JP4353866B2 - Laser heating device - Google Patents

Description

  The present invention relates to a laser heating apparatus that condenses laser light emitted from, for example, a semiconductor laser and performs heat treatment such as soldering, resin bonding, and welding with the collected laser light.

Conventionally, there is a laser heating device as a device for performing a non-contact heat treatment using a laser beam, which is disclosed in Patent Document 1, for example.
The laser heating equipment (laser heating apparatus) includes a plurality of laser diode modules comprising a stack of laser diode (semiconductor laser array), a power source for supplying power to the laser diode module, a plurality of laser diodes included in the laser diode module The first optical system (collimating lens) that collimates the emitted laser light and the second optical system (condensing lens) that condenses the collimated laser light.

With this configuration, the laser light emitted from the laser diode is collimated by the collimator lens, and the collimated laser light is collected by the condenser lens.
In this way, heat treatment such as soldering or welding can be performed on the object to be heated placed at the focal point by the focused laser beam.
JP 2002-9388 A

  However, according to the configuration of the above conventional laser heating equipment (laser heating device), a plurality of laser beams emitted from the laser diode module are condensed into a long line by the condenser lens, and are actually resin-bonded or metal-bonded. Since it could not be transformed into the shape necessary for performing heating, it was not possible to cope with heated objects having various sizes and shapes, and heating such as soldering or welding performed on the heated objects Processing takes time and there is a problem that the efficiency of soldering is lowered.

  Accordingly, an object of the present invention is to provide a laser heating apparatus capable of improving the efficiency of soldering by deforming the shape of a laser beam condensing portion into a desired shape.

In order to achieve the above object, a laser heating apparatus according to claim 1 of the present invention is a laser heating apparatus that emits a laser beam for dissolving a substance, and emits light in a slow direction with respect to a light emission width in a first direction. A first one-chip semiconductor laser light source having an emission part that emits a laser beam centered on the first optical axis center, and a shape having a longer emission width in the slow direction than the emission width in the first direction And a second one-chip semiconductor laser light source having a light emitting portion that emits laser light having a slow direction inclined from the first optical axis center, the second optical axis center being orthogonal to the first optical axis center. , in front of the first one-chip semiconductor laser light source and the second one-chip semiconductor laser light sources are arranged around the intersection between the first optical axis center and the second optical axis center, before A prism for adding the laser beam emitted from the laser light emitted from the first one-chip semiconductor laser light source second one-chip semiconductor laser light source, distribution centered on the said first optical axis center in front of the prism An aspherical lens disposed; and two cylindrical lenses disposed around the first optical axis center between the aspherical lens and the substance , the first one-chip semiconductor laser light source, The second one-chip semiconductor laser light source, the prism, and the aspherical lens cause the laser light from the first one-chip semiconductor laser light source and the second one-chip semiconductor laser light source to each fast direction by the aspherical lens. The aspherical lens has a predetermined F value that the aspherical lens has. The first one-chip semiconductor laser and the emission portion of the light source is disposed above so that the distance to the aspherical lenses are fit, the first one-chip semiconductor laser light source and the second one-chip semiconductor laser emitting laser from the light source light, said prism, said by Rukoto is irradiated onto the aspheric lens and the two cylindrical lenses on the material through the cross-shaped spot is formed on the material, the two cylindrical lenses, the Each of the positions of the cross-shaped spots is adjusted on the first optical axis center so that a desired shape is obtained .

Since the laser heating device of the present invention can easily determine the irradiation center by making the spot shape of the laser light irradiated to the material to be processed a cross shape, the optimum solder for the object to be processed The soldering can be performed, and thus the soldering efficiency can be improved.

Below, the laser heating apparatus in each embodiment of the present invention will be described with reference to the drawings. The direction in which the laser beam is emitted from the laser heating device is the front direction, the direction opposite to the front direction is the rear direction, the front-rear direction X and the direction perpendicular to the horizontal plane are the left-right direction Y , and the laser emission direction (front the left-hand side to the left direction oriented in the direction). The vertical direction is Z. Further, the distance (working distance) from the tip of the lens holding part to the light collecting part is defined as a work distance (hereinafter referred to as WD).
(Embodiment 1)
Below, the laser heating apparatus in Embodiment 1 of this invention is demonstrated, referring drawings.

FIG. 1 shows the configuration of the laser heating apparatus according to Embodiment 1 of the present invention.
As shown in FIGS. 1 (a) and 1 (b), a laser heating device 1 that emits a laser beam that dissolves a substance toward a laser beam condensing unit is an alumite-treated aluminum alloy (Al alloy). The holder 2 formed by the holder body 2A formed by the above and the holder cover 2B mounted on the upper part of the holder body 2A, and the heat conduction provided on the left and right side surfaces and the lower surface of the inner surface of the holder body 2A an insulating sheet 3, in Ji Mushito provided on the lower surface of the holder cover 2B (hereinafter, in that the seat) and 4, each heat conductive insulating sheet 3 and in sheet 4 and contact with is provided a heat sink (copper block ) 5 and a 1 W or more watt having a light emitting portion 8 that is fixed to the front surface of the heat sink 5 by a fixing screw 6 and emits the laser light L around the optical axis center 7. A class-one one-chip semiconductor laser (LD) (an example of a watt-class one-chip semiconductor laser light source) 9 and an optical axis center 7 disposed in front of the holder 2, and from an emitting portion 8 of the watt-class one-chip semiconductor laser 9 An aspherical lens (aspherical convex lens) 10 that condenses the emitted laser light L in the first direction, and the aspherical lens 10 are held, and a visible light cut filter 11A is provided at a position in front of the aspherical lens 10. The lens holding portion 11, the positive power supply line 12 A connected to the heat sink 5, the first negative power supply line 12 B connected to the heat sink 5, and the first connected to the watt-class one-chip semiconductor laser 9. Built in power cable 12 with 2 minus power line 12C and heat sink 5, watt class Thermistor (an example of a temperature sensor) 13A for measuring the temperature of the on-chip semiconductor laser 9, the thermistor cable (an example of the temperature sensor cable) 13 connected to the thermistor 13A, and the watt-class one-chip semiconductor laser 9 14A for detecting the return light of the laser beam L to be transmitted, a cable for photodiode (an example of a cable for optical sensor) 14 connected to the photodiode 14A, and each corner of the holder cover 2B It is provided with a mounting screw 16 or the like which is provided in the vertical direction Z and attaches the holder 2 to the mounting plate 15 or the like. When the cables 12, 13, and 14 are inserted into the holder 2, a black seal material 17 is provided at the insertion portion of the cables 12, 13, and 14 in the holder 2, and the cables 12, 13, and 14 are fixed. Has been.

  Note that the emission portion 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. The aspheric lens 10 has a numerical aperture NA of 0.3.

  The lens holding unit 11 includes an adjusting unit (not shown), and the position of the aspherical lens 10 on the optical axis center 7 can be adjusted in the front-rear direction by the adjusting unit.

Hereinafter, the operation in the first embodiment will be described with reference to FIG.
As shown in FIG. 2A, the F value of the aspheric lens 10 disposed in the lens holding unit 11 is
F = (L1 × L2) / (L1 + L2) (1)
L1: Distance from the emitting portion 8 to the focal position N of the aspherical lens 10
L2: It can be obtained from the distance from the focal position N of the aspherical lens 10 to the condenser M.

Here, when L1 = 10 mm and L2 = 40 mm, since F = (10 × 40) / (10 + 40) = 8, the aspherical lens 10 of F8 is used.
And when the aspherical lens 10 of F8 is used, the width H2 in the slow direction at the condensing part M is:
H2 = {(L2-F) / F} H1 (2)
H1: It can be obtained from the light emission width in the slow direction at the emitting portion 8. Note that {(L2-F) / F} indicates a magnification.

Here, when H1 = 0.5 mm, H2 = {(40−8) / 8} 0.5 = 4 × 0.5 = 2 mm.
Further, the width h2 in the fast direction in the light condensing part M is 4 μm because it is obtained by multiplying 1 μm, which is the light emission width h1 in the fast direction in the emitting part 8, by the above magnification.

  In this way, the distance L1 from the emitting portion 8 to the focal position N of the aspherical lens 10 and the distance L2 from the focal position N of the aspherical lens 10 to the condensing portion M are adjusted and arranged on the lens holding portion 11. By appropriately determining the F value of the aspherical lens 10 to be formed, the width in the slow direction of the condensing part M formed at a position away from the aspherical lens 10 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more. Since H2 is appropriately changed, the line shape of the laser light L in the light condensing part M is deformed.

  Further, as the watt-class one-chip semiconductor laser 9, a watt-class one-chip semiconductor laser of 3 W or more with a light emission width in the slow direction of 100 μm is used, and the aspheric lens 10 has an aspheric surface with an F value of F7 to F9. By using a lens and adjusting the position of this aspheric lens in the front-rear direction on the optical axis center by the adjusting means of the lens holding unit 11, the shape of the laser beam in the condensing unit M with a WD of 20 mm or more is obtained. The condensing width in the slow direction can be deformed into a line shape or a square shape with 300 μm or more. Further, the position adjustment is performed in the same manner as described above, and defocusing is performed by using aberration in the fast direction and the slow direction, and the aspect ratio of the shape of the laser beam in the condensing unit M (the length in the left-right direction Y and the vertical direction Z) By adjusting the length ratio) or by using the astigmatic difference between the fast direction and the slow direction, the shape of the laser light in the condensing part M can be changed to a round shape or an elliptical shape.

In addition, for example, a collimating lens, a PBS prism, and an aspherical lens (plano-convex lens) having an F value of 25 or more are provided in the lens holding unit 11 in order from the emission unit 8 centering on the optical axis center 7. If a condensing lens and a CCD camera are provided above the laser beam L in the first direction emitted from the emitting unit 8, it is collimated by a collimating lens, and after passing through a PBS prism, is condensed by an aspheric lens. The At this time, the return light of the laser light L is reflected by the PBS prism and condensed on the CCD camera by the condenser lens. Thereby, the condensing part of the laser beam L can be confirmed with a CCD camera. The collimating lens, the aspherical lens, and the condenser lens are arranged so that the aspherical part of each lens is on the PBS prism side.

  As described above, according to the first embodiment, the distance L1 from the emitting unit 8 to the focal position N of the aspherical lens 10 and the distance L2 from the focal position N of the aspherical lens 10 to the condensing unit M are changed. By changing the F value by using the aspherical lens 10 having this F value, the width H2 in the slow direction in the condensing part M can be changed, and the shape of the laser light L in the condensing part M is desired. Because it can be deformed into the shape of the above, it is easy to perform multi-point simultaneous soldering on heated parts such as flexible printed wiring board connectors (FPC connectors) and electronic devices. Efficiency can be improved.

  Further, according to the first embodiment, since the aspherical lens 10 having a numerical aperture NA of 0.3 is used, the loss is caused, that is, the rate at which the laser light L leaks from the aspherical lens 10 is about 10%. Can be suppressed.

  In the first embodiment, the emission part 8 of the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. Alternatively, a watt-class one-chip semiconductor laser 9 having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the first embodiment, the aspherical lens 10 has an F value indicating the lens brightness of F8 and a numerical aperture NA of 0.3, but the F value may be in the range of F4 to F9. The numerical aperture NA may be 0.3 or more.
(Embodiment 2)
Below, the laser heating apparatus in Embodiment 2 of this invention is demonstrated, referring drawings.

  The configuration of the laser heating device in Embodiment 2 of the present invention will be described. The configuration of the laser heating apparatus in the second embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 3, the lens holding portion (not shown) is disposed in front of the watt-class one-chip semiconductor laser 9 with the optical axis center 7 as the center, and has an F value of F8 and a numerical aperture NA. 0.3, a first aspheric lens 21 that collimates the laser light L emitted from the watt-class one-chip semiconductor laser 9 in the fast direction and the slow direction, and the optical axis center 7 in front of the first aspheric lens 21. A second aspherical lens 22 that is arranged at the center and has an F value of F14.5 and condenses the laser light L in the first direction collimated by the first aspherical lens 21 is provided.

The emission part 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm.
The aspheric lenses 21 and 22 are arranged such that the aspheric surfaces 21A and 22A face each other.

Hereinafter, the operation in the second embodiment will be described with reference to FIG.
First, the combined F value of the first aspheric lens 21 and the second aspheric lens 22 is
F = (F1 × F2) / (F1 + F2-d) (3)
F1: F value of the first aspherical lens 21
F2: F value of the second aspherical lens 22
d: the focal position N1 of the first aspheric lens 21 and the second aspheric lens 22;
Can be obtained from the distance to the focal position N2.

Therefore, when d = 8 mm, F = (8 × 14.5) / (8 + 14.5−8) = 8, so the combined F value of the first aspherical lens 21 and the second aspherical lens 22 is 8
And if this synthetic | combination F value is substituted into following formula (4), the width | variety H2 of the slow direction in the condensing part M will be given by
H2 = {(L2-F) / F} H1 (4)
H1: Light emission width in the slow direction at the emission part 8
L2: It can be obtained from the distance from the focal position N2 of the second aspherical lens 22 to the condenser M. Note that {(L2-F) / F} indicates a magnification.

  Here, when L2 = 30 mm, H2 = {(30−8) / 8} 0.5 = 2.75 × 0.5 = 1.375 mm, and the width h2 in the fast direction of the light collecting portion M is Since the above-mentioned magnification is multiplied by 1 μm, which is the light emission width h1 in the first direction in the emission part 8, it is 2.75 μm.

  Thus, by adjusting the combined F value of the first aspherical lens 21 and the second aspherical lens 22 and the distance L2 from the focal position N2 of the second aspherical lens 22 to the condensing part M, the second Since the width H2 in the slow direction of the condensing part M formed at a position away from the aspherical lens 22 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more is appropriately changed, the laser light in the condensing part M The line shape of L is deformed.

  As described above, according to the second embodiment, from the distance d between the focal position N1 of the first aspherical lens 21 and the focal position N2 of the second aspherical lens 22, and the focal position N2 of the second aspherical lens 22. By changing the distance L2 to the condensing part M, the width H2 of the condensing part M in the slow direction can be changed, and the shape of the laser light L in the condensing part M is deformed into a desired line shape. Therefore, multi-point simultaneous soldering can be easily performed on a heated part such as a flexible printed wiring board connector (FPC connector) or an electronic device, thereby improving the efficiency of soldering. it can.

In the second embodiment, the emission part 8 of the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. Alternatively, a watt-class one-chip semiconductor laser 9 having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the second embodiment, the first aspheric lens 21 has an F value indicating the lens brightness of F8 and a numerical aperture NA of 0.3. However, the F value may be in the range of F4 to F9. Bayoku, also numerical aperture NA may be at least 0.3.

In the second embodiment, the second aspherical lens 22 has an F value indicating brightness of F14.5, but the F value may be in the range of F3 to F50.
(Embodiment 3)
Hereinafter, a laser heating apparatus according to Embodiment 3 of the present invention will be described with reference to the drawings.

  The structure of the laser heating apparatus in Embodiment 3 of this invention is demonstrated. The configuration of the laser heating apparatus in the third embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 4, the lens holding part (not shown) is arranged in front of the watt-class one-chip semiconductor laser 9 with the optical axis center 7 as the center, the F value is F8, and the numerical aperture NA is. 0.3, an aspherical lens 31 for collimating the laser beam L in the fast direction emitted from the watt-class one-chip semiconductor laser 9, and an aspherical lens 31 disposed in front of the aspherical lens 31 with the optical axis center 7 as the center. Is a cylindrical lens 32 that condenses the laser light L in the fast direction collimated by the aspherical lens 31 and collimates the laser light L in the slow direction.

Note that the emission portion 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm.
The aspherical lens 31 and the cylindrical lens 32 are arranged so that the aspherical portions 31A and 32A face each other.

Hereinafter, the operation in the third embodiment will be described with reference to FIGS.
First, the width H2 in the slow direction at the processing point P is
H2 = {(L2-F) / F} H1 (5)
L2: Distance from the focal position N1 of the aspherical lens 31 to the processing point P
F: F value of the aspherical lens 31
H1: It can be obtained from the light emission width in the slow direction at the emitting portion 8.

  Thus, for example, when L2 = 50 mm, H2 = {(50−8) / 8} 0.1 = 0.525≈0.52 mm, and when L2 = 45 mm, H2 = {(45−8 )}} 0.1 = 0.625≈0.46 mm.

  Here, in order to make the shape of the laser beam L at the processing point P a square spot, the width h2 in the fast direction at the processing point P must be the same as the width H2 in the slow direction at the processing point P, that is, H2. = H2.

At this time, the similarity formula in the first direction is
h2: (L2-F2-d) = D: F2 (6)
h2: width in the first direction at the processing point P
F2: From the focal position N2 of the cylindrical lens 32 to the condenser M
distance
d: Cylindrical lens 3 from the focal position N1 of the aspherical lens 31
Distance to 2 focal position N2
D: Maximum in the first direction of the laser light L in the aspheric lens 31
The above formula (6) is transformed into h2 × F2 = (L2−F2) D−dD. From this formula, d = {(L2−F2) D−h2 × F2} / D (7) )
Is derived.

  Here, when L2 = 50 mm, F2 = 40 mm, and D = 6 mm, the shape of the laser beam L at the processing point P is a square spot with one side calculated as above, that is, h2 = H2 = 0.52 mm. When the square spot is formed, the distance d from the focal position N1 of the aspherical lens 41 to the focal position N2 of the cylindrical lens 32 is d≈6.8 mm from the above equation (7).

Further , when L 2 = 45 mm, F 2 = 40 mm, and D = 6 mm, the shape of the laser light L at the processing point P is a square spot with one side calculated as described above, that is, h 2 = H 2 = 0. When a 46 mm square spot is formed, the distance d from the focal position N1 of the aspherical lens 31 to the focal position N2 of the cylindrical lens 32 is d≈1.9 mm from the above equation (7).

  Thus, by setting in advance the length (width) of one side of the square spot to be formed at the processing point P, and adjusting the distance d from the focal position N1 of the aspherical lens 31 to the focal position N2 of the cylindrical lens 32. A square spot of a desired size is obtained at the processing point P.

  As described above, according to the third embodiment, as shown in FIG. 5, when the workpiece 35 of the land 34 provided on the epoxy substrate 33 is processed, the light converging part M is connected to the workpiece 35 ( By adjusting so as to be generated before the processing point P) and irradiating the workpiece 35 with the processing point P formed in a square spot (square shape), the optimum soldering to the workpiece 35 is achieved. At the same time, since the epoxy substrate 33 is irradiated with the laser beam L defocused behind the processing point P, it is possible to optimally solder the workpiece 35 without scorching the epoxy substrate 33. Therefore, the efficiency of soldering can be improved.

In the third embodiment, the emission part 8 of the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. Alternatively, a watt-class one-chip semiconductor laser 9 having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the third embodiment, the aspherical lens 31 has an F value indicating the lens brightness of F8 and a numerical aperture NA of 0.3, but the F value may be in the range of F4 to F9. The numerical aperture NA may be 0.3 or more.

In the third embodiment, the F-number indicating the brightness of the cylindrical lens 32 is F40, but the F-value may be in the range of F10 to F50.
(Embodiment 4)
Hereinafter, a laser heating apparatus according to Embodiment 4 of the present invention will be described with reference to the drawings.

  The structure of the laser heating apparatus in Embodiment 4 of this invention is demonstrated. Since the configuration of the laser heating apparatus in the fourth embodiment is substantially the same as that in the first embodiment, detailed description thereof will be omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 6, the laser heating apparatus according to the fourth embodiment is a first watt-class one-chip semiconductor laser (first radiating laser beam L1 centered on the first optical axis center 41B in the front-rear direction X). An example of a one-watt class one-chip semiconductor laser light source) 41 and a laser beam arranged in a direction orthogonal to the first optical axis center 41B, that is, in the left-right direction Y, and centered on the second optical axis center 42B in the left-right direction Y. A first optical axis center in front of the second watt-class one-chip semiconductor laser (an example of a second watt-class one-chip semiconductor laser light source) 42 that emits the light L2 and the first watt-class one-chip semiconductor laser 41 in the laser emission direction. The first aspherical lens 43, which is arranged around 41B and collimates the laser beam L1, and the laser output of the second watt-class one-chip semiconductor laser 42. The first optical axis in front of the second aspherical lens 44 centered on the second optical axis center 42B in the direction, the first aspherical lens 43 and the second aspherical lens 44 in the laser emission direction. A PBS prism (also called a polarization beam splitter) (an example of a prism) 45 that is arranged around the intersection of the center 41B and the second optical axis center 42B and adds the laser light L1 and the laser light L2, and a laser of the PBS prism 45 It is arranged in front of the emission direction with the first optical axis center 41B as the center, and includes a condenser lens 46 that condenses the laser beams L1 and L2 from the PBS prism 45, and the like.

  The first watt-class one-chip semiconductor laser 41 is arranged so that the first direction of the emission part 41A is the left-right direction Y, and the second watt-class one-chip semiconductor laser 42 is the slow direction (polarization direction) of the emission part 42A. Are arranged in the front-rear direction X.

  The emission portions 41A and 42A formed in the watt-class one-chip semiconductor lasers 41 and 42 have a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 0.5 μm, respectively. It is 5 μm.

Hereinafter, the operation in the fourth embodiment will be described with reference to FIG.
The focal position of the first aspherical lens 43 is N1, the focal position of the second aspherical lens 44 is N2, the distance from the emitting part 41A of the first watt class one-chip semiconductor laser 41 to the focal position N1 is f ₁ , the distance from the emitting portion 42A of the watt one-chip semiconductor laser 42 to the focal position N2 and f _2.

Here, the first aspheric lens 43 is moved back and forth on the first optical axis center 41B so that the F value of the first aspheric lens 43 and the second aspheric lens 44 is F = f ₁ = f _2. The second aspheric lens 44 is moved back and forth on the second optical axis center 42B.

  As a result, as shown in FIG. 6A, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 41 is emitted from the first watt class one-chip semiconductor laser 41 in the first direction (left-right direction Y). The laser beam L1 thus focused is collimated in the fast direction and collimated, and reaches the condensing unit M via the condensing lens 46 in a collimated state. The laser beam L2 emitted from the second watt-class one-chip semiconductor laser 42 is reflected by the PBS prism 45 and then reaches the condensing unit M via the condensing lens 46 in a collimated state.

  As shown in FIG. 6B, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 41 is emitted from the first watt class one-chip semiconductor laser 41 in the slow direction (vertical direction). The laser beam L1 is collimated by the condenser lens 46. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 42 is focused in the fast direction, collimated, reflected by the PBS prism 45, and then condensed by the condenser lens 46.

  Thereby, the laser light L1 in the condensing part M is collimated in the slow direction and is condensed in the fast direction, and the laser light L2 in the condensing part M is condensed in the slow direction (laser light L1). At the same time, since it is collimated in the fast direction (of the laser beam L1), a regular cross spot is obtained at the condensing part M.

When the distance f1 = F and the distance f2> F, the laser light L1 in the condensing unit M is collimated in the slow direction and condensed in the fast direction, and the laser light L2 in the condensing unit M is Since the light is condensed in the slow direction (of the laser light L1) and diffused in the fast direction (of the laser light L1), a cross-shaped spot that is long in the left-right direction is obtained in the light condensing part M.

When distance f1> F and distance f2 = F, the laser light L1 in the condensing part M is diffused in the slow direction and condensed in the fast direction, and the laser light L2 in the condensing part M is Since the light is condensed in the slow direction (of the laser light L1) and collimated in the fast direction (of the laser light L1), a long cross-shaped spot is obtained in the light converging part M in the vertical direction.

As described above, by appropriately changing the distances f ₁ and f ₂ , the condensing unit M formed at a position away from the condensing lens 46 by 20 mm or more, that is, the condensing unit M having a WD of 20 mm or more, A cruciform spot having a line width of 10 to 50 μm and a line length of 100 to 500 μm is formed.

  As described above, according to the fourth embodiment, it is possible to obtain a cruciform spot in the condensing part M, and to easily determine the irradiation center, so that optimal soldering is performed on the workpiece. Therefore, the efficiency of soldering can be improved.

  Further, according to the fourth embodiment, as shown in FIG. 7, when the workpieces A and B are joined, the margin of irradiation deviation can be increased, and therefore the irradiation center S is shifted. However, the workpieces A and B can be heated with a high-density laser beam.

Further, according to the fourth embodiment, by changing the F value of the condensing lens 46, the spot size and WD in the condensing part can be easily changed, and the distances f ₁ and f ₂ are different values. By doing so, the aspect ratio of the cruciform spot in the condensing part M can be easily changed.
(Embodiment 5)
Hereinafter, a laser heating apparatus according to Embodiment 5 of the present invention will be described with reference to the drawings.

  The structure of the laser heating apparatus in Embodiment 5 of this invention is demonstrated. The configuration of the laser heating apparatus in the fifth embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof will be omitted. Only a different part, that is, the lens configuration of the lens holding portion will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 8, the laser heating apparatus of the fifth embodiment is a first watt-class one-chip semiconductor laser (first radiating laser beam L1 centered on the first optical axis center 51B in the front-rear direction X). An example of a 1-watt class one-chip semiconductor laser light source) 51 and a laser beam arranged in a direction orthogonal to the first optical axis center 51B, that is, in the left-right direction Y, and centered on the second optical axis center 52B in the left-right direction Y. A second watt-class one-chip semiconductor laser (an example of a second watt-class one-chip semiconductor laser light source) 52 that emits light L2, and a laser of the first watt-class one-chip semiconductor laser 51 and the second watt-class one-chip semiconductor laser 52 The laser beam L1 and the laser beam are arranged in front of the emission direction, centering on the intersection of the first optical axis center 51B and the second optical axis center 52B. A PBS prism (also called a polarization beam splitter) 53 that adds 2 (an example of a prism) 53 and the PBS prism 53 are arranged in front of the first optical axis center 51B in the laser emission direction and added by the PBS prism 53. A round convex aspherical lens (an example of an aspherical lens) 54 for condensing the laser beams L1 and L2 is used. An insulator 55 having a thickness of 0.1 mm is provided between the first watt-class one-chip semiconductor laser 51 and the second watt-class one-chip semiconductor laser 52.

  The first watt-class one-chip semiconductor laser 51 is arranged so that the first direction of the emission part 51A is the left-right direction Y, and the second watt-class one-chip semiconductor laser 52 is arranged such that the slow direction of the emission part 52A is the front-rear direction X. It is arranged to become.

  In addition, the emission portions 51A and 52A formed in the watt-class one-chip semiconductor lasers 51 and 52 have a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm, respectively. It is 5 μm.

Hereinafter, the operation in the fifth embodiment will be described with reference to FIG.
The focal position of the round-convex aspherical lens 54 is N1, the distance from the emitting part 51A of the first watt-class one-chip semiconductor laser 51 to the focal position N1 is L1, and the distance from the focal position N1 to the condensing part M is L2. .

  As shown in FIG. 8A, the laser emitted from the first watt class one-chip semiconductor laser 51 in the first direction (left-right direction Y) of the laser light L1 emitted from the first watt class one-chip semiconductor laser 51. The light L1 is collected by the round convex aspheric lens 54. Further, the laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 53, that is, added to the laser light L1, and then collimated through the round-convex aspheric lens 54. It reaches the condensing part M.

  Further, as shown in FIG. 8B, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 51 is emitted from the first watt class one-chip semiconductor laser 51 in the slow direction (vertical direction Z). The laser light L1 reaches the condensing part M through the PBS prism 53 and the round-convex aspherical lens 54 in a collimated state. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 45, that is, added to the laser light L1, and then condensed by the round-convex aspheric lens 54.

  Thereby, the laser beam L1 in the condensing part M formed at a position away from the round-convex aspherical lens 54 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more is collimated in the slow direction and fast. Condensed in the direction, and the laser light L2 in the condensing part M is condensed in the slow direction (laser light L1) and collimated in the fast direction (laser light L1). A regular cross spot is obtained at.

  Therefore, for example, when the F value of the round-convex aspheric lens 54 is F8, the distance L1 is 9.5 mm, and the distance L2 is 50 mm, the light condensing part M has a line width of 5.3 μm and a line length of 530 μm. A letter-shaped spot is formed.

  Further, assuming that the distance from the emitting portion 52A to the PBS prism 53 is d1, and the distance from the emitting portion 51A to the PBS prism 53 is d2, the size of the distance d1 and the distance d2 is changed, so The length (size) of the letter-shaped spot in the left-right direction Y and the up-down direction Z can be changed.

  Further, as shown in FIGS. 8C and 8D, the first watt-class one-chip semiconductor laser 51 is emitted on the optical axis center 51B to a predetermined F value of the round-convex aspheric lens 54. The distance from the portion 51A to the round-convex aspherical lens 54 is adjusted, the round-convex aspherical lens 54 is disposed at that position, and the round-convex disposed at the position where the distance is adjusted with the optical axis center 51B as the center. Between the aspherical lens 54 and the condensing part M, the first cylindrical lens 56 is arranged on the round-convex aspherical lens 54 side, and is arranged at a position where the distance is adjusted around the optical axis center 51B. Between the round-convex aspherical lens 54 and the condensing part M, the second cylindrical lens 57 is disposed on the condensing part M side.

  The cylindrical lenses 56 and 57 are arranged so that the aspherical portions 56A and 57A face the round-convex aspherical lens 54 side, and the first cylindrical lens 56 and the second cylindrical lens 57 have a 90-degree ridge direction. Are different, that is, the second cylindrical lens 57 is arranged in a state where the first cylindrical lens 56 is rotated by 90 degrees.

  At this time, as shown in FIG. 8C, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 51 is emitted from the first watt class one-chip semiconductor laser 51 in the first direction (left-right direction Y). The laser beam L 1 is collimated by the round convex aspheric lens 54 and then condensed by the second cylindrical lens 57. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 53, that is, added to the laser light L1, and in a collimated state, the round-convex aspherical lens 54 and the first cylindrical lens. After passing through 56, the light is collected by the second cylindrical lens 57.

  Further, as shown in FIG. 8D, the laser light L1 emitted from the first watt class one-chip semiconductor laser 51 is emitted from the first watt class one-chip semiconductor laser 51 in the slow direction (vertical direction Z). The laser light L1 is condensed by the first cylindrical lens 56 after passing through the PBS prism 53 and the round-convex aspherical lens 54. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 53, collimated by the round-convex aspheric lens 54, and then condensed by the first cylindrical lens 56. .

  Here, by adjusting the positions of the first cylindrical lens 56 and the second cylindrical lens 57 on the optical axis center 51B, that is, by moving them on the optical axis center 51B in the front-rear direction, a cross-shaped spot in the light condensing unit M is obtained. The lengths (sizes) in the left-right direction Y and the up-down direction Z can be changed, so that the shape of the laser light in the condensing part M can be changed to a desired cross-shaped spot.

  The first watt-class one-chip semiconductor laser 51 and the second watt-class one-chip semiconductor laser 52 are each fixed to a heat sink (not shown), and these heat sinks are attached to the front and rear portions of the holder body 2A. Each heat sink can be moved to a desired position by being moved in the front-rear direction X and the left-right direction Y by an adjustment tool (such as a screw) (not shown) provided.

  As described above, according to the fifth embodiment, a desired cruciform spot can be obtained in the condensing unit M, and the irradiation center can be easily determined. Therefore, the efficiency of soldering can be improved.

In addition, according to the fifth embodiment, as shown in FIG. 7, when the workpieces A and B are joined, the margin of irradiation deviation can be increased, and therefore the irradiation center S is shifted. However, the workpieces A and B can be heated with a high-density laser beam.
(Embodiment 6)
Below, the laser heating apparatus in Embodiment 6 of this invention is demonstrated, referring drawings.

  The structure of the laser heating apparatus in Embodiment 6 of this invention is demonstrated. The configuration of the laser heating apparatus in the sixth embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

As shown in FIG. 9, two emission parts 8 in the vertical direction Z are formed with a light emission width of 0.5 mm in the slow direction and a light emission width of 1 μm in the first direction and emitting laser light around the optical axis center 7. (Multiple) Stack LD 63 (an example of a watt-class one-chip semiconductor laser light source) and a lens holding part (not shown) are arranged in the vertical direction Z around the optical axis center 7 in front of the stack LD 63, respectively. Positioned approximately at the center between the stack LD 63 and the condensing part M with the two (plural) fast lenses 61 condensing the laser light L in the fast direction emitted from each emitting part 8 and the optical axis center 7 as the center. It is located where the first cylindrical lens 62 for condensing the laser beam L in the slow direction emitted from the emission part 8 of the stack LD63 is provided

Hereinafter, the operation of the sixth embodiment will be described with reference to FIG.
As shown in FIG. 9A, the F value of the first cylindrical lens 62 arranged in the lens holding portion is
F = (L1 × L2) / (L1 + L2) (1)
L1: Distance from the emitting portion 8 to the focal position N of the first cylindrical lens 62
Separation
L2: Distance from the focal position N of the first cylindrical lens 62 to the condenser M
It can be obtained by separation.

Here, for example, when L1 = 40 mm and L2 = 40 mm, F = (40 × 40) / (40 + 40) = 20, so the first cylindrical lens 62 of F20 is used.
When the first cylindrical lens 62 of F20 is used, the width H2 in the slow direction of the light condensing unit M is
H2 = {(L2-F) / F} H1 (2)
H1: It can be obtained from the light emission width in the slow direction at the emitting portion 8. Note that {(L2-F) / F} indicates a magnification.

Here, when H1 = 0.5 mm, H2 = {(40−20) / 20} 0.5 = 1 × 0.5 = 0.5 mm.
Further, the width h2 in the fast direction in the light condensing part M is 1 μm because the light emission width h1 in the fast direction in the emitting part 8 is multiplied by the above magnification.

Thus, the distance L1 from the exit section 8 to the focal position N of the first cylindrical lens 62, the focal position N of the first cylindrical lens 62 to adjust the distance L2 to the condensing unit M, the lens holding portion By appropriately determining the F value of the first cylindrical lens 62 to be disposed, the light condensing part M formed at a position separated from the first cylindrical lens 62 by 20 mm or more, that is, the slow in the light condensing part M having a WD of 20 mm or more. Since the direction width H <b> 2 is appropriately deformed, the line shape of the laser light L in the condensing part M is deformed.

  Further, as shown in FIGS. 9C and 9D, an F-number larger than that of the first cylindrical lens 62 between the fast lens 61 and the first cylindrical lens 62 with the optical axis center 7 as the center ( A second cylindrical lens 64 having F10 to F50) is arranged.

The second cylindrical lens 64 is arranged so that the aspherical surface portion 64A faces the fast lens 61 side.
At this time, as shown in FIG. 9C, the laser light in the slow direction emitted from the stack LD 63 passes through the fast lens 61 and the second cylindrical lens 64, and is then collected in a line by the first cylindrical lens 62. To be lighted.

  Further, as shown in FIG. 9D, one laser beam L1 in the fast direction emitted from the stack LD 63 is collimated by the fast lens 61 without being parallel to the optical axis center 7, and then the second cylindrical beam. The light is collected by the lens 64. The other laser beam L2 is collimated by the fast lens 61 in a state parallel to the optical axis center 7, and then condensed by the second cylindrical lens 64.

As described above, even when the alignment (position adjustment) of the fast lens 61 is deviated and the optical axis 65 of the one laser beam L1 is deviated, the position of the second cylindrical lens 64 is adjusted on the optical axis center 7. Thus, that is, by moving the optical axis center 7 in the front-rear direction, the laser light L1 can be condensed on the condensing part M, and the shape of the laser light in the condensing part M can be changed to a desired shape (for example, , Line shape, rectangular shape, etc.).

  When the first cylindrical lens 62 having an F value of 20, for example, is used as the first cylindrical lens 62, L1 = L2 = 40 mm, and the width H2 in the slow direction in the light converging part M where WD is 25 mm or more is emitted. The light emission width H1 in the slow direction in the portion 8 can be set to, for example, 0.05 mm to 0.5 mm.

  As described above, according to the sixth embodiment, the distance L1 from the emitting unit 8 to the focal position N of the first cylindrical lens 62 and the distance L2 from the focal position N of the first cylindrical lens 62 to the condensing unit M are changed. By changing the F value and using the first cylindrical lens 62 having this F value, the width H2 in the slow direction of the condensing part M can be changed. Can be deformed into a desired line shape, and a plurality of laser beams L emitted from the stack LD 63 are condensed on the condensing unit M, and a condensing degree (laser light power) in the condensing unit M is increased. Because it can be increased, simultaneous multi-point soldering to heated parts such as flexible printed wiring board connectors (FPC connectors) and electronic devices is short. It can be easily performed (fast), thus it is possible to improve the efficiency of the soldering.

In the sixth embodiment, the emission part 8 of each watt class one-chip semiconductor laser 9 in the stack LD 63 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. emission width of the slow direction 8 0.05 mm to 0.5 mm, first direction of the light-emitting width may be used watts one-chip semiconductor laser 9 of 0.5 m to 5 m.

In the sixth embodiment, the first cylindrical lens 62 has the F value indicating the brightness of the lens as F20, but the F value may be in the range of F10 to F50.
(Embodiment 7)
Next, the structure of the laser heating apparatus in Embodiment 7 of this invention shown in FIG. 10 is demonstrated . The configuration of the laser heating device in the seventh embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted. Only different portions, that is, the lens configuration of the lens holding unit and the configuration of the laser light source are described. explain. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIGS. 10A and 10B, the laser heating apparatus according to the seventh embodiment is arranged in a line on the center line 3A on the upper surface of the heat conductive insulating sheet 3 provided on the lower surface of the holder body 2A. A watt-class one-chip semiconductor laser (an example of a watt-class one-chip semiconductor laser light source) 72A, 72B, which is formed and emits laser beams L1, L2, and L3 centered on optical axis centers 71A, 71B, and 71C directed vertically upward. The heat sinks 73A, 73B, and 73C having 72C and the optical axis centers 71A, 71B, and 71C are arranged above the heat sinks 73A, 73B, and 73C, respectively, and are arranged from the watt-class one-chip semiconductor lasers 72A, 72B, and 72C. An aspherical lens 7 of F7 that collimates the emitted laser beams L1, L2, and L3 in the first direction. A, 74B, 74C, a copper step mirror (an example of laser beam adding means) 75 (above described in detail) provided above each aspheric lens 74A, 74B, 74C, and in front of the copper step mirror 75 It is provided with a condensing lens 77 of F15 that condenses the laser beams L1, L2, and L3 reflected by the copper step mirror 75.

  The copper step mirror 75 includes a 45-degree mirror 76A that reflects, that is, adds, laser light L1 emitted from the watt-class one-chip semiconductor laser 72A forward, and laser light L2 emitted from the watt-class one-chip semiconductor laser 72B. 45 degrees mirror 76B that reflects, ie, adds forward, and 45 degree mirror 76C that reflects, ie, adds, laser light L3 emitted from the watt-class one-chip semiconductor laser 72C.

Each of the watt-class one-chip semiconductor lasers 72A, 72B, and 72C has a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm.
Hereinafter, the operation in the seventh embodiment will be described with reference to FIG.

  In the fast direction, the laser beams L1, L2, and L3 emitted from the watt-class one-chip semiconductor lasers 72A, 72B, and 72C are collimated by the aspheric lenses 74A, 74B, and 74C, respectively. The collimated laser beams L1, L2, and L3 are reflected forward by the 45-degree mirrors 76A, 76B, and 76C of the copper step mirror 75, that is, added together, and then rapidly condensed by the condenser lens 77. In the condensing part M, it becomes a dot shape.

  As shown in FIG. 10C, in the flat portion 77A of the condenser lens 77, the laser light L1 emitted from the watt-class one-chip semiconductor laser 72A is located in the upper portion A, and the watt-class one-chip semiconductor laser. The laser light L2 emitted from 72B is located in the central portion B, and the laser light L3 emitted from the watt-class one-chip semiconductor laser 72C is located in the lower portion C.

  In the slow direction, the laser beams L1, L2, and L3 emitted from the watt-class one-chip semiconductor lasers 72A, 72B, and 72C pass through the aspheric lenses 74A, 74B, and 74C, respectively, and each 45 degree mirror 76A. , 76B and 76C are reflected forward, that is, added, and then gradually condensed by the condenser lens 77 to form a line shape at the condenser M.

  Thereby, in the condensing part M formed at a position away from the condensing lens 77 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a line-shaped laser with high condensing degree, that is, improved power. Light can be obtained.

  As described above, according to the seventh embodiment, in the condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power can be obtained. Therefore, a flexible printed wiring board connector (FPC connector) ) And electronic devices or the like to be heated, multi-point simultaneous soldering can be performed in a short time (high speed), and thus the efficiency of soldering can be improved.

In the seventh embodiment, watt one-chip semiconductor laser 72A, 72B, 72C, the emission width of the slow direction 0.1 mm, although first-direction of the light emitting width was set to 1 [mu] m, the slow direction emission width Watt-class one-chip semiconductor lasers 72A, 72B and 72C having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the seventh embodiment, three heat sinks 73A, 73B, 73C including watt-class one-chip semiconductor lasers 72A, 72B, 72C are arranged in the front-rear direction X. However, three or more heat sinks 73-A, 73B, 73C are arranged in the front-rear direction X. May be. At this time, the copper step mirror 75 needs to include 45 degree mirrors corresponding to the number arranged in the front-rear direction X.
(Embodiment 8)
Next, the structure of the laser heating apparatus in Embodiment 8 of this invention shown in FIG. 11 is demonstrated . The configuration of the laser heating apparatus according to the eighth embodiment is substantially the same as that of the first embodiment, and thus detailed description thereof is omitted. Only different portions, that is, the lens configuration of the lens holding unit and the configuration of the laser light source are omitted. explain. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 11, the laser heating apparatus of the eighth embodiment has laser beams L1, L2, L3, L4 in the front-rear direction X on the upper surface of the heat conductive insulating sheet 3 provided on the lower surface of the holder body 2A. Heat sink provided with watt-class one-chip semiconductor lasers (an example of a watt-class one-chip semiconductor laser light source) 82A, 82B, 82C, and 82D that emit light centered on optical axis centers 81A, 81B, 81C, and 81D. 83A, 83B, 83C, 83D, and above the heat sinks 83A, 83B, 83C, 83D, the optical axis centers 81A, 81B, 81C, 81D are arranged around the watt class one-chip semiconductor lasers 82A, 82B, 82C, Collimate laser beams L1, L2, L3 and L4 in the first direction emitted from 82D F7 aspheric lenses 84A, 84B, 84C, 84D and copper step mirrors (an example of laser beam adding means) 85 provided above the aspheric lenses 84A, 84B, 84C, 84D (details will be described later) And an F25 achromatic lens (an example of a condensing lens) 86 that condenses the laser beams L1, L2, L3, and L4 reflected by the copper step mirror 85.

  The copper step mirror 85 includes a 45 degree mirror 85B that reflects, that is, adds, laser light L2 emitted from the watt-class one-chip semiconductor laser 82B forward, and a laser light L4 emitted from the watt-class one-chip semiconductor laser 82D. The first PBS prism 87 for reflecting the laser beam L1 emitted from the watt-class one-chip semiconductor laser 82A forward, that is, adding, and the watt-class one chip. Laser light L3 emitted from the semiconductor laser 82C is reflected between the second PBS prism 88 to be forwarded, that is, is added between the first PBS prism 87 and the 45 ° mirror 85B, and is reflected by the 45 ° mirror 85B. A half-wave plate 89 that rotates the polarization plane of L2, and the second PB Is provided between the prism 88 and 45 degree mirror 85D, 1/2 wave plate 90 for rotating is provided the polarization plane of the laser beam L4 reflected by the 45 ° mirror 85D.

  The watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D each have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm.

Hereinafter, the operation in the above-described eighth embodiment will be described with reference to FIG.
In the fast direction, the laser beams L1, L2, L3, and L4 emitted from the respective watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D are collimated by the aspheric lenses 84A, 84B, 84C, and 84D, respectively. The collimated L1 and L3 are reflected or added forward by the first PBS prism 87 and the second PBS prism 88, respectively, and the collimated L2 and L4 are reflected forward or added by the 45 degree mirrors 85B and 85D, respectively. Then, the plane of polarization is rotated by the half-wave plates 89 and 90 and passes through the first PBS prism 87 and the second PBS prism 88. Then, the laser beams L1, L2, L3, and L4 reflected or added by the first PBS prism 87, the second PBS prism 88, and the 45-degree mirrors 85B and 85D are rapidly condensed by the achromat lens 86, respectively. In M, it is point-like.

As shown in FIG. 11C, in the flat portion 86A of the achromat lens 86, the laser beams L1 and L2 emitted from the watt class one-chip semiconductor lasers 82A and 82B are located in the upper portion A, and the watt class one. The laser beams L3 and L4 emitted from the chip semiconductor lasers 82C and 82D are located in the lower part B.

In the slow direction, the laser beams L1, L2, L3, and L4 emitted from the watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D pass through the aspheric lenses 84A, 84B, 84C, and 84D, respectively. the 1PBS prism 87, the 2PBS prism 88 and 45 degree mirror 85B Te, reflected by 85D, i.e. summed, gradually condensed by achromat lens 86, a line shape in the condensing unit M.

  Thereby, in the condensing part M formed at a position away from the achromat lens 86 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a linear laser beam having a high condensing degree, that is, improved power. Can be obtained.

  As described above, according to the eighth embodiment, in the condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power can be obtained. Therefore, a flexible printed wiring board connector (an FPC connector) ) And electronic devices or the like to be heated, multi-point simultaneous soldering can be performed in a short time (high speed), and thus the efficiency of soldering can be improved.

  In the eighth embodiment, the laser beam L2 emitted from the watt-class one-chip semiconductor laser 82B and the watt-class one-chip semiconductor laser 82D are emitted by the 45-degree mirrors 85B and 85D formed on the copper step mirror 85. However, instead of the copper step mirror 85 provided with the 45 degree mirrors 85B and 85D, a prism mirror may be provided to reflect the laser lights L2 and L4.

  In the eighth embodiment, the watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. The width may be 0.05 mm to 0.5 mm, and the light emission width in the fast direction may be 0.5 μm to 5 μm.

In the eighth embodiment, four heat sinks 83A, 83B, 83C, and 84D including watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D are arranged in the front-rear direction X. Two or more may be arranged. At this time, the copper step mirror 85 needs to include a 45 degree mirror, a half-wave plate, and a PBS prism according to the heat sinks arranged in the front-rear direction X.
(Embodiment 9)
Next, the configuration of the laser heating apparatus according to the ninth embodiment of the present invention shown in FIG. 12. The configuration of the laser heating apparatus according to the ninth embodiment is substantially the same as that of the first embodiment, so detailed description thereof is omitted, and only different portions, that is, the lens configuration of the lens holding unit and the configuration of the laser light source are described. explain. The same members as those in the first embodiment are denoted by the same reference numerals.

As shown in FIG. 12, the laser heating device of the ninth embodiment is formed in two rows on the left and right sides with respect to the center line 3A on the upper surface of the heat conductive insulating sheet 3 provided on the lower surface of the holder body 2A. provided on the left side (one side) facing the record over the emission direction of the line 3A, watt single chip that emits laser light L1, L2, L3 the vertically upward facing the optical axis center 91A, 91B, the 91C in the center a semiconductor laser (watts one-chip semiconductor an example of a laser light source) 92A, 92B, the heat sink comprises a 92C 93A, 93B, and 93C, provided on the right side facing the record over the emission direction of the center line 3A (the other side) The watt-class one-chip semiconductor laser 92 that emits the laser beams L4, L5, and L6 around the optical axis centers 91D, 91E, and 91F that are directed vertically upward. , 92E, and 92F and heat sinks 93D, 93E, and 93F, and lasers in the first direction that are disposed above the heat sinks 93 with the optical axis centers 91 as the centers and emitted from the watt-class one-chip semiconductor lasers 92. F7 aspherical lenses 94A, 94B, 94C, 94D, 94E, and 94F for collimating the light L, and a copper step mirror (an example of laser beam adding means) 95 provided above each aspherical lens 94 (for details) And a condensing lens 97 of F15 for condensing each laser beam L reflected by the copper step mirror 95.

  The copper step mirror 95 includes a 45-degree mirror 96A that reflects, that is, adds, laser beams L1 and L4 emitted from the watt-class one-chip semiconductor lasers 92A and 92D forward, and watt-class one-chip semiconductor lasers 92B and 92E. 45 degree mirror 96B for reflecting or adding laser beams L2 and L5 emitted forward, and 45 degree for reflecting or adding laser lights L3 and L6 emitted from watt-class one-chip semiconductor lasers 92C and 92F forward. A mirror 96C is formed.

  The watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm, respectively.

Hereinafter, the operation in the ninth embodiment will be described with reference to FIG.
In the fast direction, laser beams L1, L2, L3, L4, L5, and L6 emitted from the respective watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F are respectively aspherical lenses 94A, 94B, Collimated with 94C, 94D, 94E, 94F. The collimated laser beams L1 and L4 are reflected by the 45-degree mirror 96A, the laser beams L2 and L5 are reflected by the 45-degree mirror 96B, and the laser beams L3 and L6 are reflected by the 45-degree mirror 96C. The light is condensed rapidly by the condensing lens 97 and becomes a point-like shape at the condensing part M.

  As shown in FIG. 12C, in the flat portion 97A of the condenser lens 97, the laser beam L1 emitted from the watt-class one-chip semiconductor laser 92A is located in the upper left portion A, and the watt-class one-chip semiconductor. The laser beam L2 emitted from the laser 92B is located in the left central portion B, and the laser beam L3 emitted from the watt-class one-chip semiconductor laser 92C is located in the lower left portion C and emitted from the watt-class one-chip semiconductor laser 92D. The laser beam L4 thus positioned is located in the upper right portion D, and the laser beam L5 emitted from the watt class one-chip semiconductor laser 92E is located in the right center portion E, and the laser beam emitted from the watt class one-chip semiconductor laser 92F. L6 is located in the lower right portion F.

  In the slow direction, the laser beams L1, L2, L3, L4, L5, and L6 emitted from the respective watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F are respectively aspherical lenses 94A, 94B, 94C, 94D, 94E, and 94F are transmitted. The laser beams L1 and L4 are forwarded by a 45-degree mirror 96A, the laser beams L2 and L5 are forwarded by a 45-degree mirror 96B, and the laser beams L3 and L6 are forwarded by a 45-degree mirror 96C. After being reflected, that is, added, the light is gradually condensed by the condensing lens 97 and becomes a line shape in the condensing part M.

  Thereby, in the condensing part M formed at a position away from the condensing lens 97 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a line-shaped laser with high condensing degree, that is, improved power. Light can be obtained.

  As described above, according to the ninth embodiment, in the condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power can be obtained. Therefore, a flexible printed wiring board connector (FPC connector) ) And electronic devices or the like to be heated, multi-point simultaneous soldering can be performed in a short time (high speed), and thus the efficiency of soldering can be improved.

In the ninth embodiment, the watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. Watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F having a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the ninth embodiment, three heat sinks 93A, 93B, 93C, 93D, 93E, and 93F including watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F are provided in the front-rear direction X, and left and right Although two are arranged in the direction Y, three or more in the front-rear direction X and two or more in the left-right direction Y may be arranged. At this time, the copper step mirror 95 needs to include 45 degree mirrors corresponding to the number arranged in the front-rear direction X.
(Embodiment 10)
(10-A)
Next, the structure of the laser heating apparatus in Embodiment 10 of this invention shown in FIG. 13 is demonstrated . The configuration of the laser heating apparatus in the tenth embodiment, a detailed description is omitted since it is substantially the same as the first embodiment, different portions, i.e. only lens arrangement and the laser light source configuration of the lens holding portion explain. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIGS. 13A and 13B, the laser heating apparatus according to the tenth embodiment has a plurality of emitting portions arranged in the left-right direction Y and emitting laser light L around the optical axis center. An LD array (an example of a watt-class one-chip semiconductor laser light source) 101 and a fast lens (cylindrical lens) that is arranged in front of the LD array 101 around the center line 101A of the LD array 101 and collimates the laser light L in the first direction. 102, a laser beam adder 103 that is arranged around the center line 101A in front of the fast lens 102 and adds the laser beam L collimated by the fast lens 102, and a center line 101A in front of the laser beam adder 103. Laser light arranged at the center and added by the laser light adder 103 It is configured of a condensing lens 104 for condensing the.

Note that the emission part of the LD array 101 has a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm, respectively.
The laser beam adder 103 is formed of a parallel plate prism, and a first reflection that reflects the laser beam L1 emitted from the right side (one side) in the emission direction of the laser beam L of the LD array 101 downward. The plate 111, the second reflector 112 that reflects the laser beam L1 reflected downward by the first reflector 111 in the forward direction, and the laser beam L1 that is reflected forward by the second reflector 112 in the middle direction The laser beam L of the LD array 101 is reflected together with the third reflector 113 that reflects (to the left) and the fourth reflector 114 that reflects the laser beam L1 reflected in the middle direction by the third reflector 113 in the forward direction. The fifth reflecting plate 115 that reflects the laser beam L2 emitted from the left side (the other side) in the emitting direction upward, and the laser beam L2 reflected upward by the fifth reflecting plate 115 is reflected forward. You The sixth reflecting plate 116, the seventh reflecting plate 117 that reflects the laser beam L2 reflected forward by the sixth reflecting plate 116 in the middle direction (rightward), and the seventh reflecting plate 117 are reflected in the middle direction. And an eighth reflector 118 that reflects the laser beam L2 forward. A cavity 119 is formed at the center of the laser adder 103, and the laser beam L3 emitted from the center of the LD array 101 is emitted in the forward direction as it is.

Hereinafter, the operation in the tenth embodiment will be described with reference to FIG.
For example, among the laser beams L emitted from the LD array 101, the laser beam L 1 emitted from the right side in the laser emission direction is incident on the laser beam adder 103 via the fast lens 102.

  Thereafter, as shown in FIG. 13, the laser light L <b> 1 is reflected downward by the first reflecting plate 111 and then reflected forward by the second reflecting plate 112. The laser beam L1 reflected in the forward direction is reflected in the middle direction by the third reflecting plate 113, and subsequently reflected in the forward direction by the fourth reflecting plate 114, and then condensed by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 2 emitted from the left side in the laser emission direction is incident on the laser beam adder 103 through the fast lens 102.

  Thereafter, as shown in FIG. 13, the laser light L <b> 2 is reflected upward by the fifth reflector 115 and then reflected forward by the sixth reflector 116. The laser beam L2 reflected in the forward direction is reflected in the middle direction by the seventh reflecting plate 117, and subsequently reflected in the forward direction by the eighth reflecting plate 118, and then condensed by the condenser lens 104.

