JP4401389B2 - 白色光レーザ - Google Patents
白色光レーザ Download PDFInfo
- Publication number
- JP4401389B2 JP4401389B2 JP2006532462A JP2006532462A JP4401389B2 JP 4401389 B2 JP4401389 B2 JP 4401389B2 JP 2006532462 A JP2006532462 A JP 2006532462A JP 2006532462 A JP2006532462 A JP 2006532462A JP 4401389 B2 JP4401389 B2 JP 4401389B2
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- JP
- Japan
- Prior art keywords
- laser
- light
- organic
- substrate
- white
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- POXIZPBFFUKMEQ-UHFFFAOYSA-N 2-cyanoethenylideneazanide Chemical group [N-]=C=[C+]C#N POXIZPBFFUKMEQ-UHFFFAOYSA-N 0.000 description 1
- VIZUPBYFLORCRA-UHFFFAOYSA-N 9,10-dinaphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=C(C=CC=C2)C2=C1 VIZUPBYFLORCRA-UHFFFAOYSA-N 0.000 description 1
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/445,980 US6807211B1 (en) | 2003-05-27 | 2003-05-27 | White-light laser |
| PCT/US2004/012759 WO2004107512A1 (en) | 2003-05-27 | 2004-04-26 | White-light laser |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007500453A JP2007500453A (ja) | 2007-01-11 |
| JP2007500453A5 JP2007500453A5 (enExample) | 2007-04-19 |
| JP4401389B2 true JP4401389B2 (ja) | 2010-01-20 |
Family
ID=33131552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006532462A Expired - Fee Related JP4401389B2 (ja) | 2003-05-27 | 2004-04-26 | 白色光レーザ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6807211B1 (enExample) |
| EP (1) | EP1627453B1 (enExample) |
| JP (1) | JP4401389B2 (enExample) |
| DE (1) | DE602004010392T2 (enExample) |
| TW (1) | TW200509487A (enExample) |
| WO (1) | WO2004107512A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939012B2 (en) * | 2003-06-02 | 2005-09-06 | Eastman Kodak Company | Laser image projector |
| US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
| US7848379B2 (en) * | 2006-01-25 | 2010-12-07 | Sensor Electronic Technology, Inc. | LED-based optical pumping for laser light generation |
| JP5000914B2 (ja) * | 2006-03-30 | 2012-08-15 | 日東光学株式会社 | 映像プロジェクション装置 |
| DE102006039083A1 (de) * | 2006-08-17 | 2008-02-21 | Carl Zeiss Microimaging Gmbh | Durchstimmbare Beleuchtungsquelle |
| DE102007025092A1 (de) | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
| EP2710695A4 (en) | 2011-05-16 | 2015-07-15 | VerLASE TECHNOLOGIES LLC | THROUGH RESONATORS REINFORCED OPTOELECTRONIC DEVICES AND MANUFACTURING METHOD THEREFOR |
| US9535273B2 (en) * | 2011-07-21 | 2017-01-03 | Photon Dynamics, Inc. | Apparatus for viewing through optical thin film color filters and their overlaps |
| JP6681694B2 (ja) * | 2015-10-30 | 2020-04-15 | スタンレー電気株式会社 | 面発光レーザ素子 |
| JP2019526937A (ja) | 2016-09-02 | 2019-09-19 | 国立大学法人九州大学 | 連続波有機薄膜分布帰還型レーザ及び電気駆動有機半導体レーザダイオード |
| TWI846301B (zh) * | 2016-09-02 | 2024-06-21 | 國立大學法人九州大學 | 有機雷射裝置之模擬模型化方法、用於執行模擬模型化方法之程式及有機雷射裝置之製造方法 |
| CN109923468A (zh) * | 2016-12-05 | 2019-06-21 | 歌尔股份有限公司 | 微激光二极管显示装置和电子设备 |
| US10971890B2 (en) * | 2016-12-05 | 2021-04-06 | Goertek, Inc. | Micro laser diode transfer method and manufacturing method |
| EP3580821A4 (en) | 2017-02-07 | 2021-01-13 | Kyushu University, National University Corporation | Current-injection organic semiconductor laser diode, method for producing same and program |
