JP4360825B2 - 半導体装置の寿命予測方法 - Google Patents
半導体装置の寿命予測方法 Download PDFInfo
- Publication number
- JP4360825B2 JP4360825B2 JP2003115611A JP2003115611A JP4360825B2 JP 4360825 B2 JP4360825 B2 JP 4360825B2 JP 2003115611 A JP2003115611 A JP 2003115611A JP 2003115611 A JP2003115611 A JP 2003115611A JP 4360825 B2 JP4360825 B2 JP 4360825B2
- Authority
- JP
- Japan
- Prior art keywords
- stress
- single transistor
- current
- voltage
- current value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 105
- 238000000034 method Methods 0.000 title claims description 53
- 230000006866 deterioration Effects 0.000 claims description 98
- 230000015556 catabolic process Effects 0.000 claims description 59
- 238000006731 degradation reaction Methods 0.000 claims description 59
- 230000001052 transient effect Effects 0.000 claims description 36
- 230000001133 acceleration Effects 0.000 claims description 20
- 230000035882 stress Effects 0.000 description 183
- 238000012360 testing method Methods 0.000 description 123
- 238000007689 inspection Methods 0.000 description 31
- 238000010998 test method Methods 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 19
- 238000013461 design Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 17
- 230000032683 aging Effects 0.000 description 13
- 239000000969 carrier Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000002784 hot electron Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003115611A JP4360825B2 (ja) | 2002-04-24 | 2003-04-21 | 半導体装置の寿命予測方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002123269 | 2002-04-24 | ||
| JP2003115611A JP4360825B2 (ja) | 2002-04-24 | 2003-04-21 | 半導体装置の寿命予測方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004004049A JP2004004049A (ja) | 2004-01-08 |
| JP2004004049A5 JP2004004049A5 (https=) | 2006-05-18 |
| JP4360825B2 true JP4360825B2 (ja) | 2009-11-11 |
Family
ID=30447400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003115611A Expired - Fee Related JP4360825B2 (ja) | 2002-04-24 | 2003-04-21 | 半導体装置の寿命予測方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4360825B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7495519B2 (en) * | 2007-04-30 | 2009-02-24 | International Business Machines Corporation | System and method for monitoring reliability of a digital system |
| DE102008059502A1 (de) * | 2008-11-28 | 2010-06-10 | Advanced Micro Devices, Inc., Sunnyvale | Kompensation der Leistungsbeeinträchtigung von Halbleiterbauelementen durch Anpassung des Tastgrades des Taktsignals |
| CN104122492B (zh) * | 2014-07-24 | 2016-10-05 | 北京大学 | 一种预测半导体器件10年寿命对应的工作电压的方法 |
-
2003
- 2003-04-21 JP JP2003115611A patent/JP4360825B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004004049A (ja) | 2004-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6087892A (en) | Target Ion/Ioff threshold tuning circuit and method | |
| US5625288A (en) | On-clip high frequency reliability and failure test structures | |
| EP2884663B1 (en) | Restoring OFF-state stress degradation of threshold voltage | |
| US6815970B2 (en) | Method for measuring NBTI degradation effects on integrated circuits | |
| Gao et al. | Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation | |
| Feil et al. | Gate switching instability in silicon carbide MOSFETs—Part I: Experimental | |
| Uraoka et al. | Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope | |
| CN101963650B (zh) | 用于评估集成电路的可靠性的方法和系统 | |
| Uraoka et al. | Reliability of low temperature poly-silicon TFTs under inverter operation | |
| US7292955B2 (en) | Method and apparatus for examining semiconductor apparatus and method for designing semiconductor apparatus | |
| JP4360825B2 (ja) | 半導体装置の寿命予測方法 | |
| Garba-Seybou et al. | New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes | |
| US9599656B2 (en) | Methods, apparatus and system for voltage ramp testing | |
| Toyota et al. | Effects of the timing of AC stress on device degradation produced by trap states in low-temperature polycrystalline-silicon TFTs | |
| US6777708B1 (en) | Apparatus and methods for determining floating body effects in SOI devices | |
| Mazza et al. | Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown | |
| Stojadinović et al. | Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress | |
| Tosic et al. | Transmission line model testing of top-gate amorphous silicon thin film transistors | |
| Lee et al. | A Study of High Voltage NMOSFET degradation for NAND HVSW circuit | |
| Kerber et al. | Ring oscillator aging characterization in conventional CMOS technologies | |
| Uraoka et al. | Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope | |
| Gao | Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs | |
| KR20090007056A (ko) | 박막 트랜지스터의 검사방법 | |
| Aresu et al. | Physical understanding and modelling of new hot-carrier degradation effect on PLDMOS transistor | |
| He et al. | On the Unusual HCI Degradation of Nanoscale Back-Bias RFETs in 22nm FDSOI Technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060328 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060328 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090407 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090608 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090608 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090811 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090811 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120821 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120821 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120821 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130821 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |