JP4438325B2 - Charged particle intensity distribution measuring method and apparatus, and semiconductor manufacturing apparatus - Google Patents

Description

【００７３】
そして、上記式（１）により得られる校正値を用いた場合、たとえばファラデーＢの生の測定データＤ１_{β b}に対する校正後のデータ（換算値）Ｄ２_{β b}は、下記式（２）に従って求められる。
【数２】

【００７４】
また、差分を用いて校正値を算出する場合、式（３）に従って校正補正を行ない、式（４）に従って校正データ（換算値）を求める。
【数３】

【数４】

【００７５】
ここでは、ファラデーカップ１１２ａを基準ファラデーとするファラデーカップ１１２ｂの測定データに対する校正について説明したが、基準ファラデーをファラデーカップ１１２ｃあるいは１１２ｄにしてもよい。また、他のファラデーカップ１１２ａ，１１２ｃ，１１２ｄについても、所定のファラデーカップ１１２を基準ファラデーとして、同様にして測定を行なうことで、それぞれの校正値Ｄ２_{β a}，Ｄ２_{β c}，Ｄ２_{β d}を演算することが可能である。こうすることで、校正値演算部２０６は、測定子としての個々のファラデーカップ１１２の固有特性による影響（測定誤差）を排除することができる。
【００７６】
なお、この校正処理は、ビーム強度分布測定の都度行なう必要は必ずしもなく、所定のタイミングで行なうだけでも十分である。校正値を適宜チェックし直すことで、ビーム測定系やイオン注入装置の異常を検知することも可能となる。
【００７７】
強度分布演算部２０８は、このようにして得られたビーム強度測定信号Ｓ１ａ，Ｓ１ｂ，Ｓ１ｃ，Ｓ１ｄの各校正値Ｄ２βを用いて、ファラデーカップ測定子ごとの固有特性による影響を排除した真の荷電粒子ビーム強度分布を演算する。すなわち、同じ測定点でのビーム強度測定データを用いてファラデーカップの固有特性をキャンセル可能な補正を行なうことで、真のビームプロファイル結果を得ることができる。
【００７８】
以上の説明から分かるように、校正のための測定点の設定の際には、ビーム強度測定部１１０の傾き角と各ファラデーカップ１１２の配列ピッチとを考慮して設定する必要がある。なお、ビーム強度測定部１１０をＸ軸およびＹ軸の双方に対して傾けているので、移動方向に直交する測定点のピッチは、ファラデーカップ１１２のファラデーベース１１４上における配列ピッチよりも狭くすることができる利点がある（詳しくは後述する）。また、所定の測定点における測定が異なる時間に行なわれることとなるので、ビーム強度測定部１１０の移動中に、個々の測定データに対する前処理を行なっておくことができる利点もある。なお、傾き角を４５度に設定すれば、たとえば基準ファラデー１１２ａについての測定点ｂと、基準ファラデー１１２ｂについての測定点ｃと、基準ファラデー１１２ｃについての測定点ｄなどというように、複数の測定点におけるビーム強度測定信号Ｓ１の取得を同時に行なうことができる。
【００７９】
校正後の実際の測定に際しては、測定点の設定ピッチは自由である。たとえば、ビーム強度測定部１１０を所定方向に連続的に移動させつつ測定を行なってもよい。あるいは、所定の移動ピッチでビーム強度測定部１１０を移動させ、その移動ピッチごとに測定を行なってもよい。何れにしても、ファラデーカップ１１２の配列ピッチよりも狭い間隔で測定点を設定するように、２次元状にビーム強度測定部１１０を移動させた所定位置にて（実質的に動きながら）測定を行なうものであればよく、連続的な移動に限らず、ステップ状の移動でも構わない。
【００８０】
＜測定および校正の具体例；第２例＞
図７は、荷電粒子ビーム強度測定を行なう処理の第２例を説明する図である。この第２例の測定処理は、第１例と同様に平面状（２次元状）のビーム強度分布を測定する手法であって、上述した第３実施形態のビーム強度測定機構１００とともに用いるのに好適な手法である。
【００８１】
先ず測定位置制御部２０２は、ビーム強度測定機構１００の１軸可動ステージ１７０を用いて、図７（Ａ）に示すように、荷電粒子ビーム強度測定（モニタリング）を行ないながら回転軸１８６を制御してビーム強度測定部１１０を位置ａから位置ｂへと回動（９０°回転）させる。この後、Ｙ軸方向の荷電粒子ビーム強度測定（モニタリング）を行ないながら、Ｙ軸方向用駆動部１７８を制御して、ビーム強度測定部１１０を位置ｂから位置ｃへと、Ｙ軸方向に動かす。Ｙ軸方向移動中における測定点は、先のビーム強度測定部１１０を回動させている際の測定点と同じ位置となるようにする。図７（Ｂ）に示すように、本例では、測定点ｂａ，ｃｂ，ｄｃなどとする。
【００８２】
以下、第１例と同様にして、所定のファラデーカップ１１２を基準のファラデーカップとして測定した任意の測定点のデータと、他のファラデーカップ１１２で同じ測定点を測定したデータとを用いて、両者の強度比または差分値にて他のファラデーカップ１１２を校正する。そして、強度分布の実測値に対して校正することで、ファラデーカップ測定子ごとの固有特性による影響を排除した真の荷電粒子ビーム強度分布を得る。
【００８３】
＜測定および校正の具体例；第３例＞
図８は、荷電粒子ビーム強度測定を行なう処理の第３例を説明する図である。この第３例の測定処理は、第１例や第２例とは異なり、空間状（３次元状）のビーム強度分布を測定する手法である。ビーム強度測定機構１００を３次元状に移動可能に構成したものとともに用いるのに好適な手法である。
【００８４】
先ず、上述した第１例もしくは第２例のような方法に準じてビーム強度測定部１１０を移動させて測定を行なうことで、任意の平面の荷電粒子ビーム平面強度を測定する。この後、ビーム強度測定部１１０を所定ピッチでＺ軸方向へ動かして、再度、ビーム平面強度分布を同様にして測定する。これらを繰り返すことで、荷電粒子ビーム強度を３次元的に測定することができる。すなわち、Ｚ軸方向（高さ方向）にビーム強度測定部１１０が動くことで、荷電粒子ビーム強度の空間強度が、高さが変わることでどう変化しているかを測定することができる。
【００８５】
なお、所定のファラデーカップ１１２を基準ファラデーとして他のファラデーカップ１１２を校正する（２次元的位置をも加味した）手法と同様にして、３次元的な測定位置をも加味した校正を行なう際にも、上記空間強度測定と同様にして移動測定を行なうことで可能である。
【００８６】
＜測定および校正の具体例；第３例＞
図９は、ビーム強度測定部１１０をＸ軸およびＹ軸の双方に対して傾けて（斜め配置で）移動させることの優位点について説明する図である。図９（Ａ）に示すように、斜め配置で移動させると、モニタリング領域内では、移動によって各ファラデーカップ１１２の重なり（格子点）により形成される２次元格子状の測定点のピッチが、ファラデーベース１１４上におけるファラデーカップ１１２の配列ピッチよりも狭くなる。加えて、回転軸などを用いず、Ｘ，Ｙ方向の動き、すなわちビーム強度測定部１１０を斜め配置した状態を維持したままでの平行移動だけで、異なるファラデーの軌道を重ねることができる。このことは、固有特性の影響を排除するための校正測定に際して、ファラデーカップ１１２の移動をＸＹステージで構成できることを意味する。ＸＹステージは、機構が簡易であるから、ビーム強度測定機構１００を簡素化し、コストダウンすることができる。
【００８７】
一方、図９（Ｂ）に示すように、斜め配置を維持した状態での移動ができない構成の場合、移動によって各ファラデーカップ１１２の重なり（格子点）により形成される測定点のピッチは、ファラデーベース１１４上におけるファラデーカップ１１２の配列ピッチと同じになる。
【００８８】
また、図９（Ａ）と同様に測定点を２次元格子状に設定しようとすれば、位置ａ→位置ｂ→回転→位置ｃ→位置ｄというように、回転軸を支点とするファラデーベース１１４の９０度回転移動が必要になる。このことは、ファラデーカップ１１２の移動を、ＸＹステージだけでなく、回転機構を用いて実現しなければならないことを意味し、ビーム強度測定機構１００の構成が大掛かりになり、コストアップを招く。
【００８９】
なお、上記説明は、校正のための測定に関してであり、ビーム強度分布の測定の際には、測定ピッチを自由に設定できる。よって、図９（Ｂ）の構成であっても、ファラデーカップ１１２の配列ピッチよりも細かいピッチで測定点を設定しビーム強度分布を測定することは可能である。
【００９０】
以上説明したように、上記各実施形態のビーム強度測定機構１００に依れば、ビーム強度測定部１１０を移動させて、任意の測定点にてビーム強度測定信号Ｓ１を得ることを可能な構成にしたので、先ず、連続的あるいは自在に設定した細かなピッチでの荷電粒子ビーム強度分布測定が可能になる。また、イオンビームの平面強度を正確で細かく測定可能になることで、イオン注入装置などでビームを注入する際、注入ビーム強度を正確にかつ細かく補正することが可能となり、注入の均一性向上を図ることができる。
【００９１】
また、それぞれ異なる複数のファラデーカップ１１２にてビーム強度測定信号Ｓ１を取得し、得られる複数のビーム強度測定信号を用いて所定の演算手法に基づいて補正するようにすることで、荷電粒子ビーム測定ごとにファラデーカップの固有特性を測定することができる。荷電粒子ビーム測定ごとにファラデーカップの校正値を算出することで荷電粒子ビームの平面あるいは空間強度データの校正計算ができる。この結果、正確な荷電粒子ビームの任意の平面あるいは空間強度を測定することが可能となる。また、校正値を適宜チェックし直すことで、注入装置またはビーム測定系の異常を検知することも可能になる。また、荷電粒子ビーム測定ごとにファラデーカップの固有特性を測定でき、校正値を算出でき、補正が可能であるので、注入均一性の悪化を招くことがなくなる。また、ファラデーカップの固有特性の影響を気にすることなく部品を調達し、安定したビームプロファイル結果を得られる荷電粒子ビーム強度測定系を実現する（組み立てる）ことが可能になる。
【００９２】
以上、本発明を実施形態を用いて説明したが、本発明の技術的範囲は上記実施形態に記載の範囲には限定されない。発明の要旨を逸脱しない範囲で上記実施形態に多様な変更または改良を加えることができ、そのような変更または改良を加えた形態も本発明の技術的範囲に含まれる。
【００９３】
また、上記の実施形態は、クレーム（請求項）にかかる発明を限定するものではなく、また実施形態の中で説明されている特徴の組合せの全てが発明の解決手段に必須であるとは限らない。前述した実施形態には種々の段階の発明が含まれており、開示される複数の構成要件における適宜の組合せにより種々の発明を抽出できる。実施形態に示される全構成要件から幾つかの構成要件が削除されても、効果が得られる限りにおいて、この幾つかの構成要件が削除された構成が発明として抽出され得る。
【００９４】
たとえば、上記実施形態では、ビーム強度測定部１１０を２次元状もしくは３次元状に移動させて測定することで、ファラデーカップ１１２の固有特性を校正していたが、ビーム強度測定部１１０を１次元状にのみ移動させて測定することで、固有特性を校正してもよい。この場合、測定位置の影響を加味した校正とはならないものの、移動制御機構や演算処理が簡易になる利点がある。
【００９５】
図１０は、その仕組みを説明する図である。ここでは、Ｘ軸方向にビーム強度測定部１１０を移動させた場合を例示している。たとえば、複数のファラデーカップ１１２にてビーム強度を測定する際に、何れも、補正値算出用ビーム強度測定点（Ｘ１，Ｙ１）を測定点とする。そして、たとえば、先ず、ファラデーカップ１１２ａで、測定点（Ｘ１，Ｙ１）のビーム強度を測定した後、ファラデーカップ１１２ｂが測定点（Ｘ１，Ｙ１）に位置するようにＸ方向にビーム強度測定部１１０を移動させ、ファラデーカップ１１２ｂでビーム強度を測定する。以下同様にして、ファラデーカップ１１２ｃが測定点（Ｘ１，Ｙ１）に位置するようにＸ方向にビーム強度測定部１１０を移動させ、ファラデーカップ１１２ｃでビーム強度を測定し、さらに、ファラデーカップ１１２ｄが測定点（Ｘ１，Ｙ１）に位置するようにＸ方向にビーム強度測定部１１０を移動させ、ファラデーカップ１１２ｄでビーム強度を測定する。
【００９６】
こうすることで、複数のファラデーカップ１１２にて同一測定点のデータを取得できるので、これら複数のデータに基づいて、ファラデーカップ１１２の固有特性の影響を除去する校正を行なうことができる。なお、校正のための測定に限らず、ビーム強度の１次元分布（ライン分布）を測定する際にも、上述と同様に、一定方向のみにビーム強度測定部１１０を移動させればよい。その場合の測定ピッチは自由である。ステップ状に移動させて測定することに限らず、連続的に移動させつつ、任意の位置で測定を行なってもよい。何れにしても、ビーム強度測定部１１０を移動させて測定することができるので、ファラデーカップ１１２の配列ピッチよりも細かいピッチで測定点を設定し測定を行なうことができる。
【００９７】
上記実施形態では、ビーム強度測定部１１０を移動させて測定することで、基準ファラデーと校正対象のファラデーの各データ（校正のための基礎データ）を取得していたが、校正のための基礎データの取得は、必ずしもこのような手法に限らない。
【００９８】
たとえば、図１１（Ａ）に示すように、微小サイズのファラデーカップ１１３を複数個（図では１１３ａ〜１１３ｉの９個）を配置した構成のビーム強度測定部１１０としてもよい。各微小ファラデーカップ１１３ａ〜１１３ｉの集合体が、上記実施形態で示したファラデーカップ１１２のそれぞれ（１１２ａ〜１１２ｄ）に対応すると考えればよい。校正の際には、上記実施形態で示した測定点に対応する位置に、微小ファラデーカップ１１３の集合体を配置し、ほぼ同一測定点における微小ファラデーカップ１１３の何れか（たとえば１１３ａ）を基準ファラデーとして、他の微小ファラデーカップ１１３（たとえば１１３ｂ〜１１３ｉ）を校正する。
【００９９】
こうすることで、ファラデーベース１１４を移動させることなく、複数の微小ファラデーカップ１１３にて同一測定点のデータを取得できるので、これら複数のデータに基づいて、ファラデーカップ１１３の固有特性の影響を除去する校正を行なうことができる。
【０１００】
また、ビーム強度分布測定時には、ほぼ同一測定点のファラデーカップ１１３ａ〜１１３ｉのデータ値に基づき、たとえば平均値やメディアン値（中央値）などを使用して分布を特定することとすれば、測定精度がさらに増す。また、ファラデーカップ１１３ａ〜１１３ｉの何れかに故障が発生した場合には、その故障カップを使用しないこととしても、校正やビーム強度分布測定に不都合が生じない利点もある。
【０１０１】
また、図１１（Ｂ）に示すように、それぞれ異なるファラデーベース１１４ａ，１１４ｂを回転軸１１４ｃを支点として回動自在に設け、各ファラデーベース１１４ａ，１１４ｂ上に、ファラデーカップ１１２を所定ピッチで配列した構成のビーム強度測定部１１０とすることもできる。この場合、校正の際には、ファラデーベース１１４ａ，１１４ｂを回転させることで、同一測定点に対して、ファラデーカップ１１２を実質的に交換する構成とする。一方、ビーム強度分布測定の際には、ファラデーベース１１４ａ，１１４ｂの何れか一方の上に配されたファラデーカップ１１２ａ〜１１２ｄを用いる。
【０１０２】
こうすることで、複数の微小ファラデーカップ１１２にて同一測定点のデータを取得できるので、これら複数のデータに基づいて、ファラデーカップ１１２の固有特性の影響を除去する校正を行なうことができる。また、ファラデーベース１１４ａ，１１４ｂの何れか一方の何れかのファラデーカップ１１２に故障が発生した場合には、ファラデーベース１１４ａ，１１４ｂを切り換えて測定することができる利点もある。
【０１０３】
なお、上記説明は、何れも、ビーム強度分布測定だけでなく、ファラデーカップの固有特性を排除するための校正用の基礎データ取得をも考慮したものであるが、校正機構を考慮することは必ずしも必須ではない。この場合、少なくともファラデーカップを細かく移動させることで、測定点を細かく設定する構造を有していればよく、異なるファラデーカップで同一測定点のデータを取得する構造を必要としない。
【０１０４】
たとえば、上記実施形態では、複数のファラデーカップ１１２がファラデーベース１１４上に所定ピッチで一列または複数列に配列させた構造のビーム強度測定部１１０を、１次元状、２次元状、もしくは３次元状に、ビーム照射領域のほぼ全面に対して移動可能な構造とすることで、１次元状、２次元状、もしくは３次元状に荷電粒子ビーム強度分布を測定可能な荷電ビーム強度分布測定装置（ビームプロファイルモニタ）を形成していたが、これに限らず、単一のファラデーカップ１１２のみでビーム強度測定部１１０を形成してもよい。
【０１０５】
この場合、ビーム強度測定部１１０を、１次元状、２次元状、もしくは３次元状に移動（走査）させて測定を行なうことでも、ビーム強度分布を測定可能である。単一のファラデーカップ１１２のみで測定するので、測定されたビーム強度分布には、固有特性によるばら付きの影響は生じないと考えてよい。
【０１０６】
たとえば、図１２（Ａ）に示すように、ＸＹステージの２軸可動ステージ１２０を備えた上記第１実施形態に対する変形例を構成することができる。このように、複数のファラデーカップ１１２を使用して２軸可動ステージ１２０を利用したビーム強度測定機構１００を構成したときと同様に、図１２（Ａ）に示すように、ＸＹステージを利用してビーム強度測定機構１００を構成すれば、コストダウンでき、またメンテナンス回数が少なくて済む利点が得られる。
【０１０７】
また、図１２（Ｂ）に示すように、アーム機構１５０を備えた上記第２実施形態に対する変形例を構成することもできる。なお、これらの変形例に限らず、第３実施形態のビーム強度測定機構１００に対しても、単一のファラデーカップ１１２のみを用いた構造に、同様に変形可能である。
【０１０８】
なお、複数個のファラデーカップ１１２を用いる上記第１〜第３の各実施形態と、単一のファラデーカップ１１２を用いる変形例との組合せとして、たとえば、当初は、複数個のファラデーカップ１１２にて測定を行なうとともに、何れかのファラデーカップ１１２が故障した際には他のファラデーカップ１１２で代用して測定することとすれば、最後の１個が故障するまで使用を継続することができる利点も得られる。
【０１０９】
なお、上記実施形態では、ビーム強度測定部１１０を移動させる機構を利用して、ファラデーカップ１１２の固有特性を校正する仕組みを説明したが、ファラデーカップ１１２の固有特性を校正する点にのみ着目すれば、複数のファラデーカップ１１２を同一測定点に配する仕組みは別として、上記実施形態で説明したデータ校正の仕組みは、ファラデーカップ１１２が固定配置されている装置にも適用可能である。
【０１１０】
たとえば、ビーム強度分布測定用のファラデーカップ１１２とは別に校正専用の基準ファラデーカップ１１２を用意して、所定の移動手段を用いて基準ファラデーカップ１１２を固定配置されたファラデーカップ１１２の位置とほぼ同じ位置に移動させて測定してもよい。こうすることで、基準ファラデーカップ１１２により得られる測定結果と固定配置されたファラデーカップ１１２の測定結果のずれを相殺するように補正することができる。
【０１１１】
【発明の効果】
以上のように、本発明に依れば、測定子の配列位置に測定ポイントが固定されることなくビーム強度分布を測定でき、また、測定子の固有特性の影響を受けることなく、ビーム強度分布を測定できる。これにより、精度のよい分布測定を行なうことができ、イオン注入装置などでビームを注入する際、注入ビーム強度を精度よく制御することが可能となり、注入の均一性向上を図ることができる。
【０１１２】
また、何れかの測定子に故障が発生しても、測定に悪影響を受けない利点がある。
【図面の簡単な説明】
【図１】 本発明に係る半導体製造装置の一実施形態を適用したイオン注入装置の構成例を概略的に示す側面図である。
【図２】 ビーム強度測定機構の第１実施形態を示す図である。
【図３】 ビーム強度測定機構の第２実施形態の全体概要を示す図である。
【図４】 ビーム強度測定機構の第３実施形態の全体概要を示す図である。
【図５】 ビーム強度の校正値を算出する機能部分や、真の荷電粒子ビーム強度分布を演算する機能部分をなす演算処理部の一構成例を示す機能ブロック図である。
【図６】 荷電粒子ビーム強度測定を行なう処理の第１例を説明する図である。
【図７】 荷電粒子ビーム強度測定を行なう処理の第２例を説明する図である。
【図８】 荷電粒子ビーム強度測定を行なう処理の第３例を説明する図である。
【図９】 ビーム強度測定部をＸ軸およびＹ軸の双方に対して傾けて移動させることの優位点について説明する図である。
【図１０】 ビーム強度測定部を１次元状にのみ移動させて測定することで、固有特性を校正する仕組みを説明する図である。
【図１１】 ファラデーカップの固有特性を校正する機能を実現するための、ビーム強度測定部の変形例を説明する図である。
【図１２】 単一のファラデーカップのみでビーム強度測定部を形成する場合のビーム強度測定機構の一例を示す図である。
【図１３】 従来のビーム強度測定部の構成例を示す図である。
【図１４】 図１３に示したビーム強度測定部を用いて測定した場合の問題点を説明する図である。
【符号の説明】
１…イオン注入装置、２…シールドボックス、３…高電圧ターミナル、５…加速管、６…ビームライン部、８…エンドステーション部、３２…イオン源、３４…質量分離器、３６…ビーム遮断器、８２…ウェーハ保持機構、１００…ビーム強度測定機構、１０１…マスク配置機構部、１０２…稼働機構部、１０４…ステージ、１１０…ビーム強度測定部、１１２，１１３…ファラデーカップ、１１４…ファラデーベース、１１６…信号出力部、１２０…２軸可動ステージ、１５０…アーム機構、１５６，１５７，１５８…回転軸、１７０…１軸可動ステージ、１８６…回転軸、２００…演算処理部、２０２…測定位置制御部、２０４…Ａ／Ｄ変換部、２０６…校正値演算部、２０８…強度分布演算部、Ｍ…ステンシルマスク、Ｗ…ウェーハ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and apparatus for measuring the intensity distribution of a charged particle beam suitable for use in a semiconductor manufacturing apparatus using charged particles such as an ion implantation apparatus, and a semiconductor manufacturing apparatus using this apparatus.
[0002]
[Prior art]
In order to form a doving region in a semiconductor substrate (hereinafter also referred to as a wafer), ion implantation in which impurity ions are implanted by an ion beam has been widely performed, and various methods are employed. For example, a method in which an ion beam is scanned in the X direction (horizontal direction) and the Y direction (vertical direction) by electrostatic deflection or electromagnetic deflection with respect to a fixed wafer, and the wafer is scanned in the X direction and Y direction. A method in which the ion beam is fixed and a wafer is mechanically scanned in the X direction and the Y direction.
[0003]
However, the conventional ion implantation apparatus tends to increase in size as the diameter of the semiconductor wafer increases, and this problem becomes more prominent as the wafer W becomes larger in diameter, and the installation area and manufacturing cost of the ion implantation apparatus increase dramatically. Increase. In addition, even when trying to reduce the size, the uniformity of ion implantation tends to be lost, and there is a problem that it is not possible to sufficiently cope with an increase in wafer diameter. In addition, as described in Non-Patent Document 1, in recent years, domestic semiconductor manufacturing has been shifting to a high-mix low-volume production system LSI.
[0004]
[Non-Patent Document 1]
“Extract with LSI manufacturing system”, Nikkei Microdevices, February 2001, p45
[0005]
As a technique for solving such problems, for example, a wafer having a large diameter of 300 mmφ or larger can be ion-implanted under uniform implantation conditions, and one semiconductor chip in the wafer is implanted as a unit. Patent Document 1 proposes a small ion implantation technique capable of controlling ion implantation conditions.
[0006]
[Patent Document 1]
JP-A-11-288680
[0007]
The technique described in Patent Document 1 uses a stencil ion implantation technique and is one of the manufacturing techniques suitable for high-mix low-volume production. In other words, this technique realizes that ion implantation can be performed for each chip of a device formed on a wafer using a stencil mask without using a conventional resist mask. Further, it is a technique that eliminates the need for a lithography process and a resist removal process, and is a technique that has a large cost impact.
[0008]
[Problems to be solved by the invention]
Here, in the technique described in Patent Document 1, in order to manufacture the same characteristics of all the chips of a device formed on a wafer, a beam intensity profile at the time of ion implantation into the chips is measured and confirmed. Usually, for the beam profile measurement, a Faraday cup 112 as a beam intensity measuring element is arranged in a vertical and horizontal sequence at a predetermined pitch on the Faraday base 114 (in the figure, 112a and the other 16 are arranged in a 4 × 4 total). The beam intensity measuring unit 110 is moved on the beam line and arranged at a predetermined fixed position, and the charged particle beam intensity is measured at the fixed position. For example, as shown in FIG. 13, a beam intensity measuring unit 110 having a structure in which a total of 16 Faraday cups 112 including 112a are arranged in a two-dimensional manner by 4 × 4 is used.
[0009]
However, it has been found that such a measurement method has the following problems. First, since the individual Faraday cups 112 arranged on the Faraday base 114 have inherent characteristics, there is a first problem that even if the same charged particle beam intensity is measured, different values are obtained. For this reason, it leads to the deterioration of ion implantation uniformity. For example, when the intensity measurement at the same position (same beam position) is performed using four of the Faraday cups 112a to 112d shown in FIG. 13, as shown in FIG. Even at four locations, there is a difference in measurement results.
[0010]
In addition, since the position of the Faraday cup 112 is fixed during the measurement of the charged particle beam intensity, the measurement pitch becomes the arrangement pitch of the Faraday cup 112, so that the measurement points are limited, and the second measurement that fine measurement cannot be performed. There is a problem. In addition, in the apparatus structure shown in Patent Document 1, since the Faraday cup 112 is two-dimensionally arranged and fixedly arranged, a third problem is that spatial charged particle beam intensity measurement is impossible. There's a problem. These second and third problems cause problems in the uniformity of ion implantation in the chip, as in the first problem.
[0011]
The present invention has been made in view of the above circumstances, and a first object thereof is to propose a mechanism capable of measuring the beam intensity distribution without fixing the measurement points at the arrangement positions of the Faraday cups.
[0012]
A second object of the present invention is to propose a mechanism capable of measuring the beam intensity distribution without being affected by the inherent characteristics of the Faraday cup.
[0013]
[Means for Solving the Problems]
  The present inventionHandThe law isMeasure the intensity of the charged particle at the same measurement point using a plurality of measuring elements, and use one of the measuring elements as a reference measuring element, and use a plurality of measuring elements at the same measuring point. For each measurement result obtained by the measurement using the remaining one of the above, the deviation from the measurement result obtained by the reference probe is canceled out, and the measurement result of the charged particle is corrected using this corrected measurement result. Measure the intensity distribution. In addition, when a failure occurs in any of the measuring elements, the measurement is performed without using the measuring element.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0020]
<Overall configuration of device>
FIG. 1 is a side view schematically showing a configuration example of an ion implantation apparatus to which an embodiment of a semiconductor manufacturing apparatus according to the present invention is applied. An ion implantation apparatus 1 shown in FIG. 1 includes a high voltage terminal 3 and an acceleration tube 5 which are high voltage parts accommodated in a shield box 2, a beam line part 6 and an end station part 8 provided outside the shield box 2, respectively. It is a vacuum system configured.
[0021]
A known ion source 32 and mass separator 34 are accommodated in the high voltage terminal 3, and a slit 35, a beam blocker 36, and a variable slit 37 are arranged in this order. The beam blocker 36 jumps up the ion beam L when a voltage is applied, and temporarily blocks the ion beam L toward the variable slit 37.
[0022]
A known acceleration tube 5 is attached to the high-voltage terminal 3, and a focusing lens 62 and an ion beam L are electromagnetically applied to a predetermined direction “a” and a direction “b” substantially orthogonal to “a” in a beam line portion 6 at the subsequent stage. An octopole scanner 63 for scanning at a minute angle, a contamination particle removal magnet 64, a focusing lens 65, and a non-contact beam ammeter 66 are provided.
[0023]
The focusing lenses 62 and 65 are electromagnetic, but may be electrostatic. When the ion beam L is scanned, the focusing lens 62 is used, and when the ion beam L described later is not scanned, the focusing lens 65 is used. For scanning the ion beam L, an electromagnetic deflection scanner other than the octopole scanner 63 may be used, and of course, an electrostatic deflection scanner may be used.
[0024]
The contamination particle removal magnet 64 removes ions and neutral particles whose charge has changed due to collision of ions with the residual gas after the mass separator 34, and the ion beam L is moved downward by the contamination particle removal magnet 64. It is bent at an angle of 90 degrees. The non-contact beam ammeter 66 electromagnetically measures the current of the ion beam L using a magnetic core and a coil provided on the outer periphery of the lower end portion of the beam line portion 6.
[0025]
In the end station 8, a beam intensity measuring mechanism 100 for monitoring the beam density distribution is provided at the incident position of the ion beam L on the beam line unit 6 side. For example, a wafer holding mechanism 82 is provided which includes, for example, a fixed base and a driving unit for moving the fixed base. Between the beam intensity measuring mechanism 100 and the wafer holding mechanism 8, an opening slightly larger than the shape of the chip formed in the wafer or an opening smaller than the shape of the chip is provided and is positioned immediately above the chip. A mask placement mechanism 101 for placing the stencil mask M so as to be fixed or movable is provided.
[0026]
The beam intensity measuring mechanism 100 in the illustrated example includes a beam intensity measuring unit (Faraday body) 110 provided with a Faraday cup (not shown), and an X direction that moves the beam intensity measuring unit 110 in the X direction (the depth direction on the paper surface). An operation mechanism unit 102 including a mechanical drive mechanism 102x and a Y-direction mechanical drive mechanism 102y that moves in a Y direction (left and right direction in the drawing) substantially perpendicular to the mechanical drive mechanism 102x, and a stage 104 that holds the operation mechanism unit 102 are provided. Yes.
[0027]
Further, the mask arrangement mechanism unit 101 in the illustrated example includes an X-direction mechanical drive mechanism 106x that holds the mask 105 and moves it in the X direction (depth direction on the paper surface), and a Y direction that is substantially perpendicular to the X-direction mechanical drive mechanism 106x. ) Moving mechanism unit 106 composed of a Y-direction mechanical drive mechanism 106 y and a stage 108 holding the operating mechanism unit 106.
[0028]
A wafer position detector 84 is fixed to the ceiling portion of the end station unit 8. The wafer position detector 84 is constituted by, for example, a CCD imaging camera, and detects the wafer position with reference to the alignment mark in the wafer W. However, the detector is not limited to the CCD imaging camera, and other detectors may be used. A position detection signal from the wafer position detector 84 is input to a control unit (not shown), and the control unit mechanically drives the wafer holding mechanism 82 in the X and Y directions, a rotation mechanism, and a tilt mechanism (not shown). ) Is controlled.
[0029]
The beam intensity measuring unit 110 of the beam intensity measuring mechanism 100 is inserted into the incident position of the ion beam L before ion implantation, and after the stencil mask M held by the mask arrangement mechanism unit 101 is disposed immediately below the stencil mask M. This is for confirming the consistency between the opening of the stencil mask M and the scan region of the ion beam L and measuring the density distribution of the beam current in the opening of the stencil mask M. When the scanning area of the ion beam L is inappropriate, the amplitude of the octopole scanner 63 is adjusted, and when the current density distribution is not uniform, the scanning speed of the ion beam is adjusted.
[0030]
At the time of ion implantation, the wafer holding mechanism 8 holds the wafer W, and the stencil mask M having an opening slightly larger than the shape of the chip formed on the wafer W or an opening smaller than the shape of the chip is positioned immediately above the chip. The wafer holding mechanism 82 is mechanically scanned in each direction of X and Y by a mechanical drive mechanism (not shown) at the incident position of the ion beam L scanned in two dimensions in the X and Y directions. inject.
[0031]
At this time, the injection of charged particles is controlled based on the previously measured beam intensity distribution so that a predetermined dose is uniformly obtained on the wafer W, in particular, with a chip as an injection unit. This control is performed by adjusting the mechanical scanning speed of the platen or the scanning speed of the ion beam.
[0032]
<Configuration of Beam Intensity Measuring Mechanism; First Embodiment>
FIG. 2 is a diagram illustrating a first embodiment of the beam intensity measurement mechanism 100. Here, FIG. 2A shows an overall outline of the beam intensity measuring mechanism 100 of the first embodiment. FIG. 2B is a diagram illustrating a configuration example of the beam intensity measurement unit 110 as a beam density distribution monitor used in the beam intensity measurement mechanism 100.
[0033]
The beam intensity measuring mechanism 100 of the first embodiment includes a beam intensity measuring unit (Faraday main body) 110 having a structure in which (mini) Faraday cups 112 are arranged in a row, the operating mechanism unit 102 and the stage 104 shown in FIG. And a two-axis movable (XY) stage 120 configured to be movable in the X direction and the Y direction while maintaining a constant inclination.
[0034]
Thereby, the beam intensity measuring mechanism 100 moves the beam intensity measuring unit 110 finely in a two-dimensional manner, for example, continuously or stepwise with a certain interval with respect to almost the entire surface of the beam irradiation region. Thus, the apparatus is configured as a charged beam intensity measuring apparatus (beam profile monitor) capable of finely measuring the charged particle beam intensity by setting a large number of measurement points in two dimensions (at arbitrary positions).
[0035]
As shown in FIG. 2A, as a specific configuration of the biaxial movable stage 120, as the structure of the X-direction mechanical drive mechanism 102x for moving the beam intensity measurement unit 110 in the X direction, first, 2 X-axis direction moving base 122 that also functions as a support base for axially movable stage 120, and fixedly attached to X-axis direction moving base 122, and extends in the X-axis direction to regulate movement in the X-axis direction And an elongated X-axis direction rail 124. The X-axis direction moving block 126 is configured to be movable along the X-axis direction rail 124 and extends in the Y-axis direction, and is fixed on the X-axis direction moving base 122 and the X-axis direction An X-axis direction drive unit 128 made of, for example, an actuator or a motor for driving the X-direction movement of the X-axis direction movement block 126 attached to one end 126a of the direction movement block 126 is provided. The X-axis direction moving block 126 also has a function as a Y-axis direction moving base.
[0036]
The biaxial movable stage 120 is first fixed and attached to the X-axis direction moving block 126 as the structure of the Y-direction mechanical drive mechanism 102y for moving the beam intensity measuring unit 110 in the Y direction. And a long Y-axis direction rail 134 extending in the Y-axis direction for defining the movement of. Further, the Y-axis direction moving block 136 is configured to be movable along the Y-axis direction rail 134 and is fixed on the X-axis direction moving block 126, and one end 136a of the Y-axis direction moving block 136 is fixed. And a Y-axis direction drive unit 138 made of, for example, an actuator or a motor for driving the Y-direction movement of the Y-axis direction movement block 136 attached to the Y-axis direction.
[0037]
In the Y-axis direction moving block 136, the beam intensity measuring unit 110 is fixed to both the X axis and the Y axis that are movable directions (drive axis directions) via the mounting arm 142 and the fixing member 144. It is fixed and attached diagonally with an angle (tilt) of.
[0038]
As shown in FIG. 2B, the beam intensity measuring unit 110 includes a (mini) Faraday cup 112 for measuring charged particle beam intensity, and a Faraday base 114 for fixing the Faraday cups 112 arranged in a row. And a signal output unit 116 composed of wiring for outputting a beam intensity measurement signal S1 (analog value) obtained by the Faraday cup 112. The arrangement pitch of the Faraday cups 112 is about 10 mm, for example. The size of each Faraday cup 112 is set to a size that can satisfy this arrangement pitch (of course, φ10 mm or less).
[0039]
In the illustrated example, the beam intensity measurement unit 110 includes four Faraday cups 112 (respectively indicated by reference elements a, b, c, and d) arranged on a Faraday base 114 in a line. Each Faraday cup 112 outputs a beam intensity measurement signal S1 (indicated by reference elements a, b, c, and d, respectively). Here, the Faraday cups 112 are arranged in a row, that is, the Faraday cups 112 are arranged in a one-dimensional (line) shape. However, the present invention is not limited to this, and the Faraday cups 112 are arranged in a plurality of rows, that is, the Faraday cups 112 are arranged. It is good also as a structure arranged in two dimensions (area).
[0040]
The beam intensity measurement mechanism 100 of the first embodiment includes such a biaxial movable stage 120 so that the beam intensity measurement unit 110 measures the beam intensity on the charged particle beam line at an arbitrary position on the XY coordinates. The beam intensity measuring unit 110 can be freely moved in the X-axis direction or the Y-axis direction so as to be able to do so.
[0041]
Further, after measuring the charged particle beam intensity at an arbitrary movable position (that is, a measurement point), the beam intensity data of the arbitrary measurement point (the beam intensity of the measurement target point) measured by a reference Faraday cup 112 (for example, 112a). Data; for example, D1a) and measurement point data (for example, D1b to D1d) obtained by measuring the same measurement target point with another Faraday cup 112 (for example, 112b to 112d excluding 112a), and the beam intensity of the measurement target point It has a function of calculating the calibration value D2. Further, the beam intensity measuring mechanism 100 has a function of calculating a true charged particle beam intensity distribution using the calibrated beam intensity data of the measurement target point.
[0042]
By providing such a function, the beam intensity measuring mechanism 100 moves several (four in this example) Faraday cups 112 to arbitrary positions so as to provide measurement points at a pitch narrower than the arrangement pitch. Can do. Therefore, by performing the beam intensity monitoring at an arbitrary measurement point regardless of the arrangement position of the Faraday cup 112, it becomes possible to perform a fine measurement, thereby increasing the monitoring accuracy. In addition, by measuring the same measurement point of a certain beam with a plurality of Faraday cups 112a to 112d, it is possible to correct the characteristic characteristic of each Faraday cup 112a to 112d and to improve the uniformity of the beam irradiation region. .
[0043]
The arithmetic processing unit 200 that forms the functional part for calculating the calibration value of the beam intensity and the functional part for calculating the true charged particle beam intensity distribution may be provided integrally with the biaxial movable stage 120. In this embodiment, it is set as the structure provided in the ion implantation apparatus main body. For example, the control computer of the apparatus main body is configured to have the function.
[0044]
In the configuration of the first embodiment, since the movable range is substantially defined by the length in the movable direction by the moving stage, there is a degree of freedom in setting measurement points when measuring the beam intensity distribution. In addition, since it is based on a movable stage structure that is easy to obtain and manufacture, it can be installed at low cost and requires fewer maintenance.
