JP4401688B2 - 発光装置およびその作製方法、並びに電子機器 - Google Patents

発光装置およびその作製方法、並びに電子機器 Download PDF

Info

Publication number
JP4401688B2
JP4401688B2 JP2003162686A JP2003162686A JP4401688B2 JP 4401688 B2 JP4401688 B2 JP 4401688B2 JP 2003162686 A JP2003162686 A JP 2003162686A JP 2003162686 A JP2003162686 A JP 2003162686A JP 4401688 B2 JP4401688 B2 JP 4401688B2
Authority
JP
Japan
Prior art keywords
light
electrode
film
emitting device
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003162686A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004063461A (ja
JP2004063461A5 (enExample
Inventor
舜平 山崎
剛司 野田
欣成 檜垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003162686A priority Critical patent/JP4401688B2/ja
Publication of JP2004063461A publication Critical patent/JP2004063461A/ja
Publication of JP2004063461A5 publication Critical patent/JP2004063461A5/ja
Application granted granted Critical
Publication of JP4401688B2 publication Critical patent/JP4401688B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
JP2003162686A 2002-06-07 2003-06-06 発光装置およびその作製方法、並びに電子機器 Expired - Fee Related JP4401688B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003162686A JP4401688B2 (ja) 2002-06-07 2003-06-06 発光装置およびその作製方法、並びに電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002167758 2002-06-07
JP2003162686A JP4401688B2 (ja) 2002-06-07 2003-06-06 発光装置およびその作製方法、並びに電子機器

Publications (3)

Publication Number Publication Date
JP2004063461A JP2004063461A (ja) 2004-02-26
JP2004063461A5 JP2004063461A5 (enExample) 2006-07-13
JP4401688B2 true JP4401688B2 (ja) 2010-01-20

Family

ID=31949456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003162686A Expired - Fee Related JP4401688B2 (ja) 2002-06-07 2003-06-06 発光装置およびその作製方法、並びに電子機器

Country Status (1)

Country Link
JP (1) JP4401688B2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4679187B2 (ja) * 2004-03-26 2011-04-27 株式会社半導体エネルギー研究所 発光装置の作製方法
US7423373B2 (en) 2004-03-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2005283922A (ja) * 2004-03-29 2005-10-13 Tdk Corp 画像表示装置
JP2005285395A (ja) * 2004-03-29 2005-10-13 Fujitsu Display Technologies Corp 配線構造並びにそれを備えた表示装置用基板及び表示装置
US8350466B2 (en) * 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP5170964B2 (ja) * 2005-02-18 2013-03-27 株式会社半導体エネルギー研究所 発光装置の作製方法
TWI475667B (zh) 2005-03-28 2015-03-01 半導體能源研究所股份有限公司 記憶裝置和其製造方法
JP4984415B2 (ja) * 2005-03-30 2012-07-25 セイコーエプソン株式会社 発光装置及びその製造方法、並びに電子機器
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP5425372B2 (ja) * 2007-04-27 2014-02-26 エルジー ディスプレイ カンパニー リミテッド 有機ｅｌ素子、およびｅｌ表示装置
JP4670875B2 (ja) 2008-02-13 2011-04-13 セイコーエプソン株式会社 有機ｅｌ装置
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5623107B2 (ja) * 2009-04-22 2014-11-12 キヤノン株式会社 半導体装置
JP5471774B2 (ja) 2010-04-27 2014-04-16 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、電子機器
KR101797095B1 (ko) 2010-09-29 2017-12-13 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP4962630B2 (ja) * 2011-01-20 2012-06-27 セイコーエプソン株式会社 有機ｅｌ装置
WO2013047622A1 (ja) * 2011-09-30 2013-04-04 シャープ株式会社 表示装置及び表示装置の製造方法
JP6247855B2 (ja) * 2013-07-26 2017-12-13 株式会社ジャパンディスプレイ 発光素子表示装置
CN104576705B (zh) * 2015-01-27 2018-03-30 京东方科技集团股份有限公司 一种阵列基板及制作方法、显示装置
JP6588299B2 (ja) * 2015-10-21 2019-10-09 株式会社ジャパンディスプレイ 表示装置
JP6907008B2 (ja) * 2017-04-17 2021-07-21 キヤノン株式会社 有機発光装置、有機発光装置の製造方法、及び撮像装置
FR3070094B1 (fr) * 2017-08-11 2019-09-06 Isorg Systeme d'affichage comprenant un capteur d'images
KR102560100B1 (ko) * 2018-03-08 2023-07-26 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102782277B1 (ko) * 2019-12-27 2025-03-17 엘지디스플레이 주식회사 표시 패널 및 이를 포함한 헤드 장착형 표시 장치
KR20220080923A (ko) * 2020-12-08 2022-06-15 엘지디스플레이 주식회사 전계 발광 표시장치
TW202327140A (zh) * 2021-11-29 2023-07-01 日商索尼半導體解決方案公司 半導體裝置及顯示裝置
WO2025173549A1 (ja) * 2024-02-15 2025-08-21 ソニーセミコンダクタソリューションズ株式会社 発光装置及び電子機器

Also Published As

Publication number Publication date
JP2004063461A (ja) 2004-02-26

Similar Documents

Publication Publication Date Title
JP4401688B2 (ja) 発光装置およびその作製方法、並びに電子機器
US9166202B2 (en) Light emitting device and manufacturing method thereof
US9853098B2 (en) Light emitting device and manufacturing method of the same
JP4216008B2 (ja) 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
JP5106622B2 (ja) 発光装置及び光源装置
US9978811B2 (en) Light emitting device and method of manufacturing the same
JP4373086B2 (ja) 発光装置
JP4683825B2 (ja) 半導体装置およびその作製方法
JP4156431B2 (ja) 発光装置およびその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060525

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060525

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090708

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091027

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091028

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121106

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121106

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121106

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131106

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees