JP4465559B2 - Solenoid, shutter mechanism, and frequency adjustment method and apparatus for piezoelectric element using the same - Google Patents

Description

  The present invention relates to a frequency adjustment device for a piezoelectric element and a frequency adjustment method, and more particularly to an apparatus and method for simultaneously adjusting the frequency of a plurality of piezoelectric elements.

  FIG. 12 shows a schematic configuration diagram of a conventional frequency adjusting device using an ion gun. The inside of the vacuum chamber 50 mainly includes a piezoelectric element 52 having an electrode formed on its surface, an ion gun 51 for irradiating the piezoelectric element with an ion beam, a shielding plate 53 having a window exposing the element 52, and shielding of the window And a shutter 54 for opening. The shutter 54 is connected to a drive source 55. B in the figure represents an ion beam.

  FIG. 13 shows a solenoid that is the drive source 55. The solenoid is installed outside the vacuum chamber, and is movable within the bobbin's inner cavity, a bobbin 60 having an inner cavity, a winding 61 wound around the bobbin, a yoke 62 that covers both ends of the winding. The movable iron core 63 is constituted by a spring 66 disposed between a flange portion 65 provided on the movable iron core and a guide 64.

  By energizing the electromagnetic winding 61, the movable iron core 63 is attracted, and the flange portion 65 compresses the spring 66 by the attraction. When energization is stopped, the flange portion 65 of the movable iron core 63 is pushed up by the repulsive force of the spring 66, and the movable iron core 63 is pushed back. The movable iron core 63 is connected to the shutter 54, and the shutter 54 is opened and closed by driving a solenoid.

  The frequency adjustment apparatus shown in the figure uses a method of performing ion beam etching on the electrode of the piezoelectric element as disclosed in Japanese Patent Application Laid-Open No. 2000-323442 and Japanese Patent Application Laid-Open No. 2001-257549, and frequency adjustment while performing frequency measurement. And the adjustment was completed by closing the shutter when the desired frequency was reached.

  In the above-described conventional example, the frequency adjustment of the element is performed one by one while performing the frequency measurement. Therefore, although the frequency adjustment with high accuracy is possible, the frequency adjustment time becomes long and there is a problem in terms of productivity. In order to improve productivity, a large ion gun capable of simultaneously adjusting a plurality of elements is required. However, if an ion beam having a current density that can withstand practical use is obtained, charged particles incident from plasma, In addition, there is a problem that the shielding electrode and the acceleration electrode are distorted by radiation heat from the hot cathode.

Therefore, the applicant of the present application satisfies the high accuracy requirements of high density of current density of 10 mA / cm ² or higher, uniformity of ion beam within ± 3%, and reproducibility of ion beam current density within ± 1%. A large-diameter ion gun capable of adjusting the frequency by etching at the same time was proposed, and the productivity of piezoelectric elements was greatly improved. Such an invention is disclosed in JP-A-2002-75232.

  A method of simultaneously adjusting the frequency of a plurality of piezoelectric elements using an ion gun as described above is disclosed in JP-A-2001-36370. The frequency adjusting device disclosed in the publication includes a pattern plate including all combinations of openings corresponding to a plurality of elements exposed from the window of the shielding plate. With reference to [FIG. 14] and [FIG. 15], a conventional frequency adjusting device including a disc-shaped pattern plate 72 will be described. [FIG. 14] is a schematic configuration diagram of the apparatus, and [FIG. 15] is a perspective view of a pattern plate 72 corresponding to six elements. A plurality of piezoelectric elements 70 formed on the piezoelectric substrate are arranged on a transport carrier 71 and are transported together with the carrier 71. The pattern plate 72 is arranged in parallel to the element row on the transport carrier 71 in the radial direction. By arranging two sets of pattern plates 72 so as to face each other, in the pattern plate 72 shown in the figure, the frequency of 12 elements is adjusted simultaneously by one ion gun 73 (6 elements are set by one set of pattern boards). Adjust at the same time).

If the number of elements simultaneously processed is 6 elements, 2 ⁶ = 64 pattern rows will be prepared, but the pattern plate 72 shown in the figure has two circular plates stacked to reduce the number of pattern rows, 3 It is divided into elements and 3 elements, and 2 ³ = 8 patterns are prepared for each disk. Each circular plate is provided with a dummy opening 75, and the opening pattern of one plate 72a and the dummy opening 75 of the other plate 72b are arranged so as to overlap each other. A combination of opening and closing of all six elements can be realized by rotating the disks 72a and 72b individually by a two-axis rotational drive system. A servo motor 74 is used for the rotational drive system.

  A flowchart of the operation of the conventional apparatus is shown in FIG. First, a plurality of elements arranged in one row (A row) for frequency adjustment are set at predetermined positions (S30). Each element performs frequency measurement in advance, and a necessary beam irradiation time is calculated for each element. Next, an opening pattern is selected so that only elements that need adjustment are exposed to the window (S31), and ion beam irradiation is performed (S32). Irradiation is interrupted when the adjustment of the element with the shortest adjustment time is completed among the exposed elements (S33). At that time, select an opening pattern that exposes only the elements that need further adjustment (S31), irradiate the ion beam (S32), and when the adjustment of the element with the shortest adjustment time is completed among the exposed elements again Irradiation is interrupted (S33). This procedure is repeated, and when the adjustment of all the elements in one row is completed, the transport carrier 71 is moved to the next row and the same operation is repeated.

The number of patterns prepared on the conventional pattern plate described above is 2 ⁿ (n = number of elements). To increase the number of simultaneous processing, arrange the pitch between rows closely or increase the disc diameter. I have to. Like the pattern plate shown in [Fig. 15], it is possible to reduce the number of pattern rows by overlapping the disks, but the problem is that the mechanism of the rotary drive system becomes complicated as the number of stacked disks increases. In addition, there arises a problem that the apparatus is enlarged due to the possession area of the rotary drive system. Considering the rotational drive system, it is realistic to stack up to two disks. For example, in the case of simultaneously processing 12 elements that are twice as many, even if two disks are stacked, 64 rows of opening patterns are prepared for each disk. In order to realize this, it is necessary to change the disk diameter remarkably large, which is not realistic. In addition, since the servo motor is used for the rotational drive system, the response of the servo motor is added to the operation time of the disc-shaped pattern plate as it is. When the rotation of the pattern plate and the signal waiting time are combined, a time of about 100 ms is required. Even in the operation time, the time until the disk moves to the next opening becomes a waiting time, which causes a decrease in productivity. Furthermore, since the irradiation of an element with a long adjustment time is interrupted every time the adjustment of an element with a short adjustment time is completed, the irradiation is intermittent, and the adjustment accuracy is deteriorated compared to the case of continuously irradiating the same time. There was also.

  In order to solve the problems as described above, individual shutters corresponding to the respective elements are necessary. For this purpose, it is necessary to increase the number of drive sources as well as the number of shutters. As shown in [Fig. 13], the solenoid that is the driving source of the shutter is generally large and is provided outside the vacuum chamber. Therefore, increasing the number of shutters increases the size and complexity of the device. There was a problem that.

JP 2000-323442 A Japanese Patent Laid-Open No. 2001-257549 JP 2002-75232 A JP 2001-36370 A

  The present invention relates to a plurality of shutter plates having a solenoid that is small in size while being capable of being used and can be used inside a vacuum chamber, and a structure that does not affect the operating environment of other shutter plates even when the number of shutters increases. It is an object of the present invention to provide a highly productive frequency adjusting device including a plurality of shutters that are independently driven by laminating. That is, according to the present invention, the same number of shutter plates as the elements exposed from the window of the base plate are arranged corresponding to each element and driven independently. More specifically, a solenoid provided with a means for changing the voltage at the time of starting and holding and a cooling means of its own is arranged to face each other, a pair of movable iron cores are inserted therein, and the pair of A shutter plate is sandwiched and connected to the flange of the movable iron core, and a disc-shaped washer and a collar slightly thicker than the thickness of the shutter plate are installed in the opening that serves as a fulcrum for the shutter opening / closing operation of the shutter plate. In consideration of the above, a plurality of shutter plates connected to individual solenoids are stacked, and the solenoid is driven to drive each of the plurality of shutter plates individually at one fulcrum to open and close the shutter. It is about to try.

Description of Configuration of Embodiment Hereinafter, an embodiment of the present invention will be described. The same parts as those in the conventional example are given the same reference numerals. [FIG. 1] is a schematic view of the apparatus of the present invention. The apparatus of the present invention mainly includes an ion gun 73 that irradiates an ion beam through a grit 5, a plurality of piezoelectric elements 70 that perform frequency adjustment, a base plate 4 provided with a through hole that exposes only a plurality of elements that perform simultaneous processing, The number of shutters 1 is the same as the number of elements to be processed, the shielding plate 3 blocks the argon ions leaking from the gaps between the shutters, and the solenoid 2 serves as the shutter drive source. And all these components are installed in a vacuum chamber.

