JP4360825B2 - 半導体装置の寿命予測方法 - Google Patents
半導体装置の寿命予測方法 Download PDFInfo
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- JP4360825B2 JP4360825B2 JP2003115611A JP2003115611A JP4360825B2 JP 4360825 B2 JP4360825 B2 JP 4360825B2 JP 2003115611 A JP2003115611 A JP 2003115611A JP 2003115611 A JP2003115611 A JP 2003115611A JP 4360825 B2 JP4360825 B2 JP 4360825B2
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- 238000000034 method Methods 0.000 title claims description 53
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- 230000015556 catabolic process Effects 0.000 claims description 59
- 238000006731 degradation reaction Methods 0.000 claims description 59
- 230000001052 transient effect Effects 0.000 claims description 36
- 230000001133 acceleration Effects 0.000 claims description 20
- 230000035882 stress Effects 0.000 description 183
- 238000012360 testing method Methods 0.000 description 123
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- 239000010409 thin film Substances 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003115611A JP4360825B2 (ja) | 2002-04-24 | 2003-04-21 | 半導体装置の寿命予測方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002123269 | 2002-04-24 | ||
| JP2003115611A JP4360825B2 (ja) | 2002-04-24 | 2003-04-21 | 半導体装置の寿命予測方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004004049A JP2004004049A (ja) | 2004-01-08 |
| JP2004004049A5 JP2004004049A5 (enExample) | 2006-05-18 |
| JP4360825B2 true JP4360825B2 (ja) | 2009-11-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003115611A Expired - Fee Related JP4360825B2 (ja) | 2002-04-24 | 2003-04-21 | 半導体装置の寿命予測方法 |
Country Status (1)
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| JP (1) | JP4360825B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7495519B2 (en) * | 2007-04-30 | 2009-02-24 | International Business Machines Corporation | System and method for monitoring reliability of a digital system |
| DE102008059502A1 (de) * | 2008-11-28 | 2010-06-10 | Advanced Micro Devices, Inc., Sunnyvale | Kompensation der Leistungsbeeinträchtigung von Halbleiterbauelementen durch Anpassung des Tastgrades des Taktsignals |
| CN104122492B (zh) * | 2014-07-24 | 2016-10-05 | 北京大学 | 一种预测半导体器件10年寿命对应的工作电压的方法 |
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- 2003-04-21 JP JP2003115611A patent/JP4360825B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2004004049A (ja) | 2004-01-08 |
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