JP4369255B2 - Resist developer and method for manufacturing semiconductor device using the resist developer - Google Patents

Description

  The present invention relates to a resist developer and a method for manufacturing a semiconductor device using the resist developer.

Conventionally, an alkaline developer containing tetramethylammonium hydroxide (TMAH) or the like is used in a lithography technique in which a resist solution is applied onto a substrate such as semiconductor wear and developed after exposure to form a resist pattern. (Patent Document 1).
JP-A-5-181286

  However, when forming a resist pattern using such an alkaline developer, there is a problem in that aluminum is corroded by the developer if wiring or pads such as aluminum are exposed.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a resist developer that can be developed without corroding a metal such as aluminum. Another object of the present invention is to provide a technique for manufacturing a semiconductor device without corroding a metal such as aluminum.

  According to the present invention, there is provided a resist developer containing at least one compound selected from the group consisting of triazole, imidazole, thiazole, thiadiazole, and derivatives thereof.

  By using such a compound, the corrosion resistance to metals such as aluminum and copper can be improved. In such azole compounds containing a heterocyclic ring, it is considered that the anticorrosiveness to metals is enhanced by the chelating action of nitrogen in the heterocyclic ring.

  In the resist developer of the present invention, the compound can be benzotriazole or a derivative thereof.

  The resist developer of the present invention may further contain an alkaline compound that is tetraalkylammonium hydroxide or 2-hydroxyethyltrimethylammonium hydroxide.

  The resist developer of the present invention can further contain an acetylene glycol surfactant. Thereby, the corrosion resistance to metals, such as aluminum and copper, can be improved more. Further, the penetrating power is improved and a good development pattern can be obtained.

  The resist developer of the present invention can further contain a nonionic surfactant different from the acetylene glycol surfactant. Thereby, the solubility of a resist can be promoted.

  The resist developer of the present invention can further contain an amine compound. Thereby, the solubility of a resist can be improved. Here, the amine compound may include an amino alcohol.

  The resist developer of the present invention can further contain a linear polyhydric alcohol. Thereby, the solubility of the said compound can be improved. Here, the linear polyhydric alcohol can be a dihydric to decavalent linear alcohol.

  According to the present invention, a resist developer containing an acetylene glycol surfactant is provided. Thereby, the corrosion resistance to metals, such as aluminum and copper, can be improved more. Further, the penetrating power is improved and a good development pattern can be obtained.

  The resist developer of the present invention can further contain a nonionic surfactant different from the acetylene glycol surfactant. Thereby, the solubility of a resist can be promoted.

  The resist developer of the present invention can further contain an amine compound. Here, the amine compound may include an amino alcohol.

  According to the present invention, a step of forming a resist on a semiconductor substrate on which a metal member is formed, a step of irradiating the resist with a light beam or an electron beam, and a step of developing the resist with any of the above resist developers In the step of developing with a resist developer, there is provided a method of manufacturing a semiconductor device in which the resist developer is in contact with at least a part of the metal member.

  In the present invention, since the resist is developed using a resist developer having high anticorrosive properties to metals such as aluminum and copper, the metal member does not corrode even if the metal member contacts the resist developer at the time of development. The apparatus can be manufactured with high accuracy.

  In the method of manufacturing a semiconductor device of the present invention, in the step of forming a resist, the resist can be formed on the metal member. In the step of developing with a resist developer, at least a part of the metal member covered with the resist is formed. Can be exposed.

  In the production method of the present invention, the resist can contain an epoxy resin composition.

  According to the present invention, a resist developer that can be developed without corroding a metal such as aluminum can be provided. According to the present invention, it is possible to provide a technique for manufacturing a semiconductor device without corroding a metal such as aluminum.

  In the present embodiment, the developer contains an alkaline compound, an amine compound, an azole, a nonionic surfactant, and water.

  In the embodiment of the present invention, examples of the alkaline compound include tetraalkylammonium hydroxide such as tetraethylammonium hydroxide and tetramethylammonium hydroxide (TMAH), or 2-hydroxyethyltrimethylammonium hydroxide (choline). The

  The content of the alkaline compound in the developer with respect to the total amount of the developer varies depending on the type of resist to be developed, but can be, for example, 0.5 to 25% by weight. More preferably, it can be 2 to 5% by weight. By setting the lower limit in such a range, the solubility of the resist can be enhanced. The upper limit is not particularly limited, but by setting the upper limit in this range, the dissolution rate of the resist can be appropriately controlled.

In the embodiment of the present invention, as the amine compound,
N, N-diethylethanolamine _{((C 2 H 5) 2} NC 2 H 4 OH);
N, N-dimethylethanolamine _{((CH 3) 2 NC 2} H 4 OH);
N-(2-aminoethyl) ethanolamine _{(NH 2 C 2 H 4 NHC} 2 H 4 OH);
N- methyldiethanolamine _{(CH 3 N (C 2 H} 4 OH) 2);
N, N-dibutyl ethanol amine _{((C 4 H 9) 2} NC 2 H 4 OH);
N- methylethanolamine _{(CH 3 NHC 2 H 4 OH} );
Ethanolamine (H ₂ NCH ₂ CH ₂ OH);
Diethanolamine (NH (CH ₂ CH ₂ OH) ₂ );
Triethanolamine (N (CH ₂ CH ₂ OH) ₃ );
Examples include propanolamine and the like. These compounds may be used alone or in combination of two or more.

  The content of the amine compound in the developer with respect to the total amount of the developer can be 0.01 to 40% by weight. More preferably, it can be 0.5 to 2 weight%. By setting the lower limit in such a range, the solubility of the resist can be enhanced. The upper limit is not particularly limited, but the resist dissolution rate and the development margin can be appropriately controlled by setting the upper limit.

  In the embodiment of the present invention, the azoles are represented by a cyclic triazole having a structure represented by the following general formula (1), a triazole represented by the following general formula (2), and the following general formula (3). And thiadiazole, benzothiazole represented by the following general formula (4), imidazole and the like. These compounds may be used alone or in combination of two or more.

（Ａ_１は、置換基なし、または水素原子を表す。Ａ_２およびＡ_３は、それぞれ独立して、置換基なし、あるいは水素原子、水酸基、炭素数１〜５のアルキル基、アミノ基、ＳＨ基、あるいは置換または未置換のフェニル基を表す。Ａ_４、Ａ_５、Ａ_６、およびＡ_７は、それぞれ独立して水素原子、水酸基、炭素数１〜５のアルキル基、アミノ基、またはＳＨ基を表す。）

(A ₁ represents no substituent or represents a hydrogen atom. A ₂ and A ₃ each independently represents no substituent, or a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, an amino group, SH. A group, or a substituted or unsubstituted phenyl group, A ₄ , A ₅ , A ₆ , and A ₇ are each independently a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, an amino group, or SH; Represents a group.)

Here, as a specific example of such a cyclic triazole,
1,2,3-benzotriazole;
4,5,6,7-tetrahydro-1H-benzotriazole;
2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole;
2- (3,5-di-tert-butyl-2-hydroxyphenyl) benzotriazole;
2- (3,5-di-t-amyl-2-hydroxyphenyl) benzotriazole;
Examples include 2- (2′-hydroxy-5′-t-octylphenyl) benzotriazole.

（Ａ_８は置換基なし、または水素原子を表す。Ａ_９、Ａ_１０およびＡ_１１は、それぞれ独立して、置換基なし、水素原子、水酸基、炭素数１〜５のアルキル基、アミノ基、またはＳＨ基を表す。）

(A ₈ represents no substituent or represents a hydrogen atom. A ₉ , A ₁₀ and A ₁₁ each independently represent no substituent, a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, an amino group, Or represents an SH group.)

Here, as a specific example of such a triazole,
5-amino-3-mercapto-1,2,4-triazole;
3-amino-1,2,4 triazole;
4-amino-1,2,4-triazole;
Examples include 3-mercapto-1,2,4-triazole.

（Ａ_１２およびＡ_１３は、それぞれ独立して、水素原子、水酸基、炭素数１〜５のアルキル基、アミノ基、またはＳＨ基を表す。）

(A ₁₂ and A ₁₃ each independently represent a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, an amino group, or an SH group.)

Here, as a specific example of such a thiadiazole,
2,5-dimercapto-1,3,4-thiadiazole;
Examples include thiadiazoles such as 3-amino-1,3,4-thiadiazole.

（Ａ_１４は、水素原子、水酸基、炭素数１〜５のアルキル基、アミノ基、またはＳＨ基を表す。）

_{(A 14} represents a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, an amino group or an SH group.)

  Here, specific examples of such benzothiazole include 2-mercaptobenzothiazole.

  Examples of imidazole include benzimidazole and the like.

  Among these, it is preferable to use those containing an alcoholic hydroxyl group in order to improve the solubility in a developer.

  The content of azoles in the developer with respect to the total amount of the developer can be, for example, 0.01 to 10% by weight. More preferably, it can be 0.5 to 2 weight%. By setting the lower limit in such a range, the corrosion resistance of aluminum in the developer can be enhanced. The upper limit is not particularly limited, but by making it within such a range, the corrosion resistance of aluminum can be enhanced without deteriorating the development performance.

  In the embodiment of the present invention, as the linear polyhydric alcohol, ethylene glycol, propylene glycol, trimethylene glycol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1, 2-hexanediol, 2,4-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, cyclopentane-1,2-diol, cyclohexane -1,4-diol, polyethylene glycol, polyoxypropylene glycol, polyoxypropylene-polyoxyethylene glycol, glycerin, trimethylolpropane, 1,2,6-hexanetriol, pentaerythritol, methylglucoside, sorbitol, mannitol, Sucrose and the like. These compounds may be used alone or in combination of two or more.

  The content of the linear polyhydric alcohol in the developer with respect to the total amount of the developer can be, for example, 2 to 50% by weight. More preferably, it can be 5 to 15 weight%. By setting the lower limit in such a range, the corrosion resistance of aluminum in the developer can be enhanced. The upper limit is not particularly limited, but by making it within such a range, the corrosion resistance of aluminum can be improved without deteriorating the development performance.

  In the embodiment of the present invention, as the nonionic surfactant, an acetylene glycol surfactant and an active agent different from the acetylene glycol surfactant can be used.

  In the embodiment of the present invention, examples of the acetylene glycol surfactant include acetylene glycol, an ethylene oxide adduct of acetylene glycol, and acetylene alcohol. These compounds may be used alone or in combination of two or more.

  The content of the acetylene glycol surfactant in the developer with respect to the total amount of the developer is preferably 0.01 to 10% by weight. More preferably, it can be 0.1 to 1 weight%. By setting the lower limit to such a range, the corrosion resistance of aluminum in the developer can be enhanced. The upper limit is not particularly limited, but by making it within such a range, the corrosion resistance of aluminum can be enhanced without deteriorating the development performance.

In the embodiment of the present invention, as the nonionic surfactant different from the acetylene glycol surfactant,
Polyoxyethylene β-naphthyl ether ethylene oxide adduct;
Polyoxyethylene benzyl ether ethylene oxide adduct;
Polyoxyethylene phenyl ether ethylene oxide adduct;
Polyoxyethylene styrenated phenyl ether ethylene oxide adduct;
Polyoxyethylene dodecyl phenyl ether ethylene oxide adduct;
Polyoxyethylene nonylphenyl ether ethylene oxide adduct;
Polyoxyethylene octyl phenyl ether ethylene oxide adduct;
Polyoxyethylene isostearyl ether ethylene oxide adduct;
Polyoxyethylene tridecyl ether ethylene oxide adduct;
Polyoxyethylene secondary alcohol ether ethylene oxide adduct;
Polyoxyethylene synthetic alcohol ether (C12-C15) ethylene oxide adduct;
Polyoxyethylene-2-ethylhexyl ether ethylene oxide adduct;
Polyoxyethylene coconut alcohol ether ethylene oxide adduct;
Polyoxyethylene oleyl ether ethylene oxide adduct;
Polyoxyethylene stearyl ether ethylene oxide adduct;
Polyoxyethylene cetyl ether ethylene oxide adduct;
Polyoxyethylene lauryl ether ethylene oxide adduct;
Examples include polyoxyethylene alkyl ether type ethylene oxide adducts such as polyoxyethylene decyl ether ethylene oxide adducts. These compounds may be used alone or in combination of two or more.

  The content of the nonionic surfactant different from the acetylene glycol surfactant in the developer with respect to the total amount of the developer is preferably 0.1 to 10% by weight. More preferably, it can be 0.5 to 1.5% by weight. By setting the lower limit in such a range, the solubility of the resist can be enhanced. The upper limit is not particularly limited, but by setting the upper limit in this range, it is possible to control the foaming of the developer to be small.

  The water content relative to the total amount of the developer can be 30 to 95% by weight. Note that the developer in this embodiment can also be diluted with water as appropriate. In this specification, “the total amount of the developer” refers to the total amount of the developer that finally acts on the resist after being diluted with water.

  In this embodiment mode, various materials known to be developed with an alkaline compound can be used for the resist. The resist may be either a positive type or a negative type.

  The positive resist is not particularly limited. For example, a novolak resin, a polyimide precursor, a compound in which polybenzoxazole and naphthoquinone diazide sulfonic acid are esterified, or a compound in which naphthoquinone diazide sulfonic acid and phenol compound are esterified And a mixture of a novolak resin, a polyimide precursor, polybenzoxazole, and the like.

  The negative resist is not particularly limited, and examples thereof include a mixture of a compound having an acryloyl group or a methacryloyl group and a photo radical generator, and a mixture of a cationic polymerizable compound such as an epoxy resin and a photo cation generator.

  The photoradical generator is not particularly limited. Can be mentioned.

  Although it does not specifically limit as a compound which has an acryloyl group and a methacryloyl group, For example, the monomer of an acrylic ester or a methacrylic ester etc. are mentioned. Examples include 1,6-hexanediol diacrylate, tripropylene glycol diacrylate, zinc diacrylate, 1,3-butanediol diacrylate, 1,4-butanediol diacrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, triethylene glycol Ethylene glycol diacrylate, tetraethylene glycol diacrylate, polyethylene glycol diacrylate, propoxylated neopentyl glycol diacrylate, trimethylolpropane triacrylate, tris (2-hydroxyethyl) isocyanurate triacrylate, ethoxylated methylolpropane triacrylate, propoxy Methylolpropane triacrylate, pentaerythritol tetraacrylate, di Limethylolpropane tetraacrylate, dipentaerythritol hydroxypentaacrylate, ethoxylated pentaerythritol tetraacrylate, 2- (2-ethoxyethoxy) ethyl acrylate, stearyl acrylate, tetrahydrofurfuryl acrylate, lauryl acrylate, 2-phenoxyethyl acrylate, isodecyl Acrylate, isooctyl acrylate, tridecyl acrylate, caprolactone acrylate, ethoxylated nonylphenol acrylate, ethoxylated bisphenol A diacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene glycol Rudimethacrylate, 1,4-butanediol dimethacrylate, 1.6-hexanediol dimethacrylate, neopentyl glycol dimethacrylate, polypropylene glycol dimethacrylate, 1,3-butylene glycol dimethacrylate, trimethylolpropane trimethacrylate, tetrahydrofurfuryl Examples thereof include methacrylate, cyclohexyl methacrylate, isodecyl methacrylate, lauryl methacrylate, polypropylene glycol monomethacrylate, ethoxylated bisphenol A dimethacrylate, urethane acrylate, acryloyl group or methacryloyl group-containing novolac resin, acryloyl group or methacryloyl group-containing polyimide precursor.

  The epoxy resin is not particularly limited, but examples include bisphenol type epoxy resins such as bisphenol A epoxy resin and bisphenol F epoxy resin, novolac type epoxy resins such as phenol novolac epoxy resin and cresol novolac epoxy resin, and biphenyl type epoxy resin. Stilbene type epoxy resin, triphenol methane type epoxy resin, alkyl-modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, and the like.

  Although it does not specifically limit as a photocation generator, As an example, aryldiazonium salt, diaryliodonium salt, triarylsulfonium salt, triarylselenonium salt, dialkylphenacylsulfonium salt, dialkyl-4-hydroxyphenylsulfonium salt, Examples include sulfonic acid esters and iron-allene compounds.

  In addition to these, additives such as rubber, filler, leveling agent, and coupling agent may be added.

As a resist containing an epoxy resin, it can be set as the following compositions, for example.
20-40 parts by weight of epoxy resin;
20-40 parts by weight of acrylic modified phenolic resin;
20-40 parts by weight of acrylic resin;
0.5 to 10 parts by weight of photoinitiator; and 5 to 20 parts by weight of filler (silica).

1 and 2 are diagrams showing an example of a manufacturing process of the semiconductor device in the present embodiment. 1 is a top view, and FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG.
First, an aluminum pad 102 is formed on a semiconductor substrate 100 (FIGS. 1A and 2A). Subsequently, a resist 104 is formed on the semiconductor substrate 100 by spin coating or laminating (FIGS. 1B and 2B). The resist 104 may be either a positive type or a negative type. In this embodiment mode, an example in which the resist 104 is a negative type is shown.

