JP4359696B2 - 微細構造形成実験方法 - Google Patents
微細構造形成実験方法 Download PDFInfo
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- JP4359696B2 JP4359696B2 JP2005319845A JP2005319845A JP4359696B2 JP 4359696 B2 JP4359696 B2 JP 4359696B2 JP 2005319845 A JP2005319845 A JP 2005319845A JP 2005319845 A JP2005319845 A JP 2005319845A JP 4359696 B2 JP4359696 B2 JP 4359696B2
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Description
E=Hm−(Hr+D) (1)
この値をエッチング時間で除することによりエッチングレートを算出することができる。このような基準面の高さを基準とした絶対的高さの測定を行うことにより、正確なエッチングレートの算出が可能となる。
12 SiO2マスク
13 加工変質層
Claims (3)
- 単結晶シリコン材料表面にエッチングマスクとして機能する微細構造表面を、摩擦力顕微鏡機構を用いた微細加工により形成し、その後エッチング液を用いてマスク以外の部分を溶解して、ナノメータスケールの微細構造を形成する加工法における、加工条件に関する基礎的データを収集するための実験を行う際に、
前記微細構造形成部分に近接して前記エッチングによる除去が全くなされない基準面を予め形成し、
前記基準面を参照して前記エッチングマスクとして機能する微細構造表面部分、及び前記エッチング液を用いて溶解するマスク以外の部分のエッチングレートを測定することを特徴とする微細構造形成実験方法。 - 前記基準面は、前記エッチング液で全く除去されない基準面マスクパターンであることを特徴とする請求項1記載の微細構造形成実験方法。
- 前記基準面を複数備え、各基準面または基準面の群に異なる識別子を表示したことを特徴とする請求項1記載の微細構造形成実験方法。
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JP2005319845A JP4359696B2 (ja) | 2005-11-02 | 2005-11-02 | 微細構造形成実験方法 |
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JP2005319845A JP4359696B2 (ja) | 2005-11-02 | 2005-11-02 | 微細構造形成実験方法 |
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JP2003293751A Division JP3785463B2 (ja) | 2003-08-15 | 2003-08-15 | 微細構造作製方法 |
Publications (2)
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JP2006128706A JP2006128706A (ja) | 2006-05-18 |
JP4359696B2 true JP4359696B2 (ja) | 2009-11-04 |
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JP2005319845A Expired - Fee Related JP4359696B2 (ja) | 2005-11-02 | 2005-11-02 | 微細構造形成実験方法 |
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