JP4404195B2 - Whisker suppression method and electronic component manufacturing method - Google Patents
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本発明は、錫又は錫合金皮膜から接圧ウィスカが発生するのを抑制する方法及び接圧ウィスカの発生が抑制された電子部品の製造方法に関する。 The present invention relates to a method for suppressing generation of contact pressure whiskers from a tin or tin alloy film and a method for manufacturing an electronic component in which generation of contact pressure whiskers is suppressed.
錫や錫合金めっき皮膜は、皮膜に内部応力があるとウィスカが発生することが知られており、このウィスカにより回路がショートするなどの問題が発生する。
このため、めっき液の改良を行うなど、従来より、錫、錫合金めっき皮膜の内部応力を低減させる種々の方法が提案されている。しかし、内部応力が低減され、それ自体ウィスカが発生し難い部材であっても、これに外部から応力が加わると、接圧ウィスカが発生する。ここで、接圧とは、例えばコネクター等の電子部品において、コンタクトの挿入部分にフレキシブル基板を嵌合する場合に差し込まれ、接している錫又は錫合金皮膜個所にかかる外部荷重など、錫又は錫合金皮膜に他部材が圧接固定された際に錫又は錫合金皮膜に加えられた外部荷重であり、電子部品の嵌合個所、接点部分などには表面処理としてSn、Sn−Cu、Sn−Ag、Sn−Bi等のめっきが施されてきたが、これら嵌合個所、接点部分などの圧接部位には接圧ウィスカが発生する。
It is known that tin and tin alloy plating films generate whiskers when the film has internal stress, and this whisker causes problems such as short circuit.
For this reason, various methods for reducing the internal stress of tin and tin alloy plating films have been proposed, such as improving the plating solution. However, even if the internal stress is reduced and the member itself is difficult to generate a whisker, a contact pressure whisker is generated when stress is applied to the member from the outside. Here, the contact pressure refers to, for example, an external load applied to a contacted tin or tin alloy film in an electronic component such as a connector when a flexible board is fitted to a contact insertion portion, such as tin or tin. It is an external load applied to tin or tin alloy film when other members are pressure-fixed to the alloy film, and Sn, Sn-Cu, Sn-Ag are applied as surface treatments to fitting parts and contact parts of electronic parts. Although plating of Sn-Bi or the like has been performed, a contact pressure whisker is generated at a pressure contact portion such as a fitting portion or a contact portion.
図1は、一の部材aと他の部材bとの嵌合状態の一例を示すもので、図中cの部分が接圧個所である。
具体的には、図2に示すコネクター1には、コネクターピン2に錫又は錫合金めっきが施される。この場合、図2のようなリード3が差し込まれない状態では、コネクターピン2は、内部応力が緩和されるように加熱処理やめっき液の改良が行われているため、長時間放置してもウィスカは発生しない。しかし、ポリイミド4により互いに接触しないように絶縁隔離されたパターン5を有するリード3がコネクター1に差し込まれた場合、コネクターピン2には外部荷重がかかる。そうすると、コネクターピン2の錫又は錫合金めっき皮膜に内部応力があるのと同じ状態となり、ウィスカ(接圧ウィスカ)が発生する。これにより、リード3のポリイミド4による絶縁が阻害され、パターン5間がショートするおそれが生じる。
FIG. 1 shows an example of a fitting state between one member a and another member b, and a portion c in the figure is a contact pressure portion.
Specifically, the
また、図3に示す水晶発振子においては、容器6の内外表面に錫又は錫合金めっきが施され、この容器6内に水晶発振子7が圧入される。ここで、8は水晶体、9はリード端子、10はリード端子を被覆絶縁保護するシリコーン樹脂製のリード端子カバーである。上記圧入により、図3において、Xの部分の容器6めっき皮膜に外部荷重が加わる。発振子には、上述したように、リードのショート防止の目的でリード端子カバーが備えられているが、容器6の錫又は錫合金めっき皮膜から接圧ウィスカWがリード端子カバー10内を成長し、リード端子9と接触することでショートするおそれがある。
しかしながら、従来、接圧ウィスカ発生を抑制する有効な方法は、見出されていないのが現状である。
In the crystal oscillator shown in FIG. 3, tin or tin alloy plating is applied to the inner and outer surfaces of the
However, the present condition is that the effective method which suppresses generation | occurrence | production of a contact pressure whisker is not discovered conventionally.
本発明は、上記事情に鑑みなされたもので、錫又は錫合金皮膜からの接圧ウィスカの発生を抑制する方法、及びかかる接圧ウィスカの発生が抑制された電子部品を製造する方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and provides a method for suppressing the generation of contact pressure whiskers from a tin or tin alloy film, and a method for manufacturing an electronic component in which the generation of such contact pressure whiskers is suppressed. For the purpose.
本発明者らは、上記目的を達成するため鋭意検討を行った結果、他部材が圧接固定されることにより、接圧ウィスカの発生のおそれがある部分に同等以上の外部荷重を加えた状態で加熱処理することにより、接圧ウィスカの発生を効果的に抑制し得ることを知見し、本発明をなすに至った。 As a result of intensive studies to achieve the above-mentioned object, the present inventors have applied an external load equal to or greater than that to the portion where the contact pressure whisker may be generated due to the other members being pressed and fixed. It has been found that the generation of contact pressure whiskers can be effectively suppressed by heat treatment, and the present invention has been made.
従って、本発明は、他部材が圧接固定される面に錫又は錫合金皮膜が形成された一の部材に対し、この一の部材の少なくとも上記他部材が圧接固定される部分に、その圧接力である3〜5kg/mm 2 の荷重以上の外部荷重を加えた状態で50〜400℃で3時間〜1分間加熱処理することを特徴とする一の部材の上記錫又は錫合金皮膜からの接圧ウィスカの発生を抑制する方法を提供する。また、本発明は、導電部が絶縁部で隔離された第一の電子部材を、この第一の電子部材が圧着固定される面に錫又は錫合金皮膜が形成された第二の電子部材に圧着固定する電子部品の製造方法において、上記両電子部材を3〜5kg/mm 2 の圧接力で圧着固定後、50〜400℃で3時間〜1分間加熱処理を施すか、あるいは上記両電子部材の圧着固定前に、上記第二の電子部材の少なくとも第一の電子部材が圧接固定される部分に、コネクター使用時の嵌合個所の圧接力である3〜5kg/mm 2 の荷重以上の外部荷重を加えた状態で50〜400℃で3時間〜1分間加熱処理を施し、その後上記両電子部材を圧着固定することを特徴とする上記錫又は錫合金皮膜からの接圧ウィスカの発生が抑制された電子部品の製造方法を提供する。なお、上記加熱処理は150〜400℃で3時間〜10分間とすることが好ましい。 Therefore, according to the present invention, with respect to one member in which tin or a tin alloy film is formed on the surface on which the other member is pressure-fixed, the pressure-contact force is applied to at least a portion of the one member where the other member is pressure-fixed in it from the tin or tin alloy film of one element, characterized in that 5 0-400 heat treatment for 3 hours to 1 minute at ℃ while applying a more external load load of 3-5 kg / mm 2 A method for suppressing the occurrence of contact pressure whiskers is provided. In addition, the present invention provides a first electronic member having a conductive portion isolated by an insulating portion as a second electronic member in which a tin or tin alloy film is formed on a surface to which the first electronic member is pressure-bonded. In the method of manufacturing an electronic component to be fixed by crimping, both the electronic members are crimped and fixed with a pressing force of 3 to 5 kg / mm 2 and then subjected to heat treatment at 50 to 400 ° C. for 3 hours to 1 minute , or both the electronic members Before the crimping and fixing, at least the first electronic member of the second electronic member is pressed and fixed to the external portion with a load of 3 to 5 kg / mm 2 or more which is the pressing force of the fitting portion when using the connector Heat treatment is performed at 50 to 400 ° C. for 3 hours to 1 minute in a state where a load is applied, and then both the electronic members are crimped and fixed, and the generation of contact pressure whiskers from the tin or tin alloy film is suppressed. A method for manufacturing a manufactured electronic component is provided. The heat treatment is preferably performed at 150 to 400 ° C. for 3 hours to 10 minutes.
本発明によれば、錫又は錫合金皮膜に外部荷重が加わっても、ウィスカの発生が抑制される。 According to the present invention, even when an external load is applied to the tin or tin alloy film, the generation of whiskers is suppressed.
本発明の接圧ウィスカの抑制方法は、他部材が圧接固定される面に錫又は錫合金皮膜が形成された一の部材に対し、この一の部材の少なくとも上記他部材が圧接固定される部分に外部荷重を加えた状態で加熱処理するものである。 The method for suppressing a contact pressure whisker according to the present invention is a portion in which at least the other member of the one member is pressed and fixed to one member having a tin or tin alloy film formed on the surface on which the other member is pressed and fixed. Heat treatment is performed with an external load applied.
この場合、錫又は錫合金皮膜は、通常、めっき法にて形成される。めっきは電気めっき法でも無電解めっき法でもよく、また真空蒸着等の気相めっき法も採用し得る。皮膜厚さは、部材の種類、使用目的等により適宜選定されるが、通常0.5〜15μm、好ましくは1.5〜6μmである。錫合金皮膜としては、Sn−Cu、Sn−Ag、Sn−Bi等が挙げられるが、錫合金中の錫含有量は50質量%以上、より好ましくは60質量%以上、更に好ましくは70質量%以上であることが好ましい。 In this case, the tin or tin alloy film is usually formed by a plating method. The plating may be an electroplating method or an electroless plating method, and a vapor phase plating method such as vacuum deposition may be employed. The film thickness is appropriately selected depending on the type of member, purpose of use, etc., but is usually 0.5 to 15 μm, preferably 1.5 to 6 μm. Examples of the tin alloy film include Sn—Cu, Sn—Ag, and Sn—Bi. The tin content in the tin alloy is 50% by mass or more, more preferably 60% by mass or more, and further preferably 70% by mass. The above is preferable.
また、一の部材に加える外部荷重は、他部材の圧接固定により加わる荷重以上の荷重であることが好ましく、付与される荷重が圧接固定荷重より小さいと、接圧ウィスカが発生するおそれがある。一の部材に外部荷重を加える方法としては、一の部材に他部材を圧接固定し、部品を得た状態で加熱処理を施す方法でもよく、一の部材に対し、別の部材を上記一の部材の少なくとも上記他部材が圧接固定される部分に該圧接固定荷重以上の荷重で圧接させ、この状態で加熱処理を行う方法を採用し得る。 Further, the external load applied to one member is preferably a load that is equal to or greater than the load applied by pressure-contact fixing of the other member. If the applied load is smaller than the pressure-fixing load, a contact pressure whisker may be generated. As a method of applying an external load to one member, another member may be press-fixed to one member, and a heat treatment may be performed in a state where a component is obtained. It is possible to employ a method in which at least a portion of the member where the other member is pressure-fixed is pressed with a load equal to or greater than the pressure-fixing load and heat treatment is performed in this state.
なお、上記一の部材に加えられる他部材の圧接力は、コネクター使用時の嵌合個所では3〜5kg/mm2である。また、この圧接力(荷重)以上の荷重の上限は、適宜選定され、一の部材が機械的に破壊しない限り可能である。 Incidentally, the contact pressure of the other member applied to members of the one, in the fitting point of time of connector used Ru 3-5 kg / mm 2 der. Further, the upper limit of the load equal to or greater than the pressure contact force (load) is selected as appropriate, and is possible as long as one member is not mechanically broken.
上記加熱処理条件は、50〜400℃で3時間〜1分間の加熱時間である。このとき、低い温度には長い時間、高い温度には短い時間で加熱処理を行うことが好ましい。上記範囲外の加熱処理条件下では、特に低温、低時間では、接圧ウィスカの発生のおそれがある。
The heat treatment conditions, Ru heating time der 3
なお、上記一の部材と他の部材との組み合わせとしては、図2,3に示したようなコネクター(コネクターピン)とリードフレーム、容器と水晶発振子等が挙げられるが、本発明はこれに限定されるものではない。 The combination of the one member and the other member includes a connector (connector pin) and a lead frame as shown in FIGS. 2 and 3, a container and a crystal oscillator, etc. It is not limited.
上記組み合わせは、電子部材の組み合わせであるが、このような電子部材相互を組み合わせて電子部品を製造する場合は、上述したように、導電部が絶縁部で隔離された第一の電子部材を、この第一の電子部材が圧着固定される面に錫又は錫合金皮膜が形成された第二の電子部材に圧着固定する電子部品を製造する場合、上記両電子部材の圧着固定後、加熱処理を施すか、あるいは上記両電子部材の圧着固定前に、上記第二の電子部材の少なくとも第一の電子部材が圧着固定される部分に、好ましくは第一の電子部材の圧着固定により加わる荷重以上の外部荷重を加えた状態で加熱処理を施し、その後上記両電子部材を圧着固定することが好ましい。
なお、上記圧着固定態様、加熱処理条件は上述した通りである。
The above combination is a combination of electronic members, but when an electronic component is manufactured by combining such electronic members, as described above, the first electronic member in which the conductive portion is isolated by the insulating portion, When manufacturing an electronic component to be crimped and fixed to a second electronic member having a tin or tin alloy film formed on the surface to which the first electronic member is crimped and fixed, heat treatment is performed after the above-mentioned electronic members are crimped and fixed. Or at least a portion of the second electronic member to which the first electronic member is crimped and fixed, preferably more than a load applied by crimping and fixing the first electronic member before the electronic member is crimped and fixed. It is preferable that the heat treatment is performed with an external load applied, and then both the electronic members are crimped and fixed.
