JP4461969B2 - 半導体発光装置およびその製造方法 - Google Patents
半導体発光装置およびその製造方法 Download PDFInfo
- Publication number
- JP4461969B2 JP4461969B2 JP2004257936A JP2004257936A JP4461969B2 JP 4461969 B2 JP4461969 B2 JP 4461969B2 JP 2004257936 A JP2004257936 A JP 2004257936A JP 2004257936 A JP2004257936 A JP 2004257936A JP 4461969 B2 JP4461969 B2 JP 4461969B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- resin
- resin portion
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
本発明の実施の形態に係る半導体発光装置の構成を図1および図2に基づいて説明する。図1は本発明の実施の形態に係る半導体発光装置の構成を説明する垂直断面図である。図2は図1のA部拡大図である。
2 リードフレーム
2a アノード側リードフレーム
2b カソード側リードフレーム
2c カップ部
3 半導体発光素子
3a 基板
3b n型半導体層
3c 発光層
3d p型半導体層
3e n側電極
3f p側電極
3g バンプ
3h n側電極
4 サブマウント素子
5 樹脂部
5a 第1の樹脂部
5b 第2の樹脂部
6 ワイヤ
7 カップ部
7a 凹部
7b 側壁部
7c 縁部
7d 周壁部
Claims (6)
- 基板に積層されたGaN系の半導体層で形成され、フェイスダウンで実装された半導体発光素子と、前記半導体発光素子が搭載されたカップ部と、前記半導体発光素子を封止した樹脂部とを有する半導体発光装置において、前記樹脂部は、少なくとも前記半導体発光素子の発光層より下部に設けられた電極を覆い、かつ前記半導体発光素子の主光取り出し面を覆わないように形成された第1の樹脂部と、前記第1の樹脂部の上面に形成され、前記半導体発光素子を覆うように形成された第2の樹脂部からなり、前記第1の樹脂部の屈折率をN1、前記第2の樹脂部の屈折率をN2、前記基板の屈折率をN4、前記半導体層の屈折率をN5としたときに、N1<N4およびN1<N5の関係と、N1<N2の関係を有し、前記カップ部は、前記第1の樹脂部の厚みを深さとした凹部と、前記凹部の側壁部を延長するように前記凹部の縁部に接続された周壁部とから構成されたことを特徴とする半導体発光装置。
- 前記第1の樹脂部と、前記第2の樹脂部と、前記基板と、前記半導体層とのそれぞれの屈折率が、|N1−N5|>|N2−N4|の関係を有することを特徴とする請求項1記載の半導体発光装置。
- 前記第2の樹脂部の屈折率は、前記半導体発光素子の前記基板の屈折率に略等しい値としたことを特徴とする請求項1または2記載の半導体発光装置。
- 基板に積層されたGaN系の半導体層で形成され、フェイスダウンで実装された半導体発光素子と、前記半導体発光素子が搭載されたカップ部と、前記半導体発光素子を封止した樹脂部とを有する半導体発光装置の製造方法において、半導体発光素子をカップ部に実装し、前記カップ部に、前記半導体発光素子の前記基板の屈折率をN4、前記半導体層の屈折率をN5としたときに、屈折率がN1であり、N4>N1およびN5>N1の関係となる樹脂で、少なくとも前記半導体発光素子の発光層より下部に設けられた電極を覆い、かつ前記基板の主光取り出し面を覆わないように第1の樹脂部を形成し、前記第1の樹脂部が形成された後に、屈折率がN2であり、N1<N2の関係となる樹脂で、前記第1の樹脂部の上面に半導体発光素子を覆うように第2の樹脂部を形成し、前記カップ部は、前記第1の樹脂部の厚みを深さとした凹部と、前記凹部の側壁部を延長するように前記凹部の縁部に接続された周壁部とからなり、前記第1の樹脂部を形成するに際し、前記凹部の縁部まで前記第1の樹脂部を形成する樹脂を充填し、前記周壁部を前記凹部の縁部に接続して、前記第1の樹脂部を形成する樹脂を硬化させ、前記第2の樹脂部を形成することを特徴とする半導体発光装置の製造方法。
- 前記第1の樹脂部と、前記第2の樹脂部と、前記基板と、前記半導体層とのそれぞれの屈折率が、|N1−N5|>|N2−N4|の関係を有することを特徴とする請求項4記載の半導体発光装置の製造方法。
- 前記第2の樹脂部の屈折率は、前記半導体発光素子の前記基板の屈折率に略等しい値としたことを特徴とする請求項4または5記載の半導体発光装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004257936A JP4461969B2 (ja) | 2004-09-06 | 2004-09-06 | 半導体発光装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004257936A JP4461969B2 (ja) | 2004-09-06 | 2004-09-06 | 半導体発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006073912A JP2006073912A (ja) | 2006-03-16 |
JP4461969B2 true JP4461969B2 (ja) | 2010-05-12 |
Family
ID=36154175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004257936A Expired - Fee Related JP4461969B2 (ja) | 2004-09-06 | 2004-09-06 | 半導体発光装置およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4461969B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012114142A (ja) * | 2010-11-22 | 2012-06-14 | Panasonic Corp | Led発光装置 |
-
2004
- 2004-09-06 JP JP2004257936A patent/JP4461969B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006073912A (ja) | 2006-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7872410B2 (en) | Light emitting device and light emitter | |
TWI550910B (zh) | Semiconductor light emitting device | |
JP4870572B2 (ja) | 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 | |
JP6545981B2 (ja) | 半導体発光装置 | |
US7531845B2 (en) | Semiconductor light emitting device | |
US20060043407A1 (en) | Semiconductor light emitting apparatus | |
US10461227B2 (en) | Method for manufacturing light emitting device, and light emitting device | |
CN109196667B (zh) | 半导体发光元件及其制造方法 | |
US8399902B2 (en) | Light emitting device and method of manufacturing light emitting device | |
KR101766297B1 (ko) | 발광소자 패키지 및 그 제조방법 | |
KR101778141B1 (ko) | 반도체 발광소자 및 이의 제조방법 | |
JP4461969B2 (ja) | 半導体発光装置およびその製造方法 | |
KR101772550B1 (ko) | 반도체 발광소자 | |
KR101863549B1 (ko) | 반도체 발광소자 | |
KR101863538B1 (ko) | 반도체 발광소자 및 이의 제조 방법 | |
KR101779084B1 (ko) | 반도체 발광소자 구조물 및 반도체 발광소자 구조물을 제조하는 방법 | |
TW201537774A (zh) | 半導體發光裝置及其製造方法 | |
KR20160106153A (ko) | 완전한 led 패키지로 사용되는 깊은 성형된 반사기 컵 | |
KR101855189B1 (ko) | 반도체 발광소자 | |
KR101824589B1 (ko) | 반도체 발광소자 구조물 | |
US20170141272A1 (en) | Frame for semiconductor light emitting device | |
JP2019186381A (ja) | 基板及びそれを用いた発光装置の製造方法 | |
KR20170109167A (ko) | 반도체 발광소자 | |
KR101863546B1 (ko) | 반도체 발광소자 | |
KR20170030125A (ko) | 반도체 발광소자 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070329 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20070412 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090924 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090929 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091119 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20091120 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100126 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100208 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130226 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130226 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140226 Year of fee payment: 4 |
|
LAPS | Cancellation because of no payment of annual fees |