[0045]
Further, since the measurement is performed by moving the Faraday cup 112, it is not necessary to arrange the Faraday cup 112 over the entire measurement target area, and the beam intensity distribution over the entire measurement target area is measured with a small number of Faraday cups 112. There is also an advantage that can be done. Further, when any Faraday cup 112 on the Faraday base 114 breaks down, the data of the measurement point corresponding to the failure location can be substituted with another Faraday cup 112 without using the failure location. There are also advantages.
[0046]
<Configuration of Beam Intensity Measuring Mechanism; Second Embodiment>
FIG. 3 is a diagram showing an overall outline of the second embodiment of the beam intensity measuring mechanism 100. The beam intensity measurement mechanism 100 according to the second embodiment includes an arm mechanism 150 having an arm that moves in the XY directions instead of the biaxial movable stage 120, whereby the beam intensity measurement unit 110 is provided as in the first embodiment. Charge beam intensity that allows fine measurement of charged particle beam intensity by setting a large number of measurement points in a two-dimensional manner by finely moving the beam to almost the entire surface of the beam irradiation region It is configured as a measuring device.
[0047]
As shown in FIG. 3, the specific structure of the arm mechanism 150 includes a robot arm fixing portion 152 that also functions as a support base of the arm mechanism 150, and a plurality of robot arms (two in this example; 154, respectively). 155) and a plurality of arm operation rotating shafts (three in this example; indicated by 156, 157 and 158, respectively). The arm mechanism 150 functions as the X-direction mechanical drive mechanism 102x and the Y-direction mechanical drive mechanism 102y in FIG.
[0048]
The first arm operating rotary shaft 156 is located on the robot arm fixing portion 152 and one end 154a of the first robot arm 154, and rotates the robot arm 154 with the arm operating rotary shaft 156 as a fulcrum. It is mounted movably. The second arm operating rotary shaft 157 is located at the other end 154b of the first robot arm 154 and one end 155a of the second robot arm 155, and the arm operating rotary shaft 157 is a fulcrum. As shown, two robot arms 154 and 155 are rotatably attached.
[0049]
The third arm operating rotary shaft 158 is located at the other end 155b of the second robot arm 155 and one end 142a of the mounting arm 142 that supports the beam intensity measuring unit 110, and operates the arm. The robot arm 155 and the beam intensity measuring unit 110 are pivotably attached with the rotary shaft 158 as a fulcrum.
[0050]
The beam intensity measuring unit 110 can be rotated in the R direction shown in the figure with the arm operating rotation shaft 158 as a fulcrum regardless of the movement of the robot arm 155. The arm operating rotary shafts 156, 157, and 158 are provided with a drive unit such as a motor (not shown).
[0051]
Since the first arm operating rotary shaft 156 is fixed to the robot arm fixing portion 152, the X and Y coordinate positions are made immovable, whereas the second and third arms The operating rotary shafts 157 and 158 are movable in the X and Y coordinate positions.
[0052]
Here, in the beam intensity measurement mechanism 100 of the second embodiment, when the arm mechanism 150 is operated, the beam intensity measurement unit 110 having the same structure as the first embodiment in which the Faraday cups 112 are arranged in a line is fixed. It is possible to move in the X direction and the Y direction while maintaining the inclination. In addition, since the beam intensity measurement unit 110 is configured to be rotatable in the R direction illustrated with the arm operation rotation shaft 158 as a fulcrum, the third arm operation rotation shaft 157 is in operation while the arm mechanism 150 is in operation. The tilt of the beam intensity measuring unit 110 with respect to the X-axis and the Y-axis is variably configured both when the X and Y coordinate positions move and when they are fixed.
[0053]
The beam intensity measurement mechanism 100 of the second embodiment includes such an arm mechanism 150, so that the beam intensity measurement unit 110 determines the beam intensity on the charged particle beam line in the XY coordinates, as in the configuration of the first embodiment. The structure is such that the beam intensity measurement unit 110 can be freely moved in the X-axis direction or the Y-axis direction so that measurement can be performed at any arbitrary position. From the beam intensity measurement unit 110, beam intensity data S1 measured at an arbitrary measurement point in the XY coordinates is sent to the arithmetic processing unit 200.
[0054]
In the configuration of the second embodiment, since the movable range is defined within the range that the arm can reach, the degree of freedom of measurement points is high as in the first embodiment. That is, the Faraday cup 112 can be moved to an arbitrary position so that the measurement points are given at a pitch narrower than the arrangement pitch of the Faraday cup 112. In addition, although it is more difficult to obtain than the stage mechanism, there is an advantage that it can be made compact. In addition, there is an advantage that it can be expanded to three-dimensional movement only by making the arm operation rotating shafts 156, 157, and 158 into a universal joint structure.
[0055]
<Configuration of Beam Intensity Measuring Mechanism; Third Embodiment>
FIG. 4 is a diagram showing an overall outline of the third embodiment of the beam intensity measurement mechanism 100. The beam intensity measurement mechanism 100 of the third embodiment is a uniaxial movable stage that can move the beam intensity measurement unit 110 only in one direction (Y direction in this example) instead of the biaxial movable stage 120 of the first embodiment. 170 and the movable part of the beam intensity measurement unit 110 are provided with a rotation mechanism, and, as in the first embodiment, the beam intensity measurement unit 110 is finely moved two-dimensionally with respect to almost the entire surface of the beam irradiation region. Thus, the apparatus is configured as a charged beam intensity measuring apparatus that can set a large number of measurement points in a two-dimensional manner and perform fine measurement of the charged particle beam intensity.
[0056]
As shown in FIG. 4, the specific configuration of the uniaxial movable stage 170 is almost the same as that of the biaxial movable stage 120 of the first embodiment provided with only the mechanism in the Y-axis direction. That is, first, a Y-axis direction moving base 172 (X-axis direction moving block 126) that is fixedly attached to a predetermined stage (which may be the X-axis direction moving base 122) and extends in the Y-axis direction. And a long Y-axis direction rail 174 that is fixedly attached to the Y-axis direction movement base 172 and extends in the Y-axis direction for defining movement in the Y-axis direction.
[0057]
Further, the Y-axis direction moving block 176 configured to be movable along the Y-axis direction rail 174 and the one end 176a of the Y-axis direction moving block 176 are fixed on the Y-axis direction moving base 172. And a Y-axis direction drive unit 178 made of, for example, an actuator or a motor for driving the Y-direction movement of the Y-axis direction movement block 176 attached to the Y-axis direction.
[0058]
In the Y-axis direction moving block 176, the beam intensity measuring unit 110 is connected to the rotation shaft 186 via the mounting arm 182, the fixing member 184, and the rotation shaft 186 provided between the mounting arm 182 and the fixing member 184. Is attached so as to be rotatable in the R direction shown in the figure. The rotating shaft 186 is provided with a drive unit such as a motor (not shown).
[0059]
The beam intensity measurement mechanism 100 according to the third embodiment includes such a uniaxial movable stage 170 so that the beam intensity measurement unit 110 can measure the beam intensity on the charged particle beam line as in the configuration of the first embodiment. The beam intensity measuring unit 110 can be freely moved in the Y-axis direction so that measurement can be performed at an arbitrary position on the XY coordinates, and the structure can be rotated in the R direction with the rotation shaft 186 as a fulcrum. From the beam intensity measurement unit 110, beam intensity data S1 measured at an arbitrary measurement point in the XY coordinates is sent to the arithmetic processing unit 200.
[0060]
In the configuration of the third embodiment, the movable range is substantially defined within the rotation range of the beam intensity measuring unit 110, so the degree of freedom of the measurement point is inferior to that of the first and second embodiments, but it is compact. There is an advantage that can be configured. In addition, there is an advantage that the rotation shaft 186 can be expanded to a three-dimensional movement only by having a universal joint structure.
[0061]
<Deformation to three-dimensional movement>
In each of the first to third beam intensity measurement mechanisms 100 described above, the beam intensity measurement unit 110 is two-dimensionally (area-controlled) on an XY coordinate plane defined by the X axis and the Y axis orthogonal to each other. However, the configuration is also not limited to two-dimensional (area) but three-dimensional (space) by adding a configuration that can also drive the Z-axis orthogonal to both the X-axis and the Y-axis. The beam intensity measuring unit 110 can also be configured to be movable in the shape of
[0062]
For example, in the configuration of the first embodiment, a drive mechanism that moves the X-axis direction moving base 122 in the Z-axis direction may be added. In the configuration of the second embodiment, a drive mechanism that moves the robot arm fixing unit 152 in the Z-axis direction may be added. Alternatively, the arm operating rotary shafts 156, 157, and 158 are replaced with, for example, universal joints using spherical members, and a drive unit is provided to move the robot arms 154 and 155 in the X, Y, and Z directions (that is, three-dimensionally). It may be an arm mechanism that moves freely (in the form of (space)). In the configuration of the third embodiment, a drive mechanism that moves the Y-axis direction moving base 172 in the Z-axis direction may be added. In the case of the configuration of each of the second and third embodiments, the movable range becomes narrow, but only the arm operating rotary shaft 158 and the rotary shaft 186 that are the rotary shafts on the beam intensity measuring unit 110 side are replaced with a universal joint. In addition, by providing a driving unit, only the beam intensity measuring unit 110 may move in a three-dimensional manner with the universal joint as a fulcrum.
[0063]
<Beam intensity calibration mechanism and beam intensity distribution calculation mechanism>
FIG. 5 is a functional block diagram showing a configuration example of an arithmetic processing unit 200 that forms a functional part for calculating a calibration value of beam intensity and a functional part for calculating a true charged particle beam intensity distribution. The arithmetic processing unit 200 first includes a measurement position control unit 202 that controls the X-axis direction driving unit 128 and the Y-axis direction driving unit 138 of the biaxial movable stage 120.
