JP4452846B2 - Metal-ceramic bonding substrate and manufacturing method thereof - Google Patents
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本発明は、特にパワーモジュールなどに使用される、チップ等の実装に好適な回路基板材料および回路基板材料の製造方法に関するものである。さらには、画像認識装置を用いてチップ等を実装する上で、位置の基準（原点）となるマーカー及びその作製に関するものである。 The present invention relates to a circuit board material suitable for mounting a chip or the like, particularly used in a power module or the like, and a method for manufacturing the circuit board material. Furthermore, the present invention relates to a marker that serves as a reference (origin) of position when a chip or the like is mounted using an image recognition apparatus, and the production thereof.
近年ロボットやモーター等の産業機器の高性能化に伴い、大電力・高能率部品などの実装のため、パワーデバイス搭載用回路基板及びそれを用いたパワーモジュールの開発改良が盛んに行われてきている。このような回路基板材料としては、電気的絶縁性に優れたセラミックス板等、絶縁体の一方の主面に回路形成用の金属層を、また他方の主面にヒートシンク（放熱用）用の金属層を形成した金属−絶縁体複合部材が用いられている。また、この種の回路基板材料に対する回路パターン、チップ部品搭載においては、回路パターンの一部に画像認識装置の位置決めの基準となる位置決めマーカー、即ち金属回路板の一部に円形の穴等を設け、予め記憶された回路形状などのデータと照合して、それらをもとにチップ部品の搭載を正確な位置に自動的に行っている。 In recent years, with the improvement in performance of industrial equipment such as robots and motors, development and improvement of circuit boards for mounting power devices and power modules using them have been actively carried out for mounting high-power and high-efficiency parts. Yes. Such circuit board materials include a metal plate for circuit formation on one main surface of an insulator, such as a ceramic plate excellent in electrical insulation, and a metal for heat sink (for heat dissipation) on the other main surface. A metal-insulator composite member in which a layer is formed is used. In addition, when mounting circuit patterns and chip parts on this type of circuit board material, a part of the circuit pattern is provided with a positioning marker that serves as a positioning reference for the image recognition device, that is, a circular hole or the like in a part of the metal circuit board. In comparison with data such as circuit shape stored in advance, chip components are automatically mounted at an accurate position based on the data.
近年より電車向け用途等で大電力を扱うために金属層を厚くしたり、また自動車搭載用途等で回路基板の信頼性の向上や軽量化のために銅系からアルミニウム系の材料に変更するために、Ｃｕと比べると劣る電気特性や放熱特性を向上させるためアルミニウム系材料の金属層を厚くした回路基板が増えてきている。
一方、同時にパワーモジュール等の小型化が要請され、回路基板も小型化の要請が強い。
To increase the thickness of metal layers to handle high power in train applications, etc. in recent years, and to change from copper-based materials to aluminum-based materials to improve circuit board reliability and reduce weight in automotive applications. In addition, in order to improve electrical characteristics and heat dissipation characteristics that are inferior to those of Cu, there are an increasing number of circuit boards in which the metal layer of an aluminum-based material is thickened.
On the other hand, miniaturization of power modules and the like is demanded at the same time, and there is a strong demand for miniaturization of circuit boards.
回路基板にチップ等を搭載する上で、例えば、従来はエッチングによって、回路側金属板に絶縁基板（セラミックス基板）まで貫通した円形やスリット形状の穴を開け、金属板とセラミックス板との光の反射の差を画像処理装置により２値化して凹状部を認識して、チップ等を搭載する上で、位置決めの基準（位置決めマーカー）としていた。
この穴やスリットは、エッチングにより作成しているが、前述のように金属層が厚くなると、比較的大きな穴を開ける必要があった。すなわちエッチングで作製した穴の場合、金属表面の開口部の直径または幅と、底部の直径または幅の差がおおきいため（エッチングファクターという）、その分を回路パターンの設計に盛り込む必要があるため、回路基板の小型化が困難であった。さらには、穴やスリットを小さくしようとすると、前記エッチングファクターによりセラミックスに到達させることが困難であった。
一方、エッチングにより貫通させない穴をあけることも可能であるが、エッチングで作製した穴の場合、エッチングファクターにより、穴の側面からの反射があり前記画像処理を行っても、穴が位置決めマーカーとして判別できない場合があった。
When mounting a chip or the like on a circuit board, for example, by etching, a circular or slit-shaped hole penetrating to an insulating substrate (ceramic substrate) is made in a circuit side metal plate, and light of the metal plate and the ceramic plate is transmitted. The difference in reflection is binarized by an image processing apparatus to recognize the concave portion and mount a chip or the like as a positioning reference (positioning marker).
These holes and slits are created by etching. However, when the metal layer is thick as described above, it is necessary to make relatively large holes. In other words, in the case of a hole made by etching, the difference between the diameter or width of the opening on the metal surface and the diameter or width of the bottom is large (called an etching factor), so it is necessary to incorporate that amount into the design of the circuit pattern. It was difficult to reduce the size of the circuit board. Furthermore, when trying to make the holes and slits small, it is difficult to reach the ceramics due to the etching factor.
On the other hand, it is possible to make a hole that does not penetrate by etching, but in the case of a hole made by etching, there is reflection from the side of the hole due to the etching factor, and even if the image processing is performed, the hole is identified as a positioning marker. There were cases where it was not possible.
穴をあける別の方法として、ミリングする機械的な方法があるが金属−セラミックス回路基板の場合は行われていない。なぜなら、金属層にミリング加工しセラミックス基板まで貫通穴をあけると、必ずセラミックスが割れ、回路基板として使用できないという問題がある。 As another method of drilling holes, there is a mechanical method of milling, but this is not done for metal-ceramic circuit boards. This is because if a metal layer is milled and a through-hole is drilled to a ceramic substrate, the ceramic is always cracked and cannot be used as a circuit board.
発明者は前記課題を解決するために鋭意研究を行い、以下の発明を完成させた。
すなわち、金属層に所定寸法の貫通しない凹状部を設けることによる。貫通しないの凹状部はミリングにより形成することが好ましく、一定の厚さの金属層を残すことてセラミックス基板が割れることを防止する。また、貫通しないの凹状部は光学的な画像認識において、金属層の表面と金属層である凹状部の底部との差を判別する必要があり、従来の金属層表面とセラミックス基板の差を判別するのに比べ困難である。しかしながら、凹状部を所定の寸法に制御することでこれも解決することができた。
The inventor has intensively studied to solve the above problems and completed the following invention.
That is, by providing the metal layer with a concave portion having a predetermined dimension that does not penetrate. The concave portion not penetrating is preferably formed by milling, and the ceramic substrate is prevented from cracking by leaving a metal layer having a certain thickness. Also, the concave part that does not penetrate needs to distinguish the difference between the surface of the metal layer and the bottom of the concave part that is the metal layer in optical image recognition, and the difference between the conventional metal layer surface and the ceramic substrate is distinguished. It is difficult to do. However, this can also be solved by controlling the concave portion to a predetermined size.
すなわち請求項１の発明は、セラミックス基板の一方の面に厚さｔが０．４ｍｍ以上の金属層を接合し、回路パターンを形成した後、該金属層表面にセラミックス基板まで貫通しない金属表面開口部の形状が円形またはスリット形状の凹状部であって、該凹状部の深さｄが０．２５ｍｍ以上、該凹状部の金属層表面開口部の直径または幅ａが０．７ｍｍ以下、該凹状部の金属層表面開口部の直径または幅ａと底部の直径または幅ｂの差が０．１５ｍｍ以下であり、且つ該凹状部底部の金属層の厚さｃが０．０５ｍｍ以上である該凹状部をミリング加工により作製することを特徴とする、金属−セラミックス接合基板の製造方法である。 That is, according to the first aspect of the present invention, after a metal layer having a thickness t of 0.4 mm or more is bonded to one surface of a ceramic substrate and a circuit pattern is formed, a metal surface opening that does not penetrate to the ceramic substrate on the surface of the metal layer. The shape of the part is a circular or slit-shaped concave part, and the depth d of the concave part is 0.25 mm or more, and the diameter or width a of the metal layer surface opening of the concave part is 0.7 mm or less. The concave shape in which the difference between the diameter or width a of the metal layer surface opening of the part and the diameter or width b of the bottom part is 0.15 mm or less, and the thickness c of the metal layer at the bottom of the concave part is 0.05 mm or more This is a method for producing a metal / ceramic bonding substrate , wherein the part is produced by milling .
