JP4454270B2 - Power supply heat dissipation structure - Google Patents

Power supply heat dissipation structure Download PDF

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JP4454270B2
JP4454270B2 JP2003319581A JP2003319581A JP4454270B2 JP 4454270 B2 JP4454270 B2 JP 4454270B2 JP 2003319581 A JP2003319581 A JP 2003319581A JP 2003319581 A JP2003319581 A JP 2003319581A JP 4454270 B2 JP4454270 B2 JP 4454270B2
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heat dissipation
substrate
base
power supply
semiconductor element
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JP2005086149A (en
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賢胤 山田
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Shindengen Electric Manufacturing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Description

本発明は、電源装置の放熱構造に係り、特に基板上に立設される放熱基体を備えた放熱構造に関するものである。   The present invention relates to a heat dissipation structure for a power supply device, and more particularly to a heat dissipation structure provided with a heat dissipation base standing on a substrate.

電源装置は、大電流または高電圧に対応する回路を備えているものが多いので、放熱対策が大きな課題となる。例えば、特許文献1に記載の発明は、高周波加熱装置のインバータ電源の放熱構造に係るものである。この発明は、基板上の高圧トランスの1次巻き線をフェライトコアの周りに円柱状に巻き付け、円柱形状をした1次巻き線の円周面がプリント基板に対して垂直となるように高圧トランスを設置し、1次巻き線が形成する円柱形状の円周面と対向する位置に、半導体素子を貼り付けた放熱フィンを配置したものである。このような構成によって、放熱フィンと高圧トランスとの間に空隙ができるので、冷却ファンからのエアの流れがスムーズになり、実装密度が高い装置でも半導体素子等の冷却効果を向上できる。   Since many power supply devices are provided with a circuit corresponding to a large current or a high voltage, a countermeasure for heat radiation becomes a major issue. For example, the invention described in Patent Document 1 relates to a heat dissipation structure for an inverter power source of a high-frequency heating device. In the present invention, a primary winding of a high-voltage transformer on a substrate is wound around a ferrite core in a cylindrical shape, and the circumferential surface of the cylindrical primary winding is perpendicular to a printed circuit board. The heat dissipating fin with the semiconductor element attached is disposed at a position facing the cylindrical circumferential surface formed by the primary winding. With such a configuration, since a gap is formed between the radiation fin and the high-voltage transformer, the air flow from the cooling fan becomes smooth, and the cooling effect of the semiconductor element and the like can be improved even in a device having a high mounting density.

しかしながら、電源装置に対する小型化の要請は益々高まっているので、基板上の部品の配置を変更する余地は小さくなってきており、この手段によってエアの流れをスムーズにすることは次第に困難になっている。さらに、放熱基体に貼り付けられた半導体素子のリード部にノイズ対策用のビーズコアを設けることが一般化しており、このビーズコアによってエアの流れが妨げられやすくなっている。もちろん半導体素子に正対する位置からエアを当てれば十分放熱することができるが、電源装置の小型化がさらに求められている状況下で、冷却ファンの設置位置を任意に選択することは極めて困難である。
特開2001−185339号公報(第2−4頁、図1)
However, as the demand for miniaturization of power supply devices is increasing, the room for changing the arrangement of components on the board is becoming smaller, and it becomes increasingly difficult to smooth the air flow by this means. Yes. Furthermore, it has become common to provide a bead core for noise suppression at the lead portion of the semiconductor element attached to the heat dissipation base, and this bead core tends to hinder the flow of air. Of course, if air is applied from the position facing the semiconductor element, heat can be dissipated sufficiently, but it is extremely difficult to arbitrarily select the location of the cooling fan in a situation where further downsizing of the power supply device is required. is there.
JP 2001-185339 A (page 2-4, FIG. 1)

本発明は、上述した事情に鑑みてなされたもので、電源装置の放熱構造において、基板上の部品及び冷却ファンの配置の変更を必要とせず、かつ、電源装置の小型化の妨げにならないものを提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and in the heat dissipation structure of the power supply device, it is not necessary to change the arrangement of components and cooling fans on the board and does not hinder downsizing of the power supply device. The purpose is to provide.

上記の課題を解決するために、本発明は、基板から立ち上がるように設けられた放熱基体を備えた電源装置の放熱構造において、前記放熱基体は、その基端側の半導体素子を貼り付ける部位に前記基板との間に間隙を確保するための切欠部を形成したことを特徴とするものとした。   In order to solve the above-described problems, the present invention provides a heat dissipation structure for a power supply device including a heat dissipation base provided so as to rise from a substrate, wherein the heat dissipation base is attached to a portion where a semiconductor element on the base end side is attached. A notch for securing a gap between the substrate and the substrate is formed.

したがって、電源装置の内部を流れるエアが放熱基体と基板との間を通り抜けるようになるので、電源装置の内部のエアの流通性が向上して放熱効果が高まる。   Therefore, since air flowing inside the power supply device passes between the heat dissipation base and the substrate, the air circulation inside the power supply device is improved and the heat dissipation effect is enhanced.

なお、上記の発明において、前記切欠部の前記基板表面からの高さは、前記半導体素子のリード部に取り付けたビーズコアの上端の高さとほぼ等しいものにもできる。   In the above invention, the height of the notch from the substrate surface may be substantially equal to the height of the upper end of the bead core attached to the lead portion of the semiconductor element.

また、本発明は、基板から立ち上がるように設けられた放熱基体を備えた電源装置の放熱構造において、前記放熱基体と前記基板との間に介在して設けられたスペーサを備え、前記放熱基体は、その基端側の縁辺が前記スペーサによって前記基板から離隔していることを特徴とするものとした。   Further, the present invention provides a heat dissipation structure of a power supply device including a heat dissipation base provided so as to rise from a substrate, and includes a spacer provided between the heat dissipation base and the substrate, The base side edge is separated from the substrate by the spacer.

したがって、電源装置の内部を流れるエアが放熱基体と基板との間を通り抜けるようになるので、電源装置の内部のエアの流通性が向上して放熱効果が高まる。くわえて、放熱基体の基端側の切欠加工が不要である。   Therefore, since air flowing inside the power supply device passes between the heat dissipation base and the substrate, the air circulation inside the power supply device is improved and the heat dissipation effect is enhanced. In addition, the notch processing on the base end side of the heat radiating base is not necessary.

さらに、上記の発明において、前記スペーサの上端の前記基板表面からの高さは、前記半導体素子のリード部に取り付けたビーズコアの上端の高さとほぼ等しいものにもできる。   Further, in the above invention, the height of the upper end of the spacer from the substrate surface can be substantially equal to the height of the upper end of the bead core attached to the lead portion of the semiconductor element.

本発明は、放熱基体と基板との間をエアが通り抜けるようになるので、ビーズコア周辺のエアの流通性が向上し、半導体素子及びビーズコア放熱効果が高まる。また、放熱基体と基板との間に間隙を設けることは部品の配置等に全く影響しないので、電源装置の小型化を妨げることがない。さらに、放熱基体の基端側が露出することによって、放熱に寄与する放熱基体の表面積が増えるので、この表面積に相当する分だけ放熱基体の容積を小さくすることが可能になる。 In the present invention, since air passes between the heat dissipation base and the substrate, air circulation around the bead core is improved, and the heat dissipation effect of the semiconductor element and the bead core is enhanced. Further, providing a gap between the heat dissipation base and the substrate does not affect the arrangement of components at all, and thus does not hinder downsizing of the power supply device. Furthermore, since the surface area of the heat dissipation base that contributes to heat dissipation increases by exposing the base end side of the heat dissipation base, the volume of the heat dissipation base can be reduced by an amount corresponding to the surface area.