| EP3611234B1 (en) * | 2017-05-19 | 2023-06-21 | Institute of Chemistry, Chinese Academy of Science | Ink for producing laser light sources |
| EP4402404B1 (en) | 2021-09-14 | 2025-03-26 | Signify Holding B.V. | Color control using a high frequency wavelength sweeping light source and a phosphor |
| CN118202537B (zh) | 2021-11-09 | 2025-11-14 | 昕诺飞控股有限公司 | 具有可调谐强度分布的模拟连续发射的高频波长扫频激光器 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021845A (en) | 1975-10-16 | 1977-05-03 | Xerox Corporation | Laser for generating white light |
| EP0884914A1 (en) | 1993-02-03 | 1998-12-16 | Nitor | Methods and apparatus for image projection |
| US5428635A (en) | 1994-01-11 | 1995-06-27 | American Biogenetic Sciences, Inc. | Multi-wavelength tunable laser |
| US5418803A (en) | 1994-01-11 | 1995-05-23 | American Biogenetic Sciences, Inc. | White light laser technology |
| JP2596709B2 (ja) * | 1994-04-06 | 1997-04-02 | 都築 省吾 | 半導体レーザ素子を用いた照明用光源装置 |
| JPH09152640A (ja) | 1995-11-30 | 1997-06-10 | Nidek Co Ltd | レ−ザ装置 |
| US5708280A (en) * | 1996-06-21 | 1998-01-13 | Motorola | Integrated electro-optical package and method of fabrication |
| US6160828A (en) * | 1997-07-18 | 2000-12-12 | The Trustees Of Princeton University | Organic vertical-cavity surface-emitting laser |
| US6172459B1 (en) * | 1998-07-28 | 2001-01-09 | Eastman Kodak Company | Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer |
| GB2353400B (en) * | 1999-08-20 | 2004-01-14 | Cambridge Display Tech Ltd | Mutiple-wavelength light emitting device and electronic apparatus |
| US7202506B1 (en) * | 1999-11-19 | 2007-04-10 | Cree, Inc. | Multi element, multi color solid state LED/laser |
| JP2002324674A (ja) * | 2001-02-26 | 2002-11-08 | Seiko Epson Corp | 発光装置、表示装置、ならびに電子機器 |
| US7061584B2 (en) * | 2001-03-19 | 2006-06-13 | Dmetrix, Inc. | Multi-axis projection imaging system |
| US6658037B2 (en) * | 2001-04-11 | 2003-12-02 | Eastman Kodak Company | Incoherent light-emitting device apparatus for driving vertical laser cavity |
| US6724511B2 (en) * | 2001-11-16 | 2004-04-20 | Thin Film Electronics Asa | Matrix-addressable optoelectronic apparatus and electrode means in the same |
| US6947459B2 (en) * | 2002-11-25 | 2005-09-20 | Eastman Kodak Company | Organic vertical cavity laser and imaging system |
-
2003
- 2003-05-27 US US10/445,980 patent/US6807211B1/en not_active Expired - Fee Related
-
2004
- 2004-04-26 JP JP2006532462A patent/JP4401389B2/ja not_active Expired - Fee Related
- 2004-04-26 DE DE602004010392T patent/DE602004010392T2/de not_active Expired - Lifetime
- 2004-04-26 EP EP04750644A patent/EP1627453B1/en not_active Expired - Lifetime
- 2004-04-26 WO PCT/US2004/012759 patent/WO2004107512A1/en not_active Ceased
- 2004-05-26 TW TW093114966A patent/TW200509487A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE602004010392T2 (de) | 2008-10-16 |
| EP1627453A1 (en) | 2006-02-22 |
| EP1627453B1 (en) | 2007-11-28 |
| DE602004010392D1 (de) | 2008-01-10 |
| JP2007500453A (ja) | 2007-01-11 |
| TW200509487A (en) | 2005-03-01 |
| US6807211B1 (en) | 2004-10-19 |
| WO2004107512A1 (en) | 2004-12-09 |
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