JP4454357B2 - Resin-sealed semiconductor device and manufacturing method thereof - Google Patents

Resin-sealed semiconductor device and manufacturing method thereof Download PDF

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JP4454357B2
JP4454357B2 JP2004090724A JP2004090724A JP4454357B2 JP 4454357 B2 JP4454357 B2 JP 4454357B2 JP 2004090724 A JP2004090724 A JP 2004090724A JP 2004090724 A JP2004090724 A JP 2004090724A JP 4454357 B2 JP4454357 B2 JP 4454357B2
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resin
lead
semiconductor device
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lead piece
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JP2005277231A (en
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雄司 森永
義政 小林
高弘 大西
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Shindengen Electric Manufacturing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/38Structure, shape, material or disposition of the strap connectors prior to the connecting process of a plurality of strap connectors
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/38Structure, shape, material or disposition of the strap connectors prior to the connecting process of a plurality of strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005Shape
    • H01L2224/4009Loop shape
    • H01L2224/40095Kinked
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/8485Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

本発明は、樹脂封止型半導体装置及びその製造方法に係り、特に多品種の半導体チップに対応する樹脂封止型半導体装置及びその製造方法に関する発明である。   The present invention relates to a resin-encapsulated semiconductor device and a method for manufacturing the same, and more particularly to a resin-encapsulated semiconductor device corresponding to a wide variety of semiconductor chips and a method for manufacturing the same.

従来、放熱性、電気的特性の向上の為、半導体チップをリード片と接続子で挟み込む形の構造をとる樹脂封止型半導体装置の場合、半導体チップの厚さ分の曲げ加工を行った接続子により半導体チップ片面側の接続を行っていた(例えば特許文献1を参照)。   Conventionally, in the case of a resin-encapsulated semiconductor device having a structure in which a semiconductor chip is sandwiched between a lead piece and a connector in order to improve heat dissipation and electrical characteristics, the connection is performed by bending the thickness of the semiconductor chip. The semiconductor chip was connected on one side of the chip (see, for example, Patent Document 1).

この技術では、多品種の厚さ、外形寸法の異なる半導体チップに対応する場合、半導体チップごとに半導体チップ接続部寸法、曲げ加工寸法の異なった多種類の接続子を用意する必要があった。   In this technique, when dealing with semiconductor chips having different thicknesses and outer dimensions, it is necessary to prepare various types of connectors having different semiconductor chip connection dimensions and bending dimensions for each semiconductor chip.

ところで接続子とリード片で半導体チップを挟み込む構造をとる樹脂封止型半導体装置は、ワイヤー等による接続構造より大きな電流が流せる上放熱性にも優れる為、特にパワー系半導体部品として使用される事が多い。   By the way, a resin-encapsulated semiconductor device having a structure in which a semiconductor chip is sandwiched between a connector and a lead piece can flow a larger current than a connection structure using wires or the like and has excellent heat dissipation properties. There are many.

図3は従来の樹脂封止型半導体装置の斜視図であり、図4は従来の樹脂封止型半導体装置の断面図である。便宜上樹脂封止部を透視した図で破線部は樹脂部を示している。なお、図3は説明の便宜上樹脂部を透視した状態で表し、樹脂部は破線で記載している。図3及び図4において1a,1bはリード片、2は半導体チップ、5は接続子、6は折曲部、7は樹脂部である。   FIG. 3 is a perspective view of a conventional resin-encapsulated semiconductor device, and FIG. 4 is a cross-sectional view of the conventional resin-encapsulated semiconductor device. For the sake of convenience, the broken line portion shows the resin portion in the perspective view of the resin sealing portion. Note that FIG. 3 shows the resin part seen through for convenience of explanation, and the resin part is indicated by a broken line. 3 and 4, 1a and 1b are lead pieces, 2 is a semiconductor chip, 5 is a connector, 6 is a bent portion, and 7 is a resin portion.

パワー系として利用される従来の樹脂封止型半導体装置では、樹脂パッケージ下面から露出するリード片1a,1bを設け、リード片1a上に上面下面の両面に電極を持つ半導体チップ2を搭載する場合、半導体チップ2とリード片1bとは接続子5で接続する構造としている。接続子5は、一方の端部がリード片1aとで半導体チップを挟み込む形で半導体チップ2の上面電極に接続され、他方の端部がリード片1bと接続されている。また半導体チップ2の上面電極とリード片1bとの高さの差に対応するために折曲部6を形成している。   In a conventional resin-encapsulated semiconductor device used as a power system, lead pieces 1a and 1b exposed from the bottom surface of a resin package are provided, and a semiconductor chip 2 having electrodes on both sides of the top and bottom surfaces is mounted on the lead piece 1a. The semiconductor chip 2 and the lead piece 1b are connected by a connector 5. The connector 5 has one end connected to the upper surface electrode of the semiconductor chip 2 with the semiconductor chip sandwiched between the lead piece 1a and the other end connected to the lead piece 1b. Further, the bent portion 6 is formed to cope with the difference in height between the upper surface electrode of the semiconductor chip 2 and the lead piece 1b.

ところで搭載する半導体チップは、顧客ニーズに応じて様々な厚さ又は大きさを持つものが搭載されている。半導体チップ2の厚さ又は大きさが変われば、接続子5はこれに応じて寸法の異なった種類を準備しなければならない為、接続子の種類はチップの厚さの種類掛けるチップのサイズ種類分必要になる。
特開平9−129796号公報
By the way, semiconductor chips to be mounted are mounted with various thicknesses or sizes according to customer needs. If the thickness or size of the semiconductor chip 2 changes, the connector 5 must be prepared in a different type according to the thickness. Therefore, the connector type is the chip thickness type multiplied by the chip thickness type. I need minutes.
JP-A-9-129796

そこでさまざまな種類の接続子を準備する為に、接続子を形成する金型を半導体チップの種類分準備してチップサイズと厚さに対応した接続子を多種作成し、それを使用する事で対応していた。したがって、組立時における接続子の位置決めなどの作業は、半導体チップの種類よって変えなければならず工程管理が難しかった。またこの技術では、樹脂封止後にリード等を切断分割する際にリード等の間に挟まれた樹脂が変形して薄くなり、樹脂封止型半導体装置の品質低下を招く事があった。   Therefore, in order to prepare various types of connectors, by preparing the molds that form the connectors for each type of semiconductor chip, creating various connectors corresponding to the chip size and thickness, and using them It corresponded. Therefore, operations such as positioning of connectors during assembly have to be changed depending on the type of semiconductor chip, and process management has been difficult. Also, with this technique, when the leads and the like are cut and divided after the resin sealing, the resin sandwiched between the leads and the like is deformed and thinned, and the quality of the resin-encapsulated semiconductor device may be deteriorated.

そこで本発明は、多種の半導体チップに対応する接続子とリード片で挟み込む構造をとる樹脂封止型半導体装置の接続子の種類を削減する事を課題とする。   Therefore, an object of the present invention is to reduce the types of connectors of a resin-encapsulated semiconductor device having a structure in which the connectors corresponding to various semiconductor chips are sandwiched between lead pieces.

さらに多品種の半導体チップに対応する接続子とリード片で挟み込む構造をとる樹脂封止型半導体装置の接続子の組立時位置決めを容易にし、製造コストを削減する事を課題とする。   It is another object of the present invention to facilitate positioning of a connector of a resin-encapsulated semiconductor device having a structure in which a connector corresponding to a wide variety of semiconductor chips and a lead piece are sandwiched and to reduce manufacturing costs.

くわえて樹脂封止後の製品を切断分割する際の品質低下を防ぐ事を課題とする。   In addition, it is an object to prevent quality degradation when cutting and dividing a product after resin sealing.

前記課題を解決する本願において開示される発明は以下の通りである。   The invention disclosed in the present application for solving the above problems is as follows.

樹脂パッケージに半導体チップを封止した樹脂封止型半導体装置において、前記樹脂パッケージから部分的に露出した第1のリード片及び第2のリード片と、上下両面に電極を有すると共に前記第1のリード片上に搭載された半導体チップと、第1の導電部材と第2の導電部材を有すると共に前記半導体チップの上面の電極と前記第2のリード片とを電気的に接続する接続子を備え、さらに、前記第1の導電部材は前記半導体チップとほぼ同じ厚さを有すると共に前記第2のリード片上に搭載され、前記第2の導電部材は一方の端部側が前記半導体チップの上面の電極に接続されると共に他方の端部側が前記第1の接続子の上面に接続された事を特徴とする樹脂封止型半導体装置ことを特徴とするものとした。   In a resin-encapsulated semiconductor device in which a semiconductor chip is sealed in a resin package, the first lead piece and the second lead piece partially exposed from the resin package, and electrodes on both upper and lower sides and the first lead piece are provided. A semiconductor chip mounted on the lead piece, a first conductive member and a second conductive member, and a connector for electrically connecting the electrode on the upper surface of the semiconductor chip and the second lead piece; Further, the first conductive member has substantially the same thickness as the semiconductor chip and is mounted on the second lead piece, and one end side of the second conductive member serves as an electrode on the upper surface of the semiconductor chip. The resin-encapsulated semiconductor device is characterized in that it is connected and the other end side is connected to the upper surface of the first connector.

したがって接続子を構成する第1の導電部材の厚みを半導体チップによって変える事で各種の半導体チップに対応する事ができる。   Therefore, it is possible to cope with various semiconductor chips by changing the thickness of the first conductive member constituting the connector depending on the semiconductor chip.

前記第1のリード片、前記第2のリード片、前記第1の導電部材、前記第2の導電部材のいずれか一つ以上のものは、その本体部から突出して先端が前記樹脂パッケージのいずれかの側面まで達している引出部を少なくとも一つ又は二つ以上有する事を特徴とするとした。   Any one or more of the first lead piece, the second lead piece, the first conductive member, and the second conductive member protrudes from the main body portion, and the tip of any one of the resin packages It is characterized by having at least one or two or more drawer portions reaching the side surface.

したがって第1のリード片、第2のリード片、第1の導電部材、前記第2の導電部材のいずれか一つ以上のものからリード片引出し方向と垂直方向に樹脂パッケージ側面まで引出部が伸びているおり、切断分割前まで隣の引出部と繋がる事で大きな部品と組み立てる際に樹脂封止型半導体装置の位置決めが容易になる。   Therefore, the lead portion extends from one or more of the first lead piece, the second lead piece, the first conductive member, and the second conductive member to the side surface of the resin package in the direction perpendicular to the lead piece drawing direction. In addition, the resin-encapsulated semiconductor device can be easily positioned when assembling with a large component by being connected to the adjacent leading portion before the cutting division.

さらに前記引出部は、その本体部よりも幅が狭い事を特徴とするものとした。   Furthermore, the said drawer | drawing-out part shall be narrower than the main-body part.

したがって引出部を切断し易くなり本体部等へのストレスが小さくなる。   Therefore, it becomes easy to cut the drawer portion, and the stress on the main body portion and the like is reduced.

また前記引出部は、その本体部よりも幅が狭い事を特徴とするものとした。   Moreover, the said drawer | drawing-out part shall be narrower than the main-body part.

したがって引出部を切断し易くなり本体部等へのストレスが小さくなる。   Therefore, it becomes easy to cut the drawer portion, and the stress on the main body portion and the like is reduced.

さらに前記引出部は、前記第1のリード片及び前記第2のリード片が延在する方向と直交する方向に突出している事を特徴とするものとした。   Furthermore, the lead-out portion protrudes in a direction orthogonal to the direction in which the first lead piece and the second lead piece extend.

したがって第1のリード片及び第2のリード片と引出部とが重なり合わず、引出部の切断時に樹脂へダメージを与える事がない。   Therefore, the first lead piece and the second lead piece do not overlap with the lead portion, and the resin is not damaged when the lead portion is cut.

また前記第1のリード片、前記第2のリード片、前記第1の導電部材、前記2導電部材のいずれか二つ以上のものが前記引出部を有し、それぞれの前記引出部が前記樹脂パッケージを上面側から見たときに重なり合わないように配置されている事を特徴とするものとした。   Further, any two or more of the first lead piece, the second lead piece, the first conductive member, and the two conductive member have the lead portion, and each lead portion has the resin. The packages are arranged so that they do not overlap when viewed from the upper surface side.

したがって引出部の切断時に第1のリード片、第2のリード片と第1の導電部材及び前記2導電部材との重なり合いによる樹脂へのダメージが発生しない。   Therefore, the resin is not damaged due to the overlap between the first lead piece, the second lead piece, the first conductive member, and the two conductive members when the leading portion is cut.

さらに上記の樹脂封止型半導体装置の製造方法において、前記第1のリード片及び前記第2のリード片、並びに前記引出部を前記樹脂パッケージと同時に切断する工程を備える事を特徴とするものとした。   Furthermore, in the method for manufacturing the resin-encapsulated semiconductor device, the method further comprises a step of cutting the first lead piece, the second lead piece, and the lead portion simultaneously with the resin package. did.