  FIG. 2 is a plan view of the shutter 1 and the piezoelectric element 70. The ion beam is irradiated perpendicularly to the paper surface from the front surface to the back surface. A transport carrier 71 including a plurality of piezoelectric elements 70 formed on a piezoelectric substrate is set in a magazine (not shown) on which a plurality of carriers can be mounted. The carrier 71 is conveyed in the direction of the arrow in the figure, and the frequency adjustment of the elements filled on the carrier is performed in units of columns. An ion collector 6 is attached to the tip of the transport carrier 71. The ion collector 6 is provided with a plurality of through holes at the same interval as the elements in the carrier. Thereby, the ion beam current density measurement corresponding to each position of a plurality of elements that perform simultaneous processing is performed.

  The shutter 1 and solenoid 2 corresponding to each element are made into one unit. By arranging a plurality of shutter units, the number of elements for simultaneous processing is adjusted. In the figure, four sets of shutter units in which six shutter plates are stacked are arranged, so that two elements arranged on the carrier carrier 71 and a total of 24 piezoelectric elements are simultaneously adjusted with one ion gun.

  The shutter unit is attached to one base plate 4. The base plate 4 will be described with reference to FIG. The base plate 4 exposes only a plurality of elements that perform simultaneous processing through the through hole 7, and shields the beam irradiation to the other elements. A protective plate 8 is attached to the surface exposed to the argon ions of the beam to protect it from etching. Since a material with a low sputtering rate is required for the protective plate 8, for example, a carbon plate or the like is used. The base plate 4 is fixed with a shutter 1 and a solenoid substrate 25 on which a plurality of solenoids 2 that are driving sources of the shutter 1 are arranged, and an elliptical stopper 11 is prepared as a fine adjustment mechanism for the front end of the shutter. A shielding plate 3 is disposed on the upper surface of the shutter and is fixed by a special screw 9. The shielding plate 3 is provided with a through hole for transmitting the beam only at a position corresponding to each element, and also has a function for shielding the ion beam leaking through the shutter 1. Therefore, the shielding plate 3 is made of a material having a low sputtering rate, such as a carbon material.

  FIG. 4 is a configuration diagram of the shutter 1. The shutter plate is formed by bending one thin plate, and includes a shutter tip 13 that blocks an ion beam, a shaft portion 12 that serves as a fulcrum of operation, and a connecting portion 14 that includes two claws. I have. The bending process takes into account the lamination, and the shape differs depending on the number of layers of the shutter plate. Specifically, the folding distance is adjusted according to the position of the stack so that the tip portions 13 are all arranged in the same plane and the connecting portions 14 are all the same distance from the shaft portion 12.

Since a plurality of shutters 1 are stacked in a limited space, a material having a thin plate thickness as much as possible is required. Further, the tip of the shutter 1 may be heated to about 400 ° C. by being exposed to an ion beam of about 10 mA / cm ^2, so that there is little thermal distortion and can withstand deformation due to external factors, and A conductive material is required. In order to satisfy these two conditions, a SUS631 precipitation hardening material having a thickness of 0.4 t was employed in this example. In addition, a DLC film or the like is applied to the surface to reduce sliding resistance due to lamination and to prevent surface abrasion.

  Since the shutter tip portion 13 is etched in a short time by being exposed to argon ions and does not serve as a shutter, a protective material 18 is attached so that the shutter plate is not directly exposed to the ion beam. Since the protective material 18 is required to be a conductive material having a low sputtering rate, carbon was used in this example. FIG. 5 shows an example of the protective material 18. The protective material 18 is provided with a positioning groove 19 and is detachably attached to the fixed claw 17 joined to the shutter plate tip portion 13.

  A collar 15 and a washer 16 are sandwiched between the shaft portions 12 of the shutter 1. A DLC film or the like is applied to the collar 15 and the washer 16 in order to reduce sliding resistance. The collar 15 and the washer 16 have the same inner diameter, the outer diameter of the collar 15 is smaller than the inner diameter of the shaft portion 12, and the outer diameter of the washer 16 is larger than the inner diameter of the shaft portion 12. Since the collar 15 having an outer diameter smaller than the inner diameter of the shutter shaft portion 12 has a thickness in the direction higher than the thickness of the shutter plate, the weight of the upper shutter plate and the color of the stacked layers is the same as that of the collar 15 and the washer. The structure is supported by 16. Thus, since the shutter plate is not subject to any weight other than its own weight, the clearance between the shutters is ensured and the sliding resistance is reduced. Furthermore, since the burden due to the stacking is not applied to the shutter plate, the number of stacked layers can be easily increased or decreased. A plurality of laminated shutter plates are fixed to the base plate 4 by screws 10 that pass through the shaft portion 12, the collar 15 and the washer 16 inside.