本発明の実施の形態においては、放熱基体と基板との間、特に放熱基体の半導体素子を貼り付ける部位に間隙を設けたことに最大の特徴がある。図4は、本発明の放熱構造と従来技術の放熱構造との冷却効果に関する比較実験結果を示す表である。   In the embodiment of the present invention, the greatest feature is that a gap is provided between the heat dissipating base and the substrate, in particular, at a portion where the semiconductor element of the heat dissipating base is attached. FIG. 4 is a table showing the results of a comparative experiment relating to the cooling effect between the heat dissipation structure of the present invention and the heat dissipation structure of the prior art.

この実験においては、入力電圧がAC180V、出力電圧が48V、出力電流が158Aの整流器を用い、放熱フィンのない板状の放熱基体を準備した。この放熱基体の表裏には、各相に整流用ダイオード10個とフライホイールダイオード4個を貼り付けた。また、本発明の放熱構造については、後述する実施例2のようなスペーサを設けることによって、放熱基体と基板との間に約10mmの間隙を設けた。この間隙は、これらのダイオードに設けたビーズコアの上端部の高さに相当する。これに対して、従来技術の放熱構造では放熱構造と基板とを接した状態にした。また、スペーサ以外の部分は、両構造ともすべて同一の構成とした。そして、整流器に電圧入力して放熱基体の周囲雰囲気が50℃になった時点におけるそれぞれの構造の測定部位の温度上昇を測定した。なお、温度測定した部位1は放熱基体の支持部付近に位置する整流用ダイオード側のビーズコアであり、部位2は放熱基体の中央付近に位置するフライホイールダイオード側のビーズコアである。   In this experiment, a rectifier having an input voltage of AC 180 V, an output voltage of 48 V, and an output current of 158 A was used, and a plate-like heat radiating base without heat radiating fins was prepared. Ten rectifying diodes and four flywheel diodes were attached to each phase on the front and back of the heat dissipation base. In the heat dissipation structure of the present invention, a spacer as in Example 2 to be described later is provided, thereby providing a gap of about 10 mm between the heat dissipation base and the substrate. This gap corresponds to the height of the upper end of the bead core provided in these diodes. On the other hand, in the heat dissipation structure of the prior art, the heat dissipation structure and the substrate are in contact with each other. The parts other than the spacers have the same configuration in both structures. And the voltage rise was input into the rectifier, and the temperature rise of the measurement site | part of each structure at the time of the ambient atmosphere of a thermal radiation base | substrate becoming 50 degreeC was measured. The temperature-measured portion 1 is a rectifying diode-side bead core located near the support portion of the heat dissipation base, and the portion 2 is a flywheel diode-side bead core located near the center of the heat dissipation base.

図4から分かるように、放熱基体と基板との間に間隙を設けることによって、放熱基体の冷却効果を大幅に高められることが明確となった。また、発明者の他の実験を含めた研究結果によれば、この間隙は、電源装置に冷却ファンを設けた場合だけでなく、自然空冷のみで冷却する場合にも有効であることが分かった。以下に、この特徴を有する実施例について説明する。   As can be seen from FIG. 4, it has been clarified that the cooling effect of the heat dissipation base can be greatly enhanced by providing a gap between the heat dissipation base and the substrate. In addition, according to research results including other experiments by the inventors, it was found that this gap is effective not only when a cooling fan is provided in the power supply device but also when cooling only by natural air cooling. . An embodiment having this feature will be described below.

図1は、本発明の第1の実施例に係る電源装置の放熱構造の説明図である。図1において、10は放熱基体、11は支持部、12は切欠部、13a,13bは実装用平坦面、14は放熱フィン、20は基板、21a,21bは半導体素子、22はリード部、23はビーズコアを示す。なお、図1において示した放熱構造は、電源装置の筐体内に収納されるものであり、また基板20上には配線パターンが形成されると共に多数の電子部品が実装されるが、説明の便宜上、筐体、配線パターン及び本発明に関係のない電子部品はその記載を省略している。   FIG. 1 is an explanatory diagram of a heat dissipation structure for a power supply device according to a first embodiment of the present invention. In FIG. 1, 10 is a heat dissipation base, 11 is a support portion, 12 is a notch, 13a and 13b are flat surfaces for mounting, 14 is a heat dissipation fin, 20 is a substrate, 21a and 21b are semiconductor elements, 22 is a lead portion, 23 Indicates a bead core. The heat dissipation structure shown in FIG. 1 is housed in the casing of the power supply apparatus, and a wiring pattern is formed on the substrate 20 and a large number of electronic components are mounted. Description of the casing, the wiring pattern, and the electronic parts not related to the present invention is omitted.

図1(a)は、第1の実施例に係る電源装置の放熱構造の斜視図である。図1(a)に示すように、放熱基体10は、基板20上に立ち上がった状態に設けられており、さらに表裏両面に実装用平坦面13a及び13bが形成されている。実装用平坦面13a及び13bは、放熱基体10の下部に形成されており、半導体素子21a,21bからの熱を吸収する。また、放熱基体10の上部には放熱フィン14が形成されている。放熱フィン14は、半導体素子21a,21bから放熱基体10の上部12に伝わった熱を周辺雰囲気中に放散させる役割を果たす。なお、放熱基体10の上端部に電源装置の筐体を接触させれば、筐体も放熱構造の一部となるので、さらに放熱効率を向上させることが可能になる。また、放熱基体10に対してあまり放熱能力が要求されない、または放熱基体10の上端部に電源装置の筐体を接触させるなど放熱のための補助手段を設けている場合には、放熱フィン14を省略して放熱基体10の全体形状を板状に形成することも可能である。   FIG. 1A is a perspective view of the heat dissipation structure of the power supply device according to the first embodiment. As shown in FIG. 1A, the heat radiating base 10 is provided in a state of rising on the substrate 20, and mounting flat surfaces 13a and 13b are formed on both the front and back surfaces. The mounting flat surfaces 13a and 13b are formed below the heat dissipation base 10 and absorb heat from the semiconductor elements 21a and 21b. Further, heat radiating fins 14 are formed on the heat radiating base 10. The heat radiating fins 14 serve to dissipate heat transferred from the semiconductor elements 21a and 21b to the upper portion 12 of the heat radiating base 10 into the surrounding atmosphere. Note that if the casing of the power supply device is brought into contact with the upper end portion of the heat dissipation base 10, the casing also becomes a part of the heat dissipation structure, so that the heat dissipation efficiency can be further improved. In addition, when heat dissipation capability is not required for the heat dissipation base 10 or when auxiliary means for heat dissipation is provided, such as bringing the casing of the power supply device into contact with the upper end of the heat dissipation base 10, the heat dissipation fins 14 are provided. It is also possible to omit the heat dissipation base 10 and form the entire shape of the heat dissipation base 10 in a plate shape.

半導体素子21a,21bのリード部22には、ノイズ対策としてビーズコア23を設けている。ビーズコア23は、円筒状に形成されており、その内部にリード部23を通して設けられる。なお、ビーズコア23をリード部22の所定の部位に保持しておくために、接着剤によってビーズコア23をリード部22に付着させる場合もある。   The lead portions 22 of the semiconductor elements 21a and 21b are provided with a bead core 23 as a noise countermeasure. The bead core 23 is formed in a cylindrical shape, and is provided through the lead portion 23 therein. In addition, in order to hold the bead core 23 at a predetermined portion of the lead portion 22, the bead core 23 may be attached to the lead portion 22 with an adhesive.

図1(b)は、図1(a)のA−A線断面図であり、半導体素子を放熱基体10の下端部の左右両端部を除く部位に多数貼り付けた例を示している。図1(b)に示すように、放熱基体10の下端部の半導体素子の貼付部位には切欠部12が形成されている。切欠部12は、放熱基体10と基板20との間に間隙を設けるためのものであり、冷却ファンから送られるエアが吹き抜けるようにするためのものである。エアが吹き抜けることにより、半導体素子及びビーズコアの冷却が促進される。   FIG. 1B is a cross-sectional view taken along the line AA in FIG. 1A, and shows an example in which a large number of semiconductor elements are attached to portions other than the left and right end portions of the lower end portion of the heat dissipation base 10. As shown in FIG. 1 (b), a notch 12 is formed at the semiconductor element pasting portion at the lower end of the heat dissipation base 10. The notch 12 is for providing a gap between the heat dissipation base 10 and the substrate 20 and for blowing air sent from the cooling fan. By blowing air, cooling of the semiconductor element and the bead core is promoted.

ところで、切欠部12は、ビーズコア23の上端部とほぼ等しい高さを持つことが望ましい。以下にその理由について述べる。図2は、切欠部とビーズコアとの高さの関係を示す断面図である。図2において、h1は基板表面からの切欠部12の高さ、h2は基板表面からビーズコア23の上端部までの高さ、h3は基板表面から半導体素子21aのモールド部の下端部までの高さを示す。   By the way, it is desirable that the notch 12 has a height substantially equal to the upper end of the bead core 23. The reason is described below. FIG. 2 is a cross-sectional view showing the height relationship between the notch and the bead core. In FIG. 2, h1 is the height of the notch 12 from the substrate surface, h2 is the height from the substrate surface to the upper end of the bead core 23, and h3 is the height from the substrate surface to the lower end of the mold part of the semiconductor element 21a. Indicates.

ビーズコア23の外径は、リード部22の厚さ(幅)よりも相当程度大きい。リード部22にビーズコア23を通すと、ビーズコア23同士、またはビーズコア23とリード部22もしくは放熱基体10との間隔は、ビーズコア23を設けないときのリード部22同士、またはリード部22と放熱基板10との間隔よりもはるかに狭くなる。したがって、ビーズコア23を設けると、半導体素子冷却ファンから送られるエアの流れが阻害されて、リード部22付近における放熱性が低下する。   The outer diameter of the bead core 23 is considerably larger than the thickness (width) of the lead portion 22. When the bead cores 23 are passed through the lead portions 22, the bead cores 23, or the interval between the bead cores 23 and the lead portions 22 or the heat dissipation base 10, is the lead portions 22 when the bead cores 23 are not provided, or the lead portions 22 and the heat dissipation substrate 10. It is much narrower than the interval. Therefore, when the bead core 23 is provided, the flow of air sent from the semiconductor element cooling fan is hindered, and the heat dissipation near the lead portion 22 is lowered.

そこで、ビーズコア23の上端部とほぼ等しい高さを持つ切欠部12を形成する、すなわち、図2のh1とh2とをほぼ等しくすると、先に述べたように、ビーズコア23の周辺のエアが切欠部12を通り抜けて放熱性が向上する。もしも、切欠部12の高さがビーズコア23の上端部のそれよりも高い、例えばh1とh3とを等しくすると、リード部22付近における放熱性はさらに改善される。しかし、放熱基体10への半導体素子の取り付けを手作業で行う関係上、ある程度のマージンがないと、例えば半導体素子21aの下端部付近が実装用平坦面13aからはみ出して放熱基体10に接着されないようなケースが発生する。このようなはみ出し部分があると、半導体素子の放熱に支障を生じるので好ましくない。逆に、切欠部12の高さがビーズコア23の上端部の高さよりも低いと、切欠部12を通り抜けるエアの量が減るので、リード部22付近における放熱性はあまり改善されない。したがって、図2のh1とh2とをほぼ等しくすることが最も望ましいと言える。   Therefore, if the notch 12 having a height substantially equal to the upper end of the bead core 23 is formed, that is, if h1 and h2 in FIG. 2 are substantially equal, the air around the bead core 23 is notched as described above. Heat dissipation is improved by passing through the portion 12. If the height of the notch 12 is higher than that of the upper end of the bead core 23, for example, h1 and h3 are equal, the heat dissipation near the lead 22 is further improved. However, if the semiconductor element is manually attached to the heat radiating base 10, if there is no margin, for example, the vicinity of the lower end of the semiconductor element 21a may not protrude from the mounting flat surface 13a and be bonded to the heat radiating base 10. Case occurs. Such a protruding portion is not preferable because it causes troubles in heat dissipation of the semiconductor element. On the contrary, if the height of the notch portion 12 is lower than the height of the upper end portion of the bead core 23, the amount of air passing through the notch portion 12 is reduced, so that the heat dissipation in the vicinity of the lead portion 22 is not improved so much. Therefore, it can be said that it is most desirable to make h1 and h2 in FIG. 2 substantially equal.

