JP4371071B2 - Insulating film forming jig and insulating film forming method - Google Patents

Description

  The present invention relates to an insulating film forming jig and an insulating film forming method used when vacuum laminating a substrate.

  In order to protect a semiconductor device in which a semiconductor element is formed on a semiconductor substrate, an electronic component, a passive element such as a coil or a capacitor, or an electronic component in which a semiconductor element such as an IC (Integrated Circuit) is mounted on an insulator substrate, a semiconductor In many cases, an element surface or an element mounted on an insulating substrate is covered with a film-like insulating organic material (dry film resist) for protection. Further, there are irregularities associated with the formation of the semiconductor elements on the surface of the semiconductor substrate, and they form a three-dimensional structure on the insulator substrate on which elements having a thickness of several tens of μm or more are arranged. Therefore, in a normal laminating method, air enters the inside.

  Therefore, as a technique for preventing the inflow of air, a vacuum laminator is known as a kind of method for laminating an insulating organic material (dry film resist) on a film serving as a protective film on a semiconductor substrate or an insulator substrate. . This vacuum laminator includes a chamber in which a vacuum atmosphere can be formed by evacuation.

  Further, the film body is provided with a heatable film body that expands in the chamber by adjusting the pressure, and is expanded by introducing a substrate and a dry film resist that can be accommodated in the chamber one by one and then evacuating the film body. Is bonded to a dry film resist.

  In addition, as a technique for creating a synthetic resin coating on a substrate in a vacuum, a mask made of a flexible film or a ferromagnetic metal membrane plate having ferromagnetism is adhered to the substrate surface by an electromagnet provided on the back surface of the substrate. A technique is known in which a synthetic resin monomer is polymerized from an evaporation source outlet while forming a synthetic resin pattern (see, for example, Patent Document 1 below).

  Also known is a technique for laminating a dry film on a laminate comprising a conductive inorganic layer-insulating layer-conductive inorganic layer, or a laminate comprising a conductive inorganic layer-insulating layer, and manufacturing an electronic component by wet etching. (For example, see Patent Document 2 below.)

JP-A-5-51729 JP 2003-69188 A

  However, in the above-described conventional technology, the resist material concentrates on the outer peripheral portion of the substrate, and the bulge is 10 μm or more than the flat portion of the resist. The element where the resist is raised becomes out of specification because the insulating film is thick. For this reason, there is a problem that the number of defective elements increases due to the rise of the outer peripheral portion.

  An object of the present invention is to provide an insulating film forming jig and an insulating film forming method capable of reducing the swell of a resist when vacuum laminating, in order to solve the above-described problems caused by the prior art. .

  In order to solve the above-described problems and achieve the object, an insulating film forming jig according to the invention of claim 1 is an insulating film forming jig used when vacuum laminating a substrate, and includes an outer periphery of the substrate. And a thickness of the inner peripheral wall surface of the storage portion is greater than a thickness of the outer peripheral wall surface of the substrate.

  According to a second aspect of the present invention, there is provided the insulating film forming jig according to the first aspect, wherein the difference between the thickness of the inner peripheral wall surface of the insulating film forming jig and the outer peripheral wall surface of the substrate is the difference. Is in the range of 40 to 210 μm.

  According to a third aspect of the present invention, there is provided the insulating film forming jig according to the first or second aspect, wherein the inner peripheral wall surface of the insulating film forming jig is between the outer peripheral wall surface of the substrate. It is formed with a predetermined gap, and the gap is 0.8 mm or less.

In order to solve the above-described problems and achieve the object, an insulating film forming method according to a fourth aspect of the present invention is an insulating film forming method for forming an insulating film on a substrate, wherein the substrate is disposed along an outer peripheral wall surface of the substrate. An installation step of installing an insulating film forming jig having an accommodating portion to be accommodated, wherein an inner peripheral wall surface of the accommodating portion is thicker than an outer peripheral wall surface of the substrate; and the insulation installed by the installation step And a laminating step of vacuum laminating the substrate with the film forming jig.

  According to the insulating film forming jig and the insulating film forming method of the present invention, it is possible to reduce the swell of the resist generated on the outer peripheral portion of the substrate. Therefore, the number of defective elements in the outer peripheral portion is reduced, and the yield rate can be improved.

  Exemplary embodiments of an insulating film forming jig and an insulating film forming method according to the present invention will be explained below in detail with reference to the accompanying drawings.