請求項２の発明は、接合された前記金属層の表面に回路パターン状のエッチングレジストを形成し、エッチングで回路パターン以外の前記金属層を除去し、エッチングレジストを除去して、前記回路パターンを形成することを特徴とする、請求項１に記載の金属−セラミックス接合基板の製造方法である。
According to a second aspect of the present invention, an etching resist having a circuit pattern shape is formed on the surface of the bonded metal layer, the metal layer other than the circuit pattern is removed by etching, the etching resist is removed, and the circuit pattern is formed. It forms, It is a manufacturing method of the metal-ceramic bonding board | substrate of
請求項３の発明は、前記凹状部が画像認識処理の位置決めマーカーとして利用される、請求項１または２のいずれかに記載の金属−セラミックス接合基板の製造方法である。
The invention of
請求項４の発明は、前記凹状部の深さｄが０．２５ｍｍ以上であることを特徴とする、請求項１〜３に記載の金属−セラミックス接合基板である。
The invention according to
請求項５の発明は、前記凹状部の金属層表面開口部の直径または幅ａが１．１ｍｍ以下であることを特徴とする、請求項１〜４に記載の金属−セラミックス接合基板である。 A fifth aspect of the present invention is the metal / ceramic bonding substrate according to any one of the first to fourth aspects, wherein a diameter or width a of the metal layer surface opening of the concave portion is 1.1 mm or less.
請求項６の発明は、前記凹状部の金属層表面開口部の直径または幅ａが０．７ｍｍ以下であることを特徴とする、請求項１〜５に記載の金属−セラミックス接合基板である。 A sixth aspect of the present invention is the metal / ceramic bonding substrate according to any one of the first to fifth aspects, wherein the diameter or width a of the metal layer surface opening of the concave portion is 0.7 mm or less.
請求項７の発明は、前記凹状部底部の金属層の厚さｃが０．１ｍｍ以上であることを特徴とする、請求項１〜６に記載の金属−セラミックス接合基板である。
The invention according to claim 7 is the metal / ceramic bonding substrate according to any one of
請求項８の発明は、前記凹状部の金属層表面開口部の直径または幅ａと底部の幅または直径ｂの差が０．１５ｍｍ以下であることを特徴とする、請求項１〜７に記載の金属−セラミックス接合基板である。 The invention according to claim 8 is characterized in that the difference between the diameter or width a of the metal layer surface opening of the concave portion and the width or diameter b of the bottom is 0.15 mm or less. This is a metal-ceramic bonding substrate.
請求項９の発明は、前記凹状部の金属層表面開口部の形状が、円形またはスリット形状であることを特徴とする、請求項１〜８に記載の金属−セラミックス接合基板である。
The invention according to claim 9 is the metal / ceramic bonding substrate according to any one of
請求項１０の発明は、前記凹状部を、画像認識処理の位置決めマーカーとして利用するを特徴とする、請求項１〜９に記載の金属−セラミックス接合回路基板である。 A tenth aspect of the present invention is the metal / ceramic bonding circuit board according to the first to ninth aspects, wherein the concave portion is used as a positioning marker for image recognition processing.
請求項１１の発明は、請求項１〜１０に記載の凹状部を、ミリング加工により作製することを特徴とする、金属−セラミックス接合回路基板の製造方法である。 An eleventh aspect of the present invention is a method for manufacturing a metal / ceramic bonding circuit board, wherein the concave portion according to the first to tenth aspects is produced by milling.
金属−セラミックス接合基板の金属層に、比較的小さい所定サイズの貫通しない凹状部を形成することにより、画像処理装置がそれを認識しチップ等の搭載の基準とすることができるとともに、金属−セラミックス接合基板を小型化することができる。また、凹状部に所定の厚さの金属層を残すことにより、ミリング加工を行う場合にもセラミックスの割れを防止することができる。さらには、金属層の厚さが比較的大きくなってもミリング加工により、前記所定のサイズの貫通しない凹状部を作製することができる。 By forming a concave portion having a relatively small predetermined size in the metal layer of the metal-ceramic bonding substrate, the image processing apparatus can recognize it and use it as a reference for mounting a chip or the like. The bonding substrate can be reduced in size. Further, by leaving a metal layer having a predetermined thickness in the concave portion, it is possible to prevent cracking of ceramics even when milling is performed. Furthermore, even if the thickness of the metal layer is relatively large, the concave portion having no predetermined size can be produced by milling.