なお、切欠部12は、半導体素子の貼付部位に対応して形成されるので、例えば実装用平坦面13aの左右両端部に加えて中央付近にも半導体素子を貼り付けない場合には、中央付近には切欠部12を形成しなくても良い。   In addition, since the notch 12 is formed corresponding to the part to which the semiconductor element is applied, for example, when the semiconductor element is not attached to the vicinity of the center in addition to the left and right ends of the mounting flat surface 13a, It is not necessary to form the notch portion 12.

また、切欠部12を形成していない下端部の左右両端部は、放熱基体10を基板20上に立ち上がった状態で支持する支持部11となる。なお、実装用平坦面13aの中央付近に半導体素子を貼り付けない場合には、この付近にも支持部を形成することが可能となる。もちろん、中央付近以外の部位であっても、半導体素子を貼り付けない部位には支持部を形成可能である。   Further, both left and right end portions of the lower end portion where the notch portion 12 is not formed serve as a support portion 11 that supports the heat dissipating base body 10 in a state of rising on the substrate 20. In the case where the semiconductor element is not attached near the center of the mounting flat surface 13a, a support portion can be formed in the vicinity. Of course, a support portion can be formed in a portion other than the vicinity of the center where the semiconductor element is not attached.

以上のように、上述の放熱構造によれば、実装用平坦面13a及び13bに貼り付けられた半導体素子21a,21bのリード部22付近のエアの流通が向上するので、この付近の放熱性を改善することができる。もちろん、冷却ファンの設置位置を変更する必要はない。また、放熱基体10の下端部が露出するので、この付近も切欠部12を通り抜けるエアによって冷却され、放熱基体10の放熱性も向上する。   As described above, according to the above-described heat dissipation structure, air circulation near the lead portions 22 of the semiconductor elements 21a and 21b attached to the mounting flat surfaces 13a and 13b is improved. Can be improved. Of course, it is not necessary to change the installation position of the cooling fan. Further, since the lower end portion of the heat radiating base 10 is exposed, this vicinity is also cooled by the air passing through the notch 12, and the heat radiating property of the heat radiating base 10 is improved.

図3は、本発明の第2の実施例に係る電源装置の放熱構造の説明図である。図3において、15はスペーサであり、その他の符号は図1の符号と同じものを示す。   FIG. 3 is an explanatory diagram of the heat dissipation structure of the power supply device according to the second embodiment of the present invention. In FIG. 3, 15 is a spacer, and other reference numerals are the same as those in FIG.

図3に示すように、本発明の第2の実施例に係る電源装置の放熱構造は、図1に示した切欠部12によって間隙を設けた構造に代えてスペーサ15によって間隙を設けたものである。つまり、放熱基体10と基板20との間にスペーサ15を介在させ、放熱基体10を基板20の表面から浮かした状態にしている。なお、スペーサ15は、支持部11と同様に、実装用平坦面13aの半導体素子を貼り付けない部位に設けられる。その他の部分の構成は、図1に示したものとおなじである。また、スペーサ15の材質としては、絶縁性を確保できる点で樹脂が好ましいが、ゴム、セラミックなど他の材質を利用することも可能である。また、基板20と、スペーサ15及び放熱基体10の固定手段は、ビスが好ましいが、接着剤で固定することもできる。   As shown in FIG. 3, the heat dissipation structure of the power supply device according to the second embodiment of the present invention is a structure in which a gap is provided by a spacer 15 instead of the structure in which a gap is provided by the notch 12 shown in FIG. is there. That is, the spacer 15 is interposed between the heat dissipation base 10 and the substrate 20 so that the heat dissipation base 10 floats from the surface of the substrate 20. In addition, the spacer 15 is provided in the site | part which does not affix the semiconductor element of the mounting flat surface 13a similarly to the support part 11. FIG. The structure of other parts is the same as that shown in FIG. The spacer 15 is preferably made of resin in terms of ensuring insulation, but other materials such as rubber and ceramic can also be used. The fixing means for the substrate 20, the spacer 15 and the heat dissipation base 10 is preferably a screw, but can be fixed with an adhesive.

以上の放熱構造によれば、図1に示した放熱構造と同様の作用を得ることができる。また、スペーサ15という新たな部品が必要になるが、放熱基体10に切欠部12を形成する必要がないので、放熱基体10の加工に必要なコストを低減することができる。   According to the above heat dissipation structure, the same effect as that of the heat dissipation structure shown in FIG. 1 can be obtained. Further, although a new part called the spacer 15 is required, since it is not necessary to form the notch 12 in the heat dissipation base 10, the cost required for processing the heat dissipation base 10 can be reduced.

なお、図1の切欠部12と、図3のスペーサ15を組み合わせて放熱基体10と基板20との間隙を設けるようにしても構わない。この構造の場合、例えば放熱基体10と基板20との絶縁性を確保するためのブッシングをスペーサ15として利用することができるので、間隙を確保するのが容易になる。また、以上の各実施例においては、整流用ダイオード、またはMOSFETなどの半導体素子に対する放熱構造として説明したが、放熱の対象が、抵抗、トランスなど他のデバイスである場合においても適用可能である。また、放熱基体については、その下部が板状の形態を持つものとして説明したが、基板との間に間隙を形成できるのであれば、下部の形態をL字状、ヨ字状など他の形態としても良い。また、半導体素子が片面のみに貼り付けられている場合にも、この構造が作用効果を奏することは言うまでもない。   1 may be combined with the spacer 15 of FIG. 3 to provide a gap between the heat dissipation base 10 and the substrate 20. In the case of this structure, for example, a bushing for ensuring insulation between the heat dissipation base 10 and the substrate 20 can be used as the spacer 15, so that it is easy to secure a gap. In each of the above embodiments, the heat dissipation structure for the semiconductor element such as a rectifying diode or MOSFET has been described. However, the present invention can be applied to the case where the heat dissipation target is another device such as a resistor or a transformer. In addition, the heat radiating base has been described as having a plate-like lower portion. However, if a gap can be formed between the substrate and the substrate, the lower portion may have other shapes such as an L shape or a yo-shape. It is also good. Needless to say, this structure also has an effect even when the semiconductor element is attached to only one surface.

本発明の第1の実施例に係る電源装置の放熱構造の説明図である。It is explanatory drawing of the thermal radiation structure of the power supply device which concerns on the 1st Example of this invention. 切欠部とビーズコアとの高さの関係を示す断面図である。It is sectional drawing which shows the relationship of the height of a notch part and a bead core. 本発明の第2の実施例に係る電源装置の放熱構造の説明図である。It is explanatory drawing of the thermal radiation structure of the power supply device which concerns on 2nd Example of this invention. 本発明の放熱構造と従来技術の放熱構造との冷却効果に関する比較実験結果を示す表であるIt is a table | surface which shows the comparative experiment result regarding the cooling effect of the thermal radiation structure of this invention, and the thermal radiation structure of a prior art.