(Embodiment)
(About the structure of the insulating film forming jig)
First, an insulating film forming jig and a substrate according to an embodiment of the present invention will be described. FIG. 1-1 is a plan view showing an insulating film forming jig according to an embodiment of the present invention. In FIG. 1-1, the substrate 101 is a substantially circular silicon substrate. The silicon substrate 101 has a linear indicator 110 on a part of the outer periphery. The jig 102 has an annular portion 120 formed in a substantially annular shape. The annular portion 120 has an outer peripheral wall surface 121 and an inner peripheral wall surface 122 having a predetermined diameter.

  FIG. 1-2 is a side sectional view of FIG. 1-1. In FIG. 1-2, the inner diameter L1 of the inner peripheral wall surface 122 is formed to be slightly larger than the outer diameter L2 of the silicon substrate 101. Further, the height of the outer peripheral wall surface 101a of the silicon substrate 101 is H1, and the height of the inner peripheral wall surface 122 of the annular portion 120 of the jig 102 is H2. Further, when the silicon substrate 101 is accommodated in the jig 102, a gap 103 having a width L3 is formed between the silicon substrate 101 and the jig 102.

  Here, the height H2 of the inner peripheral wall surface 122 of the jig 102 is formed higher than the height H1 of the outer peripheral wall surface 101a of the silicon substrate 101 (H1 <H2). Hereinafter, the height H1 of the outer peripheral wall surface of the silicon substrate 101 and the height H2 of the inner peripheral wall surface 122 of the jig 102 are referred to as “thickness”.

(Insulating film formation method)
Next, an insulating film forming method using the jig 102 according to the embodiment of the present invention will be described. FIG. 2 is an explanatory view showing an example of an insulating film forming method using a jig. In FIG. 2, a dry film resist 201 is placed on a silicon substrate 101 and a jig 102 and placed on a silicon rubber (not shown).

  The dry film resist 201 is larger than the diameter of the outer peripheral wall surface 101a of the silicon substrate 101. Normally, a PET film 202 is placed between the silicon rubber and the silicon substrate 101 in order to prevent the dry film resist 201 from sticking to the silicon rubber.

  Next, a processing procedure of the insulating film forming method according to this embodiment will be described. FIG. 3 is a flowchart showing a part of the processing procedure of the insulating film forming method according to the embodiment of the present invention.

  In the flowchart of FIG. 3, first, an element such as an electronic circuit is formed on the silicon substrate 101 (step S301). Next, the jig | tool 102 is installed around the silicon substrate 101 (step S302), and the silicon substrate 101 is vacuum-laminated (step S303). Next, the silicon substrate 101 is exposed (step S304), and the pattern is developed (step S305). Then, post-baking is performed (step S306), and a series of processing is terminated. Thus, vacuum lamination is performed in a state where the silicon substrate 101 is accommodated in the jig 102. Further, when the silicon substrate 101 is accommodated, it is desirable to install the silicon substrate 101 so that L3 is constant.

  In the example described above, the case where the silicon substrate 101 is circular has been described, but the shape of the silicon substrate 101 is not limited to a circle. The jig 102 has an inner diameter (width) larger than the outer diameter (width) of the substrate, so that if the gap 103 is formed between the jig 102 and the silicon substrate 101, the jig 102 has another shape. Also good.

  Next, measurement results of the swell of a dry film resist (hereinafter referred to as “resist”) formed by the insulating film forming method of the present invention are shown. As Experimental Example 1, a jig 102 thicker than the silicon substrate 101 was used, and an average step between the silicon substrate 101 and the jig 102 (thickness difference L4 was set to 45 to 210 μm. Also, the silicon substrate 101 and the jig 102 were used. The silicon substrate 101 was a silicon wafer having a diameter of 100 mm, and the inner diameter of the jig 102 was 100.5 mm.

  The vacuum laminator used a diaphragm type made by Nichigo Morton. The vacuum lamination conditions were a temperature of 100 ° C., a pressure of 0.4 MPa, and a pressurization time of 20 seconds. Further, in order to compare with Experimental Example 1, as a comparative example (1 to 4), the difference in thickness between the jig 102 and the silicon substrate 101 was changed, and the amount of swelling was measured.

  Specifically, a sample prepared without using the jig 102 when vacuum laminating is referred to as Comparative Example 1. A sample prepared by setting the difference L4 between the thicknesses of the silicon substrate 101 and the jig 102 to 285 μm (substrate <jig) is referred to as Comparative Example 2. A sample prepared by setting the difference L4 in thickness between the silicon substrate 101 and the jig 102 as 445 μm (substrate <jig) is referred to as Comparative Example 3. Further, a sample in which the jig 102 is made thinner than the silicon substrate 101 and the thickness difference L4 is 115 μm (substrate> jig) is referred to as Comparative Example 4.

