JP4379113B2 - Resist stripper for substrate process - Google Patents
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Description
本発明は基板工程用レジスト剥離液に関し、特に剥離し難いイオン注入されたレジストの剥離に適したレジスト剥離液に関するものである。 The present invention relates to a resist stripping solution for a substrate process, and particularly to a resist stripping solution suitable for stripping an ion-implanted resist that is difficult to strip.
従来、基板工程（Ｆｒｏｎｔ Ｅｎｄ ｏｆ Ｌｉｎｅ 工程）におけるレジスト剥離は、従来はバッチ式洗浄装置において硫酸と過酸化水素水からなる混合溶液（ＳＰＭ洗浄液）により行われてきた。典型的な使用条件としてはＳＰＭ洗浄液（硫酸：過酸化水素水＝４：１）で１０分間、１００〜１２０℃で処理することにより行われる。 Conventionally, resist removal in a substrate process (Front End of Line process) has been conventionally performed with a mixed solution (SPM cleaning liquid) composed of sulfuric acid and hydrogen peroxide in a batch type cleaning apparatus. As typical use conditions, it is performed by treating at 100 to 120 ° C. for 10 minutes with an SPM cleaning solution (sulfuric acid: hydrogen peroxide solution = 4: 1).
しかしながら、このような条件では、生産性が低く、コスト的にも不利であることからＳＰＭ洗浄液のような濃厚で高温の溶液の代わるものが望まれていた。 However, under such conditions, productivity is low and cost is disadvantageous, so that a substitute for a thick and high temperature solution such as an SPM cleaning solution has been desired.
一方、半導体製造プロセスにおいてはｐ／ｎ接合を形成するため、イオン化したｐ型またはｎ型の不純物元素はＳｉ基板に注入されるが、イオン注入されたレジストは、イオン注入していないレジストよりもはるかにレジスト除去が困難であった。 On the other hand, in the semiconductor manufacturing process, an ionized p-type or n-type impurity element is implanted into the Si substrate in order to form a p / n junction, but the ion-implanted resist is more than the resist that is not ion-implanted. It was much more difficult to remove the resist.
他にもこれまで、過酸化水素と四級アンモニウム塩を含むレジスト剥離液（例えば特許文献１、２）、酸化剤、キレート剤、水溶性フッ素化合物、有機溶媒を含むレジスト剥離液（例えば特許文献３）、過酸化水素、アンモニウムイオン、燐酸及び／又は炭酸イオンを含み、ｐＨ５以上のレジスト剥離液（特許文献４）等が提案されている。しかしいずれのレジスト剥離液も基板工程で使用されるものではなく、さらに剥離し難いイオン注入されたレジストについてのものではなく、またその様な特別の用途についての記載もなかった。 In addition, a resist stripping solution containing hydrogen peroxide and a quaternary ammonium salt (for example, Patent Documents 1 and 2), a resist stripping solution containing an oxidizing agent, a chelating agent, a water-soluble fluorine compound, and an organic solvent (for example, Patent Documents) 3) A resist stripping solution containing hydrogen peroxide, ammonium ions, phosphoric acid and / or carbonate ions and having a pH of 5 or more (Patent Document 4) has been proposed. However, none of the resist stripping solutions are used in the substrate process, and it is not about an ion-implanted resist that is difficult to strip, and there is no description about such a special application.
このように、基板工程において、低温かつ短時間で、イオン注入された剥離性の悪いレジストを剥離できるレジスト剥離液はこれまで知られていなかった。 As described above, a resist stripping solution that can strip off a resist with poor stripping properties that has been ion-implanted in a substrate process at a low temperature in a short time has not been known.
本発明の目的は、比較的低温で短時間に、イオン注入された剥離性の悪いレジストを剥離することである。すなわち、露出している多結晶Ｓｉ（ｐｏｌｙ−Ｓｉ）、Ｓｉ酸化膜（ＳｉＯ２）などにダメージを与えることなく、８０℃以下の温度及び短時間（〜１分）の条件下でイオン注入された剥離性の悪いレジスト及び反射防止膜を除去することのできるレジスト剥離液を提供することにある。 An object of the present invention is to remove a resist having poor releasability implanted with ions at a relatively low temperature in a short time. That is, ions are implanted under conditions of a temperature of 80 ° C. or less and a short time (˜1 minute) without damaging the exposed polycrystalline Si (poly-Si), Si oxide film (SiO 2 ), or the like. Another object of the present invention is to provide a resist remover that can remove a resist having poor peelability and an antireflection film.
本発明者らは、基板工程用のレジスト剥離液（以後レジスト剥離液）について鋭意検討した結果、ある特定濃度のアンモニア、過酸化水素、水を含んでなり、さらに炭酸、フッ酸、有機酸の群から選ばれる少なくともひとつの酸及び／又はその塩の混合溶液ではｐｏｌｙ−Ｓｉ、ＳｉＯ２などにダメージを与えることなく、８０℃以下の温度及び短時間（〜１分）にレジスト及び／又は反射防止膜を、特にひ素又はホウ素をイオン注入されることによって剥離性が悪くなったレジスト及び／又は反射防止膜を除去することができることを見出し、本発明を完成するに至ったものである。 As a result of intensive studies on a resist stripping solution (hereinafter referred to as a resist stripping solution) for the substrate process, the present inventors have included ammonia, hydrogen peroxide, and water at a specific concentration, and carbonic acid, hydrofluoric acid, and organic acids. In a mixed solution of at least one acid selected from the group and / or its salt, resist and / or reflection at a temperature of 80 ° C. or less and for a short time (˜1 minute) without damaging poly-Si, SiO 2, etc. The inventors have found that the resist and / or the antireflective film whose peelability has deteriorated by ion implantation of arsenic or boron can be removed, and the present invention has been completed.
すなわち、本発明は、アンモニアを０．１〜１０重量％、過酸化水素を０．１〜５重量％、炭酸、フッ酸、有機酸の群から選ばれる少なくともひとつの酸及び／又はその塩を０．０５〜２重量％、残りが水からなるレジスト剥離液である。 That is, the present invention comprises at least one acid selected from the group consisting of 0.1 to 10% by weight of ammonia , 0.1 to 5% by weight of hydrogen peroxide, carbonic acid, hydrofluoric acid and organic acid, and / or a salt thereof. A resist stripping solution of 0.05 to 2% by weight, the balance being water .
以下に本発明を詳細に説明する。 The present invention is described in detail below.
本発明におけるレジスト剥離液とは、レジスト及び／又は反射防止膜を基板上に塗布した後、露光、現像し、エッチング、イオン注入などの処理を施し回路を形成した後、残ったレジスト及び／又は反射防止膜を除去するために用いる溶液のことをいう。 The resist stripping solution in the present invention is a resist and / or antireflection film applied on a substrate, then exposed to light, developed, processed by etching, ion implantation, etc. to form a circuit, and then the remaining resist and / or A solution used to remove the antireflection film.
本発明で用いるレジスト、反射防止膜は特に限定するものではないが、例えばヒドロキシスチレン系ポリマー、ノボラック系ポリマー等が挙げられる。 The resist and antireflection film used in the present invention are not particularly limited, and examples thereof include hydroxystyrene polymers and novolak polymers.
本発明では、上記のレジスト及び／又は反射防止膜を基板上に塗布した後、露光、現像し、エッチング、イオン注入などの処理を施し回路を形成した後、本発明のレジスト剥離液で剥離する。 In the present invention, after applying the resist and / or antireflection film on the substrate, exposure, development, etching, ion implantation and the like are performed to form a circuit, followed by peeling with the resist stripping solution of the present invention. .
本発明のレジスト剥離液はその成分としてアンモニア、過酸化水素、水を含んでなるものである。 The resist stripping solution of the present invention comprises ammonia, hydrogen peroxide and water as its components.
本発明のレジスト剥離液に使用するアンモニアは、レジスト及び／又は反射防止膜を剥離除去する作用がある。アンモニアは一般的にアンモニア水として市販されており容易に入手することができるが、ウエハの清浄度を保つため、高純度品を使用するのが好ましい。 Ammonia used in the resist stripping solution of the present invention has an action of stripping and removing the resist and / or the antireflection film. Ammonia is generally commercially available as ammonia water and can be easily obtained, but it is preferable to use a high-purity product in order to maintain the cleanliness of the wafer.
本発明のレジスト剥離液に使用する過酸化水素は酸化剤としてウエハに露出したｐｏｌｙ−Ｓｉ、ＳｉＯ２を保護するために添加する。過酸化水素は無水、水溶液のほかに、尿素や第四級アンモニウム塩などの過酸化水素化物（結晶水における水のように、尿素や第四級アンモニウム塩に過酸化水素が配位したもの）も使用できるが、取り扱いやすさから特に水溶液が好ましい。過酸化水素水は一般的に市販されており容易に入手することができる。 Hydrogen peroxide used in the resist stripping solution of the present invention is added as an oxidizing agent to protect poly-Si and SiO 2 exposed on the wafer. Hydrogen peroxide is anhydrous, in addition to aqueous solution, hydrogen peroxide such as urea and quaternary ammonium salt (hydrogen peroxide is coordinated to urea and quaternary ammonium salt like water in crystal water) Can be used, but an aqueous solution is particularly preferred because of its ease of handling. Hydrogen peroxide water is generally commercially available and can be easily obtained.
本発明のレジスト剥離液の成分量として、アンモニアの含有量は０．１〜１０重量％、好ましくは１〜５重量％である。この範囲を超えてアンモニアの濃度が増加すると剥離効果に優れるが、アンモニア蒸気が多量に発生し、取り扱いが困難となる。逆に少なすぎると剥離効果が不十分となる。 As a component amount of the resist stripping solution of the present invention, the ammonia content is 0.1 to 10% by weight, preferably 1 to 5% by weight. If the concentration of ammonia exceeds this range, the peeling effect is excellent, but a large amount of ammonia vapor is generated, making handling difficult. Conversely, if the amount is too small, the peeling effect becomes insufficient.
過酸化水素の含有量は０．１〜５重量％である。少なすぎるとＳｉのダメージを抑制できなくなり、多すぎると窒化チタン等の他の半導体材料にダメージを与える可能性がある。 The content of hydrogen peroxide is 0.1 to 5 % by weight. If the amount is too small, Si damage cannot be suppressed. If the amount is too large, other semiconductor materials such as titanium nitride may be damaged.
次に本発明のレジスト剥離液は、アンモニア、過酸化水素、水以外の成分として、炭酸、フッ酸、有機酸の群から選ばれる少なくともひとつの酸及び／又はその塩を含んでなるものである。 Next, the resist stripping solution of the present invention comprises at least one acid selected from the group consisting of carbonic acid, hydrofluoric acid, and organic acids and / or salts thereof as components other than ammonia, hydrogen peroxide, and water. .
本発明のレジスト剥離液に使用する炭酸とは二酸化炭素水溶液を示す。炭酸塩とはＨ２ＣＯ３の塩であり、正塩、酸性塩（炭酸水素塩）、塩基性塩がある。一般的に金属酸化物又は水酸化物と二酸化炭素とを水の存在で作用させて調製するが、本発明で使用する炭酸の塩は水に可溶なものが好ましい。 Carbonic acid used in the resist stripping solution of the present invention indicates a carbon dioxide aqueous solution. The carbonate is a salt of H 2 CO 3 and includes a normal salt, an acidic salt (bicarbonate), and a basic salt. In general, it is prepared by reacting a metal oxide or hydroxide and carbon dioxide in the presence of water, but the carbonate of carbonate used in the present invention is preferably soluble in water.
水に可溶な炭酸塩を例示すると、アンモニウム塩、アルカリ金属塩、テルル塩等が挙げられる。半導体製造においては金属イオンが嫌われるため、アンモニウム塩が特に好ましい。本発明においてアンモニウム塩とは、アンモニアと炭酸の塩、アミンと炭酸の塩、第四級アンモニウムの炭酸塩を示す。炭酸アンモニウムは、通常、炭酸アンモニウム、炭酸水素アンモニウム、カルバミン酸アンモニウムの混合物として市場に流通しているが、これらの混合物を使用しても良い。また、炭酸アンモニウム水溶液は、７０℃で炭酸とアンモニアに分解することが知られているが、炭酸とアンモニアに分解した状態で使用しても良い。 Examples of water-soluble carbonates include ammonium salts, alkali metal salts, tellurium salts and the like. Ammonium salts are particularly preferred because metal ions are disliked in semiconductor manufacturing. In the present invention, the ammonium salt means a salt of ammonia and carbonic acid, a salt of amine and carbonic acid, or a carbonate of quaternary ammonium. Ammonium carbonate is usually distributed in the market as a mixture of ammonium carbonate, ammonium hydrogen carbonate and ammonium carbamate, but these mixtures may be used. Further, it is known that an aqueous ammonium carbonate solution decomposes into carbonic acid and ammonia at 70 ° C., but it may be used in a state of being decomposed into carbonic acid and ammonia.
本発明のレジスト剥離液の成分である炭酸、フッ酸、有機酸の群から選ばれる少なくともひとつの酸及び／又はその塩が、炭酸及び／又は炭酸塩の場合、炭酸及び／又は炭酸塩の含有量が０．０５〜２重量％である。この範囲を越えて炭酸及び／又は炭酸塩が多すぎても、逆に少なすぎても剥離効果が低下する。 When at least one acid selected from the group consisting of carbonic acid, hydrofluoric acid, and organic acid and / or a salt thereof, which is a component of the resist stripping solution of the present invention, is carbonic acid and / or a carbonate, carbonic acid and / or carbonate is contained. The amount is 0 . 05 to 2% by weight. Exceeding this range, if the carbonic acid and / or carbonate is too much or too little, the peeling effect is lowered.
本発明のレジスト剥離液の成分である炭酸、フッ酸、有機酸の群から選ばれる少なくともひとつの酸及び／又はその塩が、フッ酸及び／又はその塩において、フッ酸の塩としては、ナトリウム塩、カリウム塩等の金属塩やアンモニム塩等をあげることができる。 At least one acid selected from the group consisting of carbonic acid, hydrofluoric acid, and organic acid and / or a salt thereof, which is a component of the resist stripping solution of the present invention, is hydrofluoric acid and / or a salt thereof. Examples thereof include metal salts such as salts and potassium salts, and ammonium salts.
これらフッ酸及びその塩のうち、取扱いが容易で金属を含まないフッ化アンモニウムが特に好ましい。これらのフッ酸及び／又はその塩は単独で用いてもよく、２種以上組み合わせて用いても良い。 Of these hydrofluoric acids and salts thereof, ammonium fluoride that is easy to handle and contains no metal is particularly preferred. These hydrofluoric acids and / or salts thereof may be used alone or in combination of two or more.
フッ酸及び／又はその塩の含有量は０．０５〜２重量％である。この範囲を越えてフッ酸及び／又はその塩が多すぎても、逆に少なすぎても剥離効果が低下する。 The content of hydrofluoric acid and / or its salt is 0.05 to 2% by weight. Exceeding this range, if the amount of hydrofluoric acid and / or salt thereof is too much or too little, the peeling effect is lowered.
本発明のレジスト剥離液の成分である炭酸、フッ酸、有機酸の群から選ばれる少なくともひとつの酸及び／又はその塩が、有機酸及び／又は有機酸塩である場合、有機酸としては特にカルボン酸を含有するものが好ましい。 When at least one acid selected from the group consisting of carbonic acid, hydrofluoric acid and organic acid and / or a salt thereof, which is a component of the resist stripping solution of the present invention, is an organic acid and / or an organic acid salt, Those containing a carboxylic acid are preferred.
有機酸の具体例としては、ギ酸、酢酸、シュウ酸、マロン酸、コハク酸、フタル酸などのカルボン酸類、クエン酸、リンゴ酸、酒石酸、乳酸、グリコール酸、サリチル酸などのヒドロキシカルボン酸類であり、それらの塩としては、ナトリウム塩、カリウム塩等の金属塩やアンモニム塩等をあげることができる。 Specific examples of organic acids are carboxylic acids such as formic acid, acetic acid, oxalic acid, malonic acid, succinic acid, and phthalic acid, and hydroxycarboxylic acids such as citric acid, malic acid, tartaric acid, lactic acid, glycolic acid, and salicylic acid. Examples of such salts include metal salts such as sodium salts and potassium salts, and ammonium salts.
これらのうち、レジスト剥離能力の観点から、特に、フタル酸、シュウ酸、リンゴ酸、乳酸が好ましい。これらの有機酸及び／又はその塩は単独で用いてもよく、２種以上組み合わせて用いても良い。これらは、一般的に市販されており容易に入手することができる。 Of these, phthalic acid, oxalic acid, malic acid, and lactic acid are particularly preferable from the viewpoint of resist stripping ability. These organic acids and / or salts thereof may be used alone or in combination of two or more. These are generally commercially available and can be easily obtained.
有機酸塩としては水に可溶なものが好ましく、水に可溶な有機酸塩を例示すると、アンモニウム塩、アルカリ金属塩等が挙げられる。半導体製造においては金属イオンは嫌われるため、特にアンモニウム塩が好ましい。 Organic salts that are soluble in water are preferred, and examples of water-soluble organic acid salts include ammonium salts and alkali metal salts. Since metal ions are disliked in semiconductor production, ammonium salts are particularly preferred.
有機酸及び／又はその塩の含有量は０．０５〜２重量％である。この範囲を越えて有機酸及び／又はその塩が多すぎても、逆に少なすぎても剥離効果は低下する。
The content of the organic acid and / or salt thereof is 0 . 05 to 2% by weight. Exceeding this range, if the organic acid and / or its salt is too much or too little, the peeling effect is lowered.
本発明の組成における残部は水を含んでなるものである。 The balance in the composition of the present invention comprises water.
本発明のレジスト剥離液は、レジストを剥離する際に各成分を添加して使用しても良いし、あらかじめ各成分を混合しておいてから使用しても良い。 The resist stripping solution of the present invention may be used by adding each component when stripping the resist, or may be used after mixing each component in advance.
本発明のレジスト剥離液は、無機質基体上に塗布されたレジスト膜の中でも特にイオン注入などの処理をして剥離性の悪くなったレジスト層、反射防止膜を剥離する際に最も好適に用いられる。 The resist stripping solution of the present invention is most preferably used for stripping a resist layer and an antireflective film that have deteriorated peelability due to treatment such as ion implantation among resist films coated on an inorganic substrate. .
本発明におけるレジスト剥離液は例えば基板工程において用いることができる。ここで基板工程とは半導体製造工程の配線構造形成前までのいわゆるＦＥＯＬ（Ｆｒｏｎｔ Ｅｎｄ ｏｆ Ｌｉｎｅ）工程のことである。 The resist stripping solution in the present invention can be used in a substrate process, for example. Here, the substrate process is a so-called FEOL (Front End of Line) process before the formation of the wiring structure in the semiconductor manufacturing process.
本発明のレジスト剥離液は、ネガ型、ポジ型を含めて、アルカリ性水溶液で現像できるｉ線用、ＫｒＦエキシマレーザー用等のレジストの剥離、さらにはひ素又はホウ素などのイオン注入を施されたレジストの剥離において特に高い剥離性を発揮する。 The resist stripping solution of the present invention includes resists such as negative type and positive type that can be developed with an alkaline aqueous solution, such as resists for i-line and KrF excimer lasers, and further ion-implanted with arsenic or boron. Exhibits particularly high releasability in peeling.
本発明のレジスト剥離液は２０℃〜８０℃の温度で１分以内の洗浄時間でレジストを剥離することができる。 The resist stripping solution of the present invention can strip the resist at a temperature of 20 ° C. to 80 ° C. for a cleaning time of 1 minute or less.
本発明のレジスト剥離液は多結晶Ｓｉ（ｐｏｌｙ−Ｓｉ）、Ｓｉ酸化膜（ＳｉＯ２）などにダメージを与えることなく、８０℃以下の温度及び短時間（〜１分）にレジスト、反射防止膜が剥離でき、特にひ素又はホウ素をイオン注入して剥離性の悪くなったレジストの剥離性能に優れ、基板工程用レジスト剥離液として極めて有用である。 The resist stripping solution of the present invention is a resist, antireflection film at a temperature of 80 ° C. or less and for a short time (˜1 minute) without damaging polycrystalline Si (poly-Si), Si oxide film (SiO 2 ), etc. Can be peeled off, and is particularly excellent as a resist stripping solution for a substrate process, because it has excellent stripping performance for resists that have deteriorated peelability due to ion implantation of arsenic or boron.
以下、本発明の方法を実施例により説明するが、本発明はこれらに限定されるものではない。 Hereinafter, the method of the present invention will be described with reference to examples, but the present invention is not limited thereto.