したがって一つの切断分割工程でリード片等の全ての切断を一括して実行できる。   Therefore, all the cutting of the lead pieces and the like can be performed at a time in one cutting and dividing step.

本発明の樹脂封止型半導体装置は、半導体チップ厚さと同じ厚さの第1の導電部材のリード片と半導体チップを接続する接続子を半導体チップ上に載る第2の導電部材と二つの部品で構成する事で、半導体チップの寸法ごとに必要だった接続子の種類を減らす事が可能になり、樹脂封止型半導体装置の製造コストを低減できる。   The resin-encapsulated semiconductor device according to the present invention includes a first conductive member lead piece having the same thickness as the semiconductor chip thickness and a connector for connecting the semiconductor chip to the second conductive member and two components mounted on the semiconductor chip. With this configuration, it is possible to reduce the types of connectors necessary for each dimension of the semiconductor chip, and the manufacturing cost of the resin-encapsulated semiconductor device can be reduced.

さらにリード片、接続子から伸びた引出部によりそれぞれの部品が複数個つながる事で一体の部品となり多品種の半導体チップに対応する接続子とリード片で挟み込む構造をとる樹脂封止型半導体装置の接続子の組立時位置決めを容易にする事ができ、樹脂封止型半導体装置の生産管理が容易になる。   Furthermore, the lead piece and the lead-out part extending from the connector are connected to each other to form a single part, and the resin-encapsulated semiconductor device has a structure in which it is sandwiched between the connector and the lead piece corresponding to various types of semiconductor chips. Positioning during assembly of the connector can be facilitated, and production management of the resin-encapsulated semiconductor device is facilitated.

また各部品の引出部が上面から見て重ならない様配置され、引出部がそれぞれの部品の本体部より薄く形成される事で切断分割時にストレス少なく分割でき、樹脂封止部ごと切断分割する事も可能となる。   In addition, the drawer part of each part is arranged so that it does not overlap when viewed from the top, and the drawer part is thinner than the main part of each part, so that it can be divided with less stress when cutting and dividing, and the resin sealed part is cut and divided. Is also possible.

次に本発明を実施形態に基づいて説明する。図1は本発明の第1の実施形態の樹脂封止型半導体装置の斜視図であり、図2は本発明の第1の実施形態の樹脂封止型半導体装置の断面図である。なお図1は説明の便宜上樹脂部を透視した状態で表し、樹脂部は破線で記載している。図1及び図2において1a,1bはリード片、2は半導体チップ、3は第1金属片、4は第2金属片、7は樹脂部である。   Next, this invention is demonstrated based on embodiment. FIG. 1 is a perspective view of a resin-encapsulated semiconductor device according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the resin-encapsulated semiconductor device according to the first embodiment of the present invention. Note that FIG. 1 is shown in a state where the resin portion is seen through for convenience of explanation, and the resin portion is indicated by a broken line. 1 and 2, reference numerals 1a and 1b denote lead pieces, 2 denotes a semiconductor chip, 3 denotes a first metal piece, 4 denotes a second metal piece, and 7 denotes a resin portion.

第1の実施形態の樹脂封止型半導体装置は、リード片1aに半導体チップ2、リード片1bに半導体チップ2と同じ厚さを持つ第2金属片4を載せ、それらをまたぐ形で第1金属片を載せて樹脂封止している。リード片1a,1bは樹脂部7の底面に部分的に露出している。半導体チップ2は上面下面の両面に電極を持っている。またリード片1aは半導体チップ2の下面電極に接続されており、第1金属片の一端は半導体チップ2の上面電極に接続されている。さらに第2金属片4は第1金属片の他端とリード片1bの両方に接続されている。またこれらはハンダで接続されているので半導体チップ2の二つの電極は、リード片1a,1bと電気的に導通している。   In the resin-encapsulated semiconductor device of the first embodiment, the semiconductor chip 2 is placed on the lead piece 1a, and the second metal piece 4 having the same thickness as the semiconductor chip 2 is placed on the lead piece 1b. A metal piece is placed and sealed with resin. The lead pieces 1 a and 1 b are partially exposed on the bottom surface of the resin portion 7. The semiconductor chip 2 has electrodes on both the upper and lower surfaces. The lead piece 1 a is connected to the lower surface electrode of the semiconductor chip 2, and one end of the first metal piece is connected to the upper surface electrode of the semiconductor chip 2. Further, the second metal piece 4 is connected to both the other end of the first metal piece and the lead piece 1b. Since these are connected by soldering, the two electrodes of the semiconductor chip 2 are electrically connected to the lead pieces 1a and 1b.

