JP4452838B2 - Semiconductor detector block and positron emission tomography apparatus using the same - Google Patents
Semiconductor detector block and positron emission tomography apparatus using the same Download PDFInfo
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Description
本発明は、陽電子放出核種で標識された薬剤を体内に投与して、がんの診断、脳等の器官の診断を行うことができる陽電子断層撮影装置や薬剤の開発等のために動物を用いた実験用の陽電子断層撮影装置等に用いられる半導体検出器ブロック及びこれを用いた陽電子断層撮影装置に関する。 The present invention uses a positron emission tomography apparatus that can administer a drug labeled with a positron emitting nuclide into the body to diagnose cancer and diagnose organs such as the brain, and the development of drugs. The present invention relates to a semiconductor detector block used in an experimental positron tomography apparatus and the like, and a positron tomography apparatus using the same.
陽電子断層撮影装置は、陽電子放出核種を用い、放出された陽電子と物質中の電子が出会い消滅するときに、１８０°の角度で放出される２本の５１１ｋｅＶのガンマ線を検出してその核種の分布像を得るものである。陽電子断層撮影装置には、そのガンマ線の検出器として、従来、ＢＧＯ、ＬＳＯ、ＧＳＯなどのシンチレーターが用いられている。シンチレーター検出器は、円周上に並べられ、ガントリーを形成している。十数個のシンチレーターは、お互いが遮光壁で隔てられて束ねられ、その端部が数個の光電子増倍管に接続される。ガンマ線検出によって発光した光を数個の光電子増倍管で受けて、各々の光の強度比からどのシンチレーターでガンマ線が測定されたかを決定する。この原理に基づいた陽電子断層撮影装置の空間分解能は数ｍｍが限界となっている。 The positron emission tomography apparatus uses a positron emitting nuclide, detects two 511 keV gamma rays emitted at an angle of 180 ° when the emitted positron and an electron in the material meet and disappear, and the distribution of the nuclide. Obtain an image. Conventionally, scintillators such as BGO, LSO, and GSO are used as γ-ray detectors in positron tomography apparatuses. The scintillator detectors are arranged on the circumference to form a gantry. Dozens of scintillators are bundled while being separated from each other by a light shielding wall, and their ends are connected to several photomultiplier tubes. The light emitted by the gamma ray detection is received by several photomultiplier tubes, and the scintillator used to determine the gamma ray is determined from the intensity ratio of each light. The spatial resolution of a positron tomography apparatus based on this principle is limited to several millimeters.
従来のシンチレーターでは、ガンマ線の進行方向に対する位置分解能は、その進行方向に対するシンチレーターの大きさに強く依存し、通常２ｍｍ程度が限界である。更に、ガンマ線の進行方向の検出位置は直接に測定できないため、進行方向にシンチレーションの発生した光の強度の減衰時間が違うシンチレーターを並べて、検出したガンマ線の光の信号の減衰時間を測定して検出されたシンチレーターを決定、つまりガンマ線の位置決定する方法が一般にとられており、その位置決定の精度は、数ｍｍが限界となっている。 In the conventional scintillator, the position resolution with respect to the traveling direction of the gamma rays strongly depends on the size of the scintillator with respect to the traveling direction, and is usually about 2 mm. Furthermore, since the detection position in the traveling direction of gamma rays cannot be measured directly, scintillators with different scintillation light intensity decay times are arranged in the traveling direction and detected by measuring the decay time of the detected gamma ray light signal. In general, a method of determining the scintillator, that is, determining the position of the gamma ray is taken, and the accuracy of the position determination is limited to several mm.
Ｇｅ、Ｓｉ等の半導体を用いた半導体検出器も提案されているが、液体窒素での冷却が必要であり、またＧｅ、Ｓｉは原子番号がＣｄＴｅよりも小さいため、５１１keVガンマ線に対して吸収効果が小さいなどの欠点があり、１ｍｍ以下の高分解能を持つ陽電子断層撮影装置としては使用が困難であった。
本発明は簡単な検出器構造を有し、かつ１ｍｍ以下の空間分解能を持った半導体検出器ブロック及びこれを備えた陽電子断層撮影装置を提供することを課題とするものである。 An object of the present invention is to provide a semiconductor detector block having a simple detector structure and a spatial resolution of 1 mm or less, and a positron emission tomography apparatus including the same.
