portion 67 is formed at a connecting portion between the lens portion 68 and the pedestal portion 69. With the semiconductor light emitting device having such a shape, the light emitted from the semiconductor light emitting element 64 to the side can be totally reflected by the curved surface 66 without being wasted and condensed in the main light extraction direction F to improve the luminance.

本実施形態の半導体発光装置用フレーム３０の半導体発光素子を樹脂封止して樹脂封止部１０を成型する樹脂封止金型１１は、上型１２と、上型１２に対向配置された下型１４と、封止の際に上型１２および下型１４に挟持される２つの中型１３ａ，１３ｂとを備える。また、下型１４には、凸レンズ形成ピン１５とガイドピン１６とが設けられている。   A resin-sealed mold 11 for molding a resin-sealed portion 10 by resin-sealing a semiconductor light-emitting element of a frame 30 for a semiconductor light-emitting device according to the present embodiment is provided with an upper mold 12 and a lower mold 12 facing each other. A mold 14 and two middle molds 13a and 13b sandwiched between the upper mold 12 and the lower mold 14 at the time of sealing are provided. The lower mold 14 is provided with a convex lens forming pin 15 and a guide pin 16.

上型１２および下型１４は、図示しない昇降装置によって上下方向に移動することができる。また、中型１３ａ，１３ｂは、樹脂封止する際、それぞれの対面２０ａを向かい合わせて型締めされるが、この中型１３ａ，１３ｂの対面同士２０ａは密着しておらず、１０μｍ程度の隙間５０が存在する。この隙間５０を境に、中型１３ａ，１３ｂはそれぞれ図示しない手段によって水平方向に移動することができる。また、この樹脂封止金型１１は、上型１２と中型１３ａ，１３ｂと下型１４とで、半導体発光装置用フレーム３０の半導体発光素子６４が樹脂封止された樹脂封止部１０を成型するキャビティ１８が構成される。   The upper mold 12 and the lower mold 14 can be moved in the vertical direction by a lifting device (not shown). Further, when the middle molds 13a and 13b are sealed with resin, the facing surfaces 20a face each other and the molds are clamped. However, the facing surfaces 20a of the middle molds 13a and 13b are not in close contact with each other, and a gap 50 of about 10 μm is formed. Exists. The middle molds 13a and 13b can be moved in the horizontal direction by means (not shown) with the gap 50 as a boundary. The resin-sealed mold 11 is formed by molding the resin-sealed portion 10 in which the semiconductor light-emitting element 64 of the semiconductor light-emitting device frame 30 is resin-sealed by the upper mold 12, the middle molds 13a and 13b, and the lower mold 14. A cavity 18 is formed.

凸レンズ形成ピン１５は、下型１４のキャビティ１８に位置する面に設けられた貫通孔により挿通されている。凸レンズ形成ピン１５は、先端に凹部が形成されており、この凹部により、樹脂封止部１０のレンズ部６８内部の凸レンズ部１９が形成される。   The convex lens forming pin 15 is inserted through a through hole provided in a surface located in the cavity 18 of the lower mold 14. The convex lens forming pin 15 has a concave portion at the tip, and the concave lens portion 19 forms the convex lens portion 19 inside the lens portion 68 of the resin sealing portion 10.

ガイドピン１６は、半導体発光装置用フレーム３０と樹脂封止金型１１の位置決めを行うピンである。このガイドピン１６により、半導体発光素子６４を覆う位置に正確に樹脂封止部１０を成型することができる。   The guide pin 16 is a pin for positioning the semiconductor light emitting device frame 30 and the resin sealing mold 11. With this guide pin 16, the resin sealing portion 10 can be accurately molded at a position covering the semiconductor light emitting element 64.

次に、半導体発光装置用フレーム３０に搭載された半導体発光素子６４を樹脂封止金型１１で樹脂封止する方法について図４および図５に基づいて説明する。図４は半導体発光装置用フレーム３０が樹脂封止される様子を説明する平面図である。図５は図４のＴ−Ｔ線断面図である。   Next, a method of resin-sealing the semiconductor light-emitting element 64 mounted on the semiconductor light-emitting device frame 30 with the resin-sealing mold 11 will be described with reference to FIGS. FIG. 4 is a plan view for explaining how the semiconductor light emitting device frame 30 is sealed with resin. 5 is a cross-sectional view taken along line TT in FIG.

