JP4367715B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4367715B2 JP4367715B2 JP2006075768A JP2006075768A JP4367715B2 JP 4367715 B2 JP4367715 B2 JP 4367715B2 JP 2006075768 A JP2006075768 A JP 2006075768A JP 2006075768 A JP2006075768 A JP 2006075768A JP 4367715 B2 JP4367715 B2 JP 4367715B2
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- Prior art keywords
- voltage
- power supply
- static memory
- line
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 230000003068 static effect Effects 0.000 claims description 59
- 230000003071 parasitic effect Effects 0.000 claims description 8
- 210000004027 cell Anatomy 0.000 description 186
- 230000007423 decrease Effects 0.000 description 19
- 230000035945 sensitivity Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000003321 amplification Effects 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 6
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 102100036738 Guanine nucleotide-binding protein subunit alpha-11 Human genes 0.000 description 1
- 101100283445 Homo sapiens GNA11 gene Proteins 0.000 description 1
- 101001090688 Homo sapiens Lymphocyte cytosolic protein 2 Proteins 0.000 description 1
- 102100034709 Lymphocyte cytosolic protein 2 Human genes 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000020411 cell activation Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Images
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- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006075768A JP4367715B2 (ja) | 1995-06-02 | 2006-03-20 | 半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13634995 | 1995-06-02 | ||
JP2006075768A JP4367715B2 (ja) | 1995-06-02 | 2006-03-20 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP02757496A Division JP4198201B2 (ja) | 1995-06-02 | 1996-02-15 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008286807A Division JP2009026461A (ja) | 1995-06-02 | 2008-11-07 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006179181A JP2006179181A (ja) | 2006-07-06 |
JP2006179181A5 JP2006179181A5 (enrdf_load_stackoverflow) | 2007-06-14 |
JP4367715B2 true JP4367715B2 (ja) | 2009-11-18 |
Family
ID=36733092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006075768A Expired - Fee Related JP4367715B2 (ja) | 1995-06-02 | 2006-03-20 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4367715B2 (enrdf_load_stackoverflow) |
-
2006
- 2006-03-20 JP JP2006075768A patent/JP4367715B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006179181A (ja) | 2006-07-06 |
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