In addition, the said crimping | fixing fixation aspect and heat processing conditions are as having mentioned above.
以下、実施例により本発明を具体的に説明するが、本発明は下記の実施例に制限されるものではない。
なお、下記の例で、接圧ウィスカの発生測定方法としては、下記接圧クリップ方法を用いた。
EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, this invention is not restrict | limited to the following Example.
In the following examples, the following contact pressure clip method was used as a method for measuring the generation of contact pressure whiskers.
接圧クリップ方法
図4に示す目玉クリップ11(65mm幅)の挟み口12の内面片側に両面接着テープを貼り、この上に直径1mmのステンレススチール球(SUS球)13を3個互いにほぼ等間隔ずつ並列させた状態で接着すると共に、0.3mm厚さ×15mm幅×20mm長さの大きさのNi−Fe(42アロイ)合金板の片面にSn−Cu合金電気めっき皮膜(Cu含量2.0wt%)を膜厚5.7μmで形成した試料14を、そのめっき皮膜が中央のSUS球13に接触するように挟み、この載荷状態で一定期間(1〜10日間)経過した後に試料を外し、走査型電子顕微鏡(SEM)によってウィスカを観察し、SEM像から接圧ウィスカをカウントし、ウィスカ発生数の結果を定量的にデータ化した。なお、この目玉クリップ方式によれば、短期間(1〜3日間)で接圧ウィスカの発生状態を調べることができるものである。
Pressure contact clip method A double-sided adhesive tape is applied to one side of the
[実施例1、比較例1]
0.3mm厚さ×15mm幅×20mm長さのNi−Fe(42アロイ)合金板の片面にSn−Cu合金電気めっき皮膜(Cu含量2.0wt%)を膜厚5.7μmで形成した。この試料に上記接圧クリップ方法で荷重750g(24kg/mm2)(実施例1)で荷重を加えた状態、及び上記接圧クリップ方法を採用せずにそのままの(荷重をかけない)状態(比較例1)で200℃で1時間加熱処理した。実施例1の試料はそのまま目玉クリップから外さずに、また比較例1の試料は加熱後上記接圧クリップ方法で実施例1と同じ接圧状態にし、室温で3日間大気中で放置した後、試料のウィスカ発生の有無を観察した。観察した結果を下記表1に示す。
[Example 1, Comparative Example 1]
An Sn—Cu alloy electroplating film (Cu content 2.0 wt%) was formed to a thickness of 5.7 μm on one side of a 0.3 mm thick × 15 mm wide × 20 mm long Ni—Fe (42 alloy) alloy plate. A state in which a load is applied to this sample with a load of 750 g (24 kg / mm 2 ) (Example 1) by the above-mentioned contact pressure clip method, and a state in which the above-mentioned contact pressure clip method is not employed (no load is applied) ( In Comparative Example 1), heat treatment was performed at 200 ° C. for 1 hour. The sample of Example 1 was not removed from the eyeball clip as it was, and the sample of Comparative Example 1 was heated and brought into the same contact pressure state as in Example 1 by the above-mentioned contact pressure clip method, and left in the atmosphere at room temperature for 3 days. The sample was observed for the occurrence of whiskers. The observation results are shown in Table 1 below.