  FIG. 6 shows a solenoid 2 that is a driving source of the shutter 1. The solenoid 2 is mainly movable within the bobbin 20 having a hollow, a winding 21 wound around the bobbin 20, a yoke 22 that covers both ends of the winding 21, and a bobbin 20. The movable iron core 23 is used. A resin is usually used for the bobbin material, but since the resin bobbin may be deformed due to a temperature rise due to self-heating in a vacuum, a metal such as chromium copper having a high thermal conductivity and easy to process is used. An insulating film is applied to the surface of the bobbin 20 in order to prevent a short circuit with the winding wire 21. Since it is conceivable that the coating resin is peeled off due to the temperature rise, a wire rod coated with a resin having a high baking temperature such as polyester or polyimide resin is used as a countermeasure against high temperature. Normally, the wiring of the solenoid 2 is directly attached to the resin substrate, but in order to cool the solenoid, it is attached to the substrate 25 on which the lead wire is wired via the cooling plate 24 having a high thermal conductivity such as an aluminum plate. The cooling plate 24 is provided with a through hole 26 for passing a lead wire. Insulation treatment is applied to the entire surface of the cooling plate 24 and the through hole 26 as a countermeasure against short-circuiting even if lead wires come into contact. For example, measures such as anodizing the entire surface of the aluminum plate and covering the through hole with a silicon tube are taken. Also, the power line is lifted from the ground as a measure against disconnection. By cooling the cooling plate 24 having a high thermal conductivity to which the solenoid 2 is fixed, the solenoid bobbin 20, the winding 21, and the yoke 22 can be cooled via the cooling plate 24. In this embodiment, the solenoid 2 is indirectly cooled by cooling the solenoid board 25 and the base plate 4 that fixes the shutter mechanism portion by the water cooling pipe 32, but this cooling mechanism may be provided anywhere. In this embodiment, the shutter 1 can be indirectly cooled by cooling the base plate 4. As a result, the base plate 4 serves as a mounting plate for the shutter 1 and the solenoid substrate 25, but also serves as a cooling plate for the shutter 1 and the solenoid 2, and further a shielding plate for the ion beam. .

  The solenoid 2 is configured to vary the applied voltage at the time of starting and holding in order to prevent a temperature rise while maintaining the power. FIG. 19 is an example of a drive circuit diagram of a solenoid that makes the applied voltage variable. When the switch is turned on, the movable iron core is attracted using the large voltage instantaneously flowing in the coil as the starting voltage, and then the lowered voltage is held as the holding voltage.

  The movable iron core 23 of the present invention will be described with reference to [FIG. 23]. Usually, the movable iron core 23 is stopped and held by contacting the fixed iron core 34. [FIG. 23] The contact between the normal movable iron core and the fixed iron core is shown on the upper surface. In this case, however, the movable iron core 23 always makes surface and point contact with the fixed iron core 34 when the operation is completed. Deformation begins. A fixed clearance is provided between the bobbin 20 and the movable iron core 23. When the deformation of the movable iron core 23 starts and exceeds a certain diameter, the frictional resistance increases suddenly and induces malfunction. . In the present invention, [FIG. 23] A guide 33 having a diameter larger than the inner diameter of the bobbin 20 is joined to the movable iron core 23 as indicated by the hatched portion on the lower surface. The guide 33 is installed at a position where it contacts the yoke 22 immediately before the movable iron core 23 contacts the fixed iron core 34. As a result, the movable iron core 23 is positioned by contacting the yoke 22 when the operation is completed.At this time, the movable iron core tip 35 does not contact the fixed iron core 34, so the tip 35 is not deformed and has a long life. You can plan. The guide 33 takes into account deformation, and the contact area between the guide 33 and the yoke 22 is made larger than the contact area between the fixed iron core 34 and the movable iron core 23.

  FIG. 24 shows the number of operations of the movable iron core 23 and the outer diameter of the tip 35 of the movable iron core 23. In FIG. 23, (f) shows the outer diameter of the tip 35 in continuous operation when the movable iron core 23 and the fixed iron core 34 are held in direct contact with each other as shown on the upper surface of FIG. (E) shows a case in which the movable iron core 23 is held by bringing the guide 33 and the yoke 22 into contact with each other using the guide 33 of the present invention without bringing the movable iron core 23 and the fixed iron core 34 into contact with each other. The change in the outer diameter of the tip 35 in continuous operation is shown. From the figure, by using the guide 33 of the present invention, the clearance between the bobbin 20 and the movable iron core 23 is maintained without the outer diameter of the movable iron core tip 35 being deformed by continuous operation. It can be seen that it has become possible to reduce malfunctions and dramatically extend the life of the solenoid.