上記の課題を解決するために本発明は、次のような半導体検出器ブロック及びこれを備えた陽電子断層撮影装置を提供するものである。
（１）表面に半導体板との間でショットキー接合を構成するインジウムからなる電気伝導抵抗性電極、裏面に電気伝導性電極が形成されたＣｄＴｅ結晶からなる半導体板からなり、電気伝導抵抗性電極の４隅からの電気信号の比率を用いて半導体板内でのガンマ線の検出位置を２次元的に検出する半導体検出器を複数個重ね合わせ、３次元的にガンマ線の検出位置を求めることができるようにした半導体検出器ブロック。
（２）上記電気伝導性電極の構成材料は、白金であることを特徴とする（１）に記載の半導体検出器ブロック。
（３）隣接する半導体検出器の白金電極面同士を電気伝導性を持つペーストで貼り付けるとともにインジウム電極面同士を絶縁膜を介して複数個重ね合わせることを特徴とする（２）に記載の半導体検出器ブロック。
（４）上記電気伝導性電極からの電気信号を同時計数用の時間信号とし、ガンマ線を検出した他の半導体検出器との同時計数の判定に用いることを特徴とする（１）乃至（３）のいずれかに記載の半導体検出器ブロック。
（５）（１）乃至（４）のいずれかに記載の半導体検出器ブロックを２個以上備えた陽電子断層撮影装置。
（６）上記半導体検出器ブロックは、動径方向又は対向方向に独立して移動することができることを特徴とする（５）に記載の陽電子断層撮影装置。
In order to solve the above problems, the present invention provides the following semiconductor detector block and a positron emission tomography apparatus including the same.
(1) An electrically conductive resistive electrode composed of a CdTe crystal made of CdTe crystal having an electrically conductive electrode formed on the back surface and indium forming a Schottky junction with the semiconductor plate on the surface. A plurality of semiconductor detectors that two-dimensionally detect gamma ray detection positions in the semiconductor plate using the ratios of the electric signals from the four corners of the two can be overlapped to obtain the gamma ray detection positions three-dimensionally. Semiconductor detector block.
(2) The semiconductor detector block according to (1), wherein the constituent material of the electrically conductive electrode is platinum.
(3) The semiconductor according to (2), wherein the platinum electrode surfaces of adjacent semiconductor detectors are pasted together with an electrically conductive paste, and a plurality of indium electrode surfaces are overlapped with an insulating film interposed therebetween. Detector block.
(4) The electrical signal from the electrically conductive electrode is used as a time signal for coincidence counting and used for judgment of coincidence with other semiconductor detectors that have detected gamma rays. (1) to (3) The semiconductor detector block according to any one of the above.
(5) A positron emission tomography apparatus comprising two or more semiconductor detector blocks according to any one of (1) to (4).
(6) The positron emission tomography apparatus according to (5), wherein the semiconductor detector block can be moved independently in a radial direction or a facing direction.
本発明によれば、簡単な検出器構造を有し、かつ１ｍｍ以下の空間分解能を持った半導体検出器ブロック及びこれを備えた陽電子断層撮影装置が得られる。 According to the present invention, a semiconductor detector block having a simple detector structure and a spatial resolution of 1 mm or less and a positron emission tomography apparatus including the same can be obtained.
本発明に係るガンマ線の位置を３次元的に測定できる半導体検出器ブロックについて、図面を基に詳細に説明する。
図１は、半導体板内でのガンマ線の検出位置を２次元的に検出する半導体検出器を示すものである。
図１において、薄い半導体結晶板は、材質をＣｄＴｅ結晶又はＢｒＴｌ結晶とし、片方の面が電気伝導抵抗性電極、もう片方の面を電気伝導性電極とするものである。
A semiconductor detector block capable of measuring the position of gamma rays three-dimensionally according to the present invention will be described in detail with reference to the drawings.
FIG. 1 shows a semiconductor detector for two-dimensionally detecting a detection position of gamma rays in a semiconductor plate.
In FIG. 1, a thin semiconductor crystal plate is made of a CdTe crystal or a BrTl crystal, one surface is an electrically conductive resistive electrode, and the other surface is an electrically conductive electrode.
半導体検出器には電気伝導抵抗性電極面の４つの隅Ａ、Ｂ、Ｃ、Ｄに、それぞれ端子を設け、それぞれを増幅回路に接続する。４つの端子に発生した電圧ＶA、ＶB、ＶC、ＶDを用いて、ガンマ線の半導体板上での検出位置Ｘ、ＹをＶA、ＶB、ＶC、ＶDの関数として求める。 The semiconductor detector is provided with terminals at four corners A, B, C, D of the electrically conductive resistive electrode surface, and each is connected to an amplifier circuit. Using the voltages V A , V B , V C and V D generated at the four terminals, the detected positions X and Y of the gamma rays on the semiconductor plate are obtained as a function of V A , V B , V C and V D. .
ＣｄＴｅ結晶からなる半導体板をショットキー型の検出器にするために、片方の面を白金電極とし、もう片方の面をインジウム電極とする。インジウム電極面は、インジウムを薄く蒸着することにより電気伝導抵抗性を持たせる。これにより、半導体板のインジウム蒸着面が電気伝導抵抗性を持ち、かつ、半導体板がショットキー型の検出器として作動する。 In order to make a semiconductor plate made of CdTe crystal a Schottky detector, one surface is a platinum electrode and the other surface is an indium electrode. The indium electrode surface is provided with electric conduction resistance by thinly depositing indium. As a result, the indium vapor deposition surface of the semiconductor plate has electrical conductivity resistance, and the semiconductor plate operates as a Schottky detector.
１０ｍｍ×１０ｍｍ×１ｍｍのＣｄＴｅ結晶を準備し、その上に形成するインジウム電極面の厚さを変化させて、位置弁別能力を調べた結果、６００Åの厚さのものが最も良かった。
次に図２は、インジウム電極面の４隅のうちの２つから電極を２端子とり、また白金電極面から１端子とり、１ミクロンスポットサイズの陽子ビームを０．５ｍｍ間隔で照射した結果得られたＶａ／（Ｖａ＋Ｖｂ）の頻度を示すものである。図２より、この半導体検出器では０．２ｍｍ以上の位置分解能を得られていることが認められた。
As a result of preparing a CdTe crystal of 10 mm × 10 mm × 1 mm, changing the thickness of the indium electrode surface formed thereon, and examining the position discrimination ability, the one with a thickness of 600 mm was the best.
Next, FIG. 2 shows the result of taking two terminals from two of the four corners of the indium electrode surface and one terminal from the platinum electrode surface and irradiating a 1 micron spot size proton beam at 0.5 mm intervals. The frequency of Va / (Va + Vb) obtained is shown. From FIG. 2, it was confirmed that a position resolution of 0.2 mm or more was obtained with this semiconductor detector.
図３の下図は、半導体検出器ブロックの斜視図であり、図３の上図は、その左上部の部分断面図である。なお増幅器等の周辺装置は図示を省略してある。
半導体検出器ブロックは次のように形成される。
ＣｄＴｅ結晶からなる半導体板の白金電極面２同士を電気伝導性を持つペーストで相互に貼り付ける。これを、非常に薄い絶縁薄膜３と交互に幾重にも張り合わせることによって、力学的強度の無い薄い半導体板（ＣｄＴｅ結晶）からなる半導体検出器から、強度があり、しかも、高空間分解能でガンマ線の位置を３次元的に測定できる半導体検出器ブロックが形成される。
半導体検出器ブロックのどの半導体板でガンマ線が測定されたかは、白金電極とインジウム抵抗性電極の同時計数より決定される。
The lower diagram of FIG. 3 is a perspective view of the semiconductor detector block, and the upper diagram of FIG. 3 is a partial sectional view of the upper left portion thereof. Note that peripheral devices such as amplifiers are not shown.
The semiconductor detector block is formed as follows.
The platinum electrode surfaces 2 of the semiconductor plates made of CdTe crystals are pasted together with a paste having electrical conductivity. By laminating this with the very thin insulating thin film 3 alternately and repeatedly, the semiconductor detector made of a thin semiconductor plate (CdTe crystal) having no mechanical strength has high strength and high spatial resolution. A semiconductor detector block capable of measuring the position of the three-dimensionally is formed.
Which semiconductor plate of the semiconductor detector block has the gamma ray measured is determined by simultaneous counting of the platinum electrode and the indium resistive electrode.
次に陽電子断層撮影装置への適用について説明する。１０ｍｍ×１０ｍｍ×１８ｍｍの半導体検出器ブロックを数層にして円形又は対向型に並べる。半導体検出器ブロックは、動径方向又は対向方向に動く構造とする。
半導体検出器ブロックの電極面をガンマ線の検出方向に対して、垂直に配置することにより、パッキング比が１００％の陽電子断層撮影装置が実現される（図４）。
Next, application to a positron emission tomography apparatus will be described. The semiconductor detector blocks of 10 mm × 10 mm × 18 mm are arranged in several layers and arranged in a circular or opposed manner. The semiconductor detector block has a structure that moves in the radial direction or the opposite direction.
By arranging the electrode surface of the semiconductor detector block perpendicular to the gamma ray detection direction, a positron emission tomography apparatus with a packing ratio of 100% is realized (FIG. 4).
