JP4381067B2 - 有機電子素子形成用材料の選定方法 - Google Patents
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Description
最初に、スラブ型光導波路を利用したスペクトル測定装置について説明する。スラブ型光導波路分光法は、分子や官能基の振動を捉える赤外分光法ではなく、電子状態やエネルギーバンドギャップに関わる短波長域の界面吸収特性を経時的に測定できる分光法である。そのため、化学結合や化学構造の変化を伴わない膜状態の微妙な変化や相違、ダイナミクスの分析に有効である。
本発明においては、有機電子素子形成用材料を塗布した塗布膜の乾燥過程における経時的なスペクトルデータを、上述したスラブ型光導波路を利用したスペクトル測定装置で測定する。なお、上述した塗布膜は、有機電子素子形成用材料を塗布した塗布膜に対応する。
実施例1では、異なる有機溶媒を採用した場合における有機EL素子形成用材料を使用した。有機EL素子形成用材料として、ADS社製の高分子緑発光材料を用いた。有機溶媒としては、o-キシレン、m-キシレン、p-キシレン、エチルベンゼン、汎用キシレン(o−キシレン:25%、m−キシレン:43%、p−キシレン:18%、エチルベンゼン:14%)を用い、5種類の有機EL素子形成用材料を調製した。なお、高分子緑発光材料は、各溶媒中に1重量%となるように調製した。
蛍光発光分光装置で、発光層の乾燥前後の蛍光発光スペクトルの変化を調べた結果、m−キシレンを溶媒に用いた場合においてのみ、乾燥前後で、スペクトルが殆ど変化せず、また、発光強度も弱いことが分かった。この実施例におけるスペクトル変化は、乾燥過程の秒単位の吸収強度変化率が50%未満であり、不連続点を有さない緩やかなものであった。
光導波路分光測定装置に、加熱可能なユニット(基板全体を加温可能なヒーター)を搭載した装置を用い、実施例1と同様に測定を行った結果、より実生産に近い条件での層の界面状態を調べることができた。具体的には、実施例1のm‐キシレン選択性は、同様に確認されたが、熱印加時での、溶剤が揮発する激しい膜状態変化を観察することができた。
2 光
3 膜(塗布膜)
4 エバネッセント波
5 プリズム
6 反射ミラー
7 紫外可視吸収用CCD分光器
8 蛍光発光用PMT分光器
9 蛍光発光
10 光源
11 入射光側レンズ
12 入射光側プリズム
13 スラブ型光導波路
14 出射光側プリズム
15 出射光側レンズ
16 スラブ型光導波路の位置、角度の制御機構
30 光チョッパー
31 入射光側光ファイバー
32 光ファイバー
33、34 レンズ
41 分光器
42 コンピュータ
43 光電子増倍管
44 増幅器
Claims (3)
- 有機化合物と異なる芳香族系溶媒とを含む複数の有機電子素子形成用材料を調製し、
前記各有機電子素子形成用材料で形成した塗布膜の乾燥過程における経時的な紫外可視吸収スペクトルデータを、スラブ型の光導波路を利用したスペクトル測定装置を用いて300nm〜700nmの紫外可視領域について2秒間隔で測定し、
前記各有機電子素子形成用材料のうち、前記2秒間隔で測定されたスペクトルデータの吸収強度変化率が前記波長領域のいずれの波長においても50%未満となる有機電子素子形成用材料を選定することを特徴とする有機電子素子形成用材料の選定方法。 - 前記経時的な紫外可視吸収スペクトルデータを、熱、光、電場及び磁場から選ばれる1又は2以上の外的要素が印加された条件下で測定する、請求項1に記載の有機電子素子形成用材料の選定方法。
- 前記有機電子素子形成用材料が、水系溶液、非水系溶液又はそれらの組成物である、請求項1又は請求項2に記載の有機電子素子形成用材料の選定方法。
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JP4381067B2 true JP4381067B2 (ja) | 2009-12-09 |
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JP4918798B2 (ja) * | 2006-03-24 | 2012-04-18 | セイコーエプソン株式会社 | 有機el素子の製造方法、有機el素子、及び電子機器 |
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