[0064]
The arithmetic processing unit 200 takes in the charged particle beam intensity data (analog value measurement signal) S1 measured by the beam intensity measurement unit 110 under the control of the measurement position control unit 202 and converts it into digital data. Unit 204, a calibration value calculation unit 206 that corrects the intrinsic characteristics of the Faraday cup 112 based on the digital data D1 of the measurement signal S1 obtained by the beam intensity measurement unit 110, and correction (calibration) by the calibration value calculation unit 206. An intensity distribution calculation unit 208 that calculates a true charged particle beam intensity distribution D3 using the beam intensity data D2 thus obtained.
[0065]
The measurement position control unit 202 moves the beam intensity measurement unit 110 in a two-dimensional manner by moving the beam intensity measurement unit 110 in a two-dimensional manner, for example, continuously or stepwise with a certain interval with respect to almost the entire beam irradiation region. A number of measurement points are set in a dimensional manner (at arbitrary positions), and the beam intensity measurement signal S1 at each measurement point is measured. At this time, the measurement position control unit 202 has a plurality of other Faraday cups 112 (for example, FIG. 2) at the point where the charged particle beam intensity measurement of one Faraday cup 112 (for example, 112a in FIG. 2B) is performed. The beam intensity measuring unit 110 is moved by controlling the X-axis direction driving unit 128 and the Y-axis direction driving unit 138 so that the beam intensity can be measured also in (B) 112b to 112d).
[0066]
The calibration value calculation unit 206 obtains the measurement intensity ratio or difference based on the beam intensity signals S1a to S1d from the plurality of Faraday cups 112a to 112d for the same arbitrary measurement point thus obtained. The characteristic characteristic of the Faraday cup 112 to be calibrated is corrected.
[0067]
<Specific examples of measurement and calibration; First example>
FIG. 6 is a diagram illustrating a first example of a process for performing charged particle beam intensity measurement performed by using the beam intensity measuring mechanism 100 and the arithmetic processing unit 200 having the above-described configuration. The measurement processing of the first example is a technique for measuring a planar (two-dimensional) beam intensity distribution, and is a technique suitable for use with the beam intensity measurement mechanism 100 of the first and second embodiments described above. It is.
[0068]
First, the measurement position control unit 202 uses the biaxial movable stage 120 or the arm mechanism 150 that moves in the X-axis direction and the Y-axis direction of the beam intensity measurement mechanism 100, as shown in FIG. While performing charged particle beam intensity measurement (monitoring), the Y-axis direction drive unit 138 and the like are controlled to move the beam intensity measurement unit 110 from position a to position b in the Y-axis direction. Thereafter, the X-axis direction drive unit 128, the Y-axis direction drive unit 138, and the like are controlled to move the beam intensity measurement unit 110 from the position b to the position c. At this time, charged particle beam intensity measurement is not necessarily required. Then, while measuring (monitoring) the charged particle beam intensity in the X-axis direction, the X-axis direction driving unit 128 and the like are controlled to move the beam intensity measuring unit 110 from the position c to the position d in the X-axis direction. .
[0069]
The measurement point during movement in the X-axis direction is set to the same position as the measurement point during movement in the previous Y-axis direction. As shown in FIG. 6B, in this example, the measurement points are ab, ac, ad, and the like.
[0070]
The actual measurement values acquired at each Faraday cup at different measurement points ab, ac, and ad are supposed to be the same data for each measurement point, but vary due to the influence of the Faraday inherent difference. On the other hand, when measuring the beam intensity distribution, the accuracy of the absolute value of the measurement data is not necessary, and it is sufficient if it can be assured that the same data can be obtained regardless of which Faraday cup 112 is used. Therefore, the arithmetic processing unit 200 obtains a variation with respect to the reference Faraday at each measurement point, and corrects this to eliminate an error due to the Faraday inherent difference. Obtaining variation with respect to the reference Faraday corresponds to a normalization process (conversion process) in which a predetermined Faraday is used as the reference Faraday. The reason for setting a plurality of measurement points at different positions is to increase the accuracy of calibration by taking into account the influence of the measurement positions. Of course, although the calibration accuracy is inferior, it may be calibrated by measuring once at the same measurement point, preferably a plurality of times.
[0071]
For example, first, the calibration value calculation unit 206 uses the reference Faraday cup 112 to measure data D1 of an arbitrary measurement point measured when the beam intensity measurement unit 110 moves the Y axis, for example, measurement points ab, ac using the Faraday cup 112a as a reference Faraday. , Ad measured data D1ab, D1ac, D1ad and the remaining Faraday cups 112b-112d measured the same measurement points ab, ac, ad when the beam intensity measurement unit 110 moves the X axis, and measured data D1bb, D1cc, Using D1dd, the calibration value D2 with the other Faraday cups 112b, 112c, 112d is calculated with the intensity ratio or the difference value.
[0072]
And when calculating a calibration value using an intensity ratio, it is as follows. That is, first, the data value D1 obtained by measuring the beam intensity at an arbitrary measurement point i with the reference Faraday A._{α i}Data value D1 obtained by measuring the same measurement point with other Faraday B_{β i}Is used to correct the calibration according to the following equation (1). Note that “n” is the number of measurement points, and the average value is used for calibration correction by dividing by the number n of measurement points.
[Expression 1]

[0073]
When the calibration value obtained by the above equation (1) is used, for example, the raw measurement data D1 of Faraday B_{β b}Data after calibration (converted value) D2_{β b}Is obtained according to the following equation (2).
[Expression 2]

[0074]
When calculating the calibration value using the difference, calibration correction is performed according to the equation (3), and calibration data (converted value) is obtained according to the equation (4).
[Equation 3]

[Expression 4]

[0075]
Here, the calibration for the measurement data of the Faraday cup 112b using the Faraday cup 112a as the reference Faraday has been described, but the reference Faraday may be the Faraday cup 112c or 112d. In addition, the other Faraday cups 112a, 112c, and 112d are measured in the same manner using the predetermined Faraday cup 112 as a reference Faraday, so that each calibration value D2 is measured._{β a}, D2_{β c}, D2_{β d}Can be calculated. By doing so, the calibration value calculation unit 206 can eliminate the influence (measurement error) due to the unique characteristics of the individual Faraday cups 112 as the measuring elements.
[0076]
It is not always necessary to perform this calibration process every time the beam intensity distribution is measured, and it is sufficient to perform it at a predetermined timing. By rechecking the calibration values as appropriate, it is possible to detect abnormalities in the beam measurement system and the ion implantation apparatus.
[0077]
The intensity distribution calculation unit 208 uses the calibration values D2β of the beam intensity measurement signals S1a, S1b, S1c, and S1d obtained in this way, and eliminates the influence due to the unique characteristics of each Faraday cup probe. Calculate the particle beam intensity distribution. In other words, a true beam profile result can be obtained by performing correction that can cancel the characteristic of the Faraday cup using the beam intensity measurement data at the same measurement point.
[0078]
As can be seen from the above description, when setting the measurement points for calibration, it is necessary to set the measurement in consideration of the inclination angle of the beam intensity measurement unit 110 and the arrangement pitch of the Faraday cups 112. Since the beam intensity measuring unit 110 is tilted with respect to both the X axis and the Y axis, the pitch of the measurement points orthogonal to the moving direction should be narrower than the arrangement pitch on the Faraday base 114 of the Faraday cup 112. There is an advantage that can be performed (details will be described later). Further, since measurement at a predetermined measurement point is performed at different times, there is an advantage that pre-processing can be performed on individual measurement data while the beam intensity measurement unit 110 is moving. If the tilt angle is set to 45 degrees, a plurality of measurement points such as a measurement point b for the reference Faraday 112a, a measurement point c for the reference Faraday 112b, a measurement point d for the reference Faraday 112c, etc. The beam intensity measurement signal S1 can be simultaneously acquired.
[0079]
In actual measurement after calibration, the setting pitch of the measurement points is arbitrary. For example, the measurement may be performed while continuously moving the beam intensity measuring unit 110 in a predetermined direction. Alternatively, the beam intensity measurement unit 110 may be moved at a predetermined movement pitch, and measurement may be performed for each movement pitch. In any case, measurement is performed at a predetermined position (substantially moving) at which the beam intensity measurement unit 110 is moved in a two-dimensional manner so that measurement points are set at an interval narrower than the arrangement pitch of the Faraday cups 112. What is necessary is just to perform, and the movement is not limited to continuous movement, but may be stepwise movement.
[0080]
<Specific example of measurement and calibration; second example>
FIG. 7 is a diagram for explaining a second example of processing for performing charged particle beam intensity measurement. The measurement process of the second example is a technique for measuring a planar (two-dimensional) beam intensity distribution as in the first example, and is used with the beam intensity measurement mechanism 100 of the third embodiment described above. This is a preferred method.
[0081]
First, the measurement position control unit 202 controls the rotating shaft 186 while performing charged particle beam intensity measurement (monitoring), as shown in FIG. 7A, using the uniaxial movable stage 170 of the beam intensity measurement mechanism 100. Then, the beam intensity measuring unit 110 is rotated (rotated 90 °) from the position a to the position b. Thereafter, while measuring (monitoring) the charged particle beam intensity in the Y-axis direction, the Y-axis direction driving unit 178 is controlled to move the beam intensity measuring unit 110 from the position b to the position c in the Y-axis direction. . The measurement point during movement in the Y-axis direction is set to the same position as the measurement point when the beam intensity measurement unit 110 is rotated. As shown in FIG. 7B, in this example, the measurement points are ba, cb, dc, and the like.
[0082]
Hereinafter, in the same manner as in the first example, both data using arbitrary measurement points measured using a predetermined Faraday cup 112 as a reference Faraday cup and data obtained by measuring the same measurement points with other Faraday cups 112 are used. The other Faraday cup 112 is calibrated with the intensity ratio or difference value. Then, by calibrating the actually measured value of the intensity distribution, a true charged particle beam intensity distribution is obtained in which the influence of the unique characteristics of each Faraday cup probe is eliminated.
[0083]
<Specific example of measurement and calibration; third example>
FIG. 8 is a diagram for explaining a third example of processing for performing charged particle beam intensity measurement. Unlike the first and second examples, the measurement process of the third example is a technique for measuring a spatial (three-dimensional) beam intensity distribution. This is a method suitable for use with the beam intensity measuring mechanism 100 that is configured to be movable three-dimensionally.
[0084]
First, the charged particle beam plane intensity of an arbitrary plane is measured by moving the beam intensity measurement unit 110 according to the method of the first example or the second example described above and performing the measurement. Thereafter, the beam intensity measuring unit 110 is moved in the Z-axis direction at a predetermined pitch, and the beam plane intensity distribution is again measured in the same manner. By repeating these, the charged particle beam intensity can be measured three-dimensionally. That is, it is possible to measure how the spatial intensity of the charged particle beam intensity changes as the height changes by moving the beam intensity measuring unit 110 in the Z-axis direction (height direction).
[0085]
In the same way as the method of calibrating other Faraday cups 112 using a predetermined Faraday cup 112 as a reference Faraday (including a two-dimensional position), when performing a calibration including a three-dimensional measurement position. However, it is possible to perform the movement measurement in the same manner as the spatial intensity measurement.
[0086]
<Specific example of measurement and calibration; third example>
FIG. 9 is a diagram for explaining the advantages of moving the beam intensity measurement unit 110 while being inclined (in an oblique arrangement) with respect to both the X axis and the Y axis. As shown in FIG. 9 (A), when moved in an oblique arrangement, the pitch of the two-dimensional lattice-shaped measurement points formed by the overlapping (grid points) of the Faraday cups 112 by the movement in the monitoring region is Faraday. It becomes narrower than the arrangement pitch of the Faraday cups 112 on the base 114. In addition, different Faraday trajectories can be overlapped only by movement in the X and Y directions, that is, by translation while maintaining the state in which the beam intensity measuring unit 110 is obliquely arranged without using a rotating shaft or the like. This means that the movement of the Faraday cup 112 can be configured with an XY stage in the calibration measurement for eliminating the influence of the inherent characteristics. Since the mechanism of the XY stage is simple, the beam intensity measuring mechanism 100 can be simplified and the cost can be reduced.
[0087]
On the other hand, as shown in FIG. 9B, in the case where the structure cannot be moved while maintaining the oblique arrangement, the pitch of the measurement points formed by the overlapping (grid points) of the Faraday cups 112 by the movement is Faraday. This is the same as the arrangement pitch of the Faraday cups 112 on the base 114.
[0088]
9A, if the measurement points are set in a two-dimensional grid, the Faraday base 114 having the rotation axis as a fulcrum, such as position a → position b → rotation → position c → position d. 90 ° rotational movement is required. This means that the movement of the Faraday cup 112 must be realized by using not only the XY stage but also the rotation mechanism, and the configuration of the beam intensity measurement mechanism 100 becomes large, resulting in an increase in cost.
[0089]
The above description relates to measurement for calibration, and the measurement pitch can be freely set when measuring the beam intensity distribution. Therefore, even with the configuration of FIG. 9B, it is possible to set the measurement points at a pitch finer than the array pitch of the Faraday cups 112 and measure the beam intensity distribution.
[0090]
As described above, according to the beam intensity measurement mechanism 100 of each of the above embodiments, the beam intensity measurement unit 110 can be moved to obtain the beam intensity measurement signal S1 at an arbitrary measurement point. Therefore, first, it becomes possible to measure the charged particle beam intensity distribution at a fine pitch set continuously or freely. In addition, since the planar intensity of the ion beam can be measured accurately and finely, it is possible to accurately and finely correct the implantation beam intensity when the beam is implanted with an ion implantation apparatus or the like, thereby improving the uniformity of implantation. Can be planned.
[0091]
Further, the charged particle beam measurement is performed by acquiring the beam intensity measurement signal S1 with a plurality of different Faraday cups 112 and correcting the beam intensity measurement signal based on a predetermined calculation method using the plurality of beam intensity measurement signals obtained. The characteristic of the Faraday cup can be measured every time. By calculating the calibration value of the Faraday cup for each charged particle beam measurement, it is possible to calibrate the plane or spatial intensity data of the charged particle beam. As a result, it is possible to measure an arbitrary plane or spatial intensity of an accurate charged particle beam. In addition, it is possible to detect an abnormality in the implantation apparatus or the beam measurement system by rechecking the calibration value as appropriate. Further, the characteristic of the Faraday cup can be measured every time the charged particle beam is measured, the calibration value can be calculated, and the correction can be made. In addition, it is possible to procure parts without worrying about the influence of the unique characteristics of the Faraday cup and to realize (assemble) a charged particle beam intensity measurement system that can obtain a stable beam profile result.
[0092]
As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. Various changes or improvements can be added to the above-described embodiment without departing from the gist of the invention, and embodiments to which such changes or improvements are added are also included in the technical scope of the present invention.
[0093]
Further, the above embodiments do not limit the invention according to the claims (claims), and all combinations of features described in the embodiments are not necessarily essential to the solution means of the invention. Absent. The embodiments described above include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. Even if some constituent requirements are deleted from all the constituent requirements shown in the embodiment, as long as an effect is obtained, a configuration from which these some constituent requirements are deleted can be extracted as an invention.
[0094]
For example, in the above embodiment, the intrinsic characteristics of the Faraday cup 112 are calibrated by measuring the beam intensity measurement unit 110 while moving the beam intensity measurement unit 110 in a two-dimensional or three-dimensional manner. The characteristic characteristic may be calibrated by moving only in the shape of the measurement. In this case, although the calibration does not take into account the influence of the measurement position, there is an advantage that the movement control mechanism and the arithmetic processing are simplified.
[0095]
FIG. 10 is a diagram for explaining the mechanism. Here, a case where the beam intensity measurement unit 110 is moved in the X-axis direction is illustrated. For example, when measuring the beam intensity with a plurality of Faraday cups 112, the correction value calculation beam intensity measurement points (X1, Y1) are all used as measurement points. For example, first, after measuring the beam intensity at the measurement point (X1, Y1) with the Faraday cup 112a, the beam intensity measurement unit 110 in the X direction so that the Faraday cup 112b is positioned at the measurement point (X1, Y1). And the beam intensity is measured with the Faraday cup 112b. Similarly, the beam intensity measuring unit 110 is moved in the X direction so that the Faraday cup 112c is positioned at the measurement point (X1, Y1), the beam intensity is measured with the Faraday cup 112c, and the Faraday cup 112d is further measured. The beam intensity measurement unit 110 is moved in the X direction so as to be positioned at the point (X1, Y1), and the beam intensity is measured by the Faraday cup 112d.
[0096]
By doing so, data of the same measurement point can be acquired by a plurality of Faraday cups 112, and therefore, calibration that removes the influence of the unique characteristics of the Faraday cup 112 can be performed based on the plurality of data. Note that, not only for measurement for calibration, but also when measuring a one-dimensional distribution (line distribution) of beam intensity, the beam intensity measurement unit 110 may be moved only in a certain direction as described above. The measurement pitch in that case is free. The measurement is not limited to the stepwise movement, and the measurement may be performed at an arbitrary position while continuously moving. In any case, since the beam intensity measurement unit 110 can be moved and measured, measurement points can be set and measured at a pitch smaller than the array pitch of the Faraday cups 112.
[0097]
In the above embodiment, the beam intensity measurement unit 110 is moved and measured to acquire each data of the reference Faraday and the Faraday to be calibrated (basic data for calibration). Is not necessarily limited to such a method.
[0098]
For example, as shown in FIG. 11A, a beam intensity measurement unit 110 having a configuration in which a plurality of Faraday cups 113 (9 in the figure, 113a to 113i) are arranged may be used. What is necessary is just to consider that the aggregate | assembly of each micro Faraday cup 113a-113i respond | corresponds to each (112a-112d) of the Faraday cup 112 shown in the said embodiment. At the time of calibration, an assembly of minute Faraday cups 113 is arranged at a position corresponding to the measurement point shown in the above embodiment, and any one of the minute Faraday cups 113 (for example, 113a) at almost the same measurement point is used as a reference Faraday cup. Then, the other minute Faraday cups 113 (for example, 113b to 113i) are calibrated.
[0099]
By doing this, the data of the same measurement point can be acquired by a plurality of minute Faraday cups 113 without moving the Faraday base 114, and therefore the influence of the unique characteristics of the Faraday cup 113 is removed based on the plurality of data. Can be calibrated.
[0100]
When measuring the beam intensity distribution, if the distribution is specified using, for example, an average value or a median value (median value) based on the data values of the Faraday cups 113a to 113i at substantially the same measurement point, the measurement accuracy Increases further. In addition, when a failure occurs in any of the Faraday cups 113a to 113i, there is an advantage that there is no inconvenience in calibration and beam intensity distribution measurement even if the failure cup is not used.
[0101]
Further, as shown in FIG. 11B, different Faraday bases 114a and 114b are provided rotatably around the rotation shaft 114c, and the Faraday cups 112 are arranged at a predetermined pitch on the Faraday bases 114a and 114b. The beam intensity measuring unit 110 having the configuration may be used. In this case, at the time of calibration, the Faraday bases 114a and 114b are rotated to substantially replace the Faraday cup 112 with respect to the same measurement point. On the other hand, when measuring the beam intensity distribution, the Faraday cups 112a to 112d disposed on either one of the Faraday bases 114a and 114b are used.
[0102]
By doing so, data of the same measurement point can be acquired by a plurality of minute Faraday cups 112, and therefore, calibration that removes the influence of the unique characteristics of the Faraday cup 112 can be performed based on the plurality of data. In addition, when a failure occurs in any one of the Faraday cups 112a and 114b, the Faraday bases 114a and 114b can be switched and measured.