陽電子放出核種で標識した薬剤を人又は動物に投与し、陽電子消滅によって発生した２つのガンマ線を同時計数する。ガンマ線は半導体検出器ブロックの中の半導体板で検出され、電子と空孔が生じる。空孔は白金陰極に集められ、時間情報信号として増幅回路に入力される。電子はインジウム陽極に集まり、インジウム抵抗性電極面を通して増幅回路に流れる。この際、インジウム抵抗性電極面の４隅の４端子に繋がった増幅器から信号が生じる。この信号から半導体板面上でのガンマ線検出位置が決定される。ガンマ線がコンプトン散乱によって近傍にある二つの半導体検出器で同時に検出された場合、被写体に近い方を真の検出位置とする。 A drug labeled with a positron emitting nuclide is administered to a person or animal, and two gamma rays generated by positron annihilation are simultaneously counted. The gamma rays are detected by a semiconductor plate in the semiconductor detector block, and electrons and holes are generated. The holes are collected on the platinum cathode and input to the amplifier circuit as a time information signal. Electrons collect at the indium anode and flow to the amplifier circuit through the indium resistive electrode surface. At this time, a signal is generated from an amplifier connected to four terminals at the four corners of the indium resistive electrode surface. From this signal, the gamma ray detection position on the semiconductor plate surface is determined. When gamma rays are detected simultaneously by two semiconductor detectors in the vicinity by Compton scattering, the true detection position is the one closer to the subject.
半導体検出器ブロックの分解能は次のようにして上げることができる。まずレーザー光を被写体に当て、その反射を測定することにより、被写体の表面と検出器ブロックとの位置関係を求める。次に、半導体検出器ブロックを被写体に近づけてガンマ線の３次元位置検出を行う。
半導体検出器ブロックが独立して動くようにし、任意の形状の被写体に対して同時計数する半導体検出器ブロック間の距離を短くすることによって、高感度かつ高空間分解能の陽電子断層撮影画像が得られる。
半導体検出器ブロック間の距離を２０ｃｍ以下にすると、空間分解能は１ｍｍ以下の値にすることができることが実験的に分かった。本発明はこれにより、１ｍｍ以下の空間分解能を持った陽電子分布画像を実現する。
The resolution of the semiconductor detector block can be increased as follows. First, the positional relationship between the surface of the subject and the detector block is obtained by irradiating the subject with laser light and measuring the reflection. Next, the semiconductor detector block is brought close to the subject to detect the three-dimensional position of the gamma rays.
High sensitivity and high spatial resolution positron emission tomography images can be obtained by making the semiconductor detector blocks move independently and shortening the distance between the semiconductor detector blocks that simultaneously count the object of any shape. .
It has been experimentally found that the spatial resolution can be 1 mm or less when the distance between the semiconductor detector blocks is 20 cm or less. The present invention thereby realizes a positron distribution image having a spatial resolution of 1 mm or less.
従来の陽電子断層撮影装置では、空間分解能は３ｍｍ程度しか得られなかった。半導体片を用いしかも、薄くすることによって分解能を１ｍｍ以下にすることが可能になった。このため、マウスを用いた陽電子断層撮影装置による新薬剤の開発研究の展開を可能にするだけではなく、１ｍｍの微小癌を見つけることを可能にし、新薬剤の開発、がんの撲滅に大いに貢献するものと期待される。 With a conventional positron tomography apparatus, a spatial resolution of only about 3 mm can be obtained. It was possible to reduce the resolution to 1 mm or less by using a semiconductor piece and making it thin. For this reason, not only will it be possible to develop new drug development research using a positron emission tomography system using a mouse, but it will also be possible to find 1 mm micro-cancers, contributing greatly to the development of new drugs and the eradication of cancer. Expected to do.
１ インジウム電気伝導抵抗性電極面
２ 白金電気伝導性電極面
３ 絶縁薄膜
４ インジウム電気伝導抵抗性電極面端子
５ 白金伝導性電極面端子
DESCRIPTION OF SYMBOLS 1 Indium electrically conductive resistive electrode surface 2 Platinum electrically conductive electrode surface 3 Insulating thin film 4 Indium electrically conductive resistive electrode surface terminal 5 Platinum conductive electrode surface terminal
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| US9831375B2 (en) * | 2012-04-25 | 2017-11-28 | Westinghouse Electric Company Llc | Solid state radiation detector with enhanced gamma radiation sensitivity |
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| JP3427584B2 (en) * | 1995-03-22 | 2003-07-22 | 三菱電機株式会社 | Wide-area radiation detector |
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