As described above, since the plurality of laser beams L (L1, L2, L3) emitted from the LD array 101 are added by the laser beam adder 103 and further condensed in a line shape by the condenser lens 104. In the condensing part M formed at a position away from the condensing lens 104 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a linear shape with a high degree of condensing, that is, the power of the laser light L is increased. It becomes laser light L.
(10-B)
Next, as shown in FIG. 14, instead of the laser beam adder 103 shown in FIG. 13, one is arranged in the up-down direction Z on the left side (one side) of the center line 101A in the left-right direction Y. A first reflection mirror (an example of a first reflector) 121, a second reflection mirror (an example of a second reflector) 122, a first reflection mirror 121, and a second reflection mirror 122 that are inclined 45 degrees forward from X; A third reflecting mirror (adjacent to the front side) and disposed on the left side (one side) and the right side (the other side) of the center line 101A and inclined 45 degrees forward from the left-right direction Y (of the third reflector) one example) 123, and a fourth reflecting mirror (an example of a fourth reflector) 124, a laser pressurized with a laser beam adder 125 which is arranged around a center line 101A in front of the fast lens 102 Apparatus will be described.

Hereinafter, the operation of the laser heating apparatus including the laser beam adder 125 will be described with reference to FIG.
For example, among the laser beams L emitted from the LD array 101, the laser beam L1 emitted from the left side in the laser emission direction is incident on the laser beam adder 125 via the fast lens 102 (FIG. 14 ( c)).

Thereafter, the laser beam L1, as shown in FIG. 14 (a), (b) , (c), (d), is reflected upward by the first reflecting mirror 121, the followed by a second reflecting mirror 122 Reflected forward. The laser beam L1 reflected in the forward direction is reflected in the right direction by the third reflecting mirror 123, and subsequently reflected in the forward direction by the fourth reflecting mirror 124, and then condensed by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 2 emitted from the right side in the laser emission direction passes under the fourth reflection mirror 124 and is condensed by the condenser lens 104. Is done.

In this way, the plurality of laser beams L (L1, L2) emitted from the LD array 101 are added by the laser beam adder 125, and then lined by the condenser lens 104 as shown in FIG. In the light collecting part M formed at a position separated from the condenser lens 104 by 20 mm or more, that is, the light collecting part M having a WD of 20 mm or more, the degree of light collection is high, that is, the laser light L. The laser beam L is a line-shaped laser beam with increased power.
(10-C)
Next, as shown in FIG. 15, instead of the laser beam adders 103 and 125 shown in FIGS. 13 and 14, a first triangular mirror (first reflector) 131 disposed at the lowest position in the vertical direction Z and A second triangular mirror (second reflector) 132 disposed above the first triangular mirror 131, and a third triangular mirror (third reflector) 133 disposed above the second triangular mirror 132, A fourth triangular mirror (fourth reflector) 134 disposed above the third triangular mirror 133 , and a fifth triangular mirror (fifth reflector) 135 disposed in front of the second triangular mirror 132 ; A sixth triangular mirror (sixth reflector) 136 disposed in front of the third triangular mirror 133 , and a seventh triangular mirror (seventh reflector) 137 disposed in front of the fourth triangular mirror 134 ; , Right of the 7th triangular mirror 137 Eighth triangular mirrors provided adjacent to consist (Eighth reflector) 138, a laser heating apparatus provided with a laser beam adder 139 which is arranged around a center line 101A in front of the fast lens 102 Will be described .

Hereinafter, the operation of the laser heating apparatus including the above-described laser beam adder 139 will be described with reference to FIG.
For example, among the laser beams L emitted from the LD array 101, the laser beam L 1 is incident on the laser beam adder 139 through the fast lens 102. Thereafter, as shown in FIGS. 15A, 15 </ b> B, and 15 </ b> C, the light is reflected upward by the first triangular mirror 131 and then reflected forward by the second triangular mirror 132. The laser beam L1 reflected in the forward direction is reflected in the right direction by the fifth triangular mirror 135, then reflected in the forward direction by the eighth triangular mirror 138, and then condensed by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 2 is incident on the laser beam adder 139 through the fast lens 102. Thereafter, as shown in FIGS. 15A, 15 </ b> B, and 15 </ b> C, the light is reflected upward by the first triangular mirror 131 and then reflected forward by the third triangular mirror 133. The laser beam L2 reflected in the forward direction is reflected in the right direction by the sixth triangular mirror 136, then reflected in the forward direction by the eighth triangular mirror 138, and then collected by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 3 is incident on the laser beam adder 139 through the fast lens 102. Thereafter, as shown in FIGS. 15A, 15 </ b> B, and 15 </ b> C, the light is reflected upward by the first triangular mirror 131 and then reflected forward by the fourth triangular mirror 134. The laser beam L3 reflected in the forward direction is reflected in the right direction by the seventh triangular mirror 137, subsequently reflected in the forward direction by the eighth triangular mirror 138, and then condensed by the condenser lens 104.

As described above, since the plurality of laser beams L emitted from the LD array 101 are added by the laser beam adder 139 and further collected in a line shape by the condenser lens 104, 20 mm from the condenser lens 104 is obtained. In the condensing part M formed in the position farther away, that is, the condensing part M having a WD of 20 mm or more, the line-shaped laser light L with high condensing degree, that is, the power of the laser light L is increased.
(10-D)
Next, as shown in FIG. 16, in place of the LD array 101, the laser diode L is arranged in the left-right direction Y and the up-down direction Z, and has a plurality of emitting portions that emit laser light L around the optical axis center. comprising a stack LD (an example of a watt one-chip semiconductor laser light source) 141 obtained by stacking the array 101, also alternatively fast lens (cylindrical lens) 102, it is disposed around the center line 101A to the front of the stack LD141, the upper and lower portions 13 includes a fast lens (rod lens) 142 for collimating the laser beam L in the fast direction, which is cut horizontally and is laminated in the vertical direction Z by bringing the cut portions into contact with each other . Alternatively the laser beam adder 103,125,139 shown in-FIG. 15, fast lens 1 Are arranged around the center line 101A to the front of 2, a description will be given of a laser heating apparatus provided with a laser beam adder 143 for condensing the laser beam L is collimated by fast lens 142.

Note that the emission part of the stack LD 141 has a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 1 μm.
The laser beam adder 143 includes three plano-convex lenses 144A, 144B, and 144C disposed in front of the fast lens 142 and a plano-convex lens 144A that is provided on the right side among the three plano-convex lenses 144A, 144B, and 144C. and right wedge prism 145A which is disposed in front, three plano-convex lenses 144A, 144B, of 144C, is configured from the left wedge prism 145B disposed in front of the plano-convex lens 144 C provided on the left side ing.

Hereinafter, the operation of the laser heating apparatus including the laser beam adder 143 will be described with reference to FIG.
For example, among the laser beams L emitted from the stack LD 141, the laser beam L 1 emitted from the right side is incident on the laser beam adder 143 through the fast lens 142. Thereafter, as shown in FIG. 16, the incident angle of the laser light L1 is changed by the plano-convex lens 144A, is incident on the condenser lens 104 through the right wedge prism 145A, and is condensed by the condenser lens 104.

Of the laser beams L emitted from the stack LD 141, the laser beam L 2 emitted from the left side enters the laser beam adder 143 through the fast lens 142. Thereafter, as shown in FIG. 16, the incident angle of the laser light L2 is changed by the plano-convex lens 144C, is incident on the condenser lens 104 via the left wedge prism 145B, and is condensed by the condenser lens 104.

  As described above, since the plurality of laser beams L emitted from the stack LD 141 are added by the laser beam adder 143 and further condensed in a line shape by the condenser lens 104, the laser beams L from the condenser lens 104 are 20 mm or more. In the condensing part M formed in a distant position, that is, the condensing part M having a WD of 20 mm or more, the laser beam L is a line-shaped laser light L having a high degree of condensing, that is, a high power of the laser light L.

  As described above, according to the tenth embodiment, the laser beam adders 103, 125, 139, and 143 can obtain, in the light condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power. Therefore, multi-point simultaneous soldering can be easily performed in a short time (high speed) to a heated part such as a flexible printed wiring board connector (FPC connector) or an electronic device. Can be improved.

In the tenth embodiment, a plurality of LD arrays 101 provided in the left-right direction Y and having an emission part that emits laser light L are used. However, a one-chip LD that emits an expanded line beam may be used.
(Embodiment 11)
Next, the structure of the laser heating apparatus in Embodiment 11 of this invention is demonstrated based on FIG. The configuration of the laser heating apparatus according to the eleventh embodiment is substantially the same as that of the first embodiment, and thus detailed description thereof is omitted. Only different portions, that is, the lens configuration of the lens holding unit and the configuration of the laser light source are described. explain. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 17, the laser heating apparatus of the eleventh embodiment is 1 mm above the emitting portion 8 of a watt-class one-chip semiconductor laser (not shown) that emits laser light L1 around the optical axis center 7. An upper watt-class one-chip semiconductor laser (not shown) provided with an upper emission part 151 for emitting the laser beam L2, and an inner holder disposed at the tip of the holder 2 around the optical axis center 7. A lens holding part 152 having 152A and an outer holding body 152B, an F4 aspherical lens 153 arranged around the optical axis center 7 and held by the inner holding body 152A of the lens holding part 152, and a lens holding Larger than the diameter of the first cavity 155A and the outer holding body 152B, which are attached to the outer holding body 152B of the portion 152 and formed to have a diameter smaller than the diameter of the outer holding body 152B. A second cavity 155B which is formed in the radial, and a like 155 (an example of the reflector holding portion) mirror holding unit that performs reflection adjustment of the laser beam.