実施例１〜２１、比較例１〜１８
イオン種としてひ素を１０１４個／ｃｍ２イオン注入したポジ型レジストを塗布したシリコンウエハ（ポストベーク１２０℃有り、アドバンテック（株）製）を表１に示す剥離液に８０℃、１分浸漬し、その後水洗いし、乾燥した。なお、アンモニアはキシダ化学、過酸化水素はアデカスーパーＥＬ（旭電化工業製）、炭酸アンモニウム（炭酸水素アンモニウムとカルバミン酸アンモニウムを含む）は関東化学製、フッ化アンモニウムは和光純薬製、マロン酸、酒石酸はキシダ化学製、シュウ酸、コハク酸、フタル酸、グリコール酸は関東化学製、クエン酸、リンゴ酸、乳酸、硫酸は和光純薬製、水酸化テトラメチルアンモニウムは多摩化学工業（株）製（高純度グレード）のものを使用した。
Examples 1-21, Comparative Examples 1-18
A silicon wafer (post-baked at 120 ° C., manufactured by Advantech Co., Ltd.) coated with a positive resist into which 10 14 ions / cm 2 of arsenic were ion-implanted as ion species was immersed in a stripping solution shown in Table 1 at 80 ° C. for 1 minute. Then, it was washed with water and dried. Ammonia is Kishida Chemical, hydrogen peroxide is Adeka Super EL (Asahi Denka Kogyo), ammonium carbonate (including ammonium hydrogen carbonate and ammonium carbamate) is manufactured by Kanto Chemical, ammonium fluoride is Wako Pure Chemicals, malonic acid Tartaric acid is manufactured by Kishida Chemical, oxalic acid, succinic acid, phthalic acid, glycolic acid are manufactured by Kanto Chemical, citric acid, malic acid, lactic acid, sulfuric acid are manufactured by Wako Pure Chemicals, and tetramethylammonium hydroxide is manufactured by Tama Chemical Industry Co., Ltd. The product (high purity grade) was used.
シリコンウエハ表面を走査型電子顕微鏡で観察しレジストの剥離性を調べた。また、Ｓｉの侵食については、ｐｏｌｙ−Ｓｉ被膜、ＳｉＯ２膜被膜を形成したシリコンウエハを８０℃、５分間浸漬し、表面観察によって評価した。 The surface of the silicon wafer was observed with a scanning electron microscope to examine the peelability of the resist. Also, the erosion of Si, poly-Si film, 80 ° C. The silicon wafer was formed a SiO 2 film coating was immersed for 5 minutes, it was evaluated by surface observation.
表１〜表３に夫々炭酸系、フッ酸系、有機酸系の剥離液組成及び剥離結果を示す。組成においていずれも残部は水とした。 Tables 1 to 3 show the carbonic acid-based, hydrofluoric acid-based and organic acid-based stripping liquid compositions and stripping results, respectively. In each composition, the balance was water.
レジストの剥離性、侵食性は以下のように評価した。
＜レジストの剥離性＞
○：完全剥離、△：一部残存、×：全面に残存
＜Ｓｉの侵食性＞
：侵食なし、△：一部侵食有り、×：激しい侵食有り
The resist peelability and erosion were evaluated as follows.
<Resist peelability>
○: Completely peeled, Δ: Partially retained, ×: Residual on the entire surface <Si erosion>
: No erosion, △: Partial erosion, ×: Heavy erosion
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| JP5574795B2 (en) * | 2010-04-15 | 2014-08-20 | 富士フイルム株式会社 | Semiconductor substrate cleaning method |
| TWI532834B (en) * | 2010-04-15 | 2016-05-11 | 富士軟片股份有限公司 | Method for cleaning semiconductor substrate, and two-component cleaning agent for semiconductor substrate |
| JP6233779B2 (en) | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | Modified resist stripping method, modified resist stripping solution used therefor, and semiconductor substrate product manufacturing method |
| JP2015118125A (en) | 2013-11-18 | 2015-06-25 | 富士フイルム株式会社 | Stripper for modified resist, method for stripping modified resist using the same, and method for manufacturing semiconductor substrate product |
| JP6200289B2 (en) | 2013-11-18 | 2017-09-20 | 富士フイルム株式会社 | Semiconductor substrate processing liquid, processing method, and semiconductor substrate product manufacturing method using the same |
| JP6421197B2 (en) | 2014-11-27 | 2018-11-07 | 富士フイルム株式会社 | Removal liquid, removal method using the same, and method for manufacturing semiconductor substrate product |
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