符号の説明Explanation of symbols

10:放熱基体
11:支持部
12:切欠部
13a:実装用平坦面
13b:実装用平坦面
14:放熱フィン
15:スペーサ
20:基板
21a:半導体素子
21b:半導体素子
22:リード部
23:ビーズコア
DESCRIPTION OF SYMBOLS 10: Radiation base 11: Support part 12: Notch part 13a: Mounting flat surface 13b: Mounting flat surface 14: Radiation fin 15: Spacer 20: Substrate 21a: Semiconductor element 21b: Semiconductor element 22: Lead part 23: Bead core

Claims (2)

基板から立ち上がるように設けられた放熱基体を備えた電源装置の放熱構造において、
リード部にビーズコアを取り付けた半導体素子を設け、
前記放熱基体は、その基端側に前記半導体素子を貼り付け、この部位に前記基板との間に間隙を確保するための切欠部を形成してあり、
前記切欠部の前記基板表面からの高さを、前記半導体素子のリード部に取り付けたビーズコアの上端の高さとほぼ等しくしてあることを特徴とする電源装置の放熱構造。
In the heat dissipation structure of the power supply device provided with the heat dissipation base provided to stand up from the substrate,
Provide a semiconductor element with a bead core attached to the lead,
The heat dissipation base has the semiconductor element attached to the base end side, and a notch for securing a gap between the substrate and the substrate is formed at this part .
A heat dissipation structure for a power supply device , wherein a height of the notch from the substrate surface is substantially equal to a height of an upper end of a bead core attached to a lead portion of the semiconductor element .
基板から立ち上がるように設けられた放熱基体を備えた電源装置の放熱構造において、
リード部にビーズコアを取り付けた半導体素子を設け、
前記放熱基体と前記基板との間に介在して設けられたスペーサを備え、
前記放熱基体は、その基端側の縁辺が前記スペーサによって前記基板から離隔してあり、
前記スペーサの上端の前記基板表面からの高さを、前記半導体素子のリード部に取り付けたビーズコアの上端の高さとほぼ等しくしてあることを特徴とする電源装置の放熱構造。
In the heat dissipation structure of the power supply device provided with the heat dissipation base provided to stand up from the substrate,
Provide a semiconductor element with a bead core attached to the lead,
A spacer provided between the heat dissipation base and the substrate;
The base of the heat dissipating base is separated from the substrate by the spacer ,
A heat dissipation structure for a power supply device , wherein a height of an upper end of the spacer from the substrate surface is substantially equal to a height of an upper end of a bead core attached to a lead portion of the semiconductor element .
JP2003319581A 2003-09-11 2003-09-11 Power supply heat dissipation structure Expired - Lifetime JP4454270B2 (en)

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JP2007214195A (en) * 2006-02-07 2007-08-23 Fuji Electric Systems Co Ltd Heat sink
JP2010109236A (en) * 2008-10-31 2010-05-13 Shindengen Electric Mfg Co Ltd Bead core heat dissipation structure
TWI417998B (en) * 2011-01-24 2013-12-01 A semiconductor package having a cooling fan, and a semiconductor package for stacking other electrical devices
WO2013061404A1 (en) * 2011-10-25 2013-05-02 三菱電機株式会社 Rotary electric machine
CN105376996B (en) * 2015-11-17 2017-09-19 重庆盛镁镁业有限公司 Self tapping clamps aluminum alloy heat sink
CN105376995B (en) * 2015-11-17 2017-09-19 重庆盛镁镁业有限公司 The clipping fin of spiral expanded
CN105376999B (en) * 2015-11-20 2017-10-13 重庆盛镁镁业有限公司 Auxetic type clamped-in style aluminum alloy heat sink
JP6741255B2 (en) * 2018-01-24 2020-08-19 Necプラットフォームズ株式会社 Heat dissipation structure
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