本発明は、金属−セラミックス接合基板において、金属層の表面に貫通しない凹状部を有しており、該金属層の厚さｔが０．２ｍｍ以上であり、該凹状部の深さｄが０．１５ｍｍ以上、該凹状部の金属層表面開口部の直径または幅ａが１．５ｍｍ以下、該凹状部の金属層表面開口部の直径または幅ａと底部の直径または幅ｂの差が０．２０ｍｍ以下であり、且つ該凹状部底部の金属層の厚さｃが０．０５ｍｍ以上であることを特徴とする。 The present invention has a metal-ceramic bonding substrate having a concave portion that does not penetrate the surface of the metal layer, the thickness t of the metal layer is 0.2 mm or more, and the depth d of the concave portion is 0. 15 mm or more, the diameter or width a of the metal layer surface opening of the concave portion is 1.5 mm or less, and the difference between the diameter or width a of the metal layer surface opening of the concave portion and the diameter or width b of the bottom portion is 0. It is 20 mm or less, and the thickness c of the metal layer at the bottom of the concave portion is 0.05 mm or more.
該凹状部において、深さｄが０．１５ｍｍ以上であり、直径または幅ａが１．５ｍｍ以下、金属層表面の開口部の直径または幅ａと底部の直径または幅ｂの差が０．２０ｍｍ以下であることが必要である。
これらのいずれか一つが範囲外であると、画像認識装置用の位置決めマーカー（基準）として、光学的に金属層の表面と凹状部を区別して認識することが困難となるからである。凹状部の形状は、画像認識装置が認識できる程度にその直径または幅が小さく、且つ深い方が良い。よって、該凹状部の金属層表面開口部の直径または幅ａが１．５ｍｍ以下、好ましくは１．１ｍｍ以下、さらに好ましくは０．７ｍｍ以下、さらに好ましくは０．５ｍｍ以下であり、また、凹状部の深さｄは０．１５ｍｍ以上、好ましくは０．２５ｍｍ以上である。
In the concave portion, the depth d is 0.15 mm or more, the diameter or width a is 1.5 mm or less, and the difference between the diameter or width a of the opening on the surface of the metal layer and the diameter or width b of the bottom is 0.20 mm. It is necessary that:
If any one of these is out of the range, it becomes difficult to optically distinguish and recognize the surface of the metal layer and the concave portion as a positioning marker (reference) for the image recognition apparatus. As for the shape of the concave portion, the diameter or the width should be small and deep enough to be recognized by the image recognition apparatus. Therefore, the diameter or width a of the metal layer surface opening of the concave portion is 1.5 mm or less, preferably 1.1 mm or less, more preferably 0.7 mm or less, and even more preferably 0.5 mm or less. The depth d of the part is 0.15 mm or more, preferably 0.25 mm or more.
該凹状部の、金属層表面の開口部の直径または幅ａと、底部の直径または幅ｂの差が大きいと、該凹状部の側面からも光が反射することで、金属層表面と該凹状部からの光の反射の区別がつきにくくなり、マーカーとして認識が難しくなる場合がある。したがって、該凹状部の金属層開口部の直径または幅ａと底部の直径または幅ｂの差が０．２０ｍｍ以下であり、さらに好ましくは０．１５ｍｍ以下であり、さらに好ましくは０．１０ｍｍ以下である。 If the difference between the diameter or width a of the opening on the surface of the metal layer and the diameter or width b of the bottom of the concave portion is large, light is also reflected from the side surface of the concave portion. In some cases, it becomes difficult to distinguish the reflection of light from the part, and it is difficult to recognize as a marker. Accordingly, the difference between the diameter or width a of the metal layer opening of the concave portion and the diameter or width b of the bottom is 0.20 mm or less, more preferably 0.15 mm or less, and further preferably 0.10 mm or less. is there.
凹状部はミリング加工によって形成することが好ましい。しかしながら、ミリング加工のような機械的加工を行うことはセラミックスの割れを発生させるおそれがあるため、信頼性を必要とする金属−セラミックス接合基板に従来は実施されることはなかった。本発明においては、一定以上の厚さを残すことでセラミックスの割れ発生を防止できることを見出した。すなわち、該凹状部底部の金属層の厚さｃを０．０５ｍｍ以上、好ましくは０．１以上とすることである。 The concave part is preferably formed by milling. However, since mechanical processing such as milling may cause cracking of ceramics, it has not been conventionally applied to metal-ceramic bonding substrates that require reliability. In the present invention, it was found that the occurrence of cracks in ceramics can be prevented by leaving a certain thickness or more. That is, the thickness c of the metal layer at the bottom of the concave portion is 0.05 mm or more, preferably 0.1 or more.
ミリング加工において、セラミックス基板が露出するまで加工すると、エンドミルとセラミックスが接触し割れが発生する。接触しないように、セラミックスの表面から金属層の厚さが０．０５ｍｍより小さくなるように、ミリング加工機で加工してもセラミックスは割れてしまう。これは、主にセラミックス基板には反りやうねりがあること及びミリング加工時の振動等の影響によると考えている。しかしながら、金属層をセラミックス基板表面から０．０５ｍｍ以上、好ましくは０．１ｍｍ以上残すようにミリング加工機で加工すると、セラミックスの割れの発生は抑制される。よって、前記凹状部の金属層の厚さｃを０．０５ｍｍ以上、好ましくは０．１ｍｍ以上とすることが必要である。この加工のために、３次元の位置制御機能を有するミリング加工装置を使用することが好ましい。
なお、金属層表面開口部の凹状部の形状は、円形やスリット形状が上記ミリング加工をする上で好ましい。スリット形状とは四角形で比較的細長いもの或いはそれに近い形状をいうが、本発明の場合正方形やそれに近い形状のものも含むものとする。
In the milling process, if the ceramic substrate is processed until it is exposed, the end mill and the ceramic come into contact with each other and cracks occur. Even if it processes with a milling machine so that the thickness of a metal layer may become smaller than 0.05 mm from the surface of ceramics so that it may not contact, ceramics will be broken. This is considered to be mainly due to the fact that the ceramic substrate has warping and waviness and the influence of vibration during milling. However, if the metal layer is processed by a milling machine so as to leave 0.05 mm or more, preferably 0.1 mm or more from the surface of the ceramic substrate, the occurrence of ceramic cracking is suppressed. Therefore, it is necessary that the thickness c of the concave metal layer is 0.05 mm or more, preferably 0.1 mm or more. For this processing, it is preferable to use a milling apparatus having a three-dimensional position control function.
In addition, as for the shape of the recessed part of the metal layer surface opening part, circular or slit shape is preferable when performing the said milling process. The slit shape refers to a square shape that is relatively elongated or close to it, but in the case of the present invention, includes a square shape or a shape close thereto.
従来このような円形やスリット形状の凹状部の加工は、金属−セラミックス接合基板の場合、金属層表面に所定形状の大きさのエッチングマスクを形成し、エッチング液によりエッチング加工することがなされていた。しかしながら、本発明のような直径又は幅が小さく深いサイズの凹状部の形状はエッチング加工では非常に困難である。さらには、エッチング加工の特徴として凹状部の側面部は傾斜がつき、すなわち金属層表面の開口部と底部の直径または幅に大きな差が発生するため、前記寸法形状の貫通しない凹状部を形成することができなかった。 Conventionally, in the case of a metal-ceramic bonding substrate, such a circular or slit-shaped concave portion has been processed by forming an etching mask of a predetermined shape on the surface of the metal layer and etching with an etching solution. . However, the shape of the concave portion having a small diameter or width and a deep size as in the present invention is very difficult by etching. Further, as a feature of the etching process, the side surface portion of the concave portion is inclined, that is, a large difference occurs in the diameter or width of the opening portion and the bottom portion of the metal layer surface, so that the concave portion that does not penetrate the dimension shape is formed. I couldn't.