[0103]
All of the above explanations consider not only beam intensity distribution measurement but also acquisition of basic data for calibration to eliminate the intrinsic characteristics of the Faraday cup, but it is not always necessary to consider the calibration mechanism. Not required. In this case, it is only necessary to have a structure for finely setting the measurement points by finely moving the Faraday cup, and a structure for acquiring data of the same measurement point with different Faraday cups is not required.
[0104]
For example, in the above embodiment, the beam intensity measuring unit 110 having a structure in which a plurality of Faraday cups 112 are arranged on the Faraday base 114 in a single row or a plurality of rows at a predetermined pitch is one-dimensional, two-dimensional, or three-dimensional. Furthermore, a charged beam intensity distribution measuring device (beam) that can measure the charged particle beam intensity distribution in a one-dimensional, two-dimensional, or three-dimensional form by adopting a structure that can move with respect to almost the entire surface of the beam irradiation region. However, the present invention is not limited to this, and the beam intensity measuring unit 110 may be formed of only a single Faraday cup 112.
[0105]
In this case, the beam intensity distribution can also be measured by moving (scanning) the beam intensity measuring unit 110 in one, two, or three dimensions. Since measurement is performed using only the single Faraday cup 112, it may be considered that the measured beam intensity distribution is not affected by variation due to the inherent characteristics.
[0106]
For example, as shown in FIG. 12A, a modification example of the first embodiment including the two-axis movable stage 120 of the XY stage can be configured. As shown in FIG. 12A, the XY stage is used as shown in FIG. 12A in the same manner as when the beam intensity measuring mechanism 100 using the two-axis movable stage 120 is configured using a plurality of Faraday cups 112. If the beam intensity measuring mechanism 100 is configured, the cost can be reduced, and the advantage that the number of maintenance times can be reduced can be obtained.
[0107]
Further, as shown in FIG. 12B, a modification example of the second embodiment including the arm mechanism 150 can be configured. Not limited to these modifications, the beam intensity measurement mechanism 100 of the third embodiment can be similarly modified to a structure using only a single Faraday cup 112.
[0108]
As a combination of the first to third embodiments using a plurality of Faraday cups 112 and a modification using a single Faraday cup 112, for example, initially, a plurality of Faraday cups 112 are used. In addition to performing measurement, if any Faraday cup 112 fails, measurement can be performed by substituting another Faraday cup 112 for use until the last one fails. can get.
[0109]
In the above embodiment, the mechanism for calibrating the intrinsic characteristic of the Faraday cup 112 using the mechanism for moving the beam intensity measuring unit 110 has been described. However, attention should be paid only to the point of calibrating the intrinsic characteristic of the Faraday cup 112. For example, apart from the mechanism for arranging a plurality of Faraday cups 112 at the same measurement point, the data calibration mechanism described in the above embodiment can be applied to an apparatus in which the Faraday cup 112 is fixedly arranged.
[0110]
For example, a reference Faraday cup 112 dedicated for calibration is prepared separately from the Faraday cup 112 for measuring the beam intensity distribution, and the position of the Faraday cup 112 fixedly arranged using a predetermined moving means is substantially the same. You may move to a position and measure. By doing so, it is possible to correct so as to cancel out the deviation between the measurement result obtained by the reference Faraday cup 112 and the measurement result of the Faraday cup 112 fixedly arranged.
[0111]
【The invention's effect】
  As described above, according to the present invention,The beam intensity distribution can be measured without fixing the measurement point at the arrangement position of the probe, and the beam intensity distribution can be measured without being affected by the inherent characteristic of the probe.ThisAccurate distribution measurement,When a beam is implanted with an ion implantation apparatus or the like, the intensity of the implanted beam can be accurately controlled, and the uniformity of implantation can be improved.
[0112]
  Also,There is an advantage that even if a failure occurs in any of the measuring elements, the measurement is not adversely affected.
[Brief description of the drawings]
FIG. 1 is a side view schematically showing a configuration example of an ion implantation apparatus to which an embodiment of a semiconductor manufacturing apparatus according to the present invention is applied.
FIG. 2 is a diagram showing a first embodiment of a beam intensity measuring mechanism.
FIG. 3 is a diagram showing an overall outline of a second embodiment of a beam intensity measuring mechanism.
FIG. 4 is a diagram showing an overall outline of a third embodiment of a beam intensity measuring mechanism.
FIG. 5 is a functional block diagram showing a configuration example of a calculation processing unit that forms a functional part for calculating a calibration value of a beam intensity and a functional part for calculating a true charged particle beam intensity distribution;
FIG. 6 is a diagram for explaining a first example of a process for performing charged particle beam intensity measurement;
FIG. 7 is a diagram for explaining a second example of processing for performing charged particle beam intensity measurement;
FIG. 8 is a diagram for explaining a third example of processing for performing charged particle beam intensity measurement;
FIG. 9 is a diagram for explaining an advantage of moving the beam intensity measuring unit while tilting it with respect to both the X axis and the Y axis.
FIG. 10 is a diagram for explaining a mechanism for calibrating intrinsic characteristics by moving and measuring a beam intensity measuring unit only one-dimensionally.
FIG. 11 is a diagram illustrating a modification of the beam intensity measurement unit for realizing the function of calibrating the intrinsic characteristics of the Faraday cup.
FIG. 12 is a diagram showing an example of a beam intensity measurement mechanism when a beam intensity measurement unit is formed with only a single Faraday cup.
FIG. 13 is a diagram illustrating a configuration example of a conventional beam intensity measurement unit.
14 is a diagram for explaining a problem when measurement is performed using the beam intensity measurement unit illustrated in FIG. 13;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Ion implantation apparatus, 2 ... Shield box, 3 ... High voltage terminal, 5 ... Accelerating tube, 6 ... Beam line part, 8 ... End station part, 32 ... Ion source, 34 ... Mass separator, 36 ... Beam blocker , 82 ... Wafer holding mechanism, 100 ... Beam intensity measuring mechanism, 101 ... Mask placement mechanism part, 102 ... Operating mechanism part, 104 ... Stage, 110 ... Beam intensity measuring part, 112, 113 ... Faraday cup, 114 ... Faraday base, DESCRIPTION OF SYMBOLS 116 ... Signal output part, 120 ... Two-axis movable stage, 150 ... Arm mechanism, 156, 157, 158 ... Rotating axis, 170 ... One-axis movable stage, 186 ... Rotating axis, 200 ... Arithmetic processing part, 202 ... Measurement position control , 204... A / D converter, 206... Calibration value calculator, 208. Intensity distribution calculator, M. Stencil mask, W.

Claims (7)

Using a plurality of measuring elements for measuring the intensity of charged particles injected into the semiconductor substrate, each of the charged particles is measured at the same measurement point ,
Each measurement obtained by measurement using any one of the plurality of measuring elements as a reference measuring element and using the remaining one of the plurality of measuring elements at the same measuring point. the results, and corrected so as to cancel the deviation between the measurement results obtained by the measuring element of the reference, both measure the intensity distribution before Symbol charged particles by using the measurement result after the correction,
When a failure occurs in any of the plurality of measuring elements, the measurement is performed without using the measuring element.
Load conductive particle intensity distribution measurement method. Using a plurality of measuring element for measuring the intensity of charged particles are injected into the semiconductor substrate, and strength measurement unit you respectively measured intensity of the charged particle at the same measurement point,
Each measurement obtained by measurement using any one of the plurality of measuring elements as a reference measuring element and using the remaining one of the plurality of measuring elements at the same measuring point. A calibration value calculation unit that corrects the result so as to cancel out the deviation from the measurement result obtained by the reference stylus,
An intensity distribution calculator that measures the intensity distribution of the charged particles using the measurement result after correction by the calibration value calculator ;
With
The intensity measuring unit and the intensity distribution calculating unit perform the measurement without using the measuring element when a failure occurs in any of the plurality of measuring elements.
Load conductive particle intensity distribution measuring apparatus.   A moving mechanism for moving the plurality of measuring elements;
  When the failure occurs in any of the plurality of measuring elements, the strength measurement unit and the intensity distribution calculation unit do not use the failure part, and other than the failure part by the moving mechanism part. Measure the intensity distribution by moving the normal probe.
  The charged particle intensity distribution measuring apparatus according to claim 2.   At each measurement point corresponding to each of the plurality of measuring elements, an assembly of a plurality of minute measuring elements is arranged,
  The calibration value calculation unit corrects the measurement value for the other of the plurality of minute measuring elements by using any one of the plurality of minute measuring elements at the same measurement point as a reference measuring element. Do
  The charged particle intensity distribution measuring apparatus according to claim 2.   The intensity measuring unit and the intensity distribution calculating unit perform the measurement without using the faulty part when a failure occurs in any of the plurality of minute measuring elements.
  The charged particle intensity distribution measuring apparatus according to claim 4.   A plurality of base members each having the plurality of measuring elements disposed thereon, and a rotation mechanism unit that rotatably supports the rotation axis as a fulcrum;
  The intensity measurement unit rotates the plurality of base materials by the rotation mechanism unit, and measures the intensity of the charged particles at the same measurement point,
  The intensity distribution calculating unit measures the intensity distribution using the plurality of measuring elements arranged on any one of the plurality of base materials,
  The strength measuring unit and the strength distribution calculating unit may be configured so that when one of the plurality of measuring elements of the plurality of base materials fails, the other of the plurality of base materials is used. Switch to perform the measurement
  The charged particle intensity distribution measuring apparatus according to claim 2. A charged particle intensity distribution measuring device according to any one of claims 2 to 6,
A control unit that controls injection of the charged particles so that a predetermined dose is uniformly obtained on the semiconductor substrate based on the intensity distribution obtained by the intensity distribution calculation unit of the charged particle intensity distribution measuring apparatus. semiconductors manufacturing device provided with and.

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