第1金属片3及び第2金属片4は、図3に示した折曲部6を持つ接続子5と全く同様の機能を持つ。すなわち第1金属片3及び第2金属片4は、接続子5を複数のパーツで構成したものと言える。図1に示すように、第1金属片3及び第2金属片4はどちらも折曲部を形成していない。また本実施形態の樹脂封止型半導体装置では、搭載する半導体チップ2の厚さに応じた第2金属片4をその厚さの種類分だけ準備している。さらに搭載する半導体チップ2のチップサイズに応じた第1金属片3をそのチップサイズの種類分だけ準備している。   The first metal piece 3 and the second metal piece 4 have exactly the same function as the connector 5 having the bent portion 6 shown in FIG. In other words, it can be said that the first metal piece 3 and the second metal piece 4 are formed by connecting the connector 5 with a plurality of parts. As shown in FIG. 1, neither the 1st metal piece 3 nor the 2nd metal piece 4 forms the bending part. In the resin-encapsulated semiconductor device of this embodiment, the second metal piece 4 corresponding to the thickness of the semiconductor chip 2 to be mounted is prepared for the thickness type. Furthermore, the first metal piece 3 corresponding to the chip size of the semiconductor chip 2 to be mounted is prepared for the chip size.

したがって本実施形態の樹脂封止型半導体装置は、第1金属片及び第2金属片を搭載する半導体チップの厚さ及びチップサイズ分だけ準備する必要があるが、折曲加工を必要としないので、多数の金型を必要とする従来技術の接続子よりも製造コスト的に有利になる。また折曲加工をした接続子では、折曲状態にバラツキが出て樹脂封止型半導体装置の品質を低下させる事があった。これに対して本実施形態では、第2金属片4の厚さにバラツキがなければ第1金属片3の長さに多少のバラツキがあっても全く問題がない。さらに第2金属片4の厚さを均一に保つ事は技術的に非常に容易である。   Therefore, the resin-encapsulated semiconductor device of this embodiment needs to be prepared for the thickness and chip size of the semiconductor chip on which the first metal piece and the second metal piece are mounted, but does not require bending. This is advantageous in terms of manufacturing cost over the prior art connector that requires a large number of molds. In addition, the bent connector has a variation in the bent state, which may deteriorate the quality of the resin-encapsulated semiconductor device. On the other hand, in this embodiment, if there is no variation in the thickness of the second metal piece 4, there is no problem even if there is some variation in the length of the first metal piece 3. Furthermore, it is technically very easy to keep the thickness of the second metal piece 4 uniform.

なお以上の説明においては、図3の接続子に相当するものとして第1金属片及び第2金属片を用いたが、導電性があれば導電性有機材料や導電物質を含有する有機材料など金属以外の材料を併用する事も可能である。またリード片1bと第2金属片4や、その他のもの相互接続に接着剤を使う事もできる。さらにリード片1a,1bは樹脂部7の底面に露出するのではなく、側面に露出する又は側面と底面との両方に露出するものであっても良い。また第2金属片を2個以上で構成するようにして半導体チップの厚さの違いに対応しても良い。   In the above description, the first metal piece and the second metal piece are used as corresponding to the connector of FIG. 3, but if there is conductivity, a metal such as a conductive organic material or an organic material containing a conductive material. It is also possible to use other materials in combination. It is also possible to use an adhesive for the interconnection between the lead piece 1b and the second metal piece 4 and others. Furthermore, the lead pieces 1a and 1b may be exposed on the side surface or exposed on both the side surface and the bottom surface instead of being exposed on the bottom surface of the resin portion 7. Further, the difference in thickness of the semiconductor chip may be accommodated by forming the second metal piece by two or more pieces.

図5は本発明の第2の実施形態の樹脂封止型半導体装置の斜視図であり、図6は本発明の第2の実施形態の樹脂封止型半導体装置の平面図である。なお図5及び図6は説明の便宜上樹脂部を透視した状態で表し、樹脂部は破線で記載している。図5及び図6において、8a,8b,8cは引出部であり、その他の符号は図1及び図2と同じものを示している。   FIG. 5 is a perspective view of a resin-encapsulated semiconductor device according to the second embodiment of the present invention, and FIG. 6 is a plan view of the resin-encapsulated semiconductor device according to the second embodiment of the present invention. 5 and 6 are shown in a state where the resin portion is seen through for convenience of explanation, and the resin portion is indicated by a broken line. 5 and 6, reference numerals 8a, 8b, and 8c denote drawers, and the other reference numerals are the same as those in FIGS.

第2の実施形態の樹脂封止型半導体装置は、その基本的構成において第1の実施形態のものと同じであるが、図5及び図6に示すように、リード片1b、第2金属片4及び第1金属片3において引出部8a,8b,8cを設けている点が異なる。引出部8a,8b,8cは、リード片1b、第2金属片4及び第1金属片3の本体からリード片1a,1bの引出方向と垂直なる方向に樹脂パッケージ側面まで伸びている。また引出部8a,8b,8cは、樹脂封止型半導体装置を平面的に見たときに重なり合わないように配置されている。   The resin-encapsulated semiconductor device of the second embodiment is the same as that of the first embodiment in its basic configuration, but as shown in FIGS. 5 and 6, the lead piece 1b and the second metal piece 4 and the first metal piece 3 are different in that the lead portions 8a, 8b and 8c are provided. The lead portions 8a, 8b, 8c extend from the main body of the lead piece 1b, the second metal piece 4, and the first metal piece 3 to the side surface of the resin package in a direction perpendicular to the lead direction of the lead pieces 1a, 1b. The lead portions 8a, 8b, 8c are arranged so as not to overlap when the resin-encapsulated semiconductor device is viewed in plan.

さらに引出部8a,8b,8cは、樹脂封止型半導体装置の製造過程においてそれぞれが隣りの引出部に繋がった状態、すなわち図5の樹脂封止型半導体装置が多数連接した状態になっている。そして樹脂部7を切断分割するときに引出部も切断分割される。   Furthermore, the lead portions 8a, 8b, and 8c are connected to the adjacent lead portions in the manufacturing process of the resin-encapsulated semiconductor device, that is, a state in which many resin-encapsulated semiconductor devices in FIG. 5 are connected. . And when the resin part 7 is cut and divided, the lead-out part is also cut and divided.

したがって樹脂部7を切断分割するまでリード片1b、第2金属片4及び第1金属片3は、多数の同一形状のものがそれぞれの引出部で繋がっている為、切断分割までそれぞれを一体で取り扱う事ができる。また部品サイズが大きくって取り扱い易いので、リード片1b、金属片3及び金属片4の搭載精度が向上する。言い換えるならばリード片、第1金属片及び第2金属片は、従来技術の接続子のように1個ずつ搭載するのではなく、多数の部品を一括して搭載できるので製造工程を大幅に簡素化、効率化できる。これは個別に折曲加工を必要とした従来技術の接続子の搭載工程を板状又は帯状に多数連なった第1金属片及び第2金属片を切断分割する工程に置き換える事によって生まれた大きな利点である。   Therefore, since the lead piece 1b, the second metal piece 4, and the first metal piece 3 are connected to each other by the respective lead portions until the resin portion 7 is cut and divided, each of them is integrated until the cutting and dividing. It can be handled. Further, since the component size is large and easy to handle, the mounting accuracy of the lead piece 1b, the metal piece 3 and the metal piece 4 is improved. In other words, the lead piece, the first metal piece, and the second metal piece are not mounted one by one as in the prior art connector, but a large number of parts can be mounted together, greatly simplifying the manufacturing process. And efficiency. This is a great advantage born by replacing the mounting process of the prior art connector, which requires individual bending, with a process of cutting and dividing the first metal piece and the second metal piece, which are arranged in a number of plates or bands. It is.

また引出部8a,8b,8cは、リード片1a,1bと引出方向と異なる方向に伸びているので、樹脂部7を切断分割するときに樹脂が引出部とリード片とに挟まれて変形する事がない。引出部同士も平面的に見て重なり合わないので、同様に切断分割時の樹脂の変形を防止できる。また引出部を重なり合うように配置した場合、引出部間に強度上の弱点となる薄い樹脂層ができるが、本実施形態では各部品の配置に対する配慮をしたので薄い樹脂層ができる事はない。   Since the lead portions 8a, 8b, and 8c extend in a direction different from the lead pieces 1a and 1b, the resin is sandwiched between the lead portion and the lead piece when the resin portion 7 is cut and divided. There is nothing. Since the drawing portions do not overlap each other in plan view, the deformation of the resin at the time of cutting and dividing can be similarly prevented. Further, when the drawn portions are arranged so as to overlap, a thin resin layer that becomes a weak point in strength is formed between the drawn portions, but in this embodiment, since the arrangement of each component is taken into consideration, there is no thin resin layer.

なおリード片、第1金属片及び第2金属片のすべてに引出部を設ける必要はなく、これらの内のいずれか一つ又は二つに設けるようにする事も可能である。また第1金属片3の引出部8aを形成する位置は図5及び図6の位置に限られるものではなく、他の引出部と重なり合わないのならば別の部位であっても良い。   In addition, it is not necessary to provide a lead part in all of a lead piece, a 1st metal piece, and a 2nd metal piece, and it is also possible to provide in any one or two of these. Further, the position where the lead part 8a of the first metal piece 3 is formed is not limited to the position shown in FIGS. 5 and 6, and may be another part as long as it does not overlap with the other lead part.

図7は本発明の第3の実施形態の樹脂封止型半導体装置の斜視図であり、図8は本発明の第4の実施形態の樹脂封止型半導体装置の斜視図である。なお図7及び図8は説明の便宜上樹脂部を透視した状態で表し、樹脂部は破線で記載している。図7及び図8の符号は図5及び図6と同じものを示している。   FIG. 7 is a perspective view of a resin-encapsulated semiconductor device according to a third embodiment of the present invention, and FIG. 8 is a perspective view of a resin-encapsulated semiconductor device according to a fourth embodiment of the present invention. 7 and 8 are shown in a state where the resin portion is seen through for convenience of description, and the resin portion is indicated by a broken line. 7 and 8 indicate the same reference numerals as those in FIGS.

第3及び第4の実施形態の樹脂封止型半導体装置は、その基本的構成において第2の実施形態のものと同じであるが、図7及び図8に示すように、引出部8a,8b,8cの前部又は一部がそれぞれを設けた本体部よりも薄くなっている点が異なる。   The resin-encapsulated semiconductor devices of the third and fourth embodiments are the same as those of the second embodiment in their basic configurations, but as shown in FIGS. 7 and 8, the lead-out portions 8a and 8b , 8c is different in that the front part or part of each part is thinner than the main body provided with each.

したがって引出部8a,8b,8cの構成は図5及び図6のものよりも若干複雑になるが、樹脂部7を切断分割するときに薄く形成された部分を切断分割する事でより少ない力で分割する事ができ、樹脂部7に大きなストレスをかける事がない。すなわち少ないストレスで分割できる為、樹脂部7ごとに切断分割する事が相当容易にできる。なお引出部8a,8b,8cの切断分割を容易にする手段は、引出部8a,8b,8cの厚さを薄くするだけでなく、幅を狭くする事でも達成可能である。さらに、厚さを薄くすることと幅を狭くすることを組み合わせると切断分割がより容易になる。   Therefore, the structure of the lead-out portions 8a, 8b, and 8c is slightly more complicated than that of FIGS. 5 and 6, but when the resin portion 7 is cut and divided, the thin portion is cut and divided to use less force. The resin portion 7 can be divided and no great stress is applied. That is, since it can be divided with less stress, it is possible to cut and divide each resin part 7 considerably easily. The means for facilitating the cutting and dividing of the lead portions 8a, 8b, 8c can be achieved not only by reducing the thickness of the lead portions 8a, 8b, 8c but also by reducing the width. Further, the combination of reducing the thickness and reducing the width makes it easier to cut and divide.

本発明の第1の実施形態の樹脂封止型半導体装置の斜視図である。1 is a perspective view of a resin-encapsulated semiconductor device according to a first embodiment of the present invention. 本発明の第1の実施形態の樹脂封止型半導体装置の断面図である。1 is a cross-sectional view of a resin-encapsulated semiconductor device according to a first embodiment of the present invention. 従来の樹脂封止型半導体装置の斜視図である。It is a perspective view of the conventional resin-encapsulated semiconductor device. 従来の樹脂封止型半導体装置の断面図である。It is sectional drawing of the conventional resin-encapsulated semiconductor device. 本発明の第2の実施形態の樹脂封止型半導体装置の斜視図である。It is a perspective view of the resin-sealed semiconductor device of the 2nd Embodiment of this invention. 本発明の第2の実施形態の樹脂封止型半導体装置の平面図である。It is a top view of the resin-sealed semiconductor device of the 2nd Embodiment of this invention. 本発明の第3の実施形態の樹脂封止型半導体装置の斜視図である。It is a perspective view of the resin-sealed semiconductor device of the 3rd Embodiment of this invention. 本発明の第4の実施形態の樹脂封止型半導体装置の斜視図である。It is a perspective view of the resin-sealed semiconductor device of the 4th Embodiment of this invention.