詳しくは、エッチング法については、例えば０．５ｍｍの厚さの金属層に直径０．５ｍｍの凹状部を形成するとエッチングファクターの関係で穴の形状がすりばち状になり、凹状部の側面からも光を反射しやすく、画像処理による金属層表面からの光の反射と凹状部からの光の反射を２値化しても区別が困難になり、さらに金属板の厚さが０．５ｍｍで０．３５ｍｍの直径の本発明の凹状部を形成することは、前記エッチングファクターを考えるとエッチングマスクの凹状部に対応する開口部分をを小さくする必要があり、本発明の深さを実現することはできない。即ち、深くエッチングをすると開口部が大きくなり、開口部を０．３５ｍｍをねらってエッチングすると、凹状部の深さ及び開口部と底部の直径の差を本発明の範囲に入れることはできないからである。
しかしながら、エッチングマスクを極端に小さくすることやエッチング液その他条件の変更などで、本発明の凹状部のサイズの範囲内に入れば、エッチング法で作製した本発明の金属−セラミックス基板を否定するものではない。
Specifically, for the etching method, for example, when a concave portion having a diameter of 0.5 mm is formed on a metal layer having a thickness of 0.5 mm, the shape of the hole becomes a slip shape due to the etching factor, and light is also emitted from the side surface of the concave portion. Is difficult to distinguish even if the reflection of light from the surface of the metal layer and the reflection of light from the concave portion by image processing are binarized, and the thickness of the metal plate is 0.55 mm at 0.5 mm. In order to form the concave portion of the present invention having a diameter of 5 mm, it is necessary to reduce the opening corresponding to the concave portion of the etching mask in view of the etching factor, and the depth of the present invention cannot be realized. That is, if the etching is performed deeply, the opening becomes larger, and if the opening is etched aiming at 0.35 mm, the depth of the concave portion and the difference between the diameter of the opening and the bottom cannot be included in the scope of the present invention. is there.
However, if the etching mask is made extremely small, or the etching solution and other conditions are changed, the metal-ceramic substrate of the present invention produced by the etching method is denied if it falls within the size range of the concave portion of the present invention. is not.
一方、近年大電力化や銅系材料からアルミニウム系材料に金属層が変わること等で、金属層の厚さの比較的大きなものが求められている。よって、金属層の厚さが０．３ｍｍ以上、好ましくは０．４ｍｍ以上のときに、本発明は特に有効になる。すなわち、該凹状部が小さく深く、また、その側面が金属層表面に対して９０°に近いもの（金属表面開口部の直径または幅ａと底部の直径または幅ｂとの差が０．２０ｍｍ以下）を作製するためにミリング加工を行い、該凹状部を形成するのである。
また、金属層の厚さが薄い側（下限）は０．２ｍｍであり、これより小さいと前記サイズの凹状部の形成ができない。
On the other hand, in recent years, there has been a demand for a metal layer having a relatively large thickness due to the increase in power and the change of a metal layer from a copper-based material to an aluminum-based material. Therefore, the present invention is particularly effective when the thickness of the metal layer is 0.3 mm or more, preferably 0.4 mm or more. That is, the concave portion is small and deep, and its side surface is close to 90 ° with respect to the metal layer surface (the difference between the diameter or width a of the metal surface opening and the diameter or width b of the bottom portion is 0.20 mm or less. ) To produce the concave portion.
Moreover, the side (lower limit) where the thickness of the metal layer is thin is 0.2 mm, and if it is smaller than this, the concave portion of the size cannot be formed.
また、金属層として電気伝導性および熱伝導性から銅やアルミニウムさらにはそれらの合金が主として使用されることが好ましい。また、セラミックスとしては窒化アルミニウム、アルミナ、窒化珪素、炭化珪素などがそれぞれの特徴に合わせて、回路基板が設計され使用されるのが好ましい。 Moreover, it is preferable that copper, aluminum, and those alloys are mainly used as a metal layer from electrical conductivity and heat conductivity. As the ceramic, it is preferable that a circuit board is designed and used according to the characteristics of aluminum nitride, alumina, silicon nitride, silicon carbide or the like.
本発明の金属−セラミックス接合基板は、例えば以下の方法によって製造することができる。セラミックス基板の両面に金属板を直接接合、ろう材接合法、溶湯接合法等によって形成する。この金属板の一方の面の上に回路パターン状のエッチングレジストを、もう一方の面には放熱板を形成するためのベタ形状のエッチングレジストをスクリーン印刷等の方法により形成する。その後エッチングで回路パターン以外の金属層を除去し、エッチングレジストを除去して回路を作製する。
その後、金属板の所定の位置に、ミリング加工機によりセラミックス基板まで貫通しない凹状部（円形、スリット形状の穴）を形成するのである。
なお、金属−セラミックス接合基板の意味とは、金属層が少なくともセラミックスの一方の面に接合されており、該金属層に半導体チップ等の電子部品が搭載され回路が形成されることが特徴であって、それ以外は特に制限はない。即ち、もう一方の面の放熱部がセラミックスより大きいいわゆるベース板であってもよいし、また平板状でなく放熱フィン形状などでもかまわない。
The metal / ceramic bonding substrate of the present invention can be produced, for example, by the following method. Metal plates are formed on both sides of the ceramic substrate by direct bonding, brazing material bonding method, molten metal bonding method or the like. A circuit pattern etching resist is formed on one surface of the metal plate, and a solid etching resist for forming a heat radiating plate is formed on the other surface by a method such as screen printing. Thereafter, the metal layer other than the circuit pattern is removed by etching, and the etching resist is removed to produce a circuit.