  As described above, the thickness difference L4 between the silicon substrate 101 and the jig 102 was changed, and vacuum lamination was performed under the same conditions as in Experimental Example 1, and the swell of the resist was measured. The swell of the resist was measured using a stylus profilometer.

(Measurement result 1)
Next, measurement results will be described. FIG. 4 is a graph showing the relationship between the level difference between the jig and the substrate and the resist swell amount. In FIG. 4, the vertical axis represents the “swelling amount (μm)” and the horizontal axis represents “the step between the substrate and the jig (μm)”. Further, when the value of “step (μm) between the substrate and the jig” on the horizontal axis is a negative value, it indicates that the jig 102 is thicker. In the following, when the jig 102 is thicker than the silicon substrate 101, a negative value is assumed, and when the silicon substrate 101 is thicker than the jig 102, a positive value is assumed. Further, when the value of the “swelling amount (μm)” on the vertical axis is a negative value, the value when the dent is generated in the resist is shown.

  As above-mentioned, the measurement result about each sample of Experimental example 1 and Comparative Examples 1-4 was plotted. A plurality of similar samples were prepared for Experimental Example 1 and Comparative Examples 1 to 4, and the amount of swell of the resist was measured for each sample.

  First, the results of Experimental Example 1 will be described. The result of Experimental Example 1 is shown in reference numeral 401. In Experimental Example 1, measurement was performed with steps of −45 μm, −125 μm, and −210 μm. When the step was −45 μm, the amount of swell from the flat surface of the resist was 3 μm or less. In addition, when the step was −125 μm and −210 μm, no swell from the flat surface of the resist (hereinafter referred to as “swell”) was observed.

  Next, Comparative Examples 1 to 4 will be described. In Comparative Example 1 (without a jig), although not shown, the amount of swelling from the resist flat surface was about 11 μm at most. Moreover, the result of Comparative Example 2 (−285 μm) is shown in reference numeral 402. In Comparative Example 2, resist swell did not occur. The result of Comparative Example 3 (-445 μm) is indicated by reference numeral 403. In Comparative Example 3, no swell occurred, but concavity occurred. The dent values varied, with dents of about 4 μm to about 8 μm. The result of Comparative Example 4 (+115 μm) is indicated by reference numeral 404. In Comparative Example 4, the amount of bulge from the resist flat surface was about 8 μm at most.

  In addition, when an insulating film is formed on the substrate 101, it is important how much a region outside the standard exists in the outer peripheral portion of the silicon substrate 101 in addition to the resist swell amount. As an index indicating a region outside the standard, the distance from the position where the bulge amount of the resist with respect to the flat surface of the resist decreases by ± 3 μm to the substrate edge was used.

  FIG. 5 is an explanatory diagram (part 1) illustrating an example of a region that is out of resist specifications. In FIG. 5, the resist surface 501 is indicated by a thick line. In addition, the height of the resist flat surface of the resist surface 501 is indicated by a dotted line 502. Further, h1 indicates a position where the resist rises most from the flat surface of the resist. Specifically, the length is between the dotted line 502 and the dotted line 503.

  H2 indicates a position 3 μm higher than the flat surface of the resist. Specifically, the lengths of the dotted line 502 and the dotted line 504 are shown. H3 indicates a position 3 μm lower than the flat surface of the resist. Specifically, it is the length of the dotted line 502 and the dotted line 505.

  Further, w1 indicates a distance from the substrate edge 506 to a position 507 where the resist surface 501 is lowered by 3 μm. Specifically, it is the length of the substrate end 506 and the dotted line 508. Further, w2 indicates the distance from the substrate edge 506 to the position 509 where the resist surface 501 rises by 3 μm. Specifically, for example, it is the length between the substrate end 506 and the dotted line 510.

  As shown in FIG. 5, even when the resist swells, a portion lower than the flat surface of the resist is generated on the outer peripheral portion of the silicon substrate 101. In such a case, the area from the substrate end 506 to the position where the resist surface 501 rises by 3 μm from the flat surface of the resist is out of specification. Specifically, for example, in FIG. 5, the area from the substrate end 506 of w2 to the dotted line 510 is out of specification.

  FIG. 6 is an explanatory diagram (part 2) illustrating an example of a region outside the resist standard. In FIG. 6, the resist surface 501 is indicated by a thick line. As shown in the figure, even when resist swell does not occur, a portion where the resist is sharply thinned is formed on the outer peripheral portion of the silicon substrate 101. In addition, the height of the flat surface of the resist surface 501 is indicated by a dotted line 601.

  A dotted line 602 indicates a position 3 μm lower than the dotted line 601. Therefore, h4 is 3 μm. Further, w3 indicates a distance from the substrate end 506 to a position 603 where the resist surface 501 is lowered by 3 μm from the flat surface of the resist. Specifically, it is the length between the substrate end 506 and the dotted line 604. As described above, the dotted line 604 from the substrate end 506 indicated by w3 is a nonstandard region.

(Measurement result 2)
FIG. 7 is a graph showing the relationship between the step between the substrate and the jig and the rise of the resist to ± 3 μm from the substrate end. In FIG. 7, the vertical axis indicates “distance (mm) from the edge of the substrate until the swell amount becomes ± 3 μm”, and the horizontal axis indicates “step difference between the substrate and the jig (μm)”.

  The positive / negative relationship on the horizontal axis is the same as that in FIG. Further, the distance (−3 μm) from the substrate edge 506 to the position 3 μm lower is plotted with a rhombus, and the distance (+3 μm) from the substrate edge 506 to the position 3 μm up is plotted with a square.

  In FIG. 7, reference numeral 701 indicates the result of Experimental Example 1. Reference numeral 702 indicates the results of Comparative Example 2, reference numeral 703 indicates the results of Comparative Example 3, and reference numeral 704 indicates the results of Comparative Example 4. As shown in the figure, when the jig 102 is thicker than the silicon substrate 101, the distance from the substrate edge 506 to ± 3 μm increases as the absolute value of the level difference between the silicon substrate 101 and the jig 102 increases. It is getting bigger. Further, in Comparative Example 2 indicated by reference numeral 702, the bulge did not occur as shown in FIG. 4, but the distance from the substrate edge 506 to the 3 μm drop was large, which was about 6 mm.

  Moreover, in the comparative example 3 shown with the code | symbol 703, the distance until it falls 3 micrometers from the board | substrate edge 506 became 6 mm or more. Moreover, in the comparative example 4 shown by the code | symbol 704, the distance from the board | substrate edge 506 to 3 micrometers rise became large with 6 mm or more. Moreover, in the comparative example 4, both the rhombus and the square are plotted. This is because the resist is swelled and a portion of the outer peripheral portion of the silicon substrate 101 is lower than the flat surface of the resist.

  As described above, when vacuum lamination is performed, the rising of the resist can be reduced by installing the jig 102 around the silicon substrate 101. It is more effective to use a jig 102 thicker than the silicon substrate 101. Furthermore, by setting the level difference between the silicon substrate 101 and the jig 102 in the range of 40 to 210 μm, the resist swell can be reduced to 3 μm or less, and the distance until the resist swell rises from the substrate edge 506 by 3 μm is 3. It can be 5 mm or less.

  Next, a sample was prepared by changing an average gap between the silicon substrate 101 and the jig 102. The vacuum lamination was performed under the same conditions as in Experimental Example 1. Further, a jig 102 thicker than the silicon substrate 101 was used, and the step was set to 125 μm.

(Measurement result 1)
FIG. 8 is a graph showing the relationship between the step between the jig and the silicon substrate according to Experimental Example 2 and the swell amount of the resist. In FIG. 8, the vertical axis indicates “swelling amount (μm)” and the horizontal axis indicates “average gap (mm) between substrate and jig”. The positive / negative relationship on the vertical axis is the same as in FIG.

  Next, the results of Experimental Example 2 will be described. Reference numeral 801 is the result when the average gap is 0 mm, reference numeral 802 is the average gap is about 0.25 mm, reference numeral 803 is the average gap is about 0.5 mm, and reference numeral 804 is the result when the average gap is about 0.75 mm. It is. As shown in the figure, when the average gap between the silicon substrate 101 and the jig 102 is 0.5 mm or less (reference numerals 801, 802, 803), the resist does not rise. Further, as indicated by reference numeral 804, when the average gap between the silicon substrate 101 and the jig 102 is 0.75 mm, swell occurs, and the value is as large as about 4 μm.

(Measurement result 2)
FIG. 9 is a graph showing the relationship between the average gap between the substrate and the jig according to Example 2 and the rise of the resist to ± 3 μm from the substrate edge. In FIG. 9, the vertical axis indicates “the distance (mm) from the end of the substrate until the rising amount becomes ± 3 μm”, and the horizontal axis indicates “the average gap (mm) between the substrate and the jig”. The plot is the same as in FIG.