The mirror holding portion 155 is formed in a radial direction from a portion rearward of the first cavity portion 155A , and has three (a plurality) of first insertion set screws 156 for fixing to the lens holding portion 152. Two (a plurality) in the front-rear direction through which a set screw 158 for tilt adjustment is formed in the radial direction from the one insertion hole 157 and the second cavity portion 155B and for tilt adjustment of a mirror mounting table 164 (described later). a second insertion hole 159 which is formed, between the second insertion hole 159, are formed radially from the second cavity 155 B, the second fixing set screws 160 for fixing the mirror mount 164 A third insertion hole 161 to be inserted, and a fourth insertion hole 162 that is disposed in the second cavity portion 155B and into which the second fixing set screw 160 inserted from the third insertion hole 161 is inserted, are formed. And a mirror mount (an example of a reflector mounting table) 164 for supporting (an example of a reflector) 16 3 mirrors for reflecting the laser beam L2 emitted from the upper exit portion 151.

The mirror 163 has one end mounted on the mirror mounting table 164 and the other end mounted on the first cavity 155A, and is arranged so that the laser beam L2 is collected by the light collecting unit M. ing.

The emission part 8 and the upper emission part 151 have a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm.
Further, when the aspherical lens 153 is held in the lens holding part 152, the aspherical lens 153 is placed so that the aspherical part of the aspherical lens 153 faces forward, that is, the aspherical part faces the emitting direction of the laser light L. .

Hereinafter, the operation of the laser heating apparatus according to the eleventh embodiment will be described with reference to FIG.
First, the mirror mounting table 164 is moved up and down by moving the respective tilt adjustment set screws 158 so that the mirror mounting table 164 is tilted appropriately so as to have an angle at which the laser beam L2 can be reflected by the condensing unit M. After the adjustment and adjustment to the desired tilt position, the mirror mounting table 164 is fixed to the mirror holding portion 155 by the second fixing set screw 160.

The laser light L1 emitted from the emission unit 8 of the watt-class one-chip semiconductor laser is condensed by the aspherical lens 153.
The laser beam L2 emitted from the upper emission unit 151 of the upper watt class one-chip semiconductor laser is condensed by the aspherical lens 153, reflected by the mirror 163 placed on the mirror placement table 164, and collected. The light is collected by the optical part M.

  As described above, the laser beam L1 emitted from the emitting unit 8 is collected by the condensing unit M, and after the laser beam L2 emitted from the upper emitting unit 151 is reflected by the mirror 163, the collecting unit Since the light is condensed by M, in the condensing part M formed at a position away from the aspherical lens 153 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a linear laser beam with a high degree of condensing, That is, the laser light L is a high power line.

  As described above, according to the eleventh embodiment, since the mirror holding unit 155 having the mirror 163 can obtain a line-shaped laser beam with high condensing degree, that is, increased power, in the condensing unit M. Multi-point simultaneous soldering can be performed in a short time (high speed) on a heated part such as a flexible printed wiring board connector (FPC connector) or an electronic device, thus improving the soldering efficiency. it can.

In the eleventh embodiment, the emission unit 8 and the upper emission unit 151 have a light emission width in the slow direction of 0.5 mm and a light emission width in the first direction of 1 μm. A watt-class one-chip semiconductor laser having a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

Further, in Embodiment 11, aspheric lens 153 is F value indicating the brightness of the lens has been the F4, F value may be in the range of F4～F9, also numerical aperture NA 0. It may be 3 or more.

It is a laser heating apparatus in Embodiment 1 of this invention, (a) is a top view, (b) is a side view. It is a lens holding | maintenance part of the laser heating apparatus, (a) is a top view, (b) is a side view. It is a figure which shows lens arrangement | positioning of the laser heating apparatus in Embodiment 2 of this invention, (a) is a top view, (b) is a side view. It is a figure which shows lens arrangement | positioning of the laser heating apparatus in Embodiment 3 of this invention, (a) is a top view, (b) is a side view. It is a side view at the time of processing with respect to a workpiece using the laser heating device. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 4 of this invention, (a) is a top view, (b) is a side view. It is a side view at the time of processing with respect to a workpiece using the laser heating device. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 5 of this invention, (a) is a top view, (b) is a side view, (c) is arrangement | positioning of other Embodiment 5. FIG. 6D is a side view showing the arrangement of another embodiment 5; It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 6 of this invention, (a) is a top view, (b) is a side view, (c) is arrangement | positioning of other Embodiment 6. FIG. 6D is a side view showing the arrangement of another embodiment 6; It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 7 of this invention, (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens and laser light source of the laser heating apparatus in Embodiment 8 of this invention, (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens and laser light source of the laser heating apparatus in Embodiment 9 of this invention, (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 10 (10-A) of this invention, (a) is a top view, (b) is a side view, (c) is AA. It is sectional drawing. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and a laser light source in the same (10-B), (a) is a top view, (b) is a side view, (c) is AA sectional drawing, (d). Is a BB cross-sectional view, and (e) is a CC cross-sectional view. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and a laser light source in the same (10-C), (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and a laser light source in the same (10-D), (a) is a top view, (b) is a side view. It is a figure which shows lens arrangement | positioning of the laser heating apparatus in Embodiment 11 of this invention, (a) is a side view, (b) is AA sectional drawing.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Laser heating apparatus 7 Optical axis center 8 Light emission part 9 Watt class one chip semiconductor laser (Watt class one chip semiconductor laser
light source)
DESCRIPTION OF SYMBOLS 10 Aspherical lens 21 1st aspherical lens 22 2nd aspherical lens 31 Aspherical lens 32 Cylindrical lens 41 First watt class one chip semiconductor laser (first watt class one chip semiconductor
Body laser light source)
41B First optical axis center 42 Second watt class one-chip semiconductor laser (second watt class one-chip semiconductor)
Body laser light source)
42B Second optical axis center 43 First aspheric lens 44 Second aspheric lens 45 PBS prism (prism)
46 Condensing Lens 51 First Watt Class One-Chip Semiconductor Laser (First Watt Class One-Chip Semiconductor
Body laser light source)
51B First optical axis center 52 Second watt class one-chip semiconductor laser (second watt class one-chip semiconductor)
Body laser light source)
52B Second optical axis center 53 PBS prism (prism)
54 Round Convex Aspherical Lens (Aspherical Lens)
56 1st cylindrical lens 57 2nd cylindrical lens 61 fast lens 62 1st cylindrical lens 64 2nd cylindrical lens 71A-71C Optical axis center 72A-72C Watt class one-chip semiconductor laser (Watt class one-chip semiconductor laser)
light source)
74A-74C Aspherical lens 75 Copper step mirror (laser beam adding means)
77 Condensing lenses 81A to 81D Optical axis centers 82A to 82D Watt-class one-chip semiconductor laser (Watt-class one-chip semiconductor laser
light source)
84A to 84D Aspherical lens 85 Copper step mirror (laser beam adding means)
86 Achromatic lens (condensing lens)
91A to 91F Optical axis centers 92A to 92F Watt class one-chip semiconductor laser (Watt class one-chip semiconductor laser
light source)
94A-94F Aspherical lens 95 Copper step mirror (laser beam adding means)
97 Condensing lens 101 LD array (Watt class one-chip semiconductor laser light source)
101A Center line 102 Fast lens 103 Laser light adder 104 Condensing lens 125 Laser light adder 139 Laser light adder 141 Stack LD (Watt class one-chip semiconductor laser light source)
142 fast lens 143 laser beam adder 151 emitting unit 152 lens holding unit 153 aspherical lens 155 mirror holding unit (reflector holding unit)
158 Set screw 163 for tilt adjustment Mirror (reflector)
164 mirror mounting table (reflector mounting table)

Claims (1)

A laser heating device that emits laser light that dissolves a substance,
A first one-chip semiconductor laser light source having a light emitting portion that emits laser light around the first optical axis center, the light emitting width in the slow direction being longer than the light emitting width in the first direction;
A laser having a light emission width in the slow direction that is longer than a light emission width in the first direction, with the slow direction tilting from the first optical axis center about a second optical axis center orthogonal to the first optical axis center A second one-chip semiconductor laser light source having an emission part for emitting light ;
In front of the first one-chip semiconductor laser light source and the second one-chip semiconductor laser light source, wherein arranged a first intersection of the optical axis center and the second optical axis center as the center, the first one-chip semiconductor laser A prism for adding the laser light emitted from the light source and the laser light emitted from the second one-chip semiconductor laser light source ;
And aspheric lenses placed centered on the said first optical axis center in front of the prism,
Two cylindrical lenses disposed around the first optical axis center between the aspheric lens and the substance ,
The first one-chip semiconductor laser light source, the second one-chip semiconductor laser light source, the prism and the aspheric lens are formed by the aspheric lens, and the first one-chip semiconductor laser light source and the second one-chip semiconductor laser light source. Are arranged so that the laser beam from each is condensed in the first direction,
The aspheric lens is arranged such that a distance from the emitting portion of the first one-chip semiconductor laser light source to the aspheric lens matches a predetermined F value of the aspheric lens,
The first one-chip semiconductor laser light source and the second one-chip semiconductor laser light source laser beam emitted from the said prism, is irradiated to the non-spherical lens and the via two cylindrical lenses the material on Rukoto Thus, a cross-shaped spot is formed on the substance, and the positions of the two cylindrical lenses are adjusted on the first optical axis center so that the shape of the cross-shaped spot becomes a desired shape. A laser heating apparatus characterized by the above.

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