Thereafter, a concave portion (circular, slit-shaped hole) that does not penetrate to the ceramic substrate is formed at a predetermined position of the metal plate by a milling machine.
The meaning of the metal-ceramic bonding substrate is characterized in that a metal layer is bonded to at least one surface of the ceramic, and an electronic component such as a semiconductor chip is mounted on the metal layer to form a circuit. Other than that, there are no particular restrictions. That is, the so-called base plate larger than the ceramic may be used for the heat radiating portion on the other surface, or it may be a heat radiating fin shape instead of a flat plate shape.
図１は本発明の凹状部を形成した金属−セラミックス基板の上面図であり、図２はＡ−Ａ断面図、図３は凹状部の拡大図である。
図３のａは凹状部の金属層開口部の直径または幅を示しており、ｂは該凹状部の底部の直径または幅を示している。また、ｄは該凹状部の深さ、ｃは該凹状部底部の金属層の厚さ、ｔは金属層の厚さを示す。なお、ｔは凹状部を形成する側の金属層の厚さとする。
FIG. 1 is a top view of a metal-ceramic substrate having a concave portion according to the present invention, FIG. 2 is a cross-sectional view taken along line AA, and FIG. 3 is an enlarged view of the concave portion.
3a shows the diameter or width of the metal layer opening of the concave portion, and b shows the diameter or width of the bottom portion of the concave portion. D is the depth of the concave portion, c is the thickness of the metal layer at the bottom of the concave portion, and t is the thickness of the metal layer. Note that t is the thickness of the metal layer on the side where the concave portion is formed.
［実施例１］
サイズが２６ｍｍ×５１ｍｍ×０．６３５ｍｍの窒化アルミニウム基板の両面に、溶湯接合法でそれぞれ０．６ｍｍの厚さのアルミニウム層を接合した。その後、回路パターン形状及び放熱パターン形状のエッチングマスクをアルミニウム層表面上に印刷し、エッチングにより回路を形成し、その後、エッチングマスクを除去し接合基板を作製した。
次に３次元の位置制御のできるミリング装置により、回路基板中の所定の場所に直径０．６ｍｍで深さ０．４ｍｍの貫通しない円形の凹状部を狙い作製した。これを画像認識させたところ、充分マーカーとして使用できることがわかった。また、このときセラミックスに割れの発生はなかった。
さらに、凹状部の形状を調査するために、凹状部の部分について、接合基板切断、断面研磨を行い、形状を光学顕微鏡で実測した。
このとき、アルミニウム層表面開口部の直径ａは０．７０ｍｍで、底部の直径ｂは０．５７ｍｍであり、その差（ａ−ｂ）は０．１３ｍｍであった。
[Example 1]
Aluminum layers each having a thickness of 0.6 mm were bonded to both surfaces of an aluminum nitride substrate having a size of 26 mm × 51 mm × 0.635 mm by a molten metal bonding method. Thereafter, an etching mask having a circuit pattern shape and a heat radiation pattern shape was printed on the surface of the aluminum layer, a circuit was formed by etching, and then the etching mask was removed to produce a bonded substrate.
Next, with a milling apparatus capable of three-dimensional position control, a circular concave portion having a diameter of 0.6 mm and a depth of 0.4 mm was formed at a predetermined location in the circuit board. When this was image-recognized, it was found that it could be used as a sufficient marker. At this time, no cracks occurred in the ceramics.
Further, in order to investigate the shape of the concave portion, the portion of the concave portion was subjected to cutting the bonded substrate and polishing the cross section, and the shape was measured with an optical microscope.
At this time, the diameter a of the aluminum layer surface opening was 0.70 mm, the diameter b of the bottom was 0.57 mm, and the difference (ab) was 0.13 mm.
［実施例２］
直径が０．４ｍｍで深さ０．４ｍｍの貫通しない円形の凹状部を狙った以外は実施例１記載の金属−セラミックス回路基板と同じサンプルを作製した。これを画像認識させたところ、充分マーカーとして使用することができた。また、このときセラミックスに割れの発生はなかった。
実施例１と同様に凹状部の断面形状を調査したところ、アルミニウム層表面開口部の直径ａは０．５２ｍｍで、底部の直径ｂは０．３７ｍｍであり、その差（ａ−ｂ）は０．１５ｍｍであった。
[Example 2]
The same sample as the metal-ceramic circuit board described in Example 1 was prepared except that a circular concave portion having a diameter of 0.4 mm and a depth of 0.4 mm that did not penetrate was aimed. When this was image-recognized, it could be used as a sufficient marker. At this time, no cracks occurred in the ceramics.
When the cross-sectional shape of the concave portion was examined in the same manner as in Example 1, the diameter a of the aluminum layer surface opening was 0.52 mm, the bottom diameter b was 0.37 mm, and the difference (ab) was 0. .15 mm.
［比較例１］
実施例１と同様の方法で、凹状部を作製する前の接合基板を作製した。
その後、直径が０．４ｍｍで深さ０．４ｍｍの貫通しない円形の凹状部を作製するために、エッチングレジストをアルミニウム層表面にスクリーン印刷し、開口部が０．４ｍｍになるようにエッチングレジストの形状及びエッチング条件を調節した。
その結果、凹状部が深く作製できず且つテーパーを持つ為、画像認識において穴の内部からも反射が大きくマーカーとして認識できなかった。
実施例１と同様に凹状部の断面形状を調査したところ、アルミニウム層表面開口部の直径ａは０．４５ｍｍで、底部の直径ｂは凹状部の形状がすり鉢状にテーパーがついていたため、測定できなかった。また、凹状部の深さ、即ちアルミニウム層表面からすり鉢形状の頂部までは０．２ｍｍであった。
[Comparative Example 1]
In the same manner as in Example 1, a bonded substrate before producing the concave portion was produced.
Then, in order to produce a circular concave portion having a diameter of 0.4 mm and a depth of 0.4 mm, an etching resist is screen-printed on the surface of the aluminum layer, and the etching resist is made to have an opening of 0.4 mm. The shape and etching conditions were adjusted.
As a result, since the concave portion could not be formed deeply and had a taper, reflection from the inside of the hole was large and could not be recognized as a marker in image recognition.
When the cross-sectional shape of the concave portion was investigated as in Example 1, the diameter a of the aluminum layer surface opening was 0.45 mm, and the diameter b of the bottom portion was measured because the shape of the concave portion was tapered in a mortar shape. could not. The depth of the concave portion, that is, the distance from the surface of the aluminum layer to the top of the mortar shape was 0.2 mm.
１．金属−セラミックス接合基板
２．セラミックス基板
３．金属層（回路側）
４．金属層（放熱側）
５．凹状部（円形）
６．凹状部（スリット形状）
ａ：凹状部の金属層開口部の直径または幅
ｂ：凹状部の底部の直径または幅
ｃ：凹状部底部の金属層の厚さ
ｄ：凹状部の深さ
ｔ：金属層の厚さ
1. 1. Metal-
4). Metal layer (heat dissipation side)
5). Concave part (circular)
6). Concave part (slit shape)
a: Diameter or width of opening of metal layer in concave part b: Diameter or width of bottom part of concave part c: Thickness of metal layer at bottom of concave part d: Depth of concave part t: Thickness of metal layer
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| KR102121261B1 (en) * | 2014-09-01 | 2020-06-10 | 미쓰이금속광업주식회사 | Laminated body for manufacturing printed wiring board, method for manufacturing laminated body for manufacturing printed wiring board, and method for manufacturing printed wiring board |
| CN209880723U (en) * | 2019-04-26 | 2019-12-31 | 宁德时代新能源科技股份有限公司 | Battery module, secondary battery and top cover assembly thereof |
| JP7465879B2 (en) * | 2019-07-31 | 2024-04-11 | デンカ株式会社 | Ceramic substrate and manufacturing method thereof, composite substrate and manufacturing method thereof, and circuit substrate and manufacturing method thereof |
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| CN103170664B (en) * | 2011-12-23 | 2016-03-30 | 深南电路有限公司 | A kind of dark groove milling method of control and milling machine |
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