まず、下型１４および中型１３ａ，１３ｂを嵌合させて下中型とする。次に、ダイパッド３１に半導体発光素子６４をダイボンディングして搭載した半導体発光装置用フレーム３０を、半導体発光素子６４を下向きで中型１３ａ，１３ｂにセットする。次に上型１２を上型ベース（図示せず）に、下中型を下型ベース（図示せず）にセットする。そして上型ベースを下型ベースに載置して型締めした後、溶融した樹脂をゲート３５，３６から中型１３ａ，１３ｂ内に流入させ、キャビティ１８内に充填させる。   First, the lower mold 14 and the middle molds 13a and 13b are fitted to form a lower middle mold. Next, the semiconductor light emitting device frame 30 having the semiconductor light emitting element 64 mounted on the die pad 31 by die bonding is set to the middle molds 13a and 13b with the semiconductor light emitting element 64 facing downward. Next, the upper mold 12 is set on the upper mold base (not shown), and the lower middle mold is set on the lower mold base (not shown). Then, after the upper mold base is placed on the lower mold base and clamped, the molten resin flows into the middle molds 13 a and 13 b from the gates 35 and 36 and is filled in the cavity 18.

図５に示すように、ゲート３５から射出された溶融樹脂は（図５中矢印Ｐ）、樹脂封止金型１１のキャビティ１８を充填し始める。また、別のゲート３６から射出された溶融樹脂（図５中矢印Ｒ）は、キャビティ１８に隣接するキャビティ１８’を充填し始める。このとき、ゲート３５，３６から射出される溶融樹脂の射出圧力がわずかでも異なると、キャビティ１８，１８’内を充填する速さが異なるため、キャビティ１８を完全に充填した後の溶融樹脂は余剰樹脂（図５中矢印Ｑ）となり、隙間５０に流れ出す。このとき、キャビティ１８’はゲート３６から射出された溶融樹脂によってかなり充填されており、キャビティ１８’内の圧力も高くなっている。そこで、キャビティ１８から流れ出た余剰樹脂は、キャビティ１８’内よりも圧力の低い貫通孔３７の方へと向かって流れ出す。この間に、充填が遅れていたキャビティ１８’内もゲート３６から射出された溶融樹脂によってキャビティ１８’内の空気を排除しながら完全に充填される。従って、キャビティ１８およびキャビティ１８’には空気溜まりが残留することなく、ボイドのない樹脂封止部１０を成型することができる。   As shown in FIG. 5, the molten resin injected from the gate 35 (arrow P in FIG. 5) begins to fill the cavity 18 of the resin sealing mold 11. Also, the molten resin injected from another gate 36 (arrow R in FIG. 5) begins to fill the cavity 18 ′ adjacent to the cavity 18. At this time, if the injection pressure of the molten resin injected from the gates 35 and 36 is slightly different, the filling speed in the cavities 18 and 18 ′ is different, so that the molten resin after completely filling the cavities 18 is excessive. Resin (arrow Q in FIG. 5) flows into the gap 50. At this time, the cavity 18 ′ is considerably filled with the molten resin injected from the gate 36, and the pressure in the cavity 18 ′ is also high. Therefore, the surplus resin that has flowed out of the cavity 18 flows toward the through hole 37 having a lower pressure than in the cavity 18 '. During this time, the cavity 18 ′, which has been delayed in filling, is completely filled with the molten resin injected from the gate 36 while excluding air in the cavity 18 ′. Therefore, the resin sealing part 10 without voids can be molded without any air pool remaining in the cavity 18 and the cavity 18 ′.

樹脂が硬化した後、上型ベースと下型ベースとを分離し、下中型を下型ベースから取り外した後、中型１３ａ，１３ｂを、対面２０ａを境に左右に開いて半導体発光装置用フレーム３０を取り出す。この半導体発光装置用フレーム３０上には、半導体発光素子６４が樹脂により封止され、縮径部６７を有する樹脂封止部１０が列状に形成されている。これを、リード３２の部分で切断し、一つずつ分離させることにより半導体発光装置が得られる。なお、隙間５０に形成され付着したバリは、ブラスト工程により取り除く。   After the resin is cured, the upper mold base and the lower mold base are separated, the lower middle mold is removed from the lower mold base, and then the middle molds 13a and 13b are opened to the left and right with the facing surface 20a as a boundary, and the semiconductor light emitting device frame 30 Take out. On the semiconductor light emitting device frame 30, the semiconductor light emitting elements 64 are sealed with resin, and the resin sealing portions 10 having the reduced diameter portions 67 are formed in a row. The semiconductor light emitting device is obtained by cutting this at the portion of the lead 32 and separating them one by one. It should be noted that the burrs formed in and adhered to the gap 50 are removed by a blast process.

以上のように、本実施形態の半導体発光装置用フレーム３０によれば、先にキャビティ１８内を充填した溶融樹脂が余剰樹脂となって隙間５０へと流れ出しても、この余剰樹脂は隣接するキャビティ１８’内へ流れ込むことなく、貫通孔３７の方へと流れ、この間に隣接するキャビティ１８’内も他方のゲート３６から射出された樹脂により空気を排除しながら完全に充填されるので、ボイドのない半導体発光装置の樹脂封止部１０を成型することができる。また、本実施形態の半導体発光装置用フレーム３０によれば、貫通孔３７は、境界Ｉを中心として対称に設けられているので、余剰樹脂はこの貫通孔３７から均等に抜けていく。従って、隙間５０内に圧力が偏る部分を生じることなく余剰樹脂が貫通孔３７から抜けて行くので、余剰樹脂が隣接するキャビティ１８’内へ流れ込むことを二重に防止することができる。従って、ボイドがなく、製品としての美観や、価値を損ねることのない樹脂封止部１０が成型された半導体発光装置を提供することができる。   As described above, according to the semiconductor light emitting device frame 30 of the present embodiment, even if the molten resin previously filled in the cavity 18 becomes surplus resin and flows out into the gap 50, this surplus resin remains in the adjacent cavity. Since it flows toward the through-hole 37 without flowing into 18 ', the inside of the adjacent cavity 18' is completely filled with the resin injected from the other gate 36 while excluding air. It is possible to mold the resin sealing portion 10 of the semiconductor light emitting device that is not present. Further, according to the semiconductor light emitting device frame 30 of the present embodiment, the through holes 37 are provided symmetrically with the boundary I as the center, so that the excess resin is evenly removed from the through holes 37. Therefore, since the surplus resin flows out of the through hole 37 without generating a portion where the pressure is biased in the gap 50, it is possible to prevent the surplus resin from flowing into the adjacent cavity 18 '. Therefore, it is possible to provide a semiconductor light emitting device in which the resin sealing portion 10 is molded without any voids, and has a beautiful appearance as a product and does not impair the value.

本発明の半導体装置用フレームは、半導体装置用フレームに搭載された半導体素子を樹脂封止する樹脂封止金型のキャビティ内への余剰樹脂の侵入を防ぎ、半導体装置の樹脂封止部にボイドが生じることを防ぐので、半導体素子を列状に搭載し、この半導体素子を樹脂封止金型により縮径部などの複雑な形状を有する樹脂封止部を樹脂封止する際の半導体装置用フレームとして有用である。   The frame for a semiconductor device according to the present invention prevents excess resin from entering the cavity of a resin-sealed mold for resin-sealing a semiconductor element mounted on the semiconductor device frame, and voids are formed in the resin-sealed portion of the semiconductor device. For semiconductor devices when semiconductor elements are mounted in a line and resin-sealed resin-sealed parts having complicated shapes such as reduced diameter parts are resin-sealed by resin-sealed molds. Useful as a frame.

本発明の実施の形態における半導体発光装置用フレームを示す図であり、（ａ）は全体図、（ｂ）は（ａ）のＡ部拡大図It is a figure which shows the flame | frame for semiconductor light-emitting devices in embodiment of this invention, (a) is a general view, (b) is the A section enlarged view of (a). 本発明の実施の形態における樹脂封止金型を示す図であり、（ａ）は断面図、（ｂ）はＢ部斜視図It is a figure which shows the resin sealing metal mold | die in embodiment of this invention, (a) is sectional drawing, (b) is B section perspective view 本発明の実施の形態における半導体発光装置を示す図であり、（ａ）は平面図、（ｂ）は断面図It is a figure which shows the semiconductor light-emitting device in embodiment of this invention, (a) is a top view, (b) is sectional drawing. 本発明の実施の形態における半導体発光装置用フレームが樹脂封止される様子を説明する平面図The top view explaining a mode that the flame | frame for semiconductor light-emitting devices in embodiment of this invention is resin-sealed 図４のＴ−Ｔ線断面図TT sectional view of FIG. 従来の半導体発光装置用フレームを示す図であり、（ａ）は全体図、（ｂ）は（ａ）のＡ部拡大図It is a figure which shows the flame | frame for conventional semiconductor light-emitting devices, (a) is a general view, (b) is the A section enlarged view of (a). 従来の半導体発光装置用フレームが樹脂封止される様子を説明する平面図Plan view for explaining a state in which a conventional frame for a semiconductor light emitting device is sealed with resin 図７のＳ−Ｓ線断面図SS sectional view of FIG.