  Subsequently, a mask 106 having an opening having a predetermined shape is disposed on the resist 104, and the resist is irradiated with a light beam or an electron beam (FIG. 2C). Thereby, only the part irradiated with the light beam or the electron beam of the resist 104 is cross-linked and becomes hardly soluble in the developer. As such a resist 104, for example, a resin composition containing an epoxy resin, an acrylic-modified phenol resin, an acrylic resin, a photoreaction initiator, and a filler as described above can be used. In this case, when the resist 104 is exposed, the acrylic resin is cross-linked at the exposed part, and the exposed part is taken into the epoxy resin and the acrylic modified phenol resin, and the exposed part becomes hardly soluble in the developer. Thereafter, the uncrosslinked resist 104 is removed using the developer in the present embodiment (FIGS. 1C and 2D). Thereby, the resist 104 patterned into a predetermined shape can be formed.

  In this embodiment, since the resist 104 is developed using a developer with high corrosion resistance of aluminum, the aluminum pad 102 is used as the developer even when the aluminum pad 102 is exposed during the development of the resist 104. It will not be corroded. Thereby, a semiconductor device can be manufactured with high accuracy.

  In the above example, the resist 104 is formed on the semiconductor substrate 100. However, the resist 104 can be formed in the same manner when formed on another layer. For example, another resist layer may be formed on the resist 104 shown in FIG. Alternatively, the resist 104 may be formed over another layer, the resist 104 may be used as a mask for patterning the other layer, and then the resist 104 may be removed. The resist 104 in this embodiment can be used as such a mask and can be a layer that is not included in the final semiconductor device or a layer that is included in the final semiconductor device.

(Example 1)
As an alkaline compound, tetramethylammonium hydroxide 3.3% by weight;
As an amine compound, 1.5% by weight of N, N-dimethylethanolamine;
As a nonionic surfactant different from the acetylene glycol surfactant, polyoxyethylene styrenated phenyl ether ethylene oxide adduct 0.9% by weight;
4,5,6,7-tetrahydro-1H-benzotriazole 0.9% by weight as cyclic triazole;
10.5% by weight of sorbitol as a linear polyhydric alcohol;
82.9% by weight of water;
Were mixed to prepare a developer.

  An aluminum piece was immersed in this developer for 10 minutes, and the weight before immersion and the weight after immersion were measured. As a result, the weight loss was 0.8%.

(Example 2)
As an alkaline compound, tetramethylammonium hydroxide 3.3% by weight;
As an amine compound, 1.5% by weight of N, N-dimethylethanolamine;
As a nonionic surfactant different from the acetylene glycol surfactant, polyoxyethylene styrenated phenyl ether ethylene oxide adduct 0.9% by weight;
As an acetylene glycol surfactant, 0.3% by weight of an ethylene oxide adduct of acetylene glycol;
10.5% by weight of sorbitol as a linear polyhydric alcohol;
83.5% by weight of water;
Were mixed to prepare a developer.

  An aluminum piece was immersed in this developer for 10 minutes, and the weight before immersion and the weight after immersion were measured. As a result, the weight loss was 1%.

(Example 3)
As an alkaline compound, tetramethylammonium hydroxide 3.3% by weight;
As an amine compound, 1.5% by weight of N, N-dimethylethanolamine;
0.9% by weight of polyoxyethylene styrenated phenyl ether ethylene oxide adduct as a nonionic surfactant different from acetylene glycol surfactants;
As an acetylene glycol surfactant, 0.3% by weight of an ethylene oxide adduct of acetylene glycol;
10.5% by weight of sorbitol as a linear polyhydric alcohol;
4,5,6,7-tetrahydro-1H-benzotriazole 0.9% by weight as cyclic triazole;
82.6% by weight of water;
Were mixed to prepare a developer.

  An aluminum piece was immersed in this developer for 10 minutes, and the weight before immersion and the weight after immersion were measured. As a result, the weight loss was 0.0%.

(Example 4)
As an alkaline compound, tetramethylammonium hydroxide 3.3% by weight;
As an amine compound, 1.5% by weight of N, N-dimethylethanolamine;
As a nonionic surfactant different from the acetylene glycol surfactant, polyoxyethylene styrenated phenyl ether ethylene oxide adduct 0.9% by weight;
As an acetylene glycol surfactant, 0.3% by weight of an ethylene oxide adduct of acetylene glycol;
10.5% by weight of sorbitol as a linear polyhydric alcohol;
As benzothiazole, 2-mercaptobenzothiazole 0.9% by weight;
82.6% by weight of water;
Were mixed to prepare a developer.

  An aluminum piece was immersed in this developer for 10 minutes, and the weight before immersion and the weight after immersion were measured. As a result, the weight loss was 0.0%.

(Comparative Example 1)
An aluminum piece was immersed in 3% TMAH for 4 minutes, and the weight before immersion and the weight after immersion were measured. As a result, the weight loss was 5.1%.
Moreover, as a result of immersing the aluminum piece for 10 minutes in 3% TMAH and measuring the weight before immersion and the weight after immersion, the weight loss was 15.1%.

(Comparative Example 2)
As an alkaline compound, tetramethylammonium hydroxide 3.3% by weight;
As an amine compound, 1.5% by weight of N, N-dimethylethanolamine;
As a nonionic surfactant different from the acetylene glycol surfactant, polyoxyethylene styrenated phenyl ether ethylene oxide adduct 0.9% by weight;
10.5% by weight of sorbitol as a linear polyhydric alcohol;
83.8% by weight of water;
Were mixed to prepare a developer.

An aluminum piece was immersed in this developer for 4 minutes, and the weight before immersion and the weight after immersion were measured. As a result, the weight loss was 0.5%.
Moreover, as a result of immersing aluminum pieces for 10 minutes in this developer and measuring the weight before immersion and the weight after immersion, the weight loss was 1.2%.

(Example 5)
Further, a resist having the following composition was formed on a silicon substrate, i-line was exposed using a mask having a predetermined pattern, and the resist was developed using the developers of Examples 1 to 4. Development was performed at 25 ° C. for 80 seconds.
30 parts by weight of epoxy resin;
30 parts by weight of acrylic modified phenolic resin;
30 parts by weight of acrylic resin;
1 part by weight of photoinitiator; and 9 parts by weight of filler (silica).

  As a result, it was possible to develop well in any case.

(Example 6)
As a result of immersing a copper alloy test piece (JIS C1100P) in the developer used in Example 3 at room temperature (23 ° C.) for 24 hours, the test piece was not discolored.

It is a figure which shows an example of the manufacturing process of the semiconductor device in embodiment of this invention. It is a figure which shows an example of the manufacturing process of the semiconductor device in embodiment of this invention.

Explanation of symbols

100 Semiconductor substrate 102 Pad 104 Resist 106 Mask

Claims (12)

  A resist developer containing at least one compound selected from the group consisting of triazole, imidazole, thiazole, thiadiazole, and derivatives thereof. In the resist developer according to claim 1,
The resist developer, wherein the compound is benzotriazole or a derivative thereof. In the resist developer according to claim 1 or 2,
A resist developer further comprising an acetylene glycol surfactant. In the resist developer according to claim 3,
A resist developer further comprising a nonionic surfactant different from the acetylene glycol surfactant. In the resist developer according to any one of claims 1 to 4,
A resist developer further comprising an amine compound. In the resist developer according to claim 5,
The amine compound is a resist developer containing amino alcohol. In the resist developer according to any one of claims 1 to 6,
A resist developer further comprising a linear polyhydric alcohol. In the resist developer according to claim 7,
The resist developing solution, wherein the linear polyhydric alcohol is a divalent to decavalent linear alcohol. In the resist developer according to any one of claims 1 to 8 ,
A resist developer further comprising an alkaline compound which is tetraalkylammonium hydroxide or 2-hydroxyethyltrimethylammonium hydroxide. Forming a resist on the semiconductor substrate on which the metal member is formed;
Irradiating the resist with light or an electron beam;
Developing the resist with the resist developer according to any one of claims 1 to 9 ,
Including
A method of manufacturing a semiconductor device, wherein the resist developer contacts at least a part of the metal member in the step of developing with the resist developer. In the manufacturing method of the semiconductor device according to claim 10 ,
In the step of forming the resist, the resist is formed on the metal member,
A method of manufacturing a semiconductor device, wherein, in the step of developing with the resist developer, at least a part of the metal member covered with the resist is exposed. In the manufacturing method of the semiconductor device according to claim 10 or 11 ,
The said resist is a manufacturing method of the semiconductor device containing an epoxy resin composition.

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