[実施例2,3、比較例2,3]
0.3mm厚さ×15mm幅×20mm長さのNi−Fe(42アロイ)合金板の片面にSn−Cu合金電気めっき皮膜(Cu含量2.0wt%)を膜厚5.7μmで形成した。この試料に24kg/mm2(実施例2)、26kg/mm2(実施例3)、22kg/mm2(比較例2)で荷重を加えた状態、及び荷重をかけない状態(比較例3)で200℃で1時間加熱処理した。加熱後、一旦それぞれ荷重を加えず、1日間室温で大気中に放置した。この1日間放置したそれぞれの試料を上記接圧クリップ方式で荷重750g(24kg/mm2)の接圧力(圧接力)を加えた状態で、室温で3日間大気中で放置した後、試料のウィスカ発生の有無を観察した。観察した結果を下記表2に示す。
[Examples 2 and 3, Comparative Examples 2 and 3]
An Sn—Cu alloy electroplating film (Cu content 2.0 wt%) was formed to a thickness of 5.7 μm on one side of a 0.3 mm thick × 15 mm wide × 20 mm long Ni—Fe (42 alloy) alloy plate. A state in which a load was applied to this sample at 24 kg / mm 2 (Example 2), 26 kg / mm 2 (Example 3), and 22 kg / mm 2 (Comparative Example 2), and a state in which no load was applied (Comparative Example 3) And heat-treated at 200 ° C. for 1 hour. After heating, each load was not applied once and left in the atmosphere at room temperature for 1 day. Each sample left for 1 day was allowed to stand in the atmosphere for 3 days at room temperature with a contact pressure (pressure contact force) of 750 g (24 kg / mm 2 ) applied by the contact pressure clip method. The presence or absence of occurrence was observed. The observation results are shown in Table 2 below.
[実施例4]
上記接圧クリップ方法において、試料を挟んだときの試料に与える接圧力(圧接力)は荷重750g(24kg/mm2)であり、試料圧接状態で150℃において、所定時間加熱処理後、同じく荷重750g(24kg/mm2)の接圧状態で3日間室温に放置し、ウィスカの状態を調べた。加熱処理時間とウィスカ発生個数との関係を示す結果を図5に示す。図5から、150℃で加熱処理する場合、処理時間を長くすることで、接圧状態であってもウィスカが発生しないことがわかる。
[Example 4]
In the above contact pressure clip method, the contact pressure (pressure contact force) applied to the sample when the sample is sandwiched is a load of 750 g (24 kg / mm 2 ). The whisker state was examined by leaving it at room temperature for 3 days under a contact pressure of 750 g (24 kg / mm 2 ). The results showing the relationship between the heat treatment time and the number of whiskers generated are shown in FIG. FIG. 5 shows that when heat treatment is performed at 150 ° C., the whisker is not generated even in the contact pressure state by increasing the treatment time.
[実施例5]
上記接圧クリップ方法において、試料を挟んだときの試料に与える接圧力(圧接力)は荷重750g(24kg/mm2)であり、試料圧接状態で所定温度において1時間加熱処理後、同じく荷重750g(24kg/mm2)の接圧状態で3日間室温に放置し、ウィスカの状態を調べた。加熱処理温度とウィスカ発生個数との関係を示す結果を図6に示す。実施例5では、図6のように、1時間の加熱処理を行う場合、加熱温度が200℃であれば接圧状態であってもウィスカが発生しないことがわかる。
[Example 5]
In the above contact pressure clip method, the contact pressure (pressure contact force) applied to the sample when the sample is sandwiched is a load of 750 g (24 kg / mm 2 ). After heat treatment at a predetermined temperature for 1 hour in the sample pressure contact state, the load is also 750 g. The whiskers were examined by leaving them at room temperature for 3 days under a contact pressure of (24 kg / mm 2 ). The results showing the relationship between the heat treatment temperature and the number of whiskers generated are shown in FIG. In Example 5, when performing the heat processing for 1 hour like FIG. 6, if a heating temperature is 200 degreeC, even if it is a contact pressure state, it turns out that a whisker does not generate | occur | produce.
1 コネクター
2 コネクターピン
3 リード
4 ポリイミド
5 パターン
a、b 部材
c 接圧個所
W 接圧ウィスカ
1
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JP2005154835A JP2005154835A (en) | 2005-06-16 |
JP4404195B2 true JP4404195B2 (en) | 2010-01-27 |
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JP4817095B2 (en) | 2005-10-03 | 2011-11-16 | 上村工業株式会社 | Whisker suppression surface treatment method |
CN101051535B (en) * | 2006-04-06 | 2012-09-19 | 日立电线株式会社 | Wiring conductor, method for fabricating same, terminal connecting assembly, and pb-free solder alloy |
JP7226210B2 (en) * | 2019-09-19 | 2023-02-21 | 株式会社オートネットワーク技術研究所 | Pin terminals, connectors, wire harnesses with connectors, and control units |
JP7226209B2 (en) * | 2019-09-19 | 2023-02-21 | 株式会社オートネットワーク技術研究所 | Pin terminals, connectors, wire harnesses with connectors, and control units |
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