  FIG. 7 shows the driving of the shutter 1 by the solenoid 2. The two solenoids 2 face each other, connect two movable iron cores 23, and are arranged so that the movable iron cores 23 operate integrally on one straight line. One movable iron core may be operated by inserting one movable iron core into a pair of opposed solenoids and energizing each solenoid. However, if the position of the pair of solenoids shifts, the movable iron core operates. In this embodiment, the movable iron core is divided into two parts. The flange portions 27 of the two movable iron cores 23 are sandwiched between the two claws of the shutter connecting portion 14, and the pair of movable iron cores 23 and one shutter plate are connected.

  Normally, it is common to use a single solenoid and spring to move the movable iron core back and forth. However, in the case of the present invention, since the solenoid is arranged in a limited space, the outer dimensions of the solenoid are as much as possible. Downsizing is required. When the size is reduced, the suction force decreases, and the suction force is reduced by the spring, so that reliable operation becomes difficult. In order to avoid this, in the present invention, two solenoids 2 are opposed to each other instead of the spring, and the reciprocating motion of the movable iron core 23 is performed.

  By alternately energizing the two solenoids 2 and reciprocating the movable iron core 23, the reciprocating movement of the movable iron core 23 is converted into the rotational movement of the shutter 1. The shutter performs a rotational motion with a collar 15 inserted in the shaft portion 12 as a fulcrum, and this is an opening / closing operation of the shutter 1. Energizing one solenoid 2a causes the shutter 1 to open, and energizing the other solenoid 2b causes the shutter 1 to close. Fine adjustment of the shutter tip opening / closing operation is performed by an elliptical stopper 11 provided on the base plate 4.

  As described above, according to the present invention, it is possible to create a shutter unit by selecting the quantity of the shutter 1 and the solenoid 2 in accordance with the increase or decrease in the production amount of the piezoelectric element for adjusting the frequency simultaneously, and the current one-ion gun configuration. It becomes possible to drastically increase the production efficiency by making the 2 ion gun configuration.

  Next, the ion gangrit of the present invention will be described. A grit 5 shown in FIG. 1 has a plurality of grit holes 31 having the same shape, and extracts an ion beam. FIG. 11 is a plan view of the grit hole 31. In the figure, the area irradiated with the linear component of the ion beam drawn from the grit on the electrode of the piezoelectric element 70 is painted in black. In the figure, the ion beam is irradiated from the back surface to the front surface. Therefore, it is assumed that the electrodes of the piezoelectric element 70 are installed on the front side of the paper surface. When etching the electrode of the piezoelectric element with the porous grit, as shown in FIG. 11C, if the electrode diameter of the piezoelectric element is larger than the grit hole diameter, the beam current density does not vary depending on the position of the grit. However, when the piezoelectric element is reduced in size, the electrodes of the piezoelectric element become smaller, and when a plurality of piezoelectric elements are filled at a high density in order to increase the number of simultaneous processes, the electrode diameter of each element becomes smaller than the grit hole diameter. As shown in (b) of FIG. 11], in the conventional grit, the area irradiated with the ion beam having the linear component drawn from the grit varies depending on the position of the element. This is a variation in the beam current density at each position. In the present invention, as shown in FIG. 11 (a), the arrangement of the holes 31 of the ion gangrit is made equal to the arrangement of the piezoelectric elements, and the ion beam having the linear component drawn from the ion gun has the same area for all the elements. So that it can be irradiated.

  [FIG. 11] FIG. 25 shows the measurement results of the ion beam current density using the ion ganglit holes shown in (a) and (b). In FIG. 11, (a) shows the measurement results in the case of using the ion gangrit hole of the present invention shown in FIG. 11 (a), and (b) shows the conventional ion gangrite hole shown in FIG. 11 (b). The measurement results when used are shown. When the conventional ion ganglit hole is used, the area irradiated with the ion beam having a linear component drawn from the ion gun is different in each element, and this is a variation in the beam current density as it is. When the ion ganglit hole of the present invention is used, all elements are irradiated with an ion beam having substantially the same linear component, so that variations in beam current density in each element are small. From the figure, it can be seen that it is possible to obtain a highly uniform beam current density in each element by using the ion ganglit hole of the present invention.