  In FIG. 9, reference numeral 901 is an average gap of 0 mm, reference numeral 902 is an average gap of about 0.25 mm, reference numeral 903 is an average gap of about 0.5 mm, and reference numeral 904 is an average gap of about 0.75 mm. Is the result of. As shown in FIG. 8, when the average gap is 0.75 mm (reference numeral 804), the bulge amount is 4 μm, but the distance from the substrate edge 506 to ± 3 μm is 3.5 mm or less (reference numeral 904). As described above, by setting the average gap between the silicon substrate 101 and the jig 102 to 0.8 mm or less, it is possible to reduce the rising amount of the outer peripheral portion of the dry film resist 201 on the silicon substrate 101.

  As described above, according to the insulating film forming jig and the insulating film forming method, when vacuum laminating, the jig 102 is installed around the silicon substrate 101, and the jig 102 is made larger than the thickness of the silicon substrate 101. By increasing the thickness, it is possible to reduce the swell of the resist generated on the outer periphery of the substrate.

  In the above-described embodiment, the method of vacuum laminating the dry film resist 201 as a protective film on the silicon substrate 101 has been described. However, an insulator substrate may be used instead of the silicon substrate 101. Even if an insulating film is formed by vacuum lamination using an insulating substrate, the resist swell can be reduced.

  In addition, the shape of the semiconductor substrate and the insulator substrate has been described above with respect to the circular form, but the shape is not limited to the circular shape, and can be applied to a rectangular substrate. In the case of using a square substrate, the rise of the resist can be similarly reduced by using a jig that is slightly thicker than the outer periphery of the square substrate.

  As described above, the jig for forming an insulating film and the method for forming an insulating film according to the present invention are useful for manufacturing a semiconductor device or an electronic component, and are particularly suitable for an insulating film forming apparatus using vacuum lamination.

It is a top view which shows the jig | tool for insulating film formation concerning this embodiment. It is a sectional side view of Drawing 1-1. It is explanatory drawing which shows an example of the insulating film formation method using a jig | tool. It is a flowchart which shows a part of process procedure of the insulating film formation method concerning embodiment of this invention. It is the graph shown about the level | step difference of a jig | tool and a board | substrate, and the relationship of the amount of swelling of a resist. It is explanatory drawing (the 1) which shows an example of the area | region which becomes a resist outside specification. It is explanatory drawing (the 2) which shows an example of the area | region which becomes a resist outside specification. It is the graph which showed about the level | step difference of a board | substrate and a jig | tool, and the relationship until the swelling amount of a resist becomes +/- 3micrometer from the board | substrate edge. It is the graph shown about the relationship between the jig | tool concerning Experimental example 2, the level | step difference of a silicon substrate, and the amount of swelling of a resist. It is the graph shown about the average clearance gap between the board | substrate concerning a Example 2, and the relationship until the swelling amount of a resist becomes +/- 3micrometer from the board | substrate end.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Silicon substrate 101a The outer peripheral wall surface of a silicon substrate 102 Jig 103 Crevice 120 Annular part 121 Outer peripheral wall surface 122 Inner peripheral wall surface 201 Dry film resist 202 PET film

Claims (4)

An insulating film forming jig used when vacuum laminating a substrate,
An accommodating portion for accommodating the substrate formed corresponding to the shape of the outer periphery of the substrate;
An insulating film forming jig , wherein the inner peripheral wall surface of the housing portion is thicker than the outer peripheral wall surface of the substrate . 2. The insulating film forming jig according to claim 1, wherein a difference between a thickness of the inner peripheral wall surface of the insulating film forming jig and a thickness of the outer peripheral wall surface of the substrate is in a range of 40 to 210 μm. The inner peripheral wall surface of the jig for forming an insulating film is formed with a predetermined gap between the outer peripheral wall surface of the substrate and the gap is 0.8 mm or less. 2. A jig for forming an insulating film according to 2. In an insulating film forming method for forming an insulating film on a substrate,
An installation step of installing a jig for forming an insulating film having a housing portion for housing the substrate along an outer peripheral wall surface of the substrate, wherein an inner peripheral wall surface of the housing portion is thicker than an outer peripheral wall surface of the substrate. When,
Laminating step of vacuum laminating the insulating film forming jig installed by the installation step and the substrate;
An insulating film forming method comprising:

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