符号の説明Explanation of symbols

1a リード片
1b リード片
2 半導体チップ
3 第1金属片
4 第2金属片
5 接続子
6 折曲部
7 樹脂部
8a 引出部
8b 引出部
8c 引出部
DESCRIPTION OF SYMBOLS 1a Lead piece 1b Lead piece 2 Semiconductor chip 3 1st metal piece 4 2nd metal piece 5 Connector 6 Bending part 7 Resin part 8a Lead part 8b Lead part 8c Lead part

Claims (5)

樹脂パッケージに半導体チップを封止した樹脂封止型半導体装置において、
前記樹脂パッケージから部分的に露出した第1のリード片及び第2のリード片と、
上下両面に電極を有すると共に前記第1のリード片上に搭載された半導体チップと、
第1の導電部材と第2の導電部材を有すると共に前記半導体チップの上面の電極と前記第2のリード片とを電気的に接続する接続子を備え、
さらに、前記第1の導電部材は前記半導体チップとほぼ同じ厚さを有すると共に前記第2のリード片上に搭載され、前記第2の導電部材は一方の端部側が前記半導体チップの上面の電極に接続されると共に他方の端部側が前記第1の接続子の上面に接続され
前記第1のリード片、前記第2のリード片、前記第1の導電部材、前記第2の導電部材のいずれか一つ以上のものは、その本体部から突出して先端が前記樹脂パッケージのいずれかの側面まで達している引出部を一つ又は二つ以上有し、
前記引出部は、その本体部よりも厚さが薄い事を特徴とする樹脂封止型半導体装置。
In a resin-encapsulated semiconductor device in which a semiconductor chip is encapsulated in a resin package,
A first lead piece and a second lead piece partially exposed from the resin package;
A semiconductor chip having electrodes on both upper and lower surfaces and mounted on the first lead piece;
A connector having a first conductive member and a second conductive member and electrically connecting the electrode on the upper surface of the semiconductor chip and the second lead piece;
Furthermore, the first conductive member has substantially the same thickness as the semiconductor chip and is mounted on the second lead piece, and one end side of the second conductive member serves as an electrode on the upper surface of the semiconductor chip. And the other end side is connected to the upper surface of the first connector ,
Any one or more of the first lead piece, the second lead piece, the first conductive member, and the second conductive member protrudes from the main body portion, and the tip of any one of the resin packages Have one or more drawers that reach these sides,
The lead-out portion is a resin-encapsulated semiconductor device characterized in that the drawer portion is thinner than the main body portion .
前記引出部は、その本体部よりも幅が狭い事を特徴とする請求項に記載の樹脂封止型半導体装置。 The lead part is resin-encapsulated semiconductor device according to claim 1, wherein the width is narrower than its body part. 前記引出部は、前記第1のリード片及び前記第2のリード片が延在する方向と直交する方向に突出している事を特徴とする請求項1又は請求項に記載の樹脂封止型半導体装置。 The lead part is resin-sealed as claimed in claim 1 or claim 2, characterized in that the first lead piece and the second lead piece protrudes in a direction perpendicular to the direction extending Semiconductor device. 前記第1のリード片、前記第2のリード片、前記第1の導電部材、前記導電部材のいずれか二つ以上のものが前記引出部を有し、それぞれの前記引出部が前記樹脂パッケージを上面側から見たときに重なり合わないように配置されている事を特徴とする請求項に記載の樹脂封止型半導体装置。 The first lead piece, the second lead piece, the first conductive member, wherein either two or more of the second conductive member having said lead portion, each of the lead-out portion wherein 4. The resin-encapsulated semiconductor device according to claim 3 , wherein the resin packages are arranged so as not to overlap when viewed from the upper surface side. 請求項又は請求項に記載の樹脂封止型半導体装置の製造方法において、前記第1のリード片及び前記第2のリード片、並びに前記引出部を前記樹脂パッケージと同時に切断する工程を備える事を特徴とする樹脂封止型半導体装置の製造方法。 Comprising the method of manufacturing a resin-sealed semiconductor device according to claim 3 or claim 4, wherein the first lead piece and the second lead piece, and a step of cutting the lead-out portion of the resin package at the same time A method of manufacturing a resin-encapsulated semiconductor device characterized by the above.
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