Description of Action and Operation of Embodiments Frequency adjustment using the device of the present invention will be described with reference to [FIG. 2], [FIG. 10] and [FIG. 16] to [FIG. [FIG. 10] is a system configuration diagram of the apparatus, and [FIG. 16] is a general flow diagram showing the entire adjustment procedure. First, the frequency of each element filled in a plurality of piezoelectric substrates mounted on the carrier carrier 71 is measured (S1), and the measurement result is input to the PC 29. The transfer carrier 71 is set in a magazine (not shown), put into a vacuum chamber, and evacuated. Next, the carrier 71 for adjusting the frequency is carried in (S2), and the ion collector 6 provided at the tip thereof is arranged at the beam irradiation position. After confirming that it has stopped at a predetermined position, the current density is measured (S3).

  A flow diagram of current density measurement is shown in [Fig. 17]. Here, the plurality of piezoelectric elements 70 formed on the piezoelectric substrate are arranged on the carrier carrier 71, and the frequency adjustment is performed in units of columns. The conventional apparatus performs simultaneous frequency adjustment for only one column. However, since the present invention apparatus can adjust a plurality of columns simultaneously, current density measurement is also performed for a plurality of columns. It is assumed that the columns for which frequency adjustment is performed simultaneously are the A column and the B column, and N elements are arranged in each column. The ion collector 6 also corresponds to each element, and N beam transmission apertures are provided in one row. First, beam irradiation is performed (S11) in a state where all the shutters 1 in the A / B rows are closed (S10). In this state, the current density is measured (S12). Next, with all the shutters in the B row closed (S13), only the nth shutter in the A row is opened (S14), and the nth current density in the A row is measured (S15). In the same procedure, all the current densities at the N element positions in the A row are measured. When the measurement for all rows A is completed, the measurement for row B is performed in the same manner. The current density measurement result at each element position is input to the PC 29. The PC 29 calculates the ion beam irradiation time for each element from the input frequency and current density measurement results (S4). The calculated result is transferred to the PLC 30, and the time for energizing the two solenoids 2 in the PLC 30 is calculated. Based on the calculation result of PLC30, individual frequency adjustment is performed by turning solenoid 2 ON / OFF (S5).

  A flow chart for individual frequency adjustment is shown in [FIG. 18]. First, the beams are turned on (S21) with the shutters of all the elements in the A / B rows closed (S20). Next, all shutters 1 corresponding to elements whose beam irradiation time calculated by the PC 29 is other than 0 are opened (S22), and a beam irradiation time timer is started (S23). The shutters corresponding to the elements that have reached the specified irradiation time are sequentially closed from the shutter 1 (S24), and the beams are turned off when all the shutters 1 are closed (S25). Reset the beam irradiation time timer (S26) and move to the next row (S27).

  Similarly, the frequency adjustment is performed, and when the adjustment of all the elements 70 filled in the transport carrier 71 is completed, the transport carrier 71 is unloaded (S6). Subsequently, the carrier carrier 71 whose frequency is not adjusted is carried in (S2), and the same operation is repeated to adjust the frequency of all the carrier carriers mounted in a magazine (not shown). Compared with the conventional flow chart shown in [Fig. 22], according to the present invention, it is possible to increase the number of columns simultaneously irradiated with the ion beam and to adjust the frequency without interrupting the ion beam irradiation. It turns out that it became.

  Next, the effect of the solenoid of the present invention will be described. The solenoid according to the present invention has its own cooling means, and furthermore, by making the voltage at the time of starting and holding variable, the temperature rise is prevented while maintaining the power, and the continuous operation inside the vacuum chamber is possible.

  [FIG. 20] is a result of measuring the surface temperature of the solenoid driven without using the cooling and voltage varying means of the present invention. The measurement was performed in a state where a solenoid driven at a constant voltage of 5 V was used in a vacuum and in the atmosphere. A higher drive voltage is better to increase the power, but when operated in a vacuum, cooling by heat dissipation cannot be expected. It can be seen that in a vacuum operation with a constant voltage of 5 V, the temperature rises to 140 ° C. within a few minutes after energization. When mounted on an actual machine, the base plate 4 for fixing the solenoid by the ion gun rises by about 20 ° C., so it is necessary to consider it as 160 ° C. This temperature is almost the same as the thermal spraying temperature of the insulating material covering the lead wire, and peeling or the like is considered, so that the operation inside the vacuum chamber is almost impossible.

