JP4459992B2 - 剥離装置 - Google Patents

剥離装置 Download PDF

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Publication number
JP4459992B2
JP4459992B2 JP2007253117A JP2007253117A JP4459992B2 JP 4459992 B2 JP4459992 B2 JP 4459992B2 JP 2007253117 A JP2007253117 A JP 2007253117A JP 2007253117 A JP2007253117 A JP 2007253117A JP 4459992 B2 JP4459992 B2 JP 4459992B2
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JP
Japan
Prior art keywords
layer
peeling
film
substrate
liquid
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Expired - Fee Related
Application number
JP2007253117A
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English (en)
Japanese (ja)
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JP2008109124A5 (https=
JP2008109124A (ja
Inventor
晋吾 江口
洋平 門馬
敦弘 谷
美佐子 廣末
健一 橋本
泰靖 保坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007253117A priority Critical patent/JP4459992B2/ja
Publication of JP2008109124A publication Critical patent/JP2008109124A/ja
Publication of JP2008109124A5 publication Critical patent/JP2008109124A5/ja
Application granted granted Critical
Publication of JP4459992B2 publication Critical patent/JP4459992B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
JP2007253117A 2006-09-29 2007-09-28 剥離装置 Expired - Fee Related JP4459992B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007253117A JP4459992B2 (ja) 2006-09-29 2007-09-28 剥離装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006266531 2006-09-29
JP2007253117A JP4459992B2 (ja) 2006-09-29 2007-09-28 剥離装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009261673A Division JP5341723B2 (ja) 2006-09-29 2009-11-17 剥離装置

Publications (3)

Publication Number Publication Date
JP2008109124A JP2008109124A (ja) 2008-05-08
JP2008109124A5 JP2008109124A5 (https=) 2009-10-01
JP4459992B2 true JP4459992B2 (ja) 2010-04-28

Family

ID=39442178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007253117A Expired - Fee Related JP4459992B2 (ja) 2006-09-29 2007-09-28 剥離装置

Country Status (1)

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JP (1) JP4459992B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101022017B1 (ko) * 2008-10-01 2011-03-16 한국기계연구원 계층화 구조물 제조 장치
CN102184841A (zh) * 2010-12-17 2011-09-14 无锡华润上华半导体有限公司 晶圆代工机台超纯水回收方法及系统
KR102309244B1 (ko) * 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9427949B2 (en) * 2013-12-03 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and stack manufacturing apparatus
WO2015087192A1 (en) * 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
JP6268483B2 (ja) * 2014-06-03 2018-01-31 旭硝子株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
JP2016021560A (ja) * 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置
JP6815096B2 (ja) * 2015-05-27 2021-01-20 株式会社半導体エネルギー研究所 剥離装置
JP2023178740A (ja) * 2022-06-06 2023-12-18 富士フイルム株式会社 転写方法及び転写装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003237263A (ja) * 2002-02-18 2003-08-27 Minolta Co Ltd 再生可能な情報保持体、該情報保持体の再生方法、及び再生装置
JP2004311955A (ja) * 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
JP2005079553A (ja) * 2003-09-03 2005-03-24 Seiko Epson Corp 転写方法、剥離方法、及び剥離装置
CN100540431C (zh) * 2004-07-02 2009-09-16 夏普股份有限公司 膜剥离方法和装置
JP4749074B2 (ja) * 2004-07-30 2011-08-17 株式会社半導体エネルギー研究所 Ｉｃチップの作製方法及び装置
JP4479512B2 (ja) * 2005-01-18 2010-06-09 東レ株式会社 回路基板用部材および回路基板用部材の製造方法
JP2006216891A (ja) * 2005-02-07 2006-08-17 Tokyo Univ Of Agriculture & Technology 薄膜素子構造の作製方法、及び薄膜素子構造作製用の機能性基体
JP2006259095A (ja) * 2005-03-16 2006-09-28 Mitsubishi Paper Mills Ltd 光架橋性樹脂組成物

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JP2008109124A (ja) 2008-05-08

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