符号の説明Explanation of symbols

１０ 樹脂封止部
１１ 樹脂封止金型
１２ 上型
１３ａ，１３ｂ 中型
１４ 下型
１５ 凸レンズ形成ピン
１６ ガイドピン
１８，１８’ キャビティ
１９ 凸レンズ部
２０ａ 対面
３０ 半導体発光装置用フレーム
３１ ダイパッド
３２ リード
３３ 搭載部
３４ サポートバー
３５，３６ ゲート
３７ 貫通孔
４０ サイドフレーム
５０ 隙間
６０ ボイド
６４ 半導体発光素子
６６ 曲面
６７ 縮径部
６８ レンズ部
６９ 台座部 DESCRIPTION OF SYMBOLS 10 Resin sealing part 11 Resin sealing metal mold | die 12 Upper mold | type 13a, 13b Middle mold | type 14 Lower mold | type 15 Convex lens formation pin 16 Guide pin 18, 18 'Cavity 19 Convex lens part 20a Face-to-face 30 Semiconductor light emitting device frame 31 Die pad 32 Lead 33 Mount Part 34 support bar 35, 36 gate 37 through hole 40 side frame 50 gap 60 void 64 semiconductor light emitting element 66 curved surface 67 reduced diameter part 68 lens part 69 pedestal part

Claims (2)

上型と、前記上型に対向配置された下型と、封止の際に前記上型および前記下型に挟持される複数の中型とによって半導体発光装置の樹脂封止部を成型するキャビティが構成される樹脂封止金型で半導体発光素子を搭載したフレームを樹脂封止する半導体発光装置の製造方法であって、
前記フレームは、一対のサイドフレームと、前記半導体発光素子が搭載されるダイパッドと一端が前記ダイパッドに接続され他端が前記サイドフレームに接続されたリードとを備える搭載部と、前記一対のサイドフレームに両端が接続されたサポートバーとを備え、前記搭載部と前記サポートバーとが交互に、前記サイドフレームの長手方向に列状に配置され、
前記サポートバーには、前記樹脂封止金型によって型締めした際に、前記中型の対面同士が合わさる位置に、貫通孔が設けられ、樹脂封止の際にキャビティ内を充填した溶融樹脂が余剰樹脂となった場合に前記貫通孔に流れることを特徴とする半導体発光装置の製造方法。 A cavity for molding a resin sealing portion of a semiconductor light emitting device by an upper mold, a lower mold disposed opposite to the upper mold, and a plurality of middle molds sandwiched between the upper mold and the lower mold at the time of sealing A method for manufacturing a semiconductor light-emitting device for resin-sealing a frame on which a semiconductor light-emitting element is mounted with a resin-sealed mold ,
The frame includes a pair of side frames, a mounting portion including a die pad on which the semiconductor light emitting element is mounted, a lead having one end connected to the die pad and the other end connected to the side frame, and the pair of side frames. A support bar having both ends connected to each other, and the mounting portion and the support bar are alternately arranged in a row in the longitudinal direction of the side frame ,
The support bar is provided with a through-hole at a position where the opposite faces of the middle mold meet when the mold is clamped by the resin-sealed mold, and the molten resin filling the cavity at the time of resin sealing is excessive. A method of manufacturing a semiconductor light emitting device, characterized in that when it becomes resin, it flows into the through hole . 前記貫通孔は、前記中型の対面同士が合わさる位置を中心として対称に形成されたことを特徴とする請求項１記載の半導体発光装置の製造方法。 2. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the through holes are formed symmetrically with respect to a position where the facing surfaces of the medium-size are combined.
JP2004348102A 2004-12-01 2004-12-01 Manufacturing method of semiconductor light emitting device Expired - Fee Related JP4483554B2 (en)

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