  [FIG. 21a] shows the result of measuring the solenoid surface temperature when the solenoid equipped with the cooling means of the present invention is driven at a constant voltage of 5V. For the measurement, the device shown in this example is used. The solenoid bobbin material is made of chrome copper, the cooling plate 24 is made of an aluminum plate, and the base plate 4 connected to the cooling plate 24 is cooled by a water cooling pipe to cool the solenoid. While performing, the ion gun was operated and the actual load was applied. The figure also shows the temperature of the base plate 4. From the figure, it can be seen that the temperature rise is suppressed to almost the same level as when used in the atmosphere despite the state in which the ion gun is operated inside the vacuum chamber.

  FIG. 21b shows the measurement result of the solenoid surface temperature when the solenoid used in the above measurement is further driven by the circuit shown in FIG. The measurement was performed under the same conditions as the measurement shown in [Fig. 21a]. In order to obtain a voltage of 12V at start-up and a voltage of 2.5V at hold, V1 = 12V, R = 30Ω, and C = 470 μF. Compared to driving with a constant voltage of 5V, the solenoid start-up voltage is 2.4V, 12V, but by setting the holding voltage to 2.5V, a further temperature drop of about 30 ° C can be confirmed. Comparing [FIG. 20] and [FIG. 21b], it can be seen that the use of the cooling and voltage varying means of the present invention enables use in a vacuum while increasing the driving force.

  Finally, the maintainability of the device of the present invention will be described. The shutter 1 and the solenoid substrate 25 are unitized by being attached to one base plate 4. As a result, position adjustment work can be performed by external setup, so that the maintenance time of the equipment can be greatly shortened by preparing a spare. The protective material 18 attached to the shutter tip 13 is consumed quickly by etching, but can be easily replaced by being detachably held, so that the workability during maintenance can be improved. Also, by attaching the protective material 18, it is possible to dramatically extend the life of the shutter plate, leading to cost reduction. Although a hole for allowing the beam to pass through is prepared in the shielding plate 3, since the positional deviation causes variation in the etching distribution, it is necessary to accurately position the shielding plate 3 and the ion collector 6. Therefore, in the present invention, positioning is performed by the pin gauge 28 shown in FIG. The shielding plate 3 is configured so that it can be positioned and fixed from both the front and back surfaces by a special screw 9 shown in FIG.

Description of other embodiments, description of examples of diversion to other applications In the above embodiments, frequency adjustment using an ion gun has been described, but the present invention can also be used for frequency adjustment using other etching sources or vapor deposition sources. It is. In particular, according to the present invention, it is possible to open and close the shutter while irradiating the ion beam, and further, by using a solenoid to control the drive voltage, the shutter can be opened and closed in about 10 ms. Therefore, it can also be used for frequency adjustment of crystal units that require a high-accuracy operating time of 20 ms or less.

  By providing a plurality of shutters that are independently driven in the present invention corresponding to each element, the frequency of the plurality of elements can be adjusted in a short time, and the productivity of the apparatus can be remarkably improved. It was. At the same time, it is possible to irradiate individual elements with a highly uniform beam by making the array of ion ganglit holes equal to the array of piezoelectric elements, and it is possible to continuously irradiate the elements with beams. As a result, the frequency adjustment accuracy can be greatly improved. In addition, by proposing a plurality of shutter plates with a structure that does not affect the operating environment of other plates even if the number increases, the number of simultaneous processing of frequency adjustment can be easily increased or decreased. It was. Further, by proposing a drive source that is small and can be used even inside the vacuum chamber while maintaining the capability according to the present invention, the entire apparatus can be reduced in size and simplified. In addition, by fixing multiple shutter plates and drive sources to a single plate, and by installing removable parts on the parts that are exposed to the beam and are quickly consumed, it is possible to improve work and reduce costs during maintenance. It became.

Schematic diagram of frequency adjusting device of the present invention The present invention shutter and piezoelectric element plan view The base plate perspective view of the present invention The present invention shutter perspective view The present invention protective material perspective view The present invention solenoid perspective view Solenoid and shutter explanatory drawing of the present invention Positioning explanatory diagram of the shielding plate and ion collector of the present invention Special screw perspective view of the present invention System configuration diagram of the device of the present invention The present invention grit hole plan view Schematic diagram of conventional single-element frequency adjustment device Schematic diagram of conventional solenoid Conventional frequency adjustment device configuration diagram for multiple elements Conventional pattern board perspective view The present invention frequency adjustment general flow diagram Current density measurement flow diagram of the present invention Individual frequency adjustment flowchart of the present invention Solenoid circuit diagram of the present invention Solenoid surface temperature measurement diagram when cooling means and voltage variable means are not used Solenoid surface temperature measurement diagram when using the cooling means of the present invention Solenoid surface temperature measurement diagram when using cooling means and voltage variable means of the present invention Conventional individual frequency adjustment flow chart Illustration of movable iron core in solenoid of the present invention Number of operations of the solenoid of the present invention and measurement of the outer diameter of the tip of the movable iron core Current density distribution diagram in the present invention and conventional grit holes

Explanation of symbols

1 Shutter
2 Solenoid
3 Shield plate
4 Base plate
5 grit
6 Ion collector
7 Through hole
8 Protection plate
9 Special screw
10 screw
11 Stopper
12 Shaft
13 Tip
14 Connecting part
15 colors
16 Washer
17 nails
18 Protective material
19 Positioning groove
20 bobbins
21 Winding
22 York
23 Movable iron core
24 Cold plate
25 substrate
26 Through hole
27 Flange
28 pin gauge
29 PC
30 PLC
31 Grit hole
32 Water cooling pipe
33 Guide
34 Fixed iron core
35 Tip
50 vacuum chamber
51 Ion Gun
52 Piezoelectric element
53 Shield plate
54 Shutter
55 Driving source
60 bobbins
61 Winding
62 York
63 Movable iron core
64 Guide
65 Flange
66 Spring
70 Piezoelectric element
71 Carrier
72 pattern board
73 Ion Gun
74 Servo motor
75 dummy opening

Claims (12)

A pair of solenoids mounted in the vacuum chamber to drive a shutter plate that exposes and shields the piezoelectric elements in the vacuum chamber;
First solenoid having a first movable iron core to which a voltage is inserted into the first bobbin and said first bobbin winding is wound to be applied, and
Ri second solenoid <br/> Tona having a second movable iron core windings to which a voltage is applied is inserted into the second bobbin and said second bobbin wound,
The first and second movable iron cores have first and second flanges at respective one ends, and the first and second flanges are arranged so as to face each other, and the first and second flanges are arranged by the shutter plate. A pair of solenoids in which a second flange is sandwiched and the other end sides of the first and second movable iron cores are respectively inserted into the first and second bobbins .
A pair of solenoids according to claim 1,
The first and second solenoids further comprise first and second yokes for sandwiching both end portions of the first and second bobbins, respectively.
Wherein the first and first and second flange portions of larger diameter than the inner diameter of the first and second yoke to the second movable iron core (guide) are respectively provided, said first guide and said second a pair of solenoids which the first and second sliding range of the movable iron core is limited by the abutment of the abutment and the second guide and the second yoke and the first yoke.
A pair of solenoid according to claim 2, further comprising a cooling plate for cooling said pair of solenoids, said first and second yokes a pair of solenoids which are fixed to the cooling plate.
In a pair of solenoid according to claim 1, wherein the first and second bobbin, a pair of solenoids which is metallic bobbin coated with insulating film on the surface.
In a pair of solenoid according to claim 1, a pair of solenoids which the winding is made of polyester copper or polyimide copper wire.
A pair of solenoid according to claim 3, further, a pair of solenoids having a water cooling pipe for further cooling the cooling plate.
The pair of solenoids according to claim 3 , wherein the cooling plate is an aluminum plate having an alumite treatment on a surface thereof, and the winding is installed on the opposite side through a hole in the cooling plate having a silicon tube penetrated. A pair of solenoids wired to the printed circuit board.
A pair of solenoid according to claim 1, a pair of solenoids a first voltage, when holding the having means for applying a second voltage lower than the first voltage to each solenoid at startup.
A shutter mechanism mounted in the vacuum chamber for exposing and shielding the piezoelectric element in the vacuum chamber, the pair of solenoids according to any one of claims 1 to 8 , and the first and first A shutter mechanism comprising a shutter plate having one end attached to two movable iron cores.
The shutter mechanism according to claim 9 , wherein the other end of the shutter plate is configured to rotate with respect to a predetermined fulcrum.
A frequency adjustment device for a piezoelectric element,
An ion source mounted inside the vacuum chamber, a transport carrier for transporting the piezoelectric element substrate at a position facing the ion source, and the shutter mechanism according to claim 9 or 10 ,
A frequency adjusting device configured to selectively pass an ion beam from the ion source with respect to the piezoelectric element substrate by moving the other end of the shutter plate.
A frequency adjustment device for a piezoelectric element,
An evaporation source mounted inside the vacuum chamber, a transport carrier for transporting the piezoelectric element substrate at a position facing the evaporation source, and the shutter mechanism according to claim 9 or 10 ,
A frequency adjusting device configured to selectively pass a vapor deposition material from the evaporation source with respect to the piezoelectric element substrate by